CN219659679U - Low-noise amplifier, input matching circuit thereof, radio frequency module and radio frequency chip - Google Patents
Low-noise amplifier, input matching circuit thereof, radio frequency module and radio frequency chip Download PDFInfo
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- CN219659679U CN219659679U CN202321211955.2U CN202321211955U CN219659679U CN 219659679 U CN219659679 U CN 219659679U CN 202321211955 U CN202321211955 U CN 202321211955U CN 219659679 U CN219659679 U CN 219659679U
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Abstract
The embodiment of the utility model discloses an input matching circuit of a low-noise amplifier, the low-noise amplifier, a radio frequency module and a radio frequency chip, wherein the input matching circuit comprises: an input amplifying tube; a matching inductance electrically connected with the grid electrode of the input amplifying tube; a source inductor electrically connected to the source of the input amplifier; one end of the regulating branch is electrically connected with the source electrode of the input amplifying tube, the other end of the regulating branch is electrically connected with the grid electrode of the input amplifying tube, and the regulating branch comprises a control switch and a capacitor which are connected in series. The input matching circuit can reduce the chip area occupied by the low noise amplifier on the basis of ensuring the characteristics of the low noise amplifier with adjustable multi-gain stages, and meets the development requirements of miniaturization and high integration of the radio frequency chip design.
Description
Technical Field
The utility model relates to the technical field of radio frequency, in particular to an adjustable multi-gain-stage characteristic of a low-noise amplifier in a radio frequency chip and an area of the low-noise amplifier.
Background
Radio Frequency (RF), also known as Radio Frequency, high Frequency, etc., specifically refers to frequencies in the range of 300kHz-300GHz, and the technology is relevant to the current wireless communication technology, and has wide and irreplaceable roles in the wireless communication field. The rf chip is an important branch of the application of rf technology in the semiconductor field, which is related to the manufacture of rf integrated circuits by using semiconductor processes.
With the development of communication technology, the integration level of the radio frequency chip is higher and the area is smaller, so that higher requirements are also put forward on the area of a single radio frequency device. Specifically, typical rf devices on an rf chip include filters (filters), duplex/multiplexers (duplex/Multiplexer), power Amplifiers (PA), low noise amplifiers (LNA, low Noise Amplifier), rf switches (switches), monolithic microwave integrated chips (MICC, microwave Integrated Circuit Chip), and rf modules (models) with integrated functions. Among them, the low noise amplifier (i.e., LNA) is an important device in the radio frequency chip, but in specific applications, the area occupied by the low noise amplifier in the radio frequency chip is large, and it is difficult to meet the development requirements of miniaturization and high integration of the radio frequency chip design.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the utility model provides an input matching circuit of a low-noise amplifier and the low-noise amplifier comprising the input matching circuit, so that the chip area occupied by the low-noise amplifier is reduced on the basis of ensuring that the low-noise amplifier has the characteristics of adjustable multiple gain stages, and the development requirements of miniaturization and high integration of the radio frequency chip design are met.
In order to solve the problems, the embodiment of the utility model provides the following technical scheme:
in a first aspect, the present utility model provides an input matching circuit of a low noise amplifier comprising:
an input amplifying tube;
a matching inductance electrically connected with the grid electrode of the input amplifying tube;
a source inductor electrically connected to the source of the input amplifier;
one end of the regulating branch is electrically connected with the source electrode of the input amplifying tube, the other end of the regulating branch is electrically connected with the grid electrode of the input amplifying tube, and the regulating branch comprises a control switch and a capacitor which are connected in series.
The input matching circuit of the low-noise amplifier provided by the embodiment of the utility model comprises an input amplifying tube, a matching inductance and a source electrode inductance, and also comprises an adjusting branch, wherein one end of the adjusting branch is electrically connected with the grid electrode of the input amplifying tube, the other end of the adjusting branch is electrically connected with the source electrode of the input amplifying tube, and when the input matching circuit of the low-noise amplifier is in a working state, the adjusting branch can adjust the gain of the low-noise amplifier by controlling the working state of the control switch, so that the low-noise amplifier has the characteristic of adjustable multi-gain stages.
In addition, the input matching circuit of the low-noise amplifier provided by the embodiment of the utility model enables the low-noise amplifier to have the characteristic of adjustable multi-gain stages through the control switch and the capacitor which are connected in series, and a plurality of source inductors and a plurality of switches are not needed to be used, so that the area of the low-noise amplifier is small, the area required to be occupied on the radio frequency chip is small when the low-noise amplifier is applied to the radio frequency chip, and the design freedom is high.
In some implementations, the control switch is configured to be closed in a first state to make the regulation branch in an on state, and open in a second state to make the regulation branch in an off state, such as when the low noise amplifier is operated in a certain intermediate gain stage, and the control switch is closed under the condition that the inductive matching is unchanged, and a capacitor is connected in the input matching circuit to enhance the capacitive input matching of the input matching circuit; when the low noise amplifier works in the highest gain stage, the control switch is turned off, and the capacitor is turned off in the input matching circuit, so that the gain performance is maximized, and the low noise amplifier has the characteristic of adjustable multiple gain stages.
In some implementations, the control switch is an active radio frequency switch to enable automatic switching of the first and second states of the regulation branch. Optionally, the control switch includes at least one of an electromechanical switch, a photodiode, and a field effect transistor.
In some implementations, the capacitance has a value in the range of 10fF to 100fF.
In a second aspect, the present utility model further provides a low noise amplifier, including an input matching circuit of the low noise amplifier, so that the low noise amplifier has the characteristics of adjustable multiple gain stages, and has a smaller occupied area and a higher design freedom when applied to a radio frequency chip.
In a third aspect, the present utility model further provides a radio frequency module including the low noise amplifier and a radio frequency chip including the radio frequency module.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a partial diagram of an input matching circuit of a conventional low noise amplifier with adjustable multi-gain stage characteristics;
FIG. 2 is a schematic diagram of a portion of an input matching circuit of a Source Inductive degenerated low noise amplifier;
FIG. 3 is a schematic diagram of a small signal equivalent circuit of a low noise amplifier input amplifier tube;
FIG. 4 is a schematic diagram of an input matching circuit of a low noise amplifier according to an embodiment of the present utility model;
FIG. 5 is a graph of the equal impedance Smith circle of a low noise amplifier with a source degeneration inductance at an operating frequency of 3.7Ghz, wherein curve A is a schematic diagram of the input impedance of the low noise amplifier with the structure shown in FIG. 1, and curve C is a schematic diagram of the input impedance of the low noise amplifier according to the embodiment of the utility model;
fig. 6 is a schematic diagram of an input return loss of a low noise amplifier, where a curve E is a schematic diagram of an input return loss of the low noise amplifier with the structure shown in fig. 1, and a curve F is a schematic diagram of an input return loss of the low noise amplifier according to an embodiment of the present utility model;
fig. 7 is a schematic diagram of an input matching circuit of a low noise amplifier according to another embodiment of the present utility model.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model, but the present utility model may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present utility model is not limited to the specific embodiments disclosed below.
In the following detailed description of the embodiments of the present utility model, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration only, and in which is shown by way of illustration only, and in which the scope of the utility model is not limited for ease of illustration. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
With the development of communication technology, the transmission speed of communication signals is faster, the transmission signals are more stable, and the requirements on radio frequency devices are higher. Taking fifth generation (5G) mobile communication as an example, the frequency bands used for 5G mobile communication include FR1 (450 MHz-6GHz, so-called Sub-6 GHz) and FR2 (24.25 GHz-52.6GHz, so-called millimeter wave band), and some typical examples of the subdivided frequency bands are n77 (3300-4200 MHz), n78 (3300-3800 MHz) and n79 (4400-5000 MHz), which are mainly applied in the field of high frequency transmission. The 5G mobile communication network has the advantages of high transmission speed, stable transmission signals, rapid increase of the number of radio frequency components of a single product, and longer debugging time because the occupied area of a scheme formed by discrete components exceeds the accepted limit of the scheme, so that the radio frequency module has higher integration level and high performance, smaller occupied area and shorter debugging time becomes the development trend of the mobile communication market.
Specifically, the radio frequency module is classified into FEMiD (integrated switch, filter and duplexer), PAMiD (integrated multimode multiband PA and FEMiD), LPAMiD (PAMiD plus low noise amplifier), diFEM (radio frequency switch and filter), LFEM (radio frequency switch, low noise amplifier and filter), and the like. The low noise amplifier (Low Noise Amplifier ) is an important device in the radio frequency module, belongs to an active module, is critical to the performance of a receiver system, and is used for acquiring extremely weak uncertain signals from an antenna, amplifying the signals and then outputting the amplified signals, and meanwhile, identifying noise, wherein main parameters of the low noise amplifier include noise coefficient, gain, input/output matching, linearity, reverse isolation and the like. Therefore, the design and manufacturing level of the low noise amplifier is the basis for the development of the radio frequency module. .
Continuing with the fifth generation (5G) mobile communication as an example, in the current 5G communication scheme, the transceiver needs to work on multiple frequency bands, and because of different transmission paths and mediums, the strength of the finally received signal has a large change, so that the design of the low noise amplifier needs to have the characteristic of adjustable multiple gain stages to adjust the gain according to the strength of the signal, so as to ensure stable output of the signal.
As shown in fig. 1, the low noise amplifier design may be configured with two source inductances Ls1 and Ls2, and implement a switchable function through switches SW1 and SW2 to implement a function of adjustable multiple gain stages, but this design makes the low noise amplifier occupy a larger radio frequency chip area, and in the background that the current radio frequency chip design is more and more miniaturized to meet the requirement of the 5G product, this design brings higher cost, lower design freedom and lower space utilization, and is difficult to meet the design index of the 5G product for space utilization.
Therefore, how to reduce the chip area required to occupy the low noise amplifier on the basis of ensuring that the low noise amplifier has the characteristics of adjustable multiple gain stages has become a research hotspot for those skilled in the art.
In view of the above, the embodiments of the present utility model provide an input matching circuit of a low noise amplifier and a low noise amplifier including the input matching circuit, so as to reduce the chip area occupied by the low noise amplifier on the basis of ensuring that the low noise amplifier has the characteristics of adjustable multiple gain stages.
As shown in fig. 2 and 3, fig. 2 is a schematic diagram of a part of an input matching circuit of Source Inductive degenerated LNA (source-sense-degraded low-noise amplifier), including a matching inductance Lg, a low-noise amplifier input amplifying tube M and a source inductance Ls; FIG. 3 is a schematic diagram of a small-signal equivalent circuit of a low-noise amplifier input amplifier, wherein Cgd is an equivalent capacitance between a gate and a drain in the low-noise amplifier input amplifier, cgs is an equivalent capacitance between a gate and a source in the low-noise amplifier input amplifier, gmVgs is an equivalent current of the low-noise amplifier input amplifier, and r0 is an equivalent resistance of the low-noise amplifier input amplifier; RL is the load resistance; ls is the source inductance of the low noise amplifier input amplifier.
In the configuration shown in fig. 3, if Cgd and r0 of the low noise amplifier input amplifier tube are ignored, the input impedance of the load can be approximated as: zin=1/jw cgs+jw ls+ls gm/Cgs, i.e., the input impedance of the low noise amplifier in the input matching circuit shown in fig. 2 can be approximated as: zin=1/jw cgs+jw ls+ls gm/Cgs. Ideally, when the low noise amplifier needs to achieve maximum gain input matching, i.e., zin=50 ohms, the imaginary impedance 1/jw cgs+jw Ls in the input impedance of the low noise amplifier needs to be approximately zero, i.e., the capacitance Cgs and inductance Ls resonate out at the operating frequency, and the real impedance Ls gm/Cgs is approximately 50ohms. In practical circuit design, due to unavoidable parasitic effects between layouts and additional ground capacitance and input inductance brought before the input node of the low noise amplifier, the actual input impedance is often difficult to achieve the equivalent of the imaginary part to zero, but the design direction is still needed, so that the signal is transmitted at the input port of the low noise amplifier with optimized power.
As shown in fig. 4, an input matching circuit of a low noise amplifier according to an embodiment of the present utility model includes:
an input amplifying tube M1;
a matching inductance Lg electrically connected to the gate of the input amplifying tube M1;
a source inductance Ls electrically connected to the source of the input amplifier M1;
one end of the regulating branch is electrically connected with the source electrode of the input amplifying tube M1, and the other end of the regulating branch is electrically connected with the grid electrode of the input amplifying tube M1, and the regulating branch comprises a control switch S and a capacitor C which are connected in series.
The input matching circuit of the low-noise amplifier provided by the embodiment of the utility model comprises an input amplifying tube, a matching inductance and a source electrode inductance, and also comprises an adjusting branch, wherein one end of the adjusting branch is electrically connected with the grid electrode of the input amplifying tube, the other end of the adjusting branch is electrically connected with the source electrode of the input amplifying tube, and when the input matching circuit of the low-noise amplifier is in a working state, the adjusting branch can adjust the gain of the low-noise amplifier by controlling the working state of the control switch, so that the low-noise amplifier has the characteristic of adjustable multi-gain stages.
In addition, the input matching circuit of the low-noise amplifier provided by the embodiment of the utility model ensures that the low-noise amplifier has the characteristic of adjustable multiple gain stages through the control switch and the capacitor which are connected in series, and a plurality of source inductors and a plurality of switches are not needed to be used, so that the area of the low-noise amplifier is smaller, and the low-noise amplifier has higher design freedom and occupies smaller area on a radio frequency chip when the low-noise amplifier is applied to the radio frequency chip.
Specifically, in one embodiment of the present utility model, the control switch is configured to be closed in a first state to make the regulation branch in an on state and open in a second state to make the regulation branch in an off state to regulate the gain of the low noise amplifier. If the low noise amplifier works in a certain middle gain stage, under the condition of unchanged inductive matching, the control switch is closed so as to enable the regulating branch to be in a conducting state, thereby connecting a capacitor in the input matching circuit and enhancing the capacitive input matching of the input matching circuit; when the low-noise amplifier works in the highest gain gear, the control switch is disconnected, so that the regulating branch is in a disconnected state, and the capacitor is disconnected in the input matching circuit, so that the gain performance is maximized, and the gain of the input matching circuit is adjustable.
Specifically, on the basis of the above embodiment, in one embodiment of the present utility model, the control switch is an active radio frequency switch, so that the control switch is automatically switched between on and off.
Optionally, the control switch includes at least one of an electromechanical switch, a photodiode, and a field effect transistor. Specifically, the control switch may be an electromechanical switch, a PIN diode (i.e., photodiode), an FET (Field Effect Transistor ), or a hybrid switch, which is not limited in this regard, and the present utility model is specifically limited as appropriate.
The input matching circuit of the low noise amplifier and the low noise amplifier including the same according to the embodiments of the present utility model are described below with reference to a specific embodiment.
It should be noted that, according to the requirement of the working mode and input matching of the low noise amplifier, equivalent inductive matching is added to the input network, so that the impedance point on the Smith chart can move clockwise along the equal resistance circle, and the distance between the input impedance value and the 50ohms origin can be shortened by optimizing the imaginary part, so as to achieve the purpose of optimizing the input matching.
As shown in fig. 5, fig. 5 is a graph of the equal impedance Smith circle of the low noise amplifier with the source negative feedback inductance having an operating frequency of 3.7Ghz, wherein curve a is a schematic diagram of the input impedance of the low noise amplifier with the input matching circuit adopting the structure shown in fig. 1, and curve C is a schematic diagram of the input impedance of the low noise amplifier provided by the embodiment of the utility model.
As shown in fig. 5, when the low noise amplifier works in a certain middle gain stage, the input matching circuit adopts the input impedance curve a of the low noise amplifier with the structure shown in fig. 1, the impedance point corresponding to 3.7Ghz is marked by a black dot B in the graph, and the corresponding normalized impedance value is about 0.36-j1.04; in the input impedance curve C of the low noise amplifier provided by the embodiment of the present utility model, the impedance point corresponding to 3.7Ghz is marked by a black dot D in the graph, and the corresponding normalized impedance value is about 0.2+j0.01. And the normalized impedance value corresponding to the standard 50ohms matching origin is 1+j0, which is located at the center point of the Smith chart.
As can be seen from fig. 5, the impedance point D in the input impedance curve C is shifted a distance in a clockwise direction on the Smith chart compared to the impedance point B in the input impedance curve a. Moreover, the method is also applicable to the field of the present utility model. By comparing the impedance values of the impedance point B and the impedance point D, it can be seen that when the low noise amplifier provided by the embodiment of the utility model works at 3.7Ghz, the real part value of the input impedance is slightly offset, but the imaginary part impedance value is more close to the 50ohms origin, so that the distance between the vector value of the overall input impedance matching of the low noise amplifier and the 50ohms origin is effectively shortened, and the return loss of the overall input matching of the low noise amplifier at 3.7Ghz is optimized.
As shown in fig. 6, fig. 6 is an input return loss schematic diagram of a low noise amplifier, where a curve E is an input return loss schematic diagram of the low noise amplifier with the structure shown in fig. 1, and a curve F is an input return loss schematic diagram of the low noise amplifier provided by the embodiment of the present utility model; wherein the abscissa is the operating frequency of the low noise amplifier and the ordinate is the return loss of the low noise amplifier. As can be seen from the figure, when the operating frequency is 3.75Ghz, compared with the low noise amplifier with the structure shown in FIG. 1, the input return loss of the low noise amplifier provided by the embodiment of the utility model is optimized from-2.9 dB to-4.6 dB, and the input return loss is improved by 1.7dB.
As can be seen from the above, when the low noise amplifier provided by the embodiment of the utility model is applied to a radio frequency chip, the occupied area can be reduced, the distance between the input impedance value and the origin of 50ohms can be shortened, and the return loss can be optimized.
It should be noted that, when the low noise amplifier input matching circuit provided by the embodiment of the present utility model is applied, when the capacitance in the adjusting branch circuit adopts different capacitance values, the impedance matching performance of the low noise amplifier input matching circuit is different. Therefore, in specific application, the impedance point can be moved clockwise along the equal-resistance circle by adjusting the capacitance value of the capacitor in the regulating branch, so that a better impedance point is determined, and the low-noise amplifier has better input matching performance.
Optionally, in an embodiment of the present utility model, the capacitance value of the capacitor C in the adjustment branch needs to be determined by an auxiliary smith chart tool. For example, when manufacturing a multi-gain mode low noise amplifier, it is found that the S11 frequency point required by the low noise amplifier is at the B position when a certain intermediate gear is present, as shown in fig. 5, the S11 frequency point is far from the center point of the circle chart, and the S11 frequency point is always poor; after the adjusting branch is added, the point B can rotate clockwise on the Z impedance circle and also can deviate outwards. However, in the path of rotation, there must be a point closer to the origin than the distance of point B, i.e., there must be a rotation to a better matching position. With such intuitive judgment, the approximate D point position is found out at the turning point on the smith chart tool, and the required C1 specific value can be obtained by back-pushing.
Specifically, in one embodiment of the present utility model, the value of the capacitor ranges from 10fF to 100fF, for example, when the operating frequency of the low noise amplifier is within 5Ghz, the value of the capacitor C ranges from tens of f to one hundred fF, but the present utility model is not limited thereto, and the present utility model is specifically limited thereto as the case may be.
On the basis of any one of the above embodiments, in one embodiment of the present utility model, as shown in fig. 7, the input matching circuit further includes:
the gate end of the switching tube M2 is electrically connected with the first voltage signal VDD, the drain end of the switching tube M2 is electrically connected with the first voltage signal VDD through the first inductor L1, and the source end of the switching tube M2 is electrically connected with the drain end of the input amplifying tube M1;
and one end of the first resistor Rs is electrically connected with one end of the matching inductor Ls far away from the grid electrode of the input amplifying tube, and the other end of the first resistor Rs is electrically connected with a signal source.
In addition, the embodiment of the utility model also provides a radio frequency module comprising the low noise amplifier provided by any embodiment and a radio frequency chip comprising the radio frequency module.
In summary, the input matching circuit, the low noise amplifier, the radio frequency module and the radio frequency chip of the low noise amplifier provided by the embodiment of the utility model comprise an input amplifying tube, a matching inductance and a source inductance, and further comprise an adjusting branch, wherein one end of the adjusting branch is electrically connected with the grid electrode of the input amplifying tube, the other end of the adjusting branch is electrically connected with the source electrode of the input amplifying tube, when the input matching circuit of the low noise amplifier is in an operating state, the adjusting branch can adjust the gain of the low noise amplifier by controlling the operating state of the control switch, for example, when the low noise amplifier is in a certain middle gain gear, under the condition of unchanged inductive matching, the control switch is closed, and the capacitance is connected in the input matching circuit to enhance the capacitive input matching of the input matching circuit; when the low noise amplifier works in the highest gain stage, the control switch is turned off, and the capacitor is turned off in the input matching circuit, so that the gain performance is maximized, and the low noise amplifier has the characteristic of adjustable multiple gain stages.
In addition, the input matching circuit, the low-noise amplifier, the radio frequency module and the radio frequency chip of the low-noise amplifier provided by the embodiment of the utility model have the characteristic of adjustable multi-gain stages by serially connecting the control switch and the capacitor, and a plurality of source inductors and a plurality of switches are not needed, so that the area is small, the area occupied by the low-noise amplifier on the radio frequency chip is small when the low-noise amplifier is applied to the radio frequency chip, and the design freedom degree is high.
It can be appreciated that the foregoing 5G scenario is merely an example of a mobile communication scenario, and from the perspective of wireless communication, the mobile communication scenario to which the scheme of the embodiment of the present utility model is applied includes, but is not limited to: 2G, 3G, 4G (LTE) and 5G scene communication systems, including 4G and 5G hybrid architectures, and 5G new wireless (5G New Radio,5G NR) systems, as well as new communication systems that emerge in future communication developments, and the like.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present utility model. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present utility model is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. An input matching circuit for a low noise amplifier, comprising:
an input amplifying tube;
a matching inductance electrically connected with the grid electrode of the input amplifying tube;
a source inductor electrically connected to the source of the input amplifier;
one end of the regulating branch is electrically connected with the source electrode of the input amplifying tube, the other end of the regulating branch is electrically connected with the grid electrode of the input amplifying tube, and the regulating branch comprises a control switch and a capacitor which are connected in series.
2. The input matching circuit of claim 1, wherein the control switch is configured to be closed in a first state to place the regulating branch in an on state and open in a second state to place the regulating branch in an off state.
3. The input matching circuit of claim 1, wherein said control switch is an active radio frequency switch.
4. The input matching circuit of claim 3, wherein said control switch comprises at least one of an electromechanical switch, a photodiode, and a field effect transistor.
5. The input matching circuit of claim 1, wherein the capacitance has a value in the range of 10 to 100fF.
6. A low noise amplifier comprising the input matching circuit of any of claims 1-5.
7. A radio frequency module comprising the low noise amplifier of claim 6.
8. A radio frequency chip comprising the radio frequency module of claim 7.
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| CN202321211955.2U CN219659679U (en) | 2023-05-16 | 2023-05-16 | Low-noise amplifier, input matching circuit thereof, radio frequency module and radio frequency chip |
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| CN202321211955.2U CN219659679U (en) | 2023-05-16 | 2023-05-16 | Low-noise amplifier, input matching circuit thereof, radio frequency module and radio frequency chip |
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| CN219659679U true CN219659679U (en) | 2023-09-08 |
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