CN112997320A - 光伏太阳能电池及其制造方法 - Google Patents
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Abstract
一种光伏太阳能电池及其制造方法,包括:设置在硅基板(1)上的前电极(2),该前电极(2)至少具有由单一材料构成的若干指状物(4)和若干母线(5),该单一材料完全由金属硅化物组成,该金属硅化物是通过在硅基板(1)上沉积金属并施加热处理以引起金属和硅之间的反应获得的,因此光伏太阳能电池的电压损耗与具有银电极或额外的导电材料涂层的常规电池的电压损耗接近。
Description
技术领域
本发明涉及一种光伏太阳能电池,更具体地,涉及一种硅光伏太阳能电池及其制造工艺,所述电池具有由单一材料形成的前电极,所述单一材料是通过热处理获得的金属硅化物,所述电池避免了用额外的导电材料涂覆所述前电极的需要,并且尤其是避免了使电池的成本增加的银的使用。
背景技术
近年来,可再生能源的兴起对于减轻化石燃料的消耗变得越来越重要。光伏太阳能是最有前途的可再生能源之一。光伏太阳能开发的主要目的之一在于例如通过降低光伏组件的制造成本来降低太阳能生产成本。
光伏组件由将来自太阳的光能转换为电能的光伏太阳能电池组成。标准的光伏太阳能电池由前电极、用作有源层的硅基板以及后电极组成,该有源层布置在两个电极之间。前电极具有电引导到电池外部的导电分支,所述分支由导电栅格或网格(也称为“指状物”)和母线组成。栅格由比母线更薄的指状物形成,它们的功能是收集在电池中获得的电能以将其发送到母线,其中相邻电池之间的触点被焊接在母线中。
前电极通常由通过丝网印刷而沉积的银形成,由于银的低电阻率、良好的热稳定性以及与硅工艺的高兼容性,因此银被证明是特别适合用于制造太阳能电池的材料。该工艺的另一种替代方法是使用金属硅化物作为硅基板与额外的导电材料之间的中间材料,用于实现前电极的导电条件,需要前电极的导电条件以提取电流并且使电阻损失最小化。以下文献提及了在光伏太阳能电池的制造中金属硅化物的使用,并且在其中使用额外的导电材料层来改善前电极的导电性。这些文献是EP2428997A2、US2014096823A1、WO2013076267A1、US2010071751A1、US2010037941A1。
诸如银的导电材料或者其上沉积有额外的导电材料的硅化物的及其沉积方法的使用极大地增加了光伏太阳能电池的制造成本。如今,在不考虑硅价格的情况下,银对电池成本的影响为13%。因此,需要一种获得光伏太阳能电池的替代解决方案,该光伏太阳能电池避免使用银或复杂的制造工艺,同时保持适合的能量效率。
发明内容
本发明提出了一种具有前电极的光伏太阳能电池、其制造方法和由光伏太阳能电池形成的光伏组件,其中,所提出的太阳能电池的前电极由单一材料形成,该单一材料不需要使用银电极,但是能够获得与使用所述银或其他更复杂的沉积工艺的常规太阳能电池相似的能量效率。
所提出的光伏太阳能电池包括布置在硅基板上的前电极,并且至少具有用于引导活性材料中产生的电能并将其发送到电池外部的指状物。优选地,前电极具有用于引导活性材料中产生的电能并将其发送到电池外部的指状物和母线。
根据本发明,太阳能电池的前电极通过仅由金属硅化物组成的单一材料形成,而不包括任何额外的导电材料层。
本发明的光伏太阳能电池对象的前电极的制造方法包括在硅基板上布置金属并且施加热处理以引起金属与硅之间的反应,从而获得通过仅由金属硅化物组成的单一材料形成的前电极。
使用金属硅化物作为单一材料来形成光伏太阳能电池的前电极,从而避免了银的使用以及用于形成前电极的任何其他的额外工艺,从而降低了电池的成本。
例如,为了使光伏太阳能电池具有与常规电池相似的功率损耗,指状物的宽度约为5μm,并且指状物之间的最小间距至少为0.2mm,并且前电极具有至少27条母线。
如果能够制造宽度小于5μm的指状物,则其余的最佳参数将由下面描述的等式得出。
更优选地,指状物具有在5μm至30μm之间的宽度,指状物之间的最小间距在0.2mm至1.1mm之间,并且母线的数量在27和34之间。
根据本发明的实施例,指状物的宽度为5μm,指状物之间的最小间距为0.2mm,并且前电极具有27条母线,其中每条母线的宽度为148μm,并且母线之间的最大间距为5.6mm。
根据本发明的另一个实施例,指状物的宽度为30μm,指状物之间的最小间距为1.1mm,并且前电极具有34条母线,其中每条母线的宽度为118μm,并且母线之间的最大间距为4.5mm。
因此,由此获得具有不需要沉积额外的层来改善其导电性的前电极的太阳能电池。同样,完全避免了使用银。
该技术与多母线电池连接技术兼容,对于多母线电池连接技术,必须优化指状物的参数并且不需要母线。在SmartWire(智能线)多母线技术和其他使用相似概念的技术的情况下,母线用18条微线替代。
同样,必须指出,也可以通过本发明中描述的材料和方法来制造后电极。
附图说明
图1示出了具有硅晶片的光伏太阳能电池的透视图,该硅晶片具有在其上表面上的前电极和在其下表面上的后电极。
图2示出了具有宽度为5μm、30μm和60μm的指状物的根据本发明的三个光伏太阳能电池的功率损耗曲线的图。
具体实施方式
图1示出了由硅基板1、前电极2和后电极3形成的硅光伏太阳能电池的基本配置,前电极2布置在接收太阳辐射的硅基板1的表面中的一个表面上,后电极3布置在硅基板1的与布置有前电极2的表面相反的表面上。
由此,照射到布置有前电极2的表面上的太阳辐射被活性材料吸收,并产生电荷载流子。
前电极2具有形成栅格或网格的导电指状物4和将电引导到光伏太阳能电池的外部的母线5。指状物4收集在前电极2的活性材料中产生的能量,并将其引导到母线5,母线5将所述能量提取到电池的外部。
根据本发明,前电极2通过仅由金属硅化物组成的单一材料形成。
通过在硅基板1上布置金属薄层上并施加热处理以引起金属与硅之间的反应而产生金属硅化物,从而获得金属硅化物。
布置在硅基板1上的金属可以是钛、钴或镍。
为了获得低于8%的功率损耗,并因此使硅光伏太阳能电池具有与常规电池相似的效率,前电极2的导电栅格的指状物4的宽度必须大约为5μm,指状物4之间的间距必须大于0.2mm并且前电极2必须具有至少27条母线5。
以下所示的等式用于计算在所述等式中考虑了的电池的功率损耗、阴影损耗和电损耗:
其中Ps是指总阴影的比例,并根据以下等式来计算:
其中,R总串联是指电池所有部件的总串联电阻,并根据以下等式来计算:
电池的部件和计算每个部件的电阻的等式定义如下:
硅基板1和后电极3对于对电流进行引导的元件的电阻的贡献由于其较低的值而被认为是无关紧要的,因此没有将它们考虑在内。
下表列出了前面等式中包括的所有参数。
使用上面列出的等式[1]至[3]来计算电池的功率损耗P损耗。从这些等式可以看出,许多参数对功率损耗具有作用。因此,对于某些参数,采用了代表实际技术状态的值,如下所示:
·Re:100Ω/□
·电池尺寸:156mm x 156mm
·R前粘贴体:10-7Ω·cm2
·JMPP:34mA/cm2
·VMPP:0.52V
·n=40
·金属硅化物层的电阻:0.3Ω/□(假设厚度为500nm,材料电阻率为0.5×10-5Ω·cm)
·tb,tf=0
图2示出了对前电极2的不同设计计算光伏太阳能电池的功率损耗的图。所述图示出了取决于母线5的数量和指状物4之间的间距的、针对导电栅格的指状物4的的三个具体宽度(5μm、30μm、60μm)的功率损耗计算。
在所述图中观察到,为了获得与常规电池的损耗相似的低于8%的功率损耗,具有宽度为60μm的指状物4的前电极2是不适合的。从所述图中还观察到,对于指状物的宽度为30μm、至少具有34条母线并且指状物之间的距离至少为1.1mm的情况、以及对于指状物的宽度为5μm、至少具有27条母线并且指状物之间的距离至少为0.2mm的情况,得到低于8%的功率损耗。
下面示出了具有前电极2的参数的表格,所述前电极2根据指状物4的两个宽度30μm和5μm,得到低于8%的功率损耗。
通过在硅基板1上布置金属薄层并施加热处理以引起金属与硅之间的反应来产生金属硅化物,从而获得金属硅化物。
根据以下步骤获得金属硅化物的形成:
·清洁硅基板1以去除可能的污染物。
·在硅基板1上沉积金属薄层。
·通过热源施加热处理以获得金属硅化物,其中在其它可能的处理中,热处理可以是炉退火、快速热退火、激光退火或其组合。
要获得金属硅化物,必须将具有金属层的硅基板1在大约700℃至800℃的温度下加热几秒钟,其中不建议温度超过900℃以避免结块效应,结块效应会导致获得的材料的电阻增大。生产金属硅化物的加热工艺可以在一步或两步中执行。
执行以下4个基本步骤来制造光伏太阳能电池:
·调整(Conditioning)硅基板1的表面并且形成p-n键。
·在硅基板1的表面上执行钝化并沉积抗反射涂层。
·形成前电极2。
·形成后电极3。
以下描述根据两种热处理类型获得金属硅化物的工艺:激光工艺和炉退火或快速热退火工艺。
通过激光形成金属硅化物包括以下基本步骤:
I.去除表面损伤,对硅晶片(1)的上表面进行纹理化和清洁。
II.获得发射器。
III.从扩散工艺中消除PSG(磷硅玻璃)。
IV.沉积金属薄层。
V.通过激光处理形成金属硅化物。
VI.去除不与硅反应的金属部分。
VII.清洁硅表面。
VIII.钝化表面并沉积抗反射涂层。
IX.制造后触点3。
X.通过激光在抗反射涂层中可选地制造开口,以允许将前电极(3)的母线5与导电指状物焊接。
如果需要选择性发射器来防止电流旁路,则可以通过在步骤II之后的在先前的工艺顺序中引入的激光步骤进行。此外,激光诱导的硅化物形成步骤将需要与先前形成的选择性发射器对准。在该工艺顺序中,发射器也可以由掺杂的多晶硅材料制成,在这种情况下,不需要钝化。该工艺顺序将与以上所述的工艺顺序非常相似。
通过炉退火或快速热退火工艺形成金属硅化物包括以下基本步骤:
I.消除表面损伤,对硅晶片1的上表面进行纹理化和清洁。
ii.获取发射器。
iii.沉积钝化抗反射层。
iv.通过激光在钝化抗反射层中获得凹槽。
v.清洁通过激光制成的凹槽。
vi.沉积金属薄层。
vii.在炉中或通过快速热退火工艺形成金属硅化物。
viii.去除不与硅反应的金属部分。
ix.制造后触点3。
可以通过金属印刷将金属薄层选择性地沉积在凹槽中(步骤vi)。
Claims (15)
1.一种光伏太阳能电池,包括:前电极(2)、后电极(3)以及布置在所述前电极(2)与所述后电极(3)之间的硅基板(1),
其中,
所述前电极(2)包括多个导电指状物(4)和用于引导产生的电流的多条母线(5),
其特征在于,
所述前电极(2)由仅由金属硅化物构成的单一材料形成,
所述导电指状物(4)彼此隔开距离s,其中s>0,并且
所述导电指状物(4)的宽度wf等于或小于30μm。
2.根据权利要求1所述的光伏太阳能电池,其特征在于,所述金属硅化物的金属选自由钛、钴和镍组成的组。
3.根据权利要求1至2中的任一项所述的光伏太阳能电池,其特征在于,所述前电极(2)的所述导电指状物(4)之间的距离s至少为0.2mm,并且母线(5)的数量N至少为27。
4.根据权利要求1至3中任一项所述的光伏太阳能电池,其特征在于,所述前电极(2)的所述导电指状物(4)具有5μm的宽度wf。
5.根据权利要求1至3中任一项所述的光伏太阳能电池,其特征在于,所述前电极(2)的所述导电指状物(4)具有30μm的宽度wf。
6.根据权利要求4所述的光伏太阳能电池,其特征在于,所述导电指状物(4)之间的距离s≥0.2mm,所述母线(5)的数量N≥27,并且其中每条母线(5)的宽度w总线≤148μm,并且所述母线(5)之间的距离小于或等于5.6mm。
7.根据权利要求5所述的光伏太阳能电池,其特征在于,所述导电指状物(4)之间的距离s≥1.1mm,所述母线(5)的数量N≥34,并且其中每条母线(5)的宽度w总线≤118μm,并且所述母线(5)之间的距离小于或等于4.5mm。
8.根据权利要求1至7中任一项所述的光伏太阳能电池,其特征在于,所述导电指状物(4)具有与智能线型多母线电池连接技术兼容的参数。
9.一种光伏组件,所述光伏组件包括根据权利要求1至8中任一项所述的光伏太阳能电池。
10.一种用于制造根据权利要求1至8所述的光伏太阳能电池的制造方法,其特征在于,所述方法包括以下步骤:
调整所述硅基板(1)的表面并且在所述硅基板(1)中形成p-n键;
在所述硅基板(1)的所述表面上执行钝化,并且在所述硅基板(1)的所述表面上沉积抗反射涂层;
形成所述前电极(2);
形成所述后电极(3);
其特征在于,形成所述前电极(2)的所述步骤包括以下步骤:
清洁所述硅基板(1);
在所述硅基板(1)的所述表面上布置金属薄层;以及
施加热处理以引起金属与所述硅基板(1)的硅之间的反应。
11.根据权利要求10所述的用于制造光伏太阳能电池的制造方法,其特征在于,所述制造方法还包括以下步骤:
对所述硅基板(1)的上表面去除表面损伤,进行纹理化和清洁;
获取发射器;以及
通过激光处理形成所述金属硅化物。
12.根据权利要求11所述的用于制造光伏太阳能电池的制造方法,其特征在于,所述制造方法还包括以下步骤:通过激光在所述抗反射涂层中制造开口,以使得将所述前电极(3)的所述母线(5)与所述导电指状物焊接。
13.根据权利要求10所述的用于制造光伏太阳能电池的制造方法,其特征在于,所述方法还包括以下步骤:
对所述硅基板(1)的上表面去除表面损伤、进行纹理化和清洁;
获取发射器;
沉积钝化抗反射层;
通过激光在所述钝化抗反射层中获得凹槽;以及
在炉中或通过快速热退火工艺形成金属硅化物。
14.根据权利要求13所述的用于制造光伏太阳能电池的制造方法,其特征在于,通过金属印刷来执行沉积金属层的步骤。
15.根据权利要求10至14中任一项所述的用于制造光伏太阳能电池的制造方法,其特征在于,在小于约900℃的温度、优选地在700℃至800℃之间的温度下执行施加热处理的步骤。
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