CN112750889A - Self-aligned pixel definition layer structure and processing method thereof - Google Patents
Self-aligned pixel definition layer structure and processing method thereof Download PDFInfo
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- CN112750889A CN112750889A CN202110239350.3A CN202110239350A CN112750889A CN 112750889 A CN112750889 A CN 112750889A CN 202110239350 A CN202110239350 A CN 202110239350A CN 112750889 A CN112750889 A CN 112750889A
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- 238000003672 processing method Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000001312 dry etching Methods 0.000 claims abstract description 26
- 238000001259 photo etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The invention discloses a self-aligned pixel definition layer structure and a processing method thereof, comprising the following steps: a substrate; the anode is provided with a series of anodes on the substrate, and a gap is reserved between every two adjacent anodes; a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel definition layer is flush with the side wall of the anode; the pixel definition layer is formed by dry etching, does not occupy an anode region, does not influence the opening area, and is favorable for improving the brightness; the method saves a photoetching process, and has simpler process and lower cost.
Description
Technical Field
The invention belongs to the technical field of micro display screens, and particularly relates to a self-aligned pixel definition layer structure and a processing method thereof.
Background
In the display, a Pixel Definition Layer (PDL) is used to define the pixel region, isolate the pixels, and prevent optical and electrical crosstalk.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems: generally, a photoetching and etching process is used, in order to avoid deviation caused by photoetching alignment deviation, a certain overlap (overlap) exists between PDL and an anode, and the size of an overlap area is larger than the alignment precision by at least about 0.2-0.3 um. For microdisplay, since the anode pixel area is small, overlap occupies a part of the light emitting region, which results in loss of about 30% of the aperture area, resulting in reduced light emitting efficiency and reduced brightness.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode which does not occupy an anode region, does not influence the opening area and is beneficial to improving the light-emitting brightness; the self-aligned pixel definition layer structure and the processing method thereof have the advantages of saving a photoetching process, simpler process and lower cost.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a self-aligned pixel definition layer structure having:
a substrate;
the anode is arranged on the substrate, and a gap is reserved between every two adjacent anodes;
a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel defining layer is flush with the side wall of the anode; the pixel defining layer is formed by dry etching.
The pixel defining layer material comprises silicon nitride, silicon oxide or silicon oxynitride.
A processing method of the self-aligned pixel definition layer structure comprises the following steps:
1) preparing an anode on a substrate;
2) depositing a pixel defining layer on the substrate and the anode;
3) dry etching the pixel definition layer, wherein the pixel definition layer on the side wall of the anode is reserved in the dry etching process;
4) and dry-etching and thinning the anode to form a groove for depositing the pixel definition layer, and finally forming an anode structure defined by the pixel definition layer.
One of the technical schemes has the advantages or beneficial effects that the anode area is not occupied, the opening area is not influenced, and the luminous brightness is favorably improved; the method saves a photoetching process, and has simpler process and lower cost.
Drawings
FIG. 1 is a schematic structural diagram of a self-aligned pixel definition layer structure according to an embodiment of the present invention;
FIG. 2 is a flow chart of a process for fabricating the self-aligned pixel definition layer structure of FIG. 1;
the labels in the above figures are: 1. substrate, 2, anode, 3, pixel definition layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Referring to fig. 1-2, a self-aligned pixel defining layer structure has:
a substrate;
the anode is provided with a series of anodes on the substrate, and a gap is reserved between every two adjacent anodes;
a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel definition layer is flush with the side wall of the anode; the pixel defining layer is formed by dry etching.
The pixel defining layer material comprises silicon nitride, silicon oxide or silicon oxynitride.
After the pixel definition layer (silicon nitride, silicon oxide or silicon oxynitride) is deposited, the anode structure is self-aligned, the PDL layer is dry etched, PDL on the side wall of the anode can be reserved due to the dry etching characteristic, then the anode is dry etched to thin the anode, a PDL groove is formed, and finally the anode structure defined by PDL is formed. 1. PDL formed by the self-alignment process does not occupy an anode region, does not affect the opening area, and is beneficial to improving the brightness of illumination. 2. The self-alignment process saves one photoetching process, and is simpler and lower in cost. 3. The self-alignment process is self-aligned by an anode structure without using photoetching, so that the difference among pixels caused by photoetching alignment deviation is avoided, and the uniformity among the pixels is better. The self-aligned pixel definition layer process solves the problem that the traditional pixel definition layer occupies a pixel area and affects the opening area to cause low brightness; the process is complex and the cost is high; the misalignment causes a problem of poor uniformity among pixels.
