CN112821199A - Semiconductor laser with stepped waveguide thickness - Google Patents

Semiconductor laser with stepped waveguide thickness Download PDF

Info

Publication number
CN112821199A
CN112821199A CN202110157864.4A CN202110157864A CN112821199A CN 112821199 A CN112821199 A CN 112821199A CN 202110157864 A CN202110157864 A CN 202110157864A CN 112821199 A CN112821199 A CN 112821199A
Authority
CN
China
Prior art keywords
layer
thickness
waveguide
semiconductor laser
stepped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110157864.4A
Other languages
Chinese (zh)
Inventor
何林安
周坤
杜维川
李弋
高松信
唐淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Applied Electronics of CAEP
Original Assignee
Institute of Applied Electronics of CAEP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Applied Electronics of CAEP filed Critical Institute of Applied Electronics of CAEP
Priority to CN202110157864.4A priority Critical patent/CN112821199A/en
Publication of CN112821199A publication Critical patent/CN112821199A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a semiconductor laser with stepped waveguide thickness, which belongs to the technical field of semiconductor photoelectrons, and comprises a substrate layer, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer from bottom to top respectively, wherein the upper waveguide layer adopts selective area corrosion and secondary epitaxy processes to form upper waveguide thicknesses with different corrosion interface two sides, and adopts secondary epitaxy waveguide thickness, thereby being beneficial to integrating a laser on a preparation sheet, leading a corrosion area to be a small optical cavity epitaxy structure and a non-corrosion area to be a large optical cavity epitaxy structure, being capable of achieving the small optical cavity epitaxy structure to contain less modes and effectively inhibiting high-order mode lasing; the fundamental mode limiting factor of the small optical cavity is high, and the threshold current density of the region is effectively reduced; the large optical cavity is a laser emitting cavity surface, so that the laser power density of the cavity surface is reduced, and the saturation output power is improved.

Description

Semiconductor laser with stepped waveguide thickness
Technical Field
The invention belongs to the technical field of semiconductor photoelectron, and particularly relates to a semiconductor laser with a stepped waveguide thickness.
Background
The high-power semiconductor laser has the advantages of small volume, high electro-optic conversion efficiency, easy integration and the like, and has wide application in civil and military fields such as medical treatment, machining, communication, guidance, solid lasers, fiber laser pumping and the like. However, beam quality control of semiconductor lasers has always been a technical difficulty for their direct application. In recent years, due to the structural research of a power amplifier (MOPA) of a master oscillator, high power output of a semiconductor laser close to a diffraction limit is effectively realized. The on-chip integrated MOPA can fully play the advantage of light weight of a semiconductor laser, and reduce the system complexity caused by an external cavity structure, and is considered as one of the development directions of the semiconductor MOPA with great potential. At present, only research institutes of a few developed countries such as the united states and germany report research work of on-chip integrated MOPA, technical details of which are unknown, and meanwhile, basic research projects on semiconductor MOPA are successively started by domestic research institutes.
In the on-chip integrated semiconductor MOPA structure, a narrow ridge type semiconductor laser is used as a Main Oscillator (MO) to provide high-beam-quality seed source laser for a Power Amplifier (PA). The PA area adopts an electric injection design matched with a seed source laser mode to unidirectionally amplify incident seed source signal light, and finally laser scaling power amplification with high power and high beam quality is realized. In order to achieve higher output power, the PA region generally adopts an epitaxial structure of an asymmetric large optical cavity (EDAS), so that the mode confinement factor and the optical power density of the cavity surface are reduced, and the ultimate output power is finally increased.
However, for on-chip integrated MOPA, the EDAS structure has the main drawbacks: 1. the MO region needs to prepare a single-mode narrow ridge structure, and limiting materials on two sides of the ridge structure have an obvious limiting effect on a fast axis, so that the threshold difference between a fast axis fundamental mode and a high-order mode is reduced, and high-order mode lasing is easy to generate; 2. the low mode confinement factor increases the threshold current density of the MO region; 3. the MO area needs to be prepared with on-chip gratings to generate resonance, and the EDAS structure enables the optical field to be deviated from N measurement distribution, so that the coupling between the on-chip gratings and the optical field is reduced, and the preparation difficulty of the on-chip gratings is increased.
In summary, for the on-chip integrated MOPA structure, the MO region and the PA region have different requirements for the thickness of the epitaxial waveguide, and it is difficult to adopt a uniform epitaxial structure to simultaneously perform a better function in the two regions, which is very disadvantageous for preparing a high-performance semiconductor MOPA device. Therefore, it is very critical to realize two different optical cavity structures of MO region and PA region through epitaxial growth design.
Disclosure of Invention
In view of the above, in order to solve the above problems in the prior art, the present invention provides a semiconductor laser with a step waveguide thickness to effectively increase the fundamental mode confinement factor of the MO region, reduce the threshold current density, reduce the number of fast axis modes, avoid the lasing of high order modes, and reduce the difficulty in manufacturing the on-chip grating; meanwhile, the mode limiting factor of the PA area is reduced, and the laser power density of the cavity surface is reduced, so that the saturation output power is effectively improved, and the aim of laying a foundation for preparing a high-performance semiconductor MOPA laser is fulfilled.
The technical scheme adopted by the invention is as follows: a stepped waveguide thickness semiconductor laser comprising a substrate layer, the semiconductor laser further comprising:
the epitaxial structure comprises a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer which are sequentially arranged on the surface of a substrate layer from bottom to top, and the upper waveguide layer, the upper limiting layer and the ohmic contact layer form an epitaxial structure with step thickness;
the upper waveguide layer is etched in a selected area to form a step waveguide thickness, and an upper limiting layer and an ohmic contact layer are epitaxially grown on the surface of the step waveguide thickness for the second time to form the epitaxial structure;
the epitaxial structure with the step thickness is realized by combining selective area corrosion and secondary epitaxy, the waveguide thickness difference of an MO area and a PA area in an on-chip integrated MOPA device can be respectively controlled by adjusting the corrosion depth, and then two different mode limiting factors are realized in the two areas, so that the purposes of reducing the threshold current density of the MO area and improving the saturated amplification output power of the PA area are achieved.
Furthermore, the upper waveguide layer and the lower waveguide layer on the side of the low thickness in the thickness of the stepped waveguide are in the same thickness, and the upper waveguide layer and the lower waveguide layer on the side of the high thickness in the thickness of the stepped waveguide are in different thicknesses, so that the small optical cavity adopts a symmetrical epitaxial structure, the fundamental mode limiting factor is large, the mode gain is high, and the fundamental mode lasing can be kept even under the fast axis intensity limitation; meanwhile, the large optical cavity adopts an asymmetric epitaxial structure, so that the mode limiting factor is low, the power density of the cavity surface is low, the preparation of the semiconductor optical amplifier is facilitated, and the saturation output power is improved.
Further, the substrate layer is made of P-type doped GaAs material, and the doping concentration is 2 multiplied by 1018cm-3～1×1019cm-3(ii) a The substrate layer made of the P-type doped GaAs material is beneficial to reducing the thickness of the P waveguide layer in the thick waveguide area and reducing the internal optical loss of the device.
Further, the buffer layer is made of P-type GaAs material and has a doping concentration of 1 × 1018cm-3～3×1018cm-3The thickness of the buffer layer is 200-600 nm.
Further, the lower limiting layer is P-type doped AlxGa1-xAs material, x is 0.3-0.9, and the doping concentration is 3 x 1017cm-3～5×1018cm-3The thickness is 500-1200 nm.
Further, the lower waveguide layer is P-type doped AlxGa1-xAs material, and x is 0.1-0.3, and the thickness is 500-1300 nm.
Furthermore, the quantum well active layer is made of compressive strain InGaAs material, the thickness is 5-15 nm, and the lasing wavelength is 900-1000 nm.
Further, the upper waveguide layer is made of N-type doped AlxGa1-xAs material, and x is 0.1-0.3, and the thickness is 600-3000 nm.
Further, the upper limiting layer is N-type doped AlxGa1-xAs material, and x is selected from0.2 to 0.8, and a doping concentration of 3X 1017cm-3～2×1018cm-3The thickness is 500-1200 nm.
Furthermore, the ohmic contact layer is made of heavily doped N-type GaAs material with the doping concentration of 1 × 1018cm-3～1×1019cm-3And the thickness of the ohmic contact layer is 100 to 200 nm.
The invention has the beneficial effects that:
1. by adopting the semiconductor laser with the stepped waveguide thickness, the stepped waveguide thickness is formed on the upper waveguide layer through a selective area corrosion process, and the upper limiting layer and the ohmic contact layer are formed on the stepped waveguide thickness through secondary epitaxy, so that the epitaxial structure design with different waveguide thicknesses is realized on the same epitaxial wafer, the preparation of an on-chip integrated laser is facilitated, meanwhile, for the on-chip integrated MOPA, an MO area adopts a small optical cavity and a high fundamental mode limiting factor design, a fast axis high-order mode is effectively inhibited, the threshold current density is reduced, and the semiconductor laser is suitable for a high-beam quality seed source; the PA area adopts a large optical cavity and a low limiting factor design, so that the power density of the cavity surface is effectively reduced, the saturated output power of the laser is improved, and the PA area is suitable for a semiconductor optical amplifier.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a semiconductor laser with a stepped waveguide thickness according to the present invention;
the drawings are labeled as follows:
1-a substrate layer, 2-a buffer layer, 3-a lower limiting layer, 4-a lower waveguide layer, 5-a quantum well active layer, 6-an upper waveguide layer, 7-an upper limiting layer, 8-an ohmic contact layer, 9-a small optical cavity and 10-a large optical cavity.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that the indication of the orientation or the positional relationship is based on the orientation or the positional relationship shown in the drawings, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, or the orientation or the positional relationship which is usually understood by those skilled in the art, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, and is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, cannot be understood as limiting the present invention. Furthermore, the terms "first" and "second" are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be further noted that the terms "disposed" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases by those skilled in the art; the drawings in the embodiments are used for clearly and completely describing the technical scheme in the embodiments of the invention, and obviously, the described embodiments are a part of the embodiments of the invention, but not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Example 1
The embodiment specifically discloses a semiconductor laser with a stepped waveguide thickness, and aims to solve the problems that the conventional unified waveguide structure is difficult to simultaneously meet the requirements of an on-chip structure on fast axis mode control and power amplification and the like. As shown in fig. 1, the semiconductor laser should include a substrate layer, which is used as a base layer, and further include:
the epitaxial structure comprises a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer which are sequentially arranged from bottom to top on the surface of a substrate layer, and the upper waveguide layer, the upper limiting layer and the ohmic contact layer form an epitaxial structure with step thickness. The advantages of this design are: when the MOPA is integrated on a chip, a waveguide structure (also referred to as an epitaxial structure) of a step thickness can be formed. As in fig. 1, the number of modes existing for the small optical cavity of the laser is small, and the fundamental mode of the fast axis is easy to maintain when a narrow ridge device is prepared; the large optical cavity has low limiting factor and low power density of the cavity surface, and is beneficial to the amplification and output of high-power laser.
The epitaxial structure is prepared by selective area corrosion and combination of secondary epitaxy, and the specific preparation process is as follows:
and making an etching pattern on the upper waveguide layer by a photoetching process, forming a stepped waveguide thickness by a selective etching process according to the etching pattern, and performing secondary epitaxy on the stepped waveguide thickness to form an upper limiting layer and an ohmic contact layer. The selective area corrosion is realized by adopting solution wet etching or dry etching, and the specific selective corrosion process is determined according to the actual condition.
In practical applications, the side of the epitaxial structure that is lower in height (e.g., the left portion in fig. 1, also referred to as the etched region of the upper waveguide layer) is referred to as the small cavity of the laser, while the side that is higher in height (e.g., the right portion in fig. 1, also referred to as the unetched region of the upper waveguide layer) is referred to as the large cavity of the laser. The small optical cavity adopts a symmetrical epitaxial structure (namely the thicknesses of the upper waveguide layer and the lower waveguide layer on two sides of the quantum well active layer of the small optical cavity part are the same), the fundamental mode limiting factor is large, the mode gain is high, and the fundamental mode lasing can be kept even under the fast axis strong limitation. Meanwhile, the large optical cavity adopts an asymmetric epitaxial structure (namely, the thicknesses of the upper waveguide layer and the lower waveguide layer on two sides of the quantum well active layer positioned in the small optical cavity part are different), the mode limiting factor is low, the power density of the cavity surface is low, the preparation of a semiconductor optical amplifier is facilitated, and the saturated output power is improved.
The design for the various layers within the semiconductor laser is as follows:
(ii) an underlayer
The substrate layer is a P-type GaAs (100) single crystal wafer with a polarization direction, the polarization angle is 0-15 DEG, and the doping concentration is 2 multiplied by 1018cm-3～1×1019cm-3. In practical application, the substrate layer is biased<111>P-type GaAs (100) single crystal wafer with crystal orientation of 5 DEG and doping concentration of 5 x 1018cm-3。
② buffer layer
The buffer layer is made of P-type GaAs material and has a doping concentration of 1 × 1018cm-3～3×1018cm-3The thickness of the buffer layer is 200-600 nm. In practical application, the buffer layer is made of P-type GaAs material and has a thickness of 500nm and a doping concentration of 5 × 1018cm-3。
Lower limiting layer
The lower limiting layer is P-type doped AlxGa1-xAs material with doping concentration of 3 × 1017cm-3～5×1018cm-3(ii) a The thickness of the lower limiting layer is 500-1200 nm; wherein the value of x is 0.1-0.6; in this embodiment, the lower limiting layer is P-doped Al0.43Ga0.57As material with thickness of 700nm and doping concentration of 1 × 1018cm-3。
Fourthly, lower waveguide layer
The lower waveguide layer is P-type unintentionally doped AlxGa1-xAs material, and x is 0.1-0.3, and the thickness of the lower waveguide layer is 500-1300 nm. In this embodiment, the lower waveguide layer is unintentionally doped Al0.2Ga0.8As material and thickness of 700 nm.
Quantum well active layer
The quantum well active layer is made of compressive strain InGaAs material, the thickness is 5-15 nm, and the lasing wavelength is 900-1000 nm. In this embodiment, the quantum well is InGaAs material with a thickness of 8nm, and the lasing wavelength is 980 nm.
Upper waveguide layer
The upper waveguide layer is N-type unintentionally doped AlxGa1-xAs material, the thickness of the upper waveguide layer is 600-3000 nm, and the corrosion depth is 600-1300 nm, so As to form the thickness of the step waveguide; wherein, the value range of x is 0.1-0.3. Due to AlxGa1- xThe As material layer is matched with the GaAs substrate layer, so that the secondary growth can be carried out for a certain thickness without generating defects, and the crystallization quality of the material is ensured. In this embodiment, the upper waveguide layer is unintentionally doped Al0.2Ga0.8As material with thickness of 1600 nm; the selective area corrosion depth is 900nm, namely the thickness of the upper waveguide layer at the small optical cavity part is 700nm, so that the small optical cavity adopts a symmetrical epitaxial structure and the large optical cavity adopts an asymmetrical epitaxial structure.
Because the etching process can form a steep interface, the epitaxial material can be continuously grown without generating obvious epitaxial interface defects, and the upper limit layer and the ohmic contact layer with high quality can be obtained.
Seventhly an upper limiting layer
The upper limiting layer is N-type doped AlxGa1-xAs material, x is 0.2-0.8, and the doping concentration is 3 x 1017cm-3～2×1018cm-3The thickness is 500-1200 nm. In this embodiment, the upper limiting layer is N-type doped Al0.43Ga0.57As material with thickness of 700nm and doping concentration of 1 × 1018cm-3。
Omega ohmic contact layer
The ohmic contact layer is heavily doped N-type GaAs with a doping concentration of 1 × 1018cm-3～1×1019cm-3The thickness is 100 to 200 nm. In this embodiment, the ohmic contact layer is N-type GaAs material with a thickness of 200nm and a doping concentration of 2 × 1018cm-3。
Based on the semiconductor laser with the stepped waveguide thickness, as shown in table 1, in this embodiment, after selective etching and secondary epitaxy are adopted, the fundamental mode confinement factor of a small optical cavity region is obviously high, and the mode loss of a high-order mode is very large, so that the semiconductor laser is very suitable for preparing a high-performance narrow ridge type seed source; table 1 is as follows:
TABLE 1
Fast axis mode Limiting factor Mode loss (cm)-1)
TE00 1.26％ 0.73
TE01 0.26％ 1.55
TE02 0.35％ 2.25
As shown in table 2, the fundamental mode confinement factor of the large optical cavity epitaxial structure is low, and when a narrow ridge device is prepared, since the low refractive index materials on the two sides of the ridge are also subjected to enhanced confinement in the fast axis direction, fast axis high-order mode lasing is easily caused, and the fundamental mode output power is low; table 2 is as follows:
TABLE 2
Fast axis mode Limiting factor Mode loss (cm)-1)
TE00 0.97％ 0.58
TE01 0.22％ 0.93
TE02 0.20％ 1.20
Therefore, the problems that the on-chip structure needs fast axis mode control, power amplification and the like can be met simultaneously.
The invention is not limited to the above alternative embodiments, and any other various forms of products can be obtained by anyone in the light of the present invention, but any changes in shape or structure thereof, which fall within the scope of the present invention as defined in the claims, fall within the scope of the present invention.

Claims (10)

1. A stepped waveguide thickness semiconductor laser comprising a substrate layer, characterized in that the semiconductor laser further comprises:
the epitaxial structure comprises a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer which are sequentially arranged on the surface of a substrate layer from bottom to top, and the upper waveguide layer, the upper limiting layer and the ohmic contact layer form an epitaxial structure with step thickness;
and the upper waveguide layer is etched in a selected area to form a step waveguide thickness, and an upper limiting layer and an ohmic contact layer are epitaxially grown on the surface of the step waveguide thickness for the second time to form the epitaxial structure.
2. The stepped waveguide thickness semiconductor laser as claimed in claim 1, wherein the upper and lower waveguide layers on the side of the stepped waveguide thickness where the low thickness is located are the same thickness, and the upper and lower waveguide layers on the side of the stepped waveguide thickness where the high thickness is located are different thicknesses.
3. The stepped waveguide thickness semiconductor laser of claim 1, wherein the substrate layer is a P-type doped GaAs material with a doping concentration of 2 x 1018cm-3～1×1019cm-3。
4. The stepped waveguide thickness semiconductor laser of claim 1, wherein the buffer layer is a P-type GaAs material with a doping concentration of 1 x 1018cm-3～3×1018cm-3The thickness of the buffer layer is 200-600 nm.
5. The stepped waveguide thickness semiconductor laser of claim 1, wherein the lower confinement layer is P-type doped AlxGa1-xAs material, and x has a value of 0.3About 0.9, doping concentration of 3X 1017cm-3～5×1018cm-3The thickness is 500-1200 nm.
6. The stepped waveguide thickness semiconductor laser of claim 1, wherein the lower waveguide layer is P-doped AlxGa1-xAs material, and x is 0.1-0.3, and the thickness is 500-1300 nm.
7. The step-waveguide thick semiconductor laser as claimed in claim 1, wherein the quantum well active layer is a compressively strained InGaAs material with a thickness of 5-15 nm and a lasing wavelength of 900-1000 nm.
8. The stepped waveguide thickness semiconductor laser of claim 1, wherein the upper waveguide layer is N-doped AlxGa1-xAs material, and x is 0.1-0.3, and the thickness is 600-3000 nm.
9. The stepped waveguide thickness semiconductor laser of claim 1, wherein the upper confinement layer is N-doped AlxGa1-xAs material, x is 0.2-0.8, and the doping concentration is 3 x 1017cm-3～2×1018cm-3The thickness is 500-1200 nm.
10. The stepped waveguide thickness semiconductor laser as claimed in claim 1 wherein the ohmic contact layer is heavily doped N-type GaAs material with a doping concentration of 1 x 1018cm-3～1×1019cm-3And the thickness of the ohmic contact layer is 100 to 200 nm.
CN202110157864.4A 2021-02-05 2021-02-05 Semiconductor laser with stepped waveguide thickness Pending CN112821199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110157864.4A CN112821199A (en) 2021-02-05 2021-02-05 Semiconductor laser with stepped waveguide thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110157864.4A CN112821199A (en) 2021-02-05 2021-02-05 Semiconductor laser with stepped waveguide thickness

Publications (1)

Publication Number Publication Date
CN112821199A true CN112821199A (en) 2021-05-18

Family

ID=75861493

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110157864.4A Pending CN112821199A (en) 2021-02-05 2021-02-05 Semiconductor laser with stepped waveguide thickness

Country Status (1)

Country Link
CN (1) CN112821199A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618959A (en) * 1982-10-12 1986-10-21 Nec Corporation Double heterostructure semiconductor laser with periodic structure formed in guide layer
US5621837A (en) * 1993-08-09 1997-04-15 Nippon Telegraph & Telephone Corporation Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit and process for fabricating platform
CN105514801A (en) * 2016-01-20 2016-04-20 中国科学院半导体研究所 Two-groove wide-ridge type semiconductor light amplifier and preparation method thereof
CN107579431A (en) * 2017-10-23 2018-01-12 海南师范大学 A kind of M types tapered waveguide semiconductor laser structure
CN108346973A (en) * 2017-01-24 2018-07-31 山东华光光电子股份有限公司 A kind of 795nm quantum-well lasers based on AlGaAs/GaInP active areas

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618959A (en) * 1982-10-12 1986-10-21 Nec Corporation Double heterostructure semiconductor laser with periodic structure formed in guide layer
US5621837A (en) * 1993-08-09 1997-04-15 Nippon Telegraph & Telephone Corporation Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit and process for fabricating platform
CN105514801A (en) * 2016-01-20 2016-04-20 中国科学院半导体研究所 Two-groove wide-ridge type semiconductor light amplifier and preparation method thereof
CN108346973A (en) * 2017-01-24 2018-07-31 山东华光光电子股份有限公司 A kind of 795nm quantum-well lasers based on AlGaAs/GaInP active areas
CN107579431A (en) * 2017-10-23 2018-01-12 海南师范大学 A kind of M types tapered waveguide semiconductor laser structure

Similar Documents

Publication Publication Date Title
JP3613348B2 (en) Semiconductor light emitting device and manufacturing method thereof
CN109861078B (en) Surface emitting laser and surface emitting laser array
CN112421378B (en) Semiconductor laser
CN102593719A (en) Edge-emission semiconductor laser for improving light field distribution of active area
CN108233180B (en) 808nm semiconductor laser structure with AlGaInP structure
WO2020151290A1 (en) On-chip integrated semiconductor laser structure and manufacturing method thereof
JPS5940592A (en) Semiconductor laser element
CN112787217A (en) Wavelength-locked high-efficiency semiconductor laser and preparation method thereof
CN219086444U (en) Semiconductor laser
CN112821199A (en) Semiconductor laser with stepped waveguide thickness
JP2537924B2 (en) Semiconductor laser
CN112615258B (en) Semiconductor laser structure
CN105406355A (en) Manufacturing method for co-cavity dual-wavelength distributed feedback laser
US4821278A (en) Inverted channel substrate planar semiconductor laser
CN109962405A (en) A kind of H+implantation grid VCSEL and preparation method thereof
JPH04234188A (en) Optoelectronic element and laser and their uses in optical detector manufacture
Bhattacharya et al. High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays
CN113381294B (en) Monolithic integrated edge-emitting laser and preparation method thereof
CN115912047A (en) Semiconductor laser with one-step forming microstructure and convex conical optical amplifier
JPS596588A (en) Semiconductor laser
CN116137414A (en) Narrow linewidth high-power laser and preparation method thereof
CN113675723A (en) Microcavity quantum cascade laser for continuous lasing and preparation method thereof
Wang Lateral pn junctions containing p-type (311) A facets in nonplanar metalorganic vapor phase epitaxy of AlGaAs lasers
KR100289728B1 (en) Semiconductor laser device and manufacturing method thereof
CN116231450A (en) Edge-emitting laser for realizing generation on space beam chip

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20210518