CN113097858B

CN113097858B - Semiconductor laser with locally thinned bottom plate

Info

Publication number: CN113097858B
Application number: CN202110645185.1A
Authority: CN
Inventors: 周少丰; 汤蒙; 胡晖
Original assignee: Shenzhen Xinghan Laser Technology Co Ltd
Current assignee: Shenzhen Xinghan Laser Technology Co Ltd
Priority date: 2021-06-10
Filing date: 2021-06-10
Publication date: 2021-08-24
Anticipated expiration: 2041-06-10
Also published as: CN113097858A

Abstract

The invention provides a semiconductor laser with a locally thinned base plate, which comprises a first light-emitting module, a second steering element, a focusing lens group and an output optical fiber, and further comprises a first step part and a second step part, wherein the base plate of a shell is provided with a horizontal plane and a groove; the second light-emitting module comprises a second shaping unit and a first steering element, the second shaping unit is arranged at a second step part, the second step part is arranged on a horizontal plane, emergent light of the second shaping unit sequentially enters the first steering element and the second steering element and then is converged into a main light path, the first light-emitting module comprises a first shaping unit and a light beam translation mirror, the first shaping unit is arranged at the first step part, the first step part is arranged in the groove, the position of the emergent surface of the light beam translation mirror is higher than the incident surface, and the emergent light of the first shaping unit passes through the light beam translation mirror and crosses the second steering element to be converged into the main light path; the light beam of the main light path passes through the focusing lens group and then enters the output optical fiber.

Description

Semiconductor laser with locally thinned bottom plate

Technical Field

The invention relates to the technical field of lasers, in particular to a semiconductor laser with a locally thinned bottom plate.

Background

The laser is a device capable of emitting laser, and a common semiconductor laser is widely applied to the fields of industrial processing, military, medical treatment, security and the like due to the advantages of high efficiency, long service life and the like. With the rapid development of fiber lasers, the demand for high-power and high-beam-quality semiconductor lasers is increasing.

Conventionally, there is a semiconductor laser in which light output from a plurality of semiconductor laser light emitting units is coupled to an optical fiber, and the plurality of semiconductor laser light emitting units are arranged in parallel inside a housing of the semiconductor laser. Therefore, as the number of semiconductor laser light emitting units is increased, the length of the semiconductor laser is increased.

In order to reduce the length of the laser, the semiconductor laser light emitting units in the semiconductor laser are generally divided into at least two oppositely disposed light emitting modules, however, because the semiconductor laser light emitting units in the same light emitting module are located in the same row or the same column, in order to ensure that the laser light emitted by each semiconductor laser light emitting unit can be emitted into the output optical fiber without being blocked, there are two solutions: a first solution is to provide a step-shaped heat sink (as shown in the first embodiment of the patent document with application number 201780006201.4), so that the semiconductor laser light emitting units in the same light emitting module are respectively located on steps with different heights, however, as the number of the semiconductor laser light emitting units in the same light emitting module increases, the highest height of the step-shaped heat sink in the same light emitting module increases, and the difference between the mutually corresponding steps between different light emitting modules increases, so that the housing height of the semiconductor laser increases; the second solution is to make the mutually corresponding step heights between different light emitting modules the same, wherein the light emitted by a light emitting module is incident into the periscope through the reflector, the light beam is translated upwards through the periscope so as to be staggered with the light emitted by the other light-emitting module in the vertical direction, as shown in the second embodiment of patent document No. 201780006201.4, however, this solution not only has a complicated optical path and requires a large number of mirrors, and the laser arrangement columns in the two light-emitting modules are equal in height and are higher than the bottom plate, so that a larger gap is formed between the laser beam with the lowest position in the laser beam array translated upwards by the periscope and the laser beam with the highest position in the laser beam array emitted by the other laser arrangement column, therefore, hollow laser spots can appear or the central energy of the laser spots is obviously lower than the peripheral energy, and the quality of output laser is seriously influenced.

Therefore, a semiconductor laser which has a small size and a simple optical path structure and can output high-quality laser light is demanded.

Disclosure of Invention

The embodiment of the invention aims to provide a semiconductor laser with a locally thinned bottom plate and a semiconductor laser, which have the advantages of small volume, simple optical path structure and capability of outputting high-quality laser.

