CN113140528A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN113140528A
CN113140528A CN202110031017.3A CN202110031017A CN113140528A CN 113140528 A CN113140528 A CN 113140528A CN 202110031017 A CN202110031017 A CN 202110031017A CN 113140528 A CN113140528 A CN 113140528A
Authority
CN
China
Prior art keywords
lead frame
surface portion
power module
semiconductor element
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110031017.3A
Other languages
English (en)
Chinese (zh)
Inventor
多田和弘
石井隆一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN113140528A publication Critical patent/CN113140528A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN202110031017.3A 2020-01-16 2021-01-11 半导体装置 Pending CN113140528A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020004811A JP6877600B1 (ja) 2020-01-16 2020-01-16 半導体装置
JP2020-004811 2020-01-16

Publications (1)

Publication Number Publication Date
CN113140528A true CN113140528A (zh) 2021-07-20

Family

ID=75961568

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110031017.3A Pending CN113140528A (zh) 2020-01-16 2021-01-11 半导体装置

Country Status (2)

Country Link
JP (1) JP6877600B1 (ja)
CN (1) CN113140528A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113675158B (zh) * 2021-07-06 2024-01-05 珠海越亚半导体股份有限公司 循环冷却嵌埋封装基板及其制作方法
JP2023054418A (ja) * 2021-10-04 2023-04-14 三菱電機株式会社 電力用半導体装置及びその製造方法
US20230223317A1 (en) * 2022-01-13 2023-07-13 Mitsubishi Electric Corporation Resin-sealed semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133664A (ja) * 1998-10-22 2000-05-12 Sony Corp 半導体装置
JP3898156B2 (ja) * 2003-06-02 2007-03-28 三菱電機株式会社 半導体パワーモジュール
JP4770533B2 (ja) * 2005-05-16 2011-09-14 富士電機株式会社 半導体装置の製造方法および半導体装置
JP4492448B2 (ja) * 2005-06-15 2010-06-30 株式会社日立製作所 半導体パワーモジュール
JP2011216619A (ja) * 2010-03-31 2011-10-27 Nippon Steel Chem Co Ltd 積層構造体及びその製造方法
JP5391162B2 (ja) * 2010-08-17 2014-01-15 三菱電機株式会社 電力用半導体装置
JP2013135161A (ja) * 2011-12-27 2013-07-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN105190874B (zh) * 2013-05-09 2018-05-18 三菱电机株式会社 半导体模块及半导体装置

Also Published As

Publication number Publication date
JP2021111765A (ja) 2021-08-02
JP6877600B1 (ja) 2021-05-26

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