CN113228309A - 发光二极管结构 - Google Patents
发光二极管结构 Download PDFInfo
- Publication number
- CN113228309A CN113228309A CN201980004373.7A CN201980004373A CN113228309A CN 113228309 A CN113228309 A CN 113228309A CN 201980004373 A CN201980004373 A CN 201980004373A CN 113228309 A CN113228309 A CN 113228309A
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- light emitting
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- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 230000007704 transition Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
本发明涉及一种发光二极管结构，包括衬底、第一类型半导体层、第二类型半导体层及多量子井发光层；第一类型半导体层设置在衬底上，第一类型半导体层远离衬底的表面具有一图案化结构层；多量子井发光层位于团化结构层与第二类型半导体层之间并覆盖在图案化结构层上；多量子井发光层具有多个第一厚度区域、第二厚度区域及过渡区域；以第一类型半导体层朝向第二类型半导体层的竖直方向为准，第一厚度区域的厚度大于第二厚度区域的厚度；过渡区域的厚度自第一厚度区域朝向第二厚度区域的方向逐渐变小。上述发光二极管结构，通过图案化结构层结合多量子井发光层的不同区域的厚度变化，提高了发光亮度，同时提高了内部萃取效益。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/120847 WO2021102666A1 (zh) | 2019-11-26 | 2019-11-26 | 发光二极管结构 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113228309A true CN113228309A (zh) | 2021-08-06 |
| CN113228309B CN113228309B (zh) | 2022-04-29 |
Family
ID=76129762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980004373.7A Active CN113228309B (zh) | 2019-11-26 | 2019-11-26 | 发光二极管结构 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11984530B2 (zh) |
| CN (1) | CN113228309B (zh) |
| WO (1) | WO2021102666A1 (zh) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090014713A1 (en) * | 2007-07-12 | 2009-01-15 | Sang Won Kang | Nitride semiconductor light emitting device and fabrication method thereof |
| JP2009059851A (ja) * | 2007-08-31 | 2009-03-19 | National Institute Of Advanced Industrial & Technology | 半導体発光ダイオード |
| CN101506937A (zh) * | 2005-10-31 | 2009-08-12 | 波士顿大学理事会 | 特征为织构的半导体层的光学器件 |
| CN102460741A (zh) * | 2009-05-05 | 2012-05-16 | 3M创新有限公司 | 具有增大的提取效率的再发光半导体构造 |
| CN102822995A (zh) * | 2010-02-03 | 2012-12-12 | 克里公司 | 带具有变化的阱厚度的多量子阱结构的基于iii族氮化物的发光二极管结构 |
| CN103887382A (zh) * | 2014-04-02 | 2014-06-25 | 叶瑾琳 | 一种高效率的发光二极管以及激光器 |
| CN105428486A (zh) * | 2015-12-24 | 2016-03-23 | 南昌大学 | 一种具有三维p-n结的半导体发光二极管芯片及其制备方法 |
| CN105762241A (zh) * | 2016-04-28 | 2016-07-13 | 厦门乾照光电股份有限公司 | 一种增强注入型的发光二极管的外延结构制作方法 |
| CN107316922A (zh) * | 2017-05-24 | 2017-11-03 | 太原理工大学 | 基于GaN六棱锥阵列的LED外延结构及其制备方法 |
| CN107731977A (zh) * | 2017-08-23 | 2018-02-23 | 华灿光电（浙江）有限公司 | 一种发光二极管的外延片及其制备方法 |
| CN108110100A (zh) * | 2016-11-24 | 2018-06-01 | 三星电子株式会社 | 半导体发光装置及其制造方法 |
| CN110494992A (zh) * | 2017-01-04 | 2019-11-22 | Lg伊诺特有限公司 | 半导体器件以及包括该半导体器件的发光器件封装 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005093682A (ja) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | ＧａＮ系半導体発光素子及びその製造方法 |
| CN102332515A (zh) * | 2011-09-16 | 2012-01-25 | 协鑫光电科技（张家港）有限公司 | 一种发光二极管及其制造方法 |
| KR102582649B1 (ko) | 2018-02-12 | 2023-09-25 | 삼성디스플레이 주식회사 | 표시 장치 |
-
2019
- 2019-11-26 WO PCT/CN2019/120847 patent/WO2021102666A1/zh active Application Filing
- 2019-11-26 CN CN201980004373.7A patent/CN113228309B/zh active Active
-
2021
- 2021-04-20 US US17/235,729 patent/US11984530B2/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101506937A (zh) * | 2005-10-31 | 2009-08-12 | 波士顿大学理事会 | 特征为织构的半导体层的光学器件 |
| US20090014713A1 (en) * | 2007-07-12 | 2009-01-15 | Sang Won Kang | Nitride semiconductor light emitting device and fabrication method thereof |
| JP2009059851A (ja) * | 2007-08-31 | 2009-03-19 | National Institute Of Advanced Industrial & Technology | 半導体発光ダイオード |
| CN102460741A (zh) * | 2009-05-05 | 2012-05-16 | 3M创新有限公司 | 具有增大的提取效率的再发光半导体构造 |
| CN102822995A (zh) * | 2010-02-03 | 2012-12-12 | 克里公司 | 带具有变化的阱厚度的多量子阱结构的基于iii族氮化物的发光二极管结构 |
| CN103887382A (zh) * | 2014-04-02 | 2014-06-25 | 叶瑾琳 | 一种高效率的发光二极管以及激光器 |
| CN105428486A (zh) * | 2015-12-24 | 2016-03-23 | 南昌大学 | 一种具有三维p-n结的半导体发光二极管芯片及其制备方法 |
| CN105762241A (zh) * | 2016-04-28 | 2016-07-13 | 厦门乾照光电股份有限公司 | 一种增强注入型的发光二极管的外延结构制作方法 |
| CN108110100A (zh) * | 2016-11-24 | 2018-06-01 | 三星电子株式会社 | 半导体发光装置及其制造方法 |
| CN110494992A (zh) * | 2017-01-04 | 2019-11-22 | Lg伊诺特有限公司 | 半导体器件以及包括该半导体器件的发光器件封装 |
| CN107316922A (zh) * | 2017-05-24 | 2017-11-03 | 太原理工大学 | 基于GaN六棱锥阵列的LED外延结构及其制备方法 |
| CN107731977A (zh) * | 2017-08-23 | 2018-02-23 | 华灿光电（浙江）有限公司 | 一种发光二极管的外延片及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021102666A1 (zh) | 2021-06-03 |
| US11984530B2 (en) | 2024-05-14 |
| US20210249560A1 (en) | 2021-08-12 |
| CN113228309B (zh) | 2022-04-29 |
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