CN111082306A - Semiconductor laser array and packaging method thereof - Google Patents

Semiconductor laser array and packaging method thereof Download PDF

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Publication number
CN111082306A
CN111082306A CN201911108876.7A CN201911108876A CN111082306A CN 111082306 A CN111082306 A CN 111082306A CN 201911108876 A CN201911108876 A CN 201911108876A CN 111082306 A CN111082306 A CN 111082306A
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Prior art keywords
heat sink
semiconductor laser
laser
laser array
ceramic
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CN201911108876.7A
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Chinese (zh)
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CN111082306B (en
Inventor
曲轶
任永学
李再金
赵志斌
乔忠良
李林
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Hainan Normal University
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Hainan Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters

Abstract

The invention discloses a semiconductor laser array, which is characterized in that a ceramic carrier is structurally improved, two symmetrical notches are cut at the edge of a ceramic strip, and a discrete arrangement mode is adopted, so that the short circuit of laser chips caused by the metalized connection of the upper surfaces of two adjacent ceramic strips can be avoided, the packaging stress is reduced, and the one-time packaging of hundreds of laser chips can be realized. Meanwhile, the invention also provides a packaging method of the semiconductor laser array, the packaging method has simple and convenient assembly process, the requirement of a sintering process is reduced, and the packaged semiconductor laser array can obtain the optimal heat dissipation effect and the packaging stress is also greatly reduced.

Description

Semiconductor laser array and packaging method thereof
Technical Field
The invention relates to the technical field of photoelectric devices, in particular to a semiconductor laser array and a packaging method thereof.
Background
At present, a semiconductor laser array has the characteristics of small volume, high peak power, high reliability and the like, is widely applied to the fields of civil laser medical treatment, industrial laser processing, laser ranging and the like, and also has important application in the military fields of laser interference, laser suppression, laser target indication, laser weapons and the like. The ceramic chip in the existing semiconductor laser array is of an integral structure, when a laser chip, a heat sink and the ceramic chip are packaged, the ceramic chip has overlarge packaging stress on the laser chip due to the unreasonable arrangement of the ceramic structure, the number of the general laser chips does not exceed 30, the packaging of a plurality of chips cannot be realized, and the use requirement of the existing application field on a high-power-density chip cannot be met.
Therefore, it is an urgent need to solve the problem of the art to provide a method for packaging a semiconductor laser array with a simple packaging method and without limitation on the number of packaged chips.
Disclosure of Invention
In view of the above, the present invention provides a semiconductor laser array and a packaging method thereof, wherein the laser array is structurally improved on a ceramic carrier and adopts a discrete arrangement manner, so as to overcome the problems that the existing semiconductor laser array packaging has large stress and can not realize the packaging requirements of a plurality of chips.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, the present invention provides a semiconductor laser array comprising:
the laser device comprises a plurality of laser chips, wherein positive electrodes of the plurality of laser chips are arranged in the same direction, and the light emitting directions of the laser chips are the same;
the laser chip comprises a plurality of heat sinks, a plurality of laser chips and a plurality of heat sinks are vertically arranged and are sequentially arranged at intervals, and the adjacent laser chips are welded with the heat sinks;
a plurality of discrete ceramic strips are arranged, the plurality of discrete ceramic strips are correspondingly arranged at the bottom of the heat sink, and the top ends of the discrete ceramic strips are welded with the bottom surface of the heat sink;
the electrode connecting pieces are respectively welded at two ends of a welding piece consisting of the laser chip and the heat sink;
and the bottom end of the discrete ceramic strip is welded with the heat sink.
Furthermore, metal layers for welding are coated on the top surface and the bottom surface of the discrete ceramic strip, and the discrete ceramic strip is respectively welded with the heat sink and the heat sink seat through the metal layers.
Furthermore, the cross section of the discrete ceramic strip is of a quasi-rectangular structure, and two ends of the top of the rectangle are respectively sunken in to form notches.
Further, the notch is a right-angle opening or an arc-shaped opening. The edge of the ceramic strip is made into a chamfer structure (namely two symmetrical notches are cut), so that the short circuit of the laser chip caused by the metalized connection of the upper surfaces of two adjacent ceramic strips can be avoided.
Furthermore, the surface of the heat sink is coated with a gold-tin solder layer, and the heat sink is respectively welded with the laser chip, the discrete ceramic strips and the electrode connecting sheet through the gold-tin solder layer.
In another aspect, the present invention further provides a method for packaging a semiconductor laser array, including the following steps:
step 1: coating a layer of gold-tin solder on the surface of the heat sink;
step 2: arranging the heat sinks and the laser chips at intervals in sequence, and pressing the heat sinks and the laser chips tightly through a tool clamp;
and step 3: welding electrode connecting sheets at two ends of the welded parts of the pressed heat sink and the laser chip respectively;
and 4, step 4: preprocessing the vertical ceramic strips before welding;
and 5: and welding the top surface of the discrete ceramic strip with the bottom surface of the heat sink, and welding the bottom surface of the discrete ceramic strip with the top of the heat sink seat.
Further, the step 4 specifically includes:
step 401: cutting two ends of the top of the vertical ceramic strip to form an invaginated notch;
step 402: and coating a metal layer for welding on the top surface and the bottom surface of the discrete ceramic strip.
According to the technical scheme, compared with the prior art, the invention discloses the semiconductor laser array and the packaging method thereof, the laser array makes structural improvement on the ceramic carrier, two symmetrical notches are cut at the edge of the ceramic strip, and a discrete arrangement mode is adopted, so that the short circuit of a laser chip caused by the metalized connection of the upper surfaces of two adjacent ceramic strips can be avoided, the packaging stress is reduced, and the one-time packaging of hundreds of laser chips can be realized. Meanwhile, the packaging method is simple and convenient in assembly process, the requirement of a sintering process is reduced, and the packaged semiconductor laser array can obtain the optimal heat dissipation effect and the packaging stress is greatly reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating an overall structure of a semiconductor laser array according to the present invention;
FIG. 2 is a partially enlarged schematic view of a semiconductor laser array according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a positional relationship between a laser chip, a heat sink, and a discrete ceramic bar according to an embodiment of the present invention;
FIG. 4 illustrates a recess of one configuration in accordance with an embodiment of the present invention;
FIG. 5 illustrates an alternative configuration of a recess in accordance with an embodiment of the present invention;
FIG. 6 is a flow chart illustrating a method for packaging a semiconductor laser array according to the present invention;
FIG. 7 is a schematic view of a pretreatment process before welding the discrete ceramic bars according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In one aspect, referring to fig. 1 to 3, an embodiment of the present invention discloses a semiconductor laser array, including:
the laser chip 1, the laser chip 1 is equipped with a plurality of, the positive electrode of a plurality of laser chips 1 is set up in the syntropy, and the light-emitting direction is the same;
