CN113330535A - 基板处理装置以及基板处理方法 - Google Patents
基板处理装置以及基板处理方法 Download PDFInfo
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Abstract
本发明提供一种基板处理装置及基板处理方法,能够在减少微粒等异物的残留的同时获得抗蚀膜的较高去除率。以处理面(S1)与转台(14)的上表面隔开规定间隔且处理面(S1)朝下的姿势将基板(11)固定在壳体(12)内的转台(14)上。在基板(11)与转台(14)一体旋转的同时,从设置在转台(14)的中央部的喷出部(16)喷出臭氧气体。利用喷出的臭氧气体去除处理面(S1)上的抗蚀膜。
Description
技术领域
本发明涉及半导体晶片等基板处理装置以及基板处理方法。
背景技术
通常,在半导体的晶片工艺中,作为用于形成器件结构的蚀刻或离子注入等的掩模,广泛使用感光性树脂即抗蚀膜(resist film)。即,将在基板的处理面上形成的抗蚀膜作为掩模进行蚀刻或离子注入等之后,从基板的处理面去除抗蚀膜。
作为去除抗蚀膜的方法,广泛采用使用硫酸和双氧水的混合液(硫酸双氧水混合液)的方法。另外,提出了使用对环境影响小的臭氧(O3)水的方法(参照专利文献1)。进而,已知有利用臭氧或等离子体去除抗蚀膜的方法,或者在利用等离子体去除抗蚀膜表面的牢固变质层之后,利用化学溶液去除剩余的抗蚀膜,然后利用纯水等对处理面进行冲洗的方法(参照专利文献2)。在用臭氧气体或等离子体去除抗蚀膜时,将基板搬入处理装置内,对使处理面朝上放置的基板从上方吹臭氧气体,或者照射等离子体进行抗蚀膜的灰化后,将基板从处理装置移送到化学处理装置,在化学处理装置中利用化学溶液进行处理并利用纯水进行清洗。
现有技术文献
专利文献
专利文献1:国际公开WO2010/140581号
专利文献2:日本专利特开2009-218548号公报
发明内容
发明要解决的课题
使用臭氧(O3)水去除抗蚀膜的方法对环境的影响小,但抗蚀膜的去除率低,存在对一张基板的处理时间变长的问题。另一方面,如上所述的利用臭氧气体或等离子体去除抗蚀膜的方法,在基板的处理面上残留有较多的微粒等异物,最终需要用化学溶液或纯水进行充分的清洗,因此存在处理时间变长的问题。
本发明是鉴于上述情况而完成的,其目的在于提供一种能够在减少微粒等异物的残留的同时获得具有较高抗蚀膜去除率的基板处理装置和基板处理方法。
用于解决课题的技术手段
本发明的基板处理装置,包括:转台,围绕竖直轴转动自如地配置,在对基板的处理面进行处理时旋转;基板保持部,其设置在所述转台上,在使所述处理面朝下而与所述转台的上表面分离的状态下将所述基板保持为水平并与所述转台一体旋转;喷出部,固定在相比于保持在所述转台上的所述基板的所述处理面靠下侧,并配置在所述转台的中央部,且具有用于喷出所供给的流体并供给于所述处理面上的一个或多个喷嘴;以及臭氧气体供给部,在所述转台的旋转过程中,对所述喷出部供给臭氧气体作为所述流体。
本发明的基板处理方法包括:基板保持工序,利用设于转台的基板保持部,使所述基板保持为基板的处理面朝下并且水平,且处于与绕竖直轴转动自如的所述转台的上表面分离的状态;旋转工序,使所述转台与所述基板一体旋转;以及臭氧气体供给工序,从所述转台的中央部向旋转中的所述转台与所述基板之间喷出臭氧气体,并提供给所述处理面。
发明效果