The invention provides a semiconductor laser with a locally thinned bottom plate, which comprises a shell, a first light-emitting module, a second steering element, a focusing lens group and an output optical fiber, wherein the first light-emitting module and the second light-emitting module are positioned in the shell;

the second light-emitting module comprises a plurality of second light-emitting chips, second shaping units which correspond to the second light-emitting chips one by one and first steering elements which are positioned in the light-emitting direction of the second shaping units, the second shaping units are respectively arranged on steps with different heights of a second step part, the step height of the second shaping unit which is farther away from the first steering element is higher, the second step part is arranged on the horizontal plane, and emergent light of the second shaping units sequentially enters the first steering elements and the second steering elements and then is turned and converged into a main light path;

the first light-emitting module comprises a plurality of first light-emitting chips, first shaping units which correspond to the first light-emitting chips one by one and a light beam translation mirror which is positioned in the light-emitting direction of the first shaping units, the first shaping units are respectively arranged on steps with different heights of a first step part, the step height of the first shaping unit which is farther away from the light beam translation mirror is higher, the first step part is arranged in the groove, the emergent surface and the incident surface of the light beam translation mirror are parallel to each other, the emergent light beam of the emergent surface is higher than the incident light beam of the incident surface, and the emergent light of the first shaping units is emitted from the emergent surface after being emitted into the incident surface and passes through the second steering element to be collected into a main light path;

and the light beam of the main light path passes through the focusing lens group and then is focused to the output optical fiber.

Furthermore, the first steering element, the second steering element and the beam translation mirror are all located on the horizontal plane, a cushion block is arranged on the horizontal plane in an upward protruding mode, the focusing lens group is fixed on the cushion block, and the optical axis of the light beam on the main light path is coincident with the central axes of the focusing lens group and the output optical fiber.

Further, the semiconductor laser also comprises a third step part and a fourth step part which are arranged on the horizontal plane;

the first light-emitting chip is respectively arranged on steps with different heights of the third step part, and the optical axis of the first light-emitting chip is superposed with the central axis of the first shaping unit;

the second light-emitting chips are respectively arranged on steps with different heights of the fourth step part, and the optical axes of the second light-emitting chips are superposed with the central axis of the second shaping unit;

the second step portion is located between the groove and the third step portion, the groove is located between the second step portion and the fourth step portion, the first shaping units and the second shaping units are equal in number and are arranged in a staggered mode, and the first light-emitting chips and the second light-emitting chips are equal in number and are arranged in a staggered mode.

The light beam translation mirror is a rhombic prism and is provided with an incident surface, an emergent surface, an upper reflecting surface and a lower reflecting surface, the emergent surface is positioned above the incident surface and is parallel to the incident surface, the upper reflecting surface is connected with the upper ends of the incident surface and the emergent surface, the lower reflecting surface is connected with the lower ends of the incident surface and the emergent surface, the incident surface is perpendicular to an incident light beam, the emergent surface is perpendicular to an emergent light beam, the lower reflecting surface and the upper reflecting surface are parallel to each other, the lower end of the emergent surface and the upper end of the incident surface are at the same height, the incident light beam horizontally penetrates through the incident surface, then is reflected by the lower reflecting surface and the upper reflecting surface in sequence, and then is horizontally emitted from the emergent surface.

Furthermore, the rhombus prism has the both sides face that sets up relatively, be fixed with U type mount pad on the bottom plate of casing, U type mount pad has two vertical walls that set up relatively, thereby two vertical walls are connected respectively to the both sides face of rhombus prism so that the rhombus prism is fixed in between two vertical walls, just the lower edge of rhombus prism by the bottom sprag of U type mount pad.

The light beam translation mirror comprises a first offset prism and a second offset prism which are oppositely arranged, wherein the first offset prism is close to the first light-emitting module and is provided with a first incident surface vertical to emergent light of the first light-emitting module and a first emergent surface inclined downwards; the second deviation prism is far away from the first light-emitting module and is provided with a second incident surface which is parallel to the first emergent surface and inclines upwards and a second emergent surface which is perpendicular to emergent light of the light beam translation mirror, the first incident surface is parallel to the second emergent surface, and a gap is reserved between the first emergent surface and the second incident surface.

Furthermore, the first steering element is a pentagonal prism, a light inlet surface and a light outlet surface of the pentagonal prism are adjacently arranged and perpendicular to each other, the pentagonal prism is provided with two reflecting surfaces, an included angle between the two reflecting surfaces is 45 degrees, the two reflecting surfaces are respectively connected with the light inlet surface and the light outlet surface, the light inlet surface is located in the light outlet direction of the second shaping unit, and the light outlet surface faces the second steering element.

