CN113035740B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- CN113035740B CN113035740B CN202011399107.XA CN202011399107A CN113035740B CN 113035740 B CN113035740 B CN 113035740B CN 202011399107 A CN202011399107 A CN 202011399107A CN 113035740 B CN113035740 B CN 113035740B
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- exhaust
- gasket
- chamber
- processing apparatus
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000012545 processing Methods 0.000 title claims abstract description 53
- 239000012530 fluid Substances 0.000 claims abstract description 10
- 238000004891 communication Methods 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 15
- 230000000994 depressogenic effect Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H01L21/203—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving uniformity of thickness of a thin film deposited on a substrate or adjusting thickness of a thin film by adjusting a length of an exhaust path through which exhaust gas is exhausted from each of a plurality of stations when the plurality of stations are provided in a chamber. The substrate processing apparatus includes: a chamber providing a plurality of processing spaces for processing a substrate; an exhaust port connected to the base of the chamber to exhaust the exhaust gas of the processing space to the outside of the chamber: a pair of extending groove portions which are in fluid communication with the exhaust port and are formed at least in part along the outer periphery of a plurality of lower concave portions formed downward at the base of the chamber; and a gasket assembly disposed in the undercut portion and in fluid communication with the extension groove portion and capable of adjusting a length of an exhaust path of the exhaust gas.
Description
Technical Field
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus including a liner assembly for exhausting exhaust gas from each of a plurality of work stations when the plurality of work stations are provided in a chamber.
Background
In general, a substrate processing apparatus performs processes such as vapor deposition, etching, and cleaning on a substrate in a chamber, and recently, a technique for processing a plurality of substrates in a single chamber has been developed in order to improve productivity of the substrate processing apparatus.
Fig. 10 is a plan view of a substrate processing apparatus according to the related art. As shown in fig. 10, recesses 12A, 12B, 12C, 12D corresponding to a plurality of substrates (not shown) are provided in the base of the chamber 10. The substrate is mounted on substrate support portions (not shown) provided in the recessed portions 12A, 12B, 12C, and 12D, respectively, and the substrate is processed.
In this case, during the process of the substrate or when the process is finished, the exhaust gas is discharged to the outside of the chamber 10 through the exhaust ports 14A, 14B, 14C, 14D provided at the lower surface of the chamber 10. At this time, in order to improve the space utilization under the chamber 10 and simplify the structure, the exhaust ports 14A, 14B, 14C, 14D are respectively provided between the adjacent concave portions 12A, 12B, 12C, 12D.
When the exhaust ports 14A, 14B, 14C, and 14D are arranged as described above, the exhaust gas flows through the respective recessed portions 12A, 12B, 12C, and 12D along the arrows shown in the drawing, and is discharged to the exhaust ports 14A, 14B, 14C, and 14D.
However, the substrate processing apparatus of the conventional technology has the following disadvantages: the flow direction of the process gas flowing toward the exhaust ports 14A, 14B, 14C, 14D tends to be deviated on the upper surface of the substrate disposed in each of the concave portions 12A, 12B, 12C, 12D, and uniformity of the thin film deposited on the substrate is lowered.
Disclosure of Invention
In order to solve the above-described problems, an object of the present invention is to provide a substrate processing apparatus capable of adjusting a length of an exhaust path through which exhaust gas is exhausted from each station when a plurality of stations are provided in a chamber.
Further, an object of the present invention is to provide a substrate processing apparatus capable of improving uniformity of thickness of a thin film deposited on a substrate or adjusting thickness of the thin film.
The above object of the present invention is achieved by a substrate processing apparatus comprising: a chamber providing a plurality of processing spaces for processing a substrate; an exhaust port connected to the base of the chamber to exhaust the exhaust gas of the processing space to the outside of the chamber: a pair of extending groove portions which are in fluid communication with the exhaust port and are formed at least in part along the outer periphery of a plurality of lower concave portions formed downward at the base of the chamber; and a gasket assembly disposed in the undercut portion and in fluid communication with the extension groove portion and capable of adjusting a length of an exhaust path of the exhaust gas.
