CN113053799B - 基座 - Google Patents

基座 Download PDF

Info

Publication number
CN113053799B
CN113053799B CN202011484053.7A CN202011484053A CN113053799B CN 113053799 B CN113053799 B CN 113053799B CN 202011484053 A CN202011484053 A CN 202011484053A CN 113053799 B CN113053799 B CN 113053799B
Authority
CN
China
Prior art keywords
disk
susceptor
shaped wafer
wafer
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011484053.7A
Other languages
English (en)
Other versions
CN113053799A (zh
Inventor
马渊雄一郎
梅田喜一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Lishennoco Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lishennoco Co ltd filed Critical Lishennoco Co ltd
Publication of CN113053799A publication Critical patent/CN113053799A/zh
Application granted granted Critical
Publication of CN113053799B publication Critical patent/CN113053799B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明提供一种应用于圆盘状晶圆的表面处理的基座，其中，所述基座具有与所述圆盘状晶圆的背面接触从而对所述圆盘状晶圆的背面进行支撑的至少三个支撑部，所述支撑部设置于所述基座的凸区域，在与所述圆盘状晶圆平行的平面视图中，所述支撑部的面积与所述凸区域的面积之比为10％以下。

Description

基座
技术领域
本公开涉及一种基座(susceptor)。
背景技术
在以往的藉由外延(epitaxial)生长在半导体等的圆盘状晶圆(wafer)的表面上形成外延膜等的覆膜的步骤中，一般是在将圆盘状晶圆放置于成膜装置内设置的基座的状态下对该圆盘状晶圆进行加热处理。
这里，如果在平坦的基座的表面上放置同样平坦的圆盘状晶圆，则气体可能夹在基座和圆盘状晶圆之间，导致圆盘状晶圆产生横向(侧向)移动。此外，如果成膜时圆盘状晶圆发生了变形，则基座和圆盘状晶圆可能在不确定的位置进行接触。该接触可能导致从圆盘状晶圆产生颗粒(particle)以阻碍外延生长，或者可能导致在圆盘状晶圆的背面上形成划痕或斑点状的痕迹。
为了防止出现如上所述的情况，专利文件1中提出了一种基座，其具备用于对圆盘状晶圆即半导体晶圆进行支撑的至少三个支撑部。
[引证文件]
[专利文件]
专利文件1：(日本)特开平7－58039号公报
发明内容
[要解决的技术问题]
然而，即使采用如上所述的基座，在藉由外延生长而进行了成膜后的圆盘状晶圆的背面上也会出现与基座的接触痕迹，这是当在后续的圆盘状晶圆的加工步骤和/或光刻(photolithography)工艺中进行聚焦时导致产品不良的主要原因。
本发明的目的在于提供一种基座，据此，可防止在藉由外延生长而进行了成膜后的圆盘状晶圆的背面上出现与基座的接触痕迹，从而可使圆盘状晶圆保持于良好的状态。
[技术方案]
提供一种应用于圆盘状晶圆的表面处理的基座，其中，所述基座具有与所述圆盘状晶圆的背面接触从而对所述圆盘状晶圆的背面进行支撑的至少三个支撑部，所述支撑部设置在所述基座的凸区域，在与所述圆盘状晶圆平行的平面视图中，所述支撑部的面积相对于所述凸区域的面积的比率为10％以下。
[有益效果]
根据本公开的基座，可防止在藉由外延生长而进行了成膜后的圆盘状晶圆的背面上产生与基座的接触痕迹。
附图说明
[图1]对本实施方式的基座从上表面进行观察时的平面模式图。
[图2]在本实施方式的基座之上放置了圆盘状晶圆的状态下的剖面模式图。
[图3]在本实施方式的变形例的基座之上放置了圆盘状晶圆的状态下的剖面模式图。
[图4]实施例中的圆盘状晶圆的背面的接触部分的光学显微镜照片。
[图5]比较例中的圆盘状晶圆的背面的接触部分的光学显微镜照片。
[符号说明]
1 基座
2 圆盘状晶圆
3 支撑部
4 凸区域
具体实施方式
以下结合附图对本发明的基座进行详细说明。需要说明的是，在以下叙述中所使用的附图中，为了使本发明的特征容易被理解，存在对特征部分进行了放大表示的情况。为此，各构成要素的尺寸比例等可能与实际不同。此外，以下说明中所例示的材质、尺寸等仅为一例。因此，本发明并不限定于以下所示的实施方式，在不改变本发明的主旨的范围内还可进行各种各样的变更和变形。
(基座)
使用图1和图2对本实施方式的基座进行说明。本实施方式的基座是对半导体等的圆盘状晶圆进行支撑的基座，例如，其可在当在基座之上放置SiC基板，并在所放置的SiC基板之上进行SiC外延膜的成膜，从而制造SiC外延晶圆时而被使用。
图1是对本实施方式的基座从与晶圆面垂直的方向(上表面)进行观察时的平面模式图，图2是在图1所示的基座中沿一点划线1A－1B进行了截断时的剖面模式图，用于表示在基座上放置了圆盘状晶圆后的状态。
本实施方式的基座1例如设置在成膜装置内，是一种在圆盘状晶圆2的表面处理等中所使用的基座，并具有与圆盘状晶圆2的背面接触从而对其进行支撑的至少三个支撑部3，该支撑部3设置于基座1的凸区域4，就相对于该凸区域4的面积的整个支撑部3的面积的比率而言，在与圆盘状晶圆2平行的平面视图中为10％以下。
