CN217545226U

CN217545226U - Semiconductor laser

Info

Publication number: CN217545226U
Application number: CN202221557397.0U
Authority: CN
Inventors: 陈晓华; 马威; 郎超; 耿琳; 骆超越; 于振坤
Original assignee: BWT Beijing Ltd
Current assignee: BWT Beijing Ltd
Priority date: 2022-06-21
Filing date: 2022-06-21
Publication date: 2022-10-04
Anticipated expiration: 2032-06-21

Abstract

The utility model discloses a semiconductor laser, which comprises a heat sink and at least two light-emitting units; the upper end surface of the heat sink is provided with a first electrode and at least two second electrodes, the second electrodes are arranged in parallel, and each light-emitting unit is electrically connected with the first electrode and the corresponding second electrode respectively; the first electrode is a positive electrode, and the second electrode is a negative electrode; alternatively, the first electrode is a negative electrode and the second electrode is a positive electrode. Each luminescence unit in this semiconductor laser adds power up alone, after one of them luminescence unit damages, can switch other luminescence units and continue work, can normally work for semiconductor laser and provide redundancy, and then prolonged semiconductor laser's life to this semiconductor laser still has advantages such as simple structure, small in size.

Description

Semiconductor laser

Technical Field

The utility model belongs to the technical field of the laser instrument, in particular to semiconductor laser.

Background

At present, the laser radar industry develops rapidly, and the laser radar has wide application in the fields of automatic driving, rail transit, distance measurement and the like. The laser radar has the advantages of high resolution, good concealment, strong active interference resistance, good low-altitude detection performance, small volume, light weight and the like, and has wide development prospect in the future.

However, due to the environment of the laser radar application, the environmental adaptability of the laser is high, and the laser is required to be capable of enduring severe temperature difference transformation, which makes the service life of the laser face severe tests. In the laser radar use, in case laser chip appears damaging, just need change whole laser instrument, and then increased laser radar's use cost.

SUMMERY OF THE UTILITY MODEL

To address the above problems, the present invention discloses a semiconductor laser to overcome the above problems or at least partially solve the above problems.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a semiconductor laser, which comprises a heat sink and at least two light-emitting units;

a first electrode and at least two second electrodes are arranged on the upper end face of the heat sink, the second electrodes are arranged in parallel, and the light-emitting units are electrically connected with the first electrodes and the corresponding second electrodes respectively;

the first electrode is a positive electrode, and the second electrode is a negative electrode; or, the first electrode is a negative electrode, and the second electrode is a positive electrode.

Furthermore, the light emitting units are arranged in parallel, and the light emitting directions are the same.

Furthermore, an insulating groove is arranged between the first electrode and each second electrode.

Further, each of the light emitting cells is disposed on the first electrode and is connected to the corresponding second electrode through an electrical conductor.

Further, each of the light emitting units is fixed to the first electrode by welding.

Further, the electric conductor is a gold wire.

Further, the first electrode and each of the second electrodes are copper plates.

Further, the first electrode and each of the second electrodes are coated with a gold layer.

Further, the heat sink is made of ceramic materials.

Furthermore, a copper plate is arranged on the lower end face of the heat sink.

The utility model has the advantages and the beneficial effects that:

the utility model discloses an among the semiconductor laser, through setting up two at least luminescence units to each luminescence unit adds power alone, damages the back when one of them luminescence unit, can switch other luminescence units and continue work, can normally work for semiconductor laser and provide redundancy, and then prolonged semiconductor laser's life, and this semiconductor laser still has advantages such as simple structure, small in size.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

fig. 1 is a perspective view of a semiconductor laser according to an embodiment of the present invention;

fig. 2 is a top view of a semiconductor laser in an embodiment of the present invention;

fig. 3 is a front view of a semiconductor laser in an embodiment of the present invention.

In the figure: 1. a heat sink; 2. a light emitting unit; 3. a first electrode; 4. a second electrode; 5. an insulating groove; 6. an electrical conductor; 7. gold-tin solder; 8. a copper plate.

Detailed Description

In order to make the purpose, technical solution and advantages of the present invention clearer, the following will combine the embodiments of the present invention and the corresponding drawings to perform clear and complete description of the technical solution of the present invention. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.

The technical solutions provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

An embodiment of the utility model provides a semiconductor laser, as shown in fig. 1-fig. 2, this semiconductor laser includes heat sink 1 and two luminescence unit 2, and two luminescence unit 2 all set up the up end at heat sink 1. The light emitting unit 2 is a semiconductor chip or a plurality of semiconductor chips connected in series or in parallel.

Furthermore, the upper end face of the heat sink 1 is provided with a first electrode 3 and two second electrodes 4, the two second electrodes 4 are arranged in parallel, and each light-emitting unit 2 is electrically connected with the first electrode 3 and the corresponding second electrode 4, so that not only can the two light-emitting units 2 be powered independently, but also the semiconductor laser has a more compact and smaller structure. Specifically, in the embodiment, when the semiconductor laser operates, one of the light emitting units 2 operates, and when the operating light emitting unit is damaged, the other light emitting unit may be switched to operate, so that the semiconductor laser can still operate. In addition, in the present embodiment, the first electrode is a positive electrode, and the second electrode is a negative electrode.

Of course, in other embodiments, the semiconductor laser may include a plurality of light emitting units, and the upper end face of the heat sink is provided with a plurality of negative electrodes, wherein the number of the negative electrodes is the same as the number of the light emitting units, and the negative electrodes are arranged in parallel. Or, the first electrode is a negative electrode and the second electrode is a positive electrode.

In the semiconductor laser of this embodiment, through setting up two at least luminescence units to each luminescence unit adds power alone, damages the back when one of them luminescence unit, can switch other luminescence units and continue work, can normally work for semiconductor laser and provide redundancy, and then prolonged semiconductor laser's life, and this semiconductor laser still has advantages such as simple structure, small in size.

In this embodiment, the two light emitting units are arranged in parallel, and the light emitting directions are the same, so that in the semiconductor laser, the two light emitting units can share one fast axis collimating mirror and/or one anti-reflection mirror, and further the number of optical elements used in the semiconductor laser can be reduced, so that the structure is simpler.

In the present embodiment, the first electrode and each second electrode are copper plates, as shown in fig. 1 to 3, the first electrode 3 is disposed in the middle of the heat sink 1, two second electrodes 4 are disposed on two sides of the first electrode 3, and each light emitting unit 2 is fixed on the first electrode 3 by welding and is electrically connected to the corresponding second electrode 4 through an electrical conductor 6. Through the structural design, the semiconductor laser has a more compact structure and a smaller volume; in addition, the copper plate is used as an electrode, so that the light-emitting unit 2 can conveniently dissipate heat, and the semiconductor laser has better heat dissipation performance. Of course, in other embodiments, the first electrode and each second electrode may be made of other conductive materials.

Also, the electrical conductors 6 in this embodiment are gold wires, and the number of gold wires is plural, so that the power requirement of the light emitting unit 2 can be satisfied.

Further, an insulating groove 5 is arranged between the first electrode 3 and each second electrode 4, so that electrical insulation between the positive electrode and the negative electrode is guaranteed.

In addition, gold layers are coated on the first electrodes and the respective second electrodes so as to facilitate bonding of gold wires to the first electrodes and the second electrodes, and, as shown in fig. 1 and 2, the light emitting unit 2 is soldered on the first electrodes 3 by gold-tin solder 7 in particular.

In this embodiment, the heat sink is made of ceramic material, so that the heat sink can be matched with the thermal expansion coefficient of the light-emitting unit, the light-emitting unit can be firmly fixed on the heat sink, uniform heat dissipation can be realized, and the occurrence of local overheating can be prevented.

In addition, as shown in fig. 3, the lower end face of the heat sink 1 is provided with a copper plate 8, so that the heat sink is conveniently welded and fixed in the packaging structure of the laser, and the heat dissipation capability of the semiconductor laser can be improved.

In view of the above, it is only the specific embodiments of the present invention that other modifications and variations can be made by those skilled in the art based on the above-described embodiments in light of the above teachings. It should be understood by those skilled in the art that the foregoing detailed description is for the purpose of better explaining the present invention, and the scope of the present invention should be determined by the scope of the claims.

Claims

1. A semiconductor laser, characterized in that the semiconductor laser comprises a heat sink and at least two light emitting units;

the upper end surface of the heat sink is provided with a first electrode and at least two second electrodes, the second electrodes are arranged in parallel, and the light-emitting units are respectively electrically connected with the first electrode and the corresponding second electrode;

2. The semiconductor laser as claimed in claim 1, wherein the light emitting units are arranged in parallel and emit light in the same direction.

3. A semiconductor laser as claimed in claim 1 wherein an insulating trench is provided between the first electrode and each of the second electrodes.

4. The semiconductor laser according to claim 1, wherein each of the light emitting cells is provided on the first electrode and is connected to the corresponding second electrode through an electric conductor.

5. The semiconductor laser according to claim 4, wherein each of the light emitting cells is fixed to the first electrode by soldering.

6. A semiconductor laser as claimed in claim 5 wherein the electrical conductor is gold wire.

7. The semiconductor laser according to any of claims 1-6, wherein the first electrode and each of the second electrodes are copper plates.

8. The semiconductor laser of claim 7, wherein the first electrode and each of the second electrodes are coated with a gold layer.

9. The semiconductor laser of claim 7, wherein the heat sink is made of ceramic.

10. A semiconductor laser as claimed in any one of claims 1-6, characterized in that the lower end face of the heat sink is provided with a copper plate.