CN113113516B - Semiconductor light-emitting device and preparation method thereof - Google Patents
Semiconductor light-emitting device and preparation method thereof Download PDFInfo
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- CN113113516B CN113113516B CN202110299582.8A CN202110299582A CN113113516B CN 113113516 B CN113113516 B CN 113113516B CN 202110299582 A CN202110299582 A CN 202110299582A CN 113113516 B CN113113516 B CN 113113516B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 238000002360 preparation method Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 239000011810 insulating material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device includes: a substrate having opposing front and back sides; the stacked epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially formed on the front surface of the substrate, and the semiconductor light-emitting device emits light from one side surface of the stacked epitaxial layer; a reflective layer formed on a side surface opposite to a light-emitting side of the semiconductor light-emitting device; the first electrode structure comprises a first ohmic contact layer positioned on the back surface of the substrate and a connecting metal layer positioned on the first ohmic contact layer and on one side far away from the substrate; the first electrode structure further extends to the side of the stacked epitaxial layers, and the connection metal layer further extends to cover the reflective layer. The connecting metal layer does not influence the light-emitting effect of the light-emitting device, and can simultaneously conduct heat generated by the epitaxial layer, the anti-reflection layer and the reflection layer out in time, so that the optical catastrophe damage resistance and the thermal overturn resistance of the anti-reflection layer and the reflection layer are improved.
Description
The application is a divisional application of an invention patent with the application number of 201910577674.0 and the invention name of 'a semiconductor light-emitting device and a preparation method thereof', which is filed by the applicant 'san ampere photoelectric technology limited company in Xiamen city' on 2019, 06 and 28.
Technical Field
The invention relates to the technical field of semiconductor lighting, in particular to a semiconductor light-emitting device and a preparation method thereof.
Background
Semiconductor light emitting devices, such as light emitting diodes, laser diodes, etc., are receiving increasing attention for research and market applications due to their superior light emitting characteristics. For example, among them, gaN-based light emitting diodes and laser diodes have been widely researched and commercially used, particularly in laser displays and laser projection. At present, the main bottleneck of GaN-based light emitting diodes and laser diodes is high-power GaN blue and green laser diodes, and the structure of the laser diodes is mainly an edge-emitting ridge waveguide structure.
For a laser diode adopting an edge-emitting ridge waveguide structure, in order to enhance a light emitting effect, an antireflection layer and a reflection layer are generally formed at a light emitting end and an end opposite to the light emitting end of the laser diode, respectively, to form an F-P Cavity (Fabry-perot Cavity), for example, a DBR (Distributed Bragg Reflector, chinese) structure is generally formed at the end opposite to the light emitting end, and the DBR structure is generally formed by an insulating material. The laser spot is small and has a high optical density, and accumulates relatively high energy in the facets of the F-P cavity, such as the DBR structure. The thermal conductivity of the insulating material of the DBR structure that is formed is typically low, and if there is a defect point in the DBR structure, heat is easily accumulated at the defect point, and the gradually accumulated heat can further burn off the DBR structure, form the optics catastrophe damage, thereby reduce the life-span of the laser diode.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention provides a semiconductor light emitting device and a method for manufacturing the same, wherein a first electrode structure is formed on a back surface of a substrate of the semiconductor device, the first electrode structure includes a connection metal layer, the connection metal layer covers the back surface of the substrate and covers an epitaxial layer below an active layer above the substrate, and the connection metal layer can conduct heat generated by the epitaxial layer and a reflective layer in time, so as to improve the optical catastrophic damage resistance and the thermal reversal resistance of the reflective layer.
According to a first aspect of the present invention, there is provided a semiconductor light emitting device comprising:
a substrate;
the semiconductor light-emitting device comprises a substrate, a stacked epitaxial layer and a light-emitting layer, wherein the stacked epitaxial layer is formed on the front surface of the substrate and comprises a first semiconductor layer, an active layer and a second semiconductor layer, the conductivity type of the first semiconductor layer is opposite to that of the active layer, and the semiconductor light-emitting device emits light from a first end of the stacked epitaxial layer;
a reflective layer formed outside a second end opposite to the first end;
a first electrode structure formed on the back side of the substrate;
wherein the first electrode structure is formed simultaneously outside the reflective layer at the first and second ends of the stacked epitaxial layers.
