CN112838139B - 光学子组件 - Google Patents
光学子组件 Download PDFInfo
- Publication number
- CN112838139B CN112838139B CN202011172760.2A CN202011172760A CN112838139B CN 112838139 B CN112838139 B CN 112838139B CN 202011172760 A CN202011172760 A CN 202011172760A CN 112838139 B CN112838139 B CN 112838139B
- Authority
- CN
- China
- Prior art keywords
- optical
- conductor pattern
- pattern
- optical subassembly
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 183
- 239000004020 conductor Substances 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 230000005484 gravity Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000003780 insertion Methods 0.000 description 18
- 230000037431 insertion Effects 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 7
- 230000005672 electromagnetic field Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000011449 Rosa Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-199887 | 2019-11-01 | ||
| JP2019199887 | 2019-11-01 | ||
| JP2020-127761 | 2020-07-28 | ||
| JP2020127761A JP7419188B2 (ja) | 2019-11-01 | 2020-07-28 | 光サブアッセンブリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112838139A CN112838139A (zh) | 2021-05-25 |
| CN112838139B true CN112838139B (zh) | 2023-11-17 |
Family
ID=75898217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011172760.2A Active CN112838139B (zh) | 2019-11-01 | 2020-10-28 | 光学子组件 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7419188B2 (ja) |
| CN (1) | CN112838139B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7382872B2 (ja) | 2020-03-24 | 2023-11-17 | 新光電気工業株式会社 | 半導体パッケージ用ステム、半導体パッケージ |
| JP7382871B2 (ja) | 2020-03-24 | 2023-11-17 | 新光電気工業株式会社 | 半導体パッケージ用ステム、半導体パッケージ |
| JP2022171288A (ja) | 2021-04-30 | 2022-11-11 | グローリー株式会社 | 紙葉類処理方法及び紙葉類処理装置 |
| CN113764971B (zh) * | 2021-06-30 | 2022-11-18 | 武汉敏芯半导体股份有限公司 | 电吸收调制激光器制冷封装结构 |
| WO2023233589A1 (ja) * | 2022-06-01 | 2023-12-07 | 三菱電機株式会社 | 半導体レーザ光源装置 |
| WO2024018501A1 (ja) * | 2022-07-19 | 2024-01-25 | 三菱電機株式会社 | 半導体レーザ光源装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11261104A (ja) * | 1998-03-12 | 1999-09-24 | Sharp Corp | 光結合装置 |
| CN1421720A (zh) * | 2001-11-30 | 2003-06-04 | 夏普公司 | 光学发送接收器模块以及使用该模块的电子器件 |
| JP2004103870A (ja) * | 2002-09-10 | 2004-04-02 | Sumitomo Electric Ind Ltd | 光モジュール |
| CN101438190A (zh) * | 2006-04-27 | 2009-05-20 | 菲尼萨公司 | 低电感的光学发送器次底座组件 |
| JP2011108938A (ja) * | 2009-11-19 | 2011-06-02 | Nippon Telegr & Teleph Corp <Ntt> | Ｔｏ−ｃａｎ型ｔｏｓａモジュール |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7061949B1 (en) | 2002-08-16 | 2006-06-13 | Jds Uniphase Corporation | Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth |
| JP5003110B2 (ja) * | 2006-11-15 | 2012-08-15 | 住友電気工業株式会社 | 光電変換モジュール |
| JP2010135688A (ja) | 2008-12-08 | 2010-06-17 | Sumitomo Electric Ind Ltd | 光モジュール製造方法 |
| JP7063695B2 (ja) | 2018-04-10 | 2022-05-09 | 日本ルメンタム株式会社 | 光モジュール |
-
2020
- 2020-07-28 JP JP2020127761A patent/JP7419188B2/ja active Active
- 2020-10-28 CN CN202011172760.2A patent/CN112838139B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11261104A (ja) * | 1998-03-12 | 1999-09-24 | Sharp Corp | 光結合装置 |
| CN1421720A (zh) * | 2001-11-30 | 2003-06-04 | 夏普公司 | 光学发送接收器模块以及使用该模块的电子器件 |
| JP2004103870A (ja) * | 2002-09-10 | 2004-04-02 | Sumitomo Electric Ind Ltd | 光モジュール |
| CN101438190A (zh) * | 2006-04-27 | 2009-05-20 | 菲尼萨公司 | 低电感的光学发送器次底座组件 |
| JP2011108938A (ja) * | 2009-11-19 | 2011-06-02 | Nippon Telegr & Teleph Corp <Ntt> | Ｔｏ−ｃａｎ型ｔｏｓａモジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7419188B2 (ja) | 2024-01-22 |
| JP2021077858A (ja) | 2021-05-20 |
| CN112838139A (zh) | 2021-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |