CN117317098A - Light emitting diode and light emitting device - Google Patents
Light emitting diode and light emitting device Download PDFInfo
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- CN117317098A CN117317098A CN202311278213.6A CN202311278213A CN117317098A CN 117317098 A CN117317098 A CN 117317098A CN 202311278213 A CN202311278213 A CN 202311278213A CN 117317098 A CN117317098 A CN 117317098A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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Abstract
The application provides a light emitting diode and a light emitting device, wherein an epitaxial structure of the light emitting diode comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked from the front side of a substrate, and a first electrode is positioned above the N-type layer and is in conductive connection with the N-type layer; the first reflecting structure comprises at least one group of first material layers and second material layers which are sequentially overlapped, and the first material layers and the second material layers are AlGaInP material layers with different Al component contents. The first reflecting structure can reflect the light which is emitted from the active layer vertically or at a small angle and blocked by the first electrode and cannot be emitted, reflect part of the light to the active layer, absorb the light by the active layer and then re-emit light, and repeat a plurality of rounds, wherein the light-emitting angle of part of the re-emitted light changes, so that the light emitted by the first electrode is avoided, and the external quantum efficiency of the light-emitting diode is improved.
Description
Technical Field
The present invention relates to the field of semiconductor devices and devices, and more particularly, to a light emitting diode and a light emitting device.
Background
In order to improve the current expansion performance, the conventional GaAs red light flip-chip structure (Reverse Structure, RS) core particle generally forms an electrode expansion strip, however, the electrode expansion strip is easy to be crushed during packaging. In order to solve the problem, the electrode extension strips are generally cancelled through structural optimization design, so that the electrode extension strip crush phenomenon in the packaging process is reduced.
However, after the electrode extension strip is removed, the current expansibility is poor, and the current is concentrated in a small range area under the electrode, so that most of the light emitted by the active layer is concentrated under the electrode, and due to the blocking of the electrode, the light cannot exit, and therefore, the problem of the lower external quantum efficiency of the light-emitting diode is caused.
Disclosure of Invention
In view of the above-mentioned drawbacks of the GaAs red flip-chip structure in the prior art, the present invention provides a light emitting diode and a light emitting device, so as to solve one or more of the above-mentioned problems.
In one embodiment of the present application, there is provided a light emitting diode including at least:
the substrate is provided with a substrate front surface and a substrate back surface which are oppositely arranged;
the epitaxial structure is formed on one side of the front surface of the substrate and comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked from the front surface of the substrate;
the first electrode is positioned above the N-type layer and is in conductive connection with the N-type layer;
the first reflecting structure comprises at least one group of reflecting film groups, each group of reflecting film groups comprises a first material layer and a second material layer which are sequentially overlapped, and the first material layer and the second material layer are AlGaInP material layers with different Al component contents.
Another embodiment of the present application provides a light emitting device, including: the LED comprises a circuit substrate and at least one LED fixed to the circuit substrate, wherein the LED comprises the LED provided by the application.
As described above, the light emitting diode and the light emitting device of the present application have the following beneficial effects:
the light-emitting diode comprises a substrate, an epitaxial structure and a first electrode, wherein the epitaxial structure and the first electrode are formed on one side of the front surface of the substrate, the epitaxial structure comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked from the front surface of the substrate, and the first electrode is positioned above the N-type layer and is in conductive connection with the N-type layer; the first reflecting structure comprises at least one group of reflecting film groups, each group of reflecting film groups comprises a first material layer and a second material layer which are sequentially overlapped, and the first material layer and the second material layer are AlGaInP material layers with different Al component contents. The first reflecting structure can reflect the light which is emitted from the active layer vertically or at a small angle and blocked by the first electrode and cannot be emitted, reflect part of the light to the active layer, absorb the light by the active layer and then re-emit light, and repeat a plurality of rounds, wherein the light-emitting angle of part of the re-emitted light changes, so that the light emitted by the first electrode is avoided, and the external quantum efficiency of the light-emitting diode is improved.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode in the prior art.
Fig. 2 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Fig. 3 is a flow chart of a method for manufacturing the light emitting diode shown in fig. 2.