根据本发明,从转台的中央部,向转台和与该转台一体旋转的处理面朝下的基板之间喷出臭氧气体并提供给处理面,因此,能够在得到较高去除率的同时减少微粒等异物的残留。
附图说明
图1是表示基板处理装置的构造的剖视图。
图2是表示喷出部的构造的剖视图。
图3是表示去除抗蚀膜的步骤的流程图。
图4是表示设置四个喷嘴头作为喷出部的例子的说明图。
图5是表示作为喷出部设置了一个喷嘴头的例子的说明图,其中,喷嘴头具有喷出方向、喷出量、喷出的流体的扩散模式不同的两个喷嘴。
图6是表示作为喷出部设置了两个喷嘴头的例子的说明图,其中,各喷嘴头具有喷出方向、喷出量、喷出的流体的扩散模式不同的两个喷嘴。
具体实施方式
图1中,基板处理装置10是用于去除形成在基板11上的抗蚀膜(未示出)的装置。该基板处理装置10具有:使用臭氧气体去除抗蚀膜的干燥模式和在干燥模式后使用处理液去除残留在基板11上的微粒等异物的湿式模式。基板11例如是硅晶片等半导体基板。在该例子中,形成有各种半导体元件和电路的基板11的一个表面为成为处理对象的处理面S1,基板处理装置10用于去除形成在该处理面S1上的抗蚀膜。
基板处理装置10具备壳体12、转台14、装载机构15、喷出部16、供给部17、卤素灯加热器18、排出部19等,各部件由控制部(未示出)统一控制。壳体12是有底的圆筒状,在上部设有开口为圆形的上部开口12a。上部开口12a形成为直径大于基板11,通过该上部开口12a,从壳体12取出基板11或将基板放入壳体12中。另外,如后所述,在该例子中,上部开口12a成为将外部空气导入壳体12内的导入口。
在壳体12内容纳有圆盘状的转台14。另外,在该壳体12中容纳有基板11。转台14绕竖直的旋转轴Z转动自如,在使其上表面保持水平的状态下转动。转台14固定在驱动轴21的上端部。该驱动轴21与转台14同轴。驱动轴21在壳体12的底面12b的厚度方向(上下方向)贯通壳体12的底面12b,由设置在底面12b的开口部的轴承22转动自如地支承。在驱动轴21的下部固定有皮带轮23。在该皮带轮23与安装在电动马达24的旋转轴上的皮带轮25之间挂有皮带26。由此,当电动马达24驱动时,驱动轴21与转台14一体旋转。转台14从干燥模式的开始至湿式模式的结束为止连续旋转。通过增减电动马达24的速度来调节转台14的转速。
驱动轴21在其内部形成有沿上下方向贯通的贯通孔21a。另外,在转台14的中央部形成有与贯通孔21a连接的贯通孔14a。在贯通孔14a和贯通孔21a中配置有筒状的固定轴28。固定轴28与壳体12等一起固定在外部的框架等上。因此,转台14和驱动轴21绕固定轴28旋转。由供给管31a至31c(参见图2)构成的供给管部31穿过固定轴28的中空部28a。
用于保持基板11的基板保持部32设置在转台14的上表面上。基板保持部32由设置在转台14的周缘部的多个保持件32a构成。多个保持件32a沿转台14的周向以预定间隔排列。各保持件32a与转台14一体旋转。另外,在图1中,仅描绘了两个保持件32a,但实际上例如设有六个保持件32a。
保持件32a例如在其前端形成有台阶部,基板11的周缘部分别载置在各保持件32a的台阶部。由此,通过基板保持部32,使基板11支承为与转台14的上表面隔开规定间隔平行即水平的状态。另外,各保持件32a分别使基板11沿其径向移动,从而由各保持件32a夹持基板11。这样,基板11被基板保持部32保持,固定为与转台14同轴。这样固定的基板11与转台14一体旋转。上述基板保持部32的结构为一个示例,不限于此。例如,基板保持部32也可以由与基板11的处理面S1侧的周缘部抵接而对基板11和转台14规定间隔的多个销和沿径向夹持而固定基板11的多个销构成。
基板11与转台14的上表面之间的间隔例如设定为25mm左右。该间隔优选在1mm~50mm的范围内,更优选在10mm~30mm的范围内。如果间隔为1mm以上,则能够容易防止基板11与转台14的接触。另外,通过使间隔为1mm或数mm左右,能够在基板11与转台14之间以较少的供给量形成高速的臭氧气体的气流。如果间隔为50mm以下,则容易在基板11和转台14之间充满高浓度的臭氧气体。另外,如果为10mm以上,则容易使臭氧气体的气流均匀化,如果为30mm以下,则容易维持更高的臭氧气体浓度。
基板11的取放由装载机构15,如上所述通过上部开口12a进行。装载机构15从容纳盒(未示出)取出作为处理对象的基板11,将基板11移动到基板保持部32所支承的位置。基板11以处理面S1朝上的姿势放置在容纳盒中。因此,装载机构15在从容纳盒中取出基板11后,将基板11上下反转,使处理面S1朝下。另外,装载机构15在将处理后的基板11从壳体12内取出后,将基板11上下反转而使处理面S1朝上,然后将基板11送回到容纳盒中。
在转台14的中央部配置有用于喷出所供给的流体的喷出部16。作为供给至喷出部16的流体有:用于去除抗蚀膜的臭氧气体、作为用于冷却基板11的冷却用气体的氧气、用于去除处理面S1的微粒等异物的化学溶液、用于清洗处理面S1的纯水。在该示例中,化学溶液和纯水为处理液。喷出部16设置在比由基板保持部32保持的基板11的处理面S1更低的位置。供给管部31的一端与喷出部16连接,另一端与供给部17连接。供给部17用于供给臭氧气体、氧气、化学溶液和纯水。由此,喷出部16可选择性地喷出臭氧气体、氧气、化学溶液以及纯水。
在壳体12的上方配置有卤素灯加热器18。卤素灯加热器18设置为向下放射红外线的姿势。该卤素灯加热器18通过移动机构34,如图1所示,在配置于上部开口12a的上方以加热基板11的加热位置和为了从上部开口12a取放基板11而从上部开口12a的上方后退的后退位置之间沿水平方向移动。加热位置的卤素灯加热器18配置在与上部开口12a的周缘之间形成较小间隙的高度。另外,在图1中,为了便于图示,夸大描绘了加热位置上的卤素灯加热器18与上部开口12a的周缘之间的间隙。另外,在该示例中,使卤素灯加热器18沿水平方向移动而成为加热位置和后退位置,但为了不妨碍基板11的取放,也可以将从上部开口12a向上方离开的位置作为后退位置而利用移动机构34使卤素灯加热器18沿上下方向移动。
在对基板11进行各种处理时,卤素灯加热器18通过移动机构34位于加热位置。加热位置的卤素灯加热器18,经由上部开口12a通过对位于卤素灯加热器18正下方的基板11的背面S2(与处理面S1相反侧的表面)照射红外线来加热基板11。卤素灯加热器18在用臭氧气体对基板11进行处理时亮灯,照射红外线。由于卤素灯加热器18与背面S2之间没有障碍物,因此能够高效地加热基板11。通过加热基板11,促进基于臭氧的抗蚀膜的氧化分解。
另外,在该例中,使用了卤素灯加热器18作为加热器,但也可以使用其他各种加热器。另外,在能够将卤素灯加热器18从上部开口12a向上方隔开充分间隔进行配置的情况下,也可以省略移动机构34而使卤素灯加热器18的位置固定。
壳体12中设置有导向筒35。该例中的导向筒35是呈其上部向上方直径逐渐减小的圆锥形的筒状。导向筒35例如固定于壳体12,其轴心被调整为与转台14的旋转中心一致。另外,导向筒35的下端到达壳体12的底面12b。在导向筒35的上部开口35a内配置有转台14。开口35a的内径比转台14的外径稍大,使转台14与导向筒35之间的间隙变小。该导向筒35与壳体12之间形成排气路径。另外,通过设置该导向筒35,从而防止由转台14的旋转引起的微粒的扬起,抑制微粒向基板11的附着,另外防止处理液和其气化物向驱动轴21或轴承22等机构部流动。
排出部19由作为所述取入口的上部开口12a、形成于壳体12的底面12b的排出口37、吸引装置38等构成。作为吸引装置38,例如使用泵,经由配管39与排出口37连接。排出部19通过吸引装置38的驱动,产生使排出口37的压力比基板11与转台14之间以及上部开口12a小的压力差。由此,将从基板11与转台14之间流出的各种气体、处理液及其飞沫、进而因处理而产生的微粒等异物有效地引导到排出口37并排出到壳体12的外部。吸引装置38设置有分离机构,将从排出口37吸引的气体和液体分离并排出。
另外,利用上述压力差,从上部开口12a向壳体12内导入外部空气,由此形成从上部开口12a通过壳体12与导向筒35之间而朝向排出口37的气流(图1的箭头F)。由此,防止臭氧气体、处理液和处理液的气化物、微粒等异物经由上部开口12a向壳体12的外部漏出,并且将从基板11与转台14之间流出的各种气体、处理液、微粒等异物有效地导入排出口37并向壳体12的外部排出。
从利用自上而下流动的气流将自基板11与转台14之间流出的气体、液体、微粒等引导至排出口37的观点来看,构成排出部19的取入口也可以设置在比由基板保持部32保持的基板11的处理面S1高的位置。另外,从将自基板11与转台14之间流出的气体、液体、微粒等引导至排出口37的观点出发,排出口37可以设置在比转台14的上表面低的位置。因此,例如,采用了在处理中气密性地堵塞上部开口12a的结构的情况下,也可以在壳体12的侧面的、比由基板保持部32保持的基板11的处理面S1高的位置设置一个或多个开口作为取入口。另外,也可以采用从贯通壳体12的管的一端的开口向壳体12内导入外部空气的结构,在该情况下,只要使管的一端的开口位于比由基板保持部32保持的基板11的处理面S1高的位置即可。同样,例如也可以在壳体12的侧面的、比转台14的上表面低的位置设置排出口37。另外,也可以采用将气体和液体分离后排出到壳体12外的结构。另外,在采用气密性地堵塞上部开口12a的结构的情况下,通过用红外线的透射率高的例如石英玻璃来堵塞上部开口12a,能够使用卤素灯加热器18等从壳体12的外侧加热基板11。
如图2所示,在该例中,作为喷出部16,设置有固定在固定轴28的上端且配置在转台14上侧的两个喷嘴头41。各喷嘴头41配置为夹着转台14的旋转轴Z。喷嘴头41是具有以朝向上侧的方式倾斜的侧面41a的圆台状,在其内部形成有中空部41b。另外,在侧面41a上形成有用于将供给于中空部41b的流体朝向基板11的处理面S1喷出的喷嘴43。在该例中,在侧面41a的朝向与旋转轴Z相反的部分,在各喷嘴头41上分别形成有一个喷嘴43。各喷嘴43分别向斜上方喷出气体或液体。
供给部17具有臭氧气体供给部17a、氧气供给部17b、化学溶液供给部17c、纯水供给部17d。臭氧气体供给部17a在干燥模式下经由供给管31a向各喷嘴头41的中空部41b供给臭氧气体。如上所述,提供臭氧气体是为了灰化并去除抗蚀膜。氧气供给部17b经由与臭氧气体相同的供给管31a向各喷嘴头41的中空部41b供给氧气。在干燥模式下停止臭氧气体的供给后提供氧气。该氧气用作将被加热为高温的基板11冷却至适于后续的湿式模式下的处理所需的温度的冷却用气体。
另外,在该例中,使用了臭氧气体供给部17a和氧气供给部17b,但也可以由用于使从氧气供给源供给的氧气臭氧化的臭氧发生器来构成臭氧气体供给部17a,而省略氧气供给部17b。此时,通过关闭臭氧发生器,可以从臭氧气体供给部17a供给作为冷却用气体的氧气。冷却用气体不限于氧气,也可以使用惰性气体(例如氮气)等。在使用氧气以外的冷却用气体的情况下,优选设置与供给臭氧气体的供给管31a不同的供给管,使用该供给管向喷嘴头41供给冷却用气体。
化学溶液供给部17c以湿式模式经由供给管31b向各喷嘴头41的中空部41b提供化学溶液。作为化学溶液,使用用于去除处理面S1的微粒的例如双氧水和氨的混合水溶液SC1(Standard Clean 1)。纯水供给部17d为了清洗(用纯水冲洗)基板11的处理面S1,经由供给管31c向各喷嘴头41的中空部41b提供纯水。该纯水的供给在湿式模式下停止化学溶液的供给后进行。
调整各喷嘴头41的喷嘴43以及从供给部17向各喷嘴头41供给的流体的供给量,以使得向处理面S1供给臭氧气体或化学溶液等流体的喷出方向、流体的喷出量以及喷出的流体的扩散模式均匀。
另外,也可以采用经由共同的供给管将臭氧气体供给部17a、氧气供给部17b、化学溶液供给部17c、纯水供给部17d与各喷嘴头41连接的结构。从能够防止因臭氧气体的供给而残留在供给管的处理液从喷嘴43喷出、或者能够省略用于防止该喷出的机构的观点、能够独立地调整各喷嘴头41的供给量的观点等出发,如上所述优选使用不同的供给管。
接下来,对上述结构的作用进行说明。另外,以下说明的处理的步骤仅为示例,并非用于限定处理的步骤。吸引装置38始终被驱动,处于对壳体12内进行吸引的状态。卤素灯加热器18通过移动机构34移动到后退位置。之后,如图3所示,通过装载机构15从盒中取出作为处理对象的基板11(步骤ST1)。由于基板11是以处理面S1朝上的方式容纳在盒中,因此装载机构15使取出的基板11反转180°,使处理面S1朝下(步骤ST2)。
通过装载机构15,反转后的基板11通过上部开口12a移动到壳体12内的转台14上,该基板11的周缘载置于各保持件32a的台阶上。在解除装载机构15对基板11的保持后,各保持件32a动作,成为基板11由各保持件32a保持的状态(步骤ST3)。由此,基板11以处理面S1朝下、与转台14的上表面隔开规定间隔、且处理面S1与转台14的上表面平行的状态固定在转台14上。
基板11固定后,卤素灯加热器18通过移动机构34移动到加热位置。之后,电动马达24被驱动,转台14开始与基板11一体旋转(步骤ST4)。
在转台14开始旋转后,臭氧气体供给部17a开始臭氧气体的供给(步骤ST5)。此时,将臭氧气体的流量调整为例如2L(升)/分钟~20L/分钟的范围内。进一步,卤素灯加热器18亮灯(步骤ST6)。通过该卤素灯加热器18的亮灯,基板11从背面S2侧被加热到规定的温度。此时的基板11的温度例如在150℃~450℃的范围内。
来自臭氧气体供给部17a的臭氧气体经由供给管31a供给至各喷嘴头41。由此,臭氧气体从各喷嘴头41的喷嘴43分别向基板11的处理面S1喷出。从喷嘴43喷出的臭氧气体通过基板11的旋转而沿周向扩散,同时朝向基板11的外周流动。由此,处理面S1的整个表面暴露在从喷嘴43喷出的臭氧气体中。处理面S1的抗蚀膜如果这样暴露在臭氧气体中,则该部分被臭氧氧化分解,逐渐被分解去除。另外,由于通过卤素灯加热器18对基板11进行加热,因此促进了基于臭氧的抗蚀膜的氧化分解。作为气体的臭氧气体与臭氧水等液体相比导热率小,因此基板11的温度不易降低,有效地促进了抗蚀膜的氧化分解。
臭氧气体与抗蚀膜反应而生成的气体以及含有未反应的臭氧的气体到达基板11的外周时,由于压力差而被引导至排出口37并被排出。因此,臭氧与抗蚀膜反应而生成的气体和未反应的臭氧气体不会从上部开口12a漏出到壳体12的外侧。
另外,由于处理面S1朝下,因此在处理面S1上产生的微粒等异物不易残留在处理面S1上。离开处理面S1的微粒等落到转台14上,或者与上述气体一起被运送到基板11的外侧,从排出口37排出。
如果从臭氧气体的供给开始时刻经过了规定处理时间(步骤ST7为“是”),则卤素灯加热器18熄灯(步骤ST8),并且停止臭氧气体的供给,开始从氧气供给部17b供给氧气(步骤ST9)。规定处理时间被预先设定为能够完全去除抗蚀膜的时间。如上所述,处理面S1朝下,微粒等异物不易滞留在处理面S1上,因此,在利用该臭氧气体进行处理的处理结束阶段,处理面S1上的微粒等异物的残留较少。
来自氧气供给部17b的氧气经由供给管31a供给到各喷嘴头41,从各喷嘴头41的喷嘴43喷出。这样,一边供给氧气,一边继续基板11和转台14的旋转,由此,基板11被高效地冷却到适于下一湿式模式下的处理的规定温度。另外,在基板11和转台14的旋转过程中,通过向它们之间供给氧气,能够抑制附着在壳体12的内壁上而剥离的微粒等异物被引入到基板11与转台14之间。其结果能够防止基板11冷却时微粒等异物附着在处理面S1上。
如果基板11被冷却到规定温度(例如100℃左右)(步骤ST10为“是”),则停止氧气的供给(步骤ST11),转移至湿式模式。基板11的温度例如由非接触式温度传感器(未示出)测量。另外,也可以在经过了将基板11的温度冷却到规定温度所需的时间的时刻,转移至湿式模式。
在湿式模式下,首先为了去除微粒而进行化学处理(步骤ST12)。另外,在湿式模式下,基板11继续旋转。在化学处理中,来自化学溶液供给部17c的化学溶液经由供给管31b被供给至各喷嘴头41。化学溶液根据其种类被加温。所供给的化学溶液从各喷嘴头41的喷嘴43朝向基板11的处理面S1喷出。由此,化学溶液被供给至处理面S1,该化学溶液通过基板11的旋转,在处理面S1上沿周向扩散的同时向基板11的外周流动。这样,化学溶液被供给至处理面S1的整个表面,处理面S1上的微粒被去除。
如上所述,由于处理面S1上微粒等异物的残留少,因此能够缩短化学溶液的处理时间。例如,在化学溶液为SC1的情况下,将SC1加热至40℃~80℃进行供给,在10秒~60秒的处理时间内停止化学溶液的供给。
化学处理后,进行纯水冲洗处理(步骤ST13)。从纯水供给部17d经由供给管31c向各喷嘴头41供给纯水,从各喷嘴头41的喷嘴43向基板11的处理面S1喷出纯水。由此,纯水被提供给处理面S1,该纯水通过基板11的旋转,在处理面S1上沿周向扩散的同时向基板11的外周流动。这样,纯水被提供给处理面S1的整个表面,并进行清洗。经过规定时间后停止纯水的供给。
在上述化学处理和纯水冲洗处理中,化学溶液和纯水从喷嘴43直接地或从处理面S1落下也供给到转台14的上表面,在转台14的上表面扩散。因此,与基板11同样,对转台14的上表面也进行附着的微粒等异物的去除和利用纯水的清洗。另外,对于各保持件32a,也同样地进行附着的微粒等异物的去除和利用纯水的清洗。从旋转的基板11和转台14飞溅的化学溶液和纯水与壳体12的内壁碰撞。因此,进行附着在壳体12的内壁上的微粒等异物的去除和利用纯水的清洗。这样,基板处理装置10在湿式模式下,与基板11的处理同时地进行壳体12的内部自清洁。
在纯水冲洗处理之后,增大转台14的转速,即基板11的转速,进行基板11的离心干燥(步骤ST14)。由此,附着在基板11的两面的纯水在离心力的作用下飞散,基板11被干燥。此时,转台14的上表面、各保持件32a也同样被干燥。
另外,在化学处理、纯水冲洗处理和离心干燥中,从基板11和转台14流出的化学溶液和纯水、以及附着在壳体12的内壁上并流下的化学溶液和纯水被吸引到排出口37而排出。另外,即使产生化学溶液和纯水的细小飞沫,该飞沫也会被来自上部开口12a的气流引导至排出口37。因此,化学溶液和纯水的飞沫不会从上部开口12a漏出。
离心干燥结束后,停止电动马达24,停止转台14和基板11的旋转(步骤ST15)。在解除保持件32a对基板11的保持后(步骤ST16),利用装载机构15通过上部开口12a取出基板11(步骤ST17)。装载机构15将基板11反转,使处理面S1朝上(步骤ST18),将基板11容纳在盒中(步骤ST19)。
如上所述,结束对一枚基板11的处理,之后以同样的步骤对新的基板11进行处理。如上所述,由于转台14和壳体12的内部自清洗已完成,所以能够立即进行新基板11的处理。
如上所述,所述基板处理装置10在同一壳体12内进行利用臭氧气体的处理和利用处理液的各处理,因此,不需要设置用于各处理的壳体和装置,另外,也不需要设置用于在这些装置之间运送基板的运送装置。
上述示例中的喷出部由两个喷嘴头构成,但喷出部的结构不限于此,也可以是一个或三个以上,喷嘴的个数也可以是一个或多个。例如,图4在固定轴28的上端设置四个喷嘴头54作为喷出部16,在各喷嘴头54上分别设置一个喷嘴43。例如,各喷嘴43喷出流体的方向各错开90°。图5中,作为喷出部16设置一个喷嘴头55,在喷嘴头55上设置两个喷嘴43a、43b,其流体的喷出方向、喷出量和喷出的流体的扩散模式不同。相对地,喷嘴43a的喷出量及喷出的流体的扩散范围小,喷嘴43b的喷出量及喷出的流体的扩散范围大。此外,在图6中,在作为喷出部16的两个喷嘴头56上各设置两个共计四个喷嘴43c~43f,喷嘴43c~43f的流体的喷出方向、喷出量以及喷出的流体的扩散模式互不相同。
在上述中,喷出部配置在转台上,但只要配置在比基板的处理面靠下侧即可,例如也可以将形成有喷嘴的表面设为与转台的上表面相同的高度或比转台的上表面低的位置。另外,也可以分别设置喷出臭氧气体等气体的喷嘴和喷出处理液的喷嘴。
在上述的示例中,在壳体内设置有一个导向筒,但也可以配置为将上部开口的高度不同的多个导向筒设置成使转台的旋转中心与各轴心一致、并且使转台以能够在形成于各导向筒的上部的各开口内旋转的方式升降的结构。根据该结构,在最外侧的导向筒与壳体之间、以及导向筒与导向筒之间形成有气流的多个路径。由此,根据供给的气体或处理液的种类,改变转台的高度来进行处理,由此,可以改变从转台与基板之间流出的气体或处理液的流动路径,能够将它们分别排出到壳体外。另外,关于这样的结构,在日本特开2012-209559号公报、日本特开2007-180268号公报中有记载。
附图标记说明
10:基板处理装置
11:基板
12:壳体
12a:上部开口
14:转台
16:喷出部
17:供给部
19:排出部
32:基板保持部
43:喷嘴
Claims (13)
1.一种基板处理装置,其特征在于,包括:
转台,围绕竖直轴转动自如地配置,在对基板的处理面进行处理时使转台旋转;
基板保持部,设置在所述转台上,使所述处理面朝下且处于与所述转台的上表面分离的状态使所述基板保持为水平,所述基板保持部与所述转台一体地旋转;
喷出部,固定在相比于保持在所述转台上的所述基板的所述处理面靠下侧,并配置在所述转台的中央部,且具有用于将所供给的流体喷出并供给于所述处理面的一个或多个喷嘴;以及
臭氧气体供给部,在所述转台的旋转中,对所述喷出部供给臭氧气体作为所述流体。
2.如权利要求1所述的基板处理装置,其特征在于,包括:
加热器,在从所述臭氧气体供给部向所述喷出部供给臭氧气体时,从上方对保持于所述基板保持部的所述基板进行加热。
3.如权利要求1或2所述的基板处理装置,其特征在于,具有:
干燥模式,从所述臭氧气体供给部向所述喷出部供给臭氧气体,用臭氧气体对所述处理面进行处理;以及
湿式模式,在所述干燥模式后转移至所述湿式模式,用处理液对与所述转台一体旋转的所述基板的所述处理面进行处理,
所述基板处理装置包括处理液供给部,所述处理液供给部用于在所述湿式模式下向所述喷出部供给所述处理液作为所述流体。
4.如权利要求3所述的基板处理装置,其特征在于,
所述处理液供给部对所述喷出部作为所述处理液供给用于去除微粒的化学溶液后供给纯水。
5.如权利要求3或4所述的基板处理装置,其特征在于,包括:
冷却用气体供给部,在转移至所述湿式模式之前,代替臭氧气体向所述喷出部供给冷却用气体,对与所述转台一体旋转的所述基板进行冷却。
6.如权利要求1~5中任一项所述的基板处理装置,其特征在于,
所述喷出部具有多个喷嘴,各喷嘴所喷出的所述流体的扩散模式或喷出量不同。
7.如权利要求1~6中任一项所述的基板处理装置,其特征在于,包括:
壳体,与所述转台一起容纳所述基板;以及
排出部,具有设在比所述转台的上表面低的位置的排出口,在向所述喷出部供给臭氧气体时,产生使所述排出口的压力比保持在所述转台上的所述基板与所述转台之间的压力小的压力差。
8.一种基板处理方法,其特征在于,包括:
基板保持工序,利用设于转台的基板保持部,使所述基板保持为基板的处理面朝下并且水平,且处于与绕竖直轴转动自如的所述转台的上表面分离的状态;
旋转工序,使所述转台与所述基板一体旋转;以及
臭氧气体供给工序,从所述转台的中央部向旋转中的所述转台与所述基板之间喷出臭氧气体,并提供给所述处理面。
9.如权利要求8所述的基板处理方法,其特征在于,具有:
加热工序,在所述臭氧气体供给工序期间,从上方加热所述基板。
10.如权利要求8或9所述的基板处理方法,其特征在于,具有:
处理液供给工序,在所述臭氧气体供给工序之后转移至所述处理液供给工序,用于从所述转台的中央部向旋转中的所述转台与所述基板之间喷出处理液并提供给所述处理面。
11.如权利要求10所述的基板处理方法,其特征在于:
在所述处理液供给工序中,作为所述处理液,在供给用于去除微粒的化学溶液之后供给纯水。
12.如权利要求10或11所述的基板处理方法,其特征在于,具有:
冷却工序,在所述臭氧气体供给工序之后转移至所述处理液供给工序之前,使所述转台和所述基板继续旋转,并且向所述转台和所述基板之间供给冷却用气体,以对所述基板进行冷却。
13.如权利要求10~12中任一项所述的基板处理方法,其特征在于,具有:
干燥工序,在所述处理液供给工序之后,提高所述转台的转速,以使所述转台和所述基板干燥。
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