CN215220727U - Image sensing chip packaging structure - Google Patents
Image sensing chip packaging structure Download PDFInfo
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- CN215220727U CN215220727U CN202120975968.1U CN202120975968U CN215220727U CN 215220727 U CN215220727 U CN 215220727U CN 202120975968 U CN202120975968 U CN 202120975968U CN 215220727 U CN215220727 U CN 215220727U
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- dam
- image sensing
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- supporting
- sensing chip
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Abstract
The utility model provides an image sensing chip packaging structure, packaging structure includes: the image sensing chip is provided with a first surface and a second surface which are opposite, and a photosensitive area is arranged on the first surface of the image sensing chip; the supporting dam is arranged on the first surface of the image sensing chip, surrounds the periphery of the photosensitive area, and is provided with an inner wall surface facing the photosensitive area and an outer wall surface opposite to the inner wall surface; the transparent cover plate is covered on the supporting dam and forms a closed cavity for accommodating the light sensing area together with the supporting dam; at least, be provided with the light-absorbing layer on supporting the dam inner wall, the light-absorbing layer can be with incidenting the light absorption on supporting the dam inner wall to avoid it to further reflect to the sensitization district and cause the interference to the sensitization district, reduced the influence of stray light to image direct light, improved the formation of image effect.
Description
Technical Field
The utility model relates to the field of semiconductor technology, specifically relate to an image sensing chip packaging structure.
Background
With the development of light and shadow technologies such as photographing and shooting, the image sensing chip can be used in a camera of an electronic product as a functional image sensing chip capable of converting a received optical signal into an electrical signal, and has huge market demands. The prior image sensing chip packaging structure generally comprises a chip and a transparent glass cover plate for protecting a chip photosensitive area, wherein the transparent glass cover plate is suspended on the chip photosensitive area through a supporting structural member, the transparent glass cover plate and the supporting structural member jointly form a closed cavity for accommodating the chip photosensitive area, however, when part of stray light sources are obliquely incident into the inner wall surface of the supporting structural member, the stray light sources can be further reflected to the chip photosensitive area, the interference to the photosensitive area is caused, and the imaging effect is influenced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an image sensing chip packaging structure.
The utility model provides an image sensing chip packaging structure, include:
the image sensing chip is provided with a first surface and a second surface which are opposite, and a photosensitive area is arranged on the first surface of the image sensing chip;
the supporting dam is arranged on the first surface of the image sensing chip, surrounds the periphery of the photosensitive area, and is provided with an inner wall surface facing the photosensitive area and an outer wall surface opposite to the inner wall surface;
the transparent cover plate is covered on the supporting dam and forms a closed cavity for accommodating the light sensing area together with the supporting dam;
and a light absorption layer is arranged on at least the inner wall surface of the supporting dam.
As a further improvement, in the junction of the inner wall of the transparent cover plate and the supporting dam is provided with an edge the transparent cover plate extends inwards the light absorption layer, just the light absorption layer is exposed at least in the photosensitive area.
As a further improvement, the supporting dam is provided with the light absorption layer on the image sensing chip.
As a further improvement of the utility model, the light absorption layer is a black ink coating.
As a further improvement of the present invention, the image sensor chip includes a first pad located outside the photosensitive region, the support dam is located the first pad with region between the photosensitive region.
As a further improvement of the utility model, packaging structure still includes base plate and plastic envelope layer, the base plate includes relative first face and second face, image sensing chip set up in on the first face of base plate, first weld pad with set up in second weld pad electric connection in the first face of base plate, the cladding of plastic envelope layer the base plate image sensing chip the support dam with the clear cover, and expose at least the clear cover is located the region of sensitization district top.
The utility model has the advantages that: the utility model discloses a to set up one deck black light-absorbing layer on the internal face of the support dam that will be used for supporting transparent cover plate in image sensing chip packaging structure, can support the light absorption on the wall in the dam with inciding to avoid it further to reflect the sensitization district and cause the interference to the sensitization district, reduced stray light to the influence of image direct light, improved the formation of image effect.
Drawings
Fig. 1 is a schematic view of an image sensor chip package structure according to an embodiment of the present invention.
Fig. 2 is a schematic flow chart illustrating a method for packaging an image sensor chip according to an embodiment of the present invention.
Fig. 3 to 9 are schematic diagrams illustrating steps of a method for packaging an image sensor chip according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the technical solutions of the present application will be clearly and completely described below with reference to the detailed description of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
For convenience in explanation, the description herein uses terms indicating relative spatial positions, such as "upper," "lower," "rear," "front," and the like, to describe one element or feature's relationship to another element or feature as illustrated in the figures. The term spatially relative position may encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
As shown in fig. 1, the utility model provides an image sensing chip packaging structure, include: the image sensor comprises a substrate 1, an image sensing chip 2, a supporting dam 3, a transparent cover plate 4 and a plastic package layer 5.
The image sensing chip 2 has a first surface and a second surface opposite to each other, a light sensing area 21 and a first bonding pad 22 located outside the light sensing area 21 and spaced from the light sensing area by a distance are arranged on the first surface of the image sensing chip, and the first bonding pad 22 is electrically coupled with the light sensing area 21.
The light sensing region 21 may include a plurality of photodiode array arrangements for converting optical signals irradiated to the light sensing region 21 into electrical signals. The first pads 22 serve as input and output terminals for devices within the photosensitive region 21 to connect to external circuitry. In other embodiments of the present invention, the image sensor chip 2 may further include other electronic components, which is not limited by the present invention.
The supporting dam 3 is disposed on the first surface of the image sensor chip 2, surrounds the periphery of the photosensitive region 21, and is located in a region between the first bonding pad 22 and the photosensitive region 21. The supporting dam 3 is made of an insulating dielectric material such as photoresist, silicon oxide, silicon nitride, silicon oxynitride, etc. and is used for supporting the transparent cover plate 4.
An adhesive layer is arranged between the supporting dam 3 and the image sensing chip 2 for fixing the two and sealing the two, and the adhesive layer can be a high-molecular adhesive material, such as a polymer material like silica gel, epoxy resin, benzocyclobutene, etc.
Further, a light absorbing layer 31 is provided at least on the inner wall surface of the support dam 3.
Specifically, in the present embodiment, the light absorbing layer 31 is a black ink coating, and the light absorbing layer 31 formed on the inner wall surface of the supporting dam 3 can absorb light incident on the inner wall surface of the supporting dam 3, so as to prevent the light from further incident on the photosensitive area 21 to interfere with the photosensitive area 21, thereby affecting the imaging effect. In other embodiments of the present invention, other light absorbing materials may be used as the light absorbing layer 31 as long as the light absorbing effect can be achieved.
Further, in the junction of the inner wall of the transparent cover plate 4 and the supporting dam 3, a light absorption layer 31 extending inwards along the transparent cover plate 4 is arranged, the light absorption layer 31 at least exposes the photosensitive area 21, the light absorption layer 31 is arranged in the edge area of the transparent cover plate 4, and the light absorption layer 31 is arranged in the partial area of the transparent cover plate 4 not directly covering the photosensitive area 21, so that the light absorption layer 31 can further enhance the absorption effect on the stray light on the premise of not influencing the effective direct light, and the interference problem of the stray light is reduced.
Further, the light absorbing layer 31 is disposed at the interface between the supporting dam 3 and the image sensing chip 2, and since the supporting dam 3 for chip packaging size level exhibits a certain transparency, the light absorbing layer 31 disposed therein can absorb the light incident on the bottom surface of the supporting dam 3, thereby preventing the light from being further reflected into the sealed cavity to affect the direct light.
The substrate 1 comprises a first surface and a second surface which are opposite to each other, the image sensing chip 2 is arranged on the first surface of the substrate 1, the first welding pad 22 is electrically connected with the second welding pad 12 arranged on the first surface of the substrate 1, and the image sensing chip 2 is electrically conducted with the substrate 1 through a metal welding wire.
The second surface of the substrate 1 is provided with a solder bump 11 such as a solder ball for electrical connection with the outside.
In other embodiments of the present invention, an electrical connection member such as a solder ball may be disposed on the back surface of the image sensor chip 2, a conduction structure such as a through silicon via is formed inside the electrical connection member, which conducts the photosensitive area 21 and the electrical connection member, and the image sensor chip 2 and the substrate 1 are electrically connected by a flip-chip method.
The plastic package layer 5 covers the substrate 1, the image sensing chip 2, the supporting dam 3 and the transparent cover plate 4, and at least exposes the region of the transparent cover plate 4 above the photosensitive region 21. The molding compound can be polymer composite materials such as epoxy resin, polyimide, dry film and the like, and the molding layer 5 provides physical support for the packaging structure and plays a role in sealing and protecting the image sensing chip 2, the substrate 1 and the bonding wires.
As shown in fig. 2, the present invention further provides a method for packaging an image sensor chip 2, which includes the steps of:
s1: an image sensing chip 2 and a transparent cover plate 4 are provided.
S2: a supporting dam 3 having a frame structure is formed on one surface of a transparent cover plate 4, and a light absorbing layer 31 is formed at least on the inner wall surface of the supporting dam 3.
S3: the surface of the transparent cover plate 4 on which the supporting dam 3 is formed is pressed with the image sensing chip 2, so that the supporting dam 3 surrounds the photosensitive area 21 of the image sensing chip 2.
Further, the utility model discloses a for 2 wafer level packaging methods of image sensing chip.
As shown in fig. 3, in step S1, it specifically includes:
providing a wafer a, forming a plurality of regularly arranged image sensing chips 2 on the wafer a, and forming cutting channels between adjacent image sensing chips 2. After the wafer is packaged, the wafer is cut along the cutting channels, so that a plurality of image sensing chip packaging structures can be formed.
It should be noted that the dicing channel is only a margin area reserved between the two image sensor chips 2 for dicing, and there is no actual boundary line between the dicing channel and the image sensor chips 2 on both sides.
As shown in fig. 4, a transparent substrate b at wafer level is provided, which is cut to form a single transparent cover plate 4.
In step S2, the step of forming the supporting dam 3 having a frame structure on one surface of the transparent cover plate 4 specifically includes:
The utility model discloses an among some embodiments, the material of supporting dam 3 is the photosensitive emulsion, forms the photosensitive emulsion coating on transparent substrate through technologies such as spraying or spin coating, then carries out graphical processing to the photosensitive emulsion coating through exposure development, forms the supporting dam 3 that the array was arranged in the regulation district. In other embodiments of the present invention, the material of the supporting dam 3 may be insulating material such as silicon oxide, silicon nitride, silicon oxynitride, etc., and is formed by deposition process, and the supporting dam 3 arranged in the specified area is formed by patterning by photolithography and etching process.
As shown in fig. 5, "forming the light absorbing layer 31 at least on the inner wall surface of the support dam 3" specifically includes:
and spraying a layer of black paint on the surface of the supporting dam 3.
And exposing and developing, namely performing graphical treatment on the black coating completely coated on the surface of the supporting dam 3, so that the black coating at least exposes the area corresponding to the photosensitive area 21 of the image sensing chip 2.
Specifically, in the present embodiment, the black paint is a black ink.
As shown in fig. 6 and 7, in step S3, it specifically includes:
s31: the surface of the transparent substrate on which the supporting dam 3 is formed is pressed against the wafer a.
In some embodiments of the present invention, the supporting dam 3 and the wafer a may be aligned and pressed together by the adhesive layer. An adhesive layer is formed on the upper surface of the support dam 3 or a limited area on the wafer by a screen printing or spin coating process, and then the support dam 3 and the wafer a are aligned and pressed and bonded by the adhesive layer.
S32: removing part of the supporting dam 3 covering the wafer dicing channel, exposing the first welding pad 22 of the image sensing chip 2 positioned at the outer side of the light sensing area 21, dividing the wafer-level transparent substrate b into a plurality of transparent cover plates 4, covering the transparent cover plates 4 above the light sensing area 21, and dividing the supporting dam 3 into a single frame structure surrounding the periphery of the light sensing area 21.
In different embodiments, there are various structures for implementing the supporting dam 3 on the transparent substrate, and a portion of the supporting dam 3 covering the scribe line is removed by cutting or by a process of cutting before etching according to different structures of the supporting dam 3.
As shown in fig. 8, S34: and cutting the wafer along the cutting lines to form single image sensing chips 2.
As shown in fig. 9, after step S3, the method further includes the steps of:
providing a substrate 1, disposing the image sensing chip 2 on a first surface of the substrate 1, and electrically connecting the first bonding pad 22 with the second bonding pad 12 disposed on the first surface of the substrate 1;
filling plastic packaging materials to carry out plastic packaging on the substrate 1, the image sensing chip 2, the supporting dam 3 and the transparent cover plate 4, and exposing at least the area of the transparent cover plate 4 above the photosensitive area 21;
providing a second surface of the substrate 1 opposite to the first surface thereof with a soldering bump 11;
the substrate 1 is cut to form individual package structures.
To sum up, the utility model discloses a to be used for supporting the one deck black light-absorption layer on the internal face of support dam of transparent apron in image sensing chip, can be with inciding the light absorption on supporting the dam internal wall to avoid it further to reflect the sensitization district and cause the interference to the sensitization district, reduced stray light to the influence of image direct light, improved the formation of image effect.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the feasible embodiments of the present invention, and is not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. An image sensing chip package structure, comprising:
the image sensing chip is provided with a first surface and a second surface which are opposite, and a photosensitive area is arranged on the first surface of the image sensing chip;
the supporting dam is arranged on the first surface of the image sensing chip, surrounds the periphery of the photosensitive area, and is provided with an inner wall surface facing the photosensitive area and an outer wall surface opposite to the inner wall surface;
the transparent cover plate is covered on the supporting dam and forms a closed cavity for accommodating the light sensing area together with the supporting dam;
it is characterized in that the preparation method is characterized in that,
and a light absorption layer is arranged on at least the inner wall surface of the supporting dam.
2. The image sensor chip package of claim 1, wherein the light absorbing layer is disposed at a junction of the transparent cover and the inner wall of the supporting dam and extends inward along the transparent cover, and the light absorbing layer at least exposes the photosensitive region.
3. The image sensor chip package structure of claim 1, wherein the light absorbing layer is disposed at a junction of the supporting dam and the image sensor chip.
4. The image sensor chip package structure of any one of claims 1 to 3, wherein the light absorbing layer is a black ink coating.
5. The image sensor chip package structure of claim 1, wherein the image sensor chip comprises a first bonding pad located outside the photosensitive region, and the supporting dam is disposed in a region between the first bonding pad and the photosensitive region.
6. The image sensor chip package structure of claim 5, further comprising a substrate and a molding layer, wherein the substrate comprises a first surface and a second surface opposite to each other, the image sensor chip is disposed on the first surface of the substrate, the first pad is electrically connected to the second pad disposed on the first surface of the substrate, and the molding layer covers the substrate, the image sensor chip, the supporting dam and the transparent cover plate and at least exposes a region of the transparent cover plate above the photosensitive area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120975968.1U CN215220727U (en) | 2021-05-08 | 2021-05-08 | Image sensing chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120975968.1U CN215220727U (en) | 2021-05-08 | 2021-05-08 | Image sensing chip packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215220727U true CN215220727U (en) | 2021-12-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120975968.1U Active CN215220727U (en) | 2021-05-08 | 2021-05-08 | Image sensing chip packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215220727U (en) |
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2021
- 2021-05-08 CN CN202120975968.1U patent/CN215220727U/en active Active
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