CN108456864A - The defects of the growth apparatus and epitaxial layer growth process of epitaxial layer detection method - Google Patents

The defects of the growth apparatus and epitaxial layer growth process of epitaxial layer detection method Download PDF

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Publication number
CN108456864A
CN108456864A CN201711463957.XA CN201711463957A CN108456864A CN 108456864 A CN108456864 A CN 108456864A CN 201711463957 A CN201711463957 A CN 201711463957A CN 108456864 A CN108456864 A CN 108456864A
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epitaxial layer
region
measured
growth
testing image
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CN201711463957.XA
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Chinese (zh)
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向光胜
叶青贤
喻海波
蔡云聪
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华灿光电(浙江)有限公司
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Priority to CN201711463957.XA priority Critical patent/CN108456864A/en
Publication of CN108456864A publication Critical patent/CN108456864A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52Means for observation of the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/16Controlling or regulating

Abstract

The invention discloses the defects of a kind of growth apparatus of epitaxial layer and epitaxial layer growth process detection methods, belong to technical field of semiconductors.The growth apparatus includes reaction chamber and detection device, and detection device includes light source module, for providing the ultraviolet light on the epitaxial layer being irradiated in growth;Image collection module, for obtaining ultraviolet light generated testing image on epitaxial layer at the end of at least one growth phase;Processing module, epitaxial layer at the end of for growing to growth phase according to the judgement of the gray scale of testing image whether there is defect, it is radiated at generated testing image on epitaxial layer by obtaining current growth phase ultraviolet light, judge that epitaxial layer whether there is defect further according to the gray scale of testing image, the defect formed in epitaxial layer growth process can be timely feedbacked when defect occurs in epitaxial layer growth, personnel easy to operation in time adjust the growth of epitaxial layer, the internal flaw for advantageously reducing epitaxial layer improves the yield of epitaxial wafer.

Description

The defects of the growth apparatus and epitaxial layer growth process of epitaxial layer detection method

Technical field

The present invention relates to technical field of semiconductors, more particularly to the growth apparatus and epitaxial layer growth process of a kind of epitaxial layer The defects of detection method.

Background technology

LED (Light Emitting Diode, light emitting diode) has many advantages, such as small, long lifespan, low in energy consumption, mesh Before be widely used in automobile signal light, traffic lights, display screen and lighting apparatus.It is most heavy in the manufacturing process of LED What is wanted is the making of epitaxial wafer, and epitaxial wafer includes the epitaxial layer of substrate and growth on substrate, and the quality of epitaxial layer is for LED's Quality has strong influence.

In order to improve the quality of LED, reduces defect ware and need to examine epitaxial layer usually after epitaxial wafer is made It surveys, or after LED chip is made, single LED chip is detected, to determine in epitaxial layer or LED chip Each region whether there is defect.

Since the detection of existing epitaxial layer can only all carry out after outer layer growth is completed, and after the completion of outer layer growth Defect inside epitaxial layer has just formd, therefore existing detection can only be convenient for rejecting defective epitaxial wafer or LED Chip can not reduce the defect inside epitaxial layer, improve the yield of epitaxial wafer.

Invention content

In order to reduce the defect inside epitaxial layer, the yield of epitaxial wafer is improved, an embodiment of the present invention provides a kind of defects Detection device and detection method.The technical solution is as follows:

On the one hand, an embodiment of the present invention provides a kind of growth apparatus of epitaxial layer, the growth apparatus includes reaction chamber Room, the growth apparatus further include detection device, and the detection device is arranged in the reaction chamber, the detection device packet It includes:

Light source module, for providing the ultraviolet light on the epitaxial layer being irradiated in growth;

Image collection module, for obtaining the ultraviolet light at the end of at least one growth phase in the extension Testing image caused by layer;

Processing module, described in being grown at the end of the growth phase according to the judgement of the gray scale of the testing image Epitaxial layer whether there is defect.