Fig. 4 shows a schematic view of the formation of an epitaxial structure on a growth substrate.
Fig. 5 is a schematic diagram illustrating the formation of a dielectric layer and a second reflective structure over the structure shown in fig. 4.
Fig. 6 shows a schematic structure of forming a bonding layer over a substrate.
Fig. 7 shows a schematic diagram of a structure for bonding the structure of fig. 5 to a substrate.
Fig. 8 is a schematic view showing a structure after removing the growth substrate.
Fig. 9 is a schematic top view of a light emitting diode according to the first embodiment.
Fig. 10 is a schematic top view of a light emitting diode according to an alternative embodiment of the first embodiment.
Fig. 11 is a schematic structural diagram of a light emitting device according to a second embodiment of the invention.
Description of element reference numerals
01. A substrate; 02. an active layer; 03. an N-type semiconductor layer; 04. a first electrode; 05. a P-type semiconductor layer; 06. a second electrode; 100. a substrate; 101. an epitaxial structure; 1011. an N-type semiconductor layer; 1012. an active layer; 1013. a P-type semiconductor; 102. a first electrode; 1021. an extension bar; 103. a first reflective structure; 104. a bonding layer; 105. a second reflective structure; 106. Dielectric layer, 1060, via; 107. a back gold layer; 108. an insulating protective layer; 200. a growth substrate; 201. a buffer layer; 202. a first cutoff layer; 203. an N-type ohmic contact layer; 204. a second cutoff layer; 300. a light emitting device; 301. a circuit substrate; 302. a light emitting diode.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As shown in fig. 1, in the prior art, a conventional GaAs red light flip-chip structure includes a substrate and a P-type semiconductor layer 05, an active layer 02 and an N-type semiconductor layer 03 formed over the substrate 01, and a first electrode 04 and a second electrode 06 are formed on the N-type semiconductor layer side and the P-type semiconductor layer side, respectively. The first electrode 04 covers only a part of the surface of the N-type semiconductor layer 03, with one side of the N-type semiconductor layer 03 serving as a light-emitting surface. In addition, in order to reduce the electrode extension crush phenomenon during the packaging process, the current extension above the N-type semiconductor layer 03 is generally omitted, but in this case, when a voltage is applied to the first electrode 04 and the second electrode 06, current is concentrated directly below the first electrode 04, and when light radiated by the active layer 02 is emitted, light with a small angle or light emitted vertically is blocked by the first electrode 04 and cannot be emitted, as shown in fig. 1, so that the light emitting effect of the chip is affected, and the brightness loss is large.
In view of the foregoing problems with light emitting diodes in the prior art, the present application provides a light emitting diode, which at least includes:
the substrate is provided with a substrate front surface and a substrate back surface which are oppositely arranged;
the epitaxial structure is formed on one side of the front surface of the substrate and comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked from the front surface of the substrate;
the first electrode is positioned above the N-type layer and is in conductive connection with the N-type layer;
the first reflecting structure comprises at least one group of reflecting film groups, each group of reflecting film groups comprises a first material layer and a second material layer which are sequentially overlapped, and the first material layer and the second material layer are AlGaInP material layers with different Al component contents. As described above, the first reflective structure is provided between the N-type semiconductor layer and the first electrode, the first reflective structure includes at least one reflective film group, each reflective film group includes a first material layer and a second material layer stacked in sequence, and the first material layer and the second material layer are AlGaInP material layers having different Al component contents. The first reflecting structure can reflect light which is emitted from the active layer vertically or at a small angle and is blocked by the first electrode and cannot be emitted, reflects part of the light to return to the active layer, and emits light again after being absorbed by the active layer, and a plurality of rounds are repeated, so that the angle of light emission of part of light after the light emission again changes, and the first electrode is avoided from being emitted, and the external quantum efficiency of the light-emitting diode is improved.
Optionally, the first reflecting structure includes 2 to 50 groups of the reflecting film groups. The number of the reflecting modules can be set according to actual needs, so that the optimal reflecting effect can be realized, and the light emitting efficiency of the light emitting diode is improved.
Optionally, the content of the Al component in the first material layer is between 35% and 50%.
Optionally, the content of the Al component in the second material layer is between 25% and 40%.
The addition of Al and the selection of Al components in the first material layer and the second material layer make the reflectivity of the first material layer and the second material layer to light different, thereby being capable of realizing a total reflection effect. And the material selection can reduce the absorption of the N-type layer below the first reflecting structure to light rays, and further improve the light emitting effect of the light emitting diode.
Optionally, the optical thickness of the first material layer and the second material layer is nλ/4, where λ is a wavelength of light radiated by the active layer. The optical thickness of the material is set according to the wavelength of the light emitting diode radiation so as to better reflect the light radiated by the active layer and realize the optimal reflection effect.
Optionally, the wavelength λ of the light radiated by the active layer is between 550nm and 950nm. The light of this wavelength is red light,
optionally, the first material layer is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 A P layer of a second material of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 And a P layer. The specific material combination of the first material layer and the second material layer can achieve the optimal reflection effect, and the light emitting efficiency of the light emitting diode is improved.
Optionally, the thickness of the first material layer is between 10nm and 20nm, and the thickness of the second material layer is between 20nm and 30nm. The thickness of the first material layer and the thickness of the second material layer are set so that the optimal reflection effect is achieved, the whole thickness of the device is not affected, and the diffusion of current is not affected.
Optionally, the light emitting diode further includes:
the bonding layer is positioned between the substrate and the epitaxial structure and is used for bonding the epitaxial structure and the substrate;
the second reflecting structure is positioned between the bonding layer and the epitaxial structure to form a metal mirror structure;
the dielectric layer is positioned between the second reflecting structure and the epitaxial structure, a through hole is formed in the dielectric layer, and the second reflecting structure fills the through hole and is electrically connected with the P-type semiconductor layer of the epitaxial structure.
The bonding layer and the second reflecting structure can be formed into a metal layer, and the metal layer can further reflect the light emitted to the part, so that the light emitting effect of the light emitting diode can be further improved.
Optionally, in the stacking direction of the epitaxial structure, the first reflective structure is located directly below the first electrode, and a projection area of the first electrode on the front surface of the substrate is smaller than or equal to a projection area of the first reflective structure on the front surface of the substrate. The first reflecting structure is arranged to reflect the part of the light blocked by the electrode so that the part of the light can exit in the area outside the electrode without affecting the light exiting in other areas.
Optionally, the N-type semiconductor layer at least includes an N-type waveguide layer, an N-type confinement layer, an N-type window layer, a second stop layer, and an N-type ohmic contact layer stacked in order from the active layer, the first reflective structure is formed between the N-type window layer and the second stop layer, and the first electrode is formed above the N-type ohmic contact. Since the second cut-off layer GaInP layer has a certain absorption effect on light, the first reflective structure 103 is disposed below the second cut-off layer GaInP layer, which is beneficial to reducing absorption of light and improving light emitting efficiency of the light emitting diode.
Optionally, the light emitting diode further includes a second electrode located on a back side of the substrate, and the second electrode is electrically connected with the P-type semiconductor layer. The back gold layer may be used as the second electrode, or may be formed separately, and the back gold layer may also function as a reflection layer to further reflect light emitted through the substrate.
Another embodiment of the present invention provides a light emitting device including: the LED comprises a circuit substrate and at least one LED fixed to the circuit substrate, wherein the LED comprises the LED provided by the application.
Example 1
The present embodiment provides a light emitting diode, as shown in fig. 2, which at least includes a substrate 100, an epitaxial structure 101 formed above the substrate 100, a first electrode 102 formed above the epitaxial structure 101, and a first reflective structure 103. The epitaxial structure 101 includes at least a P-type semiconductor layer 1013, an active layer 1012, and an N-type semiconductor layer 1011 stacked in this order over a substrate 100. The first electrode 102 is formed above the N-type semiconductor layer 1011 and electrically connected to the N-type semiconductor layer 1011. The first reflective structure 103 is formed between the first electrode 102 and the N-type semiconductor layer 1011. In an alternative embodiment, the epitaxial structure 101 is an AlGaInP-based epitaxial structure, and the N-type semiconductor layer 1011 has a light emitting side. The N-type semiconductor layer 1011 is optionally an N-type AlInP or AlGaInP layer for providing electrons. The N-type AlInP or AlGaInP layer provides electrons by doping with N-type impurities, which may be Si, ge, sn, se, te, or the like, for example. The P-type semiconductor layer 1013 is optionally a P-type AlInP or AlGaInP layer, holes are provided by doping P-type impurities, and the P-type impurities may be Mg, zn, ca, sr, C, ba or the like. In this embodiment, the P-type impurity is preferably Mg or C.
