CN214227348U - Multi-electrode semiconductor laser - Google Patents
Multi-electrode semiconductor laser Download PDFInfo
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- CN214227348U CN214227348U CN202120235506.6U CN202120235506U CN214227348U CN 214227348 U CN214227348 U CN 214227348U CN 202120235506 U CN202120235506 U CN 202120235506U CN 214227348 U CN214227348 U CN 214227348U
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Abstract
The utility model discloses a multi-electrode semiconductor laser, belonging to the technical field of laser, comprising a multi-electrode semiconductor laser chip and a heat sink; the multi-electrode semiconductor laser chip comprises a plurality of chip areas; the chip area comprises a positive electrode and a negative electrode; the heat sink comprises a negative pole metallization layer and a plurality of mutually insulated positive pole metallization layers; the plurality of positive pole metallization layers correspond to the positive poles of the chip areas of the plurality of chip areas one by one; the negative electrodes of the chip areas and the negative electrode metallization layer of the plurality of chip areas are electrically conducted; the positive pole metallization layer and the positive pole of the chip area are in one-to-one correspondence and are electrically conducted. The utility model discloses a multi-electrode semiconductor laser can satisfy and pour into the electric current of variation in size at different electrodes, can not take place the short circuit between the different electrode couples to realize multi-electrode semiconductor laser chip's function, heat dispersion is good, and is reliable and stable.
Description
Technical Field
The utility model belongs to the technical field of the laser, specifically speaking relates to a multi-electrode semiconductor laser.
Background
The semiconductor laser has the advantages of high electro-optical efficiency, long service life, high reliability and the like, and has wide application prospect in the fields of material processing, military and national defense, communication, medical treatment, cosmetology and the like. A semiconductor laser chip is the core of a semiconductor laser. The conventional semiconductor laser chip generally has only one pair of electrodes, and the function of the conventional semiconductor laser chip can be realized by welding the chip on a heat sink substrate by adopting an inverted packaging structure. Compared with the traditional semiconductor laser chip, the multi-electrode semiconductor laser chip has the characteristics of good beam quality and high brightness, and has excellent application prospect. However, for the multi-electrode semiconductor laser chip, because there are more than two pairs of electrodes, i.e. the common negative electrode and the insulation between the positive electrodes, if the conventional semiconductor laser chip packaging structure is adopted, a short circuit occurs between different electrode pairs of the multi-electrode semiconductor laser chip, and separate electrical injection cannot be performed, i.e. different currents with different magnitudes are injected into different electrodes, and finally the function of the multi-electrode semiconductor laser chip cannot be realized. When the high-power semiconductor laser works, because the high-power semiconductor laser is limited by the electro-optical efficiency, part of injected power of the high-power semiconductor laser is dissipated in the form of heat, and the quality of a light beam of the semiconductor laser is also deteriorated if the heat dissipation is insufficient.
SUMMERY OF THE UTILITY MODEL
The utility model aims at above-mentioned weak point provides a multi-electrode semiconductor laser, plans to solve the semiconductor laser chip of current multi-electrode and can't carry out disconnect-type electricity and pour into, the not enough scheduling problem of heat dispersion. In order to achieve the above object, the utility model provides a following technical scheme:
a multi-electrode semiconductor laser includes a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; the positive metallization layer 7 and the positive chip area 4 are electrically connected in a one-to-one correspondence. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 in the chip area, so that the heat dissipation efficiency of the negative electrode 5 in the chip area and the withstand current of the negative electrode metallization layer 6 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
Further, a plurality of chip region cathodes 5 of the chip regions 3 are attached to the cathode metallization layer 6. According to the structure, the chip area negative electrode 5 of the chip area 3 can be welded, adhered or sintered on the negative electrode metallization layer 6, and the negative electrode metallization layer 6 with a large area can accelerate heat dissipation.
Further, the positive electrode metallization layers 7 and the chip area positive electrodes 4 which correspond to each other one by one are connected through a plurality of electrode leads 8. According to the structure, the positive electrode metallization layer 7 is connected with the corresponding chip area positive electrode 4 through the plurality of electrode leads 8, the plurality of electrode leads 8 increase the connection reliability, and the withstand current is improved. The electrode leads 8 may be directly connected or indirectly connected.