A processing method of the self-aligned pixel definition layer structure comprises the following steps:
1) preparing an anode on a substrate;
2) depositing a pixel defining layer on the substrate and the anode;
3) dry etching the pixel definition layer, wherein the pixel definition layer on the side wall of the anode is reserved in the dry etching process due to the dry etching characteristic;
4) and dry-etching and thinning the anode to form a groove for depositing the pixel definition layer, and finally forming an anode structure defined by the pixel definition layer.
The step 1) comprises anode deposition, photoetching, etching and stripping, and comprises the following steps:
a) sequentially depositing an ITO (indium tin oxide) -bottom layer, Al and an ITO-top layer by PVD (physical vapor deposition), wherein the thicknesses of the ITO-bottom layer, the Al and the ITO-top layer are respectively 100-500A, 500-2000A and 500-5000A, and the ITO deposition parameters are as follows: ITO target material, pressure 10-1000mT, power 500-; al deposition parameters: al target material, pressure 10-500mT, power 500-;
b) photoetching the anode of a photoetching machine, gluing: 1-5um photoresist, exposure: 100-: developing with developer for 60-300 s;
c) etching the anode by a dry etching machine, wherein dry etching parameters are as follows: pressure 10-100mT, power 100-2The flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 20-200 s;
d) stripping the photoresist by a stripping machine, stripping by stripping liquid for 1000s at 30-80 ℃.
In the step 2), silicon nitride, silicon oxide or silicon oxynitride is deposited by CVD (chemical vapor deposition), the thickness is 500-: pressure 10-100mT, power 200-4Flow rate of 10-200sccm, NH3The flow rate is 10-100sccm, the temperature is 200-; silicon oxide deposition parameters: pressure 10-100mT, power 200-4Flow rate of 10-200sccm, N2The flow rate of O is 10-5000sccm, the temperature is 200-; deposition parameters of silicon oxynitride: pressure 10-100mT, power 200-4Flow rate of 10-200sccm, N2The flow rate of O is 10-400sccm, the temperature is 200-400 ℃, and the time is 10-100 s.
In the step 3), etching silicon nitride, silicon oxide or silicon oxynitride by a dry etching machine to the thickness of 500-; dry etching parameters: pressure 10-100mT, power 100-3Gas flow rate of 10-100sccm, O2The gas flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 100-.
In the step 4), etching and thinning the ITO by a dry etching machine; etching and thinning the top layer ITO 300-3000A, dry etching parameters: pressure 10-100mT, power 100-,Cl2the gas flow is 10-100sccm, the HBr gas flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 20-200 s.
After the scheme is adopted, the anode area is not occupied, the opening area is not influenced, and the improvement of the luminous brightness is facilitated; a photoetching process is saved, the process is simpler, and the cost is lower; the anode structure is self-aligned, photoetching is not used, the difference among pixels caused by photoetching alignment deviation is avoided, and the uniformity among the pixels is better. The problem that the traditional pixel definition layer occupies a pixel area and influences the opening area to cause low brightness is solved; the process is complex and the cost is high; the misalignment causes a problem of poor uniformity among pixels. The display industry, especially the high resolution microdisplay industry.
The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification.
Claims (7)
1. A self-aligned pixel definition layer structure, comprising:
a substrate;
the anode is arranged on the substrate, and a gap is reserved between every two adjacent anodes;
a pixel defining layer filling a gap between adjacent anodes; the side wall of the pixel defining layer is flush with the side wall of the anode; the pixel defining layer is formed by dry etching.
2. The self-aligned pixel definition layer structure of claim 1, wherein the pixel definition layer material comprises silicon nitride, silicon oxide, or silicon oxynitride.
3. A method of processing a self-aligned pixel defining layer structure according to claims 1-2, comprising the steps of:
1) preparing an anode on a substrate;
2) depositing a pixel defining layer on the substrate and the anode;
3) dry etching the pixel definition layer, wherein the pixel definition layer on the side wall of the anode is reserved in the dry etching process;
4) and dry-etching and thinning the anode to form a groove for depositing the pixel definition layer, and finally forming an anode structure defined by the pixel definition layer.
4. The method as claimed in claim 3, wherein the step 1) comprises anodic deposition, photolithography, etching, and stripping, and comprises the steps of:
a) sequentially depositing an ITO-bottom layer, Al and an ITO-top layer by PVD, wherein the thicknesses of the ITO-bottom layer, the Al and the ITO-top layer are respectively 100-500A, 500-2000A and 500-5000A, and the ITO deposition parameters are as follows: ITO target material, pressure 10-1000mT, power 500-; al deposition parameters: al target material, pressure 10-500mT, power 500-;
b) photoetching the anode of a photoetching machine, gluing: 1-5um photoresist, exposure: 100-: developing with developer for 60-300 s;
c) etching the anode by a dry etching machine, wherein dry etching parameters are as follows: pressure 10-100mT, power 100-2The flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 20-200 s;
d) stripping the photoresist by a stripping machine, stripping by stripping liquid for 1000s at 30-80 ℃.
5. The method as claimed in claim 4, wherein in step 2), the CVD deposition of silicon nitride, silicon oxide or silicon oxynitride is performed to a thickness of 500A-: pressure 10-100mT, power 200-4Flow rate of 10-200sccm, NH3The flow rate is 10-100sccm, the temperature is 200-; silicon oxide deposition parameters: pressure 10-100mT, power 200-4Flow rate of 10-200sccm, N2The flow rate of O is 10-5000sccm, the temperature is 200-; nitrogen oxygenSilicon deposition parameters: pressure 10-100mT, power 200-4Flow rate of 10-200sccm, N2The flow rate of O is 10-400sccm, the temperature is 200-400 ℃, and the time is 10-100 s.
6. The method as claimed in claim 5, wherein in step 3), the dry etcher etches silicon nitride, silicon oxide or silicon oxynitride to a thickness of 500-; dry etching parameters: pressure 10-100mT, power 100-3Gas flow rate of 10-100sccm, O2The gas flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 100-.
7. The method for fabricating a self-aligned pixel definition layer according to claim 6, wherein in the step 4), the ITO is etched and thinned by a dry etching machine; etching and thinning the top layer ITO 300-3000A, dry etching parameters: pressure 10-100mT, power 100-2The gas flow is 10-100sccm, the HBr gas flow is 10-100sccm, the temperature is 20-70 ℃, and the time is 20-200 s.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113363407A (en) * | 2021-06-28 | 2021-09-07 | 安徽熙泰智能科技有限公司 | Preparation method of pixel definition layer of silicon-based Micro OLED Micro-display device |
| CN114497430A (en) * | 2022-01-20 | 2022-05-13 | 昆山梦显电子科技有限公司 | Method for preparing anode structure of silicon-based OLED |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979484A (en) * | 2006-12-22 | 2015-10-14 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| CN109301092A (en) * | 2018-08-31 | 2019-02-01 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN110739331A (en) * | 2018-07-19 | 2020-01-31 | 三星显示有限公司 | Display device and method for manufacturing the same |
| CN111799398A (en) * | 2020-07-21 | 2020-10-20 | 京东方科技集团股份有限公司 | Organic light-emitting display panel, manufacturing method thereof and display device |
| CN112436040A (en) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | Simplified preparation method of anode of silicon-based Micro OLED Micro-display device and pixel definition layer |
| CN215069991U (en) * | 2021-03-04 | 2021-12-07 | 安徽熙泰智能科技有限公司 | Self-aligned pixel definition layer structure |
-
2021
- 2021-03-04 CN CN202110239350.3A patent/CN112750889A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979484A (en) * | 2006-12-22 | 2015-10-14 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| CN110739331A (en) * | 2018-07-19 | 2020-01-31 | 三星显示有限公司 | Display device and method for manufacturing the same |
| CN109301092A (en) * | 2018-08-31 | 2019-02-01 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN111799398A (en) * | 2020-07-21 | 2020-10-20 | 京东方科技集团股份有限公司 | Organic light-emitting display panel, manufacturing method thereof and display device |
| CN112436040A (en) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | Simplified preparation method of anode of silicon-based Micro OLED Micro-display device and pixel definition layer |
| CN215069991U (en) * | 2021-03-04 | 2021-12-07 | 安徽熙泰智能科技有限公司 | Self-aligned pixel definition layer structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113363407A (en) * | 2021-06-28 | 2021-09-07 | 安徽熙泰智能科技有限公司 | Preparation method of pixel definition layer of silicon-based Micro OLED Micro-display device |
| CN114497430A (en) * | 2022-01-20 | 2022-05-13 | 昆山梦显电子科技有限公司 | Method for preparing anode structure of silicon-based OLED |
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