CN112880737B - Integrated system for detecting monocrystalline silicon epitaxial wafer - Google Patents
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- CN112880737B CN112880737B CN202110058279.9A CN202110058279A CN112880737B CN 112880737 B CN112880737 B CN 112880737B CN 202110058279 A CN202110058279 A CN 202110058279A CN 112880737 B CN112880737 B CN 112880737B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses an integrated system for detecting monocrystalline silicon epitaxial wafers, which comprises a workbench, a protective cover, a discharging device and a detecting mechanism, wherein a placing cavity for placing epitaxial wafers is processed on the workbench, a lamp plate is placed on the surface of the placing cavity, a rotary table is arranged in the middle of the placing cavity, the protective cover matched with the placing cavity is hinged to one side of the surface of the workbench, a photosensitive element matched with the lamp plate is arranged on the top of the inner wall of the protective cover, the discharging device for placing epitaxial wafers into the rotary table is arranged on the other side of the surface of the workbench, and the detecting mechanism for detecting epitaxial wafers is retractably arranged on the inner wall of the placing cavity. According to the invention, the material placing device and the detecting mechanism are arranged on the workbench, so that the continuous detection of the epitaxial wafer can be realized, the temperature, the thickness and the flatness of the epitaxial wafer and the area of the epitaxial wafer can be detected simultaneously, the detection efficiency of the epitaxial wafer is improved, and the production efficiency of the epitaxial wafer is ensured.
Description
Technical Field
The invention relates to the field of epitaxial wafer detection, in particular to an integrated system for detecting a monocrystalline silicon epitaxial wafer.
Background
Epitaxy is one of the semiconductor processes, the bottommost layer of a silicon wafer is P-type substrate silicon, and a layer of monocrystalline silicon is grown on the substrate, and is called an epitaxial layer. The epitaxial layer is used as a collector region, and a base region and an emitter region are arranged on the collector region, so that the epitaxial wafer is a silicon wafer with the epitaxial layer on a substrate. The epitaxial wafer is produced by adopting a metal organic chemical vapor deposition process, the working temperature is 700-1100 ℃, raw materials such as trimethyl gallium, ammonia and the like are conveyed into a metal organic chemical vapor deposition system through different pipelines in the production process, simple substances such as gallium, ammonia and the like are decomposed in a special equipment reaction chamber, and a thin film single crystal of gallium nitride and alloys thereof is deposited on a substrate. After the epitaxial wafer is produced, equipment is required to be used for detecting to judge whether the epitaxial wafer meets the use standard, but the existing detection process is complicated, so that the detection efficiency of the epitaxial wafer is low.
Disclosure of Invention
The invention aims to provide an integrated system for detecting monocrystalline silicon epitaxial wafers, which greatly improves the detection efficiency of epitaxial wafers.
The invention aims at realizing the following technical scheme:
the utility model provides an integrated system is used in monocrystalline silicon epitaxial wafer detection, includes workstation and safety cover, blowing device and detection mechanism, processing has the chamber of placing the epitaxial wafer on the workstation, places the chamber surface and has placed the lamp plate, places chamber mid-mounting and has the revolving stage, and workstation surface one side articulates there is with places chamber complex safety cover, and the inner wall top of safety cover is equipped with the photosensitive element with lamp plate complex, and the blowing device of placing the revolving stage with the epitaxial wafer in is installed to workstation surface opposite side, place the detecting mechanism that detects the epitaxial wafer on the intracavity wall telescopically installs.
The lamp panel is provided with a honeycomb cover, and the honeycomb cover is annular.
The discharging device comprises a linear guide rail, guide rail seats, mechanical arms and sucker assemblies, wherein a material storage disc and a material discharging disc are respectively arranged on work tables at two ends of the linear guide rail, the distances from the material storage disc and the material discharging disc to a rotary table are equal, two guide rail seats are arranged on the linear guide rail, the mechanical arms are respectively arranged on each guide rail seat, the sucker assemblies for sucking epitaxial wafers are arranged at the extending ends of the mechanical arms, and the distance between the two sucker assemblies is equal to the distance from the rotary table to the material storage disc or the material discharging disc.
The storage tray and the discharge tray are respectively provided with a plurality of grooves for placing epitaxial wafers, the grooves are uniformly distributed on the surfaces of the storage tray and the discharge tray in an annular shape, and the bottoms of the storage tray and the discharge tray are respectively provided with a motor for rotating the storage tray and the discharge tray.
The inner wall of the placing cavity is provided with a hollow groove, a telescopic cylinder is arranged in the hollow groove, and a detection mechanism is arranged at the extending end of the telescopic cylinder.
