CN113035740A

CN113035740A - Substrate processing apparatus

Info

Publication number: CN113035740A
Application number: CN202011399107.XA
Authority: CN
Inventors: 张琼镐; 卢熙成; 元钟必
Original assignee: TES Co Ltd
Current assignee: TES Co Ltd
Priority date: 2019-12-24
Filing date: 2020-12-02
Publication date: 2021-06-25
Anticipated expiration: 2040-12-02
Also published as: KR102312364B1; KR20210081751A; CN113035740B

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving uniformity of thickness of a thin film deposited on a substrate or adjusting thickness of the thin film by adjusting length of an exhaust path through which exhaust gas is exhausted from each station when a plurality of stations are provided in a chamber. The substrate processing apparatus includes: a chamber providing a plurality of processing spaces for processing a substrate; an exhaust port connected to a base of the chamber to discharge exhaust gas of the processing space to an outside of the chamber: a pair of extension groove portions that are in fluid communication with the exhaust port and are formed at least partially on the outer periphery of a plurality of lower recess portions formed in the base of the chamber in a downward direction; and a gasket assembly provided to the lower recess portion, and in fluid communication with the extension groove portion, and capable of adjusting a length of an exhaust path of the exhaust gas.

Description

Substrate processing apparatus

Technical Field

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus including a liner assembly that discharges exhaust gas from each of a plurality of stations when the plurality of stations are provided in a chamber.

Background

In general, a substrate processing apparatus performs processes such as vapor deposition, etching, and cleaning on a substrate inside a chamber, and recently, in order to improve the productivity of the substrate processing apparatus, a technology for processing a plurality of substrates inside a single chamber has been developed.

Fig. 10 corresponds to a plan view showing a substrate processing apparatus according to the related art. As shown in fig. 10, recessed

portions

12A, 12B, 12C, and 12D corresponding to a plurality of substrates (not shown) are provided in the base of the chamber 10. The substrate is mounted on substrate support portions (not shown) provided in the recessed

portions

12A, 12B, 12C, and 12D, respectively, and then the process is performed on the substrate.

In this case, during the process of the substrate or when the process is finished, the exhaust gas is discharged to the outside of the chamber 10 through the

exhaust ports

14A, 14B, 14C, 14D provided at the lower surface of the chamber 10. In this case, the

exhaust ports

14A, 14B, 14C, and 14D are respectively provided between the

adjacent recesses

12A, 12B, 12C, and 12D in order to improve space utilization below the chamber 10 and simplify the structure.

When the

exhaust ports

14A, 14B, 14C, and 14D are arranged as described above, the exhaust gas flows along the arrows shown in the drawing in the

recessed portions

12A, 12B, 12C, and 12D, and is discharged to the

exhaust ports

14A, 14B, 14C, and 14D.

However, such a substrate processing apparatus of the related art has the following disadvantages: the flow direction of the process gas flowing toward the

exhaust ports

14A, 14B, 14C, and 14D on the upper surface of the substrate disposed in the respective

concave portions

12A, 12B, 12C, and 12D tends to be deviated, and the uniformity of the thin film deposited on the substrate is lowered.

Disclosure of Invention

In order to solve the above-described problems, an object of the present invention is to provide a substrate processing apparatus capable of adjusting the length of an exhaust path for exhausting exhaust gas from each station when a plurality of stations are provided in a chamber.

Another object of the present invention is to provide a substrate processing apparatus capable of improving uniformity of thickness of a thin film deposited on a substrate or adjusting the thickness of the thin film.

As described above, the object of the present invention is achieved by a substrate processing apparatus comprising: a chamber providing a plurality of processing spaces for processing a substrate; an exhaust port connected to a base of the chamber to discharge exhaust gas of the processing space to an outside of the chamber: a pair of extension groove portions that are in fluid communication with the exhaust port and are formed at least partially on the outer periphery of a plurality of lower recess portions formed in the base of the chamber in a downward direction; and a gasket assembly provided to the lower recess portion, and in fluid communication with the extension groove portion, and capable of adjusting a length of an exhaust path of the exhaust gas.