The invention provides another semiconductor laser with a locally thinned bottom plate, which comprises a shell, a first light-emitting module, a second steering element, a focusing lens group and an output optical fiber, wherein the first light-emitting module and the second light-emitting module are positioned in the shell, the second steering element, the focusing lens group and the output optical fiber are positioned in a main optical path, the semiconductor laser also comprises a first step part and a second step part, and the bottom plate of the shell is provided with a horizontal plane and a first groove which is downwards sunken from the horizontal plane to reduce the thickness of the bottom plate;

the first light-emitting module comprises a plurality of first light-emitting chips, first shaping units which correspond to the first light-emitting chips one by one, third steering elements which are positioned in the light-emitting directions of the first shaping units and a light beam translation mirror which is positioned in the light-emitting directions of the third steering elements, the first shaping units are respectively arranged on steps with different heights of first step parts, the step height of the first shaping unit which is farther away from the third steering elements is higher, the first step parts are arranged on the horizontal plane, the emergent surfaces and the incident surfaces of the light beam translation mirrors are parallel to each other, incident light beams of which the positions of emergent light beams of the emergent surfaces are lower than the incident surfaces are arranged, and emergent light of the first shaping units is reflected into the incident surfaces by the third steering elements, then is emitted from the emergent surfaces and is converged into a main light path through the second steering elements;

the second light-emitting module comprises a plurality of second light-emitting chips and second shaping units which correspond to the second light-emitting chips one by one, the second shaping units are respectively arranged on steps with different heights of a second step part, the step height of the second shaping unit which is farther away from the second steering element is higher, the second step part is arranged in the first groove, and emergent light of the second shaping units passes through the second steering element and directly converges into a main light path;

Further, the third turns to the component and is located the horizontal plane, still have on the bottom plate of casing certainly the horizontal plane undercut attenuate bottom plate thickness's second recess, keep apart each other between first recess and the second recess, and light beam translation mirror, second turn to component and focusing lens group and all are located in the second recess, the optical axis of light beam on the main light path coincides with the center pin of focusing lens group and output optical fiber.

The invention has the following beneficial effects:

(1) the bottom plate of the shell is provided with the groove, so that the whole height of the laser beam of the first shaping unit positioned on the first step part of the groove is reduced while the thickness of the local bottom plate is reduced, the light beam can be injected from the lower position of the incident surface of the beam translation mirror and then is emitted from the lower position of the emergent surface, the distance between the laser beam at the lowest part of the first shaping unit and the laser beam at the highest part of the second shaping unit is reduced, hollow light spots are avoided, the energy of each part of the laser light spots is as uniform as possible, and the laser output quality is improved; or the beam translation mirror enables the output beam of the first light-emitting module to move downwards in parallel, the first groove and the second groove are arranged on the bottom plate of the shell, the height of the laser beam of the second shaping unit positioned on the second step part of the first groove is reduced while the thickness of the local bottom plate is reduced, the laser beam is matched with the laser emitted by the first light-emitting module moving downwards in parallel, the height of the whole laser beam is reduced, and meanwhile, the distance between the uppermost laser beam of the first shaping unit and the lowermost laser beam of the second shaping unit is reduced, so that the laser output quality is improved.

(2) Through the mutual matching of the groove and the beam translation mirror, the height of the position of the highest step of the corresponding step part and the height of the position of the highest point of the beam translation mirror can be effectively reduced, so that the height of the shell can be reduced, and the volume of the laser can be effectively reduced.

Drawings

Fig. 1 is a perspective view of a semiconductor laser device in accordance with embodiment 1 of the present invention, in which a bottom plate is partially thinned;

fig. 2 is a top view of a semiconductor laser in embodiment 1 with a partially thinned bottom plate according to the present invention;

FIG. 3 is a cross-sectional view of FIG. 2 taken in the direction A-A;

fig. 4 is a schematic perspective view of an optical path of embodiment 1 of a semiconductor laser with a partially thinned bottom plate according to the present invention;

fig. 5 is a perspective view of a first beam translation mirror in embodiment 1 of a semiconductor laser device with a locally thinned bottom plate according to the present invention;

fig. 6 is a perspective view of a second beam translation mirror in embodiment 1 of a semiconductor laser with a locally thinned bottom plate according to the present invention;

FIG. 7 is a schematic view of a first steering element;

fig. 8 is a perspective view of a semiconductor laser embodiment 2 with a partially thinned bottom plate according to the present invention;

fig. 9 is a perspective view of a first beam translation mirror in embodiment 2 of a semiconductor laser device with a locally thinned bottom plate according to the present invention;

fig. 10 is a perspective view of a second beam translation mirror in embodiment 2 of a semiconductor laser having a locally thinned bottom plate according to the present invention;

in the figure:

