CN113035956A - 一种具有凹陷沟槽的场效应晶体管 - Google Patents

一种具有凹陷沟槽的场效应晶体管 Download PDF

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CN113035956A
CN113035956A CN202110219297.0A CN202110219297A CN113035956A CN 113035956 A CN113035956 A CN 113035956A CN 202110219297 A CN202110219297 A CN 202110219297A CN 113035956 A CN113035956 A CN 113035956A
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柴力
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    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
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Abstract

本发明系提供一种具有凹陷沟槽的场效应晶体管,包括衬底,衬底上层叠有外延层、沟道掺杂层、源极层和源极金属层,衬底下设有漏极金属层,外延层中设有贯穿沟道掺杂层、源极层和源极金属层的凹槽;凹槽的底部设有位于外延层中的保护层,保护层呈U形包裹于凹槽的底部;凹槽中填充有栅极电介质层,栅极电介质层中设有栅极沉积层,栅极沉积层的底部设有抗击层,栅极沉积层中设有栅极金属层,栅极金属层、栅极沉积层和栅极电介质层的顶面共面。本发明栅极区域对导电沟道的调节迅速且可靠,具有低介电常数的抗击层具有良好的强电场抵抗能力,保护层与外延层之间形成的PN结可削弱抗击层处形成的电场,整体结构耐压性能好。

