CN113253873A - 金属网格结构触摸屏精细线路的加工方法 - Google Patents
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Abstract
一种金属网格结构触摸屏精细线路的加工方法，包括以下步骤：选择最小线宽加工能力为10um的曝光设备作为加工设备；先在金属网格结构触摸屏的玻璃基材或PET膜材上镀上一层金属膜层，对已镀金属膜层的产品利用黄光工艺在整面涂覆一层光刻胶，再经过紫外曝光工艺和显影工艺加工出11um的光刻胶保护线路，对显影后的产品进行烘烤坚膜；对烘烤后产品进行酸液蚀刻和光刻胶脱膜；通过涂布设备，在产品整面涂布一层有机材料保护层，再经过曝光显影和烘烤工序，在产品的表面形成一层有机材料保护层。本发明利用在10um曝光能力的设备条件下，制备出5um线宽的金属线路，达到金属网格结构触摸屏对金属线路的基本要求。
Description
技术领域
本发明属于金属网格结构触摸屏加工技术领域，特别涉及一种金属网格结构触摸屏精细线路的加工方法。
背景技术
传统的TP产品线，大多配套的是10um精度的曝光设备，正常工艺只能加工10um及以上宽度的线路，要加工更精细一点的线路，就超过了曝光设备的能力，无法达到有效控制。按照传统光刻及蚀刻工艺，产品线路最小只能做到10um，属于设备的极限能力，在这种条件下，产品的良率也会受到一定的影响。
相对于金属网格结构触摸屏（英文名metal mesh）产品，网格线路最小宽度一般在5um及以下，需要用到5um甚至更高精细的曝光设备才能满足产品要求。传统TP产线一般配套的是10um的曝光设备，因精细度要求达不到金属网格结构触摸屏产品要求，所以不具备制备金属网格结构触摸屏产品这个能力。
发明内容
鉴于背景技术所存在的技术问题，本发明所提供的金属网格结构触摸屏精细线路的加工方法，本发明是利用传统TP产线，在10um曝光能力的设备条件下，制备出5um线宽的金属线路，达到金属网格结构触摸屏对金属线路的基本要求，从而实现传统TP产线生产金属网格结构触摸屏产品的能力。
为了解决上述技术问题，本发明采取了如下技术方案来实现：
一种金属网格结构触摸屏精细线路的加工方法，准备工作：选择最小线宽加工能力为10um的曝光设备作为加工设备；
S1：先在金属网格结构触摸屏的玻璃基材或 PET 膜材上镀上一层金属膜层，所述的金属膜层为铜镍系金属膜层；
S2：对已镀金属膜层的产品利用黄光工艺在整面涂覆一层光刻胶，再经过紫外曝光工艺和显影工艺加工出11um±0.5um的光刻胶保护线路，对显影后的产品进行烘烤坚膜；
S3：对烘烤后产品进行酸液蚀刻和光刻胶脱膜；
在S3步骤中，通过调整好蚀刻液，在对产品进行蚀刻时，利用酸液和金属发生化学反应时，同时存在纵向和横向反应，控制蚀刻时间，从而控制金属线路的横向侧蚀，使金属线路双边侧蚀量在6um±0.5um，达到最终蚀刻后线路宽度在5um±1um规格范围内；
S4：通过涂布设备，在产品整面涂布一层有机材料保护层，再经过曝光显影和烘烤工序，在产品的表面形成一层有机材料保护层；或通过磁控溅射方式掩膜镀上一层无机绝缘层。
优选的方案中，所述的铜镍系金属膜层为CuNi层、Cu层和CuNiTi层的三层膜系结构，或者铜镍系金属膜层为CuNi层、Cu层和CuNi层的三层膜系结构。
优选的方案中，所述的铜镍系金属膜层的通面电阻控制在 0.02~0.4 欧姆之间。
优选的方案中，所述的在步骤S2中，铜镍系金属膜层通过黄光涂胶曝光显影的工艺后，将显影后保护光刻胶网格线宽制备为11um±0.5um。
优选的方案中，所述的在步骤S3中，对显影后的产品进行蚀刻，蚀刻用的刻蚀液成分包括 CuCl2、MgCl2、HCl 和活性剂，采用刻蚀液并配合蚀刻工艺搭配，使金属线路双边的侧蚀总量控制在6um±0.5um，而且整片内侧蚀量要均匀，持续保持稳定的侧蚀量，使蚀刻的的金属线宽能稳定在5um±1um，达到金属网格结构触摸屏金属线宽要求。
优选的方案中，所述的有机材料保护层为光学OC胶层；无机绝缘层为SiO2层或SiNx层或两者的组合层。
本专利可达到以下有益效果：
本发明是利用传统TP产线，在10um曝光能力的设备条件下，制备出5um线宽的金属线路，达到金属网格结构触摸屏对金属线路的基本要求，从而实现传统TP产线生产金属网格结构触摸屏产品的能力。
金属网格结构触摸屏产品线路加工流程，是先在玻璃基材或PET基膜材上镀上一层金属膜层，下一步是对已镀金属膜层产品通过黄光工艺涂覆光刻胶，再经过紫外曝光及显影等工艺加工出均匀的11um的光刻胶保护线路。下一步是对产品进行酸液蚀刻。在对显影后产品进行蚀刻时，通过调整蚀刻工艺，控制金属线路蚀刻的侧蚀量，使单边线路侧蚀量在3um左右，达到最终蚀刻后线路宽度在5um规格范围内。
本发明通过侧蚀的方法，使原本只能做最小10um的线宽普通黄光产线最终可以做5um的线宽金属网格产品。10um的曝光设备，正常只能做到线宽最小为10um的线路，这里通过侧蚀工艺，使最小线宽可以做到5um，拓宽了设备的极限能力。
附图说明
下面结合附图和实施例对本发明作进一步说明：
图1为本发明工艺流程图。
具体实施方式
优选的方案如图1所示，一种金属网格结构触摸屏精细线路的加工方法，包括以下步骤：
准备工作：选择最小线宽加工能力为10um的曝光设备作为加工设备；
S1：先在金属网格结构触摸屏的玻璃基材或PET膜材上镀上一层金属膜层，所述的金属膜层为铜镍系金属膜层；
S2：对已镀金属膜层的产品利用黄光工艺在整面涂覆一层光刻胶，再经过紫外曝光工艺和显影工艺加工出11um±0.5um的光刻胶保护线路，对显影后的产品进行烘烤坚膜；
进一步地，铜镍系金属膜层为CuNi层、Cu层和CuNiTi层的三层膜系结构，或者铜镍系金属膜层为CuNi层、Cu层和CuNi层的三层膜系结构。
进一步地，铜镍系金属膜层的通面电阻控制在 0.02~0.4 欧姆之间。
进一步地，在步骤S2中，铜镍系金属膜层通过黄光涂胶曝光显影的工艺后，将显影后保护光刻胶网格线宽设置为11um±0.5um。
S3：对烘烤后产品进行酸液蚀刻和光刻胶脱膜；
在S3步骤中，通过调整好蚀刻液，在对产品进行蚀刻时，利用酸液和金属发生化学反应时，同时存在纵向和横向反应，控制蚀刻时间，从而控制金属线路的横向侧蚀，使金属线路双边侧蚀量在6um±0.5um，达到最终蚀刻后线路宽度在5um±1um规格范围内；
进一步地，在步骤S3中，对显影后的产品进行蚀刻，蚀刻用的刻蚀液成分包括CuCl2、MgCl2、HCl 和活性剂，采用刻蚀液并配合蚀刻工艺搭配，使金属线路双边的侧蚀总量控制在6um±0.5um，而且整片内侧蚀量要均匀，持续保持稳定的侧蚀量，使蚀刻的的金属线宽能稳定在5um±1um，达到金属网格结构触摸屏金属线宽要求。
S4：通过涂布设备，在产品整面涂布一层有机材料保护层，再经过曝光显影和烘烤工序，在产品的表面形成一层有机材料保护层；或通过磁控溅射方式掩膜镀上一层无机绝缘层。
进一步地，有机材料保护层为光学OC胶层；无机绝缘层为SiO2层或SiNx层或两者的组合层。
实施例1：
在玻璃基材镀方块电阻为0.2欧姆的为CuNi层、Cu层和CuNiTi层的三层膜系结构，经过黄光制程加工出11um的光刻胶保护线路，蚀刻工艺：自配铜蚀刻液，喷淋蚀刻方式，蚀刻液温度22℃，蚀刻时间40秒，蚀刻后金属铜线宽平均约为4.8um。
实施例2：
在玻璃基材镀方块电阻为0.08欧姆的为CuNi层、Cu层和CuNiTi层的三层膜系结构，经过黄光制程加工出11um的光刻胶保护线路，蚀刻工艺：自配铜蚀刻液，喷淋蚀刻方式，蚀刻液温度23℃，蚀刻时间65秒，蚀刻后金属铜线宽平均约为5.2um。
工作原理如下：
金属网格结构触摸屏 产品要达到比较理想的视觉效果，金属网格线路宽度最低要求 5um 或以下。常规的方案就是整片玻璃基材或 PET基膜上镀完金属膜层后，再经过黄光产线的涂胶曝光显影的工序，最后是蚀刻出所需要金属线路。这里用的黄光曝光设备至少是 5um 甚至更高精度的。正常的金属蚀刻液及蚀刻工艺对金属的侧蚀量一般在 2um 左右，黄光光刻胶曝光显影后的线路控制在 7um 左右，蚀刻后金属线宽就是 5um。
传统触摸屏产线，配套的一般都是 10um 及以上精度的图形设备，相对于金属网格结构触摸屏产品要求来说，存在设备上的技术偏见，不具备加工金属网格结构触摸屏产品能力。
本专利的技术是克服普通10um的曝光设备的技术偏见，实现加工 5um 金属线宽的金属网格结构触摸屏 产品，达到产品理想的视觉效果。
具体实施过程是在在基材上完成金属膜层镀膜，这里的镀膜主要是铜镍系金属膜层，CuNi/Cu/CuNiTi 或 CuNi/Cu/CuNi 三层膜系结构通，面电阻一般控制在 0.02~0.4 欧姆之间。再通过黄光涂胶曝光显影的工艺后，将显影后保护光刻胶网格线宽做的 11um。接着是对显影烘烤后的产品进行蚀刻，刻蚀液主要由 CuCl2、MgCl2、HCl 及活性剂等组成，配合一定的蚀刻工艺搭配，使金属线路双边的侧蚀总量控制在 6um 左右，而且整片内侧蚀量均匀，可以持续保持稳定的侧蚀量，使蚀刻的的金属线宽能稳定在 5um，达到 金属网格结构触摸屏 金属线宽要求。
上述的实施例仅为本发明的优选技术方案，而不应视为对于本发明的限制，本发明的保护范围应以权利要求记载的技术方案，包括权利要求记载的技术方案中技术特征的等同替换方案为保护范围。即在此范围内的等同替换改进，也在本发明的保护范围之内。
Claims (6)
1.一种金属网格结构触摸屏精细线路的加工方法，其特征在于包括以下步骤：
准备工作：选择最小线宽加工能力为10um的曝光设备作为加工设备；
S1：先在金属网格结构触摸屏的玻璃基材或PET膜材上镀上一层金属膜层，所述的金属膜层为铜镍系金属膜层；
S2：对已镀金属膜层的产品利用黄光工艺在整面涂覆一层光刻胶，再经过紫外曝光工艺和显影工艺加工出11um±0.5um的光刻胶保护线路，对显影后的产品进行烘烤坚膜；
S3：对烘烤后产品进行酸液蚀刻和光刻胶脱膜；
在S3步骤中，通过调整好蚀刻液，在对产品进行蚀刻时，利用酸液和金属发生化学反应时，同时存在纵向和横向反应，控制蚀刻时间，从而控制金属线路的横向侧蚀，使金属线路双边侧蚀量在6um±0.5um，达到最终蚀刻后线路宽度在5um±1um规格范围内；
S4：通过涂布设备，在产品整面涂布一层有机材料保护层，再经过曝光显影和烘烤工序，在产品的表面形成一层有机材料保护层；或通过磁控溅射方式掩膜镀上一层无机绝缘层。
2.根据权利要求1所述的金属网格结构触摸屏精细线路的加工方法，其特征在于：铜镍系金属膜层为CuNi层、Cu层和CuNiTi层的三层膜系结构，或者铜镍系金属膜层为CuNi层、Cu层和CuNi层的三层膜系结构。
3.根据权利要求2所述的金属网格结构触摸屏精细线路的加工方法，其特征在于：铜镍系金属膜层的通面电阻控制在 0.02~0.4 欧姆之间。
4.根据权利要求3所述的金属网格结构触摸屏精细线路的加工方法，其特征在于：在步骤S2中，铜镍系金属膜层通过黄光涂胶曝光显影的工艺后，将显影后保护光刻胶网格线宽设置为11um±0.5um。
5.根据权利要求1所述的金属网格结构触摸屏精细线路的加工方法，其特征在于：在步骤S3中，对显影后的产品进行蚀刻，蚀刻用的刻蚀液成分包括 CuCl2、MgCl2、HCl 和活性剂，采用刻蚀液并配合蚀刻工艺搭配，使金属线路双边的侧蚀总量控制在6um±0.5um，而且整片内侧蚀量要均匀，持续保持稳定的侧蚀量，使蚀刻的的金属线宽能稳定在5um±1um，达到金属网格结构触摸屏金属线宽要求。
6.根据权利要求1所述的金属网格结构触摸屏精细线路的加工方法，其特征在于：有机材料保护层为光学OC胶层；无机绝缘层为SiO2层或SiNx层或两者的组合层。
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