Optionally, the substrate comprises a GaN-based substrate, and the semiconductor light emitting device comprises a GaN laser diode or a light emitting diode.
Optionally, the reflective layer comprises a multilayer structure formed at the second end.
Optionally, the reflective layer is made of Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 At least one of (a).
Optionally, an anti-reflection layer is further formed at the first end of the stacked epitaxial layer, and the first electrode structure is formed outside the anti-reflection layer.
Optionally, the first electrode structure includes a first ohmic contact layer formed on the back surface of the substrate and a connection metal layer formed outside the first ohmic contact layer, wherein the connection metal layer is further formed outside the anti-reflection layer at the first end of the stacked epitaxial layers and the reflection layer at the second end.
Optionally, the connection metal layer includes a metal reflection layer and a metal bonding layer sequentially formed from the first ohmic contact layer.
Optionally, the connection metal layer is formed of at least one of Ag, al, cu, au, ti, pt, cr.
Optionally, a second electrode structure formed on the second semiconductor layer is further included.
Optionally, the first electrode structure is located lower than the active layer.
According to a second aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device, comprising the steps of:
providing a substrate;
sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the front surface of the substrate to form a stacked epitaxial layer, wherein the semiconductor light-emitting device emits light from a first end of the stacked epitaxial layer;
forming a reflective layer at a second end opposite the first end;
forming a first electrode structure formed on the back surface of the substrate, the first end of the stacked epitaxial layers, and an outer side of the reflective layer.
Optionally, before forming the first electrode structure at the first end, the method further includes: an anti-reflective layer is formed at the first end.
Optionally, forming a reflective layer at a second end opposite the first end comprises sequentially forming a plurality of reflective layers at the second end.
Optionally, the reflective layer is made of Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 At least one of (a).
Optionally, forming the first electrode structure further comprises:
forming a first ohmic contact layer on the back surface of the substrate;
and forming a connecting metal layer outside the first ohmic contact layer, outside the anti-reflection layer and outside the reflection layer.
Optionally, the forming the connection metal layer further comprises:
forming the metal reflecting layer on the outer side of the first ohmic contact layer, the outer side of the anti-reflecting layer and the outer side of the reflecting layer;
and forming a metal bonding layer outside the metal reflecting layer.
Optionally, before forming the first electrode structure, the method further includes the following steps:
providing a slide glass;
coating photoresist on the slide glass;
embedding the semiconductor light-emitting device into the photoresist with the back of the substrate facing upwards, wherein the active layer is completely embedded into the photoresist, and the first ohmic contact layer, the partial anti-reflection layer and the partial reflection layer on the back of the substrate are exposed;
and forming the first ohmic contact layer on the area between the anti-reflection layer and the reflection layer on the back surface of the substrate, and depositing and forming the connecting metal layer on the outer side of the formed first ohmic contact layer and above the photoresist.
Optionally, the connection metal layer includes at least one of Ag, al, cu, au, ti, pt, cr.
Optionally, forming a second electrode structure on the second semiconductor layer is further included.
Optionally, the method further comprises the step of removing the carrier sheet and the residual photoresist on the semiconductor device.
Optionally, the first electrode structure is located lower than the active layer.
As described above, the semiconductor light emitting device and the method for manufacturing the same of the present invention have the following technical effects:
the semiconductor light emitting device comprises a substrate; a stacked epitaxial layer formed on the front side of the substrate, the semiconductor light emitting device emitting light from a first end of the stacked epitaxial layer; a first electrode structure formed on the back side of the substrate; the first electrode structure comprises a first ohmic contact layer formed on the back surface of the substrate and a connecting metal layer formed on the outer side of the first ohmic contact layer, wherein the connecting metal layer is simultaneously formed on the outer sides of an anti-reflection layer at a first end and a reflection layer at a second end of the stacked epitaxial layers, and the first electrode structure is lower than the active layer at the first end. The arrangement of the connecting metal layer does not influence the light-emitting effect of the light-emitting device, and simultaneously can conduct heat generated by the epitaxial layer, the anti-reflection layer and the reflection layer in time, thereby improving the optical catastrophe damage resistance and the thermal overturn resistance of the anti-reflection layer and the reflection layer.
The connection metal layer includes a metal reflective layer capable of enhancing reflection of a laser beam leaking from below the semiconductor light emitting device, thereby enhancing light emitting efficiency of the semiconductor light emitting device, and a metal bonding layer.
In the present invention, the reflective layer formed at the second end of the stacked epitaxial layers includes a multi-layer structure preferably using a combination of insulating materials having a high thermal conductivity, such as Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 Etc., more preferably, al is used 2 O 3 And Ta 2 O 5 . The connecting metal layer is made of a metal material with a high thermal conductivity, for example, at least one of Ag, al, cu, au, ti, pt and Cr. The reflecting layer with higher heat conductivity coefficient and the connecting metal layer have synergistic effect, so that the heat conduction effect is improved, and the capability of resisting optical catastrophe damage of the semiconductor device is further enhanced.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
fig. 1 is a schematic structural diagram of a semiconductor light emitting device according to an embodiment of the present invention.
Fig. 2 is a flowchart illustrating a method for manufacturing a semiconductor light emitting device according to a second embodiment of the present invention.
Fig. 3 shows a schematic view of a substrate provided in the method shown in fig. 2.
Fig. 4 is a schematic structural diagram illustrating the formation of stacked epitaxial layers on a substrate in the method of fig. 2.
Fig. 5 is a schematic diagram of a structure for forming a second electrode on the structure shown in fig. 4.
Fig. 6 is a schematic diagram illustrating a structure of forming a reflective layer on the structure shown in fig. 5.
Fig. 7 shows a schematic view of the structure of fig. 6 placed on a slide.
Fig. 8 is a schematic structural view illustrating a first ohmic contact layer for forming a first electrode structure on a rear surface of a substrate.
Fig. 9 is a schematic diagram illustrating a structure of forming a connection metal layer on the structure shown in fig. 8.
Fig. 10 is a schematic view of a semiconductor light emitting device formed using the method of fig. 2.
Reference numerals
100. Semiconductor light emitting device
101. Substrate and method of manufacturing the same
101-1 substrate front side
101-2 substrate backside
102. Stacked epitaxial layers
1021. First semiconductor layer
1022. Active layer
1023. A second semiconductor layer
103. First terminal of semiconductor light emitting device
104. Second terminal of semiconductor light emitting device
105. Anti-reflection layer
106. Reflective layer structure
1061. A first reflective layer
1062. A second reflecting layer
1063. A third reflective layer
1064. A fourth reflective layer
107. First electrode structure
1071. First ohmic contact layer of first electrode structure
1072. Connecting metal layer
1072-1 metal reflective layer
1072-2 metal bonding layer
108. Second electrode structure
109. Slide glass
110. Photoresist
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
The present embodiment provides a semiconductor light emitting device, which may be a light emitting diode or a laser diode. In this embodiment, a specific structure of a semiconductor light emitting device will be described by taking a GaN-based light emitting diode as an example.
As shown in fig. 1 in combination with fig. 4, the semiconductor light emitting device 100 of the present embodiment includes a substrate 101 and stacked epitaxial layers 102 formed on the substrate 101. The substrate 101 has a substrate front side 101-1 and a substrate back side 101-2. A stacked epitaxial layer 102 is formed on the substrate front side 101-1. The first semiconductor layer 1021, the active layer 1022 and the second semiconductor layer 1023 can be formed on the front substrate surface 101-1 in sequence, for example, by deposition methods commonly used in the art.
In a preferred embodiment of the present embodiment, the substrate 101 is an N-type GaN-based substrate, the first semiconductor layer 1021 is an N-type semiconductor layer having the same conductivity type as the substrate 101, and the second semiconductor layer 1023 is a P-type semiconductor layer having a conductivity type opposite to that of the first semiconductor layer 1021. On the contrary, if the substrate is a P-type substrate, the first semiconductor layer 1021 is a P-type semiconductor layer, and the second semiconductor layer 1023 is an N-type semiconductor layer. In this embodiment, the substrate 101 is an N-type GaN-based substrate, the first semiconductor layer 1021 is an N-type semiconductor layer, and the second semiconductor layer 1023 is a P-type semiconductor layer.
The semiconductor light emitting device 100 emits light from a first end 103 of the stacked epitaxial layers 102, and a reflective layer 106 is formed at a second end 104 opposite to the first end 103. In a preferred embodiment of the present invention, the reflective layer 106 is a Distributed Bragg Reflector (DBR), and the DBR includes a multilayer structure, such as a first reflective layer 1061, a second reflective layer 1062, a third reflective layer 1063, and a fourth reflective layer 1064, which are sequentially formed from the second end 104 to the outside as shown in fig. 1. As shown in fig. 1, the DBR is formed on the end surface of the second end 104 of the semiconductor light emitting device while covering the edge portion of the substrate back surface 101-2 and the edge portion of the surface of the second semiconductor layer 1023. In a preferred embodiment of this embodiment, the DBR is formed from a combination of materials having a relatively high thermal conductivity, such as Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 Etc., preferably Al 2 O 3 And Ta 2 O 5 . By adopting the material combination with relatively high heat conductivity coefficient, the heat conduction capability of the DBR can be improved, and the rapid transfer of heat generated by the DBR can be realized.
As also shown in fig. 1, the semiconductor light emitting device 100 of the present embodiment further includes an antireflection layer 105 formed at the first end 103, the antireflection layer 105 being formed on the end face of the first end 103 while covering the edge portion of the substrate back 101-2 and the edge portion of the surface of the second semiconductor layer 1023. The anti-reflection layer 105 can reduce reflection of laser light and enhance the light emitting efficiency of the semiconductor light emitting device 100.
The semiconductor light emitting device of the present embodiment further includes a first electrode structure 107 formed on the substrate rear surface 101-2 and a second electrode structure 108 formed on the second semiconductor layer 1023. As is well known in the art, the first electrode structure 107 includes a first ohmic contact layer 1071 and a first electrode layer, and the second electrode structure 108 also includes a second ohmic contact layer and a second electrode layer.
As shown in fig. 1, the first electrode structure 107 in the present embodiment includes a first ohmic contact layer 1071 formed on the substrate backside 101-2, and particularly, the first ohmic contact layer 1071 is formed on the substrate backside 101-2 between the reflective layer 106 and the anti-reflective layer 105. The first electrode layer is formed as a connection metal layer 1072 in the present embodiment, as shown in fig. 1, the connection metal layer 1072 is formed outside the first ohmic contact layer 1071 while being formed on the outer layers of the reflective layer 106 and the anti-reflective layer 105 formed on the back surface 101-2 of the substrate at both sides of the first ohmic contact layer 1071, further, the connection metal layer 1072 is formed outside the anti-reflective layer 105 outside the first end 103 and the reflective layer 106 outside the second end 104, and the connection metal layer 1072 is positioned lower than the active layer 1022 in the stacked epitaxial layer 102 at the first end 103 and the second end 104.
In a preferred embodiment of this embodiment, the connection metal layer 1072 includes a metal reflective layer 1072-1 and a metal bonding layer 1072-2 formed in this order from the first ohmic contact layer 1071. More preferably, the connection metal layer 1071 is formed of a material having a relatively high thermal conductivity, such as at least one of Ag, al, cu, au, ti, pt and C.
The connecting metal layer forms a part which covers the back surface of the substrate and two ends of the device and is lower than the position of the active layer on the semiconductor device, and therefore a first electrode structure which is concave in shape on the whole is formed. The first electrode structure is in contact with the reflecting layer and is formed by adopting a material with relatively high heat conductivity coefficient, so that the heat accumulated by the epitaxial layer, the anti-reflecting layer and the reflecting layer can be conducted in time, and the optical catastrophe damage resistance and the thermal turnover resistance of the reflecting layer can be improved.
In addition, the connecting metal layer is formed on the back surface of the whole substrate, and the metal reflecting layer can improve the reflection of light leakage below the first semiconductor layer and enhance the luminous efficiency of the semiconductor light-emitting device.
Example two
The present embodiment provides a method for manufacturing a semiconductor light emitting device, as shown in fig. 2, the method including the steps of:
providing a substrate;
sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the front surface of the substrate to form a stacked epitaxial layer, wherein the semiconductor light-emitting device emits light from a first end of the stacked epitaxial layer;
forming a reflective layer at a second end opposite to the first end;
forming a first electrode structure formed on the back surface of the substrate, the first end of the stacked epitaxial layers and the outer side of the reflective layer, and the first electrode is positioned lower than the active layer.
The above method is explained in detail with reference to fig. 3 to 10. As shown in fig. 3, a substrate 100 is first provided, the substrate 100 having a substrate front side 101-1 and a substrate back side 101-2. The substrate may be a substrate material commonly used in the art, such as sapphire, a GaN-based substrate, or the like. In this embodiment, an N-type GaN-based substrate is used as an example for description.
Then, as shown in fig. 4, a stacked epitaxial layer 102 is formed on the substrate front side 101-1 of the substrate 101. A first semiconductor layer 1021, an active layer 1022, and a second semiconductor layer 1023 are deposited in this order, for example, on the GaN-based substrate 100. In the present embodiment, the first semiconductor layer 1021 is an N-type semiconductor layer, and the second semiconductor layer 1023 is a P-type semiconductor layer. The semiconductor light emitting device thus formed emits light from the first end 103.
Then, as shown in fig. 5, a second electrode structure 108 is formed over the second semiconductor layer 1023, and the second electrode structure 108 includes a second ohmic contact layer and a second electrode layer, as known to those skilled in the art, which is not shown in detail. Then, as shown in fig. 6, an anti-reflection layer 105 is formed at the first end of the structure shown in fig. 5 to reduce reflection of the laser light emitted from the first end 103. A reflective layer 106 is formed at the second end 104. In a preferred embodiment of the present embodiment, the reflective layer 106 is a DBR including a plurality of reflective layers, for example, a first reflective layer 1061, a second reflective layer 1062, a third reflective layer 1063 and a fourth reflective layer 1064. The antireflection layer 105 and the reflection layer 106 are formed on the end faces of the first end 103 and the second end 104, and also formed on the edge portion of the back surface 101-2 of the substrate and the edge portion of the surface of the second semiconductor layer 1023 as shown in fig. 6. Preferably, the reflective layer 106 is made of an insulating material with a high thermal conductivityFormed, for example, of Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 Etc., more preferably, from Al 2 O 3 And Ta 2 O 5 And (4) forming. The reflecting layer forms an F-P cavity, enhances the reflection of laser, and enhances the luminous efficiency of the semiconductor light-emitting device by the cooperation of the reflecting layer 105 at the outer side of the first end 103. In addition, the reflective layer 106 is formed of the insulating material having a high thermal conductivity, which can increase the heat conduction accumulated in the reflective layer 106 and reduce the optical catastrophic damage of the reflective layer.
A first electrode structure 107 is then formed on the substrate backside 101-2. As shown in fig. 7-10, a carrier sheet 109 is first provided, and a photoresist 110 with a certain thickness is formed on the carrier sheet 109; the structure shown in fig. 6 is then placed upside down and buried in the photoresist 110. The photoresist 110 has a thickness at least completely covering the active layer 1023, and exposes the first ohmic contact layer, the partial antireflection layer and the partial reflection layer on the back of the substrate, as shown in fig. 7. Then, as shown in fig. 8, a first ohmic contact layer 1071 is formed on a region between the substrate back surface 101-2 antireflection layer 105 and the reflection layer 106. Then, as shown in fig. 9, a connection metal layer 1072 is deposited outside the first ohmic contact layer 1071 and above the photoresist 110, for example, a metal reflective layer 1072-1 is first deposited and then a metal bonding layer 1072-2 is formed outside the metal reflective layer 1072-1. The connection metal layer may be formed of a metal material having a high thermal conductivity, for example, at least one of Ag, al, cu, au, ti, pt, and Cr.
Under the action of the photoresist 110, the connection metal layer 1072 is positioned lower than the active layer 1022 and does not exceed the active layer 1022, thereby not affecting the light emission of the semiconductor light emitting device. In addition, the connecting metal layer partially covers the reflecting layer and the anti-reflecting layer and is made of a material with a higher heat conductivity coefficient, so that the heat accumulated by the epitaxial layer, the anti-reflecting layer and the reflecting layer can be quickly conducted, and the optical catastrophe damage resistance and the thermal turnover resistance of the reflecting layer are improved.
In addition, the connecting metal layer is formed on the back of the whole substrate, the metal reflecting layer can improve the reflection of light leakage below the first semiconductor layer, and the metal reflecting layer can improve the vertical reflection of the device to laser and the reflection of lower angles under the cooperation of the metal reflecting layer and the reflecting layer, so that the light emitting efficiency of the semiconductor light emitting device is enhanced.
Finally, the photoresist 110 and the carrier 109 are removed, and the formed structure is turned over, so as to form the semiconductor light emitting device shown in fig. 10. The slide glass 109 can be recycled for the preparation of the semiconductor light-emitting devices of the next batch, so that the reuse is realized and the preparation cost is reduced.
As described above, the semiconductor light emitting device and the method for manufacturing the same of the present invention have the following technical effects:
the semiconductor light emitting device comprises a substrate; a stacked epitaxial layer formed on the front side of the substrate, the semiconductor light emitting device emitting light from a first end of the stacked epitaxial layer; a first electrode structure formed on the back side of the substrate; the first electrode structure comprises a first ohmic contact layer formed on the back surface of the substrate and a connecting metal layer formed on the outer side of the first ohmic contact layer, wherein the connecting metal layer is simultaneously formed on the outer sides of the anti-reflection layer at the first end and the reflection layer at the second end of the stacked epitaxial layers, and the connecting metal layer is lower than the active layer. The arrangement of the connecting metal layer does not influence the light-emitting effect of the light-emitting device, and simultaneously can conduct heat generated by the epitaxial layer, the anti-reflection layer and the reflection layer in time, thereby improving the optical catastrophe damage resistance and the thermal overturn resistance of the anti-reflection layer and the reflection layer.
The connection metal layer includes a metal reflection layer capable of enhancing reflection of a laser beam leaked from below the semiconductor light emitting device and a metal bonding layer, thereby enhancing light emitting efficiency of the semiconductor light emitting device.
In the present invention, the reflective layer formed at the second end of the stacked epitaxial layers includes a multi-layer structure preferably using a combination of insulating materials having a high thermal conductivity, such as Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 Etc., preferably, al is used 2 O 3 And Ta 2 O 5 . The connecting metal layer is made of a metal material with a high thermal conductivity, for example, at least one of Ag, al, cu, au, ti, pt and Cr. The reflecting layer with higher heat conductivity coefficient and the connecting metal layer have synergistic effect, so that the heat conduction effect is improved, and the capability of resisting optical catastrophe damage of the semiconductor device is further enhanced.
The above-described embodiments are merely illustrative of the principles of the present invention and its efficacy, rather than limiting the invention, and it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit and scope of the invention, such modifications and variations being within the scope of the appended claims.
