CN113224198A - 一种2DWS2/InGaN II型异质结自驱动蓝光探测器及其制备方法与应用 - Google Patents
一种2DWS2/InGaN II型异质结自驱动蓝光探测器及其制备方法与应用 Download PDFInfo
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Abstract
本发明公开了一种2D WS2/InGaN II型异质结自驱动蓝光探测器及其制备方法与应用;该蓝光探测器由下至上依次包括:Si衬底层、AlN/AlGaN缓冲层、u‑GaN缓冲层、InGaN层;所述InGaN层上有SiO2窗口层、2D WS2层、第一金属电极;所述2D WS2层上有第二金属电极。本发明通过在InGaN层上引入2D WS2层,利用2D WS2材料禁带宽度为2eV及其能带结构特点,能够与InGaN层实现II型异质结结构,在界面上形成内建电场,电子将向2D WS2层迁移,空穴将向InGaN层迁移,完成光生载流子的有效分离和传输,产生更大光电流,实现了自驱动、高响应蓝光探测器。
Description
技术领域
本发明涉及蓝光探测器领域,具体涉及一种2D WS2/InGaN II型异质结自驱动蓝光探测器及其制备方法与应用。
背景技术
III族氮化物半导体材料拥有优良的光学、电学、热学、化学、机械性能,目前,Ⅲ族氮化物光电器件和功率器件也得到了广泛研究。作为第三代半导体材料研究热点之一的InGaN材料电子迁移率高、热稳定性好、化学稳定性好。并且可通过调整合金中In的组分,实现禁带宽度从3.4eV到0.7eV的连续调节,从而使得InGaN光电测器能够覆盖整个可见光波段,相比传统探测器具有体积小、易携带、易集成、工作电压低、节能环保、无需滤光系统等优势,但同时也存在相分离导致的制备困难、器件响应度低等问题。
近年来,继石墨烯后,二维材料逐渐得到发掘,其层厚仅为几个原子层,同时相比于体材料具有优异的电学、光学、机械性能,因此在催化、微电子、离子储存、光电子学领域的巨大潜力得到了研究发展。
有研究人员采用GaN/InGaN多量子阱材料制备的蓝光探测器,响应时间为300ms,暗电流为10-7A,在5V电压下,峰值响应度达到0.35A/W的响应度。但由于材料表面存在悬挂键,器件暗电流仍较高。其次,该探测器需要外加电源才可以进行工作。相比之下,为了解决以上不足,本发明通过引入缓冲层提升InGaN材料质量,通过采用2D WS2材料与InGaN功能层形成II型异质结结构,从而获得器件自驱动效应,大幅提升器件的响应度及灵敏度,同时由于二维生长材料表面无悬挂键,降低了暗电流,使得二维材料与传统研究材料相结合,获得了高性能水平的创新型器件。
发明内容
为了克服现有技术的上述缺点与不足,本发明的目的在于提供2DWS2/InGaN II型异质结自驱动蓝光探测器及其制备方法与应用,所述蓝光探测器具有生长InGaN薄膜质量好,器件获得自驱动性能,具有外量子效率高,响应速度快和灵敏度高等优点。
由于InGaN材料自身容易发生相分离,采用MOCVD方法在AlN/AlGaN缓冲层、u-GaN缓冲层上生长InGaN薄层,通过沉积2D WS2层后转移2D WS2至InGaN层制备II型异质结结构蓝光探测器具有以下突出优势;一、MOCVD适合大面积材料生长,可获得大面积InGaN薄膜;二、采用缓冲层结构,降低晶格失配,且InGaN为薄层,可降低相分离,可提升InGaN薄膜质量;三、设计II型异质结结构,通过内建电场使器件获得自驱动能力,同时大幅提升器件响应度、灵敏度等参数,从而获得高性能蓝光探测器。
本发明的目的通过以下技术方案实现。
一种2D WS2/InGaN II型异质结自驱动蓝光探测器,由下至上依次包括:Si衬底层、AlN/AlGaN缓冲层、u-GaN缓冲层、InGaN层;所述InGaN层上有SiO2窗口层、2D WS2层、第一金属电极;所述2D WS2层上有第二金属电极。
优选的,所述Si衬底的厚度为420~430μm;
优选的,所述AlN/AlGaN缓冲层包括AlN层和AlGaN层;进一步优选的,所述AlN层的厚度为250~350nm,所述AlGaN层的厚度为400~600nm。
优选的,所述u-GaN缓冲层的厚度为1.5~2.5μm;
优选的,所述InGaN层的厚度为120~180nm;
优选的,所述SiO2窗口层的厚度为50~100nm;
优选的,所述2D WS2层的厚度为2~5nm。
优选的,所述SiO2窗口层设有孔,2D WS2层位于SiO2窗口层孔内,且SiO2窗口层和2D WS2层不接触;进一步优选的,所述孔规格为3mm×3mm,所述SiO2窗口层外尺寸的规格为5mm×5mm。
优选的,所述第一金属电极位于SiO2窗口层外侧,且第一金属电极和SiO2窗口层不接触。
优选的,所述第一金属电极和第二金属电极为Ni/Au金属层电极,所述Ni/Au金属层电极包括Ni层和Au层,所述Ni层和Au层的厚度分别为70~100nm。
上述的2D WS2/InGaN II型异质结自驱动蓝光探测器的制备方法,包括以下步骤:
(1)用MOCVD在Si衬底上生长AlN/AlGaN缓冲层、u-GaN缓冲层、InGaN层;
(2)采用CVD技术在另一Si衬底上生长2D WS2层;
(3)采用PECVD法在步骤(1)所述InGaN层部分区域沉积SiO2窗口层,将步骤(2)得到的的2D WS2层进行湿法转移至InGaN层上;
(4)首先将InGaN层和步骤(3)得到的2D WS2层进行匀胶,并烘干,然后进行曝光,并显影,最后经过氧离子处理,实现光刻操作;
(5)将步骤(4)得到的InGaN层和2D WS2进行蒸镀金属电极,得到2DWS2/InGaN II型异质结自驱动蓝光探测器。
优选的,步骤(1)所述AlN/AlGaN缓冲层包括AlN层和AlGaN层,所述AlN层的生长温度为1000~1100℃,所述AlGaN层的生长温度为900~1100℃;
优选的,所述u-GaN缓冲层的生长温度为900~1050℃;
优选的,所述InGaN层的生长温度为600~800℃。
优选的,步骤(3)所述沉积SiO2窗口层的温度为150~250℃。
优选的,步骤(4)所述烘干的时间为37~46s,曝光的时间为5~11s,显影的时间为37~46s,氧离子处理的时间为1.5~3min;
优选的,步骤(5)所述蒸镀金属电极的速率为0.20~0.24nm/min。
上述的2D WS2/InGaN II型异质结自驱动蓝光探测器在蓝光探测中的应用。
本发明的2D WS2/InGaN II型异质结自驱动蓝光探测器设计思路如下:
(1)设计2D WS2/InGaN II型异质结自驱动蓝光探测器的外延结构:对于InGaN材料与Si衬底之间晶格失配(>17%)和热失配(>54%)较大因而容易导致高密度缺陷和裂纹的问题,通过设计AlN/AlGaN缓冲层、u-GaN缓冲层,可以有效控制外延层的应力以及缺陷密度,提高InGaN材料的质量。
(2)用MOCVD技术在Si衬底上生长高质量InGaN材料:通过MOCVD技术先在Si衬底上高温生长AlN/AlGaN缓冲层、u-GaN缓冲层,再在缓冲层上生长InGaN层,抑制相分离,实现高质量InGaN材料的生长。
(3)2D WS2/InGaN II型异质结自驱动蓝光探测器及其异质结的优化设计:设计2DWS2/InGaN II型异质结自驱动蓝光探测器的器件结构,利用2D WS2材料可以与InGaN材料形成II型异质结结构的特点,在InGaN部分区域沉积SiO2窗口层,再将2D WS2转移至SiO2窗口层的InGaN上,获得锐利界面的异质结结构,通过内建电场大幅提升器件性能。分析并优化芯片单元结构及参数、电极种类及接触面积、异质结结构等,实现高性能自驱动器件结构设计。
(4)2D WS2/InGaN II型异质结自驱动蓝光探测器的制备:优化探测器制备工艺,先采用PECVD法在InGaN层上沉积SiO2窗口层,后采用CVD法生长2D WS2,通过湿法转移技术将Si衬底上2D WS2层转移至InGaN层上SiO2窗口处,通过光刻蒸镀工艺,在暴露InGaN层以及2D WS2层上制备Ni/Au金属电极。改变湿法转移参数及条件、光刻曝光显影等时间、氧离子处理时间电极材料种类、电极接触面积,蒸镀速率等工艺参数,探究其对2D WS2/InGaN II型异质结自驱动蓝光探测器性能的影响,提升2D WS2/InGaN II型异质结自驱动蓝光探测器的灵敏度和响应度,实现高性能自驱动蓝光探测器制备。
与现有技术相比,本发明具有以下优点和有益效果:
(1)本发明的一种2D WS2/InGaN II型异质结自驱动蓝光探测器提供了一种先采用MOCVD高温外延方法在Si衬底上生长AlN/AlGaN缓冲层、u-GaN缓冲层,然后在缓冲层上生长InGaN层,接着通过PECVD沉积SiO2窗口层,再采用CVD法生长2D WS2,通过湿法转移的方法将Si衬底上2D WS2层转移至InGaN层上,最后通过光刻蒸镀工艺,在InGaN层以及2D WS2层上制备金属电极,实现了2D WS2/InGaN II型异质结自驱动蓝光探测器。制备方法具有工艺简单、省时高效以及能耗低的优点,有利于规模化生产。
(2)本发明的一种2D WS2/InGaN II型异质结自驱动蓝光探测器实现。通过2D WS2/InGaN II型异质结结构,在异质结界面处建立内建电场,电子向2DWS2层迁移,空穴向InGaN层迁移,完成光生载流子的有效分离和传输,产生更大光电流,实现了自驱动、高响应蓝光探测器结构设计及制备。
(3)本发明的一种2D WS2/InGaN II型异质结自驱动蓝光探测器实现。通过优化探测器件的电极接触面积、种类等参数,增强电极对光生载流子的收集能力,提升蓝光波段的量子效率;在异质结界面进行界面改性,有效实现异质结构的可控性,实现高灵敏度探测。
附图说明
图1为本发明的2D WS2/InGaN II型异质结自驱动蓝光探测器的结构剖面示意图;
图2为本发明的2D WS2/InGaN II型异质结自驱动蓝光探测器的结构俯视图;
图3为实施例1制备的2D WS2/InGaN II型异质结自驱动蓝光探测器在无外加偏压下的光谱响应图。
具体实施方式
下面结合实施例,对本发明作进一步地详细说明,但本发明的实施方式不限于此。
具体实施例中,本发明的2D WS2/InGaN II型异质结自驱动蓝光探测器的结构剖面示意图如图1所示,由图1可知,由下至上依次包括Si衬底1、AlN/AlGaN缓冲层2、u-GaN缓冲层3、InGaN层4、SiO2窗口层5,2D WS2层6以及第一Ni/Au金属层电极7-2,第二Ni/Au金属层电极7-1;其中,Si衬底1的厚度为420~430μm;AlN/AlGaN缓冲层2包括AlN层和AlGaN层,厚度分别为250~350nm、400~600nm;u-GaN缓冲层3的厚度为1.5~2.5μm;InGaN层4厚度为120~180nm;SiO2窗口层5厚度为50~100nm;2D WS2层6厚度为2~4nm。Ni/Au金属层电极包括的厚度各为70~100nm。
本发明的2D WS2/InGaN II型异质结自驱动蓝光探测器的结构俯视图如图2所示,所述SiO2窗口层5设有孔,2D WS2层6位于SiO2窗口层5孔内,且SiO2窗口层5和2D WS2层6不接触;所述第一金属电极7-2位于SiO2窗口层5外侧,且第一金属电极和SiO2窗口层不接触。
以下实施例中Si衬底层、AlN/AlGaN缓冲层、u-GaN缓冲层、InGaN层的长宽尺寸均为5mm×10mm;SiO2窗口层外尺寸为5mm×5mm、2D WS2层尺寸为3mm×3mm、第一金属电极尺寸为1.5mm×1.5mm、第二金属电极尺寸为1.5mm×1.5mm。
实施例1
本实施例的2D WS2/InGaN II型异质结自驱动蓝光探测器的制备方法,包括以下步骤:
(1)首先按照结构设计,用MOCVD在Si衬底上高温生长AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层,温度分别为1000℃、1000℃、900℃,所述AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层薄膜厚度分别为250nm、400nm、2μm;其次采用MOCVD生长InGaN层,温度为600℃,InGaN层厚度为120nm。
(2)按照结构设计,采用CVD技术在另一Si衬底上生长2D WS2层,2D WS2层厚度为2nm。
(3)按照异质结设计,采用PECVD法在InGaN部分区域沉积SiO2窗口层,将步骤(2)得到的的2D WS2层进行湿法转移至SiO2窗口处InGaN层上,获得2D WS2/InGaN异质结结构。
(4)按照电极设计,将步骤(3)得到的的InGaN及2D WS2光刻,首先将样品匀胶,并烘干38s,然后进行曝光8s,并显影38s,最后经过氧离子处理2.5min。(5)按照电极设计,将步骤(4)得到的InGaN及2D WS2进行蒸镀,控制蒸镀速率为0.20nm/min,先蒸镀Ni后蒸镀Au分别蒸镀80nm,在InGaN层蒸镀电极为阳极,2D WS2层蒸镀电极为阴极。取出后清洗得到2DWS2/InGaN II型异质结自驱动蓝光探测器。
(6)将步骤(5)得到的2D WS2/InGaN II型异质结自驱动蓝光探测器进行测试。
如图1所示,本实施例制备的2D WS2/InGaN异质结t光/蓝光双色光电探测器,包括Si衬底1,生长在Si衬底1上的AlN/AlGaN缓冲层2、生长在AlN/AlGaN缓冲层2上的u-GaN缓冲层3、生长在u-GaN缓冲层3上的InGaN层4,生长在InGaN层4上的SiO2窗口层5,转移至SiO2窗口处InGaN层4上的2D WS2层6,生长在InGaN层4及2D WS2层6上的Ni/Au金属层电极7。
图3为本实施例所得2D WS2/InGaN II型异质结自驱动蓝光探测器在无外加偏压下所测得的光谱响应图。由曲线可看出,该探测器在蓝光波段拥有极高的带宽与0.82A/W高的响应度。
实施例2
本实施例的2D WS2/InGaN II型异质结自驱动蓝光探测器的制备方法,包括以下步骤:
(1)首先按照结构设计,用MOCVD在Si衬底上高温生长AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层,温度分别为1050℃、1050℃、950℃,所述AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层薄膜厚度分别300nm、400nm、3μm;其次采用MOCVD生长InGaN层,温度为800℃,InGaN层厚度为130nm。
(2)按照结构设计,采用CVD技术在另一Si衬底上生长2D WS2层,2D WS2层厚度为3nm。
(3)按照异质结设计,采用PECVD法在InGaN部分区域沉积SiO2窗口层,将步骤(2)得到的的2D WS2层进行湿法转移至SiO2窗口处InGaN层上,获得2D WS2/InGaN异质结结构。
(4)按照电极设计,将步骤(3)得到的的InGaN及2D WS2光刻,首先将样品匀胶,并烘干40s,然后进行曝光10s,并显影40s,最后经过氧离子处理3min。
(5)按照电极设计,将步骤(4)得到的InGaN及2D WS2进行蒸镀,控制蒸镀速率为0.22nm/min,先蒸镀Ni后蒸镀Au分别蒸镀90nm,在InGaN层蒸镀电极为阳极,2D WS2层蒸镀电极为阴极。取出后清洗得到2D WS2/InGaN II型异质结自驱动蓝光探测器。
(6)将步骤(5)得到的2D WS2/InGaN II型异质结自驱动蓝光探测器进行测试。
本实施例制备的2D WS2/InGaN II型异质结自驱动蓝光探测器具有与实施例1相近的效果,在此不再赘述。
实施例3
本实施例的2D WS2/InGaN II型异质结自驱动蓝光探测器的制备方法,包括以下步骤:
(1)首先按照结构设计,用MOCVD在Si衬底上高温生长AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层,温度分别为950℃、950℃、1000℃,所述AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层薄膜厚度分别350nm、600nm、3.5μm;其次采用MOCVD生长InGaN层,温度为700℃,InGaN层厚度为150nm。
(2)按照结构设计,采用CVD技术在另一Si衬底上生长2D WS2层,2D WS2层厚度为4nm。
(3)按照异质结设计,采用PECVD法在InGaN部分区域沉积SiO2窗口层,将步骤(2)得到的的2D WS2层进行湿法转移至SiO2窗口处InGaN层上,获得2D WS2/InGaN异质结结构。
(4)按照电极设计,将步骤(3)得到的的InGaN及2D WS2光刻,首先将样品匀胶,并烘干42s,然后进行曝光12s,并显影42s,最后经过氧离子处理3.5min。
(5)按照电极设计,将步骤(4)得到的InGaN及2D WS2进行蒸镀,控制蒸镀速率为0.24nm/min,先蒸镀Ni后蒸镀Au分别蒸镀100nm,在InGaN层蒸镀电极为阳极,2D WS2层蒸镀电极为阴极。取出后清洗得到2D WS2/InGaN II型异质结自驱动蓝光探测器。
(6)将步骤(5)得到的2D WS2/InGaN II型异质结自驱动蓝光探测器进行测试。
本实施例制备的2D WS2/InGaN II型异质结自驱动蓝光探测器具有与实施例1相近的效果,在此不再赘述。
实施例4
本实施例的2D WS2/InGaN II型异质结自驱动蓝光探测器的制备方法,包括以下步骤:
(1)首先按照结构设计,用MOCVD在Si衬底上高温生长AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层,温度分别为1025℃、975℃、925℃,所述AlN缓冲层、AlGaN缓冲层、u-GaN缓冲层薄膜厚度分别325nm、500nm、2.5μm;其次采用MOCVD生长InGaN层,温度为650℃,InGaN层厚度为140nm。
(2)按照结构设计,采用CVD技术在另一Si衬底上生长2D WS2层,2D WS2层厚度为5nm。
(3)按照异质结设计,采用PECVD法在InGaN部分区域沉积SiO2窗口层,将步骤(2)得到的的2D WS2层进行湿法转移至SiO2窗口处InGaN层上,获得2D WS2/InGaN异质结结构。
(4)按照电极设计,将步骤(3)得到的的InGaN及2D WS2光刻,首先将样品匀胶,并烘干41s,然后进行曝光11s,并显影41s,最后经过氧离子处理2.75min。
(5)按照电极设计,将步骤(4)得到的InGaN及2D WS2进行蒸镀,控制蒸镀速率为0.23nm/min,先蒸镀Ni后蒸镀Au分别蒸镀70nm,在InGaN层蒸镀电极为阳极,2D WS2层蒸镀电极为阴极。取出后清洗得到2D WS2/InGaN II型异质结自驱动蓝光探测器。
(6)将步骤(5)得到的2D WS2/InGaN II型异质结自驱动蓝光探测器进行测试。
本实施例制备的2D WS2/InGaN II型异质结自驱动蓝光探测器具有与实施例1相近的效果,在此不再赘述。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (10)
1.一种2D WS2/InGaN II型异质结自驱动蓝光探测器,其特征在于,由下至上依次包括:Si衬底层、AlN/AlGaN缓冲层、u-GaN缓冲层、InGaN层;所述InGaN层上有SiO2窗口层、2D WS2层、第一金属电极;所述2D WS2层上有第二金属电极。
2.根据权利要求1所述的2D WS2/InGaN II型异质结自驱动蓝光探测器,其特征在于,所述Si衬底的厚度为420~430μm;所述AlN/AlGaN缓冲层包括AlN层和AlGaN层;所述u-GaN缓冲层的厚度为1.5~2.5μm;所述InGaN层的厚度为120~180nm;所述SiO2窗口层的厚度为50~100nm;所述2D WS2层的厚度为2~5nm。
3.根据权利要求2所述的2D WS2/InGaN II型异质结自驱动蓝光探测器,其特征在于,所述AlN层的厚度为250~350nm,所述AlGaN层的厚度为400~600nm。
4.根据权利要求1所述的2D WS2/InGaN II型异质结自驱动蓝光探测器,其特征在于,所述SiO2窗口层设有孔,2D WS2层位于SiO2窗口层孔内,且SiO2窗口层和2D WS2层不接触;所述第一金属电极位于SiO2窗口层外侧,且第一金属电极和SiO2窗口层不接触。
5.根据权利要求1所述的2D WS2/InGaN II型异质结自驱动蓝光探测器,其特征在于,所述第一金属电极和第二金属电极为Ni/Au金属层电极,所述Ni/Au金属层电极包括Ni层和Au层,所述Ni层和Au层的厚度分别为70~100nm。
6.权利要求1-5任一项所述的2D WS2/InGaN II型异质结自驱动蓝光探测器的制备方法,其特征在于,包括以下步骤:
(1)用MOCVD在Si衬底上生长AlN/AlGaN缓冲层、u-GaN缓冲层、InGaN层;
(2)采用CVD技术在另一Si衬底上生长2D WS2层;
(3)采用PECVD法在步骤(1)所述InGaN层部分区域沉积SiO2窗口层,将步骤(2)得到的的2D WS2层进行湿法转移至InGaN层上;
(4)首先将InGaN层和步骤(3)得到的2D WS2层进行匀胶,并烘干,然后进行曝光,并显影,最后经过氧离子处理,实现光刻操作;
(5)将步骤(4)得到的InGaN层和2D WS2进行蒸镀金属电极,得到2D WS2/InGaN II型异质结自驱动蓝光探测器。
7.根据权利要求1所述的制备方法,其特征在于,步骤(1)所述AlN/AlGaN缓冲层包括AlN层和AlGaN层,所述AlN层的生长温度为1000~1100℃,所述AlGaN层的生长温度为900~1100℃;所述u-GaN缓冲层的生长温度为900~1050℃;所述InGaN层的生长温度为600~800℃。
8.根据权利要求1所述的制备方法,其特征在于,步骤(3)所述沉积SiO2窗口层的温度为150~250℃。
9.根据权利要求1所述的制备方法,其特征在于,步骤(4)所述烘干的时间为37~46s,曝光的时间为5~11s,显影的时间为37~46s,氧离子处理的时间为1.5~3min;步骤(5)所述蒸镀金属电极的速率为0.20~0.24nm/min。
10.权利要求1-5任一项所述的2D WS2/InGaN II型异质结自驱动蓝光探测器在蓝光探测中的应用。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113972293A (zh) * | 2021-09-26 | 2022-01-25 | 华南理工大学 | 一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用 |
CN114242817A (zh) * | 2021-11-15 | 2022-03-25 | 华南理工大学 | 一种Mg掺杂增强过渡金属硫化物基可见光探测器及其制备方法 |
CN115188856A (zh) * | 2022-07-21 | 2022-10-14 | 华南理工大学 | 一种2D GaS/AlGaN II型异质结自驱动紫外光探测器及其制备方法与应用 |
WO2023045172A1 (zh) * | 2021-09-26 | 2023-03-30 | 华南理工大学 | 一种碳化钛/InGaN异质结蓝光探测器及其制备方法 |
JP7506833B2 (ja) | 2021-09-26 | 2024-06-26 | 華南理工大学 | 二セレン化モリブデン/InGaNマルチスペクトル光検出器及びその製造方法と応用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2162712Y (zh) * | 1993-07-02 | 1994-04-20 | 中国科学院半导体研究所 | 一种硅的光探测器件 |
JP2002305204A (ja) * | 2001-04-05 | 2002-10-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体構造及びヘテロ接合バイポーラトランジスタ |
US20140061057A1 (en) * | 2012-09-06 | 2014-03-06 | California Institute Of Technology | Light-driven hydroiodic acid splitting from semiconductive fuel generator |
CN105405942A (zh) * | 2015-12-26 | 2016-03-16 | 中国电子科技集团公司第十三研究所 | Si衬底LED外延片及其制备方法 |
US20160233383A1 (en) * | 2015-02-10 | 2016-08-11 | iBeam Materials, Inc. | Epitaxial Hexagonal Materials on IBAD-Textured Substrates |
-
2021
- 2021-04-12 CN CN202110391226.9A patent/CN113224198B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2162712Y (zh) * | 1993-07-02 | 1994-04-20 | 中国科学院半导体研究所 | 一种硅的光探测器件 |
JP2002305204A (ja) * | 2001-04-05 | 2002-10-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体構造及びヘテロ接合バイポーラトランジスタ |
US20140061057A1 (en) * | 2012-09-06 | 2014-03-06 | California Institute Of Technology | Light-driven hydroiodic acid splitting from semiconductive fuel generator |
US20160233383A1 (en) * | 2015-02-10 | 2016-08-11 | iBeam Materials, Inc. | Epitaxial Hexagonal Materials on IBAD-Textured Substrates |
CN105405942A (zh) * | 2015-12-26 | 2016-03-16 | 中国电子科技集团公司第十三研究所 | Si衬底LED外延片及其制备方法 |
Non-Patent Citations (1)
Title |
---|
YANG YU等: "Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer", 《SCIENTIFIC REPORTS》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113972293A (zh) * | 2021-09-26 | 2022-01-25 | 华南理工大学 | 一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用 |
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JP7506833B2 (ja) | 2021-09-26 | 2024-06-26 | 華南理工大学 | 二セレン化モリブデン/InGaNマルチスペクトル光検出器及びその製造方法と応用 |
CN114242817A (zh) * | 2021-11-15 | 2022-03-25 | 华南理工大学 | 一种Mg掺杂增强过渡金属硫化物基可见光探测器及其制备方法 |
CN115188856A (zh) * | 2022-07-21 | 2022-10-14 | 华南理工大学 | 一种2D GaS/AlGaN II型异质结自驱动紫外光探测器及其制备方法与应用 |
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