CN113257761A - 一种倒装焊器件主动式散热结构及互联方法 - Google Patents
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Abstract
一种倒装焊器件主动式散热结构及互联方法,主动式散热结构包括封装基板、倒装芯片、电互联材料、电互连材料、底部填充胶、散热片、散热装置,电互联材料设置于倒装芯片正面,倒装芯片倒装于封装基板上,通过底部填充胶粘接固定,散热装置底部中心区域通过散热片与倒装芯片相连,倒装芯片四周通过电互连材料与封装基板相连,并通过底部填充胶固定,互联方法采用主动散热方式,无需额外辅助散热,散热效率高,能够优化芯片工作温度环境,提高芯片使用寿命。
Description
技术领域
本发明涉及一种倒装焊器件主动式散热结构及互联方法,属于半导体封装技术领域。
背景技术
随着FPGA、SoC、CPU和DSP等超大规模集成电路向高速、高密度、高性能方向发展,器件功耗的不断提升使热管理成为封装过程重点考虑的技术环节。目前常见高性能集成电路均采用非气密倒装焊封装结构,芯片通过焊料凸点与封装基板进行倒装互联,随后在芯片背面采用导热胶粘接热沉,芯片产生的热量通过芯片背面-导热胶-热沉的路径传导至环境中,并通过增加热沉面积来提升电路的散热性能。采用这种结构主要存在以下不足:
(1)芯片产生的热量主要通过导热胶粘接的热沉散出,但由于导热胶的热导率通常小于10W/mK,与金属类材料的热导率相差一个数量级,热量难以有效传导至热沉,导致结壳热阻大,热量无法及时散出;
(2)该散热方法为被动散热,热沉表面热量仅能通过热传导或热辐射方式向地面空气或真空环境散热,散热效率低,易造成较高结温而影响芯片性能。
(3)通常会通过增加热沉的面积来提升电路的散热性能,热沉面积增大后,当热沉表面受到外力时,在热沉与芯片边角的接触位置会产生应力点,极易在应力点处产生散热片断裂;
(4)热沉面积增大至与基板尺寸相近后,在进行电路电性能测试时,测试插座直接夹持在热沉表面,压力通过热沉传导至芯片,可能使原断路的凸点在压力作用下临时导通,影响电路测试的有效性;
(5)常规热沉为AlSiC材质,与Si基芯片存在严重热适配问题,在经历高温存储或温度循环等长期服役环境下有芯片与热沉粘接断层风险;
发明内容
本发明解决的技术问题是:针对目前现有技术中,被动式热沉散热效率低、阻碍芯片热量传导造成较高的结温进而影响芯片性能发挥的问题,提出了一种倒装焊器件主动式散热结构及互联方法。
本发明解决上述技术问题是通过如下技术方案予以实现的:
一种倒装焊器件主动式散热结构,包括封装基板、倒装芯片、电互联材料、电互连材料、底部填充胶、散热片、散热装置,所述电互联材料设置于倒装芯片正面,倒装芯片倒装于封装基板上,通过底部填充胶粘接固定,散热装置底部中心区域通过散热片与倒装芯片相连,倒装芯片四周通过电互连材料与封装基板相连,并通过底部填充胶固定。
所述散热装置为热电制冷散热装置,包括冷端模块、PN型半导体、热端模块,冷端模块、热端模块为氧化硅衬底,冷端模块、热端模块间有n个N型半导体片、n个P型半导体片,n的取值由实际情况决定。
所述散热装置底部四周设有焊盘,焊盘与P型半导体片或N型半导体片一一对应。
所述散热装置顶端、底端的焊盘通过通孔金属与P型半导体片或N型半导体片相连,其余焊盘为支撑焊盘。
所述散热装置通过电互连材料由封装基板供电,包括独立供电PN链路,每条链路可单独设置电流电压,通电后散热装置冷端模块开始主动制冷。
所述散热装置顶部表面涂有热辐射散热纳米涂层。
所述散热装置底部中心区域表面为镍金金属化层。
所述散热片为AuSn或PbSn或BiSn或SnAgCu预成型焊片。9、根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述封装基板为Al2O3高温陶瓷基板或LTCC低温陶瓷基板或塑封基板。
所述电互联材料为SnAg球或SnPb球或Cu柱或金凸块。
所述电互连材料为SnAg球或SnPb球或铜核球或塑核球,电互连材料高度为散热片、倒装芯片、电互联材料连接后高度之和。
所述封装基板、倒装芯片、散热装置之间构成的空腔内填充有底部填充胶,底部填充胶为环氧树脂。
一种倒装焊器件主动式散热结构的互联方法,步骤如下:
(1)取用一套倒装焊封装用的封装基板,将正面植有电互联材料的倒装芯片倒装在封装基板上;
(2)将散热片居中贴放在倒装芯片表面,将电互连材料采用激光植球方式焊接于散热装置底部焊盘上;
(3)将正面植有电互连材料的散热装置倒装贴放在倒装芯片上;
(4)采用热压焊接方式作用于散装装置表面,完成散热装置、散热片、倒装芯片、电互连材料、封装基板间的焊接互连;
(5)将底部填充胶填充于封装基板、倒装芯片、散热装置间的空腔内。
所述散热装置底面中心区域与倒装芯片表面进行镀镍处理,镀镍处理中,镍层厚度8~10um,镍层表面镀金,金层厚度0.5~1um,散热装置底部中心区域镀层面积等于倒装芯片面积。
所述散热装置四周设置有焊盘,焊盘表层为NiAu镀层,镍层厚度8~10um,镀金厚度为0.5~1um,焊盘直径为150um。
所述电互连材料通过激光熔球的方式焊接于散热装置四周设置的焊盘上。
所述散热片贴放于倒装芯片表面,将正面植有电互连材料的散热装置对准封装基板焊盘放置,通过热压焊方法实现同时连接。
本发明与现有技术相比的优点在于:
(1)本发明提供的一种倒装焊器件主动式散热结构及互联方法,采用主动式散热结构替代被动式热沉散热,通过对散热装置通电产生热电制冷效果,大幅降低芯片温度,提升电路的散热性能,延长芯片的使用寿命,同时通过主动式散热结构,散装装置采用与芯片一体化供电方式,直接从封装基板供电,无需外引出供电,形成整个封装体,且封装后器件装机后无需额外辅助散热,有效减小装机占用容量;
(2)本发明采用散热装置的中心区域通过散热片与芯片连接,四周通过电互连材料与封装基板互连,在实现通电制冷的效果同时,将背面收到的外力分散传导至基板,避免芯片受力,解决了测试时散热片受到压力导致倒装焊点临时导通影响测试有效性的问题;
(3)本发明采用主动式散热装置的尺寸在二维空间上具有较强的灵活性,与不断增加的热沉尺寸相比,本发明散热装置仅需要比芯片尺寸面积略大即可,进一步缩小了电路封装尺寸,散热装置较热沉面积小,缓解了与芯片边角的接触位置会产生的应力,解决了应力点处热沉断裂问题;
(4)本发明散热装置为硅基衬底,与硅基芯片CTE相同,解决了AlSiC热沉与芯片热失配问题,同时采用热导率更高的预成型焊片替代导热胶,进一步提升电路的散热性能,封装基板、倒装芯片和散热装置之间构成的空腔内采用底部填充胶整体填充,进一步提高了倒装焊器件的封装可靠性。
附图说明
图1为发明提供的实施例倒装焊封装散热结构示意图;
图2为发明提供的实施例散热装置结构示意图;
图3为发明提供的倒装焊主动式散热结构互联方法实施示意图;
具体实施方式
一种倒装焊器件主动式散热结构及互联方法,采用主动散热方式,无需额外辅助散热,散热效率高,能够优化芯片工作温度环境,提高芯片使用寿命,有效的解决了现有散热效率低、阻碍芯片热量传导造成较高的结温进而影响芯片性能发挥的问题,倒装焊器件主动式散热结构具体为:
包括封装基板、倒装芯片、电互联材料、电互连材料、底部填充胶、散热片、散热装置,所述电互联材料设置于倒装芯片正面,倒装芯片倒装于封装基板上,通过底部填充胶粘接固定,散热装置底部中心区域通过散热片与倒装芯片相连,倒装芯片四周通过电互连材料与封装基板相连,并通过底部填充胶固定,其中:
封装基板为Al2O3高温陶瓷基板或LTCC低温陶瓷基板或塑封基板;
电互联材料为SnAg球或SnPb球或Cu柱或金凸块;
电互连材料为SnAg球或SnPb球或铜核球或塑核球,电互连材料高度为散热片、倒装芯片、电互联材料连接后高度之和;
散热装置为热电制冷散热装置,包括冷端模块、PN型半导体、热端模块,冷端模块、热端模块为氧化硅衬底,冷端模块、热端模块间有n个N型半导体片、n个P型半导体片,n的取值由实际情况决定;
散热装置底部四周设有焊盘,焊盘与P型半导体片或N型半导体片一一对应;散热装置顶端、底端的焊盘通过通孔金属与P型半导体片或N型半导体片相连,其余焊盘为支撑焊盘;
散热装置通过电互连材料由封装基板供电,包括独立供电PN链路,每条链路可单独设置电流电压;散热装置顶部表面涂有热辐射散热纳米涂层;散热装置底部中心区域表面为镍金金属化层;
散热片为AuSn或PbSn或BiSn或SnAgCu预成型焊片;封装基板、倒装芯片、散热装置之间构成的空腔内填充有底部填充胶,底部填充胶为环氧树脂。
一种倒装焊器件主动式散热结构的互联方法,具体步骤包括:
(1)取用一套倒装焊封装用的封装基板,将正面植有电互联材料的倒装芯片倒装在封装基板上;
(2)将散热片居中贴放在倒装芯片表面,将电互连材料采用激光植球方式焊接于散热装置底部焊盘上;
(3)将正面植有电互连材料的散热装置倒装贴放在倒装芯片上;
(4)采用热压焊接方式作用于散装装置表面,完成散热装置、散热片、倒装芯片、电互连材料、封装基板间的焊接互连;
(5)将底部填充胶填充于封装基板、倒装芯片、散热装置间的空腔内。
其中,散热装置底面中心区域与倒装芯片表面进行镀镍处理,镀镍处理中,镍层厚度8~10um,镍层表面镀金,金层厚度0.5~1um,散热装置底部中心区域镀层面积等于倒装芯片面积;
散热装置四周设置有焊盘,焊盘表层为NiAu镀层,镍层厚度8~10um,镀金厚度为0.5~1um,焊盘直径为150um;
电互连材料通过激光熔球的方式焊接于散热装置四周设置的焊盘上;
散热片贴放于倒装芯片表面,将正面植有电互连材料的散热装置对准封装基板焊盘放置,通过热压焊方法实现同时连接。
下面结合具体实施例进行进一步说明:
在本实施例中,针对现有采用热沉的被动式散热结构的热导率低,散热效果差造成芯片结温高进而影响器件性能问题,提供了一种倒装焊主动式散热结构及互联方法,如图1所示,倒装焊散热结构,包括封装基板1、倒装芯片2、电互联材料3、电互连材料4、底部填充胶5、散热片6、散热装置7;所述倒装芯片2正面植有电互联材料3,并倒装于所述封装基板1上,通过底部填充胶5粘接固定;所述散热装置,底部中心区域通过散热片6与倒装芯片2相连,四周通过电互连材料4与封装基板1相连,通过底部填充胶5粘接固定。
如图2所示,散热装置7为热电制冷散热装置,主要为冷端模块-PN型半导体-热端模块,总体厚度为400um,冷端模块和热端模块为硅衬底模块,厚度分别为150um,底部中心区域为芯片面积大小的镍金镀层。四周有1~2圈若干镍金焊盘,焊盘大小为150um。边缘焊盘为电源焊盘,其余为支撑焊盘。每列PN为独立供电。
倒装焊封装主动式散热结构的互联方法的具体步骤如下:
第一步,取一片倒装焊封装的基板1,在该基板上制备有倒装芯片用和散热装置用两种传输焊盘,图3(a)为倒装焊散热结构互联方法实施第一步后的示意图;
优选地,所述倒装焊封装为非气密封装结构,所述倒装焊封装用基板为Al2O3高温陶瓷基板、LTCC低温陶瓷基板或塑封基板。
第二步,将正面植有电互联材料3的倒装芯片2倒装在封装基板1上,随后对倒装焊后的芯片与基板中间注入底部填充胶5。图3(b)为倒装焊主动式散热结构互联方法实施第二步后的示意图;
第三步,将散热装置7底部中心区域与焊盘进行镀镍金处理,镍层厚度8~10um,金层厚度0.5~1um。随后采用激光熔球的方式将电互连材料4焊接在散热装置7底部焊盘上。图3(c)为倒装焊主动式散热结构的互联方法实施第三步后的示意图;
第四步,将散热片6平铺于倒装芯片2表面,将正面植好电互连材料4的散热装置7倒装于实施第二步形成结构上,通过回流方式形成良好焊接,并随后对倒装焊后的散热装置7和封装基板1中间注入底部填充胶5。图3(d)为倒装焊主动式散热结构的互联方法实施第四步后的示意图;
优选地,所述散热片6为AuSn、PbSn、BiSn或SnAgCu预成型焊片,厚度为20~30um,长宽尺寸分别小于芯片1mm。
优选地,所述散热片6与倒装芯片2、散热装置7通过真空回流焊、热风回流焊或热压焊方法连接。
其中,本发明的倒装焊主动式散热结构及互联方法,采用主动式散热结构替代被动式热沉散热,通过对散热装置通电产生热电制冷效果,大幅降低芯片温度,提升电路的散热性能,延长芯片的使用寿命,封装后器件装机后外无需额外辅助散热,有效减小装机占用容量。中心区域通过散热片与芯片连接,四周通过电互连材料与封装基板互连,在实现通电制冷的效果同时,将背面收到的外力分散传导至基板,避免芯片受力,解决了测试时散热片受到压力导致倒装焊点临时导通影响测试有效性的问题。同时,散热装置采用硅基衬底,与芯片材质CTE相同,解决了热沉与芯片热失配问题。
以上所述仅为本发明的优选实施例,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。本发明说明书中未作详细描述的内容属本领域技术人员的公知技术。
Claims (17)
1.一种倒装焊器件主动式散热结构,其特征在于:包括封装基板、倒装芯片、电互联材料、电互连材料、底部填充胶、散热片、散热装置,所述电互联材料设置于倒装芯片正面,倒装芯片倒装于封装基板上,通过底部填充胶粘接固定,散热装置底部中心区域通过散热片与倒装芯片相连,倒装芯片四周通过电互连材料与封装基板相连,并通过底部填充胶固定。
2.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热装置为热电制冷散热装置,包括冷端模块、PN型半导体、热端模块,冷端模块、热端模块为氧化硅衬底,冷端模块、热端模块间有n个N型半导体片、n个P型半导体片,n的取值由实际情况决定。
3.根据权利要求5所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热装置底部四周设有焊盘,焊盘与P型半导体片或N型半导体片一一对应。
4.根据权利要求5所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热装置顶端、底端的焊盘通过通孔金属与P型半导体片或N型半导体片相连,其余焊盘为支撑焊盘。
5.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热装置通过电互连材料由封装基板供电,包括独立供电PN链路,每条链路可单独设置电流电压,通电后散热装置冷端模块开始主动制冷。
6.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热装置顶部表面涂有热辐射散热纳米涂层。
7.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热装置底部中心区域表面为镍金金属化层。
8.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述散热片为AuSn或PbSn或BiSn或SnAgCu预成型焊片。
9.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述封装基板为Al2O3高温陶瓷基板或LTCC低温陶瓷基板或塑封基板。
10.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述电互联材料为SnAg球或SnPb球或Cu柱或金凸块。
11.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述电互连材料为SnAg球或SnPb球或铜核球或塑核球,电互连材料高度为散热片、倒装芯片、电互联材料连接后高度之和。
12.根据权利要求1所述的一种倒装焊器件主动式散热结构,其特征在于:
所述封装基板、倒装芯片、散热装置之间构成的空腔内填充有底部填充胶,底部填充胶为环氧树脂。
13.一种倒装焊器件主动式散热结构的互联方法,其特征在于步骤如下:
(1)取用一套倒装焊封装用的封装基板,将正面植有电互联材料的倒装芯片倒装在封装基板上;
(2)将散热片居中贴放在倒装芯片表面,将电互连材料采用激光植球方式焊接于散热装置底部焊盘上;
(3)将正面植有电互连材料的散热装置倒装贴放在倒装芯片上;
(4)采用热压焊接方式作用于散装装置表面,完成散热装置、散热片、倒装芯片、电互连材料、封装基板间的焊接互连;
(5)将底部填充胶填充于封装基板、倒装芯片、散热装置间的空腔内。
14.根据权利要求13所述的一种倒装焊器件主动式散热结构的互联方法,其特征在于:
所述散热装置底面中心区域与倒装芯片表面进行镀镍处理,镀镍处理中,镍层厚度8~10um,镍层表面镀金,金层厚度0.5~1um,散热装置底部中心区域镀层面积等于倒装芯片面积。
15.根据权利要求13所述的一种倒装焊器件主动式散热结构的互联方法,其特征在于:
所述散热装置四周设置有焊盘,焊盘表层为NiAu镀层,镍层厚度8~10um,镀金厚度为0.5~1um,焊盘直径为150um。
16.根据权利要求13所述的一种倒装焊器件主动式散热结构的互联方法,其特征在于:
所述电互连材料通过激光熔球的方式焊接于散热装置四周设置的焊盘上。
17.根据权利要求13所述的一种倒装焊器件主动式散热结构的互联方法,其特征在于:
所述散热片贴放于倒装芯片表面,将正面植有电互连材料的散热装置对准封装基板焊盘放置,通过热压焊方法实现同时连接。
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