the laser chip comprises a heat sink 2, a plurality of heat sinks 2 are arranged, a plurality of laser chips 1 and the plurality of heat sinks 2 are vertically arranged and are sequentially arranged at intervals, and the adjacent laser chips 1 are welded with the heat sinks 2;
a plurality of discrete ceramic strips 3 are arranged, the plurality of discrete ceramic strips 3 are correspondingly arranged at the bottom of the heat sink 2, and the top ends of the discrete ceramic strips 3 are welded with the bottom surface of the heat sink 2;
the electrode connecting pieces 4 are respectively welded at two ends of a welding piece consisting of the laser chip 1 and the heat sink 2;
and the bottom ends of the heat sink bases 5 and the discrete ceramic strips 3 are welded with the heat sink bases 5.
In this embodiment, the heat sinks 2 and the laser chips 1 are sequentially arranged at intervals, the positive electrodes of all the laser chips 1 face the same direction, the positive electrodes and the negative electrodes cannot be arranged in opposite directions, and the light emitting direction faces the same direction, so that the plurality of laser chips 1 are electrically connected in series. Shown in fig. 1 is a laser array of 18 laser chips.
Meanwhile, referring to fig. 2, in the present embodiment, the electrode connecting pieces 4 include two positive electrode pieces 41 and two negative electrode pieces 42, the positive electrode piece 41 and the negative electrode piece 42 are respectively a positive electrode and a negative electrode of the laser, and both the two electrode connecting pieces 4 are welded to the heat sink 2.
In a specific embodiment, the top and bottom surfaces of the discrete ceramic strips 3 are coated with metal layers for welding, and the discrete ceramic strips 3 are welded to the heat sink 2 and the heat sink base 5 through the metal layers, respectively.
In a specific embodiment, the cross section of the discrete ceramic bar 3 is a rectangle-like structure, and both ends of the top of the rectangle are respectively recessed to form a notch 31.
In one specific embodiment, the notch 31 may be a right angle opening, as shown in FIG. 4, or an arcuate opening, as shown in FIG. 5.
The heat sink base 5 in this embodiment may be designed to be a water-through structure or a non-water-through structure, and is set reasonably according to actual needs.
In this embodiment, a discrete structure is adopted for the ceramic strips for heat dissipation and support, and the edges of the ceramic strips are made into a chamfer structure (i.e. two symmetrical notches are cut out), so that short circuit of a laser chip caused by metalized connection of the upper surfaces of two adjacent ceramic strips can be avoided, assembly is easy, the technological requirement of sintering is reduced, the packaging stress is reduced, and the optimal heat dissipation and stress reduction effects are obtained.
In a specific embodiment, the surface of the heat sink 2 is coated with a gold-tin solder layer, and the heat sink 2 is soldered to the laser chip 1, the discrete ceramic strips 3 and the electrode connecting pads 4 through the gold-tin solder layer.
In the present embodiment, the heat sink 2 may be made of tungsten copper, molybdenum copper, or the like.
In summary, the semiconductor laser array disclosed in the above embodiments has the following advantages compared with the prior art:
this laser array makes structural improvement to ceramic carrier, cuts out the edge of ceramic strip into the notch of two symmetries to adopt the discrete arrangement mode, both can avoid two adjacent ceramic strip upper surface metallization to connect and lead to the laser chip short circuit, still reduced the encapsulation stress, can realize the disposable encapsulation of establishing ties of dozens of laser chip more than or even one hundred, can reduce chip encapsulation stress, improve operational reliability.
On the other hand, referring to fig. 6, the embodiment of the invention also discloses a packaging method of a semiconductor laser array, which includes the following steps:
s1: coating a layer of gold-tin solder on the surface of the heat sink;
s2: arranging the heat sinks and the laser chips at intervals in sequence, and pressing the heat sinks and the laser chips tightly through a tool clamp;
s3: welding electrode connecting sheets at two ends of the welded parts of the pressed heat sink and the laser chip respectively;
s4: preprocessing the vertical ceramic strips before welding;
s5: and welding the top surface of the discrete ceramic strip with the bottom surface of the heat sink, and welding the bottom surface of the discrete ceramic strip with the top of the heat sink seat.
In this embodiment, the heat sink and the bottom of the laser chip must be made of insulating and thermally conductive materials, and ceramic materials are usually selected. And in the packaging process, the laser chip, the heat sink, the ceramic and the electrode connecting sheet are packaged at one time.
In a specific embodiment, referring to fig. 7, step S4 specifically includes:
s401: cutting two ends of the top of the vertical ceramic strip to form an invaginated notch;
s402: and coating a metal layer for welding on the top surface and the bottom surface of the discrete ceramic strip.
Specifically, the processing mode of the edge of the ceramic strip can be realized by adopting modes of laser cutting, grinding wheel scribing and the like, and the cost is low.
In this embodiment, a semiconductor laser array of a discrete ceramic package can be realized by soldering a predetermined number of heat sinks, chips, and ceramic bars in the manner shown in fig. 3 on a heat sink base by low-temperature solder. The discrete ceramic packaging structure can realize the one-time packaging of one chip to hundreds of chips without disassembling into a plurality of discrete devices, and can realize the high-power density packaging of a semiconductor laser array.
In summary, compared with the prior art, the method for packaging the semiconductor laser array disclosed by the embodiment of the invention has the following advantages:
the packaging method has simple and convenient assembly process and reduces the requirement of a sintering process, the ceramic strips of the semiconductor laser array packaged by the method are of a discrete structure and are not limited by the number of chips, and the number of the ceramic strips can be one, more than one or more than one hundred, the laser array is not damaged by packaging stress, and the packaged semiconductor laser array can obtain the optimal heat dissipation effect. Through discrete ceramic packaging mode, can realize the disposable encapsulation of high power density's laser chip, compare with current whole ceramic structure, discrete ceramic packaging mode can effectively reduce ceramic structure to the encapsulation stress of chip, and the quantity of encapsulating the chip is unrestricted.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (7)

1. A semiconductor laser array, comprising:
the laser device comprises a plurality of laser chips, wherein positive electrodes of the plurality of laser chips are arranged in the same direction, and the light emitting directions of the laser chips are the same;
the laser chip comprises a plurality of heat sinks, a plurality of laser chips and a plurality of heat sinks are vertically arranged and are sequentially arranged at intervals, and the adjacent laser chips are welded with the heat sinks;
a plurality of discrete ceramic strips are arranged, the plurality of discrete ceramic strips are correspondingly arranged at the bottom of the heat sink, and the top ends of the discrete ceramic strips are welded with the bottom surface of the heat sink;
the electrode connecting pieces are respectively welded at two ends of a welding piece consisting of the laser chip and the heat sink;
and the bottom end of the discrete ceramic strip is welded with the heat sink.
2. The semiconductor laser array according to claim 1, wherein the top and bottom surfaces of the discrete ceramic bars are coated with a metal layer for soldering, and the discrete ceramic bars are soldered to the heat sink and the heat sink base, respectively, via the metal layer.
3. The semiconductor laser array according to claim 1 or 2, wherein the cross section of the discrete ceramic bar is a quasi-rectangular structure, and two ends of the top of the rectangle are respectively recessed to form a notch.
4. A semiconductor laser array according to claim 3, wherein the recess is a right angle or arc shaped opening.
5. A semiconductor laser array according to claim 1 wherein the surface of the heat sink is coated with a layer of gold-tin solder, and the heat sink is soldered to the laser chip, the discrete ceramic bar and the electrode connection pad by the layer of gold-tin solder.
6. A method for packaging a semiconductor laser array, comprising:
step 1: coating a layer of gold-tin solder on the surface of the heat sink;
step 2: arranging the heat sinks and the laser chips at intervals in sequence, and pressing the heat sinks and the laser chips tightly through a tool clamp;
and step 3: welding electrode connecting sheets at two ends of the welded parts of the pressed heat sink and the laser chip respectively;
and 4, step 4: preprocessing the vertical ceramic strips before welding;
and 5: and welding the top surface of the discrete ceramic strip with the bottom surface of the heat sink, and welding the bottom surface of the discrete ceramic strip with the top of the heat sink seat.
7. The method for packaging a semiconductor laser array according to claim 6, wherein the step 4 specifically comprises:
step 401: cutting two ends of the top of the vertical ceramic strip to form an invaginated notch;
step 402: and coating a metal layer for welding on the top surface and the bottom surface of the discrete ceramic strip.
CN201911108876.7A 2019-11-13 2019-11-13 Semiconductor laser array and packaging method thereof Active CN111082306B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113113845A (en) * 2021-04-19 2021-07-13 中国科学院半导体研究所 Laser module based on photonic crystal structure chip

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CN208580947U (en) * 2018-08-31 2019-03-05 潍坊华光光电子有限公司 A kind of semiconductor laser stacks modularized encapsulation structure
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US4698660A (en) * 1982-03-30 1987-10-06 Fujitsu Limited Resin-molded semiconductor device
JP2003273437A (en) * 2002-03-15 2003-09-26 Yamaha Corp Package for optical semiconductor module
CN101355092A (en) * 2007-07-26 2009-01-28 采钰科技股份有限公司 Encapsulation structure for optoelectronic device
CN102094219A (en) * 2009-12-15 2011-06-15 上海太阳能工程技术研究中心有限公司 Electrode assembly of ZnC12 fused salt electrolytic zinc
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