CN113437202A - Light emitting device, integrated light emitting device, and light emitting module - Google Patents

Light emitting device, integrated light emitting device, and light emitting module Download PDF

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Publication number
CN113437202A
CN113437202A CN202110686880.2A CN202110686880A CN113437202A CN 113437202 A CN113437202 A CN 113437202A CN 202110686880 A CN202110686880 A CN 202110686880A CN 113437202 A CN113437202 A CN 113437202A
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light
emitting device
light emitting
emitting element
wavelength
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山田元量
山田有一
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)
  • Led Devices (AREA)

Abstract

The invention provides a light emitting device capable of performing wide light distribution without using a secondary lens. The light emitting device of the present invention includes: a base body (101) having a conductor wiring (102); a light-emitting element (105) which is mounted on the base (101) and has a light-reflecting film (106) on the upper surface; and a sealing member (108) that covers the light-emitting element (105), wherein the ratio (H/W) of the height (H) to the width (W) of the sealing member (108) is less than 0.5.

Description

Light emitting device, integrated light emitting device, and light emitting module
The present application is a divisional application of an invention patent application having an application date of 2016, 08/10, and an application number of 201611144127.6, entitled "light-emitting device, integrated light-emitting device, and light-emitting module".
Technical Field
The invention relates to a light emitting device, an integrated light emitting device and a light emitting module.
Background
In recent years, various electronic parts have been proposed and put into practical use, and the performance required for them has been improved. In particular, electronic components are required to maintain long-term performance even under severe use environments. Such a demand is no exception to a Light Emitting device using a semiconductor Light Emitting element such as a Light Emitting Diode (LED). That is, in the field of general lighting or in-vehicle lighting, the performance required of the light-emitting device is increasing, and higher output (high luminance) and higher reliability are required. Further, the light emitting device is also required to be supplied at a low price while maintaining these high performances.
In a backlight used for a liquid crystal television, a general lighting device, or the like, design and manufacture are important and a demand for reduction in thickness is high.
For example, patent document 1 discloses a light-emitting device in which a reflector is provided on the upper surface of a light-emitting element flip-chip mounted on a sub-mount, thereby achieving a reduction in the thickness of a backlight.
Patent document 1: japanese laid-open patent publication No. 2008-4948
According to the light emitting device of patent document 1, although a light emitting device with a wide light distribution can be realized, a light emitting device with a wider light distribution is desired as the backlight becomes thinner.
Disclosure of Invention
The present invention has been made in view of the above circumstances, and provides a light emitting device capable of performing a wide light distribution without using a secondary lens.
The light emitting device of the present invention includes: a base body having a conductor wiring; a light emitting element mounted on the base body and emitting a first light; a light reflection film provided on an upper surface of the light emitting element; and a sealing member that covers the light emitting element and the light reflecting film, wherein a ratio (H/W) of a height (H) to a width (W) of the sealing member is less than 0.5.
According to the embodiment of the present invention, a wide light distribution can be performed without using a secondary lens.
Drawings
Fig. 1 is a sectional view showing an example of a light emitting device according to the present embodiment;
fig. 2 is a graph showing the angle-dependent characteristic of the light transmittance of the light reflection film of the present embodiment;
fig. 3 is a diagram showing a relationship between a wavelength bandwidth of a light reflection film of the light emitting device of the present embodiment and an emission wavelength of a light emitting element;
fig. 4 is a light distribution characteristic diagram of the light emitting device of the present embodiment;
fig. 5 is a light distribution characteristic diagram of a light emitting device of a comparative example using a secondary lens;
fig. 6A is a diagram showing the light distribution characteristics of light emitting device No.1 of the present embodiment;
fig. 6B is a diagram showing the light distribution characteristics of light emitting device No.2 of the present embodiment;
fig. 6C is a diagram showing the light distribution characteristics of light emitting device No.3 of the present embodiment;
fig. 6D is a diagram showing the light distribution characteristics of light emitting device No.4 of the present embodiment;
fig. 6E is a diagram showing the light distribution characteristics of light emitting device No.5 of the present embodiment;
fig. 6F is a diagram showing the light distribution characteristics of light emitting device No.6 of the present embodiment;
fig. 6G is a diagram showing the light distribution characteristics of light emitting device No.7 of the present embodiment;
fig. 6H is a diagram showing the light distribution characteristics of light emitting device No.8 of the present embodiment;
fig. 6I is a diagram showing the light distribution characteristics of light emitting device No.9 of the present embodiment;
fig. 7 is a sectional view showing an example of a light emitting module according to the present embodiment;
FIG. 8 is a view showing an example of a light reflecting plate;
fig. 9A is a diagram showing the luminance distribution characteristics of a light emitting module in which a light reflecting member is not arranged;
fig. 9B is a graph showing the luminance distribution characteristics of the light emitting module of example 2 in which the light reflecting member is arranged.