1. a first light-emitting module;

11. a first light emitting chip; 12. a first shaping unit; 121. a second slow axis collimating mirror; 122. a second reflector;

2. a second light emitting module;

21. a second light emitting chip; 22. a second shaping unit; 221. a second slow axis collimating mirror; 222. a second reflector;

3. a second steering element; 4. A focusing lens group; 5. an output optical fiber; 61. a first step portion; 62. a second step section; 63. a third step portion; 64. a fourth step portion;

7. a first steering element; 71. a light inlet surface; 72. a light-emitting surface; 73. a light-reflecting surface;

8. a base plate; 81. a horizontal plane; 82. a groove; 83. a first groove; 84. a second groove; 85. cushion blocks; 86. a U-shaped mounting seat;

9. a beam translation mirror; 91. an incident surface; 92. an exit surface; 93. an upper reflective surface; 94. a lower reflective surface; 95. a first offset prism; 951. a first incident surface; 952. a first exit surface; 96. a second offset prism; 961. a second incident surface; 962. a second exit surface; 14. a third diverting element.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described with reference to the accompanying drawings.

Referring to fig. 1 to 10, the present invention provides a semiconductor laser with a locally thinned bottom plate, wherein a groove structure is provided to locally thin a bottom plate of a housing, and the groove structure is matched with a beam translation mirror capable of translating a beam in an up-down direction to reduce the overall height of the housing, and a gap between beams emitted by different light emitting modules is smaller when the beams are combined, so that the purpose of uniform energy at each position of output laser is achieved, and the output quality of the laser is improved.

Example 1

Referring to fig. 1 to 7, the semiconductor laser according to embodiment 1 includes a housing, a first light emitting module 1, a second light emitting module 2, a second turning element 3 located in a main optical path, a focusing lens group 4, and an output optical fiber 5, and further includes a first step portion 61 and a second step portion 62.

Referring to fig. 1 to fig. 3, the bottom plate 8 of the housing has a horizontal surface 81 and a groove 82 (as shown in fig. 3) recessed downward from the horizontal surface 81 to reduce the thickness of the bottom plate 8, i.e., the thickness of the bottom plate 8 corresponding to the horizontal surface 81 is greater than the thickness of the bottom plate 8 corresponding to the groove 82.

Referring to fig. 1, the second light emitting module 2 includes a plurality of second light emitting chips 21, second shaping units 22 corresponding to the second light emitting chips 21 one by one, and first turning elements 7 located in the light emitting direction of the second shaping units 22, where the second shaping units 22 are respectively disposed on steps of the second step portions 62 with different heights, and the height of the step where the second shaping unit 22 located farther from the first turning element 7 is higher, the height difference between any two adjacent steps in the second step portions 62 is equal, and is Δ h. The second step portion 62 is disposed on the horizontal plane 81, and a lowest step in the second step portion 62 is higher than the horizontal plane 81. The second shaping unit 22 includes a second slow axis collimating mirror 221 and a second reflecting mirror 222, which are in one-to-one correspondence with the second light emitting chip 21, the second slow axis collimating mirror 221 is configured to collimate the laser light emitted by the second laser chip 21 in the slow axis direction, the second reflecting mirror 222 is configured to reflect the collimated laser light beam to the first steering element 7, and the light beam is turned after reaching the first steering element 7, is incident on the second steering element 3, is turned again by the second steering element 3, and then is merged into the main light path.

Referring to fig. 2, the first light-emitting module 1 includes a plurality of first light-emitting chips 11, first shaping units 12 corresponding to the first light-emitting chips 11 one by one, and a light beam translation mirror 9 located in a light-emitting direction of the first shaping units 12, where the first shaping units 12 are respectively disposed on steps of the first step portion 61 with different heights, and the height of the step where the first shaping unit 12 located farther from the light beam translation mirror 9 is higher, and the height difference between any two adjacent steps in the first step portion 61 is equal, and is Δ h. The first step portion 61 is arranged in the groove 82, the first step portion 61 and the second step portion 62 have the same number of steps, the number of the steps is N, N is an integer greater than 0, the height difference between the steps in the first step portion 61 and the corresponding steps in the second step portion 62 is N × Δ h, N is an integer greater than 0 and less than N, and preferably N = 2.

Referring to fig. 2 and 4, the exit surface 92 and the entrance surface 91 of the beam translation mirror 9 are parallel to each other, and the position of the exit beam of the exit surface 92 is higher than the incident beam of the entrance surface 91, the first shaping unit 12 includes a first slow axis collimator 121 and a first reflector 122 that are in one-to-one correspondence with the first light emitting chip 11, the first slow axis collimator 121 is configured to collimate the laser light emitted by the first laser chip 11 in the slow axis direction, the first reflector 122 is configured to reflect the collimated laser beam to the entrance surface 91, and the beam after being emitted from the exit surface 92 passes through the second turning element 3 and then is merged into the main optical path.

Specifically, the beam translation mirror 9 may have a plurality of different structures, and two of the structures are described below with emphasis, and one of the structures is selected when in use:

referring to fig. 5, structure one: the light beam translation mirror 9 is a rhombic prism, and has an incident surface 91, an emergent surface 92 which is positioned above the incident surface 91 and is parallel to the incident surface 91, an upper reflecting surface 93 which is connected with the upper ends of the incident surface 91 and the emergent surface 92, and a lower reflecting surface 94 which is connected with the lower ends of the incident surface 91 and the emergent surface 92, wherein the incident surface 91 is perpendicular to an incident light beam, the emergent surface 92 is perpendicular to an emergent light beam, the lower reflecting surface 94 and the upper reflecting surface 93 are parallel to each other, the lower end of the emergent surface 92 and the upper end of the incident surface 91 are at the same height, the incident light beam horizontally penetrates through the incident surface 91, then is reflected by the lower reflecting surface 94 and the upper reflecting surface 93, and then is horizontally emitted from the emergent surface 92, so that the emergent light beam is higher than the incident light beam.

Referring to fig. 1, the diamond prism has two opposite side surfaces, a U-shaped mounting seat is fixed on a bottom plate 8 of the housing, the U-shaped mounting seat has two opposite vertical walls, the two side surfaces of the diamond prism are respectively connected to the two vertical walls so that the diamond prism is fixed between the two vertical walls, and the lower edge of the diamond prism is supported by a horizontal surface 81 of the U-shaped mounting seat 86.

Referring to fig. 6, structure two: the beam translation mirror 9 comprises a first shift prism 95 and a second shift prism 96 which are oppositely arranged, wherein the first shift prism 95 is close to the first light-emitting module 1 and is provided with a first incident surface 951 which is perpendicular to the light emitted by the first light-emitting module 1 and a first emergent surface 952 which is inclined downwards; the second shift prism 96 is separated from the first light emitting module 1, and has a second incident surface 961 parallel to the first exit surface 952 and inclined upward and a second exit surface 962 perpendicular to the light emitted from the beam translation mirror, the first incident surface 951 is parallel to the second exit surface 962, and a gap is formed between the first exit surface 952 and the second incident surface 961. By using the principle of optical refraction, the outgoing light of the first light-emitting module 1 will be refracted when passing through the first incident surface 951 and then being emitted through the first exit surface 952, because the refractive index of the first shift prism 95 is greater than that of air, the outgoing light will be deflected upward and then enter the second incident surface 961, because the refractive index of the second shift prism 96 is greater than that of air, the refractive index of the first shift prism 95 is equal to that of the second shift prism 96, and when passing through the second incident surface 961, the light beam will be deflected downward and parallel to the light beam initially entering the first shift prism 95, so that the outgoing light will be translated upward by a certain distance relative to the incident light, and the upward translation distance is proportional to the gap distance between the first exit surface 952 and the second incident surface 961.

Referring to fig. 1 to 3, in embodiment 1, the first steering element 7, the second steering element 3 and the beam translation mirror 9 are all located on the horizontal plane 81, so that the light beam of the first light emitting module 1 can enter from a lower position of an incident plane 91 of the beam translation mirror 9 (see fig. 5 and 6), and then exit from a lower position of the exit plane 92, thereby reducing a distance between the laser beam at the lowest position of the first shaping unit 12 and the laser beam at the highest position of the second shaping unit 22, avoiding the occurrence of hollow spots, making energy of each laser spot as uniform as possible, and improving laser output quality.

Referring to fig. 1 and 4, a pad 85 is convexly disposed upward from the horizontal plane 81, the focusing lens group 4 is fixed to the pad 85, an optical axis of a light beam on the main light path coincides with central axes of the focusing lens group 4 and the output optical fiber 5, and the light beam on the main light path passes through the focusing lens group 4 and is focused on the output optical fiber 5.

Referring to fig. 1 and fig. 3, the semiconductor laser further includes a third step 63 and a fourth step 64 disposed on the horizontal plane 81, the first light emitting chip 11 is disposed on steps of different heights of the third step 63, an optical axis of the first light emitting chip 11 coincides with a central axis of the first shaping unit 12, and height differences between any two adjacent steps in the third step 63 are equal to each other, and are Δ h. The second light emitting chips 22 are respectively arranged on the steps with different heights of the fourth step part 64, the optical axis of the second light emitting chip 21 is overlapped with the central axis of the second shaping unit 22, and the height difference between any two adjacent steps in the fourth step part 64 is equal and is delta h.

The second step portion 62 is located between the groove 82 and the third step portion 63, the groove 82 is located between the second step portion 62 and the fourth step portion 64, the first shaping unit 12 and the second shaping unit 22 are equal in number and are arranged in a staggered manner, and the first light emitting chip 11 and the second light emitting chip 12 are equal in number and are arranged in a staggered manner. By means of the staggered arrangement, the distribution density of the light-emitting chips is increased, and therefore the output power of the laser is improved.

The first step portion 61, the second step portion 62, the third step portion 63, and the fourth step portion 64 are all integrally formed with the housing.

Referring to fig. 1 and 7, in embodiment 1, the first turning element 7 is a pentagonal prism, a light entrance surface 71 and a light exit surface 72 of the pentagonal prism are adjacently disposed and perpendicular to each other, the pentagonal prism has two light reflection surfaces 73, an included angle between the two light reflection surfaces 73 is 45 °, the two light reflection surfaces 73 are respectively connected to the light entrance surface 71 and the light exit surface 72, the light entrance surface 71 is located in a light exit direction of the second shaping unit 22, the light exit surface 72 faces the second turning element 3, and side lengths of the light entrance surface 71, the light exit surface 72 and the light reflection surfaces 73 are equal to each other and are all d. By using the pentagonal prism, light beams enter the light inlet face 71 at any angle, emergent light can be emitted from the light outlet face 72 at an angle of 90 degrees with incident light, so that the process difficulty in laser assembly is reduced due to no need of precise angle adjustment of the first steering element 7, and the production efficiency and the yield can be greatly improved.

Example 2

Referring to fig. 8 to 10, the semiconductor laser according to embodiment 2 includes a housing, a first light emitting module 1, a second light emitting module 2, a second turning element 3 located in a main optical path, a focusing lens group 4, and an output optical fiber 5, and further includes a first step portion 61 and a second step portion 62.

Referring to fig. 8, the bottom plate 8 of the housing has a horizontal surface 81 and a first groove 83 and a second groove 84 recessed downward from the horizontal surface 81 to reduce the thickness of the bottom plate 8, the thickness of the bottom plate 8 corresponding to the horizontal surface 81 is greater than the thickness of the bottom plate 8 corresponding to the first groove 83 and the second groove 84, and the first groove 83 and the second groove 84 may be spaced from each other or may be communicated with each other.

The first light-emitting module 1 comprises a plurality of first light-emitting chips 11, first shaping units 12 corresponding to the first light-emitting chips 11 one by one, third turning elements 14 located in the light-emitting direction of the first shaping units 12, and beam translation mirrors 9 located in the light-emitting direction of the third turning elements 14.

The first shaping unit 11 is disposed on the steps of the first step portion 61 with different heights, and the height of the step where the first shaping unit 12 located farther away from the third steering element 14 is located is higher, and the height difference between any two adjacent steps in the first step portion 61 is equal, and is Δ h. The first step part 61 and the third turning element 14 are both arranged on the horizontal plane 81, the beam translation mirror 9 is arranged in the second groove 83, the exit plane 92 and the incident plane 91 of the beam translation mirror 9 are parallel to each other, and the position of the exit beam of the exit plane 92 is lower than the incident beam of the incident plane 91. The exit surface 92 and the entrance surface 91 of the beam shifting mirror 9 are parallel to each other, the exit light of the first shaping unit 12 enters the third turning element 14 and is turned by the third turning element 9 to enter the entrance surface 91 of the beam shifting mirror 9, after passing through the beam shifting mirror 9, the light beam is emitted from the exit surface of the beam shifting mirror 9 to the second turning element 3, and after being turned by the second turning element 3, the light beam is collected into the main optical path.

Specifically, the beam translation mirror can have a plurality of different structures, two of which are described below with emphasis, and one of the two structures is selected when the beam translation mirror is used:

referring to fig. 9, structure one: the light beam translation mirror 9 is a rhombic prism, and has an incident surface 91, an emergent surface 92 which is positioned below the incident surface 91 and is parallel to the incident surface 91, an upper reflecting surface 93 which is connected with the upper ends of the incident surface 91 and the emergent surface 92, and a lower reflecting surface 94 which is connected with the lower ends of the incident surface 91 and the emergent surface 92, wherein the incident surface 91 is perpendicular to the incident light beam, the emergent surface 92 is perpendicular to the emergent light beam, the lower reflecting surface 94 and the upper reflecting surface 93 are parallel to each other, the upper end of the emergent surface 92 and the lower end of the incident surface 91 are at the same height, the incident light beam horizontally penetrates through the incident surface 91 and then is reflected by the upper reflecting surface 93 and the lower reflecting surface 94, and then horizontally exits from the emergent surface 92, so that the emergent light beam is lower than the incident light beam.

Referring to fig. 10, structure two: the beam translation mirror 9 comprises a first shift prism 95 and a second shift prism 96 which are oppositely arranged, wherein the first shift prism 95 is close to the first light-emitting module 1 and is provided with a first incident surface 951 which is perpendicular to light emitted by the first light-emitting module 1 and a first emergent surface 952 which inclines upwards; the second shift prism 96 is separated from the first light-emitting module 1, and has a second incident surface 961 parallel to the first exit surface 952 and inclined downward, and a second exit surface 962 perpendicular to the light emitted from the beam translation mirror 9, wherein the first incident surface 951 is parallel to the second exit surface 962, and a gap is formed between the first exit surface 952 and the second incident surface 961. By using the principle of optical refraction, the outgoing light of the first light-emitting module 1 will be refracted when passing through the first incident surface 951 and then being emitted through the first exit surface 952, because the refractive index of the first shift prism 95 is greater than that of air, the outgoing light will be deflected downward and then enter the second incident surface 961, because the refractive index of the second shift prism 96 is greater than that of air, the refractive index of the first shift prism 95 is equal to that of the second shift prism 96, and when passing through the second incident surface 961, the light beam will be deflected upward and parallel to the light beam initially entering the first shift prism 95, so that the outgoing light will be translated downward at a certain distance relative to the incident light, and the downward translation distance is proportional to the gap distance between the first exit surface 952 and the second incident surface 961.

The second light emitting module 2 includes a plurality of second light emitting chips 11 and second shaping units 12 corresponding to the second light emitting chips 11 one by one, the second shaping units 12 are respectively disposed on steps of different heights of the second step portion 62, the step height of the second shaping unit 22 located farther from the second turning element 3 is higher, and the height difference between any two adjacent steps in the second step portion 62 is equal and is Δ h. The second step portion 62 is disposed in the first groove 83, and the light emitted from the second shaping unit 22 passes through the second turning element 3 and directly enters the main light path. The first step part 61 and the second step part 62 have the same number of steps, the number is N, N is an integer greater than 0, the height difference between the steps in the first step part 61 and the steps in the second step part 62 corresponding to each other is N × Δ h, N is an integer greater than 0 and less than N, and preferably N = 2.

The second turning element 3 and the focusing lens group 4 are both located in the second recess 84, and the optical axis of the light beam on the main light path coincides with the central axes of the focusing lens group 4 and the output optical fiber 5. The light beam of the main light path passes through the focusing lens group 4 and is focused to the output optical fiber 5.

The semiconductor laser further comprises a third step part 63 and a fourth step part 64 which are arranged on the horizontal plane 81, the first light-emitting chip 11 is respectively arranged on steps with different heights of the third step part 63, the optical axis of the first light-emitting chip 11 is overlapped with the central axis of the first shaping unit 12, and the height difference between any two adjacent steps in the third step part 63 is equal to delta h. The second light emitting chips 22 are respectively arranged on the steps with different heights of the fourth step part 64, the optical axis of the second light emitting chip 21 is overlapped with the central axis of the second shaping unit 22, and the height difference between any two adjacent steps in the fourth step part 64 is equal and is delta h.

The grooves 82 are located between the first step portions 61 and the third step portions 63, the first step portions 61 are located between the grooves 82 and the fourth step portions 64, the first shaping units 12 and the second shaping units 22 are equal in number and are arranged in a staggered manner, and the first light emitting chips 11 and the second light emitting chips 12 are equal in number and are arranged in a staggered manner.

In this document, the terms front, back, upper and lower are used to define the components in the drawings and the positions of the components relative to each other, and are used for clarity and convenience of the technical solution. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims.

The features of the embodiments and embodiments described herein above may be combined with each other without conflict.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims

1. The utility model provides a semiconductor laser of local attenuate of bottom plate which characterized in that: the optical fiber focusing device comprises a shell, a first light-emitting module, a second steering element, a focusing lens group and an output optical fiber, wherein the first light-emitting module and the second light-emitting module are positioned in the shell, the second steering element, the focusing lens group and the output optical fiber are positioned in a main optical path, the optical fiber focusing device also comprises a first step part and a second step part, and a bottom plate of the shell is provided with a horizontal plane and a groove which is downwards sunken from the horizontal plane to reduce the thickness of the bottom plate;

2. A partially thinned semiconductor laser of claim 1 wherein: the first steering element, the second steering element and the beam translation mirror are all located on the horizontal plane, a cushion block is arranged on the horizontal plane in an upward protruding mode, the focusing lens group is fixed on the cushion block, and the optical axis of a beam on the main light path is coincident with the central axes of the focusing lens group and the output optical fiber.

3. A partially thinned semiconductor laser of claim 2 wherein: the semiconductor laser also comprises a third step part and a fourth step part which are arranged on the horizontal plane;

4. A partially thinned semiconductor laser of claim 2 wherein: the light beam translation mirror is a rhombic prism and is provided with an incident surface, an emergent surface, an upper reflecting surface and a lower reflecting surface, the emergent surface is positioned above the incident surface and is parallel to the incident surface, the upper reflecting surface is connected with the upper ends of the incident surface and the emergent surface, the lower reflecting surface is connected with the lower ends of the incident surface and the emergent surface, the incident surface is perpendicular to an incident light beam, the emergent surface is perpendicular to an emergent light beam, the lower reflecting surface and the upper reflecting surface are parallel to each other, the lower end of the emergent surface and the upper end of the incident surface are at the same height, the incident light beam horizontally penetrates through the incident surface, then is reflected by the lower reflecting surface and the upper reflecting surface in sequence, and then is horizontally emitted from the emergent surface.

5. A partially thinned semiconductor laser of claim 4 wherein: the diamond prism has the both sides face that sets up relatively, be fixed with U type mount pad on the bottom plate of casing, U type mount pad has two vertical walls that set up relatively, thereby two vertical walls are connected respectively to diamond prism's both sides face makes diamond prism be fixed in between two vertical walls, just diamond prism's lower edge quilt the bottom sprag of U type mount pad.

6. A partially thinned semiconductor laser of claim 2 wherein: the light beam translation mirror comprises a first offset prism and a second offset prism which are oppositely arranged, the first offset prism is close to the first light-emitting module and is provided with a first incident surface vertical to emergent light of the first light-emitting module and a first emergent surface inclined downwards; the second deviation prism is far away from the first light-emitting module and is provided with a second incident surface which is parallel to the first emergent surface and inclines upwards and a second emergent surface which is perpendicular to emergent light of the light beam translation mirror, the first incident surface is parallel to the second emergent surface, and a gap is reserved between the first emergent surface and the second incident surface.

7. A partially thinned semiconductor laser of claim 2 wherein: the first steering element is a pentagonal prism, a light inlet surface and a light outlet surface of the pentagonal prism are adjacently arranged and perpendicular to each other, the pentagonal prism is provided with two reflecting surfaces, an included angle between the two reflecting surfaces is 45 degrees, the two reflecting surfaces are respectively connected with the light inlet surface and the light outlet surface, the light inlet surface is located in the light outlet direction of the second shaping unit, and the light outlet surface faces the second steering element.

8. The utility model provides a semiconductor laser of local attenuate of bottom plate which characterized in that: the optical fiber focusing device comprises a shell, a first light-emitting module, a second steering element, a focusing lens group and an output optical fiber, wherein the first light-emitting module and the second light-emitting module are positioned in the shell, the second steering element, the focusing lens group and the output optical fiber are positioned in a main optical path, the optical fiber focusing device also comprises a first step part and a second step part, and a bottom plate of the shell is provided with a horizontal plane and a first groove which is downwards sunken from the horizontal plane to reduce the thickness of the bottom plate;

9. A partially thinned semiconductor laser of claim 8 wherein: the third turns to the component and is located the horizontal plane, still have on the bottom plate of casing certainly the horizontal plane undercut attenuate bottom plate thickness's second recess, keep apart each other between first recess and the second recess, and light beam translation mirror, second turn to component and focusing lens group and all are located in the second recess, the optical axis of light beam and focusing lens group and the center pin coincidence of output optical fiber on the main light path.