CN113113845A - Laser module based on photonic crystal structure chip - Google Patents
Laser module based on photonic crystal structure chip Download PDFInfo
- Publication number
- CN113113845A CN113113845A CN202110419898.6A CN202110419898A CN113113845A CN 113113845 A CN113113845 A CN 113113845A CN 202110419898 A CN202110419898 A CN 202110419898A CN 113113845 A CN113113845 A CN 113113845A
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- laser
- photonic crystal
- laser array
- array
- chip
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 70
- 239000000919 ceramic Substances 0.000 claims abstract description 38
- 230000017525 heat dissipation Effects 0.000 claims abstract description 19
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 238000003491 array Methods 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 230000035617 depilation Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 230000003796 beauty Effects 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 210000003780 hair follicle Anatomy 0.000 description 2
- 210000003491 skin Anatomy 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a laser module based on a photonic crystal structure chip, which comprises: the heat dissipation base, the first laser array, the second laser array and at least two groups of positive and negative electrodes are led out of the ceramic; the heat dissipation base is used for dissipating heat of the first laser array and the second laser array; the first laser array and the second laser array respectively comprise a plurality of photonic crystal laser units; each photonic crystal laser unit comprises two tungsten-copper electrodes, aluminum nitride ceramic and a photonic crystal laser chip, and the photonic crystal laser chip is used for emitting laser; and the anode and cathode lead-out ceramics in each group are used for respectively leading out the anode and cathode of the first laser array and the anode and cathode of the second laser array.
Description
Technical Field
The invention relates to the field of laser medical beauty treatment instruments, in particular to a laser module based on a photonic crystal structure chip.
Background
The laser depilation principle is that according to the selective photothermal dynamics principle, laser can penetrate through the surface layer of skin to reach the root hair follicle of hair by reasonably adjusting laser wavelength, energy and pulse width. The light energy is absorbed and converted to heat energy that destroys the hair follicle tissue, thereby rendering the hair non-regenerative without damaging surrounding tissue. Compared with the traditional laser, the semiconductor laser has the advantages of small volume, light weight, high reliability, long service life, low power consumption and the like, and in addition, the semiconductor laser adopts a low-voltage constant-current power supply mode, so that the power failure rate is low, the use is safe, the maintenance cost is low and the like, and the semiconductor laser is widely applied to the medical beauty industry in recent years, particularly the laser depilation aspect. However, the existing semiconductor laser depilation module has a fixed depilation area, different handpieces or devices need to be replaced aiming at depilation of skins at different positions, and the operation is troublesome, more importantly, the semiconductor laser module in the current market has a large divergence angle, small power density and poor spot uniformity.
Disclosure of Invention
In view of this, the present invention provides a laser module based on a photonic crystal structure chip, in order to increase the power density of the laser module and reduce the use condition of the power module.
The invention provides a laser module based on a photonic crystal structure chip, which comprises: the heat dissipation base, the first laser array, the second laser array and at least two groups of positive and negative electrodes are led out of the ceramic; the heat dissipation base is used for dissipating heat of the first laser array and the second laser array; the first laser array and the second laser array respectively comprise a plurality of photonic crystal laser units; each photonic crystal laser unit comprises two tungsten-copper electrodes, aluminum nitride ceramic and a photonic crystal laser chip, and the photonic crystal laser chip is used for emitting laser; and the anode and cathode lead-out ceramics in each group are used for respectively leading out the anode and cathode of the first laser array and the anode and cathode of the second laser array.
In some embodiments, the photonic crystal laser chip increases the longitudinal waveguide size to 5um by the longitudinal mode expansion theory, the fast axis divergence angle of the photonic crystal laser chip is a full width half maximum divergence angle (FWHM), the fast axis divergence angle is reduced to about 13-15 ° (FWHM), and is smaller than half of a 36 ° (FWHM) of a common laser chip, so that the power density in a unit area is greatly improved.
In some embodiments, the photonic crystal laser unit is formed by welding two tungsten copper electrodes, aluminum nitride ceramic and a photonic crystal laser chip by hard solder.
In some embodiments, two tungsten copper electrodes are respectively welded on the P, N two sides of the photonic crystal laser chip to form the positive and negative electrodes of the photonic crystal laser unit.
In some embodiments, the back cavity of the photonic crystal laser chip is close to the aluminum nitride ceramic, and the front cavity is flush with the two tungsten-copper electrodes on two sides.
In some embodiments, the first laser array and the second laser array are respectively formed by welding a plurality of photonic crystal laser units in a positive-negative electrode series laminated mode.
In some embodiments, the heat sink base is used to encapsulate the first laser array, the second laser array, and the anode and cathode lead-out ceramic.
In some embodiments, the upper and lower surfaces of the two sides of the heat dissipation base are provided with grooves, and the end surfaces of the grooves are welded with the anode and cathode lead-out ceramics.
In some embodiments, at least one of the first laser array and the second laser array is in operation.
In some embodiments, the first laser array has a wavelength λ 1, and the second laser array has a wavelength λ 1 or λ 2; wherein, the lambda 1 is 780 +/-10 nm, and the lambda 2 is 808 +/-10 nm.
According to the invention, the photonic crystal structure chip is adopted to form the first laser array and the second laser array, and the first laser array and the second laser array are constructed to form the laser module, so that the power density of the laser module is increased, the use condition of the laser module is reduced, and the service life of the laser module can be prolonged.
In addition, the first laser array and the second laser array adopt different wavelengths, and different requirements of users can be met. The first laser array and the second laser array adopt the same wavelength and work simultaneously, and large-area light emission can be realized; the first laser array and the second laser array adopt the same wavelength, only one laser array is in a working state, the other laser array can be used as a standby component, and when one laser array is abnormal or damaged, the other laser array can be switched to the other laser array, so that the use of the laser module is not interrupted.
Drawings
Fig. 1 is a schematic overall structure diagram of a laser module according to an embodiment of the present invention;
FIG. 2 is a top view of the overall structure of a laser module provided by an embodiment of the invention;
FIG. 3 is a rear view of the overall structure of a laser module provided by an embodiment of the present invention;
FIG. 4 is an enlarged view of a portion of a laser array provided in accordance with an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a photonic crystal laser unit according to an embodiment of the present invention;
FIG. 6 is a diagram of the spot energy distribution of a conventional laser array;
fig. 7 is a distribution diagram of spot energy of a laser array formed by a photonic crystal laser chip according to an embodiment of the present invention.
[ legends of drawings ]
1-a heat dissipation base; 2-a first laser array; 3-a second laser array; 4-leading out the ceramic from the positive electrode and the negative electrode; 5-a photonic crystal laser unit; 6-tungsten copper electrode; 7-aluminum nitride ceramic; 8-photonic crystal laser chip
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Fig. 1 is a schematic view of an overall structure of a laser module according to an embodiment of the present invention. Fig. 2 is a top view of the overall structure of a laser module according to an embodiment of the present invention. Fig. 3 is a rear view of the overall structure of a laser module provided by an embodiment of the present invention.
Referring to fig. 1, 2 and 3, the present invention provides a laser module based on a photonic crystal structure chip, the laser module including: the heat dissipation device comprises a heat dissipation base 1, a first laser array 2, a second laser array 3, and at least two groups of anode and cathode lead-out ceramics 4; the heat dissipation base 1 is used for dissipating heat of the first laser array 2 and the second laser array 3; the first laser array 2 and the second laser array 3 respectively comprise a plurality of photonic crystal laser units 5; each photonic crystal laser unit 5 comprises two tungsten copper electrodes 6, aluminum nitride ceramics 7 and a photonic crystal laser chip 8, and the photonic crystal laser chip 8 is used for emitting laser; and each group of anode and cathode lead-out ceramics 4 is used for leading out the anode and cathode of the first laser array 2 and the anode and cathode of the second laser array 3 respectively.
According to the invention, the photonic crystal structure chip is adopted to form the first laser array and the second laser array, and the first laser array and the second laser array are constructed to form the laser module, so that the power density of the laser module is increased, the use condition of the laser module is reduced, and the service life of the laser module can be prolonged.
