CN113078086B - Silicon wafer taking method - Google Patents
Silicon wafer taking method Download PDFInfo
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- CN113078086B CN113078086B CN202110187006.4A CN202110187006A CN113078086B CN 113078086 B CN113078086 B CN 113078086B CN 202110187006 A CN202110187006 A CN 202110187006A CN 113078086 B CN113078086 B CN 113078086B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 338
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 337
- 239000010703 silicon Substances 0.000 title claims abstract description 337
- 238000000034 method Methods 0.000 title claims abstract description 68
- 235000012431 wafers Nutrition 0.000 claims abstract description 348
- 239000000463 material Substances 0.000 claims abstract description 217
- 230000007246 mechanism Effects 0.000 claims abstract description 73
- 238000000926 separation method Methods 0.000 claims abstract description 36
- 238000007664 blowing Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 abstract description 17
- 150000003376 silicon Chemical class 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 230000009194 climbing Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Sheets, Magazines, And Separation Thereof (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a silicon wafer material taking method, which is used for taking out silicon wafers stacked in a material box piece by piece, and comprises the following steps: when the jacking plate in the material box stays at a low position, the silicon wafer in the material box is jacked by the jacking mechanism, so that the current top silicon wafer in the material box is jacked to a preset high position; starting a separation air knife to blow air towards the topmost silicon wafer so as to separate the topmost silicon wafer from the silicon wafer below, and taking out the separated topmost silicon wafer from the material box; judging whether the total thickness of the silicon wafers in the material box is lower than a preset thickness; and when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, starting the pre-blowing knife to transversely pre-blow the silicon wafers in the material box, and driving the silicon wafers in the material box to descend by utilizing the jacking mechanism until the bottommost silicon wafer in the material box is positioned at a low position. The invention can take out the laminated silicon wafers from the material box one by one, and can ensure that other silicon wafers in the material box cannot be carried in the material taking process.
Description
Technical Field
The invention relates to the field of battery production, in particular to a silicon wafer taking method.
Background
In the production process of the battery assembly, the silicon wafers stacked in the material boxes need to be taken out of the material boxes one by one and transported to a next station. The front and back surfaces of the silicon wafers are smooth surfaces, and the adjacent silicon wafers stacked together are easy to adsorb, so that the adsorption phenomenon can cause that when the current silicon wafer stacked on the topmost layer is absorbed, the silicon wafer below the silicon wafer is taken out of the material box, so that the silicon wafer falls off and is damaged.
Disclosure of Invention
In order to solve the technical problems, the invention provides a silicon wafer taking method, which comprises the following specific technical scheme:
the silicon wafer feeding method is used for taking out the silicon wafers stacked in the material box piece by piece and comprises the following steps:
when the jacking plate in the material box stays at a low position, the silicon wafer in the material box is jacked by the jacking mechanism, so that the current top silicon wafer in the material box is jacked to a preset high position;
starting a separation air knife to blow air towards the topmost silicon wafer so as to separate the topmost silicon wafer from the silicon wafer below, and taking out the separated topmost silicon wafer from the material box;
judging whether the total thickness of the silicon wafers in the material box is lower than a preset thickness;
and when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, starting the pre-blowing knife to transversely pre-blow the silicon wafers in the material box, and driving the silicon wafers in the material box to descend by utilizing the jacking mechanism until the bottommost silicon wafer in the material box is positioned at a low position.
According to the silicon wafer taking method provided by the invention, when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, the silicon wafers are pre-blown by adopting the pre-blowing knife before the current topmost silicon wafer is taken. When the current topmost silicon wafer is taken, the current topmost silicon wafer is blown by adopting a separation air knife so as to completely separate the current topmost silicon wafer from the silicon wafer below the current topmost silicon wafer. The invention can take out the laminated silicon wafers from the material box one by one, and can ensure that other silicon wafers in the material box cannot be carried in the material taking process.
In some embodiments, after removing the separated topmost silicon wafer from the cassette, the method further comprises:
adding 1 to the first count value;
the step of driving the silicon wafer in the material box to descend by using the jacking mechanism comprises the following steps:
when the first count value reaches a first preset count value, subtracting the stroke height corresponding to the first preset count value from the existing descending stroke to obtain a shortened descending stroke, replacing the existing descending stroke with the shortened descending stroke, driving the silicon wafer in the material box to descend by utilizing the jacking mechanism according to the replaced descending stroke, and resetting the first count value to 0;
when the first count value does not reach the first preset count value, the jacking mechanism is utilized to drive the silicon wafers in the material box to descend according to the existing descending travel.
By counting the first count value, the descending travel of the lifting mechanism is calculated, and the descending travel of the lifting mechanism is shortened along with the reduction of the thickness of the silicon wafer in the material box, so that the production beat is improved.
In some embodiments, after the silicon wafer in the material box is driven to descend by the jacking mechanism until the bottommost silicon wafer in the material box is located at a low position, the material taking method further comprises: directly closing the pre-blowing knife; or closing the pre-blowing knife after waiting for a predetermined time.
Compared with the method that the pre-blowing knife is directly closed after the bottommost silicon wafer in the material box reaches the low position, the pre-blowing knife is closed after waiting for a preset time, the pre-blowing effect can be improved, and the material taking effect is further improved.
In some embodiments, after the removing the separated topmost silicon wafer from the cassette and before the lifting the silicon wafer within the cassette with the lifting mechanism, the method further comprises: and closing the separation air knife.
After the separated topmost silicon wafer is taken out from the material box and before the silicon wafer in the material box is jacked by the jacking mechanism, the separation air knife is closed, so that the influence of the separation air knife on the preset high-position judgment is reduced.
In some embodiments, the predetermined length of time is 0 to 0.8 seconds.
The value of the preset time length is 0-0.8 seconds, so that the production takt time can be met, and the material taking effect can be improved.
In some embodiments, after determining whether the total thickness of the silicon wafers within the cassette is less than a predetermined thickness, the method further comprises:
when the total thickness of the silicon wafers in the material box is judged to be lower than the preset thickness, the silicon wafers in the material box are jacked by a jacking mechanism, so that the top-most silicon wafers in the material box are jacked to a preset high position;
opening a separation air knife to blow air towards the topmost silicon wafer in the material box so as to separate the topmost silicon wafer from the silicon wafer below, taking the separated topmost silicon wafer out of the material box, closing the separation air knife, and continuously executing the step of jacking the silicon wafer in the material box by utilizing a jacking mechanism so as to enable the topmost silicon wafer in the material box to be jacked to a preset high position until all the silicon wafers in the material box are taken out.
When the total thickness of the silicon wafers in the material box is lower than the preset thickness, the current top-layer silicon wafer and the silicon wafers below the top-layer silicon wafer can be smoothly separated by only adopting a separation air knife, and the silicon wafers do not need to be pre-blown. Therefore, only when the silicon wafer is taken, the separating air knife is used for blowing air to the silicon wafer, and the picked silicon wafer and the silicon wafer below the silicon wafer can be completely separated smoothly, so that the taking efficiency is improved.
In some embodiments, after lifting the silicon wafer in the cassette with the lifting mechanism such that the topmost silicon wafer in the cassette is lifted to a predetermined elevated position, the method further comprises:
adding 1 to the second count value, wherein the initial value of the second count value is 0;
judging whether the silicon wafer in the material box is lower than a preset thickness or not, comprising the following steps:
it is determined whether the second count value is greater than a second predetermined count value.
A method for judging the thickness of silicon wafers in a material box is provided, which judges whether the silicon wafers in the material box are lower than a preset thickness or not by counting the lifting times (namely the material taking times) of a lifting mechanism.
In some embodiments, the inner wall of the cartridge is provided with a first pair of photosensors at a predetermined height from the bottom of the cartridge, the predetermined height having the same value as the predetermined thickness; judging whether the silicon wafer in the material box is lower than a preset thickness or not, comprising the following steps: it is determined whether the first pair of photosensors produces a varying electrical signal.
The first opposite-emitting photoelectric sensor is arranged to judge whether the silicon wafer in the material box is lower than the preset thickness
In some embodiments, a second pair of photoelectric sensors is arranged at the same level of the preset high position and used for sensing whether the silicon chip exists in the preset high position.
By arranging the second opposite-incidence photoelectric sensor, the current rising in-place detection of the topmost silicon wafer is realized.
In some embodiments, the predetermined thickness has a value of 5 to 10mm. In some embodiments, a sucker assembly is arranged above the material box, and the suction pressure of the sucker assembly is 0.4MPa to 0.5MPa; taking out the separated topmost silicon wafer from the material box, comprising:
and the sucking disc assembly is used for descending to a material taking position above the topmost silicon wafer, the suction of the topmost silicon wafer is implemented, and the distance between the material taking position and the topmost silicon wafer is 5-10 mm.
Through setting up sucking disc subassembly to set up sucking pressure and adsorption distance to sucking disc subassembly, realized getting the material to the silicon chip.
Drawings
FIG. 1 is a flow chart of a silicon wafer reclaiming method according to a first embodiment of the invention;
FIG. 2 is an exploded view of a portion of the process flow of the wafer reclaiming method of the present invention in a first embodiment;
FIG. 3 is a flow chart of a silicon wafer reclaiming method according to a second embodiment of the present invention;
fig. 4 is an exploded view of a portion of the process flow of the wafer reclaiming method of the present invention in a second embodiment.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
In the production process of the battery assembly, the silicon wafers stacked in the material boxes need to be taken out of the material boxes one by one and transported to a next station. The front and back surfaces of the silicon wafers are smooth surfaces, and the adjacent silicon wafers stacked together are easy to produce adsorption adhesion, and the adsorption adhesion can cause that when the current silicon wafer stacked on the topmost layer is sucked, the silicon wafer below is brought out of the material box to fall off and be damaged.
In view of the above, the invention provides a silicon wafer taking method, which can take out stacked silicon wafers from a material box one by one and ensure that other silicon wafers in the material box cannot be carried in the material taking process. The silicon wafer reclaiming method of the present invention will be exemplarily described by two examples.
Example 1
Fig. 1 is a flowchart of a silicon wafer taking method according to the present embodiment, where the silicon wafer taking method includes:
and 101, when the jacking plate in the material box stays at a low position, jacking the silicon wafer in the material box by utilizing a jacking mechanism so as to enable the current top-most silicon wafer in the material box to be jacked to a preset high position.
The material box is of a box-shaped structure with an open bottom, the material box is fixed on the frame, silicon wafers in the material box are stacked on a lifting plate of a lifting mechanism, and the lifting mechanism realizes the lifting of the silicon wafers in the material box through the lifting plate.
Before the material taking is performed, the material box stacked with the silicon wafers is fixed on the frame. The jacking plate is adjusted to a low position through the jacking mechanism, so that the silicon wafers in the material box are supported on the jacking plate. At this time, the current top-most silicon wafer is the first silicon wafer. The first silicon wafer is not subjected to the pressure of other silicon wafers, so that the adsorption force between the first silicon wafer and the silicon wafer below the first silicon wafer is small.
And starting a material taking process, and lifting the silicon wafer in the material box by the jacking mechanism through the jacking plate, so that the first silicon wafer is firstly jacked to a preset high position, wherein the preset high position is the material taking position. It can be seen that the first silicon wafer is directly lifted to a predetermined high position and waits for the taking action to be performed.
And 102, starting a separation air knife to blow air towards the topmost silicon wafer so as to separate the topmost silicon wafer from the silicon wafer below, and taking the separated topmost silicon wafer out of the material box.
When the topmost silicon wafer is lifted by the lifting mechanism to a preset high position, the separating air knife separates the topmost silicon wafer from the silicon wafer below, and then the material taking mechanism performs the material taking action, so that other silicon wafers are prevented from being brought out when the topmost silicon wafer is picked up. As described above, since the adsorption force between the first silicon wafer and the silicon wafer thereunder is small, when the first silicon wafer is lifted up to a predetermined high position, the separation air knife can smoothly separate it from the silicon wafer thereunder.
The wind gap of the separation wind knife is of a long and narrow slit structure extending along the vertical direction, the middle wind force of the wind gap of the separation wind knife is maximum, and the separation force on the silicon wafer is also maximum. Optionally, the separation air knives are arranged in two groups, the two groups of separation air knives are symmetrically arranged on two sides of the material basket, and the middle part of the air opening of the separation air knives is positioned at a preset high position. When the silicon wafer at the top layer moves to a preset high position under the lifting of the lifting mechanism, the middle part of the air port of the separation air knife is directly over against the silicon wafer at the top layer to blow air, so that the silicon wafer at the top layer is separated from the silicon wafer below.
Step 103, judging whether the total thickness of the silicon wafers in the material box is lower than a preset thickness.
As will be appreciated by those skilled in the art, the more wafers within the cassette, or the thicker the overall thickness of the wafers, the greater the adsorption force between adjacent wafers. Therefore, when the total thickness of the silicon wafers in the magazine is not lower than the predetermined thickness, only the topmost silicon wafer is blown by the separation air knife at the time of pickup, and it is difficult to ensure that the topmost silicon wafer is effectively separated from the silicon wafers below.
Therefore, after the material taking of the first silicon wafer is completed, it is necessary to determine whether the total thickness of the silicon wafers in the current magazine is lower than a predetermined thickness before the material taking is performed on the next silicon wafer.
And 104, when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, starting a pre-blowing knife to transversely pre-blow the silicon wafers in the material box, and driving the silicon wafers in the material box to descend by utilizing a jacking mechanism until the bottommost silicon wafer in the material box is positioned at a low position.
If the total thickness of the silicon wafers in the current material box is not lower than the preset thickness, firstly starting the pre-blowing cutter, and then using the jacking mechanism to drive the silicon wafers in the material box to descend until the bottommost silicon wafer in the material box descends to a low position, namely, the jacking plate returns to the low position. The silicon wafer is pre-blown away by a pre-blowing air knife in the descending process. The wind gap of the pre-blowing knife comprises a plurality of round holes which are distributed up and down, the aperture of the round holes is smaller, and the wind speed is faster. Optionally, the pre-blowing air knives are also arranged in two groups, and the two groups of pre-blowing air knives are symmetrically arranged at two sides of the material basket.
After step 104 is executed, the silicon wafer in the material box is pre-blown, the lifting plate returns to the low position, namely, the lifting plate lifts the silicon wafer in the material box to the low position, step 101 to step 104 are executed again, and the silicon wafer in the material box is taken successively.
Therefore, by adopting the silicon wafer taking method provided by the embodiment, after the first silicon wafer is taken. For the silicon wafers to be taken subsequently, whether the total thickness of the silicon wafers in the material box is lower than a preset thickness is judged. When the total thickness of the silicon wafers in the material box is not lower than the preset thickness, a pre-blowing knife is adopted to pre-blow off the silicon wafers before the silicon wafers are taken. And during material taking, separating the topmost silicon wafer from the silicon wafer below by adopting a separation air knife.
The silicon wafer taking method can ensure that when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, the silicon wafers in the material box can be taken out one by one, and other silicon wafers in the material box cannot be taken out.
In order to more clearly understand the detailed material taking process of the silicon wafer material taking method provided in this embodiment, hereinafter, in connection with fig. 2, we will describe the material taking process of the current top-most silicon wafer in the case that the total thickness of the silicon wafers in the material box is not less than the predetermined thickness and the current top-most silicon wafer is not the first silicon wafer.
As shown in a of fig. 2, after the material taking of the previous silicon wafer is completed, when the total thickness of the silicon wafer in the material outlet box is not lower than the preset thickness, the pre-blowing knife 2 is started to transversely pre-blow the silicon wafer in the material box, and the lifting mechanism 1 is utilized to drive the silicon wafer in the material box to descend until the bottommost silicon wafer in the material box descends to a low position. To this end, the pre-blow process of step 104 is performed.
Next, as shown in b of fig. 2, the silicon wafer in the cassette is lifted up by the lift mechanism 1 so that the current topmost silicon wafer in the cassette is lifted up to a predetermined high position. And then starting the separation air knife 3 to blow air towards the current topmost silicon wafer so as to separate the current topmost silicon wafer from the silicon wafer below.
Next, as shown at c in fig. 2, the separating air knife 3 is kept open and the take-off mechanism 4 is lowered.
Finally, as shown by d in fig. 2, the take-out mechanism 4 takes out the topmost silicon wafer from the cassette. The reclaiming process of steps 101 and 102 is thus completed.
Example 2
Fig. 3 is a flowchart of a silicon wafer reclaiming method provided in the present embodiment, the silicon wafer reclaiming method including:
and 201, when the lifting plate in the material box is at a low position, lifting the silicon wafer in the material box by utilizing a lifting mechanism so that the current top-most silicon wafer in the material box is lifted to a preset high position.
And 202, starting a separation air knife to blow air towards the topmost silicon wafer so as to separate the topmost silicon wafer from the silicon wafer below, and taking the separated topmost silicon wafer out of the material box.
Optionally, in this embodiment, after the step 202 is performed, the following steps may be further included:
adding 1 to the first count value;
utilize climbing mechanism to drive the silicon chip in the magazine and descend, include:
when the first count value reaches a first preset count value, subtracting the stroke height corresponding to the first preset count value from the existing descending stroke to obtain a shortened descending stroke, replacing the existing descending stroke with the shortened descending stroke, driving a silicon wafer in the material box to descend according to the replaced descending stroke by utilizing a jacking mechanism, and resetting the first count value to 0;
when the first count value does not reach the first preset count value, the lifting mechanism is utilized to drive the silicon wafers in the material box to descend according to the existing descending travel.
That is, the stroke height of the lifting mechanism for driving the silicon wafer in the material box to descend needs to be determined by comparing the first count value with the first preset count value.
Specifically, assuming that the first predetermined count value is 10, the existing descent stroke is 100mm, and the thickness of a single silicon wafer is 0.2mm, the stroke height corresponding to the first predetermined count value 10 is 2mm. The initial value of the first count value is 0, and when one silicon wafer is taken out, the first count value is added with 1, when the first count value is smaller than 10, the descending stroke height of the jacking mechanism is 100mm of the existing descending stroke, and when the first count value is equal to 10, the descending stroke height of the jacking mechanism is as follows: the stroke height corresponding to the existing descending stroke 100mm minus the first predetermined count value 10 is 2mm, namely 98mm.
And resetting the first count value to 0, adding 1 to the first count value every time a piece of silicon wafer is taken out, wherein when the first count value is smaller than 10, the descending stroke height of the climbing mechanism is 98mm (namely, the shortened descending stroke is replaced by the existing descending stroke), and when the first count value is equal to 10, the descending stroke height of the climbing mechanism is as follows: the stroke height corresponding to the existing descent stroke 98mm minus the first predetermined count value 10 is 2mm, namely 96mm.
While resetting the first count value to 0 and then looping through the above steps.
By counting the first count value, the descending travel of the lifting mechanism is calculated, and the descending travel of the lifting mechanism is shortened along with the reduction of the thickness of the silicon wafer in the material box, so that the production beat is improved.
It should be noted that, for the selection of the first predetermined count value, the setting may be performed according to the stroke height corresponding to the first predetermined count value, for example, the required stroke height is 10mm, and the thickness of the single silicon wafer is 0.2mm, and then the first predetermined count value is the stroke height divided by the thickness of the single silicon wafer, that is, 50. For the selection of the stroke height, flexible selection can be performed according to different production takt requirements, namely, the value of the first preset count value can be flexibly selected according to different production takt requirements.
Of course, the first count value may be counted by the self-contained encoder driven by the jacking mechanism itself, or may be counted by an external counter, which is not particularly required in the present invention.
Step 203, determining whether the total thickness of the silicon wafers in the material box is lower than a preset thickness.
Since steps 201 to 203 correspond to steps 101 to 103 in the foregoing embodiment 1 one by one, specific details thereof will not be described in the present specification.
According to the judgment result of step 203, the following step 204 or step 205 is selected to be executed.
And 204, when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, starting a pre-blowing knife to transversely pre-blow the silicon wafers in the material box, and driving the silicon wafers in the material box to descend by utilizing a jacking mechanism until the bottommost silicon wafer in the material box is positioned at a low position.
When the step 204 is selected to be performed, the reclaiming process of the present embodiment is the same as that of the previous embodiment 1. Namely, the material taking process is performed under the condition that the total thickness of the silicon wafers in the material box is not lower than the preset thickness. The material taking process in this case has been described in detail in the foregoing embodiment 1, and thus will not be described here again.
Optionally, in this embodiment, after performing step 204, the method further includes the following steps:
step 206, directly closing the pre-blowing knife; or closing the pre-blowing knife after waiting for a predetermined time.
That is, after the pre-blowing of the silicon wafer is completed, the pre-blowing blade is required to be turned off, and then the lifting operation in the subsequent step 201 and the material taking operation in the step 202 are performed. Compared with the method that the air knife is directly closed after the silicon wafer descends in place, the pre-blowing knife is closed after the preset time is waited, the pre-blowing effect can be improved, and therefore the current top-layer silicon wafer and the lower silicon wafer can be separated more easily by the separation air knife when the material taking action of the step 202 is executed later.
Optionally, the preset time length is set to be 0-0.8 seconds, and the value of the preset time length is set to be 0-0.8 seconds, so that the production takt time can be met, the material taking effect can be improved, and the specific value is selected according to actual conditions.
In order to reduce the influence of the separation air knife on the preset high-level judgment, the separation air knife is closed only after the separated topmost silicon wafer is taken out of the material box and before the silicon wafer in the material box is lifted by utilizing the lifting mechanism.
Specifically, after the separated topmost silicon wafer is taken out from the material box, the separation air knife is closed, then the pre-air knife is opened, and the jacking mechanism drives the silicon wafer in the material box to descend; the pre-blowing cutter can be opened after the separated topmost silicon wafer is taken out from the material box, then the jacking mechanism drives the silicon wafer in the material box to descend, the separation air cutter is closed in the process that the jacking mechanism drives the silicon wafer in the material box to descend, and the separation air cutter can be closed when the jacking mechanism drives the silicon wafer in the material box to reach a low position. In short, the separation air knife is closed after the separated topmost silicon wafer is taken out from the material box and before the silicon wafer in the material box is lifted by the lifting mechanism.
Step 205, when the total thickness of the silicon wafers in the material box is judged to be lower than the preset thickness, the silicon wafers in the material box are jacked by a jacking mechanism, so that the top-most silicon wafers in the material box are jacked to a preset high position; starting a separation air knife to blow air towards the topmost silicon wafer in the material box so as to separate the topmost silicon wafer from the silicon wafer below, taking the separated topmost silicon wafer out of the material box, and continuously executing the step of jacking the silicon wafer in the material box by utilizing a jacking mechanism so as to jack the topmost silicon wafer in the material box to a preset high position until all the silicon wafers in the material box are taken out.
As will be appreciated by those skilled in the art, the fewer wafers stacked within the cassette, or the thinner the overall thickness of the wafers, the less the adsorption force between the wafers. Therefore, when the total thickness of the silicon wafers in the material box is lower than the preset thickness, the silicon wafer layers in the material box do not need to be pre-blown away, and only the air knife is used for blowing the silicon wafers at the top layer during material taking, so that the silicon wafers at the top layer can be smoothly separated from the silicon wafers below.
Therefore, when the total thickness of the silicon wafers in the cassette is lower than the predetermined thickness, the silicon wafers in the cassette can be continuously and rapidly taken out by performing step 205. Namely: before the silicon wafer is taken, the pre-blowing blade is not needed to be utilized to pre-blow the silicon wafer.
Here, it is to be noted that the case where the total thickness of the silicon wafers in the cassette is lower than the predetermined thickness is derived from the following two cases:
in the first case, the number of initial silicon wafers in the material box is large, and after the material taking of the first silicon wafer is completed, the total thickness of the silicon wafers in the material box is not lower than the preset thickness, but along with the cyclic execution of the steps 201 to 205, the total thickness of the silicon wafers in the material box is continuously reduced until the total thickness is lower than the preset thickness.
And secondly, the number of initial silicon wafers in the material box is small, and after the material taking of the first silicon wafer is completed, the total thickness of the silicon wafers in the material box is lower than the preset thickness. In this case, after steps 201 to 203 are performed, the embodiment proceeds to step 205, and steps 204 and 206 are not performed.
For a clearer understanding of the implementation of step 205 in this embodiment, in the following, in connection with fig. 4, we describe a process of taking out silicon wafers in a cassette, that is, an implementation of step 205, in a case where the total thickness of the silicon wafers in the cassette is lower than a predetermined thickness.
Firstly, as shown in a of fig. 4, the silicon wafer in the material box is lifted by the lifting mechanism 1, so that the current top-most silicon wafer in the material box is lifted to a preset high position, and then a separation air knife is started, so that the current top-most silicon wafer is separated from the silicon wafer below.
Next, as shown in b of fig. 4, the separation blade 3 is kept open and the take-off mechanism 4 is lowered to a take-off position above the topmost silicon wafer.
Next, as shown at c in fig. 4, the take-out mechanism 4 takes the topmost wafer out of the cassette. Thus, the material taking of the current topmost silicon wafer is completed.
Then, as shown in d in fig. 4, the silicon wafer in the material box is continuously lifted by using the lifting mechanism 1, so that the top silicon wafer to be taken next is lifted to a preset high position, then the separating air knife 3 is started, and the material taking mechanism 4 is controlled to descend so as to complete the material taking of the top silicon wafer to be taken next.
It can be seen that, along with the continuous lifting of the lifting mechanism 1, the silicon wafers in the material box are sequentially lifted to a preset high position (namely a material taking position), and taken out under the cooperation of the separating air knife 3 and the material taking mechanism 4 until the silicon wafers in the material box are all taken out.
As shown in fig. 3, when the silicon wafer taking method in this embodiment is performed, step 203 is required to determine whether the total thickness of the silicon wafers in the cassette is lower than a predetermined thickness, and step 204 or step 205 is selectively performed according to a specific determination result.
Of course, one skilled in the art can select a variety of available judgment methods in practicing the present invention. In order to enable those skilled in the art to practice the present invention more conveniently, the present embodiment provides the following two preferred methods of determining whether the total thickness of the silicon wafer in the cassette is lower than the predetermined thickness.
The first judgment method comprises the following steps:
the first pair of photosensors is provided on the inner wall of the cartridge in advance at a position at a predetermined height from the bottom of the cartridge, the predetermined height having the same value as the predetermined thickness described above.
The judging whether the total thickness of the silicon wafers in the material box is lower than a preset thickness comprises the following steps: it is determined whether the first pair of photosensors produces a varying electrical signal. Namely: when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, the first pair of photoelectric sensors are shielded by the silicon wafers, and generate a first electric signal (such as a low level); when the total thickness of the silicon wafers in the material box is lower than the preset thickness, the first pair of photoelectric sensors are not shielded by the silicon wafers, and the first pair of photoelectric sensors generate a second electric signal (such as a high level).
And a judging method II:
in some take-out embodiments, the initial number of silicon wafers in the cassette is a constant value, such as 50 wafers. Assuming a thickness of 0.5mm for a piece of silicon wafer, the initial thickness value for the silicon wafer in the cassette is 25mm.
If the predetermined thickness is set to 10mm, the thickness of the silicon wafer in the material box is lower than the predetermined thickness after the material taking times are more than 30 times. Therefore, whether the silicon wafer in the discharging box is lower than the preset thickness can be judged by counting the material taking times and judging whether the second counting value is larger than the second preset counting value, such as 30.
Specific: the initial value of the second count value is 0.
In the execution process of the material taking method, every time the topmost silicon wafer in the material box is lifted to a preset high position by the lifting mechanism, the second count value is increased by 1, that is, every time one silicon wafer is taken out, the second count value is increased by 1.
Judging whether the second count value is larger than a second preset count value, if so, the thickness of the silicon wafer in the current material box is lower than the preset thickness, otherwise, the thickness of the silicon wafer in the current material box is not lower than the preset thickness.
Of course, the second count value may be counted by the self-contained encoder driven by the jacking mechanism itself, or may be counted by an external counter, which is not particularly required in the present invention.
As shown in fig. 3, when the current top-most silicon wafer in the material box is fetched, it is required to ensure that the current top-most silicon wafer is just lifted to a predetermined high position (i.e., the fetching position), that is, when the current top-most silicon wafer is lifted to the predetermined high position, the lifting mechanism needs to stop lifting immediately.
In order to achieve the control effect, optionally, in the embodiment of the present invention, a second pair of photoelectric sensors is disposed at the same horizontal position of the predetermined high position, and when the topmost silicon wafer is lifted to the predetermined high position, the second pair of photoelectric sensors is shielded by the topmost silicon wafer to generate an in-place induction signal (such as a low level), and the lifting mechanism immediately stops lifting after receiving the in-place induction signal, so as to ensure that the topmost silicon wafer is lifted and positioned at the predetermined high position.
Optionally, the material taking mechanism in this embodiment is a sucker assembly disposed above the material box, and the suction pressure of the sucker assembly is 0.4MPa to 0.5MPa. When the topmost silicon wafer is lifted to a preset high position and separated by the separating air knife, the sucker assembly descends to a material taking position above the topmost silicon wafer so as to absorb the topmost silicon wafer.
Optionally, the distance between the material taking position and the topmost silicon wafer is 5-10 mm, and the specific value is selected according to actual conditions.
The invention has been described above in sufficient detail with a certain degree of particularity. It will be appreciated by those of ordinary skill in the art that the descriptions of the embodiments are merely exemplary and that all changes that come within the true spirit and scope of the invention are desired to be protected. The scope of the invention is indicated by the appended claims rather than by the foregoing description of the embodiments.
Claims (10)
1. The silicon wafer material taking method is used for taking out the silicon wafers stacked in the material box piece by piece, and is characterized by comprising the following steps:
when the jacking plate in the material box stays at a low position, jacking the silicon wafer in the material box by utilizing a jacking mechanism so that the current topmost silicon wafer in the material box is jacked to a preset high position;
opening a separation air knife to blow air towards the topmost silicon wafer so as to separate the topmost silicon wafer from the silicon wafer below, and taking the separated topmost silicon wafer out of the material box;
judging whether the total thickness of the silicon wafers in the material box is lower than a preset thickness or not;
and when the total thickness of the silicon wafers in the material box is not lower than the preset thickness, starting a pre-blowing knife to transversely pre-blow the silicon wafers in the material box, and driving the silicon wafers in the material box to descend by utilizing the jacking mechanism until the bottommost silicon wafer in the material box is positioned at a low position.
2. The silicon wafer reclaiming method of claim 1 wherein after the separated topmost silicon wafer is withdrawn from the cassette, the method further comprises:
adding 1 to the first count value;
the step of driving the silicon wafer in the material box to descend by using the jacking mechanism comprises the following steps:
when the first count value reaches a first preset count value, subtracting the stroke height corresponding to the first preset count value from the existing descending stroke to obtain a shortened descending stroke, replacing the existing descending stroke with the shortened descending stroke, driving the silicon wafer in the material box to descend by utilizing the jacking mechanism according to the replaced descending stroke, and resetting the first count value to 0;
when the first count value does not reach the first preset count value, the jacking mechanism is utilized to drive the silicon wafers in the material box to descend according to the existing descending travel.
3. The method of claim 1, wherein after the silicon wafer in the material box is driven to descend by the jacking mechanism until the bottommost silicon wafer in the material box is located at a low position, the method further comprises:
directly closing the pre-blowing air knife; or,
and closing the pre-blowing air knife after waiting for a preset time.
4. The wafer reclaiming method of claim 1 wherein after the separated topmost wafer is withdrawn from the cassette and before the lifting of the wafer within the cassette with the lifting mechanism, the method further comprises:
and closing the separation air knife.
5. A silicon wafer reclaiming method according to claim 3 wherein the predetermined time period is 0-0.8 seconds.
6. The method of claim 1, wherein after determining whether the total thickness of the silicon wafers in the cassette is less than a predetermined thickness, the method further comprises:
when the total thickness of the silicon wafers in the material box is judged to be lower than the preset thickness, the silicon wafers in the material box are jacked by a jacking mechanism, so that the topmost silicon wafer in the material box is jacked to the preset high position;
opening a separation air knife to blow air towards the topmost silicon wafer in the material box so as to separate the topmost silicon wafer from the silicon wafer below, taking the separated topmost silicon wafer out of the material box, closing the separation air knife, and continuously executing the step of lifting the silicon wafer in the material box by using a lifting mechanism so as to lift the topmost silicon wafer in the material box to the preset high position until all the silicon wafers in the material box are taken out.
7. The silicon wafer reclaiming method as claimed in claim 1, wherein after the silicon wafer in the magazine is lifted up by the lift-up mechanism so that a topmost silicon wafer in the magazine is lifted up to a predetermined high position, the method further comprises:
adding 1 to a second count value, wherein the initial value of the second count value is 0;
the judging whether the silicon wafer in the material box is lower than a preset thickness or not comprises the following steps:
and judging whether the second count value is larger than a second preset count value.
8. The method according to claim 1, wherein the inner wall of the magazine is provided with a first pair of photoelectric sensors at a predetermined height from the bottom of the magazine, and the predetermined height has the same value as the predetermined thickness;
the judging whether the silicon wafer in the material box is lower than a preset thickness or not comprises the following steps:
and judging whether the first correlation photoelectric sensor generates a changed electric signal or not.
9. The method according to claim 1, wherein a second pair of photoelectric sensors is arranged at the same level as the predetermined high level, and the second pair of photoelectric sensors is used for sensing whether the predetermined high level has silicon chips;
the value of the preset thickness is 5-10 mm.
10. The silicon wafer taking method according to claim 1, wherein a sucking disc component is arranged above the material box, and the sucking pressure of the sucking disc component is 0.4-0.5 MPa;
the method for taking out the separated topmost silicon wafer from the material box comprises the following steps:
and the sucking disc assembly is used for descending to a material taking position above the topmost silicon wafer, sucking of the topmost silicon wafer is implemented, and the distance between the material taking position and the topmost silicon wafer is 5-10 mm.
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