Description

一种具有凹陷沟槽的场效应晶体管
技术领域
本发明涉及场效应晶体管,具体公开了一种具有凹陷沟槽的场效应晶体管。
背景技术
场效应晶体管属于电压控制型半导体器件,具有输入电阻高、噪声小、功耗低、动态范围大、易于集成、没有二次击穿、安全工作区域宽等优点,场效应晶体管可应用于开关器件。
如图1所示,传统的场效应晶体管为以下结构:在衬底中设置两个间隔的漏极和源极,栅极设置于漏极和源极之间的上方,栅极与衬底之间设置金属氧化物层以确保绝缘性能,衬底分别与漏极和源极的导电型极性相反,漏极和源极之间的衬底中可形成导电沟道,但这种结构的场效应晶体管阻抗较大,为降低阻抗,部分场效应晶体管设置栅极陷入到衬底中,但这种场效应晶体管的栅极容易被击穿而导致失效。
发明内容
基于此,有必要针对现有技术问题,提供一种具有凹陷沟槽的场效应晶体管,具有较高的抗击穿电压,整体结构稳定可靠,使用寿命长。
为解决现有技术问题,本发明公开一种具有凹陷沟槽的场效应晶体管,包括衬底,衬底上依次层叠有外延层、沟道掺杂层、源极层和源极金属层,沟道掺杂层和源极层的厚度之和为D,衬底下设有漏极金属层,外延层中设有贯穿沟道掺杂层、源极层和源极金属层的凹槽;
凹槽的底部设有位于外延层中的保护层,保护层呈U形包裹于凹槽的底部,保护层与沟道掺杂层之间形成有间隔;
凹槽中填充有栅极电介质层,栅极电介质层中设有栅极沉积层,栅极沉积层的底部设有抗击层,栅极沉积层中设有栅极金属层,栅极金属层、栅极沉积层和栅极电介质层的顶面共面,栅极金属层的高度为H,H>D;
栅极电介质层的介电常数大于10,抗击层的介电常数小于4;
衬底、外延层和源极层均为掺杂有第一导电型离子的半导体材料层,沟道掺杂层和保护层均为掺杂有第二导电型离子的半导体材料层,第一导电型和第二导电型的极性相反。
进一步的,衬底、外延层和源极层均为掺杂有磷离子的单晶硅层,沟道掺杂层和保护层均为掺杂有硼离子的单晶硅层。
进一步的,保护层的宽度为R,凹槽的宽度为L,1.2L≤R≤1.8L。
进一步的,栅极电介质层为氧化镧层或二氧化钛层。
进一步的,栅极沉积层为氮化钛层或氮化钽层。
进一步的,栅极沉积层的底部为向下收窄的圆台状。
进一步的,抗击层为二氧化硅层或PTFE层。
进一步的,栅极金属层为钨层或铝层。
本发明的有益效果为:本发明公开一种具有凹陷沟槽的场效应晶体管,通过将栅极区域设置在凹槽中,可有效降低场效应晶体管的阻抗,栅极区域对导电沟道的调节迅速且可靠,此外,具有低介电常数的抗击层具有良好的强电场抵抗能力,可有效提高抗击穿电压,保护层与外延层之间形成的PN结可削弱抗击层处形成的电场,能够进一步提高抗击穿电压,整体结构耐压性能好、稳定性强,使用寿命长。
附图说明
图1为传统场效应晶体管的结构示意图。
图2为本发明的结构示意图。
附图标记:衬底10、外延层11、沟道掺杂层12、源极层13、源极金属层14、漏极金属层15、凹槽20、保护层30、栅极电介质层40、栅极沉积层50、抗击层51、栅极金属层60。
具体实施方式
为能进一步了解本发明的特征、技术手段以及所达到的具体目的、功能,下面结合附图与具体实施方式对本发明作进一步详细描述。
参考图2。
本发明实施例公开一种具有凹陷沟槽的场效应晶体管,包括衬底10,衬底10上沿纵向依次层叠有外延层11、沟道掺杂层12、源极层13和源极金属层14,沟道掺杂层12的厚度和源极层13的厚度之和为D,衬底10下设有漏极金属层15,外延层11中设有依次贯穿沟道掺杂层12、源极层13和源极金属层14的凹槽20,凹槽20的开口向上;
凹槽20的底部设有延展位于外延层11中的保护层30,保护层30呈U形包裹于凹槽20的底部,保护层30与沟道掺杂层12之间形成有间隔,能够避免保护层30对狗到处造成影响;
凹槽20中的结构都属于栅极区域,凹槽20中填充有栅极电介质层40,栅极电介质层40中设有贯穿其顶面的栅极沉积层50,栅极沉积层50能够有效提高场效应晶体管中栅极区域的储电能力,从而提高场效应晶体管的性能,栅极沉积层50的底部设有抗击层51,抗击层51位于栅极沉积层50与栅极电介质层40之间,栅极沉积层50中设有贯穿其顶面的栅极金属层60,栅极金属层60的顶面、栅极沉积层50的顶面和栅极电介质层40的顶面共面,栅极金属层60的纵向高度为H,H>D,确保栅极金属层60能够配合栅极沉积层50对沟道掺杂层12中的导电沟道实现可靠的调节;
栅极电介质层40的介电常数大于10,使用高介电常数的材料制作栅极电介质层40,能够提高对整体栅极区域对沟道掺杂层12中导电沟道调节的响应速度,栅极对导电沟道的调节效果好,且栅极金属层60分别与外延层11、沟道掺杂层12、源极层13的绝缘效果可靠,抗击层51的介电常数小于4,使用低介电常数的材料制作抗击层51,能够有效提高该区域的强电场抵抗能力,耐压性能好,抗击穿能力好,可有效提高场效应晶体管的可靠性;
栅极沉积层50为功函数金属层,衬底10、外延层11和源极层13均为掺杂有第一导电型离子的半导体材料层,沟道掺杂层12和保护层30均为掺杂有第二导电型离子的半导体材料层,第一导电型和第二导电型的极性相反,即当第一导电型为p型时第二导电型则为n型,当第一导电型为n型时第二导电型则为p型,保护层30与外延层11之间形成有PN结,能够有效削弱抗击层51区域的电场,从而有效提高场效应晶体管的抗击穿电压,能够有效避免场效应晶体管的栅极区域被击穿。优选地,外延层11的掺杂浓度大于衬底10的掺杂浓度。
本发明中沟道掺杂层12中能够形成纵向的导电沟道,从而令源极金属层14和漏极金属层15实现导通,而栅极沉积层50配合具有高介电常数的栅极电介质层40,能够有效提高对导电沟道的调节效果及调节的可靠性;栅极沉积层50末端的设置具有低介电常数的抗击层51,具有优异的强电场抵抗能力,场效应晶体管耐压性能好、抗击穿能力强;此外,具备相反极性的保护层30与外延层11之间形成有PN结,能够有效削弱抗击层51区域的电场,从而进一步提高场效应晶体管的抗击穿性能。
在本实施例中,衬底10、外延层11和源极层13均为掺杂有磷离子的单晶硅层,掺杂有磷离子的单晶硅层的导电型为n型,沟道掺杂层12和保护层30均为掺杂有硼离子的单晶硅层,掺杂硼离子的单晶硅层的导电型为p型;或衬底10、外延层11和源极层13均掺杂有硼离子的单晶硅层,沟道掺杂层12和保护层30均为掺杂有磷离子的单晶硅层。
在本实施例中,保护层30的横向宽度为R,凹槽20的横向宽度为L,1.2L≤R≤1.8L,能够有效确保保护层30对栅极电介质层40底部的包覆效果,确保该区域所形成的PN结的跨越范围足够大,从而有效提高其对抗击层51区域电场的削弱能力。
在本实施例中,栅极电介质层40为氧化镧层或二氧化钛层,二氧化钛的介电常数为48。
在本实施例中,栅极沉积层50为氮化钛层或氮化钽层。
在本实施例中,栅极沉积层50的底部为向下收窄的圆台状,即栅极沉积层50的截面形状为上底位于下方的等腰梯形,栅极沉积层50底部收窄的区域配合抗击层51能够有效提高电场分布的均匀性,从而提高场效应晶体管中栅极区域的抗击穿能力。
在本实施例中,抗击层51为二氧化硅层或PTFE层,二氧化硅的介电常数为3.9,PTFE全称聚四氟乙烯,介电常数为2.55。
在本实施例中,栅极金属层60为钨层或铝层,钨和铝的电阻都较低,能够有效提高栅极金属层60的导电性能,从而有效提高场效应晶体管的性能,漏极金属层15和源极金属层14也可以为钨层或铝层。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。

Claims (8)

1.一种具有凹陷沟槽的场效应晶体管,其特征在于,包括衬底(10),所述衬底(10)上依次层叠有外延层(11)、沟道掺杂层(12)、源极层(13)和源极金属层(14),所述沟道掺杂层(12)和源极层(13)的厚度之和为D,所述衬底(10)下设有漏极金属层(15),所述外延层(11)中设有贯穿所述沟道掺杂层(12)、所述源极层(13)和所述源极金属层(14)的凹槽(20);
所述凹槽(20)的底部设有位于所述外延层(11)中的保护层(30),所述保护层(30)呈U形包裹于所述凹槽(20)的底部,所述保护层(30)与所述沟道掺杂层(12)之间形成有间隔;
所述凹槽(20)中填充有栅极电介质层(40),所述栅极电介质层(40)中设有栅极沉积层(50),所述栅极沉积层(50)的底部设有抗击层(51),所述栅极沉积层(50)中设有栅极金属层(60),所述栅极金属层(60)、所述栅极沉积层(50)和所述栅极电介质层(40)的顶面共面,所述栅极金属层(60)的高度为H,H>D;
所述栅极电介质层(40)的介电常数大于10,所述抗击层(51)的介电常数小于4;
所述衬底(10)、所述外延层(11)和所述源极层(13)均为掺杂有第一导电型离子的半导体材料层,所述沟道掺杂层(12)和所述保护层(30)均为掺杂有第二导电型离子的半导体材料层,第一导电型和第二导电型的极性相反。
2.根据权利要求1所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述衬底(10)、所述外延层(11)和所述源极层(13)均为掺杂有磷离子的单晶硅层,所述沟道掺杂层(12)和所述保护层(30)均为掺杂有硼离子的单晶硅层。
3.根据权利要求1所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述保护层(30)的宽度为R,所述凹槽(20)的宽度为L,1.2L≤R≤1.8L。
4.根据权利要求1所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述栅极电介质层(40)为氧化镧层或二氧化钛层。
5.根据权利要求1所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述栅极沉积层(50)为氮化钛层或氮化钽层。
6.根据权利要求1或5所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述栅极沉积层(50)的底部为向下收窄的圆台状。
7.根据权利要求1所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述抗击层(51)为二氧化硅层或PTFE层。
8.根据权利要求1所述的一种具有凹陷沟槽的场效应晶体管,其特征在于,所述栅极金属层(60)为钨层或铝层。
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