Here, the exhaust path may include: a variable exhaust path formed at least a part of a section of the extension groove portion, the variable exhaust path being a section between an exhaust port of the gasket assembly, through which the exhaust gas is discharged, and the exhaust port, the gasket assembly adjusting a length of the variable exhaust path.

On the other hand, the variable exhaust path may be formed in a space between the outer peripheral surface of the pad assembly and the extension groove portion.

In addition, it may be that the cushion assembly includes: first gaskets respectively arranged on the lower recessed parts, wherein a plurality of exhaust grooves for radially exhausting exhaust gas are arranged on the circumference of the first gaskets; and a second gasket disposed at a predetermined interval to the outside of the first gasket in the lower recess portion, and forming an exhaust gas flow path through which exhaust gas moves, wherein the second gasket is formed with a pair of exhaust ports.

Further, the second gasket may be rotatably disposed inside the lower recess portion, and the length of an exhaust path of the exhaust gas discharged through each of the exhaust ports may be adjustable.

The second gasket may include a base portion and a side wall portion formed upward from an edge of the base portion, and the exhaust port may extend from the side wall portion to a part of the base portion.

On the other hand, the pair of extension groove portions may be formed to be symmetrical about a central portion of the lower recessed portion.

In this case, the exhaust ports may be connected to the extending groove portions of the adjacent lower concave portions, respectively.

On the other hand, the exhaust port may be connected asymmetrically about a central portion of the lower recess.

According to the present invention having the above-described configuration, when a plurality of stations are provided in the chamber, the length of the exhaust path through which the exhaust gas is discharged from each station can be adjusted. Therefore, the thickness uniformity of the thin film deposited on the substrate can be improved or the thickness of the thin film can be adjusted.

Drawings

Fig. 1 is a side sectional view showing a state after a substrate supporting part is lowered in a substrate processing apparatus according to an embodiment of the present invention;

fig. 2 is a side sectional view showing a state after the substrate supporting portion is raised in fig. 1;

FIG. 3 is a perspective view of the chamber lid of FIG. 1 open showing the interior of the chamber body;

fig. 4 is a plan view showing a state where an exhaust port is connected to a lower recess portion of a chamber;

fig. 5 is a partially exploded perspective view showing the first gasket and the second gasket;

fig. 6 is a partial sectional view showing a state where the first gasket and the second gasket are bonded to the chamber;

fig. 7 to 9 are plan views of the rotated state of the second gasket;

fig. 10 is a plan view of a conventional substrate processing apparatus.

(description of reference numerals)

100: chamber

150: chamber cover

130: chamber body

200: spray head

400: substrate support part

1000: substrate processing apparatus

150A, 150B: base plate

500A, 500B: first liner

510A, 510B: exhaust groove

520A, 520B: annular exhaust flow path

600A, 600B: second liner

610A, 610B: exhaust port

Detailed Description

Hereinafter, the substrate processing apparatus 1000 according to the embodiment of the present invention will be described in detail with reference to the drawings.

Fig. 1 is a side sectional view illustrating a state in which

substrate supporting parts

400A and 400B are lowered in a substrate processing apparatus 1000 according to an embodiment of the present invention, fig. 2 is a side sectional view illustrating a state in which the

substrate supporting parts

400A and 400B are raised during a process of processing a substrate in fig. 1, and fig. 3 is a perspective view illustrating an inside of a chamber main body 130 in which a chamber lid 115 is opened in fig. 1.

Referring to fig. 1 to 3, the substrate processing apparatus 1000 may include: a chamber 100 including a chamber body 130 and a chamber lid 115 closing an upper portion of an opening of the chamber body 130; a plurality of

upper recesses

210A, 210B formed at a predetermined distance from each other in the chamber lid 115; a plurality of

showerheads

200A, 200B disposed in the

upper recesses

210A, 210B of the chamber lid 115 to supply process gas toward the substrate; and a plurality of

substrate supporting parts

400A and 400B provided under the

heads

200A and 200B to support the substrates, and vertically movable to be inserted into the

upper recesses

210A and 210B, thereby forming processing spaces between the

substrate supporting parts

400A and 400B and the

heads

200A and 200B.

The chamber 100 provides a plurality of processing spaces inside, which can perform various processes such as an evaporation process on the substrate.

For example, the chamber 100 may include a chamber body 130 having an upper side opened and a chamber lid 115 closing the upper side of the chamber body 130.

The chamber body 130 may include a door (not shown) for transferring the substrate. Further,

exhaust units

700A, 700B, 700C, and 700D for exhausting residual gas inside the chamber 100 may be provided below the chamber body 130. As shown in fig. 3, when 4 process spaces are provided inside the chamber 100, the

exhaust units

700A, 700B, 700C, 700D may be configured in a number corresponding to the number of the process spaces. The

exhaust units

700A, 700B, 700C, and 700D will be described in detail later.

On the other hand, in the present invention, a plurality of

substrate supporting parts

400A and 400B and

showerheads

200A and 200B may be provided inside the chamber 100. The present invention is shown to include 4

substrate support units

400A and 400B and

heads

200A and 200B, but the present invention is not limited thereto, and an appropriate number of substrate support units and heads may be provided. However, fig. 1 corresponds to a side view, and only 2 heads and substrate support portions are shown, and fig. 3 omits the heads and substrate support portions. When the substrate support

portions

400A and 400B and the

heads

200A and 200B are provided in plural numbers, more substrates can be processed at a time, and the production efficiency (throughput) can be improved.

The

substrate support units

400A and 400B are disposed below the chamber body 130 so as to be movable up and down. The substrate support

portions

400A and 400B are provided with heaters (not shown) and the like, and the substrates can be heated when mounted on the upper surfaces of the

substrate support portions

400A and 400B. Further, support

rods

410A and 410B extend below the centers of the

substrate support portions

400A and 400B, and the

substrate support portions

400A and 400B are moved up and down by vertically moving the

support rods

410A and 410B.

On the other hand, the chamber lid 115 functions to seal the upper part of the opening of the chamber body 130.

The chamber lid 115 is provided with

showerheads

200A and 200B for supplying process gas toward the substrate.

In the case of this embodiment, a plurality of

upper recesses

210A and 210B may be disposed at a predetermined distance from each other in the chamber lid 115. For example, when 4 upper

concave portions

210A and 210B are provided, the chamber lid 115 is arranged in a quadrangular shape. Such an arrangement shape is merely an example, and the arrangement shape of the upper recess portion can be appropriately modified. The

showerheads

200A, 200B are disposed in the

upper recesses

210A, 210B of the chamber lid 115.

For example, the

upper recesses

210A and 210B may be formed in the chamber lid 115, and the

showerheads

200A and 200B may be disposed inside the

upper recesses

210A and 210B.

As described above, if the

showerheads

200A and 200B are disposed inside the

upper recesses

210A and 210B, it is possible to prevent the substrate from interfering with the

showerheads

200A and 200B during the transfer of the substrate inside the chamber 100.

Before the substrate is processed, the

substrate support portions

400A and 400B are raised toward the upper

concave portions

210A and 210B as shown in fig. 2. At this time, the upper surfaces of the

substrate support portions

400A and 400B may be raised to the same height as the lower surface of the chamber lid 115 or may be further raised to a predetermined height. Accordingly, a processing space for performing a processing process on a substrate is provided by the lower surface of the

showerhead

200A, 200B, the inner sidewall of the

upper recess

210A, 210B, and the upper surface of the

substrate support

400A, 400B.

On the other hand, the processing space is not a completely closed space, and a gap 212 having a predetermined size is provided between the side surface of the

substrate support portion

400A or 400B and the inner wall of the

upper recess portion

210A or 210B. For example, the outer diameters of the

substrate support portions

400A and 400B may be made smaller than the inner diameters of the upper

concave portions

210A and 210B by a predetermined size.

Accordingly, the process gas supplied toward the substrate through the

showerhead

200A, 200B passes over the substrate and then is exhausted to the outside of the chamber 100 through the gap 212 and the

lower exhaust unit

700A, 700B, 700C, 700D.

The base 132 of the chamber 100 may include

exhaust units

700A, 700B, 700C, and 700D for exhausting residual gas in the processing space.

For example, the

exhaust units

700A, 700B, 700C, and 700D may include: an exhaust port 160A connected to the base 132 of the chamber 100 to exhaust the exhaust gas of the processing space to the outside of the chamber 100; a pair of

extension groove portions

134A, 135A that are in fluid communication with the exhaust port 160A and are formed at least partially along the outer peripheries of a plurality of lower recessed

portions

140A, 140B formed downward in the base 132 of the chamber 100; and a gasket assembly 900A (refer to fig. 5) that is provided in the lower recessed

portions

140A, 140B and is in fluid communication with the

extension groove portions

134A, 135A, and that is capable of adjusting the length of the exhaust path of the exhaust gas.

On the other hand, fig. 4 is a plan view showing a state in which the

exhaust ports

160A, 160B, 160C, and 160D are connected to the

lower recesses

140A, 140B, 140C, and 140D of the chamber body 130.

Referring to fig. 4, in order to simplify the lower structure of the chamber 100, the

exhaust ports

160A, 160B, 160C, 160D may be formed between the

lower recesses

140A, 140B, 140C, 140D at a minimum number of positions where the exhaust gas can be collectively exhausted. For example, as shown, when 4

lower recesses

140A, 140B, 140C, 140D are provided, the

exhaust ports

160A, 160B, 160C, 160D may be provided 4 between the

lower recesses

140A, 140B, 140C, 140D. In addition, in order to improve the ease of processing when manufacturing the chamber 100, it is preferable to form the chamber at the shortest distance between the adjacent

lower recesses

140A, 140B, 140C, 140D. Therefore, the

exhaust ports

160A, 160B, 160C, 160D are connected asymmetrically centering on the central portion of each of the

lower recesses

140A, 140B, 140C, 140D.

In the case where the exhaust port 160A is configured as described above, the following description will be made centering on the first exhaust unit 700A disposed in the first processing space.

Referring to fig. 1 to 3, the lower recess 140A may be formed at the base 132 of the chamber 100. The lower recess 140A may be formed corresponding to the upper recess 210A described above.

The support rod 410A of the substrate support portion 400A may be disposed to penetrate along the center of the lower recess 140A so as to be vertically movable.

On the other hand, a liner assembly 900A (see fig. 5) may be provided inside the lower recess 140A.

Fig. 5 is an exploded perspective view of the first gasket 500A and the second gasket 600A, and fig. 6 is a partial sectional view illustrating a state in which the first gasket 500A and the second gasket 600A are coupled to the lower recess 140A.

Referring to fig. 3 to 6, the gasket assembly 900A may include: a first gasket 500A disposed in the lower recess 140A, and having a plurality of exhaust grooves 510A for radially discharging exhaust gas arranged on a circumference; and a second gasket 600A disposed at a predetermined distance to the outside of the first gasket 500A in the lower recess 140A, an exhaust gas flow path 520A through which exhaust gas flows being formed between the second gasket 600A and the first gasket 500A, and a pair of

exhaust ports

610A, 611A being formed in the second gasket 600A.

In this case, the first gasket 500A may include a flange portion 512A and an extension portion 514A extending downward from the flange portion 512A. In this case, the lower side of the first gasket 500A, i.e., the lower side of the extension portion 514A, may have an open shape.

The base 132 may include a base plate 150A, and the base plate 150A may be formed with a stepped portion 152A so that the first gasket 500A can be inserted into the lower recess 140A and disposed therein.

That is, the flange portion 512A of the first gasket 500A may be mounted and disposed on the stepped portion 152A. In this case, the flange portion 512A of the first gasket 500A does not protrude upward.

