CN113272967A - 阵列基板及oled显示装置 - Google Patents
阵列基板及oled显示装置 Download PDFInfo
- Publication number
- CN113272967A CN113272967A CN201980073505.1A CN201980073505A CN113272967A CN 113272967 A CN113272967 A CN 113272967A CN 201980073505 A CN201980073505 A CN 201980073505A CN 113272967 A CN113272967 A CN 113272967A
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- semiconductor
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- thin film
- film transistor
- drain
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- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 claims abstract description 124
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 230000005611 electricity Effects 0.000 claims abstract description 10
- 230000003068 static effect Effects 0.000 claims abstract description 9
- 230000000903 blocking effect Effects 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 128
- 239000003990 capacitor Substances 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002365 hybrid physical--chemical vapour deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Abstract
本申请提出一种阵列基板及OLED显示装置，其中阵列基板包括第一薄膜晶体管(10)及第二薄膜晶体管(20)；第一薄膜晶体管(10))包括第一栅极(11)、第一半导体(12)及第一金属层(13)，第一栅极(11)与第一半导体(12)构成晶体管结构，第一金属层(13)与第一栅极(11)电连接；第二薄膜晶体管(20)包括第二栅极(21)、第二半导体(22)、第二源极(221)及第二金属层(23)，第二栅极(21)与第二半导体(22)构成晶体管结构，第二金属层(23)与第二源极(221)电连接。在第一薄膜晶体管(10)中第一栅极(11)与第一金属层(13)电连接，可增强第一薄膜晶体管(10)的电传输能力，利于静电释放，以增强基板稳定性。
Description
PCT国内申请，说明书已公开。
Claims (18)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/072678 WO2020150895A1 (zh) | 2019-01-22 | 2019-01-22 | 阵列基板及oled显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113272967A true CN113272967A (zh) | 2021-08-17 |
Family
ID=71735404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980073505.1A Pending CN113272967A (zh) | 2019-01-22 | 2019-01-22 | 阵列基板及oled显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113272967A (zh) |
| WO (1) | WO2020150895A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867854A (zh) * | 2011-07-08 | 2013-01-09 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| CN104867959A (zh) * | 2015-04-14 | 2015-08-26 | 深圳市华星光电技术有限公司 | 双栅极氧化物半导体tft基板的制作方法及其结构 |
| CN107452809A (zh) * | 2017-09-04 | 2017-12-08 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管结构及amoled驱动电路 |
| CN107623042A (zh) * | 2017-09-21 | 2018-01-23 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管结构及其制作方法 |
| CN109326609A (zh) * | 2018-09-12 | 2019-02-12 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102227474B1 (ko) * | 2013-11-05 | 2021-03-15 | 삼성디스플레이 주식회사 | 박막트랜지스터 어레이 기판, 유기발광표시장치 및 박막트랜지스터 어레이 기판의 제조 방법 |
| CN104183608B (zh) * | 2014-09-02 | 2017-05-03 | 深圳市华星光电技术有限公司 | Tft背板结构及其制作方法 |
-
2019
- 2019-01-22 WO PCT/CN2019/072678 patent/WO2020150895A1/zh active Application Filing
- 2019-01-22 CN CN201980073505.1A patent/CN113272967A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867854A (zh) * | 2011-07-08 | 2013-01-09 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| CN104867959A (zh) * | 2015-04-14 | 2015-08-26 | 深圳市华星光电技术有限公司 | 双栅极氧化物半导体tft基板的制作方法及其结构 |
| CN107452809A (zh) * | 2017-09-04 | 2017-12-08 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管结构及amoled驱动电路 |
| CN107623042A (zh) * | 2017-09-21 | 2018-01-23 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管结构及其制作方法 |
| CN109326609A (zh) * | 2018-09-12 | 2019-02-12 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020150895A1 (zh) | 2020-07-30 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20210817 |