Description of the labeling:
100. 200: light emitting device
300: light emitting module
101: base body
102: conductor wiring
103: connecting part
104: insulating member
105: light emitting element
106: light reflective film
108: sealing member
110: light reflection member
110': light reflection plate
111: light diffusion sheet
112: wavelength conversion layer
113: through hole
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. The light-emitting device described below is for embodying the technical idea, and the present invention is not limited to the following embodiments unless otherwise specified. Note that the contents described in one embodiment and example can be applied to other embodiments and examples.
In the following description, the same names and symbols denote the same or similar components, and detailed description thereof will be omitted as appropriate. In addition, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same component and a plurality of elements are shared by one component, or conversely, a function of one component may be realized by sharing a plurality of components.
(first embodiment)
Fig. 1 is a schematic structural view showing an example of a light emitting device according to a first embodiment.
As shown in fig. 1, the present embodiment includes: a base body 101 having a conductor wiring 102; a light-emitting element 105 mounted on the base 101. The light emitting element 105 is flip-chip mounted via the connection member 103 so as to straddle at least the pair of conductor wirings 102 provided on the surface of the base 101. A light reflection film 106 is formed on the light extraction surface side of the light emitting element 105 (the upper surface of the light emitting element 105). An insulating member 104 may be provided in at least a part of the conductor wiring, and a region electrically connected to the light-emitting element 105 in the upper surface of the conductor wiring 102 is exposed from the insulating member 104.
The light transmittance of the light reflecting film 106 depends on the incident angle of light incident from the light emitting element 105. Fig. 2 shows the incident angle dependence of the light transmittance of the light reflection film 106 according to the present embodiment. The light reflection film 106 hardly passes light in a direction perpendicular to the upper surface of the light emitting element 105, but the amount of light transmitted increases as the angle deviates from the perpendicular direction. Specifically, the transmittance is about 10% in the range of the incident angle from-30 ° to 30 °, and the transmittance gradually increases as the incident angle decreases from-30 °, and the transmittance sharply increases as the incident angle decreases from-50 °, and similarly, the transmittance gradually increases as the incident angle increases from 30 °, and the transmittance sharply increases as the incident angle increases from 50 °. That is, the light transmittance of the light emitting film with respect to the first light increases as the absolute value of the incident angle increases. By forming such a film, a batwing light distribution characteristic as shown in fig. 4 can be realized.
Here, the batwing light distribution characteristic is a light distribution characteristic in which a first region having a light distribution angle of 90 ° or less has a first peak having a larger intensity than that when the light distribution angle is 90 °, and a second region having a light distribution angle of 90 ° or more has a second peak having a larger intensity than that when the light distribution angle is 90 °.
The light-emitting element 105 is covered with a translucent sealing member 108. The sealing member 108 is disposed so as to substantially cover the light emitting element 105, since it protects the light emitting element 105 from the external environment and optically controls the light output from the optical element. The sealing member 108 is formed in a substantially dome shape, and covers a junction between the light emitting element 105 and the conductor wiring 102, including the light emitting element 105 with the light reflecting film 106, the surface of the conductor wiring 102 around the light emitting element 105, and the connection member 103. That is, the upper surface and the side surface of the reflective film 106 are in contact with the sealing member 108, and the side surface of the light emitting element 105 not covered with the reflective film 106 is also in contact with the sealing member 108. In addition, the joint portion may be covered with an underfill independently of the sealing member 108. In this case, the sealing member 108 is formed so as to cover the upper surface of the underfill and the light emitting element. In this embodiment, the light-emitting element 105 is directly covered with the sealing member 108.
The sealing member 108 is preferably formed so that its outer shape is circular or elliptical in a plan view, and the height (H) of the sealing member in the optical axis direction is preferably formed at a ratio of less than 0.5 of the diameter (width: W) of the sealing member in a plan view. In the case of an oval shape, the dimension of the width has a major axis and a minor axis, but in the present specification, the minor axis is defined as the seal diameter (W). The surface of the seal member 108 is formed of a convex curved surface.
With such a configuration, light emitted from the light-emitting element 105 can be refracted at the interface between the sealing member 108 and the air, and the light distribution can be further widened.