A plurality of air discharge grooves 510A may be formed at the extension portion 514A. The air discharge groove 510A is disposed along the extension portion 514A. At this time, when the first gasket 500A is viewed in plan, the air vent grooves 510A are radially arranged around the central portion of the first gasket 500A. Therefore, the exhaust gas discharged from the first processing space may be dispersed in the circumferential direction of the substrate disposed in the first processing space.

On the other hand, the second gasket 600A is disposed in the lower recess 140A to form an annular exhaust flow path 520A for exhaust gas to move between the first gasket 500A and the lower recess. That is, the second gasket 600A is mounted on the lower recess 140A, and the first gasket 500A is disposed above the second gasket 600A. At this time, the annular space corresponding to the interval between the first gasket 500A and the second gasket 600A corresponds to the annular exhaust flow path 520A through which the exhaust gas discharged through the exhaust groove 510A moves.

For example, the second pad 600A may include a base portion 614A and a sidewall portion 612A formed upward from an edge of the base portion 614A. A through hole 616A through which the support rod 410A of the substrate support unit 400A passes is formed in the center of the base unit 614A.

In this case, the sidewall portion 612A of the second gasket 600A is configured to have a larger diameter than the extension portion 514A of the first gasket 500A such that the extension portion 514A of the first gasket 500A is disposed inside the sidewall portion 612A of the second gasket 600A when the second gasket 600A and the first gasket 500A are joined.

Therefore, an exhaust gas flow path 520A is formed between the side wall portion 612A of the second gasket 600A, the base portion 614A of the second gasket 600A, the extension portion 514A of the first gasket 500A, and the flange portion 512A of the first gasket 500A.

On the other hand, a pair of

exhaust ports

610A, 611A for discharging the exhaust gas moving along the exhaust flow path 520A may be formed in the second gasket 600A. The pair of

exhaust ports

610A, 611A may be formed to be symmetrical about a central portion of the base portion 614A. However, the arrangement of the

exhaust ports

610A and 611A is merely an example, and it goes without saying that the arrangement may be symmetrical about the center of the base 614A.

The

exhaust ports

610A, 611A may extend to a portion of the base portion 614A as shown in fig. 5, instead of being formed only in the sidewall portion 612A. In this way, if the

exhaust ports

610A and 611A are extended to a part of the base portion 614A, when exhaust gas is discharged from the

exhaust ports

610A and 611A, generation of a vortex is minimized, and the exhaust gas can be discharged more smoothly toward the exhaust port 160A located below.

On the other hand, the lower recess 140A of the base 132 of the chamber 100 may include a pair of

extension groove portions

134A, 135A formed along at least a portion of the outer circumference of the lower recess 140A and in fluid communication with the

exhaust ports

610A, 611A.

The pair of

extension groove portions

134A, 135A may be formed to be symmetrical about the center of the lower recess portion 140A.

In this case, the exhaust path may include

variable exhaust paths

136A and 137A, the

variable exhaust paths

136A and 137A may be formed in at least a partial section of the

extension groove portions

134A and 135A and may be a section between the

exhaust ports

610A and 611A of the gasket assembly 900A for discharging the exhaust gas and the exhaust port 160A, and the gasket assembly 900A may be configured to adjust the lengths of the

variable exhaust paths

136A and 137A.

For example, the spaces between the outer peripheral surface of the pad assembly 900A and the

extension groove portions

134A, 135A may form the

variable exhaust paths

136A, 137A.

When the second gasket 600A is disposed inside the lower recessed portion 140A, the

variable exhaust paths

136A and 137A are formed by spaces corresponding to gaps between the outer peripheral surface of the second gasket 600A and the

extension groove portions

134A and 135A.

