CN210078632U

CN210078632U - Semiconductor laser module

Info

Publication number: CN210078632U
Application number: CN201920293641.9U
Authority: CN
Inventors: 赵景峰
Original assignee: Wuhan Senputuo Photoelectric Co Ltd
Current assignee: Wuhan Senputuo Photoelectric Co Ltd
Priority date: 2019-03-07
Filing date: 2019-03-07
Publication date: 2020-02-18
Anticipated expiration: 2029-03-07

Abstract

The utility model discloses a semiconductor laser module, semiconductor laser module includes base and laser array structure, the laser array structure is located on the base, the laser array structure includes plate electrode and many laser tube cores, each the laser tube core corresponds three kinds of different wavelength, the both ends of plate electrode are positive terminal and negative pole end respectively for correspond the positive negative pole of connecting the power, many laser tube cores are the interval along positive negative pole direction and lay in on the plate electrode, in order to send laser. The utility model provides an among the technical scheme, through inciting somebody to action the laser tube core of semiconductor laser module is provided with the laser tube core of three kinds of different wavelengths, and multiple wavelength can satisfy the demand of the skin of multiple colour, need not to adjust many times, and it is more convenient to operate, and can reach better effect of mouling.

Description

Semiconductor laser module

Technical Field

The utility model relates to a cosmetic apparatus field of medical science, concretely relates to semiconductor laser module.

Background

Semiconductor laser modules, also known as semiconductor laser modules, are a class of lasers that mature earlier and progress faster. Because of its wide wavelength range, simple manufacture, low cost, easy mass production, small volume, light weight and long service life, the variety development is fast, the application range is wide, and at present, more than 300 kinds of the products are available. The semiconductor laser module is widely applied to laser ranging, laser radar, ignition and detonation, detecting instruments, beauty instruments and the like, and forms a wide market. Laser depilation is a technology which is based on a selective photothermal dynamics principle, laser can penetrate through the surface layer of skin to reach hair follicles at the roots of hairs by reasonably adjusting energy pulse width of laser wavelength, and light energy is absorbed and converted into heat energy for destroying hair follicle tissues, so that the hairs lose regeneration capacity, do not damage peripheral tissues and have slight pain. However, in the existing laser depilation module, one module generally has only one wavelength, and the depilation effect on the skin with different colors can be greatly different, and the wavelength cannot be adjusted.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, the utility model discloses a main aim at provides a semiconductor laser module, aims at solving the problem that current laser module can not satisfy multiple skin demand.

In order to achieve the above object, the present invention provides a semiconductor laser module, including:

a base;

the laser array structure is arranged on the base and comprises a plate electrode and a plurality of laser tube cores, wherein the laser tube cores correspond to three different wavelengths, the two ends of the plate electrode are respectively a positive end and a negative end and are used for correspondingly connecting the positive and negative electrodes of a power supply, and the plurality of laser tube cores are arranged on the plate electrode at intervals along the positive and negative electrode directions and are used for emitting laser.

Optionally, the three different wavelengths corresponding to the laser die are λ₁、λ₂And λ₃Said λ₁The value range of (A) is 750nm to 780nm, the lambda₂The value range of (A) is 790 to 830nm, the lambda value₃The value range of (A) is 1040 nm-1080 nm.

Optionally, said λ₁Wavelength laser die, said λ₂Wavelength laser die and said λ₃The wavelength laser tube cores are respectively provided with a plurality of laser tube cores, and the plurality of laser tube cores are arranged along the anode and cathode directions of the electrode plate in an alternating mode.

Optionally, each of the laser tube cores is arranged in a long strip shape, a direction perpendicular to the positive and negative electrode directions of the electrode plate on the surface of the electrode plate where the laser tube cores are arranged is horizontal, the long end face of each of the laser tube cores is arranged along the horizontal direction, and a plurality of laser tube cores are arranged along the horizontal direction of the surface of the electrode plate.

Optionally, the semiconductor laser module further includes a heat dissipation structure, the heat dissipation structure is connected to the laser array structure, and the heat dissipation structure includes:

the mounting seat is arranged on the base;

and the radiating fin is arranged on the mounting seat, is arranged on one surface of the electrode plate, is opposite to the laser tube core, and is used for radiating the laser array structure.

Optionally, the mounting seat and the base are respectively provided with a waterway channel which is correspondingly arranged.

Optionally, the semiconductor laser module further comprises a housing, the housing is coated with the laser array structure and the heat dissipation structure, an opening is formed in a position corresponding to the laser tube core on the housing, and the opening is gradually reduced from the laser tube core.

Optionally, the open end is provided with a light guide vertebra.

The utility model provides an among the technical scheme, through inciting somebody to action the laser tube core of semiconductor laser module is provided with the laser tube core of three kinds of different wavelengths, and different wavelengths can satisfy the demand of different skin colours, need not to adjust many times, and it is more convenient to operate, and can reach better effect of mouling.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of an embodiment of a semiconductor laser module according to the present invention;

fig. 2 is a schematic structural view of the semiconductor laser module of fig. 1 without a housing;

fig. 3 is a front view of the semiconductor laser module of fig. 1;

fig. 4 is a bottom view of the semiconductor laser module of fig. 1;

fig. 5 is a left side view of the semiconductor laser module of fig. 1.

The reference numbers illustrate:

reference numerals	Name (R)	Reference numerals	Name (R)
				1	Base seat	4	Heat radiation structure
2	Laser array structure	41	Heat sink
				21	Laser tube core	42	Mounting seat
22	Electrode plate	5	Light guide vertebra
				3	Shell body

The object of the present invention is to provide a novel and advantageous solution for the above mentioned problems.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It should be noted that, if the present invention relates to a directional indication, the directional indication is only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture, and if the specific posture is changed, the directional indication is changed accordingly.

In addition, if there is a description relating to "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" appearing throughout includes three juxtapositions, exemplified by "A and/or B" including either A or B or both A and B. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.

In view of this, the present invention provides a semiconductor laser module, which is mainly used in an epilation apparatus, and fig. 1 to 5 illustrate an embodiment of the semiconductor laser module provided by the present invention.

Referring to fig. 1 to 2, in this embodiment, the semiconductor laser module includes a base 1 and a laser array structure 2, the laser array structure 2 is disposed on the base 1, the laser array structure 2 includes an electrode plate 22 and a plurality of laser dies 21, each of the laser dies 21 corresponds to three different wavelengths, two ends of the electrode plate 22 are respectively a positive end and a negative end for connecting with a positive electrode and a negative electrode of a power supply, the plurality of laser dies 21 are disposed on the electrode plate 22 at intervals along a positive and negative direction, and the laser dies 21 include three dies with different wavelengths for emitting laser beams with different wavelengths, so as to be suitable for users with various skins.

The utility model provides an among the technical scheme, through inciting somebody to action semiconductor laser module's laser tube core 21 is provided with the laser tube core 21 of three kinds of different wavelengths, and different wavelengths can satisfy the skin demand and the treatment, need not to adjust many times, and it is more convenient to operate, and can reach better effect of mouling.

In this embodiment, three different wavelengths corresponding to the laser die 21 are set to λ₁、λ₂And λ₃Said λ₁The value range of (A) is 750nm to 780nm, the lambda₂The value range of (A) is 790 to 830nm, the lambda value₃The value range of the laser is 1040 nm-1080 nm, and the laser with different wave bands is used for adapting to the requirements of different skins.

Further, in the present embodiment, λ₁Is 760nm, lambda₂Is 810nm, lambda₃Is 1060 nm. The wavelength of 760nm is the wavelength which is most suitable for white skin people to remove hairs, and the wavelength of 810nm is the wavelength which is most suitable for Asian people to remove hairs, is suitable for all hair types, treats deeper hair follicles and residual hairs, and accurately destroys thicker hair follicles without causing damage to adjacent tissues. Laser light of 1060nm wavelength is suitable for brown and blackish skin, has high permeability and low influence on epidermal melanin, and can be used for safe treatmentThe deep penetration is performed to effectively treat thicker and darker hair in the pubic hair and scalp area, thereby achieving better effect.

Further, in this embodiment, the output optical power of the 760nm wavelength laser die is 60 w to 360 w, the output optical power of the 810nm wavelength laser die is 60 w to 360 w, and the output optical power of the 1060nm wavelength laser die is 60 w to 360 w. The laser dies have various types, specifically, in the embodiment, the 760nm laser die has a type LT-01-2465-760-50, the 810nm laser die has a type LT-1500-01-2465, and the 1060nm laser die has a type LT-1200-01-2682.

Referring to fig. 3, in the present embodiment, in a semiconductor laser module, a plurality of laser dies with wavelength of 760nm, a plurality of laser dies with wavelength of 810nm, and a plurality of laser dies with wavelength of 1060nm are respectively disposed, and a plurality of laser dies 21 are sequentially stacked in a staggered manner along the positive and negative directions of the electrode plate 22. The arrangement of the laser dies with 760nm wavelength, the laser dies with 810nm wavelength and the laser dies with 1060nm wavelength is not particularly limited, as long as the arrangement form that the light segments with the wavelengths are uniformly distributed is within the protection scope of the present application.

In this embodiment, each of the laser dies 21 is arranged in a long strip shape, the long end face of each of the laser dies 21 is transversely arranged on the electrode plate 22 along a direction perpendicular to the positive and negative directions of the electrode plate 22, and a plurality of the laser dies 21 are transversely arranged along the surface of the electrode plate 22. The plurality of laser tube cores 21 are arranged in an array structure and are arranged on the electrode plate 22, the array structure can be arranged in a plurality and is placed on the electrode plate 22 in parallel, and the arrangement mode of the laser tube cores 21 can be correspondingly arranged according to the requirements of customers so as to adapt to the illumination requirements of different areas.

In this embodiment, the semiconductor laser module further includes a heat dissipation structure 4, where the heat dissipation structure 4 is connected to the laser array structure 2, and is configured to dissipate heat of the laser array structure 2, the heat dissipation structure 4 includes a mounting seat 42 and a heat dissipation fin 41, and the mounting seat 42 is disposed on the base 1; the heat sink 41 is mounted on the mounting seat 42 and is disposed on a surface of the electrode plate 22 opposite to the laser die 21 for dissipating heat of the laser array structure 2. The laser die 21 emits a large amount of heat when it emits light, and in order to maintain the life of the device, it is necessary to add a heat dissipation structure 4 to dissipate the heat of the laser die 21. The arrangement form of the heat dissipation structure 4 is not limited to the above one, and the heat dissipation structure 4 may also be configured to dissipate heat with a fan, or may also be configured to dissipate heat with an air conditioning structure, etc., so that the arrangement form of the heat dissipation structure 4 that can dissipate heat of the laser die 21 is within the scope of the present application.

Further, referring to fig. 4, the installation seat 42 and the base 1 are respectively provided with a corresponding waterway channel. Circulating cooling water is introduced into the waterway channel, the water temperature of the cooling water is controlled to be 23-27 ℃, and the water pressure is controlled to be 0.4-0.6 MPa, so that heat conducted by the radiating fins 41 is taken away, and the cooling effect is improved.

In this embodiment, the semiconductor laser module further includes a housing 3, the housing 3 is a cladding the laser array structure 2 and the heat dissipation structure 4 is provided, the housing 3 and the laser tube core 21 are provided with openings corresponding to each other, the openings are from the laser tube core is outwardly arranged to be gradually smaller, so that the light emitted is more concentrated. The housing 3 is provided with a mounting structure for mounting on the hair removal device or other devices, which is determined according to the specific requirements of each device and is not limited herein.

Further, referring to fig. 5, a light guide vertebra 5 is disposed at the end of the opening to guide light in a certain direction, and the shape of the light guide vertebra 5 may be designed according to actual requirements, which is not specifically limited herein.

The above only is the preferred embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structures made by the contents of the specification and the drawings or directly or indirectly applied to other related technical fields are included in the same way in the protection scope of the present invention.

Claims

1. A semiconductor laser module, comprising:

a base;

2. The semiconductor laser module of claim 1, wherein the three different wavelengths for the laser die are each λ₁、λ₂And λ₃Said λ₁The value range of (A) is 750nm to 780nm, the lambda₂The value range of (A) is 790 to 830nm, the lambda value₃The value range of (A) is 1040 nm-1080 nm.

3. The semiconductor laser module of claim 2, wherein λ₁Wavelength laser die, said λ₂Wavelength laser die and said λ₃The wavelength laser tube cores are respectively provided with a plurality of laser tube cores, and the plurality of laser tube cores are arranged along the anode and cathode directions of the electrode plate in an alternating mode.

4. The semiconductor laser module according to claim 1, wherein each of the laser dies is arranged in an elongated shape, a direction perpendicular to a direction of the positive and negative electrodes of the electrode plate on a surface of the electrode plate on which the laser die is provided is a transverse direction, a long end surface of each of the laser dies is arranged to extend in the transverse direction, and a plurality of the laser dies are arranged in the transverse direction on the surface of the electrode plate.

5. The semiconductor laser module of claim 1, further comprising a heat dissipation structure coupled to the laser array structure arrangement, the heat dissipation structure comprising:

the mounting seat is arranged on the base;

6. A semiconductor laser module as claimed in claim 5, wherein the mounting base and the base are respectively provided with corresponding water channels.

7. The semiconductor laser module of claim 5, further comprising a housing, wherein the housing is disposed to cover the laser array structure and the heat dissipation structure, and wherein an opening is disposed on the housing corresponding to the laser die, and the opening is gradually smaller from the laser die.

8. The semiconductor laser module of claim 7, wherein the open end is provided with a light guiding cone.