Here, the height (H) of the sealing member is a height from the actual mounting surface of the light emitting element 105, as shown in fig. 1. In addition, the width (W) of the sealing member refers to the diameter as described above when the bottom surface of the sealing member is circular, and refers to the size of the portion having the shortest length when the bottom surface of the sealing member is other shapes.
Fig. 4 shows an example of a change in light distribution characteristics caused by the presence or absence of the sealing member 108. In fig. 4, the light distribution characteristics of light emitting device 100 according to embodiment 1 are shown by solid lines. The broken line indicates the light distribution characteristics of the light emitting device manufactured in the same manner as in embodiment 1, except that the sealing member 108 is not formed. As shown in fig. 4, in the light emitting device of the first embodiment, the first peak value moves in the direction in which the light distribution angle becomes smaller, and the second peak value moves in the direction in which the light distribution angle becomes larger, as compared with a light emitting device in which the sealing member 108 is not formed, thereby widening the light distribution.
In this way, by using both the light reflection film 106 and the sealing member 108, desired light distribution characteristics can be obtained without using a secondary lens. That is, the light reflection film 106 is formed to reduce the luminance directly above the light emitting element 105, and the sealing member 108 can be specified to distribute the light from the light emitting element 105 in a wide range, so that the sealing member having a lens function can be significantly downsized. In other words, conventionally, it has been necessary to reduce the luminance directly above the light emitting element and to widen the light distribution only by the sealing member, and therefore it has been necessary to increase the height of the sealing member. On the other hand, in the light-emitting device of the present embodiment, since the batwing light distribution characteristics are realized by providing the light reflection film 106 for reducing the luminance directly above the light-emitting element 105, and the function of the sealing member 108 is specified to be more widely distributed, the size can be reduced. As a result, a thin backlight module (light emitting module) with improved luminance unevenness can be realized as will be described later. Fig. 5 shows a light distribution characteristic when a secondary lens is used as a comparative example. According to the light emitting device of the present embodiment, even if the secondary lens is not used, the same light distribution characteristics as those in the case of using the secondary lens can be obtained.
Here, fig. 6 shows the results of checking the light distribution characteristics, in which 9 light emitting devices were produced by changing the height (H) of the sealing member 108 in the optical axis direction and the diameter (width: W) of the sealing member in plan view. In addition, a blue LED having a thickness of 150 μm and a square shape with 1 side of 600 μm in a plan view was used as the light emitting element. The light reflecting film 106 is formed of SiO2Layer (82nm) and ZrO2The layer (54nm) was repeated to form 11 layers.
Table 1 shows the ratio of the height (H) of the sealing member to the diameter (width: W) of the sealing member in 9 light-emitting device Nos. 1 to 9. Fig. 6 to 6I show light distribution characteristics of light emitting devices nos. 1 to 9.
TABLE 1
No.1 No.2 No.3 No.4 No.5 No.6 No.7 No.8 No.9
H(mm) 0.70 0.89 0.92 0.79 0.93 1.09 0.74 1.00 1.18
W(mm) 2.76 2.78 2.56 3.06 3.14 3.11 3.40 3.28 3.29
H/W 0.25 0.32 0.36 0.26 0.30 0.35 0.22 0.30 0.36
Light distribution characteristic FIG. 6A FIG. 6B FIG. 6C FIG. 6D FIG. 6E FIG. 6F FIG. 6G FIG. 6H FIG. 6I
From the above experimental results, it is considered that the difference in light distribution characteristics due to the difference in diameter of the sealing member is small, and the ratio of the height (H) of the sealing member to the diameter (width: W) of the sealing member affects the light distribution characteristics.
As is clear from the graph of fig. 6, in order to form a wider light distribution, it is preferable that the ratio (H/W) of the height (H) of the sealing member to the width (W) of the sealing member is 0.3 or less.
Hereinafter, a preferred embodiment of the light emitting component 100 of the present embodiment will be described.
(base 101)
The base 101 is a member for mounting the light emitting element 105. The base body 101 has a conductor wiring 102 on its surface for supplying power to the light emitting element 105.
Examples of the material of the substrate 101 include ceramics, phenol resin, epoxy resin, polyimide resin, BT resin, polyphthalamide (PPA), polyethylene terephthalate (PET), and the like. Among them, from the viewpoint of low cost and easiness of molding, a resin is preferably selected as a material. The thickness of the substrate may be appropriately selected, and may be any of a flexible substrate and a rigid substrate which can be manufactured by a roll-to-roll (roll) method. The rigid substrate may be a thin rigid substrate that can be bent.
In order to form a light-emitting device having excellent heat resistance and light resistance, ceramic is preferably selected as a material of the base 101. Examples of the ceramic include alumina, mullite, forsterite, glass ceramics, nitrides (e.g., AlN), and carbides (e.g., SiC). Among them, ceramics made of alumina or ceramics mainly made of alumina are preferable.
In addition, when the material constituting the substrate 101 is a resin, glass fiber and SiO may be mixed in the resin2、TiO2、Al2O3And inorganic fillers to improve mechanical strength, reduce thermal expansion coefficient, improve light reflectance, and the like. As the base 101, a so-called metal substrate in which an insulating layer is formed on a metal member may be used as long as the pair of conductor wirings 102 can be insulated and separated.
(conductor wiring 102)
The conductor wiring 102 is electrically connected to an electrode of the light-emitting element 105 and is used for supplying an external current (power). That is, the electrode is a member that functions as an electrode or a part thereof for supplying electricity from the outside. Typically, at least two of the positive and negative electrodes are formed separately.
The conductor wiring 102 is formed on at least the upper surface of the base body which is a mounting surface of the light emitting element 105. The material of the conductor wiring 102 may be appropriately selected depending on the material used for the base 101, the manufacturing method, and the like. For example, when ceramic is used as the material of the substrate 101, the material of the conductive wiring 102 is preferably a material having a high melting point that can withstand the sintering temperature of the ceramic sheet, and a high melting point metal such as tungsten or molybdenum is preferably used. Further, other metal materials such as nickel, gold, and silver may be coated thereon by gold plating, sputtering, vapor deposition, or the like.
When an epoxy glass resin is used as the material of the substrate 101, the material of the conductor wiring 102 is preferably a material that is easy to process. When an injection-molded epoxy resin is used, the material of the conductor wiring 102 is preferably a member that is easily processed by punching, etching, bending, or the like and has high mechanical strength. Specific examples thereof include metals such as copper, aluminum, gold, silver, tungsten, iron, and nickel; or a metal layer of iron-nickel alloy, phosphor bronze, iron-containing copper, molybdenum, or the like, or a lead frame, or the like. In addition, the surface of the lead frame may be covered with a metal material other than the lead frame. The material is not particularly limited, and for example, only silver; or an alloy of silver and copper, gold, aluminum, rhodium, or the like; or a multilayer film using the above material, silver, or each alloy. In addition, a method of covering the metal material may be a sputtering method, a vapor deposition method, or the like, in addition to the gold plating method.
(connecting part 103)
The connection member 103 is a member for fixing the light emitting element 105 to the base 101 or the conductor wiring 102. In the case of flip-chip mounting as in the present embodiment, a conductive member is used. Specifically, an Au-containing alloy, an Ag-containing alloy, a Pd-containing alloy, an In-containing alloy, a Pb-Pd-containing alloy, an Au-Ga-containing alloy, an Au-Sn-containing alloy, an Sn-Cu-Ag-containing alloy, an Au-Ge-containing alloy, an Au-Si-containing alloy, an Al-containing alloy, a Cu-In-containing alloy, a mixture of a metal and a flux, and the like can be cited.
As the connecting member 103, a liquid, paste, or solid (sheet, block, powder, or line) member can be used, and can be appropriately selected according to the composition, the shape of the base, and the like. These connecting members 103 may be formed of a single member, or a plurality of members may be used in combination.
(insulating Member 104)
The conductor wiring 102 is preferably covered with an insulating member 104 except for a portion electrically connected to the light-emitting element 105 and other materials. That is, as shown in the drawings, basically, a resist for insulating and covering the conductor wiring 102 may be arranged, and the insulating member 104 may function as a resist.
When the insulating member 104 is disposed, not only the insulation of the conductor wiring 102 is performed, but also the light leakage and absorption are prevented by containing a white filler, and the light extraction efficiency of the light-emitting device 100 is improved.
The material of the insulating member 104 is not particularly limited as long as it has insulating properties, and is a material that absorbs little light from the light-emitting element. For example, epoxy resin, silicone, modified silicone, urethane resin, oxetane resin, acrylic, polycarbonate, polyimide, or the like can be used.
(light-emitting element 105)
A known element can be used as the light-emitting element 105 mounted on the base. In this embodiment, a light-emitting diode is preferably used as the light-emitting element 105.
The light-emitting element 105 can select an element of an arbitrary wavelength. For example, as the blue and green light emitting elements, those using ZnSe or nitride-based semiconductors (In) can be usedxAlyGa1-x-yN, 0 is not less than X, 0 is not less than Y, X + Y is not less than 1), GaP. As the growth substrate, a light-transmitting sapphire substrate or the like can be used. As the red light-emitting element, GaAlAs, AlInGaP, or the like can be used. In addition, a semiconductor light-emitting element made of a material other than the above-described materials can be used. The composition, emission color, size, number, and the like of the light-emitting element to be used can be appropriately selected according to the purpose.
Various emission wavelengths can be selected according to the material of the semiconductor layer and the mixed crystallinity thereof. The light-emitting element may have positive and negative electrodes on the same surface side or may have positive and negative electrodes on different surfaces so that the light-emitting element can be flip-chip mounted.
The light-emitting element 105 of this embodiment includes a light-transmitting substrate and a semiconductor layer stacked on the substrate. An n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially formed on the semiconductor layer, an n-type electrode is formed on the n-type semiconductor layer, and a p-type electrode is formed on the p-type semiconductor layer.
As shown in fig. 1, the light-emitting element 105 is flip-chip mounted on the conductive wiring 102 on the surface of the base 101 via the connection member 103, and the surface facing the electrode formation surface, i.e., the main surface of the translucent substrate constitutes a light extraction surface. However, in the present embodiment, since the light reflection film 106 is formed on the light extraction surface, the side surface of the light emitting element 105 constitutes a substantial light extraction surface. That is, a part of the light emitted from the light-emitting element 105 and directed toward the main surface of the light-emitting element 105 is returned into the light-emitting element 105 by the light-reflecting film 106, repeatedly reflected inside the light-emitting element 105, and emitted from the side surface side of the light-emitting element 105. Therefore, the light distribution characteristic of the light emitting device 100 (see the broken line in fig. 4) is a combination of light transmitted through the light reflection film 106 and light emitted from the side surface of the light emitting element 105.
The light emitting element 105 is disposed so as to straddle the two conductor wirings 102 separated by the positive and negative insulation, and is electrically connected and mechanically fixed by a conductive connecting member 103. The light-emitting element 105 can be mounted by using, for example, solder bumps (bump: バンブ) in addition to solder paste. As the light emitting element 105, a small package in which the light emitting element is sealed with resin or the like may be used, and particularly, the shape and structure are not limited.
As will be described later, In the case of forming a light-emitting device having a wavelength conversion member, a nitride semiconductor (In) capable of emitting light with a short wavelength that can efficiently excite the wavelength conversion member 109 is preferablexAlyGa1-x-yN、0≤X、0≤Y、X+Y≤1)。
Further, although the description has been given by way of example of flip-chip mounting, a mounting method may be employed in which the insulating substrate side of the light emitting element is used as a mounting surface, and the electrodes formed on the upper surface of the light emitting element are connected to wires. In this case, the upper surface of the light-emitting element is the electrode formation surface side, and the reflective film is provided on the electrode formation surface side.
(light reflecting film 106)
The light reflection film 106 is formed on the light extraction surface side which is the main surface of the light emitting element 105.
The material of the light reflecting film may be a metal or a resin containing a white filler, and is not particularly limited as long as it is a material that reflects at least light (first light) emitted from the light emitting element 105.
Further, by using the dielectric multilayer film, a reflective film with small absorption can be obtained. In addition, the reflectance can be arbitrarily adjusted by the design of the film, and in addition, the reflectance can be controlled according to the angle. In particular, the shape of the batwing light distribution can be controlled by increasing the reflectance in the direction perpendicular to the light extraction surface (also referred to as "optical axis direction") and decreasing the reflectance, that is, increasing the transmittance, at a larger angle with respect to the optical axis.
In particular, in terms of a reflection wavelength bandwidth (wavelength band) on the optical axis of the dielectric multilayer film, that is, in a direction perpendicular to the upper surface of the light emitting element, as shown in fig. 3, a method of expanding the reflection wavelength bandwidth on the long wavelength side with respect to the emission peak of the light emitting element 105 is useful.
This is because, when the angle is shifted from the optical axis, in other words, as the angle of incident light from the optical axis increases, the reflection wavelength band width of the dielectric multilayer film shifts to the short wavelength side, and the reflection wavelength band width on the long wavelength side is widened with respect to the emission wavelength, and the reflectance can be maintained even for light incident at a large angle with respect to the optical axis.
As a material of the dielectric multilayer film, a metal oxide film material, a metal nitride film, an oxynitride film, or the like can be used. In addition, organic materials such as silicone resin and fluororesin may be used, and the materials are not particularly limited.
