TWI824656B - Dressing disc and preparation method thereof, chemical mechanical polishing equipment - Google Patents

Dressing disc and preparation method thereof, chemical mechanical polishing equipment Download PDF

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TWI824656B
TWI824656B TW111129694A TW111129694A TWI824656B TW I824656 B TWI824656 B TW I824656B TW 111129694 A TW111129694 A TW 111129694A TW 111129694 A TW111129694 A TW 111129694A TW I824656 B TWI824656 B TW I824656B
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carbophilic
diamond particles
substrate
metal layer
trimming
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TW202245990A (en
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王垚
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大陸商西安奕斯偉材料科技股份有限公司
大陸商西安奕斯偉矽片技術有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0018Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by electrolytic deposition
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/14Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0054Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by impressing abrasive powder in a matrix
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009Tools not otherwise provided for
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/343Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

本發明提供了一種修整盤及其製備方法、化學機械拋光設備,屬於半導體技術領域。修整盤的製備方法,包括:在修整盤的基底表面進行親碳金屬元素的沉積,使得該親碳金屬元素與該基底之間發生金屬互擴散,在該基底表面形成親碳金屬層;利用電鍍或化學鍍方法在該親碳金屬層的表面塗覆金剛石顆粒。本發明的技術方案能夠有效提高金剛石顆粒與修整盤基底的結合強度,進而提高修整盤的使用壽命。The invention provides a trimming disk, a preparation method thereof, and chemical mechanical polishing equipment, and belongs to the field of semiconductor technology. The preparation method of the trimming disc includes: depositing a carbophilic metal element on the base surface of the trimming disc, causing metal interdiffusion to occur between the carbophilic metal element and the base, and forming a carbophilic metal layer on the base surface; using electroplating Or electroless plating method is used to coat diamond particles on the surface of the carbon-philic metal layer. The technical solution of the present invention can effectively improve the bonding strength between the diamond particles and the dressing disc base, thereby increasing the service life of the dressing disc.

Description

修整盤及其製備方法、化學機械拋光設備Dressing disc and preparation method thereof, chemical mechanical polishing equipment

本發明屬於半導體技術領域,特別是指一種修整盤及其製備方法、化學機械拋光設備。 The invention belongs to the field of semiconductor technology, and in particular refers to a trimming disk and a preparation method thereof, as well as chemical mechanical polishing equipment.

晶圓(wafer)作為半導體領域最基礎的材料,在其上可加工製作成各種電路元件結構,而成為有特定電性功能的積體電路產品。 As the most basic material in the semiconductor field, wafers can be processed into various circuit element structures and become integrated circuit products with specific electrical functions.

隨著半導體行業的發展,積體電路規模也不斷擴大,晶片廠商對基板片品質的要求越來越高。對於高品質的矽單晶拋光墊提出了更高要求,由於雙面拋光過程中,拋光墊(Pad)表面會因研磨殘留物導致其表面生成一定量的Glazing)(上釉;使光滑)現象,造成Pad表面的微孔被堵塞,使Wafer表面的研磨效率降低。 With the development of the semiconductor industry, the scale of integrated circuits has also continued to expand, and chip manufacturers have increasingly higher requirements for the quality of substrates. Higher requirements have been put forward for high-quality silicon single crystal polishing pads. During the double-sided polishing process, the polishing pad (Pad) surface will generate a certain amount of Glazing (glazing; smoothing) due to grinding residues. , causing the micropores on the Pad surface to be blocked, reducing the grinding efficiency of the Wafer surface.

採用高品質的化學機械拋光(Chemical Mechanical Polishing,CMP)修整盤進行Pad表面的修復是十分有必要的。由於金剛石具有最高硬度的優異性質,因此常利用金剛石進行Pad表面的修復,但是由於金剛石具有很高的介面能能和化學惰性,因此現有修整盤與表面的金剛石顆粒的結合性能很差,在高速旋轉時所帶來的巨大機械剪切力的作用下,金剛石顆粒很容易剝離掉落,導致目前CMP修整盤存在成本高,壽命短的缺點。 It is very necessary to use high-quality chemical mechanical polishing (CMP) dressing discs to repair the Pad surface. Because diamond has the highest hardness and excellent properties, diamond is often used to repair the pad surface. However, because diamond has high interfacial energy and chemical inertness, the bonding performance between the existing dressing disc and the diamond particles on the surface is very poor. At high speeds, Under the action of the huge mechanical shear force caused by rotation, the diamond particles are easily peeled off and fall off, resulting in the current CMP dressing discs having the disadvantages of high cost and short service life.

有鑑於此,本發明提供一種修整盤及其製備方法、化學機械拋光設備,能夠有效提高金剛石顆粒與修整盤基底的結合強度,進而提高修整盤的使用壽命。 In view of this, the present invention provides a dressing disc, a preparation method thereof, and chemical mechanical polishing equipment, which can effectively improve the bonding strength between diamond particles and the dressing disc base, thereby increasing the service life of the dressing disc.

為解決上述技術問題,本發明採用以下技術方案:本發明一方面實施例提供一種修整盤的製備方法,包括:一些實施例中,該親碳金屬元素採用鉭、鈦、鎢或鉿。 In order to solve the above technical problems, the present invention adopts the following technical solutions: In one aspect, embodiments of the present invention provide a method for preparing a dressing disk, including: In some embodiments, the carbophilic metal element is tantalum, titanium, tungsten or hafnium.

一些實施例中,在修整盤的基底表面進行親碳金屬元素的沉積包括:利用雙輝等離子體表面冶金DGPSA步驟在該基底的表面進行親碳金屬元素的沉積。 In some embodiments, depositing carbophilic metal elements on the surface of the substrate of the trimming disk includes: using a double-glow plasma surface metallurgy DGPSA step to deposit carbophilic metal elements on the surface of the substrate.

一些實施例中,該DGPSA步驟中,沉積溫度從400-900℃等梯度變化,沉積壓力為30-40Pa,保護氣體為氬氣。 In some embodiments, in the DGPSA step, the deposition temperature changes from 400 to 900° C., the deposition pressure is 30 to 40 Pa, and the protective gas is argon.

一些實施例中,利用電鍍或化學鍍方法在該親碳金屬層的表面塗覆金剛石顆粒之後,該方法還包括:對塗覆有金剛石顆粒的該基底進行退火步驟處理。 In some embodiments, after electroplating or chemical plating is used to coat diamond particles on the surface of the carbophilic metal layer, the method further includes: performing an annealing step on the substrate coated with diamond particles.

一些實施例中,該退火步驟中,溫度從600-900℃等梯度變化。 In some embodiments, in the annealing step, the temperature changes in an equal gradient from 600 to 900°C.

一些實施例中,該基底採用304不銹鋼。 In some embodiments, the substrate is made of 304 stainless steel.

一些實施例中,該親碳金屬層的厚度為0.8-1.5μm。 In some embodiments, the thickness of the carbophilic metal layer is 0.8-1.5 μm .

本發明實施例還提供了一種修整盤,採用如上所述的製備方法製作得到。 An embodiment of the present invention also provides a trimming disk, which is produced using the above preparation method.

本發明實施例還提供了一種化學機械拋光設備,包括如上所述的修整盤。 An embodiment of the present invention also provides a chemical mechanical polishing equipment, including the dressing disk as described above.

本發明上述技術方案的有益效果如下:根據本發明實施例的修整盤的製備方法,在修整盤的基底表面進行親碳金屬元素的沉積,使得親碳金屬元素與基底之間發生金屬互擴散,在基底表面形成親碳金屬層,親碳金屬元素可以緊密的與基底進行結合。之後,利用電鍍或化學鍍方法在親碳金屬層的表面塗覆金剛石顆粒,金剛石顆粒與親碳金屬層的結合性能較好,從而可以使得金剛石顆粒與修整盤的基底結合性能更優,金剛石顆粒不容易剝離掉落,提高修整盤的使用壽命。 The beneficial effects of the above technical solutions of the present invention are as follows: According to the preparation method of the dressing disc according to the embodiment of the present invention, carbon-philic metal elements are deposited on the substrate surface of the dressing disc, so that metal interdiffusion occurs between the carbon-philic metal elements and the substrate. A carbophilic metal layer is formed on the surface of the substrate, and the carbophilic metal elements can be tightly combined with the substrate. After that, electroplating or chemical plating is used to coat diamond particles on the surface of the carbophilic metal layer. The bonding performance between the diamond particles and the carbophilic metal layer is better, which can make the bonding performance between the diamond particles and the base of the dressing disc better. The diamond particles It is not easy to peel off and fall off, extending the service life of the trimming disc.