The detecting mechanism comprises a mounting plate, clamping pieces, a motor, rotating rollers, spotlights and light-sensitive cameras, wherein the mounting plate is vertically arranged at the extending end of a telescopic cylinder, the clamping pieces which are equal in height with the surface of the rotary table are vertically arranged on the side wall of the mounting plate, two rotatable rotating rollers are arranged on the inner wall surface of the clamping pieces, the motor is arranged on the inner side of the clamping pieces, a gear set which is meshed with each other is arranged on an output shaft of the motor, the two rotating rollers are connected with the corresponding gear set through flexible shafts, the spotlights which incline are respectively arranged on the upper side wall and the lower side wall of one side of the clamping pieces, the illumination directions of the spotlights face the surface and the bottom surface of an epitaxial wafer, a connecting plate is arranged on the spotlight, and a light-sensitive camera which shoots the light reflection of the spotlights is arranged on the connecting plate, and a micro-distance measuring instrument is arranged on the upper side wall and the lower side wall of the other side of the clamping pieces.
The surface of the rotary roller is sleeved with a silica gel damping sleeve.
The spotlight comprises a shell and a lamp tube arranged in the shell, wherein the shell is composed of a spotlight part and a light-emitting part which are integrally formed, the spotlight part is cylindrical, the light-emitting part is processed on the outer wall of the spotlight part, the section of the light-emitting part is conical, the inner wall of the light-emitting part is in smooth transition with the inner wall of the spotlight part, and a through groove is processed at the end part of the light-emitting part.
The rotary table comprises a supporting flange, a linear bearing and a limiting shaft, wherein the limiting shaft is fixed in the middle of the placing cavity, the supporting flange is rotatably arranged on the limiting shaft through the linear bearing, an infrared temperature sensor for detecting the temperature of an epitaxial wafer is arranged in the middle of the limiting shaft, and one side of the supporting flange is provided with a sponge buffer cushion.
The integrated system for detecting the monocrystalline silicon epitaxial wafer has the beneficial effects that:
(1) By arranging the material placing device and the detecting mechanism on the workbench, the continuous detection of the epitaxial wafer can be realized, the temperature, thickness, flatness and the area of the epitaxial wafer can be detected at the same time, the detection efficiency of the epitaxial wafer is improved, and the production efficiency of the epitaxial wafer is ensured;
(2) Through setting up detection mechanism, can cooperate rotatory roller to make epitaxial wafer rotate after the grip piece cliies the epitaxial wafer, shines the epitaxial wafer through the spotlight when epitaxial wafer rotates, can clearly shoot the roughness on epitaxial wafer surface through the light sense camera simultaneously, has made things convenient for the detection of epitaxial wafer surface glossiness;
(3) The light plate is arranged in the placing cavity, and the honeycomb cover is arranged on the light plate, so that the light emitted by the light plate is vertically upwards, and the area of the epitaxial wafer can be rapidly measured by matching with the photosensitive element on the protective cover;
(4) The rotating table is arranged in the placing cavity, so that the epitaxial wafer can be conveniently supported, and meanwhile, the epitaxial wafer can be conveniently detected by the detection mechanism, and the epitaxial wafer is effectively prevented from being damaged;
(5) Through setting up the holder to install spotlight and microspur measuring apparatu on the lateral wall of holder, can detect epitaxial wafer's surface and bottom surface simultaneously, improved the efficiency of detection.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram provided in an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a rotary table according to an embodiment of the present invention.
Fig. 3 is a top view structural diagram of a discharging device provided by an embodiment of the invention.
Fig. 4 is a side view of a detection mechanism according to an embodiment of the present invention.
Fig. 5 is a top view of a detection mechanism according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a spotlight according to an embodiment of the present invention.
Reference numerals: 1. a work table; 11. a placement cavity; 12. a hollow groove; 2. a telescopic cylinder; 3. a lamp panel; 31. a honeycomb cover; 4. a rotary table; 41. a support flange; 42. a linear bearing; 43. a limiting shaft; 44. a sponge cushion pad; 45. an infrared temperature sensor; 5. a protective cover; 51. a photosensitive element; 6. a discharging device; 61. a linear guide rail; 62. a guide rail seat; 63. a mechanical arm; 64. a suction cup assembly; 65. a stock tray; 66. a discharging disc; 67. a groove; 68. a motor; 7. a detection mechanism; 71. a mounting plate; 72. a clamping member; 73. a motor; 74. rotating the roller; 75. silica gel damping sleeve; 76. a spotlight; 761. a housing; 762. a light-gathering section; 763. a light emitting section; 764. a through groove; 765. a lamp tube; 77. a light-sensitive camera; 78. a macro gauge; 79. a flexible shaft.
Detailed Description
Examples
As shown in fig. 1 to 6, the integrated system for detecting a monocrystalline silicon epitaxial wafer provided by the embodiment comprises a workbench 1, a protective cover 5, a discharging device 6 and a detecting mechanism 7, a placing cavity 11 for placing the monocrystalline silicon epitaxial wafer is processed on the workbench 1, a lamp panel 3 is placed on the surface of the placing cavity 11, the lamp panel 3 is formed by a plurality of LED lamp discharging materials, a honeycomb cover 31 is installed on the lamp panel 3, the honeycomb cover 31 is annular, the honeycomb cover 31 is made of black materials, the purpose of the integrated system is to enable light emitted by the lamp panel 3 to vertically irradiate upwards so as to be convenient for quickly reading out the forward projection area of the monocrystalline silicon epitaxial wafer, the measuring speed of the surface of the monocrystalline silicon epitaxial wafer is improved, a rotary table 4 is installed in the middle of the placing cavity 11, the rotary table 4 is used for supporting the monocrystalline silicon epitaxial wafer so as to be convenient for detection, the protective cover 5 matched with the placing cavity 11 is hinged on one side of the surface of the workbench 1, the inner wall top of the protective cover 5 is provided with a photosensitive element 51 matched with the lamp panel 3, the photosensitive element 51 is matched with the honeycomb cover 31 to be realized, the honeycomb cover 31 is specifically operated, the area of the lamp panel 3 is known, the area of the protective cover 3 is subtracted, the forward projection area of the wafer 3 is made of the protective cover is made of black material, the front projection area of the wafer is subtracted, the front projection area of the photosensitive wafer is not required to be detected on the surface of the rotary table 6, the epitaxial wafer is detected on the surface of the epitaxial wafer is detected, and the epitaxial wafer is not is detected on the surface of the rotary table 4, and the epitaxial wafer is detected, and the surface of the epitaxial wafer is not is detected.
As shown in fig. 2, for facilitating the detection of the epitaxial wafer of monocrystalline silicon, the rotary table 4 comprises a support flange 41, a linear bearing 42 and a limiting shaft 43, the limiting shaft 43 is fixed in the middle of the placing cavity 11, the support flange 41 is rotatably mounted on the limiting shaft 43 through the linear bearing 42, an infrared temperature sensor 45 for detecting the temperature of the epitaxial wafer is mounted in the middle of the limiting shaft 43, a sponge buffer pad 44 is mounted on one side of the surface of the support flange 41, and the sponge buffer pad 44 can effectively protect the safety of placing the epitaxial wafer of monocrystalline silicon on the rotary table 4.
As shown in fig. 3, in order to increase the discharging speed, a new discharging device 6 is designed, the discharging device 6 includes a linear guide rail 61, a guide rail seat 62, a mechanical arm 63 and a suction cup assembly 64, a tray 65 and a tray 66 are respectively disposed on the working tables 1 at two ends of the linear guide rail 61, the distances between the tray 65 and the tray 66 and the rotary table 4 are equal, two guide rail seats 62 are mounted on the linear guide rail 61, the mechanical arm 63 is mounted on each guide rail seat 62, the suction cup assembly 64 for sucking up the epitaxial wafer is mounted at the extending end of the mechanical arm 63, the distance between the two suction cup assemblies 64 is equal to the distance between the rotary table 4 and the tray 65 or the tray 66, a plurality of grooves 67 for placing the epitaxial wafer are disposed on the tray 65 and the tray 66, the grooves 67 are uniformly distributed on the surfaces of the storage tray 65 and the discharge tray 66 in an annular shape, motors 68 for rotating the storage tray 65 and the discharge tray 66 are arranged at the bottoms of the storage tray 65 and the discharge tray 66 respectively, the two mechanical arms 63 work simultaneously, one mechanical arm 63 clamps the detected monocrystalline silicon epitaxial wafer when the storage tray 65 clamps the monocrystalline silicon epitaxial wafer to be detected, the two guide rail seats 62 move along the linear guide rail 61 to place the monocrystalline silicon epitaxial wafer to be detected on the rotary table 4, the detected monocrystalline silicon epitaxial wafer is placed in the discharge tray 66, the guide rail seats 62 are reset, and the storage tray 65 and the discharge tray 66 rotate a station under the action of the motors 68 so as to facilitate the next material taking and discharging, and accordingly the clamping efficiency of the monocrystalline silicon epitaxial wafer is improved.
As shown in fig. 4-6, the inner wall of the placing cavity 11 is processed with a hollow groove 12, a telescopic cylinder 2 is installed in the hollow groove 12, a detection mechanism 7 is installed at the extending end of the telescopic cylinder 2, the detection mechanism 7 is driven by the telescopic cylinder 2 to approach or separate towards the monocrystalline silicon epitaxial wafer, so as to prevent the detection mechanism 7 from blocking the picking and placing of the monocrystalline silicon epitaxial wafer, the safety of the monocrystalline silicon epitaxial wafer is ensured, the detection mechanism 7 comprises a mounting plate 71, a clamping piece 72, a motor 73, a rotary roller 74, a spotlight 76 and a light-sensitive camera 77, the mounting plate 71 is vertically installed at the extending end of the telescopic cylinder 2, a clamping piece 72 with the same height as the surface of the rotary table 4 is vertically installed on the side wall of the mounting plate 71, two rotatable rotary rollers 74 are installed on the inner wall surface of the clamping piece 72, a silica gel damping sleeve 75 is sleeved on the surface of the rotary roller 74, the motor 73 is installed on the inner side of the clamping piece 72, the output shaft of the motor 73 is provided with a gear set which is meshed with each other, the two rotary rollers 74 are connected with the corresponding gear set through a flexible shaft 79, the clamping piece 72 drives the rotary rollers 74 to rotate through the flexible shaft 79 after clamping the monocrystalline silicon epitaxial wafer, the monocrystalline silicon epitaxial wafer can be rotated by utilizing the motor 73 so as to detect the monocrystalline silicon epitaxial wafer, the upper side wall and the lower side wall of one side of the clamping piece 72 are respectively provided with an inclined spotlight 76, the spotlight 76 comprises a housing 761 and a lamp tube 765 arranged in the housing 761, the housing 761 is composed of an integrally formed spotlight part 762 and a light emergent part 763, the spotlight part 762 is cylindrical, the outer wall of the spotlight part 762 is provided with a light emergent part 763, the section of the light emergent part 763 is conical, the inner wall of the light emergent part 763 is in smooth transition with the inner wall of the spotlight part 762, the end part of the light emergent part 763 is provided with a through groove 764, the light focusing part 762 can collect light and then emit the light along the through groove 764, so that the light focusing effect of the spotlight 76 can be improved, the illumination direction of the spotlight 76 faces the surface and the bottom surface of the epitaxial wafer, a connecting plate is arranged on the spotlight 76, a light sensing camera 77 for shooting the reflection of the spotlight 76 is arranged on the connecting plate, as the light emitted by the spotlight 76 from the through groove 764 is a straight line, if the shot line has bending and uneven thickness, the surface of the monocrystalline silicon epitaxial wafer is uneven, otherwise, the surface of the monocrystalline silicon epitaxial wafer is flat, the surface flatness of the monocrystalline silicon epitaxial wafer can be conveniently detected through the spotlight 76 and the light sensing camera 77, the detection efficiency is improved, a micro-distance measuring instrument 78 is arranged on the upper side wall and the lower side wall of the other side of the clamping piece 72, and the thickness of the monocrystalline silicon epitaxial wafer can be measured through the micro-distance measuring instrument 78.
The application method of the invention is as follows:
before use, place the monocrystalline silicon epitaxial wafer that waits to detect in stock tray 65, then inhale monocrystalline silicon epitaxial wafer through sucking disc subassembly 64 on arm 63, and place monocrystalline silicon epitaxial wafer on revolving stage 4 along linear guide 61, then cover safety cover 5, this moment the upper photosensitive element 51 of safety cover 5 is parallel with lamp plate 3, and start lamp plate 3, under the effect of honeycomb cover 31, the light that lamp plate 3 sent is with monocrystalline silicon epitaxial wafer's area orthographic projection on photosensitive element 51, so that acquire monocrystalline silicon epitaxial wafer's area data fast, simultaneously infrared temperature sensor 45 detects monocrystalline silicon epitaxial wafer's temperature, then the cylinder drives detection mechanism 7 and stretches out, the holder 72 on detection mechanism 7 is with monocrystalline silicon epitaxial wafer centre gripping between two silica gel damper sleeves 75, then start motor 73, motor 73 is through the gear train intermeshing, make two silica gel damper sleeves 75 slowly promote monocrystalline silicon epitaxial wafer along 4 low-speed rotation under the effect of rotatory roller 74, this moment, shine on monocrystalline silicon epitaxial wafer's area, then light sensor 77, and the flatness represents the evenness of monocrystalline silicon epitaxial wafer if the revolving stage, if the evenness of monocrystalline silicon epitaxial wafer has appeared, the evenness is high, then represents the evenness of the appearance.