Here, the exhaust path may include: and a variable exhaust path formed in at least a part of the section of the extension groove, the variable exhaust path being a section between an exhaust port and the exhaust port in the gasket assembly, the gasket assembly adjusting a length of the variable exhaust path.
On the other hand, the variable exhaust path may be formed in a space between the outer peripheral surface of the gasket assembly and the extension groove portion.
In addition, the pad assembly may include: a first gasket provided in the lower recess portion, respectively, and having a plurality of exhaust grooves arranged on a circumference thereof for radially exhausting exhaust gas; and a second gasket disposed in the lower recess portion at a predetermined interval to the outside of the first gasket, and forming an exhaust passage through which exhaust gas moves, and a pair of exhaust ports formed in the second gasket.
Further, the second gasket may be rotatably disposed inside the lower recess portion, and a length of an exhaust path of the exhaust gas discharged through the exhaust port may be adjusted.
The second gasket may include a base portion and a side wall portion formed upward from an edge of the base portion, and the exhaust port may extend from the side wall portion to a part of the base portion.
On the other hand, the pair of extended groove portions may be formed to be symmetrical about a central portion of the depressed portion.
In this case, the exhaust ports may be connected to the extension groove portions of the adjacent depressed portions, respectively.
In another aspect, the exhaust port may be connected asymmetrically with respect to a central portion of the depressed portion.
According to the present invention having the above-described configuration, when a plurality of work stations are provided in the chamber, the length of the exhaust path through which the exhaust gas is discharged from each work station can be adjusted. Thus, the thickness uniformity of the thin film deposited on the substrate can be improved or the thickness of the thin film can be adjusted.
Drawings
Fig. 1 is a side sectional view showing a state after a substrate support portion is lowered in a substrate processing apparatus according to an embodiment of the present invention;
fig. 2 is a side sectional view showing a state after the substrate supporting part is lifted up in fig. 1;
fig. 3 is a perspective view showing the inside of the chamber body with the chamber cover opened in fig. 1;
fig. 4 is a plan view showing a state in which an exhaust port is connected to a lower concave portion of the chamber;
fig. 5 is a partially exploded perspective view showing a first gasket and a second gasket;
fig. 6 is a partial sectional view showing a state in which the first and second liners are coupled to the chamber;
fig. 7 to 9 are top views of a rotation state of the second gasket;
fig. 10 is a plan view of a substrate processing apparatus according to the related art.
(description of the reference numerals)
100: chamber chamber
150: chamber cover
130: chamber body
200: spray head
400: substrate supporting part
1000: substrate processing apparatus
150A, 150B: base plate
500A, 500B: first gasket
510A, 510B: exhaust groove
520A, 520B: annular exhaust flow path
600A, 600B: second gasket
610A, 610B: exhaust port
Detailed Description
The substrate processing apparatus 1000 according to the embodiment of the present invention is described in detail below with reference to the drawings.
Fig. 1 is a side sectional view showing a state in which the substrate support parts 400A, 400B are lowered in the substrate processing apparatus 1000 according to an embodiment of the present invention, fig. 2 is a side sectional view showing a state in which the substrate support parts 400A, 400B are raised during the process of processing the substrate in fig. 1, and fig. 3 is a perspective view showing the inside of the chamber body 130 in fig. 1 with the chamber lid 115 opened.
Referring to fig. 1 to 3, the substrate processing apparatus 1000 may include: a chamber 100 including a chamber body 130 and a chamber cover 115 closing an upper portion of an opening of the chamber body 130; a plurality of upper recesses 210A, 210B formed at a predetermined distance from each other in the chamber cover 115; a plurality of showerhead 200A, 200B provided in the upper recess 210A, 210B of the chamber lid 115 to supply process gas toward the substrate; and a plurality of substrate supporting parts 400A and 400B provided below the showerhead 200A and 200B to support the substrate, and provided to be movable up and down to be inserted into the upper concave parts 210A and 210B, thereby forming a processing space between the substrate supporting parts 400A and 400B and the showerhead 200A and 200B.
