CN113186502A - Method for uniformly plating copper on surfaces of multiple spiral lines through magnetron sputtering - Google Patents
Method for uniformly plating copper on surfaces of multiple spiral lines through magnetron sputtering Download PDFInfo
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- CN113186502A CN113186502A CN202110419772.9A CN202110419772A CN113186502A CN 113186502 A CN113186502 A CN 113186502A CN 202110419772 A CN202110419772 A CN 202110419772A CN 113186502 A CN113186502 A CN 113186502A
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- magnetron sputtering
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 58
- 239000010949 copper Substances 0.000 title claims abstract description 58
- 238000007747 plating Methods 0.000 title claims abstract description 38
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007888 film coating Substances 0.000 claims abstract description 12
- 238000009501 film coating Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 238000000605 extraction Methods 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a method for uniformly plating copper on the surfaces of a plurality of spiral lines by magnetron sputtering, which comprises the steps of opening a chamber cover plate of a vacuum chamber, tying the plurality of spiral lines on a workpiece frame, arranging the workpiece frame in a film coating chamber, closing the film coating chamber, and setting the rotation speed of the workpiece to be 10-50 r/min; opening a vacuum pump set and starting a heating device; opening an argon valve to adjust the air inflow and adjusting the opening of a main extraction valve; adjusting the bias voltage of the workpiece to 10-200V, starting sputtering power, adjusting the power of a power supply to 200-300W, and carrying out magnetron sputtering copper plating operation; after the sputtering copper plating is finished, the sputtering power supply, the bias voltage and the heating power supply are turned off, and after the temperature of the film coating chamber is reduced, the equipment is turned off, so that the copper plated spiral line is cooled along with the furnace; and taking out the workpiece after the temperature of the coating chamber is reduced to room temperature. The invention can uniformly deposit copper films on the surfaces of a plurality of spiral lines at the same time, improves the production efficiency of copper plating on the surfaces of the spiral lines, and overcomes the defect that the existing production capacity cannot meet the requirement of mass production of traveling wave tubes.
Description
Technical Field
The invention relates to a coating technology, in particular to a method for plating copper on the surfaces of a plurality of spiral lines uniformly by magnetron sputtering.
Background
Along with the continuous improvement of travelling wave tube power magnitude and operating frequency, high frequency loss and heat dissipation problem will be more outstanding, can improve electric conduction, heat conductivility through copper-plating on the helix surface, reduce the high frequency loss of helix. The common magnetron sputtering device has a small number of workpieces during film coating even by adopting a planetary rotating mechanism, only a plurality of spiral lines can be coated at the same time, and the production requirement of batch traveling wave tubes can not be met.
Disclosure of Invention
The invention aims to provide a method for uniformly plating copper on the surfaces of a plurality of spiral lines by magnetron sputtering.
The technical solution for realizing the purpose of the invention is as follows: a method for uniformly plating copper on the surfaces of a plurality of spiral lines by magnetron sputtering, which uses magnetron sputtering copper plating equipment to simultaneously plate copper on the spiral lines, comprises the following steps:
step 1, opening a chamber cover plate of a vacuum chamber, tying a plurality of spiral wires on a workpiece frame, arranging the workpiece frame in a coating chamber, closing the coating chamber, and setting the rotation speed of the workpiece to be 10-50 r/min;
step 2, opening a vacuum pump set and starting a heating device;
step 3, opening an argon valve to adjust the air inflow and adjusting the opening of a main extraction valve;
step 4, adjusting the bias voltage of the workpiece to 10-200V, starting sputtering power, adjusting the power of a power supply to 200-300W, and carrying out magnetron sputtering copper plating operation;
step 5, after the sputtering copper plating is finished, turning off a sputtering power supply, a bias voltage and a heating power supply, and turning off the equipment after the temperature of the film coating chamber is reduced to cool the copper plated spiral line along with the furnace;
and 6, taking out the workpiece after the temperature of the coating chamber is reduced to the room temperature.
Further, in step 1, a plurality of spirals were tied to the work rest using 0.3mm copper wire.
Further, in step 2, the vacuum pump set is opened until the vacuum degree is less than 1 × 10-3When Pa, the heating device is started to 100-350 ℃, the temperature is maintained for more than 30 minutes when the set temperature is reached, and the vacuum degree is kept less than 1 multiplied by 10-3Pa。
Further, in the step 3, an argon valve is opened to adjust the air inflow to be 20-60 sccm, and the opening degree of the main extraction valve is adjusted to be 0.2-2.0 Pa.
Further, in the step 5, after the sputtering copper plating is finished, the sputtering power supply, the bias voltage and the heating power supply are turned off, and when the temperature of the film coating chamber is reduced to 100 ℃, the equipment is turned off, so that the copper plated spiral line is cooled along with the furnace.
Compared with the prior art, the invention has the following remarkable advantages: through the setting of relevant technological parameters of helix magnetron sputtering copper plating equipment, can evenly deposit the copper film on many helix surfaces simultaneously, improve the copper-plated production efficiency in helix surface, remedy current production capacity can't satisfy the not enough of travelling wave tube batch production.
Drawings
FIG. 1 is a simplified diagram of a spiral magnetron sputtering coating device.
Fig. 2 is a schematic view of a workpiece holder.
FIG. 3 is a surface state diagram of a plurality of helical lines after magnetron sputtering copper plating, wherein (a) is a surface state diagram of a helical line with the diameter of 2mm after copper plating, and (b) is a surface state diagram of a helical line with the diameter of 5mm after copper plating.
FIG. 4 is a graph showing the effect of the bonding force test on the surface of the copper layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The invention uses the spiral line magnetron sputtering coating equipment to carry out surface magnetron sputtering copper plating on a plurality of spiral lines. The simple drawing of the equipment is shown in figure 1, and it can be seen that the equipment comprises a planetary rotating mechanism, so that the outer surface of a part suspended by a workpiece support can be ensured to receive film deposition at equal probability, and if the workpiece support is not used, only 6 spiral lines can be coated at the same time in each coating process. According to the invention, the workpiece frame is selected, the structure of the workpiece frame is shown in figure 2, the fixing holes are designed on the workpiece frame, the spiral lines can be suspended in the frame of the workpiece frame through copper wires, and because each workpiece frame can suspend 8-10 spiral lines and 6 workpiece frames are arranged, 50 spiral lines can be installed and copper plating can be carried out at the same time, so that the production efficiency can be greatly improved.
Based on the equipment, the method for uniformly plating copper on the surfaces of the spiral lines by magnetron sputtering comprises the following steps:
step 1, opening a chamber cover plate of a vacuum chamber, tying a plurality of spiral lines on a workpiece rack by using 0.3mm copper wires, placing the workpiece rack in the coating chamber, closing the coating chamber, and setting the rotation speed of the workpiece to be 10-50 r/min.
The copper wire is used in this step because the copper wire is softer than other metal wires. However, the diameter of the copper wire can not be too large or too small, the copper wire is not enough flexible due to too large diameter, the spiral line is deformed due to the fact that the spiral line is fixed, the metal wire is not enough in strength due to too small diameter of the copper wire, and the metal wire can be broken in the later-stage film coating rotation process. Therefore, the diameter of the copper wire is definitely thinned, and the copper wire with the size of 0.3mm is used, so that the strength of the copper wire can meet the requirement when the spiral line is fixed, and the flexibility requirement of the copper wire can be guaranteed.
In addition, when the rotating speed is too low, plasma bombardment can not be received by each surface of the spiral line at the same probability, namely uniform coating can not be realized, and when the rotating speed is too high, the centrifugal force in the rotating process can be too large, so that the spiral line is easy to deform. Therefore, the rotation rate of the workpiece is definitely refined, and is set to be 10-50 r/min, so that the uniform coating on the surfaces of 50 spiral lines is realized.
Step 2, opening a vacuum pump group until the vacuum degree is less than 1 multiplied by 10-3When Pa is needed, the heating device is started to 100-350 ℃, the temperature is maintained for more than 30 minutes when the set temperature is reached, and finally the vacuum degree is less than 1 multiplied by 10-3Pa。
In the step, 100-350 ℃ is selected, residual gas and water vapor attached to the inner wall of the vacuum chamber can be removed as far as possible, the purity of the vacuum environment during film coating is ensured, and meanwhile, copper particles have high activity at the temperature, so that a smooth and compact film layer is favorably realized.
And 3, opening an argon valve to adjust the air inflow to be 20-60 sccm, and adjusting the opening degree of the main extraction valve to the vacuum degree of 0.2-2.0 Pa.
In the step, the vacuum degree is 0.2-2.0 Pa, the vacuum degree range during film coating is more definite, a compact copper film can be realized under the vacuum degree, and meanwhile, the stable deposition rate can be obtained, and the control on the thickness of the film layer is facilitated.
And 4, adjusting the bias voltage of the workpiece to 10-200V, starting the sputtering power, adjusting the power of the power supply to 200-300W, and performing magnetron sputtering copper plating operation.
The bias voltage is increased in the step, which is beneficial to improving the compactness of the film.
And 5, turning off the sputtering power supply, the bias voltage and the heating power supply after the sputtering copper plating is finished, and turning off the equipment when the temperature of the film coating chamber is reduced to 100 ℃ so as to reduce the temperature of the copper-plated spiral line along with the furnace.
And 6, taking out the workpiece after the temperature of the coating chamber is reduced to room temperature (for example, below 40 ℃).
In order to verify the effectiveness of the scheme of the invention, the process is used on a spiral magnetron sputtering copper plating device, and 50 spirals are plated with copper at the same time. The surface state of the multiple spiral lines after copper plating through magnetron sputtering is shown in fig. 3, and it can be seen that the copper layer on the surface of the spiral line after magnetron sputtering is good in appearance, no defect is found, the surface of the spiral line is bright, and the spiral line has obvious light reflection. The thickness of the copper film on the outer surface of one selected spiral line on each workpiece disc was measured by a film thickness gauge, and the measurement results are shown in table 1.
TABLE 1 measurement of film thickness after copper plating of spiral lines
As can be seen from the data in Table 1, the average thickness difference between every two spiral lines is small, the integral uniformity is good between 1.48-1.70 um, the integral uniformity of the film thickness is within +/-7%, and the integral film thickness is relatively uniform. The surface can realize the effect of overall uniform coating.
In order to not verify the binding force of the copper layer, copper is plated on the surface of a sample with the same material surface, and a hundred-square method and a cross scribing method are adopted for testing. In the test of the method of the check, the film layer is pasted by using the 3M adhesive tape and pulled open, and the broken copper layer does not appear in the check, so that the result shows that the bonding force between the copper layer prepared by the coating process and the substrate is good; in the cross scribing test, the phenomena of peeling and falling do not occur, and the result shows that the bonding force of the copper layer and the spiral line is good.
In conclusion, the invention improves the production efficiency of copper plating on the surface of the spiral line, makes up the defect that the existing production capacity cannot meet the requirement of batch production of the traveling wave tube, and ensures the copper plating effect. Can be applied to tube seeds such as 6174B, 6183B, 6197, ZX003 and the like.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (5)
1. The method for uniformly plating copper on the surfaces of a plurality of spiral lines by magnetron sputtering is characterized in that a magnetron sputtering copper plating device is used for plating copper on the spiral lines simultaneously, and comprises the following steps:
step 1, opening a chamber cover plate of a vacuum chamber, tying a plurality of spiral wires on a workpiece frame, arranging the workpiece frame in a coating chamber, closing the coating chamber, and setting the rotation speed of the workpiece to be 10-50 r/min;
step 2, opening a vacuum pump set and starting a heating device;
step 3, opening an argon valve to adjust the air inflow and adjusting the opening of a main extraction valve;
step 4, adjusting the bias voltage of the workpiece to 10-200V, starting sputtering power, adjusting the power of a power supply to 200-300W, and carrying out magnetron sputtering copper plating operation;
step 5, after the sputtering copper plating is finished, turning off a sputtering power supply, a bias voltage and a heating power supply, and turning off the equipment after the temperature of the film coating chamber is reduced to cool the copper plated spiral line along with the furnace;
and 6, taking out the workpiece after the temperature of the coating chamber is reduced to the room temperature.
2. The method for magnetron sputtering uniform copper plating on the surfaces of the plurality of spiral wires according to claim 1, wherein in step 1, the plurality of spiral wires are tied on a workpiece holder by using 0.3mm copper wires.
3. The method for magnetron sputtering uniform copper plating on the surfaces of a plurality of spiral lines as claimed in claim 1, wherein in the step 2, a vacuum pump set is opened until the vacuum degree is less than 1 x 10-3When Pa, the heating device is started to 100-350 ℃, the temperature is maintained for more than 30 minutes when the set temperature is reached, and the vacuum degree is kept less than 1 multiplied by 10-3Pa。
4. The method for magnetron sputtering uniform copper plating on the surfaces of a plurality of spiral lines as claimed in claim 1, wherein in the step 3, the argon valve is opened to adjust the air input to be 20-60 sccm, and the main extraction valve is adjusted to have a vacuum degree of 0.2-2.0 Pa.
5. The method for magnetron sputtering uniform copper plating on the surfaces of a plurality of spiral lines as claimed in claim 1, wherein in the step 5, after the sputtering copper plating is completed, the sputtering power supply, the bias voltage and the heating power supply are turned off, and when the temperature of the film coating chamber is reduced to 100 ℃, the equipment is turned off, so that the temperature of the copper-plated spiral line is reduced along with the furnace.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010617128 | 2020-06-30 | ||
| CN2020106171288 | 2020-06-30 |
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| CN113186502A true CN113186502A (en) | 2021-07-30 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2075655U (en) * | 1989-09-05 | 1991-04-24 | 核工业西南物理研究院 | Double cavity rotary magnetic control splashing film plating machine |
| CN101544473A (en) * | 2009-03-06 | 2009-09-30 | 湖州金泰科技股份有限公司 | Method for plating glasses to a large area without pollution |
| CN101634011A (en) * | 2008-07-21 | 2010-01-27 | 中国科学院宁波材料技术与工程研究所 | Magnetic control sputtering device and method for uniformly coating film on outer surface of workpiece |
| CN102409304A (en) * | 2011-06-13 | 2012-04-11 | 星弧涂层科技(苏州工业园区)有限公司 | Method for coating films on focusing mirrors |
| CN106906449A (en) * | 2017-02-23 | 2017-06-30 | 北京创世威纳科技有限公司 | A kind of magnetic control sputtering film plating device |
| CN109666910A (en) * | 2018-12-29 | 2019-04-23 | 金华万得福日用品股份有限公司 | A kind of coated film plastic tableware production technology |
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-
2021
- 2021-04-19 CN CN202110419772.9A patent/CN113186502A/en active Pending
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| CN211227346U (en) * | 2019-12-03 | 2020-08-11 | 武汉科瑞达真空科技有限公司 | Double-sided film coating machine |
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