CN112865735A - Reconfigurable dual-band power amplifier based on PIN switch and control method thereof - Google Patents
Reconfigurable dual-band power amplifier based on PIN switch and control method thereof Download PDFInfo
- Publication number
- CN112865735A CN112865735A CN202011643367.7A CN202011643367A CN112865735A CN 112865735 A CN112865735 A CN 112865735A CN 202011643367 A CN202011643367 A CN 202011643367A CN 112865735 A CN112865735 A CN 112865735A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- circuit
- ground
- power amplifier
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 53
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 230000009977 dual effect Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 description 11
- 238000004088 simulation Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a reconfigurable dual-band power amplifier based on a PIN switch and a control method thereof. The invention adopts the diode with the model number of SMP-1345-; the broadband input matching network designed based on the band-pass filter theory can realize good matching in a frequency band of 1.5GHz-2.5 GHz; the fan-shaped microstrip line is added into the bias circuit, so that the bandwidth of the bias circuit is widened; the power supply has the advantages of miniaturization, simple structure, high switching speed, high output power and efficiency and higher practical value.
Description
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to a reconfigurable dual-band power amplifier based on a PIN switch and a control method thereof.
Background
With the rapid development of 5G communication, the frequency bands and standards of communication gradually increase, the requirements for signal quality and capacity also increase, and various communication systems need to be continuously updated to adapt to multi-standard and multi-mode wireless communication. The performance of the power amplifier, which is an important component of the communication system, directly affects the performance of the entire communication system. It is a necessary trend to analyze different operating states of the power amplifier and study reconfigurable circuit structures. After the reconfigurable multiband power amplifier is introduced into the reconfigurable device, the matching network of the power amplifier has expansibility, the usable working frequency band of the power amplifier is increased, and due to the configurable characteristic of the reconfigurable device, the power amplifier has strong flexibility, can realize the quick switching of the working frequency band, and has wide application prospects in 5G communication and future communication systems. In recent years, researchers at home and abroad strive to realize the design of the reconfigurable multiband power amplifier by using a simpler structure, and promote the development of the reconfigurable multiband power amplifier.
The reconfigurable device comprises an adjustable device and a switch, the adjustable device comprises a variable capacitance diode, an adjustable capacitor and the like, and the switch commonly used for the radio frequency circuit comprises an MEMS switch, an MOS switch, a PIN switch and the like. The PIN switch presents the characteristic of approximate connection or disconnection under direct current forward-reverse bias, the power amplifier is matched at different working frequency points by changing the structure of the power amplifier matching network, and compared with other switches, the PIN switch has the characteristics of low cost, simple circuit and the like, so that the PIN switch is widely applied to the design of a reconfigurable circuit.
In a MHz frequency range, the traditional lumped parameter reconfigurable power amplifier can really achieve high efficiency, but in a GHz or higher frequency band, the traditional lumped parameter reconfigurable power amplifier is not easy to realize due to the limitation of lumped parameter elements; microstrip lines replace lumped parameter elements to enable the circuit to work in a higher frequency band, but later parameter adjustment is complex and later debugging is not flexible enough.
In the existing reconfigurable power amplifier, there are many parallel branches and low efficiency, which are not favorable for the work of the power amplifier, for example, referring to a reconfigurable power amplifier structure proposed in the references "xue, liu tai jun, leaf edge, kuo feng, li rui yang" reconfigurable multiband radio frequency power amplifier design [ J ] radio communication technology, 2014, 40(03):61-64 ", a PIN switch is used to control a capacitor in a matching circuit, and a reconfigurable power amplifier working at 1.75GHz, 2.1GHz and 2.6GHz is designed.
Disclosure of Invention
Based on the defects of the prior art, the reconfigurable dual-band power amplifier based on the PIN switch is simple in structure, small in size and stable in performance, and can work in two dual-bands of 1.6GHz &2.1GHz and 1.8GHz &2.3GHz, so that the requirements of various communication systems are met.
