CN112951753A - 载置台和基片处理装置 - Google Patents
载置台和基片处理装置 Download PDFInfo
- Publication number
- CN112951753A CN112951753A CN202011277967.6A CN202011277967A CN112951753A CN 112951753 A CN112951753 A CN 112951753A CN 202011277967 A CN202011277967 A CN 202011277967A CN 112951753 A CN112951753 A CN 112951753A
- Authority
- CN
- China
- Prior art keywords
- edge ring
- power supply
- mounting surface
- wiring
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019213643 | 2019-11-26 | ||
JP2019-213643 | 2019-11-26 | ||
JP2020-121686 | 2020-07-15 | ||
JP2020121686A JP7563843B2 (ja) | 2019-11-26 | 2020-07-15 | 載置台及び基板処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112951753A true CN112951753A (zh) | 2021-06-11 |
Family
ID=76220365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011277967.6A Pending CN112951753A (zh) | 2019-11-26 | 2020-11-16 | 载置台和基片处理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7563843B2 (ja) |
KR (1) | KR20210065041A (ja) |
CN (1) | CN112951753A (ja) |
TW (1) | TW202139248A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024181204A1 (ja) * | 2023-02-28 | 2024-09-06 | 東京エレクトロン株式会社 | プラズマ処理装置、基板支持部及びエッジリングの消耗補正方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4884047B2 (ja) | 2006-03-23 | 2012-02-22 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP5371466B2 (ja) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP5357639B2 (ja) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
CN109216144B (zh) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | 一种具有低频射频功率分布调节功能的等离子反应器 |
JP7033907B2 (ja) | 2017-12-21 | 2022-03-11 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
-
2020
- 2020-07-15 JP JP2020121686A patent/JP7563843B2/ja active Active
- 2020-11-12 TW TW109139444A patent/TW202139248A/zh unknown
- 2020-11-13 KR KR1020200151634A patent/KR20210065041A/ko unknown
- 2020-11-16 CN CN202011277967.6A patent/CN112951753A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2021090036A (ja) | 2021-06-10 |
TW202139248A (zh) | 2021-10-16 |
KR20210065041A (ko) | 2021-06-03 |
JP7563843B2 (ja) | 2024-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |