CN113161378A - Image sensing chip packaging structure and packaging method - Google Patents
Image sensing chip packaging structure and packaging method Download PDFInfo
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- CN113161378A CN113161378A CN202110500244.6A CN202110500244A CN113161378A CN 113161378 A CN113161378 A CN 113161378A CN 202110500244 A CN202110500244 A CN 202110500244A CN 113161378 A CN113161378 A CN 113161378A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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Abstract
The invention provides an image sensing chip packaging structure and a packaging method, wherein the packaging structure comprises: the image sensing chip is provided with a first surface and a second surface which are opposite, and a photosensitive area is arranged on the first surface of the image sensing chip; the supporting dam is arranged on the first surface of the image sensing chip, surrounds the periphery of the photosensitive area, and is provided with an inner wall surface facing the photosensitive area and an outer wall surface opposite to the inner wall surface; the transparent cover plate is covered on the supporting dam and forms a closed cavity for accommodating the light sensing area together with the supporting dam; at least, be provided with the light-absorbing layer on supporting the dam inner wall, the light-absorbing layer can be with incidenting the light absorption on supporting the dam inner wall to avoid it to further reflect to the sensitization district and cause the interference to the sensitization district, reduced the influence of stray light to image direct light, improved the formation of image effect.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an image sensing chip packaging structure and a packaging method.
Background
With the development of light and shadow technologies such as photographing and shooting, the image sensing chip can be used in a camera of an electronic product as a functional image sensing chip capable of converting a received optical signal into an electrical signal, and has huge market demands. The prior image sensing chip packaging structure generally comprises a chip and a transparent glass cover plate for protecting a chip photosensitive area, wherein the transparent glass cover plate is suspended on the chip photosensitive area through a supporting structural member, the transparent glass cover plate and the supporting structural member jointly form a closed cavity for accommodating the chip photosensitive area, however, when part of stray light sources are obliquely incident into the inner wall surface of the supporting structural member, the stray light sources can be further reflected to the chip photosensitive area, the interference to the photosensitive area is caused, and therefore the image imaging effect is achieved.
Disclosure of Invention
The invention aims to provide an image sensing chip packaging structure and a packaging method.
The invention provides an image sensing chip packaging structure, comprising:
the image sensing chip is provided with a first surface and a second surface which are opposite, and a photosensitive area is arranged on the first surface of the image sensing chip;
the supporting dam is arranged on the first surface of the image sensing chip, surrounds the periphery of the photosensitive area, and is provided with an inner wall surface facing the photosensitive area and an outer wall surface opposite to the inner wall surface;
the transparent cover plate is covered on the supporting dam and forms a closed cavity for accommodating the light sensing area together with the supporting dam;
and a light absorption layer is arranged on at least the inner wall surface of the supporting dam.
As a further improvement of the invention, the light absorbing layer extending inwards along the transparent cover plate surface is arranged at the joint of the transparent cover plate and the inner wall surface of the supporting dam, and the light absorbing layer at least exposes the light sensing area.
As a further improvement of the present invention, the light absorbing layer is disposed at a junction of the supporting dam and the image sensing chip.
As a further improvement of the present invention, the light absorbing layer is a black ink coating.
As a further improvement of the present invention, the image sensor chip includes a first bonding pad located outside the photosensitive region, and the supporting dam is disposed in a region between the first bonding pad and the photosensitive region.
As a further improvement of the present invention, the package structure further includes a substrate and a plastic package layer, the substrate includes a first surface and a second surface opposite to each other, the image sensing chip is disposed on the first surface of the substrate, the first pad is electrically connected to the second pad disposed on the first surface of the substrate, and the plastic package layer covers the substrate, the image sensing chip, the supporting dam and the transparent cover plate and at least exposes a region of the transparent cover plate above the photosensitive region.
The invention also provides a packaging method of the image sensing chip, which comprises the following steps:
providing an image sensing chip and a transparent cover plate;
manufacturing a supporting dam in a frame structure on one surface of the transparent cover plate, and forming a light absorption layer on at least the inner wall surface of the supporting dam;
and pressing one surface of the transparent cover plate, on which the supporting dam is formed, with the image sensing chip to enable the supporting dam to surround the photosensitive area of the image sensing chip.
As a further improvement of the present invention, "providing an image sensing chip and a transparent cover" specifically includes:
providing a wafer, and forming a plurality of regularly arranged image sensing chips on the wafer;
and providing a wafer-level transparent substrate, wherein the transparent substrate is used for cutting to form a single transparent cover plate.
As a further improvement of the present invention, the "manufacturing a supporting dam in a frame structure on one side of the transparent cover plate" specifically includes:
and manufacturing a supporting dam on the transparent substrate corresponding to the region between the photosensitive regions of the adjacent image sensing chips on the wafer.
As a further improvement of the present invention, "forming a light absorbing layer at least on the inner wall surface of the support dam" specifically includes:
spraying a layer of black paint on the surface of the supporting dam;
and exposing and developing to expose the black coating at least in the area corresponding to the photosensitive area of the image sensing chip.
As a further improvement of the present invention, the step of pressing the surface of the transparent cover plate on which the supporting dam is formed with the image sensing chip specifically includes:
pressing one surface of the transparent substrate on which the supporting dam is formed with the wafer;
removing part of the supporting dam covering the wafer cutting channel, exposing out a first welding pad of the image sensing chip positioned at the outer side of the photosensitive area, dividing the wafer-level transparent substrate into a plurality of transparent cover plates, covering the transparent cover plates above the photosensitive area, and dividing the supporting dam into a single frame structure surrounding the periphery of the photosensitive area;
and cutting the wafer along the cutting path to form a single image sensing chip.
As a further improvement of the present invention, after the wafer is diced to form the single image sensing chip, the method further comprises the steps of:
providing a substrate, arranging the image sensing chip on a first surface of the substrate, and electrically connecting the first welding pad with a second welding pad arranged on the first surface of the substrate;
filling plastic packaging materials to carry out plastic packaging on the substrate, the image sensing chip, the supporting dam and the transparent cover plate, and at least exposing the area of the transparent cover plate above the photosensitive area;
arranging a welding bulge on a second surface of the substrate opposite to the first surface of the substrate;
and cutting the substrate to form a single packaging structure.
The invention has the beneficial effects that: the black light absorbing layer is arranged on the inner wall surface of the supporting dam for supporting the transparent cover plate in the image sensing chip packaging structure, so that light incident on the inner wall surface of the supporting dam can be absorbed, the interference of the light incident on the supporting dam to the light sensing area due to the fact that the light incident on the inner wall surface of the supporting dam is further reflected to the light sensing area is avoided, the influence of stray light on image direct light is reduced, and the imaging effect is improved.
Drawings
Fig. 1 is a schematic view of an image sensor chip package structure according to an embodiment of the invention.
Fig. 2 is a flowchart illustrating a method for packaging an image sensor chip according to an embodiment of the invention.
Fig. 3 to 9 are schematic diagrams illustrating steps of a method for packaging an image sensor chip according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the technical solutions of the present application will be clearly and completely described below with reference to the detailed description of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
For convenience in explanation, the description herein uses terms indicating relative spatial positions, such as "upper," "lower," "rear," "front," and the like, to describe one element or feature's relationship to another element or feature as illustrated in the figures. The term spatially relative position may encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
As shown in fig. 1, the present invention provides an image sensor chip package structure, including: the image sensor comprises a substrate 1, an image sensing chip 2, a supporting dam 3, a transparent cover plate 4 and a plastic package layer 5.
The image sensing chip 2 has a first surface and a second surface opposite to each other, a light sensing area 21 and a first bonding pad 22 located outside the light sensing area 21 and spaced from the light sensing area by a distance are arranged on the first surface of the image sensing chip, and the first bonding pad 22 is electrically coupled with the light sensing area 21.
The light sensing region 21 may include a plurality of photodiode array arrangements for converting optical signals irradiated to the light sensing region 21 into electrical signals. The first pads 22 serve as input and output terminals for devices within the photosensitive region 21 to connect to external circuitry. In other embodiments of the present invention, other electronic components may be further disposed on the image sensor chip 2, which is not limited in the present invention.
The supporting dam 3 is disposed on the first surface of the image sensor chip 2, surrounds the periphery of the photosensitive region 21, and is located in a region between the first bonding pad 22 and the photosensitive region 21. The supporting dam 3 is made of an insulating dielectric material such as photoresist, silicon oxide, silicon nitride, silicon oxynitride, etc. and is used for supporting the transparent cover plate 4.
An adhesive layer is arranged between the supporting dam 3 and the image sensing chip 2 for fixing the two and sealing the two, and the adhesive layer can be a high-molecular adhesive material, such as a polymer material like silica gel, epoxy resin, benzocyclobutene, etc.
Further, a light absorbing layer 31 is provided at least on the inner wall surface of the support dam 3.
Specifically, in the present embodiment, the light absorbing layer 31 is a black ink coating, and the light absorbing layer 31 formed on the inner wall surface of the supporting dam 3 can absorb light incident on the inner wall surface of the supporting dam 3, so as to prevent the light from further incident on the photosensitive area 21 to interfere with the photosensitive area 21, thereby affecting the imaging effect. In other embodiments of the present invention, other light absorbing materials may be used as the light absorbing layer 31 as long as they can absorb light.
Further, in the junction of the inner wall of the transparent cover plate 4 and the supporting dam 3, a light absorption layer 31 extending inwards along the transparent cover plate 4 is arranged, the light absorption layer 31 at least exposes the photosensitive area 21, the light absorption layer 31 is arranged in the edge area of the transparent cover plate 4, and the light absorption layer 31 is arranged in the partial area of the transparent cover plate 4 not directly covering the photosensitive area 21, so that the light absorption layer 31 can further enhance the absorption effect on the stray light on the premise of not influencing the effective direct light, and the interference problem of the stray light is reduced.
Further, the light absorbing layer 31 is disposed at the interface between the supporting dam 3 and the image sensing chip 2, and since the supporting dam 3 for chip packaging size level exhibits a certain transparency, the light absorbing layer 31 disposed therein can absorb the light incident on the bottom surface of the supporting dam 3, thereby preventing the light from being further reflected into the sealed cavity to affect the direct light.
The substrate 1 comprises a first surface and a second surface which are opposite to each other, the image sensing chip 2 is arranged on the first surface of the substrate 1, the first welding pad 22 is electrically connected with the second welding pad 12 arranged on the first surface of the substrate 1, and the image sensing chip 2 is electrically conducted with the substrate 1 through a metal welding wire.
The second surface of the substrate 1 is provided with a solder bump 11 such as a solder ball for electrical connection with the outside.
In other embodiments of the present invention, an electrical connector such as a solder ball may be disposed on the back surface of the image sensor chip 2, a conductive structure such as a through silicon via is formed therein to electrically connect the photosensitive region 21 and the electrical connector, and the image sensor chip 2 and the substrate 1 are electrically connected by flip-chip method.
The plastic package layer 5 covers the substrate 1, the image sensing chip 2, the supporting dam 3 and the transparent cover plate 4, and at least exposes the region of the transparent cover plate 4 above the photosensitive region 21. The molding compound can be polymer composite materials such as epoxy resin, polyimide, dry film and the like, and the molding layer 5 provides physical support for the packaging structure and plays a role in sealing and protecting the image sensing chip 2, the substrate 1 and the bonding wires.
As shown in fig. 2, the present invention further provides a method for packaging an image sensor chip 2, which includes the steps of:
s1: an image sensing chip 2 and a transparent cover plate 4 are provided.
S2: a supporting dam 3 having a frame structure is formed on one surface of a transparent cover plate 4, and a light absorbing layer 31 is formed at least on the inner wall surface of the supporting dam 3.
S3: the surface of the transparent cover plate 4 on which the supporting dam 3 is formed is pressed with the image sensing chip 2, so that the supporting dam 3 surrounds the photosensitive area 21 of the image sensing chip 2.
Furthermore, the invention adopts a 2 wafer level packaging method of the image sensing chip.
As shown in fig. 3, in step S1, it specifically includes:
providing a wafer a, forming a plurality of regularly arranged image sensing chips 2 on the wafer a, and forming cutting channels between adjacent image sensing chips 2. After the wafer is packaged, the wafer is cut along the cutting channels, so that a plurality of image sensing chip packaging structures can be formed.
It should be noted that the dicing channel is only a margin area reserved between the two image sensor chips 2 for dicing, and there is no actual boundary line between the dicing channel and the image sensor chips 2 on both sides.
As shown in fig. 4, a transparent substrate b at wafer level is provided, which is cut to form a single transparent cover plate 4.
In step S2, the step of forming the supporting dam 3 having a frame structure on one surface of the transparent cover plate 4 specifically includes:
In some embodiments of the present invention, the supporting dam 3 is made of a photosensitive resist, a photosensitive resist coating is formed on the transparent substrate by a process such as spraying or spin coating, and then the photosensitive resist coating is patterned by exposure and development, so as to form the supporting dams 3 arranged in an array in a predetermined area. In other embodiments of the present invention, the material of the supporting dam 3 may also be an insulating dielectric material such as silicon oxide, silicon nitride, silicon oxynitride, etc., and is formed by a deposition process, and then patterned by a photolithography process and an etching process to form the supporting dams 3 arranged in an array in a specified region.
As shown in fig. 5, "forming the light absorbing layer 31 at least on the inner wall surface of the support dam 3" specifically includes:
and spraying a layer of black paint on the surface of the supporting dam 3.
And exposing and developing, namely performing graphical treatment on the black coating completely coated on the surface of the supporting dam 3, so that the black coating at least exposes the area corresponding to the photosensitive area 21 of the image sensing chip 2.
Specifically, in the present embodiment, the black paint is a black ink.
As shown in fig. 6 and 7, in step S3, it specifically includes:
s31: the surface of the transparent substrate on which the supporting dam 3 is formed is pressed against the wafer a.
In some embodiments of the present invention, the support dam 3 and the wafer a may be pressed into alignment by an adhesive layer. An adhesive layer is formed on the upper surface of the support dam 3 or a limited area on the wafer by a screen printing or spin coating process, and then the support dam 3 and the wafer a are aligned and pressed and bonded by the adhesive layer.
S32: removing part of the supporting dam 3 covering the wafer dicing channel, exposing the first welding pad 22 of the image sensing chip 2 positioned at the outer side of the light sensing area 21, dividing the wafer-level transparent substrate b into a plurality of transparent cover plates 4, covering the transparent cover plates 4 above the light sensing area 21, and dividing the supporting dam 3 into a single frame structure surrounding the periphery of the light sensing area 21.
In different embodiments, there are various structures for implementing the supporting dam 3 on the transparent substrate, and a portion of the supporting dam 3 covering the scribe line is removed by cutting or by a process of cutting before etching according to different structures of the supporting dam 3.
As shown in fig. 8, S34: and cutting the wafer along the cutting lines to form single image sensing chips 2.
As shown in fig. 9, after step S3, the method further includes the steps of:
providing a substrate 1, disposing the image sensing chip 2 on a first surface of the substrate 1, and electrically connecting the first bonding pad 22 with the second bonding pad 12 disposed on the first surface of the substrate 1;
filling plastic packaging materials to carry out plastic packaging on the substrate 1, the image sensing chip 2, the supporting dam 3 and the transparent cover plate 4, and exposing at least the area of the transparent cover plate 4 above the photosensitive area 21;
providing a second surface of the substrate 1 opposite to the first surface thereof with a soldering bump 11;
the substrate 1 is cut to form individual package structures.
In summary, the black light absorbing layer is disposed on the inner wall of the supporting dam for supporting the transparent cover plate in the image sensor chip, so that light incident on the inner wall of the supporting dam can be absorbed, and further reflected to the photosensitive area to interfere with the photosensitive area is avoided, thereby reducing the influence of stray light on direct image light and improving the imaging effect.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention and is not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention are included in the scope of the present invention.
Claims (12)
1. An image sensing chip package structure, comprising:
the image sensing chip is provided with a first surface and a second surface which are opposite, and a photosensitive area is arranged on the first surface of the image sensing chip;
the supporting dam is arranged on the first surface of the image sensing chip, surrounds the periphery of the photosensitive area, and is provided with an inner wall surface facing the photosensitive area and an outer wall surface opposite to the inner wall surface;
the transparent cover plate is covered on the supporting dam and forms a closed cavity for accommodating the light sensing area together with the supporting dam;
it is characterized in that the preparation method is characterized in that,
and a light absorption layer is arranged on at least the inner wall surface of the supporting dam.
2. The image sensor chip package structure of claim 1, wherein the light absorbing layer is disposed at a junction of the transparent cover plate and the inner wall of the supporting dam and extends inward along the transparent cover plate, and the light absorbing layer at least exposes the photosensitive region.
3. The image sensor chip package structure of claim 1, wherein the light absorbing layer is disposed at a junction of the supporting dam and the image sensor chip.
4. The image sensor chip package structure of any one of claims 1 to 3, wherein the light absorbing layer is a black ink coating.
5. The image sensor chip package structure of claim 1, wherein the image sensor chip comprises a first bonding pad located outside the photosensitive region, and the supporting dam is disposed in a region between the first bonding pad and the photosensitive region.
6. The image sensor chip package structure of claim 5, further comprising a substrate and a molding layer, wherein the substrate comprises a first surface and a second surface opposite to each other, the image sensor chip is disposed on the first surface of the substrate, the first pad is electrically connected to the second pad disposed on the first surface of the substrate, and the molding layer covers the substrate, the image sensor chip, the supporting dam and the transparent cover plate and at least exposes a region of the transparent cover plate above the photosensitive area.
7. A packaging method of an image sensing chip is characterized by comprising the following steps:
providing an image sensing chip and a transparent cover plate;
manufacturing a supporting dam in a frame structure on one surface of the transparent cover plate, and forming a light absorption layer on at least the inner wall surface of the supporting dam;
and pressing one surface of the transparent cover plate, on which the supporting dam is formed, with the image sensing chip to enable the supporting dam to surround the photosensitive area of the image sensing chip.
8. The method of claim 7, wherein providing the image sensor chip and the transparent cover specifically comprises:
providing a wafer, and forming a plurality of regularly arranged image sensing chips on the wafer;
and providing a wafer-level transparent substrate, wherein the transparent substrate is used for cutting to form a single transparent cover plate.
9. The method of claim 8, wherein the step of forming a dam on one side of the transparent cover to form a frame structure comprises:
and manufacturing a supporting dam on the transparent substrate corresponding to the region between the photosensitive regions of the adjacent image sensing chips on the wafer.
10. The method of claim 8, wherein forming a light absorbing layer on at least the inner wall of the dam comprises:
spraying a layer of black paint on the surface of the supporting dam;
and exposing and developing to expose the black coating at least in the area corresponding to the photosensitive area of the image sensing chip.
11. The method of claim 9, wherein the step of pressing the surface of the transparent cover plate on which the supporting dam is formed with the image sensor chip comprises:
pressing one surface of the transparent substrate on which the supporting dam is formed with the wafer;
removing part of the supporting dam covering the wafer cutting channel, exposing out a first welding pad of the image sensing chip positioned at the outer side of the photosensitive area, dividing the wafer-level transparent substrate into a plurality of transparent cover plates, covering the transparent cover plates above the photosensitive area, and dividing the supporting dam into a single frame structure surrounding the periphery of the photosensitive area;
and cutting the wafer along the cutting path to form a single image sensing chip.
12. The method of claim 11, wherein after the wafer is diced to form individual image sensor chips, the method further comprises:
providing a substrate, arranging the image sensing chip on a first surface of the substrate, and electrically connecting the first welding pad with a second welding pad arranged on the first surface of the substrate;
filling plastic packaging materials to carry out plastic packaging on the substrate, the image sensing chip, the supporting dam and the transparent cover plate, and at least exposing the area of the transparent cover plate above the photosensitive area;
arranging a welding bulge on a second surface of the substrate opposite to the first surface of the substrate;
and cutting the substrate to form a single packaging structure.
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| WO2024051423A1 (en) * | 2022-09-05 | 2024-03-14 | 广东越海集成技术有限公司 | Chip and packaging method for die |
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| WO2024051423A1 (en) * | 2022-09-05 | 2024-03-14 | 广东越海集成技术有限公司 | Chip and packaging method for die |
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