(sealing member 108)
As a material of the sealing member 108, a translucent material such as epoxy resin, silicone resin, a resin obtained by mixing these, or glass can be used. Among them, in view of light resistance and ease of molding, a silicone resin is preferably selected.
The sealing member 108 may contain a colorant in accordance with the emission color of a light emitting element or a wavelength conversion member such as a phosphor or quantum dots that partially absorbs light from the light emitting element 105 and emits light having a wavelength different from the emission wavelength of the light emitting element, in addition to the light diffusion material.
When these members are included in the sealing member 108, a member that does not affect the light distribution characteristics is preferably used in order to form the light distribution characteristics. For example, if the particle diameter of the included member is 0.2 μm or less, the influence on the light distribution characteristics is small, which is preferable. In the present specification, the particle size refers to an average particle size, and the value of the average particle size is a value obtained by f.s.s.s.no (Fisher-SubSieve-Sizers-No.) by the air permeation method.
The sealing member 108 can be formed by compression molding or injection molding so as to cover the light emitting element 105. Further, the viscosity of the material of the sealing member 108 may be optimized, and the material may be dropped on or drawn on the light-emitting element 105, and the shape may be controlled by the surface tension of the material itself.
In the case of the latter forming method, a mold is not necessary, and the sealing member can be formed by a simpler method. In addition, as a method of adjusting the viscosity of the material of the sealing member formed by such a forming method, the viscosity can be adjusted to a desired viscosity by using the light diffusing material, the wavelength converting member, and the colorant as described above, in addition to the viscosity of the material itself.
(second embodiment)
Fig. 7 is a sectional view of a light emitting module 300 including the light emitting device 200 of the second embodiment. In the present embodiment, a plurality of light emitting elements 105 are mounted on the base 101 at predetermined intervals, and a light reflecting member 110 that reflects light emitted at a small angle with respect to the upper surface of the light emitting elements (the upper surface of the base 101) is disposed between the light emitting elements 105. That is, the light emitting device 200 is an integrated light emitting device including a plurality of light emitting devices 100 according to embodiment 1, and the light reflecting member 110 is disposed between the light emitting devices 100. Further, a light diffusion sheet 111 that diffuses light from the light emitting element 105 so as to be substantially parallel to the upper surface of the light emitting element is disposed above the light emitting device 100 and the light reflecting member 110, and a wavelength conversion layer 112 that converts part of light emitted from the light emitting element 105 into light of another wavelength is disposed thereon substantially parallel to the light diffusion sheet 111.
In general, as the distance (hereinafter, optical distance is also referred to as "OD")/light emitting element Pitch (hereinafter, also referred to as "Pitch") between the base 101 and the light diffusion sheet 111 decreases, the amount of light between the light emitting elements 105 on the surface of the light diffusion sheet 111 decreases, and a dark portion occurs.
However, with the configuration in which the light reflecting member 110 is disposed in this way, the amount of light between the light emitting elements is compensated by the reflected light of the light reflecting member 110, and the brightness unevenness on the surface of the light diffusion sheet 111 is reduced even in a smaller OD/Pitch region.
Specifically, in the light emitting device 200 of the second embodiment, the inclination angle θ of the light reflecting surface of the light reflecting member 110 with respect to the base 101 is set so that the luminance unevenness on the surface of the light diffusing sheet 111 is reduced in consideration of the light distribution characteristics of each light emitting device 100. In order to suppress brightness unevenness on the surface of light diffusion sheet 111 and realize light-emitting device 200 that is thin, light-emitting device 100 preferably has light distribution characteristics such that the amount of light increases in a region with a large light distribution angle, that is, in a region with a light distribution angle close to ± 90 °.
For example, if OD/Pitch is smaller than 0.2, the angle of elevation of light incident on the light reflecting member 110 with respect to the light emitting surface of the light emitting element 105 is smaller than 22 °. Therefore, when the low OD/Pitch is 0.2 or less, the light distribution characteristics of the light emitting device 100, for example, the amount of light with an angle of elevation smaller than 20 ° with respect to the upper surface of the base, are preferably increased in order to improve the light reflection efficiency of the light reflecting member 110. Specifically, it is preferable that the first and second peaks of the luminous intensity are in a range of an elevation angle of less than 20 °. Here, the elevation angle of 20 ° corresponds to 20 ° and 160 ° of the light distribution angle of fig. 4. That is, as shown in fig. 4, it is preferable that the first peak of the emission intensity is in a range where the light distribution angle is smaller than 20 ° and the second peak is in a range where the light distribution angle is larger than 160 °. The light amount at an elevation angle of less than 20 ° is preferably 30% or more, and more preferably 40% or more of the total light amount.
(light reflecting member 110)
The light reflecting member 110 is disposed between the plurality of light emitting elements 105.
The material is not particularly limited as long as it reflects at least the emission wavelength of the light-emitting element 105. For example, a metal plate or a resin containing a white filler is suitably used.
Further, by using a dielectric multilayer film as the reflective surface of the light reflecting member, a reflective surface with less absorption can be obtained. In addition, the reflectance can be arbitrarily adjusted by the design of the film, and the reflectance can be controlled by the angle.
The height of the light reflecting member 110 and the inclination angle θ of the light reflecting surface with respect to the surface of the base 101 may be set to arbitrary values, and the reflecting surface may be a flat surface or a curved surface, and may be formed to have an optimum inclination angle θ and a shape of the reflecting surface so that a desired light distribution characteristic can be obtained. The height of the light reflecting member 110 is preferably 0.3 times or less, and more preferably 0.2 times or less, the distance between the light emitting elements. Thus, the light emitting module 300 having a thin shape and reduced luminance unevenness can be provided.
In the light-emitting device 200 used in an environment where the use temperature greatly changes, the linear expansion coefficients of the light-reflecting member 110 and the base 101 need to be made close to each other. This is because: if the linear expansion coefficients of the light reflecting member 110 and the base 101 are greatly different, the light emitting device 200 is warped due to a temperature change, or the positional relationship between the constituent members, particularly between the light emitting device 100 and the light reflecting member 110, is shifted, and thus desired optical characteristics cannot be obtained. However, it is a practical case that the linear expansion coefficient is not selected variously due to the physical property value. Therefore, it is preferable to form the light reflecting member 110 by an elastically deformable film molding so that the light emitting device 200 does not warp even when the linear expansion coefficient is largely different. If the light reflecting member 110 is made of a material having small elastic deformation (non-fouling material), it expands while maintaining its shape, but if it is a film, it deforms at an appropriate position to absorb the amount of expansion.
The light reflecting member 110 is preferably formed in a plate shape by connecting a plurality of light reflecting members 110, and has a through hole 113 for disposing the light emitting device 200. Fig. 8 shows such a plate-shaped light reflecting plate 110'. Fig. 8(a) is a plan view, and fig. 8(b) is a sectional view taken along line a-a of fig. 8 (a). Such a light reflecting plate 110' can be formed by die forming, vacuum forming, air compression forming, press forming, or the like. The light reflecting plate 110' is disposed on the base 101. The light reflecting member 110 may be formed by a method such as directly drawing a light reflecting resin on the substrate 101. The height of the light reflecting member 110 is preferably 0.3 times or less the distance between the light emitting elements, and more preferably 0.2 times or less the distance between the light emitting elements.
[ example 1 ]
As shown in FIG. 1, in this example, an epoxy glass substrate was used as the base 101, and a Cu material of 35 μm was used as the conductor wiring.
As the light emitting element 105, a nitride-based blue LED having a thickness of 150 μm and a square shape with 1 side of 600 μm in a plan view was used, and an epoxy-based solder resist was used for the insulating member 104.
The light-reflecting film 106 formed on the main surface of the light-emitting element 105 is formed of SiO2Film (82nm) and ZrO2The layer (54nm) was repeated to form 11 layers.
As shown in fig. 2, the transmittance of the light reflecting film 106 at this time is low in the direction perpendicular to the principal surface of the light emitting element (optical axis direction), and increases when the angle is shifted from the optical axis.
The light emitting element 10 is covered with a sealing member 108. The sealing member 108 was made of silicone resin, and had a height (H) of 1.0mm and a cylinder diameter (W) of 3.0 mm.
With such a configuration, light emitted from the light-emitting element 105 is refracted at the interface between the sealing member 108 and the air, and the light distribution angle is further increased. The light distribution characteristics of the light emitting device 100 at this time are shown by the solid lines in fig. 4. The light distribution characteristics when the seal member 108 is not formed are indicated by broken lines in fig. 4. By using the sealing member 108 together with the light reflecting film 106 in this way, a lower OD/Pitch can be achieved.
[ example 2 ]
In example 2, a plurality of light-emitting elements 105 of example 1 were provided, and mounted on a base 101 with a light-reflecting member 110 disposed therebetween. The Pitch (Pitch) was 12.5 mm.
