CN112820782A - Graphene silicon-based solar cell and manufacturing method thereof - Google Patents

Graphene silicon-based solar cell and manufacturing method thereof Download PDF

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CN112820782A
CN112820782A CN202110006262.9A CN202110006262A CN112820782A CN 112820782 A CN112820782 A CN 112820782A CN 202110006262 A CN202110006262 A CN 202110006262A CN 112820782 A CN112820782 A CN 112820782A
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silicon
graphene
grid line
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黄俊雄
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • Y02E10/547—Monocrystalline silicon PV cells
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Abstract

The invention relates to the technical field of solar cells, in particular to a graphene silicon-based solar cell and a manufacturing method thereof. The utility model provides a graphite alkene silicon-based solar cell, through be provided with monocrystalline silicon piece between positive metal electrode, back metal electrode, be provided with the cyclic annular silica layer of through-hole on the monocrystalline silicon piece, the surface on silica layer and the monocrystalline silicon piece surface that exposes by silica layer through-hole set up graphite alkene film, silicon nitride film, the monocrystalline silicon piece surface that exposes by silica layer through-hole still is equipped with the grid line electrode, graphite alkene film, silicon nitride film with monocrystalline silicon piece with the grid line electrode closely combines, can effectively reduce the charge recombination effect on silicon surface, improves the efficiency of carrier separation and transmission to improve the photoelectric conversion efficiency of battery, and this graphite alkene silicon-based solar cell structure and preparation simple process are suitable for batch production.

Description

Graphene silicon-based solar cell and manufacturing method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a graphene silicon-based solar cell and a manufacturing method thereof.
Background
Along with the pollution of the traditional coal-fired power generation to the environment, the safety problem of nuclear power and other reasons, the solar photovoltaic industry has been more and more emphasized by people as a novel green energy source in recent years, especially crystalline silicon batteries, and the market share of the crystalline silicon batteries accounts for about 90% due to the high photoelectric conversion efficiency and stable performance of the crystalline silicon batteries. However, the solar cell is relatively high in cost compared to conventional power generation, so that it cannot be applied on a large scale. One factor affecting solar power generation is high manufacturing cost, and the other factor is low conversion efficiency.
The advent of graphene is receiving increased attention, and many unique properties are gradually being discovered and applied to many fields. The graphene has high light transmittance and excellent conductivity, and provides a good foundation for the graphene to become a material of a solar cell.
The current manufacturing process of the conventional crystalline silicon solar cell generally comprises the following steps: chemical cleaning and surface texturing, diffusion and knot making, edge etching and phosphorosilicate glass removal, antireflection film deposition, electrode printing and sintering. In the process of converting light energy into electric energy, photogenerated carriers generated in the solar cell need to be collected and led out through an externally printed electrode and then connected with an external circuit, so that current is transmitted out.
Because the series resistance is reduced and the current collection capability is improved at present, the shading rate of grid lines in the prior art reaches more than 6 percent, and the utilization efficiency of solar cells is reduced. In addition, precious metal is needed to be used as conductive paste when the electrodes are printed, and the use of the conductive paste is increased due to the fact that the main grid line and the auxiliary grid line are covered on a silicon wafer in a large area.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a graphene-silicon-based solar cell and a method for manufacturing the same.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: the utility model provides a graphite alkene silicon-based solar cell, includes positive metal electrode, back metal electrode, be provided with monocrystalline silicon piece between positive metal electrode, the back metal electrode, be provided with the cyclic annular silica layer of through-hole on the monocrystalline silicon piece, the surface on silica layer and the monocrystalline silicon piece surface that exposes by silica layer through-hole set up graphite alkene film, silicon nitride film, the monocrystalline silicon piece surface that exposes by silica layer through-hole still is equipped with the grid line electrode, graphite alkene film, silicon nitride film with monocrystalline silicon piece with grid line electrode closely combines.
Further, the thickness of the silicon nitride film is 80-90nm, and the thickness of the graphene film is 1-10 nm.
Further, the monocrystalline silicon wafer comprises one or more of an N-type monocrystalline silicon wafer and a P-type monocrystalline silicon wafer.
Furthermore, the diffusion sheet resistance of the monocrystalline silicon piece is 80-100 ohm, and the junction depth is 0.2-0.5 μm.
Further, the grid line electrode is in a wave shape.
Further, the grid line electrodes comprise main grid line electrodes and secondary grid line electrodes, and the main grid line electrodes and the secondary grid line electrodes are arranged in a grid shape in a staggered mode.
Furthermore, holes matched with the wavy grid line electrodes are formed in the silicon dioxide layer.
Furthermore, the grid line electrode material is made of Au, Ag, Pt, Ni, ZnO, ITO and TiO2And one or more of nanomaterials thereof.
A preparation method of a graphene silicon-based solar cell sequentially comprises the steps of preparing an annular silicon dioxide layer on the front surface of a monocrystalline silicon piece; preparing a grid line electrode on the surface of the monocrystalline silicon wafer exposed from the through hole of the silicon dioxide layer; preparing a graphene film and a silicon nitride film on the surface of the silicon dioxide layer and the surface of the monocrystalline silicon piece exposed by the through hole of the silicon dioxide layer, so that the graphene film and the silicon nitride film are tightly combined with the monocrystalline silicon piece and the grid line electrode; and preparing a back electrode on the back surface of the monocrystalline silicon wafer.
Further, preparing a graphene film by adopting a direct transfer, film spinning, spraying, dipping, filtering or tiling of a graphene organic suspension, and plating a silicon nitride thin layer by a PECVD method; and preparing the grid line electrode by adopting a screen printing, photoetching or ink-jet mode.
The invention has the beneficial effects that: as can be seen from the above description of the present invention, compared with the prior art, the graphene-silicon-based solar cell of the present invention improves the conversion efficiency of the solar cell by increasing the electrical conductivity through the arrangement of the grid line electrode, but adjusts the size of the potential barrier of the graphene-silicon-based schottky junction through the regulation and control function of the grid line electrode, reduces the charge recombination effect on the silicon surface, and improves the efficiency of carrier separation and transmission, thereby improving the photoelectric conversion efficiency of the cell, and simultaneously solving the problem that the photoelectric conversion efficiency of the existing graphene-silicon-based solar cell is reduced along with the increase of the device size. And the graphene layer is covered with the silicon nitride film layer, so that the effects of antireflection and passivation can be realized, and the graphene layer is protected from pollution and physical damage. And the graphene silicon-based solar cell is simple in structure and preparation process and suitable for batch production.
Drawings
Fig. 1 is a schematic structural diagram of a graphene-silicon-based solar cell according to a preferred embodiment of the present invention;
fig. 2 is a cross-sectional view of a graphene silicon-based solar cell according to a preferred embodiment of the present invention;
fig. 3 is a cross-sectional view of a graphene silicon-based solar cell according to a second preferred embodiment of the present invention;
fig. 4 is a cross-sectional view of a graphene-silicon-based solar cell according to a third preferred embodiment of the present invention.
Reference numerals: 1. a front metal electrode; 2. a back metal electrode; 3. a monocrystalline silicon wafer; 4. a silicon dioxide layer; 5. a graphene film; 6. a silicon nitride film; 7. a gate line electrode; 71. a main grid electrode; 72. the finger electrode.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1 and 2, in a preferred embodiment of the present invention, a graphene silicon-based solar cell includes a front metal electrode 1 and a back metal electrode 2, a monocrystalline silicon wafer 3 is disposed between the front metal electrode 1 and the back metal electrode 2, an annular silicon dioxide layer 4 with a through hole is disposed on the monocrystalline silicon wafer 3, a graphene film 5 and a silicon nitride film 6 are disposed on the surface of the silicon dioxide layer 4 and the surface of the monocrystalline silicon wafer 3 exposed by the through hole of the silicon dioxide layer, a grid line electrode 7 is further disposed on the surface of the monocrystalline silicon wafer exposed by the through hole of the silicon dioxide layer 4, the graphene film 5 and the silicon nitride film 6 are tightly combined with the monocrystalline silicon wafer 4 and the grid line electrode 7, which is different from a conventional PN junction solar cell that the cell conversion efficiency of solar energy is improved by increasing the conductivity by disposing the grid line electrode, but adjusts the size of a potential barrier of a graphene silicon-based schottky junction by the regulation and, the charge recombination effect on the surface of the silicon is reduced, the carrier separation and transmission efficiency is improved, the photoelectric conversion efficiency of the cell is improved, and the problem that the photoelectric conversion efficiency of the existing graphene silicon-based solar cell is reduced along with the increase of the size of the device is solved. And the graphene layer is covered with the silicon nitride film layer, so that the effects of antireflection and passivation can be realized, and the graphene layer is protected from pollution and physical damage. And the graphene silicon-based solar cell is simple in structure and preparation process and suitable for batch production.
As a preferred embodiment of the present invention, it may also have the following additional technical features: the thickness of the silicon nitride film is 80-90nm, the thickness of the graphene film is 1-10nm, the silicon nitride film is plated by a PECVD method, the silicon nitride film can be used as an antireflection film to reduce reflection of incident light, and in the deposition process of the silicon nitride film, hydrogen atoms of reaction products enter the silicon nitride film and the silicon wafer to play a role in passivating defects, so that the quantum efficiency of the graphene silicon solar cell can be greatly improved.
In this embodiment, the monocrystalline silicon wafer includes an N-type monocrystalline silicon wafer or a P-type monocrystalline silicon wafer, and the monocrystalline silicon wafer has a diffusion sheet resistance of 80-100 ohms and a junction depth of 0.2-0.5 μm, so as to improve carrier separation and transmission efficiency, thereby improving photoelectric conversion efficiency of the cell.
In this embodiment, the grid line electrode 7 is wavyThe grid line electrodes comprise main grid line electrodes 71 and auxiliary grid line electrodes 72, the main grid line electrodes 71 and the auxiliary grid line electrodes 72 are arranged in a grid shape in a staggered mode, holes matched with the wavy grid line electrodes are formed in the silicon dioxide layer, and the grid line electrodes are made of Au, Ag, Pt, Ni, ZnO, ITO and TiO2And one or more of nanomaterials thereof.
A preparation method of a graphene silicon-based solar cell sequentially comprises the steps of preparing an annular silicon dioxide layer on the front surface of a monocrystalline silicon piece; preparing a grid line electrode on the surface of the monocrystalline silicon wafer exposed from the through hole of the silicon dioxide layer; preparing a graphene film and a silicon nitride film on the surface of the silicon dioxide layer and the surface of the monocrystalline silicon piece exposed by the through hole of the silicon dioxide layer, so that the graphene film and the silicon nitride film are tightly combined with the monocrystalline silicon piece and the grid line electrode; and preparing a back electrode on the back surface of the monocrystalline silicon wafer.
Preparing a graphene film by adopting a direct transfer, film spinning, spraying, dipping, filtering or graphene organic suspension tiling mode, and plating a silicon nitride thin layer by a PECVD method; and preparing the grid line electrode by adopting a screen printing, photoetching or ink-jet mode.
The following description is made in terms of specific embodiments:
preparation of silicon dioxide SiO on front surface of n-type monocrystalline silicon wafer2Layer, silicon dioxide SiO2Through holes are formed in the layers; the grid line electrode structure is as shown in fig. 1, a plurality of main grid line electrodes are longitudinally arranged, the auxiliary grid line electrodes are transversely arranged, the main grid line electrodes and the auxiliary grid line electrodes are arranged in a staggered grid shape, the grid line electrode structure is engraved on a screen printing plate, photosensitive glue is coated on the screen printing plate, and the electrode structure is engraved on the screen printing plate through a photoetching process; printing Ag paste on an n-type monocrystalline silicon piece exposed from the through hole of the silicon dioxide layer according to the image on the screen printing plate by using a screen printer, and sintering at high temperature to form an Ag electrode; the graphene solution is spread on the silicon dioxide layer and the surface of the n-type monocrystalline silicon piece exposed by the through hole of the silicon dioxide layer by adopting a spraying process, and the graphene film is tightly combined with the n-type monocrystalline silicon piece and the Ag electrode after drying; and plating a silicon nitride thin layer by a PECVD method, wherein the thickness of the silicon nitride thin layer is between 6 and 8 mu m, so that the graphene film layer can be realizedThe graphene layer has the effects of reflection reduction and passivation, and is protected from pollution and physical damage; preparing a metal Al back electrode on the rear surface of the n-type monocrystalline silicon wafer; and a lead is led out from one end of the graphene film to serve as the positive electrode of the battery, and a lead is led out from one end of the back electrode to serve as the negative electrode of the battery.
Example two
As shown in fig. 3, the present embodiment is different from the first embodiment in that: the silicon nitride film 6 is arranged on the monocrystalline silicon piece 3, and the carrier separation and transmission efficiency is lower than that of the first embodiment, so that the improved photoelectric conversion efficiency of the cell is lower than that of the first embodiment.
EXAMPLE III
As shown in fig. 4, the present embodiment is different from the first embodiment in that: the silicon nitride film 6 is arranged on the monocrystalline silicon piece 3 and the graphene film 5, and the carrier separation and transmission efficiency is higher than that of the first embodiment, so that the improved photoelectric conversion efficiency of the cell is higher than that of the first embodiment.
According to the invention, the grid line electrode is arranged to increase the electric conductivity so as to improve the conversion efficiency of the solar cell, but the potential barrier of the graphene silicon-based Schottky junction is adjusted through the regulation and control effect of the grid line electrode, so that the charge recombination effect of the silicon surface is reduced, and the carrier separation and transmission efficiency is improved, thereby improving the photoelectric conversion efficiency of the cell, and simultaneously solving the problem that the photoelectric conversion efficiency of the existing graphene silicon-based solar cell is reduced along with the increase of the size of the device. And the graphene layer is covered with the silicon nitride film layer, so that the effects of antireflection and passivation can be realized, and the graphene layer is protected from pollution and physical damage. And the graphene silicon-based solar cell is simple in structure and preparation process and suitable for batch production.
The above additional technical features can be freely combined and used in superposition by those skilled in the art without conflict.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (10)

1. A graphene silicon-based solar cell, characterized in that: the solar cell comprises a front metal electrode (1) and a back metal electrode (2), wherein a monocrystalline silicon piece (3) is arranged between the front metal electrode (1) and the back metal electrode (2), an annular silicon dioxide layer (4) with a through hole is arranged on the monocrystalline silicon piece (3), a graphene film (5) and a silicon nitride film (6) are arranged on the surface of the silicon dioxide layer (4) and the surface of the monocrystalline silicon piece (3) exposed by the through hole of the silicon dioxide layer (4), a grid line electrode (7) is further arranged on the surface of the monocrystalline silicon piece (3) exposed by the through hole of the silicon dioxide layer (4), and the graphene film (5) and the silicon nitride film (6) are tightly combined with the monocrystalline silicon piece (3) and the grid line electrode (7).
2. The graphene-silicon-based solar cell according to claim 1, wherein: the thickness of the silicon nitride film (6) is 80-90nm, and the thickness of the graphene film (5) is 1-10 nm.
3. The graphene-silicon-based solar cell according to claim 1, wherein: the monocrystalline silicon piece (3) comprises one or more of an N-type monocrystalline silicon piece and a P-type monocrystalline silicon piece.
4. The graphene-silicon-based solar cell according to claim 1, wherein: the diffusion sheet resistance of the monocrystalline silicon piece (3) is 80-100 ohm, and the junction depth is 0.2-0.5 μm.
5. The graphene-silicon-based solar cell according to claim 1, wherein: the grid line electrode (7) is wave-shaped.
6. The graphene-silicon-based solar cell according to claim 5, wherein: the grid line electrodes (7) comprise main grid line electrodes (71) and secondary grid line electrodes (72), and the main grid line electrodes (71) and the secondary grid line electrodes (72) are arranged in a grid shape in a staggered mode.
7. The graphene-silicon-based solar cell according to claim 5, wherein: and holes matched with the wavy grid line electrodes (7) are formed in the silicon dioxide layer (4).
8. The graphene-silicon-based solar cell according to claim 1, wherein: the grid line electrode (7) is made of Au, Ag, Pt, Ni, ZnO, ITO and TiO2And one or more of nanomaterials thereof.
9. A preparation method of a graphene silicon-based solar cell is characterized by comprising the following steps: sequentially preparing an annular silicon dioxide layer (4) on the front surface of a monocrystalline silicon wafer (3); preparing a grid line electrode (7) on the surface of the monocrystalline silicon wafer (3) exposed from the through hole of the silicon dioxide layer (4); preparing a graphene film (5) and a silicon nitride film (6) on the surface of the silicon dioxide layer (4) and the surface of the monocrystalline silicon piece (3) exposed by the through hole of the silicon dioxide layer (4), and enabling the graphene film (5) and the silicon nitride film (6) to be tightly combined with the monocrystalline silicon piece (3) and the grid line electrode (7); and preparing a back electrode on the back surface of the monocrystalline silicon wafer (3).
10. The method for manufacturing a graphene-silicon-based solar cell according to claim 9, wherein: preparing a graphene film (5) by adopting a direct transfer, film spinning, spraying, dipping, filtering or graphene organic suspension tiling mode, and plating a silicon nitride thin layer by a PECVD method; and preparing the grid line electrode (7) by adopting a screen printing, photoetching or ink-jet mode.
CN202110006262.9A 2021-01-05 2021-01-05 Graphene silicon-based solar cell and manufacturing method thereof Pending CN112820782A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097560A (en) * 2010-12-31 2011-06-15 厦门市三安光电科技有限公司 Nitride light emitting diode having composite double current spreading layer
CN102420279A (en) * 2011-11-03 2012-04-18 厦门市三安光电科技有限公司 Gallium nitride based light emitting diode and manufacturing method thereof
CN103840017A (en) * 2014-03-06 2014-06-04 常熟理工学院 Grapheme silicon-based solar cell and manufacture method thereof
US20150357504A1 (en) * 2013-01-30 2015-12-10 Suzhou Institute Of Nano-Tech And Nano-Bionics Of Chinese Academy Of Science Graphene transistor optical detector based on metamaterial structure and application thereof
CN105280744A (en) * 2015-03-04 2016-01-27 常州天合光能有限公司 High-conversion-efficiency potential-induced degradation (PID)-resisting crystalline silicon solar cell and manufacturing method thereof
CN205900557U (en) * 2016-07-29 2017-01-18 常熟理工学院 Silica -based solar cell of spectrum absorption enhancing agent type graphite alkene
CN208368521U (en) * 2018-04-09 2019-01-11 常熟理工学院 Graphene solar battery with micro-cavity structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097560A (en) * 2010-12-31 2011-06-15 厦门市三安光电科技有限公司 Nitride light emitting diode having composite double current spreading layer
CN102420279A (en) * 2011-11-03 2012-04-18 厦门市三安光电科技有限公司 Gallium nitride based light emitting diode and manufacturing method thereof
US20150357504A1 (en) * 2013-01-30 2015-12-10 Suzhou Institute Of Nano-Tech And Nano-Bionics Of Chinese Academy Of Science Graphene transistor optical detector based on metamaterial structure and application thereof
CN103840017A (en) * 2014-03-06 2014-06-04 常熟理工学院 Grapheme silicon-based solar cell and manufacture method thereof
CN105280744A (en) * 2015-03-04 2016-01-27 常州天合光能有限公司 High-conversion-efficiency potential-induced degradation (PID)-resisting crystalline silicon solar cell and manufacturing method thereof
CN205900557U (en) * 2016-07-29 2017-01-18 常熟理工学院 Silica -based solar cell of spectrum absorption enhancing agent type graphite alkene
CN208368521U (en) * 2018-04-09 2019-01-11 常熟理工学院 Graphene solar battery with micro-cavity structure

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Application publication date: 20210518