Optionally, the processing module includes:

Selection unit, for choosing multiple regions to be measured on the testing image, the multiple region to be measured does not weigh mutually The set in folded and the multiple region to be measured covers the testing image, the shape and area and standard picture in the region to be measured Identical, the standard picture is the image of flawless epitaxial layer at the end of growing to the growth phase;

Acquiring unit, the gray value of each pixel for obtaining each region to be measured on the testing image;

Comparing unit, the gray value of each pixel for each region to be measured on the testing image with The gray value of each pixel of the standard picture determines whether is region on the epitaxial layer corresponding to each region to be measured Existing defects.

Specifically, the comparing unit is used for,

In the region to be measured, gray value is more than pre- higher than the pixel quantity of the gray value of the pixel of the standard picture When definite value, the region existing defects on the epitaxial layer corresponding to the region to be measured are judged;

In the region to be measured, gray value is less than higher than the pixel quantity of the gray value of the pixel of the standard picture When predetermined value, judge that defect is not present in the region on the epitaxial layer corresponding to the region to be measured.

Specifically, the predetermined value is 1~3% of the pixel quantity in the region to be measured.

Optionally, described image acquisition module for obtaining the ultraviolet light respectively at the end of each growth phase Generated testing image on said epitaxial layer there.

Optionally, the light source module includes:

Light source, for providing the ultraviolet light;

Adjustment unit, the outgoing intensity for adjusting the ultraviolet light.

On the other hand, an embodiment of the present invention provides a kind of the defects of epitaxial layer growth process detection method, features It is, the detection method includes:

Ultraviolet lighting is mapped on the epitaxial layer in growth;

It is generated to be measured on said epitaxial layer there that the ultraviolet light is obtained at the end of at least one growth phase Image;

Whether the epitaxial layer at the end of growing to the growth phase according to the judgement of the gray scale of the testing image is deposited In defect.

Optionally, described to judge that the epitaxial layer grown at the end of the growth phase is according to the testing image No existing defects, including:

It chooses multiple regions to be measured on the testing image, the multiple region non-overlapping copies to be measured and the multiple waits for The set for surveying region covers the testing image, and the shape and area in the region to be measured are identical as standard picture, the standard Image is the image of flawless epitaxial layer at the end of growing to the growth phase;

Obtain the gray value of each pixel in each region to be measured on the testing image;

Compare the gray value of each pixel in each region to be measured on the testing image and the standard picture Each pixel gray value, determine that region on the epitaxial layer corresponding to each region to be measured whether there is defect.

Specifically, the gray value with the standard picture of each pixel in more each region to be measured is each The gray value of pixel determines that the region on the epitaxial layer corresponding to each region to be measured whether there is defect, including:

In the region to be measured, gray value is more than pre- higher than the pixel quantity of the gray value of the pixel of the standard picture When definite value, the region existing defects on the epitaxial layer corresponding to the region to be measured are judged;

In the region to be measured, gray value is less than higher than the pixel quantity of the gray value of the pixel of the standard picture When predetermined value, judge that defect is not present in the region on the epitaxial layer corresponding to the region to be measured.

Optionally, described that ultraviolet light institute on said epitaxial layer there is obtained at the end of at least one growth phase The testing image of generation, including:

It is generated to be measured on said epitaxial layer there to obtain the ultraviolet light respectively at the end of each growth phase Image.

The advantageous effect that technical solution provided in an embodiment of the present invention is brought is:Pass through the extension in ultraviolet light irradiation growth Layer, and obtain current growth phase ultraviolet light and be radiated at generated testing image on epitaxial layer, further according to the ash of testing image Degree judge grow to the current generation epitaxial layer whether there is defect, so as to epitaxial layer growth there is defect when, in time The defect formed in feedback extension layer growth course, personnel easy to operation in time adjust the growth of epitaxial layer, after avoiding Defect further expands in continuous growth course, advantageously reduces the internal flaw of epitaxial layer, improves the yield of epitaxial wafer.

Description of the drawings

To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings Attached drawing.

Fig. 1 is a kind of partial structural diagram of the growth apparatus of epitaxial wafer provided in an embodiment of the present invention;

Fig. 2 is a kind of structural schematic diagram of existing epitaxial wafer;

Fig. 3 is a kind of structural schematic diagram of processing module provided in an embodiment of the present invention;

Fig. 4 is a kind of flow chart of the defects of epitaxial wafer growth course provided in an embodiment of the present invention detection method;

Fig. 5 is the flow chart of the defects of another epitaxial wafer growth course provided in an embodiment of the present invention detection method.

Specific implementation mode

To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention Formula is described in further detail.

Fig. 1 is a kind of partial structural diagram of the growth apparatus of epitaxial wafer provided in an embodiment of the present invention, such as Fig. 1 institutes Show, which includes reaction chamber and detection device, and detection device is arranged in reaction chamber.

Detection device includes light source module 101, image collection module 102 and processing module 103.

Wherein, light source module 101 is used to provide the ultraviolet light on the epitaxial wafer 200 being irradiated in growth.Image obtains mould Block 102 is used to obtain ultraviolet light at the end of at least one growth phase generated on the epitaxial layer of epitaxial wafer 200 Testing image.Processing module 103 is used to be judged to grow to the epitaxial layer at the end of the growth phase according to the gray scale of testing image With the presence or absence of defect.

The embodiment of the present invention obtains current growth phase ultraviolet light irradiation by the epitaxial layer in ultraviolet light irradiation growth The generated testing image on epitaxial layer, further according to testing image gray scale judge grow to the current generation epitaxial layer whether Existing defects, so as to when defect occurs in epitaxial layer growth, timely feedback the defect formed in epitaxial layer growth process, just The growth of epitaxial layer is adjusted in time in operating personnel, defect further expands during avoiding subsequent growth, is conducive to The internal flaw for reducing epitaxial layer, improves the yield of epitaxial wafer.

Fig. 2 is a kind of structural schematic diagram of existing epitaxial wafer, and in practical applications, epitaxial wafer 200 may include substrate 201 and the epitaxial layer that is formed on substrate 201, epitaxial layer may include the N-type layer 202 being sequentially laminated on substrate 201, active Layer 203, P-type layer 204, conductive layer 205 and passivation protection layer 206 have defect 200a inside epitaxial layer.Outside different Prolong piece, the structure of epitaxial layer may also be different, such as further include distributed bragg reflector mirror, GaN bufferings in partial epitaxial layer Layer etc..The growth course of epitaxial layer includes multiple and different growth phase, and each growth phase grows different layer structures, such as Growth phase including growing N-type layer 202, grows the growth phase of active layer 203, the growth phase etc. of growing P-type layer 204.

Optionally, image collection module 102 can be used for obtaining ultraviolet light respectively at the end of each growth phase The generated testing image on epitaxial layer.

Such as a testing image is obtained after having grown N-type layer 202, and one-time detection is carried out, N-type has been grown with detection It whether there is defect in epitaxial layer after layer 202.It obtains a testing image again after having grown active layer 203, and carries out again One-time detection has been grown in the epitaxial layer after active layer 203 with detection and whether there is defect.It is obtained once for one layer by every growth Whether testing image carries out one-time detection, can not only detect defective in epitaxial layer, but also can also detect that each layer In it is whether defective, personnel easy to operation are adjusted to reduce the defects of subsequent growth growth conditions, advantageously reduce The defect formed in epitaxial layer improves the quality of finally formed epitaxial layer, to improve the yield of epitaxial wafer.