Referring also to fig. 2, the first reflective layer 103 is formed substantially as part of the epitaxial structure 101 during formation of the epitaxial structure 101. The first reflective structure 103 is located between the N-type semiconductor layer 1011 and the first electrode 102, alternatively it may be a DBR structure formed by alternately stacking layers of different materials. In this embodiment, the first reflecting structure 103 includes at least one set of reflecting modules, and each reflecting module includes a first material layer and a second material layer stacked at a time, where the first material layer and the second material layer are AlGaInP material layers with different Al composition contents. In alternative embodiments, the first reflective structure 103 comprises 2 to 50 groups of said reflective film groups, which may be, for example, 7 groups, 15 groups, 20 groups, 30 groups or 40 groups, 50 groups, etc. The Al component content of the first material layer is between 35% and 50%, for example, 35%, 40%, 45%, 50%; the Al component of the second material layer is present in an amount of 25% to 40%, for example,25%, 30%, 35% and 40%. Further, the content of the Al component in the first material layer is 40%, and the content of the Al component in the second material layer is 30%, i.e., at this time, the first material layer is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 A P layer, a second material layer of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 And a P layer. The above-mentioned material layer composition enables an optimal radiation effect.
In addition, the optical thickness and the actual thickness of each material layer in the reflective module are important parameters for achieving the optimal reflective effect, and in this embodiment, the optical thicknesses of the first material layer and the second material layer are each nλ/4, where λ is the wavelength of the light radiated by the active layer 1012 in the epitaxial structure 101. For example, the wavelength λ of light radiated from the active layer 1012 in this embodiment is 550nm to 950nm. The optical thicknesses of the first material layer and the second material layer are determined according to the wavelength or wavelength range of the actual radiation of the active layer 1012. And then confirming the actual thickness of the first material layer and the second material layer according to the relation between the optical thickness and the refractive index of the material layers, and forming the reflection module according to the actual thickness. In this embodiment, the thickness of the first material layer is between 10nm and 20nm, and the thickness of the second material layer is between 20nm and 30nm. Further, the thickness of the first material layer may be, for example: the thickness of the second material layer may be 25nm at 15 nm.
Referring also to fig. 2, in the present embodiment, the reflective layer is formed in a forward projection range of the first electrode 102 on a plane in which the N-type semiconductor layer 1011 is located, or in a smaller area outside the forward projection range of the first electrode 102. That is, the orthographic projection area of the first electrode 102 on the plane of the N-type semiconductor layer 1011 is equal to or slightly smaller than the orthographic projection area of the first reflective structure 103 on the plane of the N-type semiconductor layer 1011. Thus, while ensuring that the first reflecting structure 103 is capable of completely reflecting the light blocked by the first electrode 102, the emission effect thereof is increased, thereby increasing the light emitting effect of the light emitting diode.
In an alternative embodiment, the N-type semiconductor layer 1011 generally comprises N-type waveguide layers stacked sequentially from the top to the bottom of the active layer 1012, which is generally an N-type AlGaInP layer, an N-type confinement layer, which is generally an N-type AlGaInP layer, and an N-type window layer, which is generally an AlGaInP layer. As shown in fig. 2, the N-type layer as the light emitting surface is formed as a roughened surface, which is advantageous for further improving the light extraction efficiency and improving the light emitting effect. Wherein the roughened surface is formed on the N-type window layer.
Optionally, a second stop layer 204 and an N-type ohmic contact layer 203 are further formed between the first reflective structure 103 and the first electrode 102, where the second stop layer 204 may be a GaInP layer and the N-type ohmic contact layer 203 may be a GaAs layer. The first electrode 102 contacts the N-type ohmic contact layer 203 to reduce contact resistance with the first semiconductor layer and improve electrical performance of the light emitting diode. The first reflecting structure 103 is located between the N-type semiconductor layer 1011 (specifically, the N-type window layer) and the second cut-off layer 204, and since the second cut-off layer GaInP layer has a certain absorption effect on light, the first reflecting structure 103 is disposed below the second cut-off layer, which is beneficial to reducing absorption of light and improving light extraction efficiency.
As also shown in fig. 2, the light emitting diode of the present embodiment further includes: a bonding layer 104, located between the substrate 100 and the epitaxial structure 101, for bonding the epitaxial structure 101 and the substrate 100; a second reflective structure 105 located between the bonding layer 104 and the epitaxial structure 101, forming a metal mirror structure; and a dielectric layer 106 between the second reflective structure 105 and the epitaxial structure 101, wherein a via 1060 is formed in the dielectric layer 106, and the second reflective structure 105 fills the via 1060 and is electrically connected to the P-type semiconductor layer 1013 of the epitaxial structure 101. The dielectric layer 106 may be SiO 2 、SiN、SiON、TiO 2 And the like, the dielectric layer 106 and the second reflecting structure 105 may form a total reflection structure, so as to further enhance the reflection of light. In an alternative embodiment, a back gold layer 107 may be further formed on the side of the substrate 100 opposite to the side on which the epitaxial structure 101 is bonded, where the back gold layer 107 may be used as a second electrode and electrically connected to the P-type semiconductor layer 1013, and may also perform a certain reflection function to reflect the light emitted from the substrate 100, so as to improve the light emitting effect of the light emitting diode. In addition, the surface of the LED can be provided with insulation protectionAnd the protective layer 108 is used for protecting the device from external impurities and water vapor, so that the service life of the device is prolonged.
As shown in fig. 9, which shows a schematic top view of the light emitting diode shown in fig. 2. As can be seen from fig. 9, the first electrode 102 of the light emitting diode does not have an extension bar or the like, so that the problem of crush damage to the extension bar can be avoided when the light emitting diode is packaged, and accordingly, the reliability of the light emitting diode can be improved.
It will be understood that, as shown in fig. 10, extension strips 1021 may be formed around the first electrode 102, so that the lateral extension of the current may be further improved and the light emitting effect thereof may be improved.
The embodiment also provides a method for manufacturing the light emitting diode, as shown in fig. 3, which includes the following steps:
s100: providing a growth substrate;
s200: sequentially growing an N type, an active layer and a second semiconductor layer structure on the growth substrate to form an epitaxial structure;
referring to fig. 4, a growth substrate 200 is first provided, and the growth substrate 200 may be any substrate suitable for epitaxy, such as a Si substrate, a SiC substrate, a sapphire substrate, a GaAs substrate, or the like. In this embodiment, a GaAs substrate is used.
Before growing the N-type semiconductor layer 1011, a buffer layer 201, a first stop layer 202, an N-type ohmic contact layer 203, and a second stop layer 204 are grown on the front surface of the growth substrate 200, wherein the buffer layer 201 may be a GaAs layer, and the buffer layer 201 may effectively alleviate lattice defects caused by lattice mismatch between the growth substrate 200 and the N-type semiconductor layer 1011, thereby improving the subsequent crystal growth quality. The first stop layer 202 may be formed as a GaInP layer, and the first stop layer 202 may serve as an etch stop layer for subsequent removal of the growth substrate 200 to control the etch depth, preventing unnecessary damage or performance loss due to overetching or underetching. The N-type ohmic contact layer 203 is formed as a GaAs layer, and the N-type ohmic contact layer 203 is exposed when the growth substrate 200 is removed to form ohmic contact with the subsequently formed first electrode 102, thereby reducing contact resistance. The second stopper 204 is formed as a GaInP layer as a stopper for subsequently roughening the N-type semiconductor layer 1011, preventing excessive roughening, and the like.
Then, the first reflective structure 103 is formed over the second cut-off layer 204, and as described above, the first reflective structure 103 is formed as a DBR structure in which different material layers are alternately stacked. For example comprising alternating layers of a first material and a second material, in this embodiment the first material is chosen to be (Al 0.4 Ga 0.6 ) 0.5 In 0.5 A P layer, a second material layer of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 And a P layer. The first material layer and the second material layer are alternately deposited over the second cut-off layer 204, and optionally, 2 to 50 sets of the first material layer and the second material layer are deposited until a DBR structure of a desired thickness is formed.
After the first reflective structure 103 is formed, the N-type semiconductor layer 1011 is formed, specifically, an N-type window layer, an N-type confinement layer and an N-type waveguide layer are sequentially deposited over the first semiconductor layer, where the N-type window layer is an AlGaInP layer, its thickness is usually about 3 μm, and the N-type window layer is roughened later to form a roughened surface as a light-emitting surface. The N-type limiting layer is an N-type AlInP layer, and the N-type waveguide layer is an N-type AlGaInP layer. The above structures may be deposited by conventional means, and are not described herein.
After the N-type semiconductor layer 1011 is formed, a multiple quantum well layer is deposited on the surface thereof to form an active layer 1012, and the active layer 1012 may be a multiple quantum well layer formed of AlGaInP/AlInP. A P-type semiconductor layer 1013 is formed over the active layer 1012, specifically, a P-type AlGaInP layer is sequentially deposited as a P-type waveguide layer, and a P-type AlInP layer is deposited as a P-type confinement layer. A transition layer may also be deposited over the P-type confinement layer, as well as a current spreading layer, which may be a GaP layer.
S300: forming a second reflecting structure;
referring to fig. 5, after forming the P-type semiconductor layer 1013, a step of forming a second reflective structure 105 over the P-type semiconductor layer 1013 is further includedThe second reflective structure 105 may be a metal specular reflective layer or a total reflective structure formed by a metal specular reflective layer and the dielectric layer 106. In this embodiment, a total reflection structure is optional. For example, first a dielectric layer 106 is deposited over the P-type semiconductor layer 1013, which dielectric layer 106 may be SiO 2 、SiN、SiON、TiO 2 One or a combination of any of the above. The dielectric layer 106 is then etched to form a via 1060 through the dielectric layer 106, and then a metal layer is deposited over the dielectric layer 106 and in the via 1060 to form a metal reflective layer. The metal reflecting layer may be a metal material such as Ag, au, al, or an alloy layer of two or more of these metal materials.
S400: bonding the epitaxial layer to a substrate on one side of the P-type semiconductor layer;
referring to fig. 6, a substrate 100 is first provided, and the substrate 100 may be an insulating substrate, a semiconductor substrate, or a conductive substrate, for example, a semiconductor Si substrate in this embodiment. A bonding layer 104 is then formed on the front side of the substrate 100. Then, as shown in fig. 7, the P-type semiconductor layer 1013 is bonded to the substrate 100 via the bonding layer 104.
S500: removing the growth substrate;
then, as shown in fig. 8, the growth substrate 200 is removed, and the growth substrate 200 is stripped, for example, by a wet etching method, exposing the ohmic contact layer.
Referring again to fig. 2, a first electrode 102 is formed on the surface of the exposed ohmic contact layer, and optionally, the first electrode 102 is a metal layer or alloy layer of Ti, pt, au, or the like. In addition, a back gold layer 107 is formed on the back surface of the substrate 100, and the back gold layer 107 can simultaneously play a role in reflecting light emitted from the substrate 100, so as to further improve the light emitting effect of the light emitting diode; the back gold layer 107 may also be used as a second electrode and electrically connected to the P-type semiconductor layer 1013. Then, the ohmic contact layer covered by the first electrode 102 and the second stop layer 204 are etched until the first reflective structure 103 is exposed, and then a roughening treatment is performed from the surface of the first reflective structure 103, where a roughened surface is usually formed on the surface of the N-type semiconductor layer 1011, and the roughened surface is the light emitting surface of the light emitting diode, because the thickness of the first reflective structure 103 is thinner.
Finally, an insulating protection layer 108 is formed on the exposed surface area and side wall of the light emitting diode to protect the device from being damaged by external moisture, magazines and the like, so that the service life of the device is prolonged. The insulating protective layer 108 may be SiO 2 A composite material layer of one or more of SiN and SiON.
Example two
The present embodiment provides a light emitting device, as shown in fig. 11, the light emitting device 300 includes a circuit substrate 301 and at least one light emitting diode 302 fixed to the circuit substrate 301, where the light emitting diode includes the light emitting diode provided in the first embodiment of the present application. Since the light emitting device comprises the light emitting diode provided by the first embodiment, the light emitting device has good light emitting effect and better reliability.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (13)
1. A light emitting diode comprising at least:
the substrate is provided with a substrate front surface and a substrate back surface which are oppositely arranged;
the epitaxial structure is formed on one side of the front surface of the substrate and comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked from the front surface of the substrate;
the first electrode is positioned above the N-type layer and is in conductive connection with the N-type layer;
the first reflecting structure comprises at least one group of reflecting film groups, each group of reflecting film groups comprises a first material layer and a second material layer which are sequentially overlapped, and the first material layer and the second material layer are AlGaInP material layers with different Al component contents.
2. The led of claim 1, wherein the first reflective structure comprises 2 to 50 groups of the reflective film groups.
3. The led of claim 1, wherein the Al component in the first material layer is present in an amount of 35% to 50%.
4. The led of claim 1, wherein the Al component in the second material layer is present in an amount of 25% to 40%.
5. The light emitting diode of claim 1, wherein the first material layer and the second material layer each have an optical thickness of nλ/4, where λ is a wavelength of light radiated by the active layer.
6. The led of claim 5, wherein the wavelength λ of the light emitted by the active layer is between 550nm and 950nm.
7. A light emitting diode according to any one of claims 1 to 3, wherein the first material layer is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 A P layer of a second material of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 And a P layer.
8. A light emitting diode according to any one of claims 1 to 3 wherein the first material layer has a thickness of 10nm to 20nm and the second material layer has a thickness of 20nm to 30nm.
9. A light emitting diode according to claim 1 further comprising:
the bonding layer is positioned between the substrate and the epitaxial structure and is used for bonding the epitaxial structure and the substrate;
the second reflecting structure is positioned between the bonding layer and the epitaxial structure to form a metal mirror structure;
the dielectric layer is positioned between the second reflecting structure and the epitaxial structure, a through hole is formed in the dielectric layer, and the second reflecting structure fills the through hole and is electrically connected with the P-type semiconductor layer of the epitaxial structure.
10. The light-emitting diode according to claim 1, wherein the first reflective structure is located directly below the first electrode in a stacking direction of the epitaxial structure, and a projected area of the first electrode on the substrate front surface is smaller than or equal to a projected area of the first reflective structure on the substrate front surface.
11. The light emitting diode of claim 1, wherein the N-type semiconductor layer comprises at least an N-type waveguide layer, an N-type confinement layer, an N-type window layer, and a second stop layer and an N-type ohmic contact layer stacked in order from the active layer, the first reflective structure is formed between the N-type window layer and the second stop layer, and the first electrode is formed over the N-type ohmic contact.
12. The led of claim 1, further comprising a second electrode on the back side of the substrate, the second electrode forming an electrical connection with the P-type semiconductor layer.
13. A light emitting device, comprising: a circuit substrate and at least one light emitting diode fixed to the circuit substrate, the light emitting diode comprising the light emitting diode of any one of claims 1 to 12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311278213.6A CN117317098A (en) | 2023-09-28 | 2023-09-28 | Light emitting diode and light emitting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311278213.6A CN117317098A (en) | 2023-09-28 | 2023-09-28 | Light emitting diode and light emitting device |
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| CN117317098A true CN117317098A (en) | 2023-12-29 |
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| CN202311278213.6A Pending CN117317098A (en) | 2023-09-28 | 2023-09-28 | Light emitting diode and light emitting device |
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