CN113066853B - 半导体器件及制作方法 - Google Patents
半导体器件及制作方法 Download PDFInfo
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- CN113066853B CN113066853B CN202110274455.2A CN202110274455A CN113066853B CN 113066853 B CN113066853 B CN 113066853B CN 202110274455 A CN202110274455 A CN 202110274455A CN 113066853 B CN113066853 B CN 113066853B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000002955 isolation Methods 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims description 121
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- -1 boron ions Chemical class 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Abstract
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CN202210943107.4A CN115548088A (zh) | 2021-03-15 | 2021-03-15 | 一种半导体器件 |
CN202210945041.2A CN115548089A (zh) | 2021-03-15 | 2021-03-15 | 半导体器件 |
CN202110274455.2A CN113066853B (zh) | 2021-03-15 | 2021-03-15 | 半导体器件及制作方法 |
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CN202110274455.2A CN113066853B (zh) | 2021-03-15 | 2021-03-15 | 半导体器件及制作方法 |
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CN202210945041.2A Division CN115548089A (zh) | 2021-03-15 | 2021-03-15 | 半导体器件 |
CN202210943107.4A Division CN115548088A (zh) | 2021-03-15 | 2021-03-15 | 一种半导体器件 |
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CN113066853A CN113066853A (zh) | 2021-07-02 |
CN113066853B true CN113066853B (zh) | 2022-09-09 |
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CN202210945041.2A Pending CN115548089A (zh) | 2021-03-15 | 2021-03-15 | 半导体器件 |
CN202110274455.2A Active CN113066853B (zh) | 2021-03-15 | 2021-03-15 | 半导体器件及制作方法 |
CN202210943107.4A Pending CN115548088A (zh) | 2021-03-15 | 2021-03-15 | 一种半导体器件 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102915997A (zh) * | 2011-08-01 | 2013-02-06 | 台湾积体电路制造股份有限公司 | 具有高电压结终端的高电压电阻器 |
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EP1699084B1 (en) * | 1995-04-12 | 2011-05-25 | Fuji Electric Systems Co., Ltd. | High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor |
KR101078757B1 (ko) * | 2004-04-27 | 2011-11-02 | 페어차일드코리아반도체 주식회사 | 고전압 접합 커패시터 및 고전압 수평형 디모스트랜지스터를 포함하는 고전압 게이트 드라이버 집적회로 |
KR101146972B1 (ko) * | 2005-03-16 | 2012-05-22 | 페어차일드코리아반도체 주식회사 | 고내압 다이오드를 갖는 고전압 집적회로 장치 |
JP2008166431A (ja) * | 2006-12-27 | 2008-07-17 | Sony Corp | 接合型電界効果トランジスタ及びその製造方法及び半導体装置 |
CN101840935B (zh) * | 2010-05-17 | 2012-02-29 | 电子科技大学 | Soi横向mosfet器件 |
CN104835837B (zh) * | 2015-06-05 | 2017-07-28 | 杭州士兰微电子股份有限公司 | 高压半导体器件及其制造方法 |
US10079294B2 (en) * | 2016-06-28 | 2018-09-18 | Texas Instruments Incorporated | Integrated JFET structure with implanted backgate |
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2021
- 2021-03-15 CN CN202210945041.2A patent/CN115548089A/zh active Pending
- 2021-03-15 CN CN202110274455.2A patent/CN113066853B/zh active Active
- 2021-03-15 CN CN202210943107.4A patent/CN115548088A/zh active Pending
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CN102915997A (zh) * | 2011-08-01 | 2013-02-06 | 台湾积体电路制造股份有限公司 | 具有高电压结终端的高电压电阻器 |
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CN115548088A (zh) | 2022-12-30 |
CN113066853A (zh) | 2021-07-02 |
CN115548089A (zh) | 2022-12-30 |
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Inventor after: Zhu Yuanzheng Inventor after: Zhou Jincheng Inventor after: Ye Peng Inventor after: Yang Zhuo Inventor after: Liu Jingjing Inventor after: Huang Xuequan Inventor before: Zhu Yuanzheng Inventor before: Zhou Jincheng Inventor before: Ye Peng Inventor before: Yang Zhuo Inventor before: Liu Jingjing |