Therefore, the exhaust gas discharged through the

exhaust ports

610A, 611A of the second gasket 600A is discharged along the

variable exhaust paths

136A, 137A between the second gasket 600A and the

extension groove portions

134A, 135A. In this case, the exhaust ports 160A are connected to the

variable exhaust paths

136A and 136B of the adjacent lower recess portions 140A, respectively (see fig. 1). Therefore, the

variable exhaust paths

136A and 136B are connected to the exhaust port 160A, and the exhaust gas moving along the

variable exhaust paths

136A and 136B is discharged to the outside through the exhaust port 160A.

On the other hand, the second spacer 600A of the present embodiment is rotatably disposed inside the lower recess 140A, and the lengths of the

variable exhaust paths

136A and 137A of the exhaust gas discharged to the outside of the substrate are adjusted to be different from each other, thereby adjusting the uniformity of the thin film deposited on the substrate. Hereinafter, description will be given with reference to fig. 7 to 9.

Fig. 7 shows a state in which the second gasket 600A is rotated and the

exhaust ports

610A, 611A of the second gasket 600A are disposed in the circumferential center portions of the

extension groove portions

134A, 135A or the

variable exhaust paths

136A, 137A. In this case, the

exhaust ports

160A, 160B may be connected asymmetrically centering on the central portion of the lower recess 140A as shown in the drawing.

When the second gasket 600A is disposed as shown in fig. 7, the length L1 of the first path of the exhaust gas discharged through the first exhaust port 610A of the second gasket 600A and discharged to the first exhaust port 160A is the same as the length L2 of the second path of the exhaust gas discharged through the second exhaust port 611A of the second gasket 600A and discharged to the second exhaust port 160B. In this case, the length L1 of the first path and the length L2 of the second path correspond to the lengths of the

variable exhaust paths

136A, 137A, respectively.

In the state of being configured as shown in fig. 7, when it is necessary to adjust the uniformity of a thin film after the evaporation process is performed on the substrate, the second liner 600A may be rotated.

For example, fig. 8 shows a state in which the second liner 600A is rotated counterclockwise by a certain angular amount (e.g., approximately 45 measurements) from the state of fig. 7.

When the second gasket 600A is disposed as shown in fig. 8, the first exhaust port 610A of the second gasket 600A is located at the lower end portion of the first extension groove portion 134A, and the first exhaust port 610A directly communicates with the first exhaust port 160A. In this case, the exhaust gas discharged through the first exhaust port 610A may be directly discharged to the first exhaust port 160A.

In contrast, the second exhaust port 611A of the second gasket 600A is located at the upper end of the second extension groove portion 135A. In this case, the exhaust gas discharged through the second exhaust port 611A moves to the full length L2' of the extension groove 135A and is then discharged to the second exhaust port 160B. That is, in this case, the entire section of the extension groove 135A corresponds to the variable exhaust path 137A. Therefore, the length of the second path of the exhaust gas discharged to the second exhaust port 160B is longer than the length L2' of the variable exhaust path 137A of the first path of the exhaust gas discharged to the first exhaust port 160A.

If the length of the exhaust path through which the exhaust gas is discharged is increased, the suction force of a pump (not shown) that pumps and discharges the exhaust gas is relatively reduced. Further, as the length of the exhaust path becomes longer, the flow velocity of the exhaust gas decreases due to the frictional force between the inner wall of the exhaust path and the fluid, and the overall flow resistance of the exhaust path increases. Finally, if the exhaust path is lengthened by adjusting the variable exhaust path, the overall flow resistance of the exhaust path increases, and the time during which the process gas or the like heading to the exhaust path stays in the processing space increases, thereby making it possible to increase the thickness of the thin film deposited on the substrate. Conversely, if the exhaust path is shortened by adjusting the variable exhaust path, the overall flow resistance of the exhaust path is reduced, and the time during which the process gas or the like heading for the exhaust path stays in the processing space is shortened, thereby making it possible to reduce the thickness of the thin film deposited on the substrate.

On the other hand, fig. 9 shows a state in which the second gasket 600A is rotated clockwise by a certain angular amount (for example, approximately 45 degrees) from the state of fig. 7.

When the second gasket 600A is disposed as shown in fig. 9, the second exhaust port 611A of the second gasket 600A is located at the lower end of the second extension groove 135A, and the second exhaust port 611A directly communicates with the second exhaust port 160B. In this case, the exhaust gas discharged through the second exhaust port 611A may be directly discharged to the second exhaust port 160B.

In contrast, the first air outlet 610A of the second gasket 600A is located at the upper end portion of the first extension groove portion 134A. In this case, the exhaust gas discharged through the first exhaust port 610A is discharged to the first exhaust port 160A after moving the full length L1' of the extension groove part 134A. That is, in this case, the entire section of the extension groove portion 134A corresponds to the variable exhaust path 136A. Therefore, the length of the first path of the exhaust gas discharged to the first exhaust port 160A is longer than the length of the second path of the exhaust gas discharged to the first exhaust port 160A by the length L1' of the variable exhaust path 136A.

Finally, as the length of the path of the exhaust gas discharged through the first exhaust port 160A or the second exhaust port 160B becomes longer, the residence time of the process gas moving on the substrate toward the first exhaust port 160A or the second exhaust port 160B on the substrate can become longer. This makes it possible to adjust the thickness of the thin film deposited on the substrate.

On the other hand, in fig. 7 to 9, the rotational arrangement of the second gasket 600A is merely an example, and the second gasket 600A may be arranged at any position or any rotational angle at which the second exhaust port 611A communicates with the

extension groove portions

134A and 135A.

In the above, the preferred embodiments of the present invention are described, but those skilled in the art can make various modifications and changes without departing from the spirit and scope of the present invention as set forth in the appended claims. Therefore, the modifications are to be construed as being included in the technical scope of the present invention if they substantially include the constituent elements of the claims of the present invention.

Claims

1. A substrate processing apparatus is characterized by comprising:

a chamber providing a plurality of processing spaces for processing a substrate;

an exhaust port connected to a base of the chamber to discharge exhaust gas of the processing space to an outside of the chamber:

a pair of extension groove portions that are in fluid communication with the exhaust port and are formed at least partially on the outer periphery of a plurality of lower recess portions formed in the base of the chamber in a downward direction; and

a gasket assembly disposed in the lower recess portion and in fluid communication with the extension groove portion, and capable of adjusting a length of an exhaust path of the exhaust gas.

2. The substrate processing apparatus according to claim 1,

the exhaust path includes:

a variable exhaust path formed in at least a partial section of the extension groove portion, the variable exhaust path being a section between an exhaust port of the gasket assembly, through which the exhaust gas is discharged, and the exhaust port,

the liner assembly adjusts a length of the variable exhaust path.

3. The substrate processing apparatus according to claim 2,

the variable exhaust path is formed in a space between an outer circumferential surface of the pad assembly and the extension groove portion.

4. The substrate processing apparatus according to claim 1,

the cushion assembly includes:

first gaskets respectively arranged on the lower recessed parts, wherein a plurality of exhaust grooves for radially exhausting exhaust gas are arranged on the circumference of the first gaskets; and

and a second gasket disposed at the lower recess portion with a predetermined distance to the outside of the first gasket, forming an exhaust passage through which exhaust gas moves, and having a pair of exhaust ports formed therein.

5. The substrate processing apparatus according to claim 4,

the second gasket is rotatably disposed inside the lower recess portion, and the length of an exhaust path of the exhaust gas discharged through each of the exhaust ports can be adjusted.

6. The substrate processing apparatus according to claim 4,

the second pad includes a base portion and a side wall portion formed upward from an edge of the base portion,

the exhaust port extends from the sidewall portion to a portion of the base portion.

7. The substrate processing apparatus according to claim 1,

the pair of extending groove portions is formed to be symmetrical with respect to the center portion of the lower recessed portion.

8. The substrate processing apparatus according to claim 7,

the exhaust ports are respectively connected to the extending groove portions of the adjacent lower concave portions.

9. The substrate processing apparatus according to claim 1,

the exhaust ports are connected so as to be asymmetrical with a center of the lower recess portion as a center.