Referring to Fig.1, light source module 101 and image collection module 102 can be located at the same of the epitaxial wafer 200 in growth Side, and image collection module 102 can be located at the side of the separate epitaxial wafer 200 of light source module 101, light source module 101 is external The surface for prolonging piece 200 carries out the irradiation of ultraviolet light, and image collection module 102 then receives the ultraviolet light reflected by epitaxial wafer 200, with Obtain testing image corresponding with current growth phase.Since epitaxial layer includes the multilayered structure of stacking, ultraviolet light is penetrating It can also be reflected in two layers adjacent of interface while epitaxial layer, the more strong then reflected light of epitaxial layer translucency is weaker, thoroughly It is stronger to penetrate light, on the contrary the more weak then reflected light of translucency is stronger, and transmitted light is weaker, therefore can be received by image collection module 102 To the ultraviolet light of reflection, testing image is formed.And in the epitaxial layer, defective region and flawless region translucency exist Difference can cause the intensity of the ultraviolet light of defective region reflection to be different from flawless region, specific manifestation on the image, Defective region and flawless region light and shade difference.

Processing module 103 can be electrically connected with image collection module 102.

Optionally, light source module 101 may include light source 1011 and adjustment unit 1012, wherein light source 1011 is for carrying For ultraviolet light, adjustment unit 1012 is used to adjust the outgoing intensity of ultraviolet light.So that image collection module 102 can be got Stablize clearly testing image, it specifically can be strong with the outgoing for increasing or reducing ultraviolet light by the power of adjusting light source 1011 Degree, makes clearly identify different light and shade regions on the testing image to be formed.

Preferably, the advantages of light source 1011 can be ultraviolet LED, and ultraviolet LED has service life long, and low energy consumption, favorably In reducing cost.When realization, the emission wavelength of light source can be 260nm~420nm.

As shown in Figure 1, light source module 101 may include two light sources 1011, and two interval of light source 1011 settings, two light Gorgeous 1011 send out ultraviolet light to epitaxial wafer 200 simultaneously, and the ultraviolet light of reflection is then by the interval between two light sources 1011, by image Acquisition module 102 obtains.

Optionally, image collection module 102 can be photoelectric sensor, be specifically as follows CCD (English:Charge- Coupled Device, Chinese:Charge coupled cell) or CMOS (English:Complementary Metal Oxide Semiconductor, Chinese:Complementary metal oxide semiconductor).

Fig. 3 is a kind of structural schematic diagram of processing module provided in an embodiment of the present invention, as shown in figure 3, processing module 103 May include selection unit 1031, acquiring unit 1032 and comparing unit 1033, wherein selection unit 1031 is for waiting for mapping Multiple regions to be measured are chosen as upper, the set covering in multiple region non-overlapping copies to be measured and multiple regions to be measured entirely waits for mapping Picture, the shape and area in region to be measured are identical as standard picture, and standard picture is that grow to current growth phase flawless The image of epitaxial layer.Acquiring unit 1032 is used to obtain the gray value of each pixel in each region to be measured on testing image. Comparing unit 1033 be used to compare each pixel in each region to be measured on testing image gray value and standard picture it is each The gray value of a pixel determines that the region on the epitaxial layer corresponding to each region to be measured whether there is defect.

Wherein, ranging from the 0~255 of gray value.The gray value of pixel is bigger, shows that the brightness of pixel is bigger, the pixel The ultraviolet light of corresponding region reflection is stronger, i.e., the translucency in the region corresponding to the pixel is poorer.The gray value of pixel is got over Greatly, show that the translucency in the region corresponding to the pixel is poorer, then on the epitaxial layer corresponding to the region to be measured where the pixel Area defects it is more serious.Conversely, the gray value of pixel is smaller, show that the translucency in the region corresponding to the pixel is better, then The area defects on the epitaxial wafer corresponding to region to be measured where the pixel are slighter.

It should be noted that there are one corresponding standard pictures for each growth phase, so that can accurately detect Whether defective go out.

In practical applications, the standard picture of each growth phase can be taking human as in the image obtained from image collection module Selection obtains, and specifically one piece can be chosen respectively from the image for each growth phase that image collection module obtains, as right The standard picture for answering growth phase, by the standard picture pair of the image and corresponding growth phase in the region to be measured of certain growth phase Than.It can also pre-set, such as by way of experiment, figure of the one piece of qualified epitaxial layer of acquisition in each growth phase Picture chooses standard picture of the multiple regions as corresponding growth phase using these images as sample from sample, by certain throughout one's life When region to be measured on the testing image in long stage is compared with the standard picture of corresponding growth phase, it can choose and wait for mapping As upper same area is as region to be measured.In addition a region on sample can also only be chosen as corresponding growth phase Standard picture, the arbitrary region to be measured on testing image are compared with the same region on sample.

Specifically, selection unit may include marquee, and when choosing, marquee can be placed on testing image, point Multiple and different regions that Xuan Qu be in testing image do not have to obtain multiple regions to be measured between plurality of region to be measured Lap.

Specifically, comparing unit 1033 can be used in region to be measured, ash of the gray value higher than the pixel of standard picture When the pixel quantity of angle value is more than predetermined value, the region existing defects on the epitaxial layer corresponding to region to be measured are judged;When to be measured In region, when gray value is less than predetermined value higher than the pixel quantity of the gray value of the pixel of standard picture, region to be measured is judged Defect is not present in region on corresponding epitaxial layer.Due to epitaxial layer inevitably will produce in growth course it is certain Defect, therefore can not possibly accomplish to be completely absent defect, as long as the quantity of defect controls within predetermined value, so that it may so that extension The quality of layer meets the needs of production, therefore control can consider that this is to be measured when within predetermined value when the defects of region to be measured Defect is not present in region.

Preferably, predetermined value can be 1~3% of the pixel quantity in region to be measured, and predetermined value is set as 1~3% The epitaxial wafer produced can be made to meet most production needs, it is contemplated that for different production requirements, made a reservation for The setting of value can also be different, when higher to the quality requirement of epitaxial wafer in production, then can by predetermined value be arranged 1% with Under, such as 0.6%, when relatively low to the quality requirement of epitaxial wafer in production, then predetermined value can be arranged 3% or more, example Such as 3.5%.

Fig. 4 is a kind of flow chart of the defects of epitaxial layer growth process provided in an embodiment of the present invention detection method, should Detection method is suitable for the growth apparatus of epitaxial layer shown in FIG. 1, as shown in figure 4, the detection method includes:

S11:Ultraviolet lighting is mapped on the epitaxial layer in growth.

When realization, step S11 can be executed by light source module above-mentioned.

S12:Ultraviolet light generated testing image on epitaxial layer is obtained at the end of at least one growth phase.

When realization, step S12 can be executed by image collection module above-mentioned.

S13:Epitaxial layer at the end of growing to growth phase according to the judgement of the gray scale of testing image whether there is defect.

When realization, step S13 can be executed by processing module above-mentioned.

The embodiment of the present invention obtains current growth phase ultraviolet light irradiation by the epitaxial layer in ultraviolet light irradiation growth The generated testing image on epitaxial layer, further according to testing image gray scale judge grow to the current generation epitaxial layer whether Existing defects, so as to when defect occurs in epitaxial layer growth, timely feedback the defect formed in epitaxial layer growth process, just The growth of epitaxial layer is adjusted in time in operating personnel, defect further expands during avoiding subsequent growth, is conducive to The internal flaw for reducing epitaxial layer, improves the yield of epitaxial wafer.

In addition the speck in testing image can also be observed by the naked eye, the number of speck shows the number of defect.

Fig. 5 is the flow chart of the defects of another epitaxial layer growth process provided in an embodiment of the present invention detection method, The detection method is suitable for the growth apparatus of epitaxial layer shown in FIG. 1, as shown in figure 5, the detection method includes:

S21:Ultraviolet lighting is mapped on the epitaxial layer in growth.

When realization, step S21 can be executed by light source module above-mentioned.

S22:Ultraviolet light generated testing image on epitaxial layer is obtained at the end of at least one growth phase.

When realization, step S22 can be executed by image collection module above-mentioned.

S23:Multiple regions to be measured are chosen on testing image.