The foregoing is merely a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modification and substitution based on the technical scheme and the inventive concept provided by the present invention should be covered in the scope of the present invention. It should be noted that the structures or components illustrated in the drawings are not necessarily drawn to scale, and that descriptions of well-known components and processing techniques and procedures are omitted so as not to unnecessarily limit the present invention.
Claims (4)
1. An integrated system for detecting monocrystalline silicon epitaxial wafers is characterized in that: comprises a workbench, a protective cover, a discharging device and a detection mechanism, wherein a placing cavity for placing an epitaxial wafer is processed on the workbench, a lamp panel is placed on the surface of the placing cavity, a honeycomb cover is installed on the lamp panel, the honeycomb cover is annular, a rotary table is installed in the middle of the placing cavity, one side of the surface of the workbench is hinged with the protective cover matched with the placing cavity, a photosensitive element matched with the lamp panel is arranged on the top of the inner wall of the protective cover, a discharging device for placing the epitaxial wafer into the rotary table is installed on the other side of the surface of the workbench, the discharging device comprises a linear guide rail, a guide rail seat, a mechanical arm and a sucker assembly, a material storage disc and a material discharge disc are respectively arranged on the workbench at two ends of the linear guide rail, the distances between the material storage disc and the rotary table are equal, a plurality of grooves for placing the epitaxial wafer are formed in the material storage disc and the material discharge disc, the grooves are uniformly distributed on the surfaces of the storage tray and the discharge tray in a ring shape, the bottoms of the storage tray and the discharge tray are respectively provided with a motor for rotating the storage tray and the discharge tray, two guide rail seats are arranged on the linear guide rail, a mechanical arm is arranged on each guide rail seat, a sucker component for sucking an epitaxial wafer is arranged at the extending end of the mechanical arm, the distance between the two sucker components is equal to the distance between the rotary table and the storage tray or the discharge tray, a detection mechanism for detecting the epitaxial wafer is arranged on the inner wall of the placing cavity in a telescopic way, a hollow groove is processed on the inner wall of the placing cavity, a telescopic cylinder is arranged in the hollow groove, a detection mechanism is arranged at the extending end of the telescopic cylinder, the detection mechanism comprises a mounting plate, a clamping piece, a motor, a rotary roller, a spotlight and a light sensing camera, the mounting plate is vertically arranged at the extending end of the telescopic cylinder, the mounting panel is close to vertical installed on the lateral wall of revolving stage with the high holder in revolving stage surface, holder inner wall surface mounting has two rotatable rotatory rollers, and the motor is installed to the holder inboard, installs intermeshing's gear train on the output shaft of motor, and two rotatory rollers pass through the flexible axle and are connected with corresponding gear train, all install the spotlight of slope on the upper sidewall and the lower lateral wall of holder one side, the illumination direction of spotlight is towards epitaxial wafer surface and bottom surface, installs the connecting plate on the spotlight, installs the light-sensitive camera of shooting spotlight reflection of light on the connecting plate, all installs the microspur measuring apparatu on the upper sidewall and the lower lateral wall of holder opposite side.
2. The integrated system for detecting a silicon single crystal epitaxial wafer according to claim 1, wherein: the surface of the rotary roller is sleeved with a silica gel damping sleeve.
3. The integrated system for detecting a silicon single crystal epitaxial wafer according to claim 1, wherein: the spotlight comprises a shell and a lamp tube arranged in the shell, wherein the shell is composed of a spotlight part and a light-emitting part which are integrally formed, the spotlight part is cylindrical, the light-emitting part is processed on the outer wall of the spotlight part, the section of the light-emitting part is conical, the inner wall of the light-emitting part is in smooth transition with the inner wall of the spotlight part, and a through groove is processed at the end part of the light-emitting part.
4. The integrated system for detecting a silicon single crystal epitaxial wafer according to claim 1, wherein: the rotary table comprises a supporting flange, a linear bearing and a limiting shaft, wherein the limiting shaft is fixed in the middle of the placing cavity, the supporting flange is rotatably arranged on the limiting shaft through the linear bearing, an infrared temperature sensor for detecting the temperature of an epitaxial wafer is arranged in the middle of the limiting shaft, and one side of the supporting flange is provided with a sponge buffer cushion.
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| CN116878363B (en) * | 2023-09-08 | 2023-12-29 | 弘润半导体(苏州)有限公司 | Surface roundness detection device for columnar monocrystalline silicon raw material |
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