CN112821192A - Multi-electrode semiconductor laser packaging structure - Google Patents
Multi-electrode semiconductor laser packaging structure Download PDFInfo
- Publication number
- CN112821192A CN112821192A CN202110115525.XA CN202110115525A CN112821192A CN 112821192 A CN112821192 A CN 112821192A CN 202110115525 A CN202110115525 A CN 202110115525A CN 112821192 A CN112821192 A CN 112821192A
- Authority
- CN
- China
- Prior art keywords
- chip
- electrode
- semiconductor laser
- metallization layer
- chip area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a multi-electrode semiconductor laser packaging structure, which belongs to the technical field of laser and comprises a multi-electrode semiconductor laser chip and a heat sink; the multi-electrode semiconductor laser chip comprises a plurality of chip areas; the chip area comprises a positive electrode and a negative electrode; the heat sink comprises a negative pole metallization layer and a plurality of mutually insulated positive pole metallization layers; the plurality of positive electrode metallization layers correspond to the positive electrodes of the chip areas of the plurality of chip areas one by one, and the positive electrodes of the chip areas are attached to the corresponding positive electrode metallization layers; the negative electrodes of the chip regions and the negative electrode metallization layer of the plurality of chip regions are electrically connected. The multi-electrode semiconductor laser packaging structure can fill different currents into different electrodes, and short circuit does not occur between different electrode pairs, so that the multi-electrode semiconductor laser chip is realized, and the multi-electrode semiconductor laser packaging structure is good in heat dissipation performance, stable and reliable.
Description
Technical Field
The invention belongs to the technical field of laser, and particularly relates to a multi-electrode semiconductor laser packaging structure.
Background
The semiconductor laser has the advantages of high electro-optical efficiency, long service life, high reliability and the like, and has wide application prospect in the fields of material processing, military and national defense, communication, medical treatment, cosmetology and the like. A semiconductor laser chip is the core of a semiconductor laser. The conventional semiconductor laser chip generally has only one pair of electrodes, and the function of the conventional semiconductor laser chip can be realized by welding the chip on a heat sink substrate by adopting an inverted packaging structure. Compared with the traditional semiconductor laser chip, the multi-electrode semiconductor laser chip has the characteristics of good beam quality and high brightness, and has excellent application prospect. However, for the multi-electrode semiconductor laser chip, because there are more than two pairs of electrodes, i.e. the common negative electrode and the insulation between the positive electrodes, if the conventional semiconductor laser chip packaging structure is adopted, a short circuit occurs between different electrode pairs of the multi-electrode semiconductor laser chip, and separate electrical injection cannot be performed, i.e. different currents with different magnitudes are injected into different electrodes, and finally the function of the multi-electrode semiconductor laser chip cannot be realized. When the high-power semiconductor laser works, because the high-power semiconductor laser is limited by the electro-optical efficiency, part of injected power of the high-power semiconductor laser is dissipated in the form of heat, and the quality of a light beam of the semiconductor laser is also deteriorated if the heat dissipation is insufficient.
Disclosure of Invention
The invention aims to provide a multi-electrode semiconductor laser packaging structure aiming at the defects, and aims to solve the problems that the existing multi-electrode semiconductor laser chip cannot carry out separated electrical injection, is insufficient in heat dissipation performance and the like. In order to achieve the purpose, the invention provides the following technical scheme:
a multi-electrode semiconductor laser packaging structure comprises a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, and the chip area anodes 4 are attached to the corresponding anode metallization layers 7; the negative electrodes 5 of the chip areas 3 of the plurality of chip areas are electrically connected to the negative metallization layer 6. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely, each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded, adhered or sintered on the anode metallization layers 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 of the chip area, the heat dissipation efficiency of the negative electrode 5 of the chip area is improved, the area of the positive electrode metallization layer 7 is larger than that of the positive electrode 4 of the chip area, and the heat dissipation efficiency of the positive electrode 4 of the chip area and the tolerance current of the positive electrode metallization layer 7 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
Further, the negative electrodes 5 of the chip regions 3 and the negative electrode metallization layer 6 are connected by a plurality of electrode leads 8. According to the structure, the negative electrode metallization layer 6 is connected with the corresponding chip area negative electrode 5 through the plurality of electrode leads 8, the plurality of electrode leads 8 improve the connection reliability, and the withstand current is improved.
Further, the heat sink 2 further comprises a substrate 9; the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is a chip area cathode 5, and the bottom surface is a chip area anode 4. According to the structure, the substrate 9 can be made of insulating ceramics, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated away through the substrate 9 with stronger heat dissipation capacity, so that the heat dissipation efficiency is improved. Because the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9, the size of the whole multi-electrode semiconductor laser in the height direction is small, the space occupation in the height direction is saved, and the width direction and the length direction are large, so that the heat dissipation is accelerated.
Further, a first insulating gap 10 is disposed between the plurality of anode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and breaks the adjacent positive electrode metallization layers 7 from each other, thereby preventing short circuits. The multi-electrode semiconductor laser chip 1 can be provided with a plurality of electric insulation spacing grooves to divide the chip into a plurality of chip areas 3, the electric insulation spacing grooves correspond to the first insulation gaps 10, so that a plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded or bonded or sintered on the anode metallization layers 7; one of them first insulating clearance 10 can be gone up and to set up insulating sand grip, and insulating sand grip can cooperate the electrically insulated spacer groove for multielectrode semiconductor laser chip 1 can fix a position fast with negative pole metallization layer 6, positive pole metallization layer 7.
Further, a second insulating gap 11 is arranged between the cathode metallization layer 6 and the plurality of anode metallization layers 7. As can be seen from the above structure, the second insulating gap 11 insulates and breaks the insulation between the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7, thereby avoiding a short circuit.
Furthermore, solder is pre-arranged on each of the plurality of positive electrode metallization layers 7. According to the structure, the solder is preset on the positive electrode metallization layer 7, so that the chip area positive electrode 4 of the chip area 3 can be welded on the positive electrode metallization layer 7, and the heat dissipation is accelerated by the positive electrode metallization layer 7 with a larger area.
Further, the size of the positive electrode metallization layer 7 exceeds the size of the positive electrode 4 of the corresponding chip region 3. As can be seen from the above structure, the area of the positive electrode metallization layer 7 is larger than the size of the positive electrode 4 of the corresponding chip region 3, so that the heat dissipation efficiency of the positive electrode 4 of the chip region and the withstand current of the positive electrode metallization layer 7 are improved.
Furthermore, a plurality of through holes 13 which are parallel to each other are arranged on the substrate 9; and a piezoelectric fan is arranged on one port side of the through hole 13. According to the structure, the piezoelectric fan blows air to the through hole 13, the heat dissipation area of the substrate 9 with the through hole 13 is large, the heat dissipation capacity is strong, and the multi-electrode semiconductor laser chip 1 can dissipate heat quickly.
Further, grid plates 14 are fixed on two sides of the substrate 9; the grid plate 14 protrudes beyond the top surface of the multi-electrode semiconductor laser chip 1. According to the structure, the grid plates 14 are fixed on the two sides of the substrate 9, so that the heat dissipation area of the substrate 9 is increased, the heat dissipation capacity is improved, the space size is not increased, and the pins of the negative electrode metallization layer 6 or the positive electrode metallization layer 7 can be led out through the gaps on the grid plates 14. The grid plate 14 extends beyond the top surface of the multi-electrode semiconductor laser chip 1, and plays a role in protecting the multi-electrode semiconductor laser chip 1.
The invention has the beneficial effects that:
the invention discloses a multi-electrode semiconductor laser packaging structure, which belongs to the technical field of laser and comprises a multi-electrode semiconductor laser chip and a heat sink; the multi-electrode semiconductor laser chip comprises a plurality of chip areas; the chip area comprises a positive electrode and a negative electrode; the heat sink comprises a negative pole metallization layer and a plurality of mutually insulated positive pole metallization layers; the plurality of positive electrode metallization layers correspond to the positive electrodes of the chip areas of the plurality of chip areas one by one, and the positive electrodes of the chip areas are attached to the corresponding positive electrode metallization layers; the negative electrodes of the chip regions and the negative electrode metallization layer of the plurality of chip regions are electrically connected. The multi-electrode semiconductor laser packaging structure can fill different currents into different electrodes, and short circuit does not occur between different electrode pairs, so that the multi-electrode semiconductor laser chip is realized, and the multi-electrode semiconductor laser packaging structure is good in heat dissipation performance, stable and reliable.
Drawings
FIG. 1 is a schematic top view of the first and second embodiments;
FIG. 2 is a schematic elevation view of the structure of FIG. 1;
FIG. 3 is a schematic front view of the third embodiment;
FIG. 4 is a schematic three-dimensional structure of the first and second embodiments;
in the drawings: 1-multi-electrode semiconductor laser chip, 2-heat sink, 3-chip area, 4-chip area anode, 5-chip area cathode, 6-cathode metallization layer, 7-anode metallization layer, 8-electrode lead, 9-substrate, 10-first insulation gap, 11-second insulation gap, 13-through hole and 14-grid plate.
Detailed Description
The present invention will be described in further detail below with reference to the drawings and the embodiments, but the present invention is not limited to the following examples.
The first embodiment is as follows:
see figures 1-2 and 4. A multi-electrode semiconductor laser packaging structure comprises a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, and the chip area anodes 4 are attached to the corresponding anode metallization layers 7; the negative electrodes 5 of the chip areas 3 of the plurality of chip areas are electrically connected to the negative metallization layer 6. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely, each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded, adhered or sintered on the anode metallization layers 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 of the chip area, the heat dissipation efficiency of the negative electrode 5 of the chip area is improved, the area of the positive electrode metallization layer 7 is larger than that of the positive electrode 4 of the chip area, and the heat dissipation efficiency of the positive electrode 4 of the chip area and the tolerance current of the positive electrode metallization layer 7 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
Example two:
see figures 1-2 and 4. A multi-electrode semiconductor laser packaging structure comprises a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, and the chip area anodes 4 are attached to the corresponding anode metallization layers 7; the negative electrodes 5 of the chip areas 3 of the plurality of chip areas are electrically connected to the negative metallization layer 6. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely, each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded, adhered or sintered on the anode metallization layers 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 of the chip area, the heat dissipation efficiency of the negative electrode 5 of the chip area is improved, the area of the positive electrode metallization layer 7 is larger than that of the positive electrode 4 of the chip area, and the heat dissipation efficiency of the positive electrode 4 of the chip area and the tolerance current of the positive electrode metallization layer 7 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
The negative electrodes 5 of the chip regions 3 and the negative metallization layer 6 are connected by a plurality of electrode leads 8. According to the structure, the negative electrode metallization layer 6 is connected with the corresponding chip area negative electrode 5 through the plurality of electrode leads 8, the plurality of electrode leads 8 improve the connection reliability, and the withstand current is improved.
The heat sink 2 further comprises a base plate 9; the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is a chip area cathode 5, and the bottom surface is a chip area anode 4. According to the structure, the substrate 9 can be made of insulating ceramics, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated away through the substrate 9 with stronger heat dissipation capacity, so that the heat dissipation efficiency is improved. Because the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9, the size of the whole multi-electrode semiconductor laser in the height direction is small, the space occupation in the height direction is saved, and the width direction and the length direction are large, so that the heat dissipation is accelerated.
A first insulating gap 10 is provided between the plurality of anode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and breaks the adjacent positive electrode metallization layers 7 from each other, thereby preventing short circuits. The multi-electrode semiconductor laser chip 1 can be provided with a plurality of electric insulation spacing grooves to divide the chip into a plurality of chip areas 3, the electric insulation spacing grooves correspond to the first insulation gaps 10, so that a plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded or bonded or sintered on the anode metallization layers 7; one of them first insulating clearance 10 can be gone up and to set up insulating sand grip, and insulating sand grip can cooperate the electrically insulated spacer groove for multielectrode semiconductor laser chip 1 can fix a position fast with negative pole metallization layer 6, positive pole metallization layer 7.
Solder is pre-arranged on the positive electrode metallization layers 7. According to the structure, the solder is preset on the positive electrode metallization layer 7, so that the chip area positive electrode 4 of the chip area 3 can be welded on the positive electrode metallization layer 7, and the heat dissipation is accelerated by the positive electrode metallization layer 7 with a larger area.
The size of the positive metallization layer 7 exceeds the size of the positive electrode 4 of the corresponding chip area 3. As can be seen from the above structure, the area of the positive electrode metallization layer 7 is larger than the size of the positive electrode 4 of the corresponding chip region 3, so that the heat dissipation efficiency of the positive electrode 4 of the chip region and the withstand current of the positive electrode metallization layer 7 are improved.
Example three:
see figure 3. A multi-electrode semiconductor laser packaging structure comprises a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip areas 3; the chip area 3 comprises a chip area anode 4 and a chip area cathode 5; the heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, and the chip area anodes 4 are attached to the corresponding anode metallization layers 7; the negative electrodes 5 of the chip areas 3 of the plurality of chip areas are electrically connected to the negative metallization layer 6. As can be seen from the above structure, the multiple-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, the multiple-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacer grooves to divide itself into the plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are common, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip region 3 may perform a different function and require a different amount of current injection. The heat sink 2 comprises a cathode metallization layer 6 and a plurality of mutually insulated anode metallization layers 7; the plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the plurality of chip areas 3 one by one, namely, each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded, adhered or sintered on the anode metallization layers 7; the anode metallization layers 7 are insulated from each other; the negative electrodes 5 and the negative electrode metallization layers 6 of the chip areas 3 are electrically connected; therefore, currents with different sizes can be injected into the anodes 4 in different chip areas, short circuit cannot occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separated electrical injection can be realized to realize functions of the multi-electrode semiconductor laser chip. The area of the negative electrode metallization layer 6 is larger than that of the negative electrode 5 of the chip area, the heat dissipation efficiency of the negative electrode 5 of the chip area is improved, the area of the positive electrode metallization layer 7 is larger than that of the positive electrode 4 of the chip area, and the heat dissipation efficiency of the positive electrode 4 of the chip area and the tolerance current of the positive electrode metallization layer 7 are improved. The good heat dissipation enables the beam quality of the multi-electrode semiconductor laser to be better.
The negative electrodes 5 of the chip regions 3 and the negative metallization layer 6 are connected by a plurality of electrode leads 8. According to the structure, the negative electrode metallization layer 6 is connected with the corresponding chip area negative electrode 5 through the plurality of electrode leads 8, the plurality of electrode leads 8 improve the connection reliability, and the withstand current is improved.
The heat sink 2 further comprises a base plate 9; the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is a chip area cathode 5, and the bottom surface is a chip area anode 4. According to the structure, the substrate 9 can be made of insulating ceramics, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated away through the substrate 9 with stronger heat dissipation capacity, so that the heat dissipation efficiency is improved. Because the cathode metallization layer 6 and the plurality of anode metallization layers 7 are arranged on the top surface of the substrate 9, the size of the whole multi-electrode semiconductor laser in the height direction is small, the space occupation in the height direction is saved, and the width direction and the length direction are large, so that the heat dissipation is accelerated.
A first insulating gap 10 is provided between the plurality of anode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and breaks the adjacent positive electrode metallization layers 7 from each other, thereby preventing short circuits. The multi-electrode semiconductor laser chip 1 can be provided with a plurality of electric insulation spacing grooves to divide the chip into a plurality of chip areas 3, the electric insulation spacing grooves correspond to the first insulation gaps 10, so that a plurality of anode metallization layers 7 correspond to the chip area anodes 4 of the chip areas 3 one by one, namely each chip area anode 4 is electrically communicated with one anode metallization layer 7, and the chip area anodes 4 can be welded or bonded or sintered on the anode metallization layers 7; one of them first insulating clearance 10 can be gone up and to set up insulating sand grip, and insulating sand grip can cooperate the electrically insulated spacer groove for multielectrode semiconductor laser chip 1 can fix a position fast with negative pole metallization layer 6, positive pole metallization layer 7.
Solder is pre-arranged on the positive electrode metallization layers 7. According to the structure, the solder is preset on the positive electrode metallization layer 7, so that the chip area positive electrode 4 of the chip area 3 can be welded on the positive electrode metallization layer 7, and the heat dissipation is accelerated by the positive electrode metallization layer 7 with a larger area.
The size of the positive metallization layer 7 exceeds the size of the positive electrode 4 of the corresponding chip area 3. As can be seen from the above structure, the area of the positive electrode metallization layer 7 is larger than the size of the positive electrode 4 of the corresponding chip region 3, so that the heat dissipation efficiency of the positive electrode 4 of the chip region and the withstand current of the positive electrode metallization layer 7 are improved.
The substrate 9 is provided with a plurality of through holes 13 which are parallel to each other; and a piezoelectric fan is arranged on one port side of the through hole 13. According to the structure, the piezoelectric fan blows air to the through hole 13, the heat dissipation area of the substrate 9 with the through hole 13 is large, the heat dissipation capacity is strong, and the multi-electrode semiconductor laser chip 1 can dissipate heat quickly.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A multi-electrode semiconductor laser packaging structure is characterized in that: the multi-electrode semiconductor laser chip comprises a multi-electrode semiconductor laser chip (1) and a heat sink (2); the multi-electrode semiconductor laser chip (1) comprises a plurality of chip areas (3); the chip area (3) comprises a chip area anode (4) and a chip area cathode (5); the heat sink (2) comprises a negative pole metallization layer (6) and a plurality of mutually insulated positive pole metallization layers (7); the plurality of positive electrode metallization layers (7) correspond to the chip area positive electrodes (4) of the plurality of chip areas (3) one by one, and the chip area positive electrodes (4) are attached to the corresponding positive electrode metallization layers (7); the chip region cathodes (5) of the plurality of chip regions (3) and the cathode metallization layer (6) are electrically conductive.
2. A multi-electrode semiconductor laser package structure according to claim 1, wherein: the chip area cathodes (5) of the plurality of chip areas (3) are connected with the cathode metallization layer (6) through a plurality of electrode leads (8).
3. A multi-electrode semiconductor laser package structure according to claim 2, wherein: the heat sink (2) further comprises a base plate (9); the negative pole metallization layer (6) and the plurality of positive pole metallization layers (7) are arranged on the top surface of the substrate (9); the top surface of the chip area (3) is a chip area cathode (5), and the bottom surface is a chip area anode (4).
4. A multi-electrode semiconductor laser package structure according to claim 1, wherein: first insulation gaps (10) are arranged among the plurality of anode metallization layers (7).
5. A multi-electrode semiconductor laser package structure according to claim 1, wherein: and second insulation gaps (11) are arranged between the negative electrode metallization layer (6) and the plurality of positive electrode metallization layers (7).
6. A multi-electrode semiconductor laser package structure according to claim 1, wherein: the solder is arranged on the positive pole metallization layers (7) in advance.
7. A multi-electrode semiconductor laser package structure according to claim 1, wherein: the size of the positive pole metallization layer (7) exceeds the size of the positive pole (4) of the chip area of the corresponding chip area (3).
8. A multi-electrode semiconductor laser package structure according to claim 3, wherein: the base plate (9) is provided with a plurality of through holes (13) which are parallel to each other; and a piezoelectric fan is arranged on one port side of the through hole (13).
9. A multi-electrode semiconductor laser package structure according to claim 8, wherein: grid plates (14) are fixed on both sides of the substrate (9); the grid plate (14) extends beyond the top surface of the multi-electrode semiconductor laser chip (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110115525.XA CN112821192A (en) | 2021-01-28 | 2021-01-28 | Multi-electrode semiconductor laser packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110115525.XA CN112821192A (en) | 2021-01-28 | 2021-01-28 | Multi-electrode semiconductor laser packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112821192A true CN112821192A (en) | 2021-05-18 |
Family
ID=75859783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110115525.XA Pending CN112821192A (en) | 2021-01-28 | 2021-01-28 | Multi-electrode semiconductor laser packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112821192A (en) |
-
2021
- 2021-01-28 CN CN202110115525.XA patent/CN112821192A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103515365B (en) | A kind of high-power compression joint type IGBT device | |
| CN107369657B (en) | Double-sided heat dissipation power module with multiple areas arranged in parallel | |
| US20220223435A1 (en) | Heat dissipating substrate for semiconductor and preparation method thereof | |
| JP2020013987A (en) | Power module structure | |
| KR102125099B1 (en) | Presspin, power semiconducter module and semiconducter module assembly with multiple power semiconducter modules | |
| JP2020047750A (en) | Semiconductor device | |
| CN116130477A (en) | Intelligent power module and electronic equipment with same | |
| CN214227349U (en) | Multi-electrode semiconductor laser packaging structure | |
| CN112821192A (en) | Multi-electrode semiconductor laser packaging structure | |
| CN214227348U (en) | Multi-electrode semiconductor laser | |
| JP2011254106A (en) | Semiconductor device module and heat conduction chip for use therein | |
| CN110911395A (en) | Double-sided heat dissipation IGBT module | |
| CN102679295A (en) | Light source module for improving heat dissipation efficiency and assembling method thereof | |
| CN215118901U (en) | Intelligent power module | |
| CN110752278A (en) | Light emitting diode and manufacturing method thereof | |
| CN112687676A (en) | Crimping type IGBT sub-module and crimping type IGBT module | |
| CN218827090U (en) | Double-sided heat dissipation power module and power equipment | |
| KR102638854B1 (en) | Board for LED lighting apparatus and LED lighting apparatus having the same | |
| CN105914283A (en) | Heat dissipation substrate, power module, and method for preparing heat dissipation substrate | |
| CN216648346U (en) | Flip chip packaging support and packaging body | |
| CN218415056U (en) | Connection structure and power module | |
| CN114758816B (en) | DC bus capacitor and motor controller | |
| JP2001007282A (en) | Power semiconductor element | |
| CN220796714U (en) | Low thermal resistance power module | |
| CN217545226U (en) | Semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |