CN113383317A - 一种处理装置、方法及相关设备 - Google Patents

一种处理装置、方法及相关设备 Download PDF

Info

Publication number
CN113383317A
CN113383317A CN201980090641.1A CN201980090641A CN113383317A CN 113383317 A CN113383317 A CN 113383317A CN 201980090641 A CN201980090641 A CN 201980090641A CN 113383317 A CN113383317 A CN 113383317A
Authority
CN
China
Prior art keywords
dram
rank
command
memory interface
ddr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201980090641.1A
Other languages
English (en)
Other versions
CN113383317B (zh
Inventor
陈政荫
刘宇
朱强
卢晓博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN113383317A publication Critical patent/CN113383317A/zh
Application granted granted Critical
Publication of CN113383317B publication Critical patent/CN113383317B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)

Abstract

本发明实施例公开了一种处理装置、方法及相关设备，其中，处理装置包括，处理模块和N个动态随机存取存储器DRAM内存接口，所述处理模块与所述N个DRAM内存接口之间通过总线相连，且所述处理模块还通过物理连线分别与所述N个DRAM内存接口直连；所述处理模块，用于：判断第一命令是否为动态随机存储器DRAM读写命令；若所述第一命令为DRAM读写命令，通过第一物理连线向第一DRAM内存接口发送第一指示信号；所述第一DRAM内存接口，用于在接收到所述第一指示信号的情况下，控制所述第一DRAMRANK进入工作状态。采用本申请，可以保证处理装置的低功耗和低时延。

Description

PCT国内申请，说明书已公开。

Claims (22)

  1. PCT国内申请，权利要求书已公开。
CN201980090641.1A 2019-01-31 2019-01-31 一种处理装置、方法及相关设备 Active CN113383317B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/074309 WO2020155074A1 (zh) 2019-01-31 2019-01-31 一种处理装置、方法及相关设备

Publications (2)

Publication Number Publication Date
CN113383317A true CN113383317A (zh) 2021-09-10
CN113383317B CN113383317B (zh) 2023-07-18

Family

ID=71840218

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980090641.1A Active CN113383317B (zh) 2019-01-31 2019-01-31 一种处理装置、方法及相关设备

Country Status (2)

Country Link
CN (1) CN113383317B (zh)
WO (1) WO2020155074A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116360859A (zh) * 2023-03-31 2023-06-30 摩尔线程智能科技(北京)有限责任公司 电源域的访问方法、装置、设备及存储介质

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113961490B (zh) * 2021-11-04 2023-09-26 上海安路信息科技股份有限公司 基于fpga监测ddr信号的系统、方法、fpga和介质
CN117193506A (zh) * 2022-05-31 2023-12-08 哲库科技(上海)有限公司 存储器、片上系统、终端设备及供电控制方法
CN117806809A (zh) * 2022-09-26 2024-04-02 华为技术有限公司 内存刷新方法和装置
CN118057532A (zh) * 2022-11-21 2024-05-21 华为技术有限公司 命令处理方法和装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1144434A (zh) * 1994-07-29 1997-03-05 Dva公司 视频解压缩方法和装置
JPH11353874A (ja) * 1998-06-05 1999-12-24 Fujitsu Ltd 同期型ｄｒａｍのアクセス方法、インタフェース回路、及び、半導体集積回路装置
CN101226770A (zh) * 2008-01-21 2008-07-23 戴葵 具有数据处理能力的动态随机存储器装置
US20110138162A1 (en) * 2009-12-08 2011-06-09 Scott Chiu Reconfigurable load-reduced memory buffer
CN102243526A (zh) * 2010-05-14 2011-11-16 炬力集成电路设计有限公司 双倍数据速率内存的内存控制器及其控制方法
CN102725709A (zh) * 2010-01-28 2012-10-10 苹果公司 休眠状态下的存储器功率降低
US20180121376A1 (en) * 2016-11-01 2018-05-03 SK Hynix Inc. Memory device supporting rank-level parallelism and memory system including the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090032415A (ko) * 2007-09-28 2009-04-01 삼성전자주식회사 프로세서 웨이크 업 기능을 갖는 멀티포트 반도체 메모리장치 및 이를 채용한 멀티 프로세서 시스템 그리고 멀티프로세서 시스템에서의 프로세서 웨이크 업 방법
US7971081B2 (en) * 2007-12-28 2011-06-28 Intel Corporation System and method for fast platform hibernate and resume
EP2915049B1 (en) * 2012-10-30 2020-03-04 Hewlett-Packard Enterprise Development LP Smart memory buffers
US20160350002A1 (en) * 2015-05-29 2016-12-01 Intel Corporation Memory device specific self refresh entry and exit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1144434A (zh) * 1994-07-29 1997-03-05 Dva公司 视频解压缩方法和装置
JPH11353874A (ja) * 1998-06-05 1999-12-24 Fujitsu Ltd 同期型ｄｒａｍのアクセス方法、インタフェース回路、及び、半導体集積回路装置
CN101226770A (zh) * 2008-01-21 2008-07-23 戴葵 具有数据处理能力的动态随机存储器装置
US20110138162A1 (en) * 2009-12-08 2011-06-09 Scott Chiu Reconfigurable load-reduced memory buffer
CN102725709A (zh) * 2010-01-28 2012-10-10 苹果公司 休眠状态下的存储器功率降低
CN102243526A (zh) * 2010-05-14 2011-11-16 炬力集成电路设计有限公司 双倍数据速率内存的内存控制器及其控制方法
US20180121376A1 (en) * 2016-11-01 2018-05-03 SK Hynix Inc. Memory device supporting rank-level parallelism and memory system including the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116360859A (zh) * 2023-03-31 2023-06-30 摩尔线程智能科技(北京)有限责任公司 电源域的访问方法、装置、设备及存储介质
CN116360859B (zh) * 2023-03-31 2024-01-26 摩尔线程智能科技(北京)有限责任公司 电源域的访问方法、装置、设备及存储介质

Also Published As

Publication number Publication date
CN113383317B (zh) 2023-07-18
WO2020155074A1 (zh) 2020-08-06

Similar Documents

Publication Publication Date Title
CN113383317A (zh) 一种处理装置、方法及相关设备
EP3662475B1 (en) Partial refresh technique to save memory refresh power
US7966506B2 (en) Saving power in a computer system
US8909856B2 (en) Fast exit from self-refresh state of a memory device
US9418723B2 (en) Techniques to reduce memory cell refreshes for a memory device
US7778099B2 (en) Semiconductor memory, memory system, and memory access control method
US8850236B2 (en) Power gating of cores by an SoC
CN105512059B (zh) 半导体装置及数据处理系统
CN108140406B (zh) 用于存储器的自刷新的方法及相关设备
JP2016526750A (ja) Ｄｒａｍサブアレイレベル自律リフレッシュメモリコントローラの最適化
KR101695338B1 (ko) 동적 주파수 메모리 제어
US20140237272A1 (en) Power control for data processor
CN109151961B (zh) 一种移动终端的运行方法、终端及计算机可读存储介质
JP2009515263A (ja) Ｃ０時のセルフリフレッシュメカニズム
US11922061B2 (en) Adaptive memory refresh control
WO2018188085A1 (zh) 内存刷新技术及计算机系统
US10318187B2 (en) Memory controller and memory system including the same
US11783883B2 (en) Burst mode for self-refresh
WO2018004830A1 (en) Memory controller-controlled refresh abort
US9704544B2 (en) Method, apparatus and system to manage implicit pre-charge command signaling
CN115668377A (zh) 用于dram的刷新管理
WO2019141050A1 (zh) 一种刷新处理方法、装置、系统及内存控制器
US11783885B2 (en) Interactive memory self-refresh control
CN105531681A (zh) 存储装置、存储系统以及存储装置控制方法
WO2022178772A1 (zh) 一种存储器的刷新方法、存储器、控制器及存储系统

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant