CN216749907U

CN216749907U - Structure for improving Micro OLED crosstalk

Info

Publication number: CN216749907U
Application number: CN202220461361.6U
Authority: CN
Inventors: 曹君; 李维维; 李成志; 何靖
Original assignee: Semiconductor Integrated Display Technology Co Ltd
Current assignee: Semiconductor Integrated Display Technology Co Ltd
Priority date: 2022-03-04
Filing date: 2022-03-04
Publication date: 2022-06-14
Anticipated expiration: 2032-03-04

Abstract

The utility model discloses a structure for improving Micro OLED crosstalk, which comprises a substrate, an anode, a pixel definition layer PDL, an OLED film layer and an encapsulation layer, wherein the anode and the pixel definition layer PDL are arranged on the substrate, the anode and the pixel definition layer PDL are positioned between the substrate and the OLED film layer, and the OLED film layer is provided with a film layer opening for cutting the OLED film layer between adjacent pixels to make the OLED film layer discontinuous. The structure for improving the Micro OLED crosstalk is reasonable in design, the OLED film layer between adjacent pixels is etched through a laser etching method, the OLED film layer is discontinuous, so that the transverse current transmission of the organic layer between two adjacent pixels is blocked, the crosstalk effect is reduced, the preparation is simple and convenient, and the cost is low.

Description

Structure for improving Micro OLED crosstalk

Technical Field

The utility model relates to the technical field of Micro OLED display, in particular to a structure for improving Micro OLED crosstalk.

Background

In the micro OLED product, since the pixel size is small, the evaporation of the OLED material cannot be applied to the FMM (fine metal mask), so that the OLED material is entirely evaporated, and thus the organic layers between adjacent pixels are easy to transmit current to each other. The organic material transmits current transversely between adjacent pixels, which causes abnormal light emission of the pixels, thereby causing crosstalk, color cast, color gamut reduction and other problems.

If the transmission path of current between organic layers of adjacent pixels can be blocked, the light crosstalk effect can be reduced, and the effect is generally achieved by breaking an OLED film layer through a special structural design; for example, patent US010651242B2 proposes that an insulating bank is provided on PDL (pixel definition layer) between adjacent pixels to disconnect the OLED film layer, and the structure is complicated and the preparation is cumbersome.

SUMMERY OF THE UTILITY MODEL

Aiming at the defects of the prior art, the utility model provides a structure for improving Micro OLED crosstalk, which can effectively reduce the crosstalk effect and is simple and convenient to prepare.

In order to solve the technical problems, the technical scheme adopted by the utility model is as follows:

this improve structure of Micro OLED cluster light, including base plate, positive pole, pixel definition layer PDL, OLED rete and packaging layer, positive pole and pixel definition layer PDL establish on the base plate, and positive pole and pixel definition layer PDL are located between base plate and the OLED rete, be equipped with on the OLED rete and be used for carving the rete opening that makes the OLED rete discontinuous with the OLED rete between the adjacent pixel.

And further:

and the OLED film layer is provided with a conductive adhesive layer for connecting cathodes of different pixels.

The film layer openings are strip-shaped openings, and the strip-shaped openings in different directions are mutually perpendicular and crossed.

The conductive adhesive layer is positioned between the OLED film layer and the packaging layer.

The thickness of the conductive adhesive layer is 50-500 um.

The outer side of the packaging layer is provided with a yellow light and a module film layer.

Compared with the prior art, the utility model has the following advantages:

the Micro OLED crosstalk improving structure is reasonable in design, the OLED film layer between adjacent pixels is cut through a laser etching method, the OLED film layer is discontinuous in material, transverse current transmission of the organic layer between the two adjacent pixels is blocked, the crosstalk effect is reduced, the preparation is simple and convenient, and the cost is low.

Drawings

The contents of the description and the references in the drawings are briefly described as follows:

FIG. 1 is a schematic diagram of anode preparation.

FIG. 2 is a schematic diagram of PDL preparation.

FIG. 3 is a schematic diagram of OLED film layer preparation.

FIG. 4 is a schematic diagram of a broken OLED film.

FIG. 5 is a schematic view of an opening of an OLED film.

Fig. 6 is a schematic view of the preparation of the conductive adhesive layer.

Fig. 7 is a schematic view of the preparation of the encapsulation film.

FIG. 8 is a schematic view of yellow light and module film preparation.

In the figure:

1. the pixel structure comprises a substrate, 2: an anode, 3: a pixel definition layer PDL, 4: an OLED film layer, 5: a film layer opening, 6: a conductive adhesive layer, 7: an encapsulation layer, 8: OC1 layer, 9: CF layer, 10: OC2 layer and 11: a cover plate.

Detailed Description

The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings.

As shown in fig. 1 to 8, the structure for improving Micro OLED crosstalk includes a substrate 1, an anode 2, a pixel definition layer PDL3, an OLED film layer 4, an encapsulation layer