According to an embodiment of the present invention, the fast axis divergence angle of the photonic crystal laser chip 8 may be 13 ° -15 ° (FWHM), for example, may be optionally 13 °, 14 °, 15 ° (FWHM).
According to the embodiment of the invention, the fast axis divergence angle of the photonic crystal laser chip 8 can be 15 ° (FWHM), which is smaller than half of the fast axis divergence angle (about 36 °, FWHM) of a common laser, and the power density per unit area is improved.
According to an embodiment of the present invention, the heat dissipation base 1 is used to dissipate heat of the first laser array 2 and the second laser array 3.
According to the embodiment of the invention, the heat dissipation base 1 is internally provided with a water channel, and heat is taken away through water circulation in the water channel.
According to the embodiment of the invention, the heat dissipation base 1 is used for packaging the first laser array 2, the second laser array 3 and the anode and cathode extraction ceramic 4.
According to the embodiment of the invention, grooves are formed in the upper surface and the lower surface of the two sides of the heat dissipation base 1, and the end faces of the grooves are welded with the anode and cathode lead-out ceramics 4.
According to the embodiment of the invention, the interior and the surface of the heat dissipation base 1 are metallized, wherein the outermost layer is gold, which can play a role in resisting oxidation and well welding with the first laser array 2 and the second laser array 3.
Fig. 4 is a partially enlarged view of a laser array according to an embodiment of the present invention. As shown in fig. 1 and 4, the first laser array 2 and the second laser array 3 each include a plurality of photonic crystal laser units 5.
According to the embodiment of the invention, the first laser array 2 and the second laser array 3 are respectively formed by welding a plurality of photonic crystal laser units 5 in a positive-negative electrode series laminated manner.
According to the embodiment of the invention, the first laser array 2 and the second laser array 3 can be respectively formed by welding the anode and the cathode of 10 photonic crystal laser units 5 in series in a laminated manner.
According to the embodiment of the invention, the first laser array 2 and the second laser array 3 can be respectively formed by welding the positive electrode and the negative electrode of 16 photonic crystal laser units 5 in series, and laminating.
According to the embodiment of the invention, the first and last photonic crystal laser units 5 of each laser array are respectively connected with the respective cathode lead-out ceramic 4 and anode lead-out ceramic 4 to form an independent and complete light emitting array.
Fig. 5 is a schematic structural diagram of a photonic crystal laser unit according to an embodiment of the present invention. As shown in fig. 5, each photonic crystal laser unit 5 includes two pieces of tungsten copper electrodes 6, aluminum nitride ceramics 7, and a photonic crystal laser chip 8.
According to the embodiment of the invention, the photonic crystal laser unit 5 is formed by welding two tungsten copper electrodes 6, aluminum nitride ceramic 7 and a photonic crystal laser chip 8 by hard solder.
According to the embodiment of the invention, two tungsten copper electrodes 6 are respectively welded on the P, N two sides of the photonic crystal laser chip 8 to form the positive and negative electrodes of the photonic crystal laser unit 5.
According to the embodiment of the invention, the back cavity of the photonic crystal laser chip 8 is close to the aluminum nitride ceramic 7, and the front cavity is flush with the two tungsten copper electrodes 6 on two sides.
According to the embodiment of the invention, the number of the photonic laser chips 8 in the first laser array 2 and the second laser array 3 can be adjusted according to the actual design, and the power of the photonic laser chips 8 can also be adjusted according to the actual design.
According to the embodiment of the invention, the heat generated by the photonic crystal laser chip 8 is conducted downwards to the high-thermal-conductivity aluminum nitride ceramic 7 covered with a thick metal layer at the bottom end of the photonic crystal laser unit 5, one side of the aluminum nitride ceramic 7 with an insulating groove is welded with the tungsten-copper electrode 6 through hard solder, and the other side of the aluminum nitride ceramic 7 is connected with the heat dissipation base 1, so that the heat is taken away through cooling water circulation.
According to the embodiment of the invention, each group of the anode and cathode lead-out ceramics 4 is used for respectively leading out the anode and cathode of the first laser array 2 and the anode and cathode of the second laser array 3.
According to the embodiment of the invention, two surfaces of the anode lead-out ceramic and the cathode lead-out ceramic 4 are covered with thick metal layers, wherein one surface is welded at the grooves at two sides of the heat dissipation base 1, and the other surface is welded at the first photonic crystal laser unit 5 and the last photonic crystal laser unit 5 of the first laser array 2 and the second laser array 3, and is used for connecting the anodes and the cathodes of the first laser unit 2 and the second laser unit 3 on the metal layers of the anode lead-out ceramic and the cathode lead-out ceramic 4 in a rotating.
According to the embodiment of the invention, the first laser array 2 and the second laser array 3 can be electrically connected and externally controlled by welding the wires on the metal layers of the anode and cathode lead-out ceramics 4.
According to an embodiment of the invention, at least one of the first laser array 2 and the second laser array 3 is in operation.
According to an embodiment of the present invention, the first laser array 2 and the second laser array 3 may be operated simultaneously.
According to an embodiment of the invention, only one of the first laser array 2 and the second laser array 3 is in operation.
According to an embodiment of the present invention, the wavelength of the first laser array 2 may be λ 1, and the wavelength of the second laser array 3 may be λ 1 or λ 2; wherein, the lambda 1 is 780 +/-10 nm, and the lambda 2 is 808 +/-10 nm.
According to an embodiment of the present invention, λ 1 may be 780 ± 10nm, for example, 770nm, 775nm, 780nm, 785nm, 790nm may be possible.
According to an embodiment of the present invention, λ 2 may be 808 ± 10nm, for example, 798nm, 803nm, 808nm, 813nm, 818 nm.
According to an embodiment of the present invention, the first laser array 2 and the second laser array 3 may both have a wavelength λ 1. The first laser array 2 and the second laser array 3 are in the same waveband, and the second laser array 3 can be used as a spare part of the first laser array 2. When the first laser array 2 in the working state is abnormal or damaged, the second laser array 3 can be switched to, and the use of the laser module is not interrupted.
According to an embodiment of the present invention, the first laser array 2 and the second laser array 3 may both have a wavelength λ 1. The first laser array 2 and the second laser array 3 are in working states at the same time, and large-area light emission can be achieved.
According to an embodiment of the present invention, the wavelength of the first laser array 2 may be λ 1, and the wavelength of the second laser array 3 may be λ 2. The switching between the first laser array 2 and the second laser array 3 is possible for different requirements of the user.
Fig. 6(a) is a diagram showing the spot energy distribution of a common laser array at a 1.5mm distance reception. Fig. 7(a) is a distribution diagram of spot energy at a 1.5mm distance reception of a laser array formed by a photonic crystal laser chip provided by the embodiment of the invention. As shown in fig. 6(a) and 7(a), the energy density of the laser array formed by the photonic crystal laser chip 8 is higher than that of the ordinary laser array at the 1.5mm distance reception.
Fig. 6(b) is a diagram showing the spot energy distribution of a common laser array at a 2.5mm distance reception. Fig. 7(b) is a distribution diagram of spot energy at a 2.5mm distance reception of a laser array formed by the photonic crystal laser chip provided by the embodiment of the invention. As shown in fig. 6(b) and 7(b), at the 2.5mm distance reception, the energy density of the laser array formed by the photonic crystal laser chip 8 is higher than that of the ordinary laser array. Therefore, the energy density of the laser array formed by the photonic crystal laser chip 8 is higher than that of the ordinary laser array at the same operating current. In other words, to achieve the same laser energy, the operating current of the first laser array 2 and the second laser array 3 is lower than that of the ordinary laser, which reduces the operating condition of the semiconductor laser module, and is equivalent to prolonging the service life of the laser module.
According to the embodiment of the invention, the first laser array and the second laser array are formed by adopting the photonic crystal structure chip, and the first laser array and the second laser array are constructed to form the laser module, so that the power density of the laser module is increased, the use condition of the laser module is reduced, and the service life of the laser module can be prolonged.
In addition, the first laser array and the second laser array in the embodiment of the invention adopt different wavelengths, so that different requirements of users can be met. The first laser array and the second laser array adopt the same wavelength and work simultaneously, and large-area light emission can be realized; the first laser array and the second laser array adopt the same wavelength, only one laser array is in a working state, the other laser array can be used as a standby component, and when one laser array is abnormal or damaged, the other laser array can be switched to the other laser array, so that the use of the laser module is not interrupted.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A laser module based on a photonic crystal structure chip, comprising:
the heat dissipation base, the first laser array, the second laser array and at least two groups of positive and negative electrodes are led out of the ceramic;
the heat dissipation base is used for dissipating heat of the first laser array and the second laser array;
the first laser array and the second laser array respectively comprise a plurality of photonic crystal laser units;
each photonic crystal laser unit comprises two tungsten-copper electrodes, aluminum nitride ceramic and a photonic crystal laser chip, and the photonic crystal laser chip is used for emitting laser;
and each group of the anode and cathode lead-out ceramics is used for leading out the anode and cathode of the first laser array and the anode and cathode of the second laser array respectively.
2. The laser module of claim 1, wherein the photonic crystal laser chip has a fast axis divergence angle of 13 ° to 15 °.
3. The laser module of claim 1, wherein the photonic crystal laser unit is formed by welding the two tungsten-copper electrodes, the aluminum nitride ceramic and the photonic crystal laser chip by hard solder.
4. The laser module of claim 3, wherein the two tungsten-copper electrodes are respectively welded on the P, N two sides of the photonic crystal laser chip to form the positive and negative electrodes of the photonic crystal laser unit.
5. The laser module of claim 4, wherein the photonic crystal laser chip back cavity is close to the aluminum nitride ceramic, and the front cavity is flush with the two tungsten-copper electrodes on two sides.
6. The laser module of claim 1, wherein the first laser array and the second laser array are respectively formed by welding positive and negative electrode series lamination of the plurality of photonic crystal laser units.
7. The laser module of claim 1, wherein the heat sink base is configured to encapsulate the first laser array, the second laser array, and the positive and negative lead-out ceramic.
8. The laser module of claim 1, wherein grooves are formed in the upper and lower surfaces of the two sides of the heat dissipation base, and the end faces of the grooves are welded to the positive and negative electrode lead-out ceramics.
9. A laser module as claimed in claim 1, wherein at least one of the first and second laser arrays is in operation.
10. A laser module as claimed in claim 1, wherein the first laser array has a wavelength λ 1 and the second laser array has a wavelength λ 1 or λ 2; wherein, the lambda 1 is 780 +/-10 nm, and the lambda 2 is 808 +/-10 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110419898.6A CN113113845A (en) | 2021-04-19 | 2021-04-19 | Laser module based on photonic crystal structure chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110419898.6A CN113113845A (en) | 2021-04-19 | 2021-04-19 | Laser module based on photonic crystal structure chip |
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| CN113113845A true CN113113845A (en) | 2021-07-13 |
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| CN202110419898.6A Pending CN113113845A (en) | 2021-04-19 | 2021-04-19 | Laser module based on photonic crystal structure chip |
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| US20080080579A1 (en) * | 2006-07-13 | 2008-04-03 | California Institute Of Technology | Electrically pumped low-threshold ultra-small photonic crystal lasers |
| CN102025111A (en) * | 2010-11-19 | 2011-04-20 | 无锡亮源激光技术有限公司 | Small-divergence-angle solid laser pumping module encapsulating structure |
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Inventor after: Liu Jing Inventor after: Zheng Wanhua Inventor after: Zhou Xuyan Inventor after: Qi Aiyi Inventor after: Quhongwei Inventor after: Xing Xiaoxu Inventor before: Zheng Wanhua Inventor before: Liu Jing Inventor before: Zhou Xuyan Inventor before: Qi Aiyi Inventor before: Quhongwei Inventor before: Xing Xiaoxu |
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Application publication date: 20210713 |