CN102324698A - Multi-wavelength high-power semiconductor laser light source system - Google Patents
Multi-wavelength high-power semiconductor laser light source system Download PDFInfo
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- CN102324698A CN102324698A CN201110283631A CN201110283631A CN102324698A CN 102324698 A CN102324698 A CN 102324698A CN 201110283631 A CN201110283631 A CN 201110283631A CN 201110283631 A CN201110283631 A CN 201110283631A CN 102324698 A CN102324698 A CN 102324698A
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Abstract
The invention provides a multi-wavelength high-power semiconductor laser light source system. The multi-wavelength high-power semiconductor laser light source system comprises a plurality of semiconductor lasers which output different wavelengths and are arranged in a centralizing manner, wherein the front ends of the light-emitting surfaces of the semiconductor lasers are in sealed and fixed connection with optical waveguides which can output laser beams after the laser beams are subjected to perfect reflection by the optical waveguides. According to the invention, lasers of the semiconductor lasers are outputted after the lasers are subjected to perfect reflection by the optical waveguides, each semiconductor laser can be individually controlled, and the wavelengths of the lasers are different, thus the outputted multiple wavelengths can have excellent uniformity; and in addition, the multi-wavelength high-power semiconductor laser light source system has the advantages of simple realization for process, high/low temperature resistance for optical components and parts, and greatly-enhanced and more reliable capabilities in resistance to shock and vibration.
Description
Technical field
The invention belongs to the semiconductor laser application, relate to a kind of multi-wavelength high-power semiconductor laser light-source system, applicable to laser medicine.
Background technology
Laser medicine is as a key areas of laser applications, develops very fastly, progressively moves to maturity.Volume is little, in light weight because of having, the life-span is long, low in energy consumption for semiconductor laser, wavelength covers wide characteristics, is specially adapted to the manufacturing of Medical Devices.
The semiconductor laser wavelength scope is wide, and the semiconductor laser irradiating biological tissue of different wave length can produce different biological effects, and corresponding different laser methods of treatment is applied to the treatment of various disease
In the medical cosmetology field, one of main application of laser is exactly a laser depilation, has developed quite ripe in American-European developed country.The depilation Wavelength of Laser is good with 694-1064nm, and common wavelengths has 755nm, 800nm, 1064nm and 694nm clinically, and is the most common with the above two, and these wavelength are the matrix of hair shaft, hair follicle epidermis and the compound pigment of heating deep optionally.
There is theory to think; When optical maser wavelength is in the color base absorption peak; Its photon energy is transferred to and finally has on the clinical effectiveness color base molecule, and that color base competition on every side absorbs is minimum, and when pulsewidth is equal to or less than the thermal relaxation time of this tissue; The thermal effect that laser produced only limits to target tissue, and does not cause the surrounding tissue fire damage.In laser depilation, the melanin granule of hair follicle and hair is the target color base of this laser, and laser destroys hair matrix through destroying hair follicle, stops hair regeneration.
The pulsewidth of laser, energy and wavelength are the important parameters that directly influences the laser depilation effect.Color base reduces along with the increase of wavelength the absorption of laser, so the short more laser of wavelength, and color base absorbs strong more.But the melanin of the epidermis laser absorption to the short wavelength too is very strong, so the degree of depth of the long laser penetration reply of ripple is dark more.
The laser depilation system of commercial application has at present: ruby laser (wavelength 694nm), alexandrite laser (wavelength 755nm), semiconductor laser (wavelength 810nm) and accent Q neodymium doped yttrium aluminium garnet laser (wavelength 1064nm).Wherein the semiconductor laser depilation has been proved to be a kind of safety and efficient laser depilation mode.
According to estimates, the laser depilation operation of carrying out in the global range in 2010 reaches 5,000,000 person-times, and the 810nm semiconductor laser can produce thermal effect well by intrafollicular melanin absorption, destroys hair follicle, is the standard of laser depilation.But for the different colours of skin, different hairs, when carrying out laser depilation, the optical maser wavelength of selecting for use is also different.
Semiconductor laser is the skin reconstruction operations in another important application of beauty treatment fields, is used for smoothing wrinkle, tender skin.The laser of 1450nm wavelength is by the moisture absorption in the dermal collagen tissue, produces thermal effect, and the regeneration of stimulation collagen and reinventing makes the skin smooth delicacy that becomes, and recovers elasticity.1.0 the laser of micron waveband, can be used for treating freckle, traumatic pigmentation, dispel tatoo, eyebrow tattooing, informer etc. are black, the cyanine pathology; 0.5 the laser of micron waveband is used to treat nevus flammeus, shallow-layer coffee spot, dispels redness, brownly tatoos, red, brown pigmentation pathology such as eyebrow tattooing, lip tattooing.Wavelength is that the semiconductor laser low-intensity irradiation of 800～900nm can stimulate the local blood circulation, promotes cell to grow, improve immunity, alleviating pain and promote wound healing etc., has been widely used in rehabilitation and physiotherapy.
The most frequently used thermal source is the semiconductor laser that produces the 810nm near-infrared laser in the ophthalmology; The laser piercing power of this wavelength is strong. and refractive media is minimum to its absorption; And the adjustable scope of hot spot is bigger; Domestic and international a lot of research report shows that low-power 810nm semiconductor laser can be used for treating various intractable glaucomas, silicone oil injects the intractable high intraocular pressure of postoperative, and amphiblestroid light coagulates and fixing etc.
Full-fledged along with semiconductor laser technique. the continuous expansion of laser wavelength range, self distinctive advantage constantly increases. and it also in continuous expansion, has almost covered the range of application of other laser in the application of medical field.It has not only remedied high energy CO laser and has been difficult for Optical Fiber Transmission, unhandy shortcoming, and has remedied the shortcoming that lamp light-pumped solid state laser efficient is low, heat radiation bothers, and is expected to become the main flow of medical laser.
The apparatus for laser depilation of Chinese patent Granted publication number Japanese Ya Mang Co., Ltd utility model for CN1452465 discloses.This device adopts power output 5mW-1500mw, and the semiconductor laser of wavelength 600nm-1600nm loses hair or feathers, because system's power output is low, spot size is little, and wavelength output is also non-adjustable, and depilation efficient is very low.
Publication number is a kind of multifunction laser beauty treatment of the patent of CN1498601A machine; It uses solid state laser, and it can only realize the output of two different wave lengths as light source; If will realize the output of two above wavelength, it is that Machine Design or optical design all will be very complicated.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned background technology, a kind of multi-wavelength high-power semiconductor laser light-source system is provided, its output Wavelength of Laser is controlled, also can realize the output of high power multi-wavelength, and uniformity is better.
The objective of the invention is to solve through following technical scheme:
A kind of multi-wavelength high-power semiconductor laser light-source system; Comprise fiber waveguide and a plurality of semiconductor laser; Described a plurality of semiconductor laser is for concentrating the different a plurality of semiconductor lasers of output wavelength arrange, and described fiber waveguide is fixedly connected on the laser beam that the light-emitting area front end of a plurality of semiconductor lasers is used for that a plurality of semiconductor lasers are sent and carries out exporting after the total reflection.
Adopt the electric connection mode of parallel connection or series connection between the different semiconductor laser of above-mentioned a plurality of output wavelength.
Above-mentioned semiconductor laser generally adopts single tube, crust bar or folded formation formula.
Above-mentioned fiber waveguide can adopt transparent clava, and this transparent clava inside is hollow or solid.
Above-mentioned fiber waveguide also can adopt the metal clava, and this metal clava inside is hollow.
The cross section of above-mentioned fiber waveguide generally is designed to rectangle or circular.
The input of above-mentioned fiber waveguide is preferably male type, and the radius of curvature of outer convex surface is greater than 1/2 of fiber waveguide input minor face long value.
Operation principle: each semiconductor laser can be controlled separately; The wavelength of each laser is inequality; Can select different wavelengths to different skin matter or therapeutic purposes; Through having good homogeneous property after the fiber waveguide output, after exporting laser, the laser of two or more wavelength realizes having good homogeneous property after the multi-wavelength output behind the laser output laser of each wavelength through fiber waveguide if connect simultaneously.
The present invention has following beneficial effect:
The present invention carries out a plurality of semiconductor laser laser to penetrate after the total reflection through fiber waveguide; Each semiconductor laser can be controlled separately; The wavelength of each laser is inequality; Can select different wavelengths to different skin matter or therapeutic purposes, through having good homogeneous property after the fiber waveguide output, realize having good homogeneous property after the multi-wavelength output through fiber waveguide after the laser of two or more wavelength is exported laser behind the laser output laser of each wavelength if connect simultaneously.
The present invention only realizes exporting after the laser beam total reflection through an optical component, and technology realizes simple, the optical component high-low temperature resistant, and the ability of vibration and shock resistant aspect improves greatly, and is more reliable.
Description of drawings
Fig. 1 is an embodiment of the invention structural representation.
Fig. 2 is the beam Propagation path profile of slow-axis direction in fiber waveguide of the embodiment of the invention.
Fig. 3 be the embodiment of the invention in the fiber waveguide exit laser at the intensity distribution of quick shaft direction (vertical direction).
Fig. 4 is the intensity distribution of embodiment of the invention laser slow-axis direction (horizontal direction) in the fiber waveguide exit.
Fig. 5 be the embodiment of the invention in the fiber waveguide exit hot spot figure, reflect the size and the uniformity of hot spot intuitively.
The drawing reference numeral explanation: 1 is semiconductor laser; 2 is fiber waveguide; 3 is laser beam.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
Referring to Fig. 1 multi-wavelength high-power semiconductor laser light resource that is used for medical treatment of the present invention, comprise semiconductor laser 1, it is characterized in that: semiconductor laser 1 laser emitting end connects with fiber waveguide 2, is used for laser beam 3 is carried out exporting after the total reflection.
Described semiconductor laser 1 number is two or more;
When described semiconductor laser 1 number is a plurality of, between the semiconductor laser 1 parallel connection or series connection;
Described semiconductor laser 1 can be single tube, crust bar, folded battle array;
Said fiber waveguide 2 places semiconductor laser 1 light-emitting area front end, is used for laser beam 3 is carried out exporting after the total reflection.
Described fiber waveguide 2 can be rectangle or circular transparent clava for cross section, and this clava inside is hollow or solid.
Described fiber waveguide 2 can be rectangle or circular metal clava for cross section, and this clava inside is hollow.
Operation principle: each semiconductor laser 1 can be controlled separately; The wavelength of each laser is inequality; Can select different wavelengths to different skin matter or therapeutic purposes; Through having good homogeneous property after the fiber waveguide output, after exporting laser, the semiconductor laser 1 of two or more wavelength realizes having good homogeneous property after the multi-wavelength output behind the semiconductor laser 1 output laser of each wavelength through fiber waveguide if connect simultaneously.
Fig. 2 is the beam Propagation path profile of slow-axis direction in fiber waveguide of the embodiment of the invention.Fig. 3 is the intensity distribution of embodiment of the invention fiber waveguide exit laser in quick shaft direction (vertical direction), can find out that laser is even in the intensity distributions of quick shaft direction (vertical direction) in the fiber waveguide exit.Fig. 4 is the intensity distribution of embodiment of the invention fiber waveguide exit laser in slow-axis direction (horizontal direction), can find out that laser is even in the intensity distributions of slow-axis direction (horizontal direction).As shown in Figure 5, with reference to the intensity scale on right side, embodiment of the invention fiber waveguide exit hot spot figure (left hand view) can reflect the size and the uniformity of hot spot intuitively.
Claims (7)
1. multi-wavelength high-power semiconductor laser light-source system; It is characterized in that: comprise fiber waveguide and a plurality of semiconductor laser; Described a plurality of semiconductor laser is for concentrating the different a plurality of semiconductor lasers of output wavelength arrange, and described fiber waveguide is fixedly connected on the laser beam that the light-emitting area front end of a plurality of semiconductor lasers is used for that a plurality of semiconductor lasers are sent and carries out exporting after the total reflection.
2. multi-wavelength high-power semiconductor laser light-source system according to claim 1 is characterized in that: the electric connection mode that adopts parallel connection or series connection between said a plurality of semiconductor lasers.
3. multi-wavelength high-power semiconductor laser light-source system according to claim 1 is characterized in that: described semiconductor laser is single tube, crust bar or folded formation formula.
4. multi-wavelength high-power semiconductor laser light-source system according to claim 1 is characterized in that: described fiber waveguide is transparent clava, and this transparent clava inside is hollow or solid.
5. multi-wavelength high-power semiconductor laser light-source system according to claim 1 is characterized in that: described fiber waveguide is the metal clava, and this metal clava inside is hollow.
6. multi-wavelength high-power semiconductor laser light-source system according to claim 1 is characterized in that: the cross section of described fiber waveguide is a rectangle or circular.
7. according to the arbitrary described multi-wavelength high-power semiconductor laser light-source system of claim 1 to 6, it is characterized in that: the input of fiber waveguide is a male type, and the radius of curvature of outer convex surface is greater than 1/2 of fiber waveguide input minor face long value.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110283631A CN102324698A (en) | 2011-09-22 | 2011-09-22 | Multi-wavelength high-power semiconductor laser light source system |
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| CN201110283631A CN102324698A (en) | 2011-09-22 | 2011-09-22 | Multi-wavelength high-power semiconductor laser light source system |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242048A (en) * | 2014-10-09 | 2014-12-24 | 西安炬光科技有限公司 | Packaging structure of conduction-cooled stack semiconductor laser |
| CN108187240A (en) * | 2017-12-15 | 2018-06-22 | 重庆云帆医疗设备有限公司 | A kind of anti-wrinkle therapeutic equipment |
| DE102017210602B3 (en) | 2017-06-23 | 2018-07-26 | Jenoptik Laser Gmbh | Diode laser with housing |
| CN109768472A (en) * | 2019-03-07 | 2019-05-17 | 武汉森普拓光电有限公司 | A kind of semiconductor laser module |
| US10541508B2 (en) | 2017-06-23 | 2020-01-21 | Jenoptik Optical Systems Gmbh | Diode laser with housing |
| CN112602274A (en) * | 2019-08-02 | 2021-04-02 | 京瓷株式会社 | Optical fiber power supply system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1168745A (en) * | 1994-10-27 | 1997-12-24 | 杜可明 | Arrangement for guiding and shaping beams from a rectilinear laser diode array |
| CN1883087A (en) * | 2003-12-10 | 2006-12-20 | 松下电器产业株式会社 | Laser light source, and two-dimensional image forming device |
| US7787106B2 (en) * | 2005-10-28 | 2010-08-31 | The United States Of America As Represented By The Department Of Health And Human Services | Particle image velocimetry system having an improved hollow-waveguide-based laser illumination system |
-
2011
- 2011-09-22 CN CN201110283631A patent/CN102324698A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168745A (en) * | 1994-10-27 | 1997-12-24 | 杜可明 | Arrangement for guiding and shaping beams from a rectilinear laser diode array |
| CN1883087A (en) * | 2003-12-10 | 2006-12-20 | 松下电器产业株式会社 | Laser light source, and two-dimensional image forming device |
| US7787106B2 (en) * | 2005-10-28 | 2010-08-31 | The United States Of America As Represented By The Department Of Health And Human Services | Particle image velocimetry system having an improved hollow-waveguide-based laser illumination system |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242048A (en) * | 2014-10-09 | 2014-12-24 | 西安炬光科技有限公司 | Packaging structure of conduction-cooled stack semiconductor laser |
| CN104242048B (en) * | 2014-10-09 | 2017-02-15 | 西安炬光科技有限公司 | Packaging structure of conduction-cooled stack semiconductor laser |
| DE102017210602B3 (en) | 2017-06-23 | 2018-07-26 | Jenoptik Laser Gmbh | Diode laser with housing |
| DE202017007096U1 (en) | 2017-06-23 | 2019-07-04 | Jenoptik Optical Systems Gmbh | Diode laser with housing |
| US10541508B2 (en) | 2017-06-23 | 2020-01-21 | Jenoptik Optical Systems Gmbh | Diode laser with housing |
| CN108187240A (en) * | 2017-12-15 | 2018-06-22 | 重庆云帆医疗设备有限公司 | A kind of anti-wrinkle therapeutic equipment |
| CN109768472A (en) * | 2019-03-07 | 2019-05-17 | 武汉森普拓光电有限公司 | A kind of semiconductor laser module |
| CN112602274A (en) * | 2019-08-02 | 2021-04-02 | 京瓷株式会社 | Optical fiber power supply system |
| CN112602274B (en) * | 2019-08-02 | 2022-05-03 | 京瓷株式会社 | Optical fiber power supply system |
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Application publication date: 20120118 |