KR20030021895A - 열 방출판이 부착된 플립칩 패키지 제조 방법 - Google Patents
열 방출판이 부착된 플립칩 패키지 제조 방법 Download PDFInfo
- Publication number
- KR20030021895A KR20030021895A KR1020010055454A KR20010055454A KR20030021895A KR 20030021895 A KR20030021895 A KR 20030021895A KR 1020010055454 A KR1020010055454 A KR 1020010055454A KR 20010055454 A KR20010055454 A KR 20010055454A KR 20030021895 A KR20030021895 A KR 20030021895A
- Authority
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- South Korea
- Prior art keywords
- substrate
- heat dissipation
- chip
- dissipation plate
- semiconductor
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 230000004907 flux Effects 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000005476 soldering Methods 0.000 claims abstract description 21
- 239000000945 filler Substances 0.000 claims abstract description 6
- 230000017525 heat dissipation Effects 0.000 claims description 66
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000013013 elastic material Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910020816 Sn Pb Inorganic materials 0.000 claims description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 claims description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910000962 AlSiC Inorganic materials 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 claims 1
- 238000005452 bending Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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Abstract
Description
Claims (22)
- 플립칩 패키지를 제조하는 방법으로서,i) 복수의 전극 패드가 형성된 활성면을 갖는 반도체 IC 칩을 준비하는 단계,ii) 상기 복수의 전극 패드에 복수의 금속 범프를 형성하는 단계,iii) 열 인터페이스 재료(TIM)를 사용하여 상기 반도체 IC 칩의 상기 활성면 반대쪽에 있는 밑면에 열 방출판을 부착하는 단계,iv) 상기 전극 패드와 대응하는 복수의 랜드 패드가 형성된 기판에 플럭스 충전층(flux filler layer)을 형성하는 단계,v) 상기 반도체 IC 칩을 활성면이 상기 기판을 향하도록 실장하는데, 상기 복수의 금속 범프가 상기 복수의 랜드 패드에 닿도록 실장하는 단계,vi) 상기 금속 범프를 솔더링하여 랜드 패드와 금속 범프에 의한 전기 접속부를 형성하는 단계를 포함하며,상기 플럭스 충전층은 상기 전기 접속부를 형성하는 솔더링 과정에서 플럭스 역할을 하는 물질과 언더필 재료를 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 플립칩 패키지를 제조하는 방법으로서,i) 복수의 전극 패드가 형성된 활성면을 갖는 반도체 IC 칩을 준비하는 단계,ii) 상기 복수의 전극 패드에 복수의 금속 범프를 형성하는 단계,iii) 열 인터페이스 재료(TIM)를 사용하여 상기 반도체 IC 칩의 상기 활성면 반대쪽에 있는 밑면에 열 방출판을 부착하는 단계,iv) 상기 전극 패드와 대응하는 복수의 랜드 패드가 형성된 기판에 플럭스 충전층(flux filler layer)을 형성하는 단계,v) 상기 반도체 IC 칩을 활성면이 상기 기판을 향하도록 실장하는데, 상기 복수의 금속 범프가 상기 복수의 랜드 패드에 닿도록 실장하는 단계,vi) 상기 금속 범프를 솔더링하여 랜드 패드와 금속 범프에 의한 전기 접속부를 형성하는 단계를 포함하며,상기 플럭스 충전층은 상기 전기 접속부를 형성하는 솔더링 과정에서 플럭스 역할을 하는 물질과 언더필 재료를 포함하고, 상기 열 방출판은 둘레 테두리에 상기 기판을 향해 구부러진 다리부를 포함하는 밀봉형 열 방출판이며, 상기 전기 접속부 형성 단계는 상기 밀봉형 열 방출판의 다리부와 기판을 밀봉접합하는 단계를 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 열 방출판 부착 단계는 수소 분위기에서 상기 TIM을 솔더링하는 단계인 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 열 방출판을 부착하기 전의 상기 반도체 IC 칩의 밑면에는 크롬, 티타늄, 구리/니켈바나듐/금, 은을 포함하는 군에서 선택된 금속층이 형성되어 있는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 금속 범프는 주석-납(Sn-Pb) 합금, 은(Ag)이 첨가된 주석-납 합금, 은이 첨가된 금(Au), 은이 첨가된 니켈(Ni)로 구성된 군에서 선택되는 금속으로 이루어진 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 열 방출판 부착 단계는 솔더 TIM을 디스펜싱 공정으로 상기 반도체 IC 칩의 밑면에 시트 모양으로 도포하는 단계를 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 TIM은 주석-납 합금이나 은이 첨가된 주석-납 합금으로 이루어진 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 열 방출판은 구리(Cu), 알루미늄(Al), 탄화규소 알루미늄(AlSiC), 텅스텐구리(CuW), 다이아몬드로 구성된 군으로부터 선택되는 재료로 이루어진 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 열 방출판은 사각형 단면을 갖는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 언더필 층 형성 단계는 액상 수지 또는 판상 수지를 스텐실이나 디스펜싱 공정으로 상기 기판의 면에 도포하는 단계를 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 랜드 패드는 니켈(Ni), 니켈/금(Ni/Au), 팔라듐(Pd), 은(Ag), 솔더로 구성된 군으로부터 선택되는 금속으로 표면처리되어 있는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 언더필 층을 형성하는 단계 전에 상기 기판의 랜드 패드에 저융점 솔더를 미리 도포하는 단계를 더 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항 또는 제2항에서,상기 기판은 정렬키를 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제2항에서,상기 밀봉접합 단계는 연성 실리콘 베이스 밀봉제 또는 경성 에폭시 밀봉제를 사용하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제1항에서,상기 기판에 플럭스 충전층을 형성하는 단계는 플럭스 충전층 주위에 밀봉층을 더 형성하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제15항에서,상기 밀봉층은 플럭스 충전층과 동일한 재료이거나, 흐름성 없는 언더필 재료 또는 탄성 재료인 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제16항에서,상기 탄성 재료는 실리콘 고무인 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 플립칩 패키지를 제조하는 방법으로서,i) 복수의 전극 패드가 형성된 활성면을 갖는 반도체 IC 칩을 준비하는 단계,ii) 상기 복수의 전극 패드에 복수의 금속 범프를 형성하는 단계,iii) 열 인터페이스 재료(TIM)를 사용하여 상기 반도체 IC 칩의 상기 활성면 반대쪽에 있는 밑면에 열 방출판을 부착하는 단계,iv) 상기 반도체 IC 칩을 활성면이 상기 기판을 향하도록 실장하는데, 상기 복수의 금속 범프가 상기 복수의 랜드 패드에 닿도록 실장하는 단계,v) 상기 금속 범프를 솔더링하여 랜드 패드와 금속 범프에 의한 전기 접속부를 형성하는 단계,vi) 기판과 반도체 칩 사이 및 기판과 열 방출판 사이에 성형체를 형성하는 단계를 포함하는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제18항에서,상기 전기 접속부 형성 단계 이전에 기판 또는 금속 범프에 플럭스를 도포하는 단계가 더 포함되는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제18항에서,상기 성형체는 성형 가능한 언더필 및 몰딩 기술에 의해 형성되는 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제18항에서,상기 성형체는 흐름성 있는 언더필 및 디스펜싱 기술에 의해 것을 특징으로 하는 플립칩 패키지 제조 방법.
- 제18항에서,상기 열 방출판을 굴곡부를 포함하여 상기 성형체와 결합 강도가 향상되는 것을 특징으로 하는 플립칩 패키지 제조 방법.
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-
2001
- 2001-09-10 KR KR10-2001-0055454A patent/KR100442695B1/ko active IP Right Grant
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2002
- 2002-06-07 US US10/165,736 patent/US7005320B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2015125999A1 (ko) * | 2014-02-24 | 2015-08-27 | 주식회사 동부하이텍 | 씨오에프형 반도체 패키지 및 그 제조 방법 |
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US20030047814A1 (en) | 2003-03-13 |
US7005320B2 (en) | 2006-02-28 |
KR100442695B1 (ko) | 2004-08-02 |
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