Claims (14)
1. A semiconductor light emitting device, comprising:
a substrate having opposing front and back sides;
the stacked epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer, the active layer and the second semiconductor layer are sequentially formed on the front surface of the substrate, the conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer, and the semiconductor light-emitting device emits light from a first side surface of the stacked epitaxial layer;
a reflective layer formed on a side surface opposite to the first side surface of the semiconductor light emitting device;
the first electrode structure comprises a first ohmic contact layer positioned on the back surface of the substrate and a connecting metal layer positioned on the first ohmic contact layer and on one side far away from the substrate;
the connection metal layer extends to a first side of the stacked epitaxial layers and a side opposite to the first side, and covers the reflective layer, the reflective layer includes a multi-layer structure formed on the side opposite to the first side of the semiconductor light emitting device, and each layer of the structure of the reflective layer is connected to the connection metal layer, respectively.
2. The semiconductor light emitting device of claim 1, wherein the substrate comprises a GaN-based substrate and the semiconductor light emitting device comprises a GaN laser diode.
3. The semiconductor light emitting device according to claim 1, wherein the reflective layer is made of Al 2 O 3 、Ta 2 O 5 、MgF 2 、SiO 2 、TiO 2 、ZrO 2 And HfO 2 At least one of (a).
4. The semiconductor light emitting device of claim 1, wherein an anti-reflective layer is formed on the first side of the semiconductor light emitting device.
5. The semiconductor light emitting device of claim 1, wherein the connection metal layer comprises a metal reflective layer and a metal bonding layer formed in sequence from the first ohmic contact layer.
6. The semiconductor light emitting device according to claim 5, wherein the connection metal layer is formed of at least one of Ag, al, cu, au, ti, pt, and Cr.
7. The semiconductor light emitting device of claim 1, further comprising a second electrode structure formed on the second semiconductor layer.
8. The semiconductor light-emitting device according to claim 1, wherein the connection metal layer is positioned lower than the active layer outside the reflective layer.
9. A method for manufacturing a semiconductor light emitting device, comprising the steps of:
providing a substrate;
sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the front surface of the substrate to form a stacked epitaxial layer, wherein the semiconductor light-emitting device emits light from a first side surface of the stacked epitaxial layer;
forming a reflective layer on one side opposite to the first side of the semiconductor light emitting device;
forming a first ohmic contact layer on the back surface of the substrate and forming a connecting metal layer on one side of the first ohmic contact layer, which is far away from the substrate, so as to form a first electrode structure; the connecting metal layer extends to a first side surface of the epitaxial stacked layer and a side surface opposite to the first side surface, and covers the reflecting layer;
forming a reflective layer on a side opposite to the first side of the semiconductor light emitting device includes sequentially forming a plurality of reflective layers on a side opposite to the first side of the semiconductor light emitting device such that each layer of the reflective layers is connected to the connection metal layer, respectively.
10. The method according to claim 9, further comprising, before forming the first electrode structure on the back side of the substrate: forming an anti-reflective layer on the first side of the semiconductor light emitting device.
11. The method of claim 9, wherein forming the connecting metal layer further comprises:
forming a metal reflecting layer on one side of the first ohmic contact layer far away from the substrate, wherein the metal reflecting layer also extends to cover the upper surface of the reflecting layer;
a metal bonding layer is formed over the metal reflective layer.
12. The method of claim 9, further comprising forming a second electrode structure on the second semiconductor layer.
13. The method of claim 10, further comprising, prior to forming the first electrode structure:
providing a slide glass;
coating photoresist on the slide glass;
embedding the semiconductor light-emitting device into the photoresist with the back surface of the substrate facing upwards, embedding the active layer into the photoresist completely, and exposing the first ohmic contact layer and at least part of the reflecting layer on the back surface of the substrate;
and forming the first ohmic contact layer on the area between the anti-reflection layer and the reflection layer on the back surface of the substrate, and depositing and forming the connecting metal layer on the side, away from the substrate, of the formed first ohmic contact layer and above the photoresist.
14. The method of claim 13, further comprising the step of removing the carrier sheet and the photoresist remaining on the semiconductor device.
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