The light reflecting member 110 is a plate-like light reflecting plate and contains TiO2The polypropylene sheet as a filler (thickness (t) was 0.2mm), was molded by vacuum molding so that the reflection angle θ (elevation angle) was 55 ° and the height was 2.4 mm. The light reflecting member 110 is a plate-like light reflecting plate as shown in fig. 8, and is disposed on the insulating member 104.
A milky light diffusing sheet 111 and a wavelength conversion layer 112 are arranged thereon to form a liquid crystal backlight (light emitting module). In such a configuration, fig. 9 shows a result of comparing the presence or absence of the reflection member 110 with the luminance unevenness on the surface of the light diffusion sheet 111. Fig. 9(a) shows a case where the light reflecting member is not arranged, and fig. 9(b) shows a case where the light reflecting member is arranged. As shown in FIG. 9, when the light reflection member is not disposed, the relative luminance is reduced to about 0.6 to 0.7 in the region (250 pixels to 720 pixels) where the relative luminance is high, and when the light reflection member is disposed, the relative luminance is not lower than 0.8 in the region (250 pixels to 720 pixels) where the relative luminance is high. That is, by disposing the light reflecting member, the effect of improving the luminance unevenness can be confirmed.
Industrial applicability
The light emitting device and the light emitting module of the present invention can be used for backlight light sources of liquid crystal displays, various lighting devices, and the like.

Claims (17)

1. A light-emitting device, comprising:
a base body having a conductor wiring;
a light emitting element mounted on the base body and emitting a first light;
a light reflection film provided on an upper surface of the light emitting element;
a sealing member that covers the light-emitting element and the light-reflecting film;
the ratio (H/W) of the height (H) to the width (W) of the sealing member is less than 0.5.
2. The light emitting device of claim 1,
the surface of the seal member is formed of a convex curved surface.
3. The light-emitting device according to claim 1 or 2,
the light reflection film has incident angle dependency with respect to light transmittance of the first light.
4. The light-emitting device according to any one of claims 1 to 3,
the light transmittance of the light reflection film with respect to the first light increases with an increase in absolute value of an incident angle.
5. The light-emitting device according to any one of claims 1 to 4,
the light reflection film is formed of a dielectric multilayer film.
6. The light-emitting device according to any one of claims 1 to 5,
the light reflection film includes an emission peak wavelength of the light emitting element with respect to a reflection wavelength bandwidth of the vertically incident light, and a reflection wavelength bandwidth on a long wavelength side is wider than a reflection wavelength bandwidth on a short wavelength side with respect to the emission peak wavelength.
7. The light-emitting device according to any one of claims 1 to 6,
30% or more of the total amount of light emitted from the light-emitting device is emitted in a direction having an angle of elevation smaller than 20 ° with respect to the upper surface of the base.
8. The light-emitting device according to any one of claims 1 to 6,
40% or more of the total amount of light emitted from the light-emitting device is emitted in a direction having an angle of elevation smaller than 20 ° with respect to the upper surface of the base.
9. The light-emitting device according to any one of claims 1 to 8,
the ratio (H/W) of the height (H) to the width (W) of the sealing member is 0.3 or less.
10. The light-emitting device according to any one of claims 1 to 9,
the light emitting element is flip-chip mounted.
11. The light-emitting device according to claim 1 or 2,
the light emitting element is disposed so as to straddle two insulated and separated conductor wirings having different polarities, and an electrode of the light emitting element and the conductor wiring are electrically connected.
12. The light emitting device of claim 11,
the conductor wiring is covered with an insulating member at a portion electrically connected to the light emitting element.
13. An integrated light-emitting device comprising a plurality of light-emitting devices according to any one of claims 1 to 12, wherein light-reflecting members are disposed between the light-emitting devices.
14. The integrated light emitting device according to claim 13,
the height of the light reflecting member is 0.3 times or less of the distance between the light emitting devices.
15. The integrated light emitting device according to claim 13,
the height of the light reflecting member is 0.2 times or less of the distance between the light emitting devices.
16. A light emitting module, comprising: a light emitting device according to any one of claims 1 to 12; and a wavelength conversion member that partially absorbs light of the light emitting element on a light extraction surface side of the light emitting device and converts the light into light having a wavelength different from an emission wavelength of the light emitting element.
17. A light emitting module, comprising: the integrated light-emitting device according to any one of claims 13 to 15; and a wavelength conversion member that partially absorbs the light of the light emitting element on a light extraction surface side of the integrated light emitting device and converts the light into light having a wavelength different from the light emission wavelength of the light emitting element.
CN202110686880.2A 2015-10-08 2016-10-08 Light emitting device, integrated light emitting device, and light emitting module Pending CN113437202A (en)

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