CN113262040A - Tumor ablation equipment using ultrahigh-voltage positive-negative composite pulse electric field - Google Patents
Tumor ablation equipment using ultrahigh-voltage positive-negative composite pulse electric field Download PDFInfo
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- A61B18/04—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by heating
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- A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
- A61B18/04—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by heating
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Abstract
The invention discloses a tumor ablation device applying an ultrahigh-voltage positive-negative composite pulse electric field, which comprises a power module, a control module, a transmission circuit, an infrared recognition gesture control device and a sampling circuit, wherein the power module is connected with the control module; the control module receives signals of the infrared recognition gesture control device, the control module is respectively connected with the power supply module, the adoption circuit and the transmission circuit, and a main control chip of the control module is a chip STM32F103 VE; solves the problems that the existing tumor treatment equipment is easy to generate electric shock and inconvenient to operate, so that the treatment effect is not obvious.
Description
Technical Field
The invention relates to the field of tumor ablation, in particular to tumor ablation equipment using an ultrahigh-voltage positive and negative composite pulse electric field.
Background
Nanosecond pulsed electric fields are gaining increasing attention in the biomedical field with their unique "intracellular electric processing" effect. The intracellular electric treatment effect means that under the action of an external nanosecond pulse, a biological effect which is completely different from a microsecond pulse electroporation phenomenon appears in a cell, namely, the obvious electroporation phenomenon does not appear on the surface of a cell membrane, but a series of functional changes appear in the cell such as cell nucleus, mitochondria and the like to generate a large number of micronuclei and induce the programmed cell death, also called apoptosis. Because the tumor cells and the normal cells have different resistance values, the nanosecond pulse electric fields with different strengths are utilized to puncture the tumor cells in the clinical treatment of tumor diseases, so that the tumor cells can be killed without damaging the normal cells, and the treatment effect is good.
Therefore, tumor ablation devices have come into operation, but the existing tumor ablation devices do not notice that tumor cells may change size along with the progress of treatment, so that the set breakdown current is insufficient or too large to hurt normal cells; in addition, in the treatment process by utilizing the prior art, the muscle tremor of the patient is serious, the psychological burden of the patient is increased, the treatment is not facilitated, and the treatment effect is greatly influenced when the electricity of the equipment is applied to the affairs of doctors and patients because the existing tumor ablation technology needs a large voltage to make tumor cells die.
1) The resistance change of human cells is large and is not easy to measure. After canceration, the resistance will become large; since the resistance value becomes small after killing cancer cells, the resistance of the cancerous region is measured by applying a high-voltage composite narrow pulse.
2) The high-voltage narrow-pulse current is not easy to measure, so the sampling method of the patent is provided.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides tumor ablation equipment using an ultrahigh-voltage positive-negative composite pulse electric field, and solves the problems that the existing tumor treatment equipment is easy to generate electric shock and is inconvenient to operate, so that the treatment effect is not obvious.
The invention provides a tumor ablation device applying an ultrahigh-voltage positive-negative composite pulse electric field, which comprises a power module, a control module, a transmission circuit, an infrared recognition gesture control device and a sampling circuit, wherein the power module is connected with the control module; the control module receives signals of the infrared recognition gesture control device, the control module is respectively connected with the power supply module, the adoption circuit and the transmission circuit, and a main control chip of the control module is a chip STM32F103 VE.
Preferably, the power supply module includes a chip AMS1086, a capacitor C2, a capacitor C5, a capacitor C10, and a capacitor C12; the 1 st pin of the chip AMS1086 is connected to the ground, the 2 nd pin of the chip AMS1086 is connected to the 4 th pin of the chip AMS1086, and the 3 rd pin of the chip AMS1086 is connected to a ground capacitor C5, a ground capacitor C2 and a 5V power supply respectively.
Preferably, the transmission circuit comprises a chip SP3485E, a resistor, a triode Q1, a voltage regulator tube D2, a voltage regulator tube D3, a capacitor C17, a capacitor C18 and a 5V power supply; the resistors comprise a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13 and a resistor R14;
the 1 st pin of the chip SP3485E is connected with a resistor R12, the 2 nd pin of the chip SP3485E is respectively connected with the 3 rd pin of the chip SP3485E, the collector of the triode Q1 and one end of a resistor R10, the 4 th pin of the chip SP3485E is respectively connected with one end of a resistor R9 and one end of a resistor R11, the other end of the resistor R11 is connected with a 5V power supply,
the other end of the resistor R9 is connected with a 5V power supply, the emitter of the triode Q1 is connected with the ground, the 5 th pin of the chip SP3485E is connected with the ground, the 6 th pin of the chip SP3485E is connected with one end of the resistor R14, one end of the resistor R15, a grounded capacitor C18 and a grounded voltage regulator D3, and the 7 th pin of the chip SP3485E is respectively connected with a grounded resistor R13, the other end of the resistor R15, a grounded capacitor C17 and a grounded voltage regulator D2.
Preferably, the sampling circuit comprises an amplifier U1A, an amplifier U1B, and a current transformer TA 1; the 2 nd pin and the 4 th pin of the current transformer TA1 are both grounded, the 1 st pin of the current transformer TA1 is connected with the 3 rd pin of the amplifier U1A, the 2 nd pin of the chip U1A is connected with the 1 st pin of the chip U1A and one end of a resistor R3, the other end of the resistor R3 is connected with one end of a resistor R4 and the 5 th pin of the amplifier U1B respectively, the other end of the resistor R4 is connected with a slide rheostat RV1, the 6 th pin of the amplifier U1B is connected with the 7 th pin of the amplifier U1B and one end of the resistor R5 respectively, and the other end of the resistor R5 is connected with the 26 th pin of the chip STM32F103 VE.
Preferably, the tumor ablation apparatus using ultra-high voltage positive and negative composite pulse electric field according to claim 4, the sampling method of the sampling circuit comprises the following steps:
s1: starting to capture ADC of the 116-time chip STM32F103VE, firstly carrying out bubble sequencing on middle 50 groups of data in time sequence, and arranging the data from large to small;
s2: averaging 20 data in the middle of the sequence according to the magnitude to obtain a current pulse sampling value;
s3: calculating actual current after calibration according to the ratio of the internal ADC sampling value in the chip STM32F103VE to the actual current;
s4: the ADC sampling voltage in the chip STM32F103VE is 0-3.3V, and when the current is 0 without a signal, the PC1 needs to be adjusted to 1.65V by using RV 1;
s5: 100ma, 25.5 ohm theoretical sampling resistance, 3.30V + 2 voltage at PC3 of chip STM32F103VE, 3.3V maximum sampling voltage, and 64.7A maximum pulse current 3300/51.
Compared with the prior art, the invention has the beneficial effects that:
1. in the clinical treatment of tumor diseases, nanosecond pulsed electric fields with different intensities are utilized to puncture tumor cells, so that the tumor cells can be killed without damaging normal cells, and the treatment effect is good.
2. In the treatment process by utilizing the prior art, the muscle tremor of a patient is serious, the psychological burden of the patient is increased, the treatment is not facilitated, and the tumor cell apoptosis is caused by the large voltage required by the existing tumor ablation technology, so that the treatment effect is greatly influenced when the electricity of the equipment is transmitted to doctors and the patient.
Drawings
Fig. 1 is a general block diagram of the present invention.
Fig. 2 is a control block diagram of the present invention.
Fig. 3 is a sampling circuit diagram of the present invention.
Fig. 4 is a power supply block diagram of the present invention.
Detailed Description
The invention is further described with reference to the following drawings and detailed description.
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1, a tumor ablation apparatus using an ultra-high voltage positive-negative composite pulse electric field comprises a power module, a control module, a transmission circuit, an infrared recognition gesture control device and a sampling circuit; the control module receives signals of the infrared recognition gesture control device, the control module is respectively connected with the power supply module, the adoption circuit and the transmission circuit, and as shown in fig. 2, a main control chip of the control module is a chip STM32F103 VE.
As shown in fig. 4, the power supply module includes a chip AMS1086, a capacitor C2, a capacitor C5, a capacitor C10, and a capacitor C12; the 1 st pin of the chip AMS1086 is connected to the ground, the 2 nd pin of the chip AMS1086 is connected to the 4 th pin of the chip AMS1086, and the 3 rd pin of the chip AMS1086 is connected to a ground capacitor C5, a ground capacitor C2 and a 5V power supply respectively.
The transmission circuit comprises a chip SP3485E, a resistor, a triode Q1, a voltage regulator tube D2, a voltage regulator tube D3, a capacitor C17, a capacitor C18 and a 5V power supply; the resistors comprise a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13 and a resistor R14;
the 1 st pin of the chip SP3485E is connected with a resistor R12, the 2 nd pin of the chip SP3485E is respectively connected with the 3 rd pin of the chip SP3485E, the collector of the triode Q1 and one end of a resistor R10, the 4 th pin of the chip SP3485E is respectively connected with one end of a resistor R9 and one end of a resistor R11, the other end of the resistor R11 is connected with a 5V power supply,
the other end of the resistor R9 is connected with a 5V power supply, the emitter of the triode Q1 is connected with the ground, the 5 th pin of the chip SP3485E is connected with the ground, the 6 th pin of the chip SP3485E is connected with one end of the resistor R14, one end of the resistor R15, a grounded capacitor C18 and a grounded voltage regulator D3, and the 7 th pin of the chip SP3485E is respectively connected with a grounded resistor R13, the other end of the resistor R15, a grounded capacitor C17 and a grounded voltage regulator D2.
As shown in fig. 3, the sampling circuit includes an amplifier U1A, an amplifier U1B, and a current transformer TA 1; the 2 nd pin and the 4 th pin of the current transformer TA1 are both grounded, the 1 st pin of the current transformer TA1 is connected with the 3 rd pin of the amplifier U1A, the 2 nd pin of the chip U1A is connected with the 1 st pin of the chip U1A and one end of a resistor R3, the other end of the resistor R3 is connected with one end of a resistor R4 and the 5 th pin of the amplifier U1B respectively, the other end of the resistor R4 is connected with a slide rheostat RV1, the 6 th pin of the amplifier U1B is connected with the 7 th pin of the amplifier U1B and one end of the resistor R5 respectively, and the other end of the resistor R5 is connected with the 26 th pin of the chip STM32F103 VE.
In the implementation of the embodiment, R1 and R2 in the sampling circuit sample resistors and UIA voltage followers (also called emitter followers, which play the roles of buffering, isolating and improving the carrying capacity). UIB DC bias (changing AC signal to 0-5V signal), changing the resistance of RV1 can change the position of 0 potential, and R3, R4, R5 current-limiting resistors.
The pulse width is 100us, and the sampling precision of the singlechip STM32F429VET6 is 12 bits of sampling rate 1.1667M.
The effective sampling in the period of 100us of pulse width is 116 times, the singlechip starts ADC sampling when OPT2 is a trigger signal, ADC sampling is started to capture 116 times, firstly, 50 groups of data in the middle of time sequence are bubbled and sorted from large to small. And averaging the middle 20 data according to the size sequence to obtain a current pulse sampling value. And calculating and calibrating the actual current according to the ratio of the ADC sampling value to the actual current.
ADC sampling voltage in the single chip microcomputer is 0-3.3V, and when current is 0 without a signal, the PC1 needs to be adjusted to 1.65V by RV 1.
TAK17-05 high frequency pulse current transformer 50A:100ma, theoretical sampling resistance 25.5 ohm. The voltage at PC3 ═ 3.30V + sample voltage)/2. Maximum sampling voltage 3.3V, maximum pulse current 3300/51 ═ 64.7A
In the implementation of the embodiment, the design of the ultrahigh voltage positive and negative composite pulse electric field generation circuit
Positive and negative compound pulse electric field of superhigh pressure generates circuit relates to high-voltage pulse treatment field, and the circuit includes: the power supply module is used for providing positive and negative power supplies, the electric field generation module is used for increasing the power supply voltage to 3000V to provide positive and negative 3000V bipolar voltage to reduce muscle tremor, the interface circuit is connected with external detection equipment, the control module is used for collecting and processing real-time data, and a driving signal is generated to drive the electric field generation module to operate. Can solve the problems of inaccurate treatment of tumor cells and serious muscle tremor in the prior tumor treatment technology, and further improves the treatment efficiency of the tumor cells.
Characteristic of the technology
Positive negative compound pulse electric field of superhigh pressure generates circuit, the circuit includes:
a power supply module: the power supply module is used for providing positive and negative working voltages for the circuit;
an electric field generation module: the electric field generation module is connected with the power supply module, is used for converting power supply voltage into ultrahigh-voltage treatment voltage and providing positive and negative composite pulses, and the output end of the electric field generation module is provided with a plurality of probe interfaces;
a drive circuit: the driving circuit is connected with the electric field generation module and used for receiving a driving signal and driving the electric field generation module to work according to the driving signal;
a control module: the control module is connected with the drive circuit and used for generating a drive signal according to clinical data so as to control the drive circuit to work;
an interface circuit: the interface circuit is connected with the control module and used for receiving clinical data and sending the clinical data to the control module.
Design of infrared recognition gesture control device
Functional requirements
The infrared recognition gesture control method, device and system utilize an infrared emitter to emit infrared rays to sense the action of hands; the infrared receiver receives the reflected infrared rays and sends the received infrared rays to the signal processor; the signal processor judges gesture actions according to the reflected infrared intensity, sends gesture instructions to the central processing unit, and the central processing unit outputs corresponding control instructions according to different gesture instructions; the pulse generator receives the control instruction and outputs pulse current with corresponding intensity; the electrode needle is connected with the pulse generator, receives pulse current and carries out discharge treatment on the tumor. Solves the problems that the pulse current of the existing operation electrode needle is slow in regulating speed and the regulating process is easy to cause infection of patients.
Characteristic of the technology
Infrared identification gesture control method
The infrared emitter emits infrared rays to sense the motion of the hand;
the infrared receiver receives the reflected infrared rays and sends the received infrared rays to the signal processor;
the signal processor judges gesture actions according to the reflected infrared intensity, sends gesture instructions to the central processing unit, and the central processing unit outputs corresponding control instructions according to different gesture instructions;
the pulse generator receives the control instruction and outputs pulse current with corresponding intensity;
the electrode needle is connected with the pulse generator, receives pulse current and carries out discharge treatment on the tumor.
A computer readable storage medium having one or more program instructions embodied therein for performing the method of any one of the above by an infrared recognition gesture control system.
Tumor ablation equipment applying ultrahigh-voltage positive-negative composite pulse electric field
Functional requirements
Tumor ablation equipment using an ultrahigh-pressure positive-negative composite pulse electric field relates to the field of tumor treatment equipment, and comprises: the interaction device sends out a control instruction through gesture control; the host computer is electrically connected with the interactive device and is used for collecting and processing real-time data required by the operation, generating a control instruction and controlling the internal circuit to generate an ultrahigh voltage positive and negative composite pulse electric field; the probe is connected with a probe interface of the host, only one of the electric polarities of the probe interface is negative, and the rest electric polarities of the probe interface are positive, and the probe acts on the tumor cells. This equipment can solve current tumour treatment equipment and easily take place to electrocute, and the inconvenient problem that leads to treatment effect obscure of operation. The probe design of one negative five positive is adopted, the infrared gesture control technology is applied, safety and sterility are achieved, the operation environment of the operation is guaranteed, and the treatment efficiency is improved.
Characteristic of the technology
The tumor ablation equipment using the ultrahigh-voltage positive-negative composite pulse electric field comprises the following units and characteristics:
the interaction device comprises a data screen and an operation screen, wherein the data screen is used for displaying real-time data required by the operation, the operation screen is used for displaying a real-time picture of a surgical scalpel part, and the operation screen is provided with a gesture control module;
the host computer is electrically connected with the interactive device and is used for collecting and processing real-time data required by the operation, generating a control instruction and controlling the internal circuit to generate an ultrahigh voltage positive and negative composite pulse electric field;
the probe is connected with a probe interface of the host, only one of the electric polarities of the probe interface is negative, and the rest electric polarities of the probe interface are positive, and the probe acts on the tumor cells.
System components and structures
System components
The standard configuration is shown in Table 1
TABLE 1
| Serial number | Name of accessory | Number of | Remarks for |
| 1 | Main unit (Generator) | 1 table | |
| 2 | Operation table | 1 is provided with | |
| 3 | |
2 table | |
| 4 | Power |
1 is provided with | |
| 5 | |
1 is provided with | |
| 6 | Disposable |
6 are | |
| 7 | |
1 is provided with | |
| 8 | Operation software of composite pulse electric field |
1 set of | |
| 9 | Computer planning treatment software of composite pulse electric field |
1 set of | |
| 10 | User manual of composite pulse electric field |
1 |
|
| 11 | |
1 set of |
The system accessories comprise a power cable, a grounding wire, communication cables of all subsystems, an external wire or pipe fixing plate and an electrocardiograph
System architecture
The composite pulsed electric field tumor ablation system utilizes disposable electrodes to deliver energy from a generator to an ablation target. The structure comprises the following steps: LCD display, control panel and keyboard, power supply unit and power cord double-triggering foot switch/foot pedal, electrocardiograph.
Claims (5)
1. A tumor ablation device applying an ultrahigh-voltage positive-negative composite pulse electric field is characterized by comprising a power supply module, a control module, a transmission circuit, an infrared recognition gesture control device and a sampling circuit; control module receives infrared recognition gesture controlling means's signal, control module connects power module, adopts circuit and transmission circuit respectively, control module's main control chip is chip STM32F103 VE.
2. The tumor ablation device applying the ultrahigh-voltage positive-negative composite pulsed electric field according to claim 1, wherein the power supply module comprises a chip AMS1086, a capacitor C2, a capacitor C5, a capacitor C10 and a capacitor C12; the 1 st pin of the chip AMS1086 is connected to the ground, the 2 nd pin of the chip AMS1086 is connected to the 4 th pin of the chip AMS1086, and the 3 rd pin of the chip AMS1086 is respectively connected to a ground capacitor C5, a ground capacitor C2 and a 5V power supply.
3. The tumor ablation apparatus applying the ultrahigh-voltage positive-negative composite pulse electric field according to claim 1, wherein the transmission circuit comprises a chip SP3485E, a resistor, a triode Q1, a voltage regulator tube D2, a voltage regulator tube D3, a capacitor C17, a capacitor C18 and a 5V power supply; the resistors comprise a resistor R9, a resistor R10, a resistor R11, a resistor R12, a resistor R13 and a resistor R14;
a1 st pin of the chip SP3485E is connected to the resistor R12, a 2 nd pin of the chip SP3485E is connected to a 3 rd pin of the chip SP3485E, a collector of the triode Q1 and one end of the resistor R10, a 4 th pin of the chip SP3485E is connected to one end of the resistor R9 and one end of the resistor R11, the other end of the resistor R11 is connected to the 5V power supply, the other end of the resistor R9 is connected to the 5V power supply, an emitter of the triode Q1 is connected to ground, a 5 th pin of the chip SP3485E is connected to ground, a 6 th pin of the chip SP3485E is connected to one end of the resistor R14, one end of the resistor R15, the ground capacitor C18 and the ground regulator D3, and a 7 th pin of the chip SP3485E is connected to the ground resistor R13, the other end of the resistor R15, the ground capacitor C17 and the ground regulator D2.
4. The tumor ablation apparatus applying the ultrahigh-voltage positive-negative composite pulsed electric field according to claim 1, wherein the sampling circuit comprises an amplifier U1A, an amplifier U1B and a current transformer TA 1; the 2 nd pin and the 4 th pin of the current transformer TA1 are both grounded, the 1 st pin of the current transformer TA1 is connected with the 3 rd pin of the amplifier U1A, the 2 nd pin of the chip U1A is connected with the 1 st pin of the chip U1A and one end of a resistor R3, the other end of the resistor R3 is connected with one end of a resistor R4 and the 5 th pin of the amplifier U1B, the other end of the resistor R4 is connected with a slide rheostat RV1, the 6 th pin of the amplifier U1B is connected with the 7 th pin of the amplifier U1B and one end of a resistor R5, and the other end of the resistor R5 is connected with the 26 th pin of the chip STM32F103 VE.
5. The tumor ablation apparatus using ultra-high voltage positive and negative composite pulse electric field according to claim 4, wherein the sampling method of the sampling circuit comprises the following steps:
s1: starting to capture ADC of the 116-time chip STM32F103VE, firstly carrying out bubble sequencing on middle 50 groups of data in time sequence, and arranging the data from large to small;
s2: averaging 20 data in the middle of the sequence according to the magnitude to obtain a current pulse sampling value;
s3: calculating actual current after calibration according to the ratio of the internal ADC sampling value in the chip STM32F103VE to the actual current;
s4: the ADC sampling voltage in the chip STM32F103VE is 0-3.3V, and when the current is 0 without a signal, the PC1 needs to be adjusted to 1.65V by using RV 1;
s5: 100ma, 25.5 ohm theoretical sampling resistance, 3.30V + 2 voltage at PC3 of chip STM32F103VE, 3.3V maximum sampling voltage, and 64.7A maximum pulse current 3300/51.
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| CN115089188A (en) * | 2022-06-09 | 2022-09-23 | 北京三春晖医疗器械有限公司 | Current detection circuit and integrated circuit |
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Application publication date: 20210817 |