1:基底 1: Base

2:親碳金屬層 2: Carbophilic metal layer

3:金剛石顆粒 3:Diamond particles

S101-S102:步驟 S101-S102: Steps

圖1為本發明實施例提供的修整盤的製備方法的流程示意圖;圖2為本發明實施例提供的修整盤的結構示意圖。 FIG. 1 is a schematic flowchart of a method for preparing a trimming disk according to an embodiment of the present invention; FIG. 2 is a schematic structural diagram of a trimming disk according to an embodiment of the present invention.

為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效,茲將本發明配合附圖及附件,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍,合先敘明。 In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.

在本發明實施例的描述中,需要理解的是,術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“豎直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明實施例和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。 In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" ", "horizontal", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience and simplicity in describing the embodiments of the present invention. The description does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore is not to be construed as a limitation of the invention.

此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多所述特徵。在本發明實施例的描述中,“多個”的含義是兩個或兩個以上,除非另有明確具體的限定。 In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.

在本發明實施例中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言,可以根據具體情況理解上述術語在本發明實施例中的具體含義。 In the embodiments of the present invention, unless otherwise expressly stipulated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a removable connection. Disassembly and connection, or integration; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

本發明實施例提供一種修整盤及其製備方法、化學機械拋光設備,能夠有效提高金剛石顆粒與修整盤基底的結合強度,進而提高修整盤的使用壽命。 Embodiments of the present invention provide a dressing disc, a preparation method thereof, and chemical mechanical polishing equipment, which can effectively improve the bonding strength between diamond particles and the dressing disc base, thereby increasing the service life of the dressing disc.

本發明實施例提供一種修整盤的製備方法,如圖1和圖2所示,包括: S101:在修整盤的基底表面進行親碳金屬元素的沉積,使得該親碳金屬元素與該基底之間發生金屬互擴散,在該基底表面形成親碳金屬層;S102:利用電鍍或化學鍍方法在該親碳金屬層的表面塗覆金剛石顆粒。 An embodiment of the present invention provides a method for preparing a trimming disk, as shown in Figures 1 and 2, including: S101: Deposit a carbophilic metal element on the substrate surface of the trimming disk, causing metal interdiffusion to occur between the carbophilic metal element and the substrate, and forming a carbophilic metal layer on the substrate surface; S102: Using electroplating or electroless plating methods Diamond particles are coated on the surface of the carbon-philic metal layer.

本實施例中,在修整盤的基底1表面進行親碳金屬元素的沉積,使得親碳金屬元素與基底1之間發生金屬互擴散,在基底1表面形成親碳金屬層2,親碳金屬元素可以緊密的與基底1進行結合。之後,利用電鍍或化學鍍方法在親碳金屬層2的表面塗覆金剛石顆粒3,金剛石顆粒3與親碳金屬層2的結合性能較好,從而可以使得金剛石顆粒3與修整盤的基底1結合性能更優,金剛石顆粒3不容易剝離掉落,提高修整盤的使用壽命。 In this embodiment, a carbon-philic metal element is deposited on the surface of the substrate 1 of the trimming disk, causing metal interdiffusion to occur between the carbon-philic metal element and the substrate 1, and a carbon-philic metal layer 2 is formed on the surface of the substrate 1. The carbon-philic metal element Can be tightly combined with the base 1. After that, electroplating or chemical plating is used to coat diamond particles 3 on the surface of the carbophilic metal layer 2. The diamond particles 3 have better bonding properties with the carbophilic metal layer 2, so that the diamond particles 3 can be combined with the base 1 of the dressing disk. The performance is better, the diamond particles 3 are not easy to peel off and fall off, extending the service life of the dressing disc.

其中,金剛石顆粒3的目數可以根據需要確定。如果需要對拋光墊進行精磨,則選擇粒徑較小的金剛石顆粒3;如果需要對拋光墊進行粗磨,則選擇粒徑較大的金剛石顆粒3。 Among them, the mesh number of the diamond particles 3 can be determined as needed. If the polishing pad needs to be finely ground, select diamond particles 3 with a smaller particle size; if the polishing pad needs to be roughly ground, select diamond particles 3 with a larger particle size.

本實施例中,採用化學鍍或電鍍的方式在親碳金屬層2的表面進行需求目數的金剛石顆粒3的塗層處理,使得金剛石顆粒3可以有效地形成在親碳金屬層2的表面,金剛石顆粒3可以有效地與親碳金屬層2形成一定的碳化物,使得金剛石顆粒3與基底1的結合性能更優,延長修整盤的使用壽命;並且金剛石顆粒3能夠均勻的分佈在基底1表面,達到極佳的研磨效果。 In this embodiment, electroless plating or electroplating is used to coat diamond particles 3 with a required mesh size on the surface of the carbon-philic metal layer 2, so that the diamond particles 3 can be effectively formed on the surface of the carbon-philic metal layer 2. The diamond particles 3 can effectively form certain carbides with the carbophilic metal layer 2, so that the bonding performance between the diamond particles 3 and the substrate 1 is better, extending the service life of the dressing disk; and the diamond particles 3 can be evenly distributed on the surface of the substrate 1 , to achieve excellent grinding effect.

一些實施例中,該親碳金屬元素可以採用鉭、鈦、鎢或鉿。當然,親碳金屬元素並不局限於採用鉭、鈦、鎢或鉿,還可以採用其他容易與碳結合的金屬元素。 In some embodiments, the carbophilic metal element may be tantalum, titanium, tungsten or hafnium. Of course, the carbon-loving metal element is not limited to tantalum, titanium, tungsten or hafnium, and other metal elements that are easy to combine with carbon can also be used.

一些實施例中,在修整盤的基底表面進行親碳金屬元素的沉積包括: 利用雙輝等離子體表面冶金(DGPSA)步驟在該基底的表面進行親碳金屬元素的沉積。 In some embodiments, depositing the carbophilic metal element on the substrate surface of the conditioning disk includes: The carbon-philic metal element is deposited on the surface of the substrate using a double-glow plasma surface metallurgy (DGPSA) step.

本實施例中,採用雙輝等離子表面冶金步驟對基底表面進行金屬化處理,使得沉積的金屬與基底之間能夠發生金屬互擴散,進行冶金結合,以便親碳金屬元素與基底緊密地結合在一起。 In this embodiment, a double-glow plasma surface metallurgy step is used to metallize the surface of the substrate, so that metal interdiffusion can occur between the deposited metal and the substrate, and metallurgical bonding is performed so that the carbophilic metal elements and the substrate are closely combined. .

一些實施例中,該DGPSA步驟中,沉積溫度從400-900℃等梯度變化,沉積壓力為30-40Pa,保護氣體為氬氣。 In some embodiments, in the DGPSA step, the deposition temperature changes from 400 to 900° C., the deposition pressure is 30 to 40 Pa, and the protective gas is argon.

即沉積溫度在400-900℃的範圍內等梯度變化,比如沉積溫度保持在400℃一段時間,之後保持在500℃一段時間,然後保持在600℃一段時間,保持在700℃一段時間,保持在800℃一段時間,最後保持在900℃一段時間,保持在某一溫度值或某一溫度區間的時間可以根據需要設置。 That is, the deposition temperature changes in an equal gradient within the range of 400-900°C. For example, the deposition temperature is maintained at 400°C for a period of time, then at 500°C for a period of time, then at 600°C for a period of time, at 700°C for a period of time, and at 800℃ for a period of time, and finally keep at 900℃ for a period of time. The time to keep at a certain temperature value or a certain temperature range can be set as needed.

一些實施例中,利用電鍍或化學鍍方法在該親碳金屬層的表面塗覆金剛石顆粒之後,該方法還包括:對塗覆有金剛石顆粒的該基底進行退火步驟處理。進行退火步驟處理的目的是為了使得金剛石顆粒可以與親碳金屬層之間形成碳化物,有利於金剛石顆粒與基底的結合性能更優。 In some embodiments, after electroplating or chemical plating is used to coat diamond particles on the surface of the carbophilic metal layer, the method further includes: performing an annealing step on the substrate coated with diamond particles. The purpose of the annealing step is to enable carbides to be formed between the diamond particles and the carbophilic metal layer, which is conducive to better bonding performance between the diamond particles and the substrate.

一些實施例中,該退火步驟中,步驟溫度從600-900℃等梯度變化。即步驟溫度在600-900℃的範圍內等梯度變化,比如保持在600℃一段時間,之後保持在700℃一段時間,然後保持在800℃一段時間,最後保持在900℃一段時間,保持在某一溫度值或某一溫度區間的時間可以根據需要設置。 In some embodiments, in the annealing step, the step temperature changes in an equal gradient from 600 to 900°C. That is, the step temperature changes in an equal gradient within the range of 600-900°C, such as keeping it at 600°C for a period of time, then keeping it at 700°C for a period of time, then keeping it at 800°C for a period of time, and finally keeping it at 900°C for a period of time, and then keeping it at a certain temperature. A temperature value or a time in a certain temperature range can be set as needed.

一些實施例中,該基底採用304不銹鋼。採用304不銹鋼作為基底有利於增強金剛石顆粒與修整盤之間的結合力,延長修整盤的研磨壽命。當然,基底並不局限於採用304不銹鋼,還可以採用其他具有一定硬度的材質。 In some embodiments, the substrate is made of 304 stainless steel. Using 304 stainless steel as the base is beneficial to enhancing the bonding force between the diamond particles and the dressing disc, and extending the grinding life of the dressing disc. Of course, the base is not limited to 304 stainless steel, but can also be made of other materials with a certain hardness.

一些實施例中,該親碳金屬層的厚度為0.8-1.5μm,這樣可以使得親碳金屬層有效地與金剛石顆粒形成一定的碳化物,使得金剛石顆粒與基底的結合性能更優。 In some embodiments, the thickness of the carbophilic metal layer is 0.8-1.5 μm , which allows the carbophilic metal layer to effectively form certain carbides with the diamond particles, so that the bonding performance between the diamond particles and the substrate is better.

一具體實施例中,在親碳金屬層採用Ti時,該在修整盤的基底表面進行親碳金屬元素的沉積包括:利用雙輝等離子體表面冶金DGPSA步驟在基底表面進行Ti層的沉積。 In a specific embodiment, when Ti is used as the carbophilic metal layer, the deposition of the carbophilic metal element on the substrate surface of the trimming disk includes: using a double-glow plasma surface metallurgy DGPSA step to deposit a Ti layer on the substrate surface.

具體地,該DGPSM步驟中,源極採用絲狀靶材,沉積溫度為700-900℃,沉積壓力為30-40Pa,保護氣體為氬氣。該絲狀靶材可以由純度為99.999%的Ti絲均勻地固定在不銹鋼板上製備而成,該Ti絲的尺寸為Φ3.5mm×20mm,該不銹鋼板的尺寸為55mm×55mm×3.0mm,通過控制沉積時間控制親碳金屬層的厚度為0.8-1.5μm。絲狀Ti靶能夠在Ti絲尖端形成較高的電荷密度,提高Ti原子的濺射效率。 Specifically, in this DGPSM step, a filamentous target is used as the source, the deposition temperature is 700-900°C, the deposition pressure is 30-40Pa, and the protective gas is argon. The filament target can be prepared by uniformly fixing Ti wire with a purity of 99.999% on a stainless steel plate. The size of the Ti wire is Φ3.5mm×20mm, and the size of the stainless steel plate is 55mm×55mm×3.0mm. The thickness of the carbophilic metal layer is controlled to 0.8-1.5 μm by controlling the deposition time. The wire-shaped Ti target can form a higher charge density at the tip of the Ti wire and improve the sputtering efficiency of Ti atoms.

本發明實施例還提供了一種修整盤,採用如上所述的製備方法製作得到。 An embodiment of the present invention also provides a trimming disk, which is produced using the above preparation method.

本實施例的修整盤的截面圖如圖2所示,修整盤包括基底1、位於基底1表面的親碳金屬層2和位於親碳金屬層2的表面的金剛石顆粒3。 The cross-sectional view of the dressing disk of this embodiment is shown in Figure 2. The dressing disk includes a substrate 1, a carbon-philic metal layer 2 located on the surface of the substrate 1, and diamond particles 3 located on the surface of the carbon-philic metal layer 2.

本實施例中,在修整盤的基底表面進行親碳金屬元素的沉積,使得親碳金屬元素與基底之間發生金屬互擴散,在基底表面形成親碳金屬層,親碳金屬元素可以緊密的與基底進行結合。之後,利用電鍍或化學鍍方法在親碳金屬 層的表面塗覆金剛石顆粒,金剛石顆粒與親碳金屬層的結合性能較好,從而可以使得金剛石顆粒與修整盤的基底結合性能更優,金剛石顆粒不容易剝離掉落,提高修整盤的使用壽命。 In this embodiment, carbophilic metal elements are deposited on the substrate surface of the trimming disk, causing metal interdiffusion to occur between the carbophilic metal elements and the substrate. A carbophilic metal layer is formed on the substrate surface, and the carbophilic metal elements can closely interact with the substrate. The base is combined. After that, electroplating or electroless plating is used to coat the carbon-loving metal The surface of the layer is coated with diamond particles. The bonding performance between the diamond particles and the carbophilic metal layer is better, which can make the bonding performance between the diamond particles and the base of the dressing disc better. The diamond particles are not easy to peel off and fall off, which increases the service life of the dressing disc. .

本發明實施例還提供了一種化學機械拋光設備,包括如上所述的修整盤。本實施例的修整盤中,金剛石顆粒與親碳金屬層的結合性能較好,從而可以使得金剛石顆粒與修整盤的基底結合性能更優,金剛石顆粒不容易剝離掉落,提高修整盤的使用壽命。 An embodiment of the present invention also provides a chemical mechanical polishing equipment, including the dressing disk as described above. In the dressing disk of this embodiment, the bonding performance of the diamond particles and the carbophilic metal layer is better, which can make the bonding performance of the diamond particles and the base of the dressing disk better, and the diamond particles are not easy to peel off, which improves the service life of the dressing disk. .

以上僅為本發明之較佳實施例,並非用來限定本發明之實施範圍,如果不脫離本發明之精神和範圍,對本發明進行修改或者等同替換,均應涵蓋在本發明申請專利範圍的保護範圍當中。 The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.

1:基底 1: Base

2:親碳金屬層 2: Carbophilic metal layer

3:金剛石顆粒 3:Diamond particles

Claims (8)

一種修整盤的製備方法,包括:在修整盤的基底表面進行親碳金屬元素的沉積,使得該親碳金屬元素與該基底之間發生金屬互擴散,在該基底表面形成親碳金屬層;利用電鍍或化學鍍方法在該親碳金屬層的表面塗覆金剛石顆粒;該在修整盤的基底表面進行親碳金屬元素的沉積,包括:利用雙輝等離子體表面冶金(DGPSA)步驟在該基底的表面進行親碳金屬元素的沉積;該DGPSA步驟中,沉積溫度從400-900℃等梯度變化,沉積壓力為30-40Pa,保護氣體為氬氣。 A method for preparing a trimming disc, including: depositing a carbon-philic metal element on the surface of a trimming disc base, causing metal interdiffusion to occur between the carbon-philic metal element and the substrate, and forming a carbon-philic metal layer on the surface of the substrate; utilizing The electroplating or electroless plating method is used to coat diamond particles on the surface of the carbophilic metal layer; the deposition of carbophilic metal elements on the substrate surface of the trimming disk includes: using a double glow plasma surface metallurgy (DGPSA) step to deposit on the substrate. Carbophilic metal elements are deposited on the surface; in this DGPSA step, the deposition temperature changes from 400 to 900°C in equal gradients, the deposition pressure is 30-40 Pa, and the protective gas is argon. 如請求項1所述之修整盤的製備方法,其中,該親碳金屬元素採用鉭、鈦、鎢或鉿。 The method for preparing a trimming disk according to claim 1, wherein the carbophilic metal element is tantalum, titanium, tungsten or hafnium. 如請求項1或2所述之修整盤的製備方法,其中,利用電鍍或化學鍍方法在該親碳金屬層的表面塗覆金剛石顆粒之後,該方法還包括:對塗覆有金剛石顆粒的該基底進行退火步驟處理。 The method for preparing a dressing disk as claimed in claim 1 or 2, wherein, after coating diamond particles on the surface of the carbophilic metal layer using an electroplating or electroless plating method, the method further includes: coating the surface of the carbophilic metal layer with diamond particles. The substrate undergoes an annealing step. 如請求項3所述之修整盤的製備方法,其中,該退火步驟中,溫度從600-900℃等梯度變化。 The preparation method of the trimming disk as described in claim 3, wherein in the annealing step, the temperature changes in an equal gradient from 600 to 900°C. 如請求項1所述之修整盤的製備方法,其中,該基底採用304不銹鋼。 The preparation method of the dressing disk as described in claim 1, wherein the base is made of 304 stainless steel. 如請求項1所述之修整盤的製備方法,其中,該親碳金屬層的厚度 為0.8-1.5μm。 The method for preparing a trimming disk as claimed in claim 1, wherein the thickness of the carbophilic metal layer is 0.8-1.5 μm . 一種修整盤,採用如請求項1至6中任一項所述之修整盤的製備方法製作得到。 A trimming disk is produced by the preparation method of the trimming disk described in any one of claims 1 to 6. 一種化學機械拋光設備,包括如請求項7所述之修整盤。 A chemical mechanical polishing equipment, including the dressing disk as described in claim 7.
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