Wherein, the set in multiple region non-overlapping copies to be measured and multiple regions to be measured covers testing image, region to be measured Shape and area are identical as standard picture, and standard picture is the image for growing to the flawless epitaxial layer of current growth phase.

When realization, step S23 can be executed by selection unit above-mentioned.

For different quality requirements, the quantity that region to be measured is chosen is also different, and the quantity that region to be measured is chosen is more, then Testing result is more accurate, but correspondingly, and it is also more to detect input cost.

S24:Obtain the gray value of each pixel in each region to be measured on testing image.

When realization, step S24 can be executed by acquiring unit above-mentioned.

S25:Judge that the region on the epitaxial layer corresponding to each region to be measured on testing image whether there is defect.

When realization, step S25 can be executed by comparing unit above-mentioned.

Specifically, in region to be measured, gray value is more than pre- higher than the pixel quantity of the gray value of the pixel of standard picture When definite value, the region existing defects on the epitaxial layer corresponding to region to be measured are judged.

In region to be measured, gray value is less than predetermined value higher than the pixel quantity of the gray value of the pixel of standard picture When, judge that defect is not present in the region on the epitaxial layer corresponding to region to be measured.

Preferably, predetermined value can be 1~3% of the pixel quantity in region to be measured, and predetermined value is set as 1~3% The epitaxial wafer produced can be made to meet most production needs, it is contemplated that for different production requirements, made a reservation for The setting of value can also be different, when higher to the quality requirement of epitaxial wafer in production, then can by predetermined value be arranged 1% with Under, such as 0.6%, when relatively low to the quality requirement of epitaxial wafer in production, then predetermined value can be arranged 1% or more, example Such as 1.5%.

In addition, step S22 can also include:

Obtain ultraviolet light generated testing image on epitaxial layer respectively at the end of each growth phase.

The testing image at the end of multiple and different growth phases can so be got, often obtain a testing image just into Row one-time detection adjusts subsequent growing environment according to the result of detection, in order to further increase the matter of epitaxial layer Amount, provides the yield of epitaxial wafer.

It should be noted that:The growth apparatus for the epitaxial wafer that above-described embodiment provides is lacked in epitaxial wafer growth course Fall into detection when, only the example of the division of the above functional modules, in practical application, can as needed and will be above-mentioned Function distribution is completed by different function module, i.e., the internal structure of device is divided into different function modules, with complete with The all or part of function of upper description.In addition, the growth apparatus for the epitaxial wafer that above-described embodiment provides was grown with epitaxial wafer The defects of journey detection method embodiment belongs to same design, and specific implementation process refers to embodiment of the method, no longer superfluous here It states.

One of ordinary skill in the art will appreciate that realizing that all or part of step of above-described embodiment can pass through hardware It completes, relevant hardware can also be instructed to complete by program, the program can be stored in a kind of computer-readable In storage medium, storage medium mentioned above can be read-only memory, disk or CD etc..

The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of growth apparatus of epitaxial layer, the growth apparatus include reaction chamber, which is characterized in that the growth apparatus is also Including detection device, the detection device is arranged in the reaction chamber, and the detection device includes:
Light source module, for providing the ultraviolet light on the epitaxial layer being irradiated in growth;
Image collection module, for obtaining the ultraviolet light on said epitaxial layer there at the end of at least one growth phase Generated testing image;
Processing module grows to the extension at the end of the growth phase for judging according to the gray scale of the testing image Layer whether there is defect.
2. growth apparatus according to claim 1, which is characterized in that the processing module includes:
Selection unit, for choosing multiple regions to be measured on the testing image, the multiple region non-overlapping copies to be measured and The set in the multiple region to be measured covers the testing image, the shape and area and standard picture phase in the region to be measured Together, the standard picture is the image of flawless epitaxial layer at the end of growing to the growth phase;
Acquiring unit, the gray value of each pixel for obtaining each region to be measured on the testing image;
Comparing unit, the gray value of each pixel for each region to be measured on the testing image with it is described The gray value of each pixel of standard picture determines that the region on the epitaxial layer corresponding to each region to be measured whether there is Defect.
3. growth apparatus according to claim 2, which is characterized in that the comparing unit is used for,
In the region to be measured, gray value is more than predetermined value higher than the pixel quantity of the gray value of the pixel of the standard picture When, judge the region existing defects on the epitaxial layer corresponding to the region to be measured;
In the region to be measured, gray value is less than predetermined higher than the pixel quantity of the gray value of the pixel of the standard picture When value, judge that defect is not present in the region on the epitaxial layer corresponding to the region to be measured.
4. growth apparatus according to claim 3, which is characterized in that the predetermined value is the pixel in the region to be measured The 1~3% of quantity.
5. growth apparatus according to claims 1 to 4, which is characterized in that described image acquisition module is used in each life The ultraviolet light generated testing image on said epitaxial layer there is obtained at the end of the long stage respectively.
6. according to Claims 1 to 4 any one of them growth apparatus, which is characterized in that the light source module includes:
Light source, for providing the ultraviolet light;
Adjustment unit, the outgoing intensity for adjusting the ultraviolet light.
7. a kind of the defects of epitaxial layer growth process detection method, which is characterized in that the detection method includes:
Ultraviolet lighting is mapped on the epitaxial layer in growth;
The ultraviolet light generated testing image on said epitaxial layer there is obtained at the end of at least one growth phase;
The epitaxial layer at the end of growing to the growth phase according to the judgement of the gray scale of the testing image is with the presence or absence of scarce It falls into.
8. detection method according to claim 7, which is characterized in that described to grow to institute according to testing image judgement It states the epitaxial layer at the end of growth phase and whether there is defect, including:
Multiple regions to be measured, the multiple region non-overlapping copies to be measured and the multiple area to be measured are chosen on the testing image The set in domain covers the testing image, and the shape and area in the region to be measured are identical as standard picture, the standard picture The image of flawless epitaxial layer at the end of to grow to the growth phase;
Obtain the gray value of each pixel in each region to be measured on the testing image;
Compare each of the gray value of each pixel in each region to be measured on the testing image and the standard picture The gray value of a pixel determines that the region on the epitaxial layer corresponding to each region to be measured whether there is defect.
9. detection method according to claim 8, which is characterized in that each picture in more each region to be measured The gray value of the gray value of element and each pixel of the standard picture, determines the epitaxial layer corresponding to each region to be measured On region whether there is defect, including:
In the region to be measured, gray value is more than predetermined value higher than the pixel quantity of the gray value of the pixel of the standard picture When, judge the region existing defects on the epitaxial layer corresponding to the region to be measured;
In the region to be measured, gray value is less than predetermined higher than the pixel quantity of the gray value of the pixel of the standard picture When value, judge that defect is not present in the region on the epitaxial layer corresponding to the region to be measured.
10. according to claim 7~9 any one of them growth apparatus, which is characterized in that described at least one growth phase At the end of obtain the ultraviolet light on said epitaxial layer there caused by testing image, including:
Obtain the ultraviolet light generated testing image on said epitaxial layer there respectively at the end of each growth phase.
CN201711463957.XA 2017-12-28 2017-12-28 The defects of the growth apparatus and epitaxial layer growth process of epitaxial layer detection method CN108456864A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102721694A (en) * 2011-03-28 2012-10-10 三星Led株式会社 Apparatus for inspecting light emitting diode and inspecting method using said apparatus
CN104697972A (en) * 2013-12-04 2015-06-10 北京智朗芯光科技有限公司 Epitaxial wafer growth online real-time detection method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102721694A (en) * 2011-03-28 2012-10-10 三星Led株式会社 Apparatus for inspecting light emitting diode and inspecting method using said apparatus
CN104697972A (en) * 2013-12-04 2015-06-10 北京智朗芯光科技有限公司 Epitaxial wafer growth online real-time detection method

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