The chamber 100 provides a plurality of processing spaces inside in which various processes such as vapor deposition process can be performed on the substrate.
For example, the chamber 100 may include a chamber body 130 having an opened upper side and a chamber cover 115 closing the upper side of the chamber body 130.
The chamber body 130 may include a door (not shown) for feeding or discharging the substrate. Further, exhaust units 700A, 700B, 700C, 700D for exhausting residual gas in the chamber 100 may be provided below the chamber body 130. As shown in fig. 3, when 4 processing spaces are provided inside the chamber 100, the exhaust units 700A, 700B, 700C, 700D may be configured in the number corresponding to the number of the processing spaces. The exhaust units 700A, 700B, 700C, 700D are described in detail later.
On the other hand, in the present invention, a plurality of substrate supporting portions 400A and 400B and shower heads 200A and 200B may be provided inside the chamber 100. The present invention is shown to have 4 substrate support portions 400A, 400B and showerhead 200A, 200B, but is not limited thereto and may have an appropriate number of substrate support portions and showerhead. However, fig. 1 corresponds to a side view, and only 2 of the heads and the substrate support portions are shown, and the heads and the substrate support portions are omitted in fig. 3. When the substrate support sections 400A and 400B and the heads 200A and 200B are provided, a larger number of substrates can be processed at a time, and the production efficiency (throughput) can be improved.
The substrate support portions 400A and 400B are disposed below the chamber body 130 so as to be movable up and down. The substrate support portions 400A and 400B are provided with a heater (not shown) or the like, and the substrates can be heated when the substrates are mounted on the upper surfaces of the substrate support portions 400A and 400B. Support bars 410A and 410B are formed to extend below the centers of the substrate support portions 400A and 400B, and the substrate support portions 400A and 400B are moved up and down by lifting and lowering the support bars 410A and 410B.
On the other hand, the chamber cover 115 serves to seal the upper side of the opening of the chamber body 130.
The chamber lid 115 is provided with shower heads 200A and 200B for supplying process gas to the substrates.
In the case of the present embodiment, a plurality of upper recesses 210A, 210B may be disposed at a predetermined distance from each other in the chamber cover 115. For example, when the upper concave portions 210A and 210B are provided in 4, the chamber cover 115 is arranged in a quadrangular shape. The arrangement shape is merely an example, and the arrangement shape of the upper concave portion may be appropriately deformed. The showerhead 200A, 200B is disposed in the upper recess 210A, 210B of the chamber lid 115.
For example, the upper concave portions 210A and 210B may be formed in the chamber cover 115, and the heads 200A and 200B may be disposed inside the upper concave portions 210A and 210B.
In this way, if the heads 200A and 200B are disposed inside the upper recesses 210A and 210B, interference between the substrates and the heads 200A and 200B during transfer of the substrates inside the chamber 100 can be prevented.
Before the substrate is processed, the substrate support portions 400A and 400B are raised toward the upper concave portions 210A and 210B as shown in fig. 2. At this time, the upper surfaces of the substrate supporting parts 400A and 400B may be raised to the same height as the lower surface of the chamber lid 115 or further raised to a predetermined height. Accordingly, a processing space for performing a processing process on the substrate is provided by the lower surfaces of the showerhead 200A, 200B, the inner sidewalls of the upper recesses 210A, 210B, and the upper surfaces of the substrate support portions 400A, 400B.
On the other hand, the processing space is not a completely closed space, and a gap 212 of a predetermined size is provided between the side surfaces of the substrate support portions 400A and 400B and the inner side walls of the upper recessed portions 210A and 210B. For example, the substrate support portions 400A and 400B may be manufactured to have an outer diameter smaller than an inner diameter of the upper concave portions 210A and 210B by a predetermined size.
Accordingly, the process gas supplied toward the substrate through the showerhead 200A, 200B passes through the gap 212 after passing through the upper surface of the substrate and is exhausted to the outside of the chamber 100 through the lower exhaust unit 700A, 700B, 700C, 700D.
The base 132 of the chamber 100 may include exhaust units 700A, 700B, 700C, and 700D for exhausting residual gas in the processing space.
For example, the exhaust units 700A, 700B, 700C, 700D may include: an exhaust port 160A connected to the base 132 of the chamber 100 to exhaust the exhaust gas of the process space to the outside of the chamber 100; a pair of extended groove portions 134A, 135A, which are in fluid communication with the exhaust port 160A, and are formed at least in part along the outer periphery of a plurality of lower concave portions 140A, 140B formed downward in the base 132 of the chamber 100; and a gasket assembly 900A (see fig. 5) disposed in the lower recess portions 140A, 140B and in fluid communication with the extension groove portions 134A, 135A, and capable of adjusting a length of an exhaust path of the exhaust gas.
On the other hand, fig. 4 is a plan view showing a state in which the exhaust ports 160A, 160B, 160C, 160D are connected to the lower concave portions 140A, 140B, 140C, 140D of the chamber body 130.
Referring to fig. 4, in order to simplify the structure under the chamber 100, the exhaust ports 160A, 160B, 160C, 160D may be formed between the lower concave parts 140A, 140B, 140C, 140D in a minimum number at positions where the exhaust gas can be commonly discharged. For example, as shown, when 4 lower concave portions 140A, 140B, 140C, 140D are provided, the exhaust ports 160A, 160B, 160C, 160D may be provided 4 between the lower concave portions 140A, 140B, 140C, 140D. In addition, in order to improve the ease of processing in manufacturing the chamber 100, it is preferable to form at the shortest distance between adjacent depressed portions 140A, 140B, 140C, 140D. Accordingly, the exhaust ports 160A, 160B, 160C, 160D are connected to be asymmetric with respect to the central portion of each of the lower concave portions 140A, 140B, 140C, 140D.
In the case of configuring the exhaust port 160A as described above, the description will be given centering on the first exhaust unit 700A disposed in the first processing space.
Referring to fig. 1 to 3, the lower recess 140A may be formed at the base 132 of the chamber 100. The lower concave portion 140A may be formed corresponding to the upper concave portion 210A described above.
The support rod 410A of the substrate support part 400A may be disposed to penetrate along the central portion of the lower recess part 140A so as to be movable up and down.
On the other hand, a spacer assembly 900A (see fig. 5) may be provided inside the lower recess 140A.
Fig. 5 is an exploded perspective view of the first gasket 500A and the second gasket 600A, and fig. 6 is a partial sectional view showing a state in which the first gasket 500A and the second gasket 600A are coupled to the lower concave portion 140A.
Referring to fig. 3 to 6, the pad assembly 900A may include: a first gasket 500A provided in the lower recess 140A, and a plurality of exhaust grooves 510A for radially exhausting exhaust gas are arranged on the circumference; and a second gasket 600A disposed at a predetermined interval to the outside of the first gasket 500A in the lower recess 140A, wherein an exhaust passage 520A through which exhaust gas moves is formed between the second gasket 600A and the first gasket 500A, and a pair of exhaust ports 610A and 611A are formed in the second gasket 600A.
In this case, the first gasket 500A may include a flange portion 512A and an extension portion 514A extending downward from the flange portion 512A. In this case, the lower side of the first gasket 500A, i.e., the lower side of the extension 514A, may have an open shape.
The base 132 may include a base plate 150A, and the base plate 150A may have a stepped portion 152A formed therein so that the first gasket 500A may be inserted into and disposed in the lower recess 140A.
That is, the flange portion 512A of the first gasket 500A may be mounted to and disposed on the stepped portion 152A. In this case, the flange portion 512A of the first gasket 500A does not protrude upward.
A plurality of vent grooves 510A may be formed in the extension 514A. The vent groove 510A is disposed along the extension 514A. At this time, when the first gasket 500A is viewed in a plane, the air discharge grooves 510A are radially arranged around the center of the first gasket 500A. Accordingly, the exhaust gas discharged from the first processing space may be dispersed in the circumferential direction of the substrate disposed in the first processing space.
On the other hand, the second gasket 600A is disposed in the lower recess 140A to form an annular exhaust flow path 520A for exhaust gas movement between the first gasket 500A. That is, the second gasket 600A is attached to the lower concave portion 140A, and the first gasket 500A is disposed above the second gasket 600A. At this time, an annular space corresponding to the interval between the first gasket 500A and the second gasket 600A corresponds to the annular exhaust flow path 520A through which the exhaust gas discharged through the exhaust groove 510A moves.
For example, the second gasket 600A may include a base portion 614A and a side wall portion 612A formed upward from an edge of the base portion 614A. A through hole 616A through which the support rod 410A of the substrate support 400A passes is formed in the center of the base 614A.
In this case, the sidewall portion 612A of the second gasket 600A is configured to have a larger diameter than the extension portion 514A of the first gasket 500A such that the extension portion 514A of the first gasket 500A is disposed inside the sidewall portion 612A of the second gasket 600A when the second gasket 600A and the first gasket 500A are coupled.
Accordingly, an exhaust flow path 520A is formed between the sidewall portion 612A of the second gasket 600A, the base portion 614A of the second gasket 600A, the extension portion 514A of the first gasket 500A, and the flange portion 512A of the first gasket 500A.
On the other hand, a pair of exhaust ports 610A, 611A for exhausting the exhaust gas moving along the exhaust flow path 520A may be formed in the second gasket 600A. The pair of exhaust ports 610A, 611A may be formed to be symmetrical about a central portion of the base portion 614A. However, the arrangement of the exhaust ports 610A and 611A is merely illustrative, and it is needless to say that the exhaust ports may not be arranged so as to be symmetrical about the center of the base 614A.
The exhaust ports 610A, 611A may extend to a portion of the base portion 614A as shown in fig. 5, rather than being formed only in the side wall portion 612A. In this way, if the exhaust ports 610A and 611A are further extended to a part of the base 614A, the exhaust gas can be discharged more smoothly toward the exhaust port 160A located below while minimizing the generation of vortex when the exhaust gas is discharged from the exhaust ports 610A and 611A.
On the other hand, the lower recess 140A of the base 132 of the chamber 100 may include a pair of extension grooves 134A, 135A formed along at least a part of the outer circumference of the lower recess 140A and in fluid communication with the exhaust ports 610A, 611A.
The pair of extended groove portions 134A, 135A may be formed to be symmetrical about a central portion of the lower concave portion 140A.
In this case, the exhaust path may include variable exhaust paths 136A and 137A, the variable exhaust paths 136A and 137A may be formed in at least a part of the extension groove portions 134A and 135A, and may be a section between exhaust ports 610A and 611A of the gasket assembly 900A, which exhaust the exhaust gas is discharged, and the exhaust port 160A, and the gasket assembly 900A may be configured to adjust the lengths of the variable exhaust paths 136A and 137A.
For example, the space between the outer peripheral surface of the liner assembly 900A and the extended groove portions 134A, 135A may form the variable exhaust paths 136A, 137A.
When the second gasket 600A is disposed inside the depressed portion 140A, the variable exhaust paths 136A, 137A are formed in the space corresponding to the gap between the outer peripheral surface of the second gasket 600A and the extension groove portions 134A, 135A.
Accordingly, exhaust gas discharged through the exhaust ports 610A, 611A of the second gasket 600A is discharged along the variable exhaust paths 136A, 137A between the second gasket 600A and the extension groove portions 134A, 135A. In this case, the exhaust ports 160A are connected to the variable exhaust paths 136A, 136B (see fig. 1) of the adjacent depressed portions 140A, respectively. Accordingly, the variable exhaust paths 136A and 136B are connected to the exhaust port 160A, and the exhaust gas moving along the variable exhaust paths 136A and 136B is discharged to the outside through the exhaust port 160A.
On the other hand, in the present embodiment, the second gasket 600A is rotatably disposed inside the lower concave portion 140A, and the uniformity of the thin film deposited on the substrate can be adjusted by adjusting the lengths of the variable exhaust paths 136A and 137A of the exhaust gas discharged to the outside of the substrate to be different from each other. Hereinafter, description will be made with reference to fig. 7 to 9.
Fig. 7 shows a state in which the second gasket 600A is rotated and the exhaust ports 610A, 611A of the second gasket 600A are arranged at the circumferential center portions of the extension groove portions 134A, 135A or the variable exhaust paths 136A, 137A. In this case, the exhaust ports 160A, 160B may be connected asymmetrically with respect to the central portion of the lower concave portion 140A as shown.
When the second gasket 600A is disposed as in fig. 7, the length L1 of the first path of the exhaust gas discharged through the first exhaust port 610A of the second gasket 600A and discharged to the first exhaust port 160A is the same as the length L2 of the second path of the exhaust gas discharged through the second exhaust port 611A of the second gasket 600A and discharged to the second exhaust port 160B. In this case, the length L1 of the first path and the length L2 of the second path correspond to the lengths of the variable exhaust paths 136A, 137A, respectively.
In the state configured as shown in fig. 7, when it is necessary to adjust uniformity of the thin film after the vapor deposition process is performed on the substrate, the second spacer 600A may be rotated.
For example, fig. 8 shows a state in which the second pad 600A is rotated counterclockwise by a certain angle (for example, approximately 45 degrees) from the state of fig. 7.
When the second gasket 600A is disposed as shown in fig. 8, the first exhaust port 610A of the second gasket 600A is positioned at the lower end portion of the first extension groove portion 134A, and the first exhaust port 610A directly communicates with the first exhaust port 160A. In this case, the exhaust gas discharged through the first exhaust port 610A may be directly discharged to the first exhaust port 160A.
In contrast, the second exhaust port 611A of the second gasket 600A is located at the upper end portion of the second extension groove portion 135A. In this case, the exhaust gas discharged through the second exhaust port 611A moves over the entire length L2' of the extended groove portion 135A and is then discharged to the second exhaust port 160B. That is, in this case, the entire section of the extended groove portion 135A corresponds to the variable exhaust passage 137A. Accordingly, the length of the second path of exhaust gas discharged to the second exhaust port 160B is longer than the length L2' of the variable exhaust path 137A of the first path of exhaust gas discharged to the first exhaust port 160A.
If the length of the exhaust path for exhausting the exhaust gas in this manner becomes longer, the suction force of a pump (not shown) for pumping and exhausting the exhaust gas is relatively reduced. In addition, as the length of the exhaust path increases, the flow velocity of the exhaust gas decreases due to friction between the inner wall of the exhaust path and the fluid, and the overall flow resistance of the exhaust path increases. Finally, when the variable exhaust path is adjusted to lengthen the exhaust path, the overall flow resistance of the exhaust path increases, and the time for which the process gas or the like flowing toward the corresponding exhaust path stays in the processing space increases, so that the thickness of the film deposited on the substrate can be increased. In contrast, when the variable exhaust path is adjusted to shorten the exhaust path, the overall flow resistance of the exhaust path is reduced, and the time for which the process gas or the like directed to the corresponding exhaust path stays in the processing space is shortened, so that the thickness of the film deposited on the substrate can be reduced.
On the other hand, fig. 9 shows a state in which the second pad 600A is rotated clockwise by a certain angle (for example, approximately 45 degrees) from the state of fig. 7.
When the second gasket 600A is disposed as shown in fig. 9, the second exhaust port 611A of the second gasket 600A is positioned at the lower end portion of the second extension groove portion 135A, and the second exhaust port 611A directly communicates with the second exhaust port 160B. In this case, the exhaust gas discharged through the second exhaust port 611A may be directly discharged to the second exhaust port 160B.
In contrast, the first exhaust port 610A of the second gasket 600A is located at the upper end of the first extension groove 134A. In this case, the exhaust gas discharged through the first exhaust port 610A moves the entire length L1' of the extended groove 134A and is then discharged to the first exhaust port 160A. That is, in this case, the entire section of the extended groove portion 134A corresponds to the variable exhaust path 136A. Accordingly, the length of the first path of exhaust gas discharged to the first exhaust port 160A is longer than the length L1' of the variable exhaust path 136A of the second path of exhaust gas discharged to the first exhaust port 160A.
Finally, as the length of the path of the exhaust gas discharged through the first exhaust port 160A or the second exhaust port 160B is changed to be longer, the time in which the process gas moving toward the first exhaust port 160A or the second exhaust port 160B on the substrate stays on the substrate can be changed to be longer. This enables adjustment of the thickness of the film deposited on the substrate.
On the other hand, in fig. 7 to 9, the rotational arrangement of the second gasket 600A is merely an example, and the second gasket 600A may be arranged to have any position or any rotational angle at which the second exhaust port 611A communicates with the extended groove portions 134A, 135A.
In the above, the present invention has been described with reference to the preferred embodiments thereof, but various modifications and alterations may be made by those skilled in the art without departing from the spirit and scope of the invention as described in the appended claims. Accordingly, the modification is to be construed as being included in the technical scope of the present invention if the modification basically includes the constituent elements of the claims of the present invention.
Claims (8)
1. A substrate processing apparatus is characterized by comprising:
a chamber providing a plurality of processing spaces for processing a substrate;
an exhaust port connected to a base of the chamber to exhaust the exhaust gas of the processing space to the outside of the chamber;
a pair of extending groove portions which are in fluid communication with the exhaust port and are formed on the outer periphery of a plurality of downward concave portions formed on the base of the chamber along the downward direction; and
a gasket assembly disposed in the lower recess and in fluid communication with the extension groove and capable of adjusting a length of an exhaust path of the exhaust gas,
the exhaust path includes: and a variable exhaust path formed in the extension groove portion, the variable exhaust path being a section between an exhaust port and the exhaust port in the gasket assembly, the gasket assembly adjusting a length of the variable exhaust path.
2. The substrate processing apparatus according to claim 1, wherein,
the variable exhaust path is formed in a space between an outer peripheral surface of the gasket assembly and the extension groove portion.
3. The substrate processing apparatus according to claim 1, wherein,
the cushion assembly includes:
a first gasket provided in the lower recess portion, respectively, and having a plurality of exhaust grooves arranged on a circumference thereof for radially exhausting exhaust gas; and
and a second gasket disposed in the lower recess portion at a predetermined interval to the outside of the first gasket, and forming an exhaust passage through which exhaust gas moves, and a pair of exhaust ports formed in the second gasket.
4. The substrate processing apparatus according to claim 3, wherein,
the second gasket is rotatably disposed inside the lower recess portion, and can adjust the length of an exhaust path of the exhaust gas discharged through the exhaust port.
5. The substrate processing apparatus according to claim 3, wherein,
the second gasket is provided with a base part and a side wall part formed upwards from the edge of the base part,
the exhaust port extends from the side wall portion to a portion of the base portion.
6. The substrate processing apparatus according to claim 1, wherein,
the pair of extended groove portions are formed to be symmetrical about a central portion of the lower concave portion.
7. The substrate processing apparatus according to claim 6, wherein,
the exhaust ports are respectively connected with the extending groove parts of the adjacent lower concave parts.
8. The substrate processing apparatus according to claim 1, wherein,
the exhaust port is connected asymmetrically centering on a central portion of the lower concave portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| KR102312364B1 (en) | 2021-10-13 |
| CN113035740A (en) | 2021-06-25 |
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