CN109962405A - A kind of H+implantation grid VCSEL and preparation method thereof - Google Patents

A kind of H+implantation grid VCSEL and preparation method thereof Download PDF

Info

Publication number
CN109962405A
CN109962405A CN201910345575.XA CN201910345575A CN109962405A CN 109962405 A CN109962405 A CN 109962405A CN 201910345575 A CN201910345575 A CN 201910345575A CN 109962405 A CN109962405 A CN 109962405A
Authority
CN
China
Prior art keywords
dbr
implantation
alas
algaas
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910345575.XA
Other languages
Chinese (zh)
Inventor
王智勇
周广正
李颖
兰天
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing University of Technology
Original Assignee
Beijing University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Technology filed Critical Beijing University of Technology
Publication of CN109962405A publication Critical patent/CN109962405A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

A kind of H+implantation grid VCSEL and preparation method thereof, belongs to technical field of semiconductors.The VCSEL includes DBR, H+implantation lattice structure, the DBR of secondary epitaxy p-type AlGaAs/AlAs, p-type GaAs ohmic contact layer, the face n electrode and the face the p electrode of a conduction GaAs substrate, N-shaped GaAs buffer layer, DBR, AlGaAs lower limit layer of N-shaped AlGaAs/AlAs, multiple quantum-well light-emitting area, AlGaAs upper limiting layer, epitaxial p-type AlGaAs/AlAs.The H+implantation lattice structure includes 3-5 to DBR thickness, can provide effective electric current and gain limitation and control H+implantation depth well；H+implantation raster width is successively decreased from center to both sides, and whole gain of light distribution matches with single transverse mode Gaussian Profile, realizes steadily single transverse mode lasing.

Description

A kind of H+implantation grid VCSEL and preparation method thereof
Technical field
The invention belongs to technical field of semiconductors, and in particular to the preparation method of H+implantation grid VCSEL.
Background technique
Vertical cavity surface emitting laser (VCSEL) is low in energy consumption with its, the integrated, circular light spot that is easy to two dimension easily with optical fiber coupling Conjunction, On-wafer measurement save the advantages such as cost, are widely used in the fields such as 3D sensing, laser printing, optic communication and optical storage. VCSEL generally comprises columnar resonator structure, wherein buffer layer, lower DBR, lower limit layer, mqw light emitting layer, upper limitation Layer, upper DBR and ohmic contact layer.In order to reduce threshold current, current confinement structure is formed using oxidation or H+implantation.It is connecing Contact layer and substrate quilt cover make electrode respectively, and electric current is from electrode injection to quantum well radiation area, due to the electron-hole amount of being compounded in It shines, is reflected through upper and lower DBR, from the top-emission laser of resonator structure in sub- trap.In laser emission region, fundamental transverse mode Oscillation is primarily generated in central area, and high-order transverse mode oscillation is primarily generated at neighboring area.General single transverse mode VCSEL is main It is oxidation restricted type VCSEL, however VCSEL oxidation makes the reliability decrease of device.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art.For this purpose, present invention aims at mention A kind of H+implantation grid VCSEL out realizes the output of high power single transverse mode lasers.The technical solution adopted by the invention is as follows:
A kind of H+implantation grid VCSEL successively includes a conduction GaAs substrate, N-shaped GaAs buffer layer, n from bottom to top DBR, AlGaAs lower limit layer, multiple quantum-well light-emitting area, the AlGaAs upper limiting layer of type AlGaAs/AlAs；In the AlGaAs upper limit Preparative layer is the DBR and H+implantation lattice structure transpostion interval permutation and combination of an epitaxial p-type AlGaAs/AlAs；Primary outer Prolong and is followed successively by secondary epitaxy p-type on the DBR and H+implantation lattice structure transpostion interval permutation and combination of p-type AlGaAs/AlAs DBR, the p-type GaAs ohmic contact layer of AlGaAs/AlAs；It is equipped with the face n electrode at the back side of conductive GaAs substrate, in p-type GaAs Ohmic contact layer is equipped with the face p electrode.
The DBR and H+implantation lattice structure of epitaxial p-type AlGaAs/AlAs is circular ring structure, above-mentioned primary outer Prolong in the DBR and H+implantation lattice structure transpostion interval permutation and combination scheme of p-type AlGaAs/AlAs, center is an extension p The DBR circle of type AlGaAs/AlAs is followed successively by H+implantation lattice structure annulus and epitaxial p-type AlGaAs/AlAs outward The arrangement of DBR annulus transpostion interval, and most outer ring is H+implantation lattice structure.
The DBR:DBR of epitaxial p-type AlGaAs/AlAs is by 3-5 to λ0The Al of/4 optical thicknesses0.12Ga0.88As/ AlAs is constituted, doping concentration 1E18-3E18cm-3；
The DBR and H+implantation lattice structure transpostion interval permutation and combination scheme of an above-mentioned epitaxial p-type AlGaAs/AlAs In H+implantation lattice structure, H+implantation lattice structure include 3-5 to DBR thickness, effective electric current and increasing can be provided Benefit limitation, and H+implantation depth can be controlled well；The arrangement of multiple H+implantation lattice structures, H+implantation raster width Gradually successively decrease from center to both sides.
In above scheme, the DBR of secondary epitaxy p-type AlGaAs/AlAs, DBR is by 16-18 to λ0/ 4 optical thicknesses Al0.12Ga0.88As/AlAs is constituted, doping concentration 2E18cm-3；
The present invention also provides a kind of above-mentioned preparation methods of H+implantation grid VCSEL, which is characterized in that including following Step:
(1) a GaAs conductive substrates are chosen, is put into feux rouges MOCVD, is passed through AsH3Remove water and the oxide etc. on surface. Successively DBR, AlGaAs lower limit layer, the multiple quantum well light emitting of growing n-type GaAs buffer layer, N-shaped AlGaAs/AlAs from bottom to top Area, AlGaAs upper limiting layer, epitaxial p-type AlGaAs/AlAs DBR；
(2) use obtained by the step (1) PECVD method deposition thickness for 1-2 μm of SiO on epitaxial wafer2Film；Through photoetching Row's lattice structure is produced with etching, raster width is successively decreased from center to both sides；The remaining SiO not etched2Make part For H+implantation exposure mask；
(3) H is utilized+H+implantation epitaxial wafer, injection metering are 1E15cm-2, Implantation Energy 30-60keV, the matter of injection The positional distance surface of sub- peak concentration is 1-3 to DBR；
(4) SiO is etched2Exposure mask cleans epitaxial wafer；It is put into MOCVD and successively grows secondary epitaxy p-type AlGaAs/AlAs DBR and p-type GaAs ohmic contact layer；
(5) face p electrode is made at top, by substrate thinning to 100 μm, makes the face n electrode in substrate back.
The beneficial effects of the present invention are: avoiding oxidation bring integrity problem using H+implantation method.Proton note Enter with a thickness of 3-5 to DBR, be easy the depth of accurate control H+implantation, avoid H+implantation too deep to quantum well radiation area It causes to damage.The equal no current limitation of the p-type DBR and ohmic contact layer of secondary epitaxy, reduces the series resistance of DBR.Proton note Enter raster width to be successively decreased from center to both sides, whole gain of light distribution matches with single transverse mode Gaussian Profile, realizes steadily single Transverse mode lasing.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures Obviously and it is readily appreciated that, in which:
Fig. 1 is the H+implantation grid vcsel structure schematic diagram of the embodiment of the present invention.
Fig. 2 is the embodiment primary outer schematic diagram delayed on conductive substrates.
Fig. 3 is the SiO that embodiment is formed after etching2The schematic diagram of exposure mask.
Fig. 4 is the lattice structure schematic diagram that embodiment is formed after the proton implantation.
Fig. 5 is structural schematic diagram of the embodiment in secondary epitaxy DBR and contact layer.
Fig. 6 is the electric current and optical field distribution schematic diagram inside embodiment.
Conductive GaAs substrate 11, N-shaped GaAs buffer layer 12, the DBR 13 of N-shaped AlGaAs/AlAs, AlGaAs lower limit layer 14, multiple quantum-well light-emitting area 15,16, epitaxial p-type AlGaAs/AlAs of AlGaAs upper limiting layer DBR 17, H+implantation Exposure mask 21, H+implantation lattice structure 31, the DBR 41 of secondary epitaxy p-type AlGaAs/AlAs, p-type GaAs ohmic contact layer 42, The face p electrode 51, the face n electrode 52, electric current 61, basement membrane Gaussian beam 62.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
Embodiment 1
A kind of H+implantation grid vcsel structure provided according to embodiments of the present invention is described below with reference to Fig. 1.It is wrapped Include: a conduction GaAs substrate 11, N-shaped GaAs buffer layer 12, the DBR 13 of N-shaped AlGaAs/AlAs, AlGaAs lower limit layer 14, DBR 17, the H+implantation grid of 16, multiple quantum-well light-emitting area 15, AlGaAs upper limiting layer epitaxial p-type AlGaAs/AlAs Structure 31, the DBR 41 of secondary epitaxy p-type AlGaAs/AlAs, p-type GaAs ohmic contact layer 42, the face n electrode 52 and the face p electrode 51。
The present invention also provides the preparation methods of H+implantation grid VCSEL a kind of, comprising the following steps:
Step 1: a conduction GaAs substrate being put into MOVCD, chamber room temperature is increased to 700-750 DEG C, is passed through H2With AsH3, remove the water and oxide of substrate surface.600-650 DEG C is cooled the temperature to, and is passed through TMGa, AsH into chamber3Deng raw Long N-type buffer layer, with a thickness of 1000nm, doping concentration 2E18cm-3.It is passed through TMGa, TMAl, AsH3And Si2H6, growth, N-shaped Al0.12Ga0.88The DBR of As/AlAs, with a thickness of 3988nm, doping concentration 2E18cm-3；It is passed through TMGa, TMAl and AsH3, growth Lower Al0.60Ga0.40As limiting layer, with a thickness of 110nm；It is passed through TMIn, TMGa, TMAl and AsH3, grow Al0.37Ga0.67As/ In0.08Ga0.92As Quantum Well, with a thickness of 45nm, photoluminescence wavelength ratio λ0Small 10-20nm, wherein λ0For excitation wavelength；It is logical Enter TMGa, TMAl and AsH3, grow Al0.60Ga0.40As upper limiting layer, with a thickness of 110nm；It is passed through TMGa, TMAl, AsH3With CBr4, grow an epitaxial p-type Al0.12Ga0.88As/AlAs DBR, with a thickness of 392-654nm, doping concentration 2E18cm-3；Knot Structure is as shown in Figure 2.
Step 2: the SiO for being 1-2 μm in extension on piece deposition thickness using PECVD2Film；It is produced through lithography and etching Lattice structure, raster width are successively decreased from center to both sides, specific width d1It is 0.1-0.2 μm, d2It is 0.4-0.5 μm, d3For 0.7- 0.8 μm, d4It is 3.0-3.5 μm；Remaining SiO2As H+implantation exposure mask 21；As shown in Figure 3.
Step 3: utilizing H+H+implantation epitaxial wafer, injection metering are 1E15cm-2, Implantation Energy 30-60keV, injection Proton peak concentration positional distance surface be 1-3 to DBR；As shown in Figure 4.
Step 4: etching SiO2Exposure mask cleans epitaxial wafer；Epitaxial wafer is put into MOCVD, TMGa, TMA, AsH are passed through3With CBr4, grow secondary epitaxy p-type Al0.12Ga0.88The DBR of As/AlAs, with a thickness of 2092-2353nm, doping concentration 2E18cm-3；It is passed through TMGa, AsH3And CBr4, p-type GaAs ohmic contact layer is grown, with a thickness of 60nm, doping concentration 1E20cm-3；Such as figure Shown in 5.
Step 5: making the face p electrode at top, by substrate thinning to 100 μm, make the face n electrode in substrate back；Such as Fig. 1 It is shown.
Fig. 6 is the electric current and light field schematic diagram inside VCSEL, is gradually subtracted since center grates width is larger, and to both sides It is small, so the electric current 61 passed through is also gradually reduced from center to both sides.Since the gain of light and distribution of light intensity and Injection Current claim just Than, therefore the gain of light has center to be also gradually reduced to two sides.So that the gain of light matches with basement membrane Gaussian beam 62, and then realize Stable single transverse mode lasing.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ", The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot Structure, material or feature are included at least one embodiment or example of the invention.In the present specification, to above-mentioned term Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description Point can be combined in any suitable manner in any one or more of the embodiments or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this The range of invention is defined by the claims and their equivalents.

Claims (9)

1. a kind of H+implantation grid VCSEL, which is characterized in that from bottom to top successively include a conduction GaAs substrate, N-shaped GaAs Buffer layer, DBR, AlGaAs lower limit layer of N-shaped AlGaAs/AlAs, multiple quantum-well light-emitting area, AlGaAs upper limiting layer；? AlGaAs upper limiting layer is the DBR and H+implantation lattice structure transpostion interval arrangement group of an epitaxial p-type AlGaAs/AlAs It closes；Two are followed successively by the DBR of epitaxial p-type AlGaAs/AlAs and H+implantation lattice structure transpostion interval permutation and combination DBR, the p-type GaAs ohmic contact layer of secondary epitaxial p-type AlGaAs/AlAs；It is equipped with the face n electrode at the back side of conductive GaAs substrate, The face p electrode is equipped on p-type GaAs ohmic contact layer.
2. a kind of H+implantation grid VCSEL described in accordance with the claim 1, which is characterized in that an epitaxial p-type AlGaAs/ In the DBR and H+implantation lattice structure transpostion interval permutation and combination scheme of AlAs, epitaxial p-type AlGaAs/AlAs's DBR:DBR is by 3-5 to λ0The Al of/4 optical thicknesses0.12Ga0.88As/AlAs is constituted.
3. a kind of H+implantation grid VCSEL according to claim 2, which is characterized in that the doping concentration of DBR is 1E18-3E18cm-3。
4. a kind of H+implantation grid VCSEL described in accordance with the claim 1, which is characterized in that an epitaxial p-type AlGaAs/ The DBR and H+implantation lattice structure of AlAs is circular ring structure, the DBR and proton of an above-mentioned epitaxial p-type AlGaAs/AlAs Inject in lattice structure transpostion interval permutation and combination scheme, the DBR circle that center is epitaxial p-type AlGaAs/AlAs, outward according to It is secondary to be arranged for the DBR annulus transpostion interval of H+implantation lattice structure annulus and an epitaxial p-type AlGaAs/AlAs and outermost Ring is H+implantation lattice structure.
5. a kind of H+implantation grid VCSEL described in accordance with the claim 1, which is characterized in that an epitaxial p-type AlGaAs/ H+implantation lattice structure in the DBR and H+implantation lattice structure transpostion interval permutation and combination scheme of AlAs, H+implantation Lattice structure includes 3-5 to DBR thickness.
6. a kind of H+implantation grid VCSEL described in accordance with the claim 1, which is characterized in that an epitaxial p-type AlGaAs/ H+implantation lattice structure in the DBR and H+implantation lattice structure transpostion interval permutation and combination scheme of AlAs, multiple protons The arrangement of lattice structure is injected, H+implantation raster width gradually successively decreases from center to both sides.
7. a kind of H+implantation grid VCSEL described in accordance with the claim 1, which is characterized in that secondary epitaxy p-type AlGaAs/ The DBR of AlAs, DBR are by 16-18 to λ0The Al of/4 optical thicknesses0.12Ga0.88As/AlAs is constituted.
8. a kind of H+implantation grid VCSEL according to claim 7, which is characterized in that secondary epitaxy p-type AlGaAs/ The DBR of AlAs, doping concentration 2E18cm-3。
9. a kind of described in any item preparation methods of H+implantation grid VCSEL of claim 1-8, which is characterized in that including Following steps:
(1) a GaAs conductive substrates are chosen, is put into feux rouges MOCVD, is passed through AsH3Remove water and the oxide etc. on surface.Under On and successively growing n-type GaAs buffer layer, DBR, AlGaAs lower limit layer of N-shaped AlGaAs/AlAs, multiple quantum-well light-emitting area, The DBR of AlGaAs upper limiting layer, epitaxial p-type AlGaAs/AlAs；
(2) use obtained by the step (1) PECVD method deposition thickness for 1-2 μm of SiO on epitaxial wafer2Film；Through photoetching and quarter Row's lattice structure is produced in erosion, and raster width is successively decreased from center to both sides；The remaining SiO not etched2Part is used as matter Son injection exposure mask；
(3) H is utilized+H+implantation epitaxial wafer, injection metering are 1E15cm-2, Implantation Energy 30-60keV, the proton peak of injection The positional distance surface for being worth concentration is 1-3 to DBR；
(4) SiO is etched2Exposure mask cleans epitaxial wafer；It is put into the DBR that secondary epitaxy p-type AlGaAs/AlAs is successively grown in MOCVD With p-type GaAs ohmic contact layer；
(5) face p electrode is made at top, by substrate thinning to 100 μm, makes the face n electrode in substrate back.
CN201910345575.XA 2018-06-26 2019-04-26 A kind of H+implantation grid VCSEL and preparation method thereof Pending CN109962405A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2018106731155 2018-06-26
CN201810673115.5A CN108539577A (en) 2018-06-26 2018-06-26 A kind of electric current guided VCSEL and preparation method thereof

Publications (1)

Publication Number Publication Date
CN109962405A true CN109962405A (en) 2019-07-02

Family

ID=63487233

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201810673115.5A Withdrawn CN108539577A (en) 2018-06-26 2018-06-26 A kind of electric current guided VCSEL and preparation method thereof
CN201910345575.XA Pending CN109962405A (en) 2018-06-26 2019-04-26 A kind of H+implantation grid VCSEL and preparation method thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201810673115.5A Withdrawn CN108539577A (en) 2018-06-26 2018-06-26 A kind of electric current guided VCSEL and preparation method thereof

Country Status (1)

Country Link
CN (2) CN108539577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112993751A (en) * 2021-01-28 2021-06-18 湖北光安伦芯片有限公司 Nano-column VCSEL light source structure and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612433A (en) * 2003-10-27 2005-05-04 安捷伦科技有限公司 Single-mode vertical cavity surface emitting lasers and methods of making the same
CN1901299A (en) * 2005-07-22 2007-01-24 海德威电子工业股份有限公司 Vertical cavity surface emitting laser and method for fabricating the same
CN105655867A (en) * 2016-04-14 2016-06-08 北京工业大学 Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array
CN208272356U (en) * 2018-06-26 2018-12-21 北京工业大学 A kind of electric current guided VCSEL

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612433A (en) * 2003-10-27 2005-05-04 安捷伦科技有限公司 Single-mode vertical cavity surface emitting lasers and methods of making the same
CN1901299A (en) * 2005-07-22 2007-01-24 海德威电子工业股份有限公司 Vertical cavity surface emitting laser and method for fabricating the same
CN105655867A (en) * 2016-04-14 2016-06-08 北京工业大学 Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array
CN208272356U (en) * 2018-06-26 2018-12-21 北京工业大学 A kind of electric current guided VCSEL

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112993751A (en) * 2021-01-28 2021-06-18 湖北光安伦芯片有限公司 Nano-column VCSEL light source structure and preparation method thereof
CN112993751B (en) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 Nano-column VCSEL light source structure and preparation method thereof

Also Published As

Publication number Publication date
CN108539577A (en) 2018-09-14

Similar Documents

Publication Publication Date Title
US7394104B2 (en) Semiconductor optical device having current-confined structure
US11424597B2 (en) Tunnel junction for GaAs based VCSELs and method therefor
JP3623713B2 (en) Nitride semiconductor light emitting device
CN103872580A (en) Dielectric film current limiting type vertical cavity surface emitting laser and manufacturing method thereof
CN106654857A (en) High-beam-quality large-scale VCSEL in-phase coupled array
CN105552715A (en) High-gain vertical cavity surface emitting semiconductor laser suitable for high-temperature operation
CN101588018B (en) Inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device
CN114944592A (en) Vertical cavity surface emitting laser and method of manufacturing the same
JP3181303B2 (en) Light emitting element
CN208272356U (en) A kind of electric current guided VCSEL
CN212659824U (en) 808nm laser epitaxial wafer
CN201435526Y (en) Outer-cavity high-power photonic-crystal vertical-cavity surface-emitting semiconductor laser with three active areas
CN109962405A (en) A kind of H+implantation grid VCSEL and preparation method thereof
CN219086444U (en) Semiconductor laser
Li et al. High-efficiency 808-nm InGaAlAs–AlGaAs double-quantum-well semiconductor lasers with asymmetric waveguide structures
CN101588019A (en) External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device
US7929588B2 (en) Semiconductor devices and methods for generating light
US20220247154A1 (en) Edge emitting laser device
CN102832537B (en) Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure
JP2011134967A (en) Semiconductor light emitting element
TWI240470B (en) Single-mode laser diode using strain-compensated multi-quantum-wells
CN210040877U (en) Vertical cavity surface emitting laser with horizontal air column current injection aperture structure
CN201435527Y (en) Low-threshold inner-cavity photonic-crystal vertical-cavity surface-emitting semiconductor laser with three active areas
CN210468377U (en) High-speed DFB laser
CN110148885B (en) Vertical cavity surface emitting laser with horizontal air column current injection aperture structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190702

WD01 Invention patent application deemed withdrawn after publication