CN114318234A - Ti-Cu-Ni multilayer film with single crystal silicon carbide as substrate and preparation method thereof - Google Patents
Ti-Cu-Ni multilayer film with single crystal silicon carbide as substrate and preparation method thereof Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 229910004696 Ti—Cu—Ni Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 238000003466 welding Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 9
- 230000001105 regulatory effect Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 4
- 230000006911 nucleation Effects 0.000 abstract description 3
- 238000010899 nucleation Methods 0.000 abstract description 3
- 239000007888 film coating Substances 0.000 abstract description 2
- 238000009501 film coating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 10
- 239000011247 coating layer Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000037452 priming Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
The invention discloses a Ti-Cu-Ni multilayer film taking single crystal silicon carbide as a substrate and a preparation method thereof, and the film comprises a single crystal silicon carbide substrate, a Ti base coat, a Ni metal layer, a Cu metal layer, an Au metal layer, a Pt metal layer and an Ausn welding layer, wherein the Ti base coat is sputtered on the top of the single crystal silicon carbide substrate in a direct current manner, the Ni metal layer is sputtered on the top of the Ti base coat in a direct current manner, and the Cu metal layer is sputtered on the top of the Ni metal layer in a direct current manner, by adjusting sputtering time and sputtering power, the thickness of each layer can be artificially regulated, the electric conductivity and the thermal conductivity of the single crystal silicon carbide substrate are favorably improved, the welding performance is improved, meanwhile, the single crystal silicon carbide substrate and the magnetic field direction form 30-60 degrees, the rotation of the single crystal silicon carbide substrate is combined, the integral film coating uniformity of the single crystal silicon carbide substrate is ensured, and a large number of dispersed nucleation points are formed on an original coating layer by utilizing high sputtering power, and then, the compactness and the adhesion of the outermost plating layer are ensured by using low sputtering power, and the thermal conductivity is improved by 20 percent compared with that of the same type of product.
Description
Technical Field
The invention relates to the technical field of surface coating of monocrystalline silicon carbide substrates, in particular to a Ti-Cu-Ni multilayer film taking monocrystalline silicon carbide as a substrate and a preparation method thereof.
Background
Currently, China is in the key period of 'new capital construction', and modern industrial fields such as 5G communication, photovoltaic power generation, rail transit, smart power grids and aerospace require a new generation of semiconductor materials with higher power, high voltage resistance, high temperature resistance, high frequency, low energy consumption and stronger radiation resistance as chip substrates. The monocrystalline silicon carbide serving as a third-generation compound semiconductor material has the advantages of high heat-conducting property and high-power radio frequency output in a high frequency band, breaks through the inherent defects of the previous generation of gallium arsenide and silicon-based LDMOS devices, and meets the requirements of the new generation of chips in the industrial field on performance and processing capacity. However, since the single crystal silicon carbide is not conductive and can not be directly welded, metallization is required to be performed on the surface of the single crystal silicon carbide substrate, so that the single crystal silicon carbide substrate meets the requirements of conductivity and welding, and the oxidation resistance and corrosion resistance of the single crystal silicon carbide substrate are improved.
At present, the methods for coating the monocrystalline silicon carbide on the market mainly comprise a magnetron sputtering method and a multi-arc ion plating method, the heat conduction and heat dissipation performance of the product coated by the conventional method is poor, the quality of the product is greatly reduced, and meanwhile, the surface of a multilayer film prepared by the conventional coating method is uneven, the uniformity of the coated film is greatly reduced, and the quality of the product is reduced.
Disclosure of Invention
The invention aims to provide a Ti-Cu-Ni multilayer film taking single crystal silicon carbide as a substrate and a preparation method thereof, so as to solve the problems in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme: a Ti-Cu-Ni multilayer film with single crystal silicon carbide as a substrate comprises a single crystal silicon carbide substrate, a Ti base coat, a Ni metal layer, a Cu metal layer, an Au metal layer, a Pt metal layer and an Ausn welding layer, wherein the Ti base coat is sputtered on the top of the single crystal silicon carbide substrate in a direct current mode, the Cu metal layer is sputtered on the top of the Ti base coat in a direct current mode, the Ni metal layer is sputtered on the top of the Cu metal layer in a direct current mode, the Au metal layer is sputtered on the top of the Ni metal layer in a direct current mode, the Pt metal layer is sputtered on the top of the Au metal layer in a direct current mode, and the Ausn welding layer is deposited on the top of the Pt metal layer.
A preparation method of a Ti-Cu-Ni multilayer film taking single crystal silicon carbide as a base comprises the steps of firstly, preprocessing a substrate; step two, cleaning and drying; step three, sputtering a Ti layer; step four, sputtering a Ni layer; step five, sputtering a Cu layer; step six, sputtering an Au layer; step seven, sputtering a Pt layer; depositing an AuSn layer;
in the first step, the monocrystalline silicon carbide substrate is taken, and the surface of the monocrystalline silicon carbide substrate is polished and polished by a polisher and a polishing machine respectively, so that the surface is smooth and clean for later use;
in the second step, the monocrystalline silicon carbide substrate polished in the first step is put into an ultrasonic cleaning machine for cleaning, and is dried by a dryer for later use after cleaning;
placing the single crystal silicon carbide substrate cleaned in the step two in a fixture for magnetron sputtering, installing Ti targets on a target base, adjusting the target spacing, introducing argon into a sputtering cavity for protection, transferring the single crystal silicon carbide substrate into the sputtering cavity, vacuumizing the cavity, ensuring that the direction of the single crystal silicon carbide substrate and a magnetron sputtering magnetic field is 30-60 degrees, and sputtering by adopting a direct current sputtering mode to obtain a Ti base layer;
in the fourth step, the sputtering condition is adjusted, the included angle between the monocrystalline silicon carbide substrate and the magnetron sputtering magnetic field after the Ti base layer is sputtered in the third step is kept, then a Cu target is arranged on the target base, and a Cu metal layer is obtained by sputtering on the monocrystalline silicon carbide substrate by utilizing a radio frequency power supply;
in the fifth step, the sputtering condition is adjusted, after the Cu metal layer sputtering in the fourth step is finished, a Ni target is installed on the target base, and a radio frequency power supply is utilized to sputter on the monocrystalline silicon carbide substrate to obtain the Ni metal layer;
in the sixth step, after the sputtering of the Ni metal layer in the sixth step is finished, an Au target is arranged on the target base, and then the sputtering of the Au metal layer is finished on the monocrystalline silicon carbide substrate by utilizing a radio frequency power supply;
in the seventh step, after the Au metal layer in the sixth step is sputtered, a radio frequency power supply is used for sputtering on the monocrystalline silicon carbide substrate to obtain a Pt metal layer;
in the eighth step, after the Pt metal layer in the seventh step is sputtered, a radio frequency power source is used to sputter and deposit the Ausn welding layer on the single crystal silicon carbide substrate, thereby completing the preparation of the Ti-Cu-Ni multilayer film using the single crystal silicon carbide as a substrate.
According to the technical scheme, in the second step, the ultrasonic cleaning time is 30-60 s.
According to the technical scheme, in the third step, the air pressure of the cavity is adjusted to be 10 by utilizing argon gas-3～10-2Pa。
According to the technical scheme, in the third step, the vacuum degree is 10-5～10-4Pa。
According to the technical scheme, in the fourth step, the sputtering condition is that the working air pressure is 0.2-0.5 Pa, the working temperature is 50-100 ℃, the rotation speed of the monocrystalline silicon carbide substrate is 5-30 DEG/s, and the applied negative bias is-50-100V.
According to the technical scheme, in the fourth step, the sputtering power is 30-80W, and the sputtering time is 5-10 min.
According to the technical scheme, in the eighth step, the sputtering power is 40-80W, and the sputtering time is 5-12 min.
According to the technical scheme, in the sixth step, the sputtering power is 40-90W, and the sputtering time is 6-13 min.
According to the technical scheme, in the seventh step, the sputtering power is 40-100W, and the sputtering time is 7-15 min.
According to the technical scheme, in the fifth step, the sputtering process is divided into two stages, wherein in the first stage, the sputtering power is 100W, and the sputtering time is 3-4 min; secondly, the sputtering power is 80W, and the sputtering time is 5 min.
Compared with the prior art, the invention has the following beneficial effects: the invention respectively sputters a Ti priming layer, a Ni metal layer, a Cu metal layer, an Au metal layer, a Pt metal layer and an Ausn welding layer on a single crystal silicon carbide substrate, the thickness of each layer can be artificially regulated by regulating the sputtering time and the sputtering power, the electric conductivity and the thermal conductivity of the single crystal silicon carbide substrate are favorably improved, and the single crystal silicon carbide substrate has excellent welding performance, on the other hand, the single crystal silicon carbide substrate forms 30-60 degrees with the direction of a magnetic field and combines the rotation of the silicon carbide substrate, the uniformity of the whole film coating of the single crystal silicon carbide substrate is ensured, finally, a multilayer film with good thickness uniformity is prepared on the surface of the single crystal silicon carbide substrate, when the metal Ni layer is sputtered and welded, the multilayer film is firstly sputtered for 3-4min at 100W, then sputtered for 5min at 80W, a large amount of dispersed nucleation points are formed on the original plating layer by utilizing the high sputtering power, then the low sputtering power is utilized to control the growth speed of the film, the final outer layer film with fine crystal grains and uniform microstructure is formed, the compactness and the adhesive force of the outermost plating layer are guaranteed, the welding difficulty is reduced, the welding adhesive force is enhanced, and the monocrystal silicon carbide plated with the Ti-Ni-Cu-Au-Pt-AuSn multilayer film is used as the substrate, so that the electric conductivity and the welding requirement can be met, compared with the same type of product, the heat conductivity is improved by 20%, the heat dissipation capacity is extremely high, and the heat dissipation requirement of a high-performance chip is met.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a perspective view of the overall structure of the present invention;
FIG. 2 is a flow chart of a method of the present invention;
in the figure: 1. a single crystal silicon carbide substrate; 2. ti priming coat; 3. a Cu metal layer; 4. a Ni metal layer; 5. an Au metal layer; 6. a Pt metal layer; 7. ausn solder layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a technical solution: a Ti-Cu-Ni multilayer film with single crystal silicon carbide as a base comprises a single crystal silicon carbide substrate 1, a Ti base coat layer 2, a Ni metal layer 4, a Cu metal layer 3, an Au metal layer 5, a Pt metal layer 6 and an Ausn welding layer 7, wherein the Ti base coat layer 2 is sputtered on the top of the single crystal silicon carbide substrate 1 in a direct current mode, the Cu metal layer 3 is sputtered on the top of the Ti base coat layer 2 in a direct current mode, the Ni metal layer 4 is sputtered on the top of the Cu metal layer 3 in a direct current mode, the Au metal layer 5 is sputtered on the top of the Ni metal layer 4 in a direct current mode, the Pt metal layer 6 is sputtered on the top of the Au metal layer 5 in a direct current mode, and the Ausn welding layer 7 is deposited on the top of the Pt metal layer 6.
Referring to fig. 2, a method for preparing a Ti-Cu-Ni multilayer film based on single crystal silicon carbide includes a first step of pre-treating a substrate; step two, cleaning and drying; step three, sputtering a Ti layer; step four, sputtering a Ni layer; step five, sputtering a Cu layer; step six, sputtering an Au layer; step seven, sputtering a Pt layer; depositing an AuSn layer;
in the first step, the monocrystalline silicon carbide substrate 1 is taken, and the surface of the monocrystalline silicon carbide substrate 1 is polished and polished by a polisher and a polishing machine respectively, so that the surface is smooth and clean for later use;
in the second step, the monocrystalline silicon carbide substrate 1 polished and polished in the first step is put into an ultrasonic cleaning machine for cleaning, and is dried for later use by a dryer after cleaning, wherein the ultrasonic cleaning time is 30-60 s;
in the third step, the single crystal silicon carbide substrate 1 cleaned in the second step is placed in a fixture for magnetron sputtering, a Ti target is arranged on a target base, the target distance is adjusted, then argon is introduced into a sputtering cavity for protection, then the single crystal silicon carbide substrate 1 is transferred into the sputtering cavity, the cavity is vacuumized, the single crystal silicon carbide substrate 1 and the magnetron sputtering magnetic field are ensured to be 30-60 degrees, and a direct current sputtering mode is adopted for sputtering to obtain a Ti base layer 2; the pressure of the cavity is adjusted to 10 by using argon-3～10-2Pa, vacuum degree of 10-5～10-4Pa；
In the fourth step, the sputtering condition is adjusted, the included angle between the monocrystalline silicon carbide substrate 1 finished by sputtering the Ti base layer 2 in the third step and the magnetron sputtering magnetic field is kept, then a Cu target is arranged on the target base, and a Cu metal layer 3 is obtained by sputtering on the monocrystalline silicon carbide substrate 1 by utilizing a radio frequency power supply; the sputtering condition is that the working air pressure is 0.2-0.5 Pa, the working temperature is 50-100 ℃, the rotation speed of the monocrystalline silicon carbide substrate is 5-30 DEG/s, and the applied negative bias is-50-100V; the sputtering power is 30-80W, and the sputtering time is 5-10 min;
in the fifth step, the sputtering condition is adjusted, after the Cu metal layer 3 is sputtered in the fourth step, a Ni target is mounted on the target base, and a radio frequency power supply is utilized to sputter on the monocrystalline silicon carbide substrate 1 to obtain a Ni metal layer 4; the sputtering process is divided into two stages, wherein in the first stage, the sputtering power is 100W, and the sputtering time is 3-4 min; secondly, the sputtering power is 80W, and the sputtering time is 5 min;
in the sixth step, after the sputtering of the Ni metal layer 4 in the sixth step is finished, an Au target is arranged on the target base, and then the sputtering of the Au metal layer 5 is finished on the monocrystalline silicon carbide substrate 1 by utilizing a radio frequency power supply; the sputtering power is 40-90W, and the sputtering time is 6-13 min;
in the seventh step, after the Au metal layer 5 in the sixth step is sputtered, a radio frequency power supply is used for sputtering on the monocrystalline silicon carbide substrate 1 to obtain a Pt metal layer 6; in the seventh step, the sputtering power is 40-100W, and the sputtering time is 7-15 min;
in the eighth step, after the sputtering of the Pt metal layer 6 in the seventh step is finished, a radio frequency power supply is utilized to sputter and deposit the Ausn welding layer 7 on the monocrystalline silicon carbide substrate 1, the sputtering power is 40-80W, and the sputtering time is 5-12min, so that the preparation of the Ti-Cu-Ni multilayer film taking the monocrystalline silicon carbide as the substrate is finished.
Based on the above, the invention has the advantages that the invention respectively sputters the Ti priming layer 2, the Ni metal layer 4, the Cu metal layer 3, the Au metal layer 5, the Pt metal layer 6 and the Ausn welding layer 7 on the single crystal silicon carbide substrate 1, the thickness of each layer can be artificially regulated and controlled by regulating the sputtering time and the sputtering power, the electric conductivity and the thermal conductivity of the single crystal silicon carbide substrate are favorably improved, and the single crystal silicon carbide substrate has excellent welding performance, on the other hand, the single crystal silicon carbide substrate 1 forms 30-60 degrees with the magnetic field direction, the uniformity of the whole coating of the single crystal silicon carbide substrate 1 is ensured by combining the rotation of the single crystal silicon carbide substrate 1, finally, a multilayer film with good thickness uniformity is prepared on the surface of the single crystal silicon carbide substrate 1, and when the Ni metal layer 3 is sputtered for 3-4min at 100W, then sputtered for 5min at 80W, a large amount of dispersed nucleation points are formed on the original coating by utilizing the large sputtering power, and then the growth speed of the film is controlled by using low sputtering power, an outer layer film with fine crystal grains and uniform microstructure is finally formed, the compactness and the adhesive force of the outermost plating layer are ensured, the welding difficulty is reduced, the welding adhesive force is enhanced, and the monocrystal silicon carbide plated with the Ti-Ni-Cu-Au-Pt-AuSn multilayer film is used as a substrate, so that the electric conductivity and the welding requirement can be met, compared with the same type of product, the heat conductivity is improved by 20%, the heat dissipation capacity is extremely high, and the heat dissipation requirement of a high-performance chip is met.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. A Ti-Cu-Ni multilayer film based on single crystal silicon carbide comprises a single crystal silicon carbide substrate (1), a Ti base layer (2), a Ni metal layer (4), a Cu metal layer (3), an Au metal layer (5), a Pt metal layer (6) and an Ausn welding layer (7), and is characterized in that: the single crystal silicon carbide substrate is characterized in that a Ti base layer (2) is sputtered on the top of the single crystal silicon carbide substrate (1) in a direct current mode, a Cu metal layer (3) is sputtered on the top of the Ti base layer (2) in a direct current mode, a Ni metal layer (4) is sputtered on the top of the Cu metal layer (3) in a direct current mode, an Au metal layer (5) is sputtered on the top of the Ni metal layer (4) in a direct current mode, a Pt metal layer (6) is sputtered on the top of the Au metal layer (5) in a direct current mode, and an Ausn welding layer (7) is deposited on the top of the Pt metal layer (6).
2. A preparation method of a Ti-Cu-Ni multilayer film taking single crystal silicon carbide as a base comprises the steps of firstly, preprocessing a substrate; step two, cleaning and drying; step three, sputtering a Ti layer; step four, sputtering a Ni layer; step five, sputtering a Cu layer; step six, sputtering an Au layer; step seven, sputtering a Pt layer; depositing an AuSn layer; the method is characterized in that:
in the first step, the monocrystalline silicon carbide substrate (1) is taken, and the surface of the monocrystalline silicon carbide substrate (1) is polished and polished by a polisher and a polishing machine respectively, so that the surface is kept smooth and clean for later use;
in the second step, the monocrystalline silicon carbide substrate (1) polished in the first step is put into an ultrasonic cleaning machine for cleaning, and is dried for later use by a dryer after cleaning;
in the third step, the single crystal silicon carbide substrate (1) cleaned in the second step is placed in a fixture for magnetron sputtering, a Ti target is arranged on a target base, the target distance is adjusted, then argon is introduced into a sputtering cavity for protection, then the single crystal silicon carbide substrate (1) is transferred into the sputtering cavity, the cavity is vacuumized, the single crystal silicon carbide substrate (1) and the magnetron sputtering magnetic field are ensured to be 30-60 degrees, and a direct current sputtering mode is adopted for sputtering to obtain a Ti base layer (2);
in the fourth step, the sputtering condition is adjusted, the included angle between the monocrystalline silicon carbide substrate (1) finished by sputtering the Ti base layer (2) in the third step and the magnetron sputtering magnetic field is kept, then a Cu target is arranged on the target base, and a Cu metal layer (3) is obtained by sputtering on the monocrystalline silicon carbide substrate (1) by utilizing a radio frequency power supply;
in the fifth step, the sputtering condition is adjusted, after the Cu metal layer (3) is sputtered in the fourth step, a Ni target is mounted on the target base, and a radio frequency power supply is utilized to sputter on the monocrystalline silicon carbide substrate (1) to obtain a Ni metal layer (4);
in the sixth step, after the Ni metal layer (4) in the sixth step is sputtered, an Au target is arranged on the target base, and then the Au metal layer (5) is sputtered on the monocrystalline silicon carbide substrate (1) by utilizing a radio frequency power supply;
in the seventh step, after the Au metal layer (5) in the sixth step is sputtered, a radio frequency power supply is used for sputtering on the monocrystalline silicon carbide substrate (1) to obtain a Pt metal layer (6);
in the eighth step, after the Pt metal layer (6) in the seventh step is sputtered, a radio frequency power supply is used for sputtering and depositing the Ausn welding layer (7) on the monocrystalline silicon carbide substrate (1), so that the preparation of the Ti-Cu-Ni multilayer film taking the monocrystalline silicon carbide as the substrate is completed.
3. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the second step, the time of ultrasonic cleaning is 30-60 s.
4. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the third step, the air pressure of the cavity is adjusted to be 10 by utilizing argon gas-3～10-2Pa。
5. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the third step, the vacuum degree is 10-5～10-4Pa。
6. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the fourth step, the sputtering condition is that the working air pressure is 0.2-0.5 Pa, the working temperature is 50-100 ℃, the rotation speed of the monocrystalline silicon carbide substrate is 5-30 DEG/s, and the applied negative bias is-50-100V.
7. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the fourth step, the sputtering power is 30-80W, and the sputtering time is 5-10 min.
8. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the eighth step, the sputtering power is 40-80W, and the sputtering time is 5-12 min.
9. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the sixth step, the sputtering power is 40-90W, and the sputtering time is 6-13 min.
10. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the seventh step, the sputtering power is 40-100W, and the sputtering time is 7-15 min.
11. The method for producing a single-crystal silicon carbide-based Ti-Cu-Ni multilayer film according to claim 2, characterized in that: in the fifth step, the sputtering process is divided into two stages, wherein in the first stage, the sputtering power is 100W, and the sputtering time is 3-4 min; secondly, the sputtering power is 80W, and the sputtering time is 5 min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114804930A (en) * | 2022-04-18 | 2022-07-29 | 苏州博志金钻科技有限责任公司 | Monocrystalline silicon carbide metallized composite ceramic chip for heat dissipation of high-power semiconductor device |
| CN115386848A (en) * | 2022-08-09 | 2022-11-25 | 中国科学院近代物理研究所 | Multi-target direct-current magnetron sputtering film coating device and application thereof in depositing ceramic substrate multilayer metal film |
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| CN111352180A (en) * | 2018-12-24 | 2020-06-30 | 深圳光峰科技股份有限公司 | Reflection structure, preparation method of reflection structure and wavelength conversion device |
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| CN106747675A (en) * | 2016-11-29 | 2017-05-31 | 浙江大学 | A kind of method of microwave-medium ceramics surface metalation |
| CN106602401A (en) * | 2017-02-28 | 2017-04-26 | 广东工业大学 | Heat sink used for high-power semiconductor laser and preparation method |
| CN111352180A (en) * | 2018-12-24 | 2020-06-30 | 深圳光峰科技股份有限公司 | Reflection structure, preparation method of reflection structure and wavelength conversion device |
| CN109487225A (en) * | 2019-01-07 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | Magnetron sputtering film formation device and method |
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| CN114804930A (en) * | 2022-04-18 | 2022-07-29 | 苏州博志金钻科技有限责任公司 | Monocrystalline silicon carbide metallized composite ceramic chip for heat dissipation of high-power semiconductor device |
| CN115386848A (en) * | 2022-08-09 | 2022-11-25 | 中国科学院近代物理研究所 | Multi-target direct-current magnetron sputtering film coating device and application thereof in depositing ceramic substrate multilayer metal film |
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