需要说明的是，图1和图2所示的基座是使支撑部3为向上凸(即凸向圆盘状晶圆2)的球面形状的基座，但本实施方式的基座如图3所示其支撑部3的形状也可为长方体形状或圆柱体形状。
藉由使用这样的结构的基座1，可防止在成膜后的圆盘状晶圆2的背面上产生与基座1的接触痕迹，从而可使圆盘状晶圆2的背面保持于良好的状态。
例如，当使用以往的结构的基座在表面上进行SiC外延膜的成膜的情况下，有时会在圆盘状晶圆的背面上出现接触痕迹。圆盘状晶圆的背面上所出现的这种接触痕迹可被认为是藉由如下方式生成的，即，从基座的支撑部传递过来的热量对圆盘状晶圆进行了局部加热，该热量导致圆盘状晶圆的一部分进行了升华，由此产生了接触痕迹。
本实施方式的基座1的支撑部3设置于凸区域4。为此，就圆盘状晶圆2的背面而言，除了从支撑部3传递过来的热量之外，来自凸区域4的辐射热也会对其进行加热。即，圆盘状晶圆2的背面的与支撑部3接触的接触部分的周边也会被来自凸区域4的辐射热进行加热。此外，在与圆盘状晶圆2平行的平面视图中，整个支撑部3的面积与该凸区域4的面积之比仅为10％以下，所以可缓和接触部分的温度梯度，从而可缓和晶圆背面的局部升华。据此，可使成膜后的圆盘状晶圆2的背面保持于良好的状态。
本实施方式的基座1中，就凸区域4的面积与圆盘状晶圆2的面积的比率而言，在与圆盘状晶圆2平行的平面视图中优选位于5％～30％的范围内。藉由使用这样的结构的基座，可防止在成膜后的圆盘状晶圆2的背面上出现与基座的接触痕迹，从而可使圆盘状晶圆2的背面保持于良好的状态。
本实施方式的基座1中，支撑部3只要能够对圆盘状晶圆2进行支撑，可将支撑部3设置在基座1的上表面的任意位置，然后，如图1所示，支撑部3优选被设置为，等间隔地对圆盘状晶圆2的外周部进行支撑，并且凸区域4沿圆盘状晶圆2的外周部呈带状(环状)设置。图1中，支撑部3设置在三个位置处，并采用从基座1的中心开始的角度C(即圆心角)为120度的方式对各支撑部3进行了等间隔配置，但是，如果将支撑部3设置在四个以上的位置，则可使基座1对圆盘状晶圆2的保持更稳定。
藉由使用这样的结构的基座1，可稳定地对圆盘状晶圆2进行保持，并可防止在成膜后的圆盘状晶圆2的背面上发生与基座1的接触痕迹，由此可使圆盘状晶圆2的背面保持于良好的状态。
即，就本实施方式的基座1而言，用于放置圆盘状晶圆2的区域(即晶圆放置区域)的内侧设置有凸向圆盘状晶圆2侧的环状的凸区域4，此外，凸区域4内还设置有凸向圆盘状晶圆2侧的等间隔配置的三个支撑部3。圆盘状晶圆2可被放置在基座1所设置的三个支撑部3之上。
本实施方式的基座1中，在使用标准的直径为3英寸至6英寸左右的圆盘状晶圆2的情况下，优选为，使凸区域4的高度位于1mm～3mm的范围内，并使支撑部3的高度位于0.1mm～2mm的范围内。
藉由使用这样的结构的基座，可防止在成膜后的圆盘状晶圆2的背面上生成与基座的接触痕迹，从而可使圆盘状晶圆2的背面保持于良好的状态。
本实施方式的基座1中，在使用图1所示的环状的凸区域4的情况下，其宽度优选位于1mm～5mm的范围内。图1中，凸区域4为环状，但其也可为在多个(plural)位置处进行了分断(分割)的不连续的带状，支撑部3可设置在带状部分处。
藉由使用这样的结构的基座，可防止在成膜后的圆盘状晶圆2的背面上出现与基座的接触痕迹，从而可使圆盘状晶圆2的背面保持于良好的状态。
本实施方式的基座1可适于“成长温度位于1000℃～1800℃的范围内且300Torr以下的减压气氛中的成长速度为2～100μm/小时”的条件下的使用了SiC晶圆的外延生长。
[实施例]
(实施例)
将如图1和图2所示的直径为110mm的圆盘状的基座设置在成膜装置内。基座的晶圆放置面上设置有外径为100mm且内径为98mm的环状的高度为2.5mm的凸部。此外，在该凸部之上，采用将从基座的中央开始的120度的角度(即圆心角)作为间隔的方式，在三个位置处设置了纵横为2mm且高度为0.3mm的支撑部。
之后，在该基座之上放置圆盘状晶圆即直径为100mm的SiC晶圆，由此进行了外延膜的成膜。
具体而言，一边进行作为原料气体的硅烷气体(silane gas)和丙烷(propane)的供给，一边进行了0.5小时的基于外延生长的外延膜的成膜。
成膜后，取出SiC晶圆，并对其背面进行了确认，由此可知，基座的与支撑部的接触部分处的升华量小于10μm。图4示出了SiC晶圆的背面的接触部分的光学显微镜照片。
(比较例)
该比较例中使用了具有如下结构的基座，即，外形与实施例相同，但基座的晶圆放置面上没有设置环状的凸部，也就是说，在基座的上表面上直接设置了与实施例相同的支撑部。其他条件均与实施例相同，藉此进行了基于外延生长的外延膜的成膜。成膜后，对SiC晶圆的背面进行了确认，由此可知，与支撑部接触的接触部分处的升华量为10μm。图5示出了SiC晶圆的背面的接触部分的光学显微镜照片。
由图4和图5可知，在图5所示的比较例的SiC晶圆的背面上留有痕迹，然而，在图4所示的本实施方式即实施例的SiC晶圆的背面上则没有留下任何痕迹。
基于上述，可提供一种基座，其应用于圆盘状晶圆的表面处理，其中，所述基座具有与所述圆盘状晶圆的背面接触从而对所述圆盘状晶圆的背面进行支撑的至少三个支撑部，所述支撑部设置于所述基座的凸区域，在与所述圆盘状晶圆平行的平面视图中，所述支撑部的面积与所述凸区域的面积之比为10％以下。
所述支撑部等间隔地对所述圆盘状晶圆的外周部进行支撑，所述凸区域沿所述外周部呈带状(环状)地设置在所述基座上。
所述凸区域的高度位于1mm～3mm的范围内，所述支撑部的高度位于0.1mm～2mm的范围内。
所述支撑部的宽度位于1mm～5mm的范围内。
所述基座还具有上表面，该上表面具有用于设置所述圆盘状晶圆的晶圆设置区域，所述凸区域具有从所述上表面凸向所述圆盘状晶圆且位于所述晶圆设置区域内的环状。
所述支撑部具有凸向所述圆盘状晶圆的球面，或者具有长方体形状或圆柱体形状。
以上尽管对实施方式进行了详细说明，但并不限定于该特定的实施方式，在权利要求书记载的技术范围内，还可进行各种各样的变形和变更。

Claims (4)

1.一种基座，应用于圆盘状晶圆的表面处理，其中，
所述基座具有与所述圆盘状晶圆的背面接触从而对所述圆盘状晶圆的背面进行支撑的至少三个支撑部，
所述支撑部设置于所述基座的凸区域，
包含所述凸区域的中心轴与所述支撑部的中心轴的面中的、所述支撑部所在的一侧的所述凸区域的剖面相对于所述支撑部的中心轴左右对称，
在与所述圆盘状晶圆平行的平面视图中，所述支撑部各自的面积的总计与所述凸区域的面积之比为10％以下，
所述支撑部等间隔地对所述圆盘状晶圆的外周部进行支撑，
所述凸区域沿所述外周部呈带状地设置在所述基座上，
所述凸区域的高度位于1mm～3mm的范围内，所述支撑部的高度位于0.1mm～2mm的范围内，
所述支撑部的宽度位于1mm～5mm的范围内。
2.如权利要求1所述的基座，其中，
所述基座还具有上表面，该上表面具有用于放置所述圆盘状晶圆的晶圆放置区域，
所述凸区域具有从所述上表面凸向所述圆盘状晶圆且位于所述晶圆放置区域内的环状。
3.如权利要求2所述的基座，其中，
所述支撑部具有凸向所述圆盘状晶圆的球面。
4.如权利要求2所述的基座，其中，
所述支撑部具有长方体形状或圆柱体形状。
CN202011484053.7A 2019-12-26 2020-12-16 基座 Active CN113053799B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019237349A JP7400461B2 (ja) 2019-12-26 2019-12-26 サセプタ
JP2019-237349 2019-12-26

Publications (2)

Publication Number Publication Date
CN113053799A CN113053799A (zh) 2021-06-29
CN113053799B true CN113053799B (zh) 2024-04-26

Family

ID=76507949

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011484053.7A Active CN113053799B (zh) 2019-12-26 2020-12-16 基座

Country Status (3)

Country Link
US (1) US20210202294A1 (zh)
JP (1) JP7400461B2 (zh)
CN (1) CN113053799B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0871207A1 (de) * 1997-03-26 1998-10-14 SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung AG Verfahren und Vorrichtung zum einseitigen Bearbeiten scheibenförmiger Gegenstände
US20020043337A1 (en) * 1997-11-03 2002-04-18 Goodman Matthew G. Low mass wafer support system
TWI284955B (en) * 2001-09-27 2007-08-01 Shinetsu Handotai Kk Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
WO2016174859A1 (ja) * 2015-04-27 2016-11-03 株式会社Sumco サセプタ及びエピタキシャル成長装置
CN108140574A (zh) * 2015-10-06 2018-06-08 东洋炭素株式会社 单晶碳化硅基板的加热处理容器及蚀刻方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4112996B2 (ja) 2003-01-28 2008-07-02 大日本スクリーン製造株式会社 基板処理装置
US7646581B2 (en) * 2006-01-31 2010-01-12 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck
JP2010153467A (ja) 2008-12-24 2010-07-08 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP6602145B2 (ja) 2015-10-13 2019-11-06 大陽日酸株式会社 基板載置台及び気相成長装置
CN112331609B (zh) 2020-10-26 2023-12-22 北京北方华创微电子装备有限公司 半导体工艺设备中的加热基座及半导体工艺设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0871207A1 (de) * 1997-03-26 1998-10-14 SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung AG Verfahren und Vorrichtung zum einseitigen Bearbeiten scheibenförmiger Gegenstände
US20020043337A1 (en) * 1997-11-03 2002-04-18 Goodman Matthew G. Low mass wafer support system
TWI284955B (en) * 2001-09-27 2007-08-01 Shinetsu Handotai Kk Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
WO2016174859A1 (ja) * 2015-04-27 2016-11-03 株式会社Sumco サセプタ及びエピタキシャル成長装置
CN108140574A (zh) * 2015-10-06 2018-06-08 东洋炭素株式会社 单晶碳化硅基板的加热处理容器及蚀刻方法

Also Published As

Publication number Publication date
US20210202294A1 (en) 2021-07-01
JP7400461B2 (ja) 2023-12-19
JP2021106230A (ja) 2021-07-26
CN113053799A (zh) 2021-06-29

Similar Documents

Publication Publication Date Title
CN112053991B (zh) 热处理基座
EP2037485B1 (en) Fabrication apparatus and fabrication method of semiconductor device produced by heating a substrate
TWI488258B (zh) 增強之晶圓載體
US20060065196A1 (en) Susceptor
JPH0758041A (ja) サセプタ
KR101992564B1 (ko) 열 특성이 개선된 웨이퍼 서셉터
EP2748843B1 (en) Susceptor
KR20170137917A (ko) 에피택셜 성장 장치, 에피택셜 웨이퍼의 제조 방법 및 에피택셜 성장 장치용 리프트 핀
CN107251196B (zh) 氮化物半导体模板及其制造方法、以及外延片
KR20170134216A (ko) 기판유지장치 및 그 제조방법
KR20170023792A (ko) 서셉터 및 그 제조 방법
KR20180003641A (ko) 고 성장률 epi 챔버를 위한 열 차폐 링
CN107407004B (zh) 升降销及其制造方法
CN111295737B (zh) 基座、外延生长装置、外延硅晶片的制造方法及外延硅晶片
CN113053799B (zh) 基座
CN112789719A (zh) 基座
JP4223455B2 (ja) サセプタ
JP2008091615A (ja) 被加工処理基板、その製造方法およびその加工処理方法
US20160348276A1 (en) Process chamber with reflector
TW201907050A (zh) 承載盤、磊晶基板的製造方法及磊晶基板
KR20200071276A (ko) 대구경 웨이퍼용 웨이퍼 캐리어
JP7151664B2 (ja) エピタキシャルウェーハの製造方法
KR102040378B1 (ko) 지그를 이용한 반도체 제조용 부품의 제조방법 및 제조장치
CN112011826A (zh) 在晶圆的正面上沉积外延层的方法和实施该方法的装置
JP4228347B2 (ja) ウェーハ支持体

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Tokyo, Japan

Applicant after: Lishennoco Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: Showa electrical materials Co.,Ltd.

CB02 Change of applicant information
TA01 Transfer of patent application right

Effective date of registration: 20230718

Address after: Tokyo, Japan

Applicant after: Showa electrical materials Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: SHOWA DENKO Kabushiki Kaisha

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant