CN113078252B - Packaging method of LED chip - Google Patents
Packaging method of LED chip Download PDFInfo
- Publication number
- CN113078252B CN113078252B CN202110288226.6A CN202110288226A CN113078252B CN 113078252 B CN113078252 B CN 113078252B CN 202110288226 A CN202110288226 A CN 202110288226A CN 113078252 B CN113078252 B CN 113078252B
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- bonding pad
- mold
- led chip
- die
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 21
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 230000020169 heat generation Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000011324 bead Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a packaging method of an LED chip, which comprises the following steps: 1. providing a bonding pad; 2. mounting a wafer in a half-side region of the pad; 3. mounting a gluing mold on the bonding pad, covering the wafer and the periphery by the mold in a half-side area of the bonding pad, and then coating die bonding glue on the bonding pad on the mold, wherein a mounting vacant area of the die bonding glue is covered by the mold in the half-side area of the bonding pad; 4. the mold is removed. The LED chip packaging structure has good structural strength, can reduce power consumption and heat generation, and has good effect in practical application.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a packaging method of an LED chip.
Background
An LED (light emitting diode) chip is a solid-state semiconductor device that can directly convert electricity into light. The heart of the LED is a semiconductor wafer, one end of the wafer is attached to a support, the other end of the wafer is a cathode, the other end of the wafer is connected with an anode of a power supply, the whole wafer is packaged by epoxy resin, the LED support and a bottom base of an LED lamp bead before packaging fix the chip on the basis of the LED support, the anode and the cathode are welded, and the chip is fixed and formed by using crystal fixing glue at one time.
In current LED light-emitting lamp pearl, all account for the majority area of lamp pearl after the LED chip encapsulation, big lamp pearl about has big light-emitting area, just as current SMD series generally name with the size, for example 2835 lamp pearl size length width is 2.8mm, 3.5mm and 0.8mm respectively, 3514 lamp pearl is exactly volume and light-emitting area about only half of 2835 lamp pearl, appear in the practical application that less lamp pearl is difficult for harmless installation and can only use great lamp pearl to replace, but the power consumption with generate heat the too high condition again, consequently need improve the packaging method to the LED chip, in order to satisfy the demand.
Disclosure of Invention
The purpose of the invention is: the packaging method of the LED chip is provided, and the LED lamp bead which is convenient to install and apply, and capable of reducing power consumption and has a better heating effect is manufactured.
In order to solve the technical problem, the invention provides a packaging method of an LED chip.
A packaging method of an LED chip comprises the following steps:
1. providing a bonding pad;
2. mounting a wafer in a half-side region of the pad;
3. mounting a gluing mold on the bonding pad, covering the wafer and the periphery by the mold in a half-side area of the bonding pad, and then coating die bonding glue on the bonding pad on the mold, wherein a mounting vacant area of the die bonding glue is covered by the mold in the half-side area of the bonding pad;
4. the mold is removed.
As a preferable aspect of the present invention, in the third step, the mold covers the other half area of the pad, and after the die attach adhesive is applied, the covered area is a hollow area of the die attach adhesive.
As a preferable scheme of the invention, in the third step, the covering shape of the mold in the other half area of the bonding pad is a rhombus, and after the die attach adhesive is coated, the hollow-out area is rhombus.
As a preferable aspect of the present invention, in the third step, the covering shape of the mold in the other half area of the pad is an ellipse, and after the die attach adhesive is applied, the hollow area is an ellipse.
In a preferable mode of the invention, in the third step, the covering shape of the die in the other half area of the bonding pad is hourglass-shaped, and after the die bonding glue is coated, the hollowed-out area is hourglass-shaped.
As a preferable aspect of the present invention, in the first step, the pad is aluminized on the back surface.
As a preferable embodiment of the present invention, in the third step, the die bond adhesive is an epoxy resin.
As a preferable aspect of the present invention, in the first step, a first electrode plate and a second electrode plate are provided on the pad in a spaced manner, and in the second step, the wafer is mounted on the first electrode plate in a half-side region of the pad, the first electrode of the wafer is electrically connected to the first electrode plate, and the second electrode of the wafer is electrically connected to a half-side region of the second electrode plate on the same side as the first electrode plate by gold wires.
In a preferred embodiment of the present invention, in the first step, the first electrode plate is larger than the second electrode plate.
As a preferable aspect of the present invention, in the fourth step, an encapsulation adhesive is poured into the mounting hollowed-out area.
Compared with the prior art, the LED chip packaging method has the beneficial effects that: the LED chip packaging structure has good structural strength, can reduce power consumption and heat generation, and has good effect in practical application.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of an LED chip package according to the present invention;
FIG. 2 is a schematic structural diagram of another LED chip package embodiment implemented by the present invention;
FIG. 3 is a schematic structural diagram of another embodiment of an LED chip package in accordance with the present invention;
in the figure, 1, pad; 11. a first electrode plate; 12. a second polar plate; 2. die bonding glue; 21. installing a hollowed-out area; 22. a hollow-out area; 3. a wafer.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that the terms "mounted," "connected," and "connected" are used broadly and are defined as, for example, either fixedly connected, detachably connected, or integrally connected, unless otherwise explicitly stated or limited; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it is to be further understood that the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the machine or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. It should be understood that the terms "first", "second", etc. are used herein to describe various information, but the information should not be limited to these terms, which are only used to distinguish one type of information from another. For example, "first" information may also be referred to as "second" information, and similarly, "second" information may also be referred to as "first" information, without departing from the scope of the present invention.
Referring to fig. 1 or 2, a method for packaging an LED chip according to an embodiment of the present invention includes the following steps:
1. providing a bonding pad 1;
2. mounting a wafer 3 in a half-side region of the pad 1;
3. mounting a gluing mold on the bonding pad 1, covering the wafer 3 and the periphery of the wafer by the mold in a half-side area of the bonding pad 1, then coating a die bonding glue 2 on the bonding pad 1 on the mold, wherein the die bonding glue 2 is molded outside the half-side area covered by the mold on the bonding pad 1, and the wafer 3 is covered by the mold in the half-side area of the bonding pad 1 to form a mounting hollowed-out area 21 with the die covering range being the die bonding glue 2;
4. remove the mould, the dead zone 21 is drawn out only in the installation of light-emitting region so, and the lamp pearl is luminous expert of only half big and small conventional lamp pearl bright, the consumption and generate heat, but the heat dissipation is better, and structural strength is also higher, compares the lamp pearl of little half and more conveniently realizes the nondestructive installation moreover.
Referring to fig. 1 or 2, in the third step, for example, the mold is also covered in the other half area of the bonding pad 1, after the die attach adhesive 2 is coated, the covered area is the hollow area 22 of the die attach adhesive 2, and the bonding pad 1 may be exposed or not exposed in the hollow area 22 according to the depth covered by the mold, so as to reduce the material used for the die attach adhesive 2, increase the heat dissipation area and efficiency, and improve the heat dissipation effect of the lamp bead.
Referring to fig. 1, in step three, the covering shape of the mold in the other half area of the pad 1 is a diamond shape, and after the die attach adhesive 2 is coated, the hollow areas 22 are diamond-shaped, so that good structural strength is ensured around the hollow areas 22.
Referring to fig. 2, in step three, for example, the covering shape of the mold in the other half area of the pad 1 is an ellipse, and after the die attach adhesive 2 is coated, the hollow area 22 is an ellipse, so that the hollow area 22 has a larger heat dissipation area and the die attach adhesive material is reduced more.
Referring to fig. 3, in the third step, for example, the covering shape of the mold in the other half area of the bonding pad 1 is hourglass-shaped, and after the die attach glue 2 is coated, the hollow-out area 22 is hourglass-shaped, so that the hollow-out area 22 has more heat dissipation area and less die attach glue material, and meanwhile, more die attach glue 2 is maintained at both ends and in the middle of the hollow-out area 22, and the structural strength is good.
Exemplarily, in step one, pad 1 is aluminized at the back, promotes the heat dispersion of pad 1, realizes the perpendicular radiating effect of lamp pearl well to promote the chip performance.
Illustratively, in the third step, the die bond 2 is epoxy resin, and has good high temperature resistance.
Illustratively, in the first step, a first polar plate 11 and a second polar plate 12 which are arranged side by side and spaced are arranged on the pad 1, in the second step, the wafer 3 is mounted on the first polar plate 11 in the half-side area of the pad 1, the first electrode of the wafer 3 is electrically connected with the first polar plate 11, the second electrode of the wafer 3 is electrically connected with the half-side area of the second polar plate 12 corresponding to the first polar plate 11 through gold wires, so as to ensure that the wafer 3 is positioned on the polar plate in the half-side area of the pad 1, and the pad 1 and the other half-side area of the first polar plate 11 and the second polar plate 12 are not applied.
Illustratively, in the first step, the first plate 11 is larger than the second plate 12, so as to facilitate mounting the wafer 3 on the first plate 11, and the second plate 12 only needs to be connected with gold wires, without a large area.
Illustratively, in step four, an encapsulation adhesive is poured into the mounting hollow area 21, and the wafer 3 is hermetically protected in the mounting hollow area 21, thereby completing the structure of the lamp bead.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (9)
1. A packaging method of an LED chip is characterized by comprising the following steps:
1. providing a bonding pad;
2. mounting a wafer in a half-side region of the pad;
3. installing a gluing mold on the bonding pad, covering the wafer and the periphery in a half-side area of the bonding pad by the mold, then coating a die bonding glue on the bonding pad on the mold, wherein the wafer is covered by the mold in the half-side area of the bonding pad to form an installation vacant area of the die bonding glue, the mold is also covered in the other half-side area of the bonding pad, after the die bonding glue is coated, the covered area is a hollow area of the die bonding glue, and the bonding pad is exposed or not exposed in the hollow area;
4. the mold is removed.
2. The method for packaging an LED chip as claimed in claim 1, wherein: in the third step, the covering shape of the die in the other half side area of the bonding pad is a diamond shape, and after the die bonding glue is coated, the hollow area is in the diamond shape.
3. The method for packaging an LED chip as claimed in claim 1, wherein: in the third step, the covering shape of the die in the other half area of the bonding pad is an ellipse, and the hollow area is an ellipse after the die attach glue is coated.
4. The method for packaging an LED chip according to claim 1, wherein: in the third step, the covering shape of the die in the other half area of the bonding pad is hourglass-shaped, and after the die bonding glue is coated, the hollowed-out area is hourglass-shaped.
5. The method for packaging an LED chip according to any one of claims 1 to 4, wherein: in step one, the bonding pad is aluminized on the back side.
6. The method for packaging an LED chip according to any one of claims 1 to 4, wherein: in the third step, the die bond adhesive is epoxy resin.
7. The method for packaging LED chips according to any one of claims 1-4, wherein: in the second step, the wafer is installed on the first polar plate in the half-side area of the bonding pad, a first electrode of the wafer is in conductive connection with the first polar plate, and a second electrode of the wafer is in conductive connection with the second polar plate through gold wires and in the half-side area of the second polar plate, corresponding to the first polar plate, on the same side.
8. The method for packaging an LED chip as claimed in claim 7, wherein: in step one, the first polar plate is larger than the second polar plate.
9. The method for packaging an LED chip according to any one of claims 1 to 4, wherein: and in the fourth step, pouring packaging glue into the mounting hollowed-out area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110288226.6A CN113078252B (en) | 2021-03-17 | 2021-03-17 | Packaging method of LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110288226.6A CN113078252B (en) | 2021-03-17 | 2021-03-17 | Packaging method of LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113078252A CN113078252A (en) | 2021-07-06 |
| CN113078252B true CN113078252B (en) | 2022-11-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110288226.6A Active CN113078252B (en) | 2021-03-17 | 2021-03-17 | Packaging method of LED chip |
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Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411207C (en) * | 2004-06-28 | 2008-08-13 | 京瓷株式会社 | Light emitting device and lighting device |
| JP2007027799A (en) * | 2006-11-01 | 2007-02-01 | Sanyo Electric Co Ltd | Led display device |
| DE102010023955A1 (en) * | 2010-06-16 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| CN102832142A (en) * | 2011-06-14 | 2012-12-19 | 弘凯光电股份有限公司 | Manufacturing method for packaging structure |
| DE212013000297U1 (en) * | 2013-05-17 | 2016-01-11 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| CN106328642A (en) * | 2016-10-18 | 2017-01-11 | 深圳成光兴光电技术股份有限公司 | Chip LED for mixed light source |
| KR102385940B1 (en) * | 2017-09-01 | 2022-04-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device package and light source unit |
| CN111739992A (en) * | 2020-07-21 | 2020-10-02 | 深圳市斯迈得半导体有限公司 | High leakproofness supporting structure |
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2021
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| Publication number | Publication date |
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| CN113078252A (en) | 2021-07-06 |
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