In order to solve the technical problems, the invention is realized by the following technical scheme:
on one hand, the invention provides a reconfigurable dual-band power amplifier based on a PIN switch, which comprises an input port, an input matching circuit, a stabilizing circuit, a transistor, a grid biasing circuit, a drain biasing circuit, the PIN switch, an output matching circuit and an output port;
the input port, the input matching circuit, the stabilizing circuit, the transistor, the grid biasing circuit, the drain biasing circuit, the PIN switch, the output matching circuit and the output port are sequentially connected in series;
the input matching circuit comprises a main microstrip line, a capacitor and an input port P1Connecting capacitor C1Input terminal, capacitor C1Output terminal and capacitor C2And ground and microstrip line TL1One end connected to TL1The other end is connected with the microstrip line TL2And ground and a capacitor C3Connected to ground, a capacitor C3The other end of the ground is connected with an output port P of the input matching circuit2；
The stabilizing circuit comprises an input port P3Capacitor C4Resistance R1Said input port P3And a capacitor C4And a resistance R1Parallel input connection, capacitor C4And a resistance R1The parallel output end is connected with the grid biasing circuit.
The gate bias circuit includes a port P5Capacitor C5、C6、C7、C8Microstrip line TL3、TL4Resistance R2Inductor L1Said port P5And a capacitor C5Connection, capacitance C5Is connected to ground and to a capacitor C6Connected in parallel with ground, capacitor C6Is connected to ground and to a capacitor C7Connected in parallel with ground, capacitor C7Is connected to ground and to a capacitor C8After being connected in parallel with ground at TL3One end connected, TL3The other end is connected with a resistor R1Is connected to R1The other end is connected with TL4Connection, TL4The other end and an inductor L1Connection, L1The other end is connected with the transistor;
the grid electrode of the power amplification tube CGH40010F is connected with a grid electrode bias circuit, the source electrode of the power amplification tube CGH40010F is connected with the ground, and the drain electrode of the power amplification tube CGH40010F is connected with a drain electrode bias circuit;
the drain bias circuit comprises a port P6Capacitor C9、C10、C11、C12Microstrip line TL5、TL6Said port P6And a capacitor C9Connection, capacitance C9And ground is connected with C10And ground, C11And ground, C12And ground connected in parallel with TL5Are connected at one end to TL5Another end of (1) and TL6Are connected at one end to TL6The other end of the power amplifier is connected with the power amplifier tube;
the output matching circuit adopts an n-shaped matching network and comprises an input port P7, an output port P8, a microstrip line, a PIN switch and a capacitor, wherein the input port P7 is connected with the microstrip line, the other end of the microstrip line is connected with the output port, the PIN switch is added to control the change of the matching circuit, and the other end of the microstrip line is connected with the output port P8.
Optionally, a PIN switch is added in the output matching circuit, and the on-off of the switch is controlled by controlling the on-state voltage of the PIN switch, so that the purpose of controlling the change of the output matching circuit is achieved.
Optionally, in the input matching circuit, a 1.5GHz-2.5GHz matching network is designed based on a third-order bandpass filter theory.
Optionally, in the bias circuit, a sector microstrip line is used to widen a frequency band range usable by the bias circuit.
On the other hand, the invention also provides a control method of the reconfigurable dual-band power amplifier based on the PIN switch, which is realized by the reconfigurable dual-band power amplifier based on the PIN switch, and comprises the following steps:
step 1: connecting the target signal with an input matching circuit input port P1;
step 2: transmitting the target signal into a stabilizing circuit;
and step 3: amplifying the signal through a transistor and a bias circuit;
and 4, step 4: the input and amplified signals are processed by the output matching circuit and then transmitted out through the output port, and the amplification function of the signals to be amplified is completed.
By adopting the diode with the model number of SMP-1345-079LF as the reconfigurable device, the reconfigurable power amplifier realizes the reconfigurable performance of the power amplifier in two dual-wave bands of 1.6GHz &2.1GHz and 1.8GHz &2.3 GHz; the broadband input matching network designed based on the band-pass filter theory can realize good matching in a frequency band of 1.5GHz-2.5 GHz; the fan-shaped microstrip line is added into the bias circuit, so that the bandwidth of the bias circuit is widened; the power supply has the advantages of miniaturization, simple structure, high switching speed, high output power and efficiency and higher practical value.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following detailed description is given in conjunction with the preferred embodiments, together with the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below.
FIG. 1 is a schematic structural diagram of a reconfigurable dual-band power amplifier based on PIN switches according to the present invention;
FIG. 2 is a schematic diagram of an input matching circuit of the present invention;
FIG. 3 is a schematic diagram of a gate bias circuit, a drain bias circuit and a stabilization circuit according to the present invention;
FIG. 4 is a schematic diagram of an output matching circuit of the present invention;
FIG. 5 is a flow chart of a control method of the reconfigurable dual band power amplifier based on the PIN switch according to the present invention;
FIG. 6 is a graph of the gain and power added efficiency PAE of the reconfigurable dual-band power amplifier based on PIN switch according to the input power conversion of the embodiment;
FIG. 7 is a simulation graph of an output matching circuit of a reconfigurable dual-band power amplifier based on PIN switches in an embodiment;
fig. 8 is a simulation graph of an input matching circuit of the reconfigurable dual-band power amplifier based on the PIN switch in the embodiment.
Detailed Description
Other aspects, features and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which form a part of this specification, and which illustrate, by way of example, the principles of the invention. In the referenced drawings, the same or similar components in different drawings are denoted by the same reference numerals.
In one aspect, the present invention provides a reconfigurable dual band power amplifier based on PIN switches, as shown in fig. 1, including an input port 1, an input matching circuit 2, a stabilization circuit 3, a transistor 4, a gate bias circuit 5, a drain bias circuit 6, a PIN switch 7, an output matching circuit 8, and an output port 9.
In this embodiment, the transistor is a power amplifier tube CGH 40010F.
The input matching circuit 2, the stabilizing circuit 3, the transistor 4, the grid biasing circuit 5, the drain biasing circuit 6, the PIN switch 7 and the output matching circuit 8 are sequentially connected in series.
The input matching circuit is shown in figure 2 and comprises a main microstrip line and a capacitor, and an input port P1Connecting capacitor C1Input terminal, capacitor C1Output terminal and capacitor C2And ground and microstrip line TL1One end connected to TL1The other end is connected with the microstrip line TL2And ground and a capacitor C3Connected to ground, a capacitor C3The other end of the ground is connected with an output port P of the input matching circuit2The effect obtained by setting Vhigh to 28V and Vlow to-2.8V is very good through simulation debugging, wherein C1 is a dc blocking capacitor to prevent a dc signal from entering a load.
The transistor 4, the gate bias circuit 5 and the drain bias circuit 6 are used for power amplification of signals, and as shown in fig. 3, the stabilizing circuit comprises an input port P3Capacitor C4Resistance R1Said input port P3And a capacitor C4And a resistance R1Parallel input connection, capacitor C4And a resistance R1The parallel output end is connected with the grid biasing circuit.
The gate of the power amplifier tube CGH40010F is connected to a gate bias circuit, the source of the power amplifier tube CGH40010F is connected to ground, and the drain of the power amplifier tube CGH40010F is connected to a drain bias circuit.
The drain bias circuit includes a port P6Capacitor C9、C10、C11、C12Microstrip line TL5、TL6Said port P6And a capacitor C9Connection, capacitance C9And ground is connected with C10And ground, C11And ground, C12And ground connected in parallel with TL5Are connected at one end to TL5Another end of (1) and TL6Are connected at one end to TL6The other end of the power amplifier is connected with the power amplifier tube.
As shown in fig. 4, the output matching circuit adopts a pi-type matching network, and includes an input port P7, an output port P8, a microstrip line, a PIN switch and a capacitor, the input port P7 is connected to the microstrip line, the other end of the microstrip line is connected to the output port, the PIN switch is added to control the change of the matching circuit, and the other end is connected to the output port P8.
On the other hand, the invention also provides a reconfigurable dual-band power amplifier control method based on the PIN switch, which is realized by the reconfigurable dual-band power amplifier based on the PIN switch as shown in figure 5; the method comprises the following steps:
step 1: connecting the target signal with an input matching circuit input port P1;
step 2: transmitting the target signal into a stabilizing circuit;
and step 3: amplifying the signal through a transistor and a bias circuit;
and 4, step 4: and transmitting the amplified signal to an output matching circuit for processing and then transmitting the processed signal through an output port to finish the amplification function of the signal to be amplified.
Fig. 6 is a graph showing the gain and power added efficiency of the reconfigurable dual-band power amplifier based on the PIN switch according to the embodiment as a function of input power, and the simulation result of fig. 6(a) shows that when the power amplifier works at 1.6GHz, the output power is 40.56dBm, the power amplifier efficiency is 50.28%, and the small signal gain is 17.84 dB; from the simulation result of the graph (b), the power amplifier output power is 41.36dBm, the PAE is 50.17%, and the small signal gain is 21.35dB at 2.1 GHz; from the results of the graph (c), it can be known that the output power of the power amplifier is 38.9dBm, the PAE is 54.73%, and the small signal gain is 17.62dB at 1.8 GHz; from the results of the graph (d), it can be known that the output power of the power amplifier is 41.14dBm, the PAE is 51.48%, and the small signal gain is 19.79db when the power amplifier is at 2.3GHz, which indicates that the reconfigurable power amplifier has good performance in four working frequency bands and meets the design requirements.
Fig. 7 is a simulation graph of an output matching circuit of the reconfigurable dual-band power amplifier based on the PIN switch in the embodiment, and it can be seen from fig. 7 that the return loss S11 of two frequency points is less than-25 dB in the 1.6GHz &2.1GHz band, the return loss S11 of two frequency points is less than-14 dB in the 1.8GHz &2.3GHz band, and the insertion loss S21 of two dual-bands is greater than-1 dB, which shows that the designed reconfigurable dual-band impedance transformation network has good frequency characteristics, and can output with high efficiency when the switch is opened and closed.
Fig. 8 is a simulation graph of an input matching circuit of the reconfigurable dual-band power amplifier based on the PIN switch in the embodiment, and it can be seen from fig. 8 that the return loss is smaller than-10 dB and the insertion loss is larger than-1 dB when the circuit works at 1.5-2.5GHz, which shows that the circuit is well matched and has better frequency characteristics in the frequency band range of 1.5GHz-2.5 GHz.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions and scope of the present invention as defined in the appended claims.
Claims (5)
1. A reconfigurable dual-band power amplifier based on PIN switch comprises an input port (1), an input matching circuit (2), a stabilizing circuit (3), a transistor (4), a gate bias circuit (5), a drain bias circuit (6), a PIN switch (7), an output matching circuit (8) and an output port (9), and is characterized in that:
the input port (1), the input matching circuit (2), the stabilizing circuit (3), the transistor (4), the grid biasing circuit (5), the drain biasing circuit (6), the PIN switch (7), the output matching circuit (8) and the output port (9) are sequentially connected in series;
the input matching circuit (2) comprises a main circuit microstrip line and a capacitor, and an input port P1Connecting capacitor C1Input terminal, capacitor C1Output terminal and capacitor C2And ground and microstrip line TL1One end connected to TL1The other end is connected with the microstrip line TL2And ground and a capacitor C3Connected to ground, a capacitor C3The other end of the ground is connected with an output port P of the input matching circuit2；
The stabilizing circuit (3) comprises an input port P3Capacitor C4Resistance R1Said input port P3And a capacitor C4And a resistance R1Parallel input connection, capacitor C4And a resistance R1The parallel output end is connected with the grid bias circuit;
the gate bias circuit includes a port P5Capacitor C5、C6、C7、C8Microstrip line TL3、TL4Resistance R2Inductor L1Said port P5And a capacitor C5Connection, capacitance C5Is connected to ground and to a capacitor C6Connected in parallel with ground, capacitor C6Is connected to ground and to a capacitor C7Connected in parallel with ground, capacitor C7Is connected to ground and to a capacitor C8After being connected in parallel with ground at TL3One end connected, TL3The other end is connected with a resistor R1Is connected to R1The other end is connected with TL4Connection, TL4The other end and an inductor L1Connection, L1The other end is connected with the transistor;
the grid electrode of the power amplification tube is connected with the grid electrode biasing circuit, the source electrode of the power amplification tube is connected with the ground, and the drain electrode of the power amplification tube is connected with the drain electrode biasing circuit;
the drain bias circuit comprises a port P6Capacitor C9、C10、C11、C12Microstrip line TL5、TL6Said port P6And a capacitor C9Connection, capacitance C9And ground is connected with C10And ground, C11And ground, C12And ground connected in parallel with TL5Are connected at one end to TL5Another end of (1) and TL6Are connected at one end to TL6The other end of the power amplifier is connected with the power amplifier tube;
the output matching circuit adopts an n-shaped matching network and comprises an input port P7, an output port P8, a microstrip line, a PIN switch and a capacitor, wherein the input port P7 is connected with the microstrip line, the other end of the microstrip line is connected with the output port, and the PIN switch is added to control the change of the matching circuit.
2. A reconfigurable dual band PIN switch-based power amplifier according to claim 1 wherein a PIN switch is incorporated into the output matching circuit to control the on and off of the switch by controlling the on voltage of the PIN switch to thereby control the variation of the output matching circuit.
3. A reconfigurable dual band PIN switch-based power amplifier according to claim 1 wherein in the input matching circuit, a 1.5GHz-2.5GHz matching network is designed based on third order bandpass filter theory.
4. A PIN switch based reconfigurable dual band power amplifier according to claim 1, wherein the use of a sector microstrip line in the bias circuit widens the range of frequency bands available for use by the bias circuit.
5. A method of controlling a reconfigurable dual band PIN switch based power amplifier according to any of claims 1 to 4 comprising the steps of:
step 1: connecting the target signal with an input matching circuit input port P1;
step 2: transmitting the target signal into a stabilizing circuit;
and step 3: amplifying the signal through a transistor and a bias circuit;
and 4, step 4: the input and amplified signals are processed by the output matching circuit and then transmitted out through the output port, and the amplification function of the signals to be amplified is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011643367.7A CN112865735A (en) | 2020-12-31 | 2020-12-31 | Reconfigurable dual-band power amplifier based on PIN switch and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011643367.7A CN112865735A (en) | 2020-12-31 | 2020-12-31 | Reconfigurable dual-band power amplifier based on PIN switch and control method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112865735A true CN112865735A (en) | 2021-05-28 |
Family
ID=76000873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011643367.7A Pending CN112865735A (en) | 2020-12-31 | 2020-12-31 | Reconfigurable dual-band power amplifier based on PIN switch and control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112865735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240225A (en) * | 2023-09-25 | 2023-12-15 | 南京邮电大学 | 100W-level ultra-wideband reconfigurable power amplifier based on PIN diode switch |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018006483A1 (en) * | 2016-07-05 | 2018-01-11 | 成都泰格微波技术股份有限公司 | 2.7-3.5 ghz 2w gan monolithic power amplifier and design method thereof |
| CN108449097A (en) * | 2018-04-26 | 2018-08-24 | 辽宁工程技术大学 | A kind of restructural power amplifier and its control method based on distributed PIN switches |
| CN108988806A (en) * | 2018-10-29 | 2018-12-11 | 辽宁工程技术大学 | A kind of restructural radio-frequency power amplifier in broadband |
| CN111555719A (en) * | 2020-05-26 | 2020-08-18 | 辽宁工程技术大学 | Dual-band radio frequency power amplifier and control method thereof |
-
2020
- 2020-12-31 CN CN202011643367.7A patent/CN112865735A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018006483A1 (en) * | 2016-07-05 | 2018-01-11 | 成都泰格微波技术股份有限公司 | 2.7-3.5 ghz 2w gan monolithic power amplifier and design method thereof |
| CN108449097A (en) * | 2018-04-26 | 2018-08-24 | 辽宁工程技术大学 | A kind of restructural power amplifier and its control method based on distributed PIN switches |
| CN108988806A (en) * | 2018-10-29 | 2018-12-11 | 辽宁工程技术大学 | A kind of restructural radio-frequency power amplifier in broadband |
| CN111555719A (en) * | 2020-05-26 | 2020-08-18 | 辽宁工程技术大学 | Dual-band radio frequency power amplifier and control method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李国金等: ""并发双波段可重构功率放大器仿真设计"", 《微电子学》, vol. 49, no. 1, pages 49 - 53 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240225A (en) * | 2023-09-25 | 2023-12-15 | 南京邮电大学 | 100W-level ultra-wideband reconfigurable power amplifier based on PIN diode switch |
| CN117240225B (en) * | 2023-09-25 | 2024-05-28 | 南京邮电大学 | 100W-level ultra-wideband reconfigurable power amplifier based on PIN diode switch |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111293999B (en) | Broadband reconfigurable power amplifier and radar system | |
| CN103427781A (en) | Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator | |
| CN110324014B (en) | Ultra-wideband high-efficiency power amplifier based on harmonic control network | |
| CN106982031B (en) | Filtering F-type power amplifier based on dielectric resonator | |
| CN114024512B (en) | Ultra-wideband low noise amplifier of frequency division duplex | |
| CN111555719A (en) | Dual-band radio frequency power amplifier and control method thereof | |
| CN113381713A (en) | Dual-band low-noise amplifier based on reconfigurable inductor | |
| CN113271070A (en) | Reconfigurable power amplifier based on PIN switch and design method thereof | |
| CN113644883A (en) | Broadband frequency reconfigurable power amplifier | |
| CN113285697A (en) | Matching reconfigurable ultra-wideband single-pole multi-throw radio frequency switch | |
| CN114844470A (en) | Low-noise amplifier and chip | |
| CN109194291A (en) | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality | |
| CN114172470B (en) | Power amplifier interstage matching network and broadband low insertion loss optimization method | |
| CN112865735A (en) | Reconfigurable dual-band power amplifier based on PIN switch and control method thereof | |
| CN210327526U (en) | High-speed switch suitable for millimeter wave frequency band | |
| CN113098403A (en) | Ultra-wideband low-current drive amplifier based on GaAs pHEMT process | |
| CN209607892U (en) | A kind of broadband filter with trap characteristic of minor matters loading structure | |
| CN102496755B (en) | Miniaturized double-stopband microstrip filter | |
| CN116865691A (en) | Ultra-wideband low noise amplifier with bandwidth reconfigurable technology | |
| CN115987256A (en) | Ultra-wideband high-power single-pole double-throw switch circuit with adjustable isolation | |
| CN215452892U (en) | Broadband efficient GaN internal matching power tube | |
| CN108494375A (en) | A kind of distributed power amplifier of integrated reconfigurable notch filter | |
| CN112468105A (en) | Dual-band LNA matching circuit | |
| CN219659679U (en) | Low-noise amplifier, input matching circuit thereof, radio frequency module and radio frequency chip | |
| Peng et al. | High-efficiency dual-band power amplifier based on high-selectivity suspended substrate stripline dual-band filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |