CN113066894B - 一种适用于hbc电池的硼扩散方法 - Google Patents
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- CN113066894B CN113066894B CN202110140582.3A CN202110140582A CN113066894B CN 113066894 B CN113066894 B CN 113066894B CN 202110140582 A CN202110140582 A CN 202110140582A CN 113066894 B CN113066894 B CN 113066894B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 48
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 42
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 235000012431 wafers Nutrition 0.000 claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 25
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- 238000007254 oxidation reaction Methods 0.000 claims description 17
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- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 38
- 235000012239 silicon dioxide Nutrition 0.000 description 26
- 239000010453 quartz Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 17
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
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- 229910052698 phosphorus Inorganic materials 0.000 description 3
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- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Secondary Cells (AREA)
Abstract
Description
Claims (3)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110140582.3A CN113066894B (zh) | 2021-02-02 | 2021-02-02 | 一种适用于hbc电池的硼扩散方法 |
EP21924047.0A EP4290593A4 (en) | 2021-02-02 | 2021-05-27 | BORON DIFFUSION PROCESS SUITABLE FOR AN HBC BATTERY |
JP2023528697A JP2023549857A (ja) | 2021-02-02 | 2021-05-27 | Hbc電池に適するホウ素拡散方法 |
AU2021426616A AU2021426616B2 (en) | 2021-02-02 | 2021-05-27 | Boron diffusion method suitable for hbc battery |
PCT/CN2021/096259 WO2022166040A1 (zh) | 2021-02-02 | 2021-05-27 | 一种适用于hbc电池的硼扩散方法 |
US18/316,044 US20230282760A1 (en) | 2021-02-02 | 2023-05-11 | Boron diffusion method suitable for heterojunction back contact solar cells |
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CN202110140582.3A CN113066894B (zh) | 2021-02-02 | 2021-02-02 | 一种适用于hbc电池的硼扩散方法 |
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CN113066894A CN113066894A (zh) | 2021-07-02 |
CN113066894B true CN113066894B (zh) | 2022-11-22 |
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Country | Link |
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US (1) | US20230282760A1 (zh) |
EP (1) | EP4290593A4 (zh) |
JP (1) | JP2023549857A (zh) |
CN (1) | CN113066894B (zh) |
AU (1) | AU2021426616B2 (zh) |
WO (1) | WO2022166040A1 (zh) |
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CN114664979A (zh) * | 2022-05-26 | 2022-06-24 | 横店集团东磁股份有限公司 | 一种TOPCon钝化结构及其制备方法 |
CN116536771B (zh) * | 2023-06-30 | 2023-09-29 | 无锡松煜科技有限公司 | 一种提高硼扩散均匀度的方法 |
CN116845142A (zh) * | 2023-08-31 | 2023-10-03 | 拉普拉斯新能源科技股份有限公司 | 一种硼扩工艺及光伏电池 |
CN118380310B (zh) * | 2024-06-25 | 2024-09-10 | 合肥清电长信光伏科技有限公司 | 一种恒定流量梯度钝化的轻掺扩散工艺 |
Citations (1)
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DE102012207764A1 (de) * | 2012-05-09 | 2013-11-14 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur Bor-Dotierung von Silizium-Wafern |
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CN102437232A (zh) * | 2011-03-24 | 2012-05-02 | 无锡市佳诚太阳能科技有限公司 | 一种n型晶体硅太阳能电池用pn结制备方法 |
CN102766908B (zh) * | 2012-07-25 | 2016-02-24 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅太阳能电池的硼扩散方法 |
WO2014092649A1 (en) * | 2012-12-10 | 2014-06-19 | National University Of Singapore | A method of manufacturing a photovoltaic cell |
CN103646999A (zh) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | 一种改善太阳能电池片均匀性的磷扩散方法 |
JP2019033147A (ja) * | 2017-08-07 | 2019-02-28 | 東京応化工業株式会社 | 不純物拡散剤組成物、及び不純物拡散層の形成方法 |
CN109545893A (zh) * | 2018-11-16 | 2019-03-29 | 深圳市拉普拉斯能源技术有限公司 | 一种n型太阳能电池多步硼扩散工艺 |
CN110600558B (zh) * | 2019-07-27 | 2021-06-25 | 江苏顺风光电科技有限公司 | 一种适用于p+选择性发射极电池的硼工艺 |
CN111341649B (zh) * | 2020-02-03 | 2023-12-12 | 拉普拉斯新能源科技股份有限公司 | 一种n型太阳能电池硼扩散方法 |
CN111403271A (zh) * | 2020-03-30 | 2020-07-10 | 深圳市拉普拉斯能源技术有限公司 | 一种对硅片表面进行沉积掺杂的工艺方法 |
CN112201575A (zh) * | 2020-09-11 | 2021-01-08 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种选择性硼源掺杂方法及双面电池的制备方法 |
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2021
- 2021-02-02 CN CN202110140582.3A patent/CN113066894B/zh active Active
- 2021-05-27 EP EP21924047.0A patent/EP4290593A4/en active Pending
- 2021-05-27 WO PCT/CN2021/096259 patent/WO2022166040A1/zh active Application Filing
- 2021-05-27 JP JP2023528697A patent/JP2023549857A/ja active Pending
- 2021-05-27 AU AU2021426616A patent/AU2021426616B2/en active Active
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2023
- 2023-05-11 US US18/316,044 patent/US20230282760A1/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102012207764A1 (de) * | 2012-05-09 | 2013-11-14 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur Bor-Dotierung von Silizium-Wafern |
Also Published As
Publication number | Publication date |
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EP4290593A4 (en) | 2024-07-17 |
WO2022166040A1 (zh) | 2022-08-11 |
US20230282760A1 (en) | 2023-09-07 |
AU2021426616B2 (en) | 2024-03-28 |
AU2021426616A1 (en) | 2023-06-22 |
JP2023549857A (ja) | 2023-11-29 |
EP4290593A1 (en) | 2023-12-13 |
CN113066894A (zh) | 2021-07-02 |
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