Further, the heat sink 2 further comprises a substrate 9; the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is a chip area anode 4, and the bottom surface is a chip area cathode 5. According to the structure, the substrate 9 can be made of insulating ceramics, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated away through the substrate 9 with stronger heat dissipation capacity, so that the heat dissipation efficiency is improved. Because the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9, the size of the whole multi-electrode semiconductor laser in the height direction is small, the space occupation in the height direction is saved, and the width direction and the length direction are large, so that the heat dissipation is accelerated.
Further, a first insulating gap 10 is disposed between the plurality of anode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and breaks the adjacent positive electrode metallization layers 7 from each other, thereby preventing short circuits.
Further, a second insulating gap 11 is arranged between the cathode metallization layer 6 and the plurality of anode metallization layers 7. As can be seen from the above structure, the second insulating gap 11 insulates and breaks the insulation between the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7, thereby avoiding a short circuit.
Furthermore, solder is preset on the negative electrode metallization layer 6. According to the structure, the solder is preset on the negative electrode metallization layer 6, so that the chip area negative electrode 5 of the chip area 3 can be welded on the negative electrode metallization layer 6, and the heat dissipation of the negative electrode metallization layer 6 with a large area is accelerated.
Further, a metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area of at least one chip area 3; the metal sub-heat sink 12 is connected to the positive electrode metallization layer 7 corresponding to the chip area 3 by a plurality of electrode leads 8. By the structure, the positive electrode 4 of the chip area 3 is the heat-generating area, and the metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area 3 in the heat-generating area, so that the heat dissipation of the heat-generating area is accelerated by the metal sub-heat sink 12, and the uniform electric injection to the positive electrode area is ensured. The chip regions 3 with the metal sub-heat sinks 12 can have one group, two groups or more groups, and the arrangement is determined according to actual conditions.
Further, the metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area by pre-placing solder. According to the structure, the metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area through the preset solder, so that the positive electrode 4 of the chip area of the high-yield area is fully contacted with the metal sub-heat sink 12, and the heat dissipation and the uniform electric injection of the positive electrode 4 of the chip area are accelerated.
Further, the size of the negative electrode metallization layer 6 exceeds the size of the chip region negative electrodes 5 of the plurality of chip regions 3. According to the structure, the area of the negative pole metallization layer 6 is larger than that of the negative pole 5 in the chip area, and the heat dissipation efficiency of the negative pole 5 in the chip area is improved.
The utility model has the advantages that:
the utility model discloses a multi-electrode semiconductor laser, belonging to the technical field of laser, comprising a multi-electrode semiconductor laser chip and a heat sink; the multi-electrode semiconductor laser chip comprises a plurality of chip areas; the chip area comprises a positive electrode and a negative electrode; the heat sink comprises a negative pole metallization layer and a plurality of mutually insulated positive pole metallization layers; the plurality of positive pole metallization layers correspond to the positive poles of the chip areas of the plurality of chip areas one by one; the negative electrodes of the chip areas and the negative electrode metallization layer of the plurality of chip areas are electrically conducted; the positive pole metallization layer and the positive pole of the chip area are in one-to-one correspondence and are electrically conducted. The utility model discloses a multi-electrode semiconductor laser can satisfy and pour into the electric current of variation in size at different electrodes, can not take place the short circuit between the different electrode couples to realize multi-electrode semiconductor laser chip's function, heat dispersion is good, and is reliable and stable.
Drawings
Fig. 1 is a schematic top view of the present invention;
FIG. 2 is a schematic elevation view of the structure of FIG. 1;
in the drawings: the chip comprises a 1-multi-electrode semiconductor laser chip, a 2-heat sink, a 3-chip area, a 4-chip area anode, a 5-chip area cathode, a 6-cathode metallization layer, a 7-anode metallization layer, an 8-electrode lead, a 9-substrate, a 10-first insulation gap, a 11-second insulation gap and a 12-metal sub-heat sink.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments, but the present invention is not limited to the following embodiments.
The first embodiment is as follows:
see figures 1-2. A multi-electrode semiconductor laser includes a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; the positive metallization layer 7 and the positive chip area 4 are electrically connected in a one-to-one correspondence. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 in the chip area, so that the heat dissipation efficiency of the negative electrode 5 in the chip area and the withstand current of the negative electrode metallization layer 6 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
Example two:
see figures 1-2. A multi-electrode semiconductor laser includes a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; the positive metallization layer 7 and the positive chip area 4 are electrically connected in a one-to-one correspondence. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 in the chip area, so that the heat dissipation efficiency of the negative electrode 5 in the chip area and the withstand current of the negative electrode metallization layer 6 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
A plurality of chip region cathodes 5 of the chip regions 3 are attached to the cathode metallization layer 6. According to the structure, the chip area negative electrode 5 of the chip area 3 can be welded, adhered or sintered on the negative electrode metallization layer 6, and the negative electrode metallization layer 6 with a large area can accelerate heat dissipation.
The positive electrode metallization layer 7 and the chip area positive electrode 4 which are in one-to-one correspondence are connected through a plurality of electrode leads 8. According to the structure, the positive electrode metallization layer 7 is connected with the corresponding chip area positive electrode 4 through the plurality of electrode leads 8, the plurality of electrode leads 8 increase the connection reliability, and the withstand current is improved. The electrode leads 8 may be directly connected or indirectly connected.
The heat sink 2 further comprises a base plate 9; the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is a chip area anode 4, and the bottom surface is a chip area cathode 5. According to the structure, the substrate 9 can be made of insulating ceramics, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated away through the substrate 9 with stronger heat dissipation capacity, so that the heat dissipation efficiency is improved. Because the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9, the size of the whole multi-electrode semiconductor laser in the height direction is small, the space occupation in the height direction is saved, and the width direction and the length direction are large, so that the heat dissipation is accelerated.
Example three:
see figures 1-2. A multi-electrode semiconductor laser includes a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; the positive metallization layer 7 and the positive chip area 4 are electrically connected in a one-to-one correspondence. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 in the chip area, so that the heat dissipation efficiency of the negative electrode 5 in the chip area and the withstand current of the negative electrode metallization layer 6 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
A plurality of chip region cathodes 5 of the chip regions 3 are attached to the cathode metallization layer 6. According to the structure, the chip area negative electrode 5 of the chip area 3 can be welded, adhered or sintered on the negative electrode metallization layer 6, and the negative electrode metallization layer 6 with a large area can accelerate heat dissipation.
The positive electrode metallization layer 7 and the chip area positive electrode 4 which are in one-to-one correspondence are connected through a plurality of electrode leads 8. According to the structure, the positive electrode metallization layer 7 is connected with the corresponding chip area positive electrode 4 through the plurality of electrode leads 8, the plurality of electrode leads 8 increase the connection reliability, and the withstand current is improved. The electrode leads 8 may be directly connected or indirectly connected.
The heat sink 2 further comprises a base plate 9; the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is a chip area anode 4, and the bottom surface is a chip area cathode 5. According to the structure, the substrate 9 can be made of insulating ceramics, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated away through the substrate 9 with stronger heat dissipation capacity, so that the heat dissipation efficiency is improved. Because the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9, the size of the whole multi-electrode semiconductor laser in the height direction is small, the space occupation in the height direction is saved, and the width direction and the length direction are large, so that the heat dissipation is accelerated.
A first insulating gap 10 is provided between the plurality of anode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and breaks the adjacent positive electrode metallization layers 7 from each other, thereby preventing short circuits.
The negative electrode metallization layer 6 is pre-provided with solder. According to the structure, the solder is preset on the negative electrode metallization layer 6, so that the chip area negative electrode 5 of the chip area 3 can be welded on the negative electrode metallization layer 6, and the heat dissipation of the negative electrode metallization layer 6 with a large area is accelerated.
A metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area of at least one chip area 3; the metal sub-heat sink 12 is connected to the positive electrode metallization layer 7 corresponding to the chip area 3 by a plurality of electrode leads 8. By the structure, the positive electrode 4 of the chip area 3 is the heat-generating area, and the metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area 3 in the heat-generating area, so that the heat dissipation of the heat-generating area is accelerated by the metal sub-heat sink 12, and the uniform electric injection to the positive electrode area is ensured. The chip regions 3 with the metal sub-heat sinks 12 can have one group, two groups or more groups, and the arrangement is determined according to actual conditions.
The metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area by pre-arranged solder. According to the structure, the metal sub-heat sink 12 is attached to the positive electrode 4 of the chip area through the preset solder, so that the positive electrode 4 of the chip area of the high-yield area is fully contacted with the metal sub-heat sink 12, and the heat dissipation and the uniform electric injection of the positive electrode 4 of the chip area are accelerated.
The size of the negative metallization layer 6 exceeds the size of the chip area negative electrodes 5 of the plurality of chip areas 3. According to the structure, the area of the negative pole metallization layer 6 is larger than that of the negative pole 5 in the chip area, and the heat dissipation efficiency of the negative pole 5 in the chip area is improved.
The above only is the preferred embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structures or equivalent flow changes made by the contents of the specification and the drawings, or directly or indirectly applied to other related technical fields, are included in the same way in the protection scope of the present invention.
Claims (10)
1. A multi-electrode semiconductor laser characterized by: the multi-electrode semiconductor laser chip comprises a multi-electrode semiconductor laser chip (1) and a heat sink (2); the multi-electrode semiconductor laser chip (1) comprises a plurality of chip areas (3); the chip area (3) comprises a chip area anode (4) and a chip area cathode (5); the heat sink (2) comprises a negative pole metallization layer (6) and a plurality of mutually insulated positive pole metallization layers (7); the plurality of positive electrode metallization layers (7) correspond to the positive electrodes (4) of the chip areas (3) one by one; the chip area cathodes (5) of the plurality of chip areas (3) are electrically conducted with the cathode metallization layer (6); the positive electrode metallization layers (7) and the chip area positive electrodes (4) which are in one-to-one correspondence are electrically conducted.
2. A multi-electrode semiconductor laser as claimed in claim 1, wherein: chip area cathodes (5) of the plurality of chip areas (3) are attached to the cathode metallization layer (6).
3. A multi-electrode semiconductor laser according to claim 2, wherein: the anode metallization layers (7) which correspond to each other one by one are connected with the chip area anodes (4) through a plurality of electrode leads (8).
4. A multi-electrode semiconductor laser according to claim 3, wherein: the heat sink (2) further comprises a base plate (9); the negative pole metallization layer (6) and the plurality of positive pole metallization layers (7) are arranged on the top surface of the substrate (9); the top surface of the chip area (3) is a chip area anode (4), and the bottom surface is a chip area cathode (5).
5. A multi-electrode semiconductor laser as claimed in claim 1, wherein: first insulation gaps (10) are arranged among the plurality of anode metallization layers (7).
6. A multi-electrode semiconductor laser as claimed in claim 1, wherein: and second insulation gaps (11) are arranged between the negative electrode metallization layer (6) and the plurality of positive electrode metallization layers (7).
7. A multi-electrode semiconductor laser according to claim 2, wherein: and the negative pole metallization layer (6) is provided with solder in advance.
8. A multi-electrode semiconductor laser according to claim 4, wherein: a metal sub-heat sink (12) is attached to the positive electrode (4) of the chip area of at least one chip area (3); the metal sub-heat sink (12) is connected with the anode metallization layer (7) corresponding to the chip area (3) through a plurality of electrode leads (8).
9. A multi-electrode semiconductor laser according to claim 8, wherein: the metal sub-heat sink (12) is attached to the positive electrode (4) of the chip area through preset solder.
10. A multi-electrode semiconductor laser according to claim 2, wherein: the size of the negative pole metallization layer (6) exceeds the size of the chip area negative poles (5) of the plurality of chip areas (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120235506.6U CN214227348U (en) | 2021-01-28 | 2021-01-28 | Multi-electrode semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120235506.6U CN214227348U (en) | 2021-01-28 | 2021-01-28 | Multi-electrode semiconductor laser |
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| CN214227348U true CN214227348U (en) | 2021-09-17 |
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