CN113097071A - 一种石墨烯场效应晶体管的钝化方法 - Google Patents
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Abstract
本发明公开了一种石墨烯场效应晶体管的钝化方法,使用电子束负胶对栅极进行保护,再旋涂、固化BCB进行钝化处理,具体制作步骤如下:(1)在石墨烯晶体管表面涂上一层电子束负胶;(2)使用电子束工艺在栅极金属上曝光,显影后留下负胶包裹栅极与衬底石墨烯;(3)在石墨烯晶体管表面旋涂BCB保护层,再进行BCB保护层固化;(4)在BCB表面旋涂光刻胶,曝光显影;(5)保留晶体管管芯上的BCB保护层,干法刻蚀去除其他区域的BCB保护层,完成晶体管钝化过程。本发明使用电子束负胶工艺覆盖栅极表面,隔离栅极与空气接触,保护沟道区石墨烯;制作钝化保护层,解决了石墨烯场效应晶体管钝化后的性能退化问题。
Description
技术领域
本发明涉及场效应晶体管的钝化方法,尤其涉及一种石墨烯场效应晶体管的钝化方法。
背景技术
在电路应用中,现有的场效应晶体管制备完成后需要进行钝化保护,用来保证晶体管的稳定性以及避免后续工艺对晶体管的结构造成损伤,一般是生长一层介质层作为钝化保护层,常见为SiO2,SiNX介质等。但是,对于石墨烯场效应晶体管来说,因为石墨烯是表面材料,暴露在衬底表面,通常生长介质层的钝化方法对暴露的石墨烯的损伤非常大,钝化后器件漏极电流Id下降非常明显,至少下降50%以上,特征频率fT、最大振荡频率fMAX下降也非常明显。
发明内容
发明目的:本发明的目的是提供一种使用电子束负胶覆盖栅极表面的石墨烯场效应管的钝化方法。
技术方案:本发明的钝化方法,使用电子束负胶对栅极进行保护,再旋涂、固化BCB进行钝化处理,具体制作步骤如下:
(s1)在石墨烯场效应晶体管表面涂上一层电子束负胶;
(s2)使用电子束工艺在栅极金属上曝光,显影后留下负胶包裹栅极、衬底和石墨烯;
(s3)在石墨烯场效应晶体管表面旋涂BCB保护层,再进行BCB保护层固化;
(s4)在BCB保护层表面旋涂光刻胶,曝光显影;
(s5)保留石墨烯场效应晶体管管芯上的BCB保护层,干法刻蚀去除其他区域的BCB保护层,完成石墨烯场效应晶体管钝化过程。
进一步,所述步骤(s1)中,所述电子束负胶的厚度根据栅极金属厚度选择,电子束负胶厚度为500nm-2um,烘胶温度90-130℃,时间1-5min。
进一步,所述步骤(s2)中,所述栅极金属上曝光区域根据栅极与沟道区域确定,曝光宽度在100nm-10um之间。
进一步,所述步骤(s3)中,旋涂BCB保护层的厚度根据石墨烯场效应晶体管表面高度起伏决定,BCB保护层的厚度在1um-10um之间,固化温度在180-250℃之间,固化时间为2h-10h。
进一步,所述步骤(s5)中,所述干法刻蚀气体选用SF6,或CF4,或Cl2,干法刻蚀时间为5min-30min。
本发明与现有技术相比,其显著效果如下:1、使用电子束负胶工艺覆盖栅极表面,隔离栅极与空气的接触,保护沟道区石墨烯;2、在样品表面旋涂BCB,利用BCB的稳定特性作为钝化保护层;3、与现有工艺兼容,解决了石墨烯场效应晶体管钝化后的性能退化问题,能应用于电路工艺中。
附图说明
图1为本发明的石墨烯场效应晶体管结构图;
图2为本发明的电子束负胶保护栅极与石墨烯沟道图;
图3为本发明的BCB钝化保护晶体管图。
具体实施方式
下面结合说明书附图和具体实施方式对本发明做进一步详细描述。
本发明的钝化方法,包括使用电子束负胶6对栅极5进行保护,再旋涂、固化BCB(Benzocyclobutene苯并环丁烯,一种高性能聚合物,具有优良的热稳定性、化学稳定性,电绝缘性和机械强度)保护层7,再采用光刻显影以及干法刻蚀技术去除多余BCB保护层7,完成石墨烯晶体管钝化保护。
如图1所示为石墨烯场效应晶体管结构(钝化工艺处理之前),包括衬底1、石墨烯2、漏极3、源极4和栅极5。
(一)实现方法
具体步骤如下:
s1)在石墨烯场效应晶体管表面上涂一层电子束负胶6,电子束负胶6的厚度根据栅极金属厚度选择,电子束负胶6的厚度为500nm-2um,烘胶温度90-130℃,时间1-5min;如图2所示。
s2)使用电子束工艺在栅极5金属上曝光,根据栅极5与沟道区域确定曝光区域,显影后留下电子束负胶6保护栅极5金属。
s3)在石墨烯场效应晶体管表面上旋涂BCB保护层7,旋涂BCB保护层7的厚度为1um-4um,固化温度在180-250℃之间,固化后作为钝化保护层。
s4)在BCB保护层7的表面上旋涂光刻胶,光刻胶可以选用7908或701等,光刻胶的厚度为1um-4um,曝光显影,留下石墨烯场效应晶体管管芯上的BCB保护层7。
s5)干法刻蚀去除其他区域的BCB保护层7,完成石墨烯场效应晶体管钝化过程;如图3所示。
(二)制作工艺
具体制作工艺步骤如下:
1)在Si/SiO2衬底1上完成的石墨烯场效应晶体管,栅长200nm,沟道宽度400nm,栅极5的金属厚度500nm,在石墨烯晶体管表面涂上一层电子束负胶6的型号为AR-N,电子束负胶6的厚度900nm;
2)使用电子束工艺在栅极5金属上曝光,根据栅极5与沟道区域确定曝光区域400nm,显影后留下宽400nm、高900nm,电子束负胶6保护栅极5的金属层;
3)在石墨烯场效应晶体管表面上旋涂BCB保护层7,旋涂BCB保护层7的厚度为2um,固化温度为200℃,固化时间为2小时,固化后作为钝化保护层;
4)在BCB保护层7的表面上旋涂光刻胶,光刻胶选用701,光刻胶厚度为2um,曝光显影,留下石墨烯场效应晶体管管芯上的BCB保护层7;
5)干法刻蚀,采用SF6气体刻蚀去除其他区域的BCB保护层7,完成石墨烯场效应晶体管钝化过程。
Claims (5)
1.一种石墨烯场效应晶体管的钝化方法,其特征在于,使用电子束负胶对栅极进行保护,再旋涂、固化BCB保护层进行钝化处理,具体制作步骤如下:
(s1)在石墨烯场效应晶体管表面涂上一层电子束负胶;
(s2)使用电子束工艺在栅极金属上曝光,显影后留下负胶包裹栅极、衬底和石墨烯;
(s3)在石墨烯场效应晶体管表面旋涂BCB保护层,再进行BCB保护层固化;
(s4)在BCB保护层表面旋涂光刻胶,曝光显影;
(s5)保留石墨烯场效应晶体管管芯上的BCB保护层,干法刻蚀去除其他区域的BCB保护层,完成石墨烯场效应晶体管钝化过程。
2.根据权利要求1所述的石墨烯场效应晶体管的钝化方法,其特征在于:所述步骤(s1)中,所述电子束负胶的厚度根据栅极金属厚度选择,电子束负胶厚度为500nm-2um,烘胶温度为90-130℃,时间为1-5min。
3.根据权利要求1所述的石墨烯场效应晶体管的钝化方法,其特征在于:所述步骤(s2)中,所述栅极金属上曝光区域根据栅极与沟道区域确定,曝光宽度在100nm-10um之间。
4.根据权利要求1所述的石墨烯场效应晶体管的钝化方法,其特征在于:所述步骤(s3)中,旋涂BCB保护层的厚度根据石墨烯场效应晶体管表面高度起伏决定,BCB保护层的厚度在1um-10um之间,固化温度在180-250℃之间,固化时间为2-10h。
5.根据权利要求1所述的石墨烯场效应晶体管的钝化方法,其特征在于:所述步骤(s5)中,所述干法刻蚀气体选用SF6,或CF4,或Cl2,干法刻蚀时间为5min-30min。
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CN104362092A (zh) * | 2014-10-11 | 2015-02-18 | 中国科学院微电子研究所 | 一种采用自对准工艺制作石墨烯场效应晶体管器件的方法 |
CN104465400A (zh) * | 2014-12-11 | 2015-03-25 | 中国科学院微电子研究所 | 无残留光学光刻胶石墨烯fet的制备及原位表征方法 |
CN112415653A (zh) * | 2020-10-22 | 2021-02-26 | 中国电子科技集团公司第五十五研究所 | 一种硅基光波导和石墨烯光电混频器集成芯片与制备方法 |
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CN104362092A (zh) * | 2014-10-11 | 2015-02-18 | 中国科学院微电子研究所 | 一种采用自对准工艺制作石墨烯场效应晶体管器件的方法 |
CN104465400A (zh) * | 2014-12-11 | 2015-03-25 | 中国科学院微电子研究所 | 无残留光学光刻胶石墨烯fet的制备及原位表征方法 |
CN112415653A (zh) * | 2020-10-22 | 2021-02-26 | 中国电子科技集团公司第五十五研究所 | 一种硅基光波导和石墨烯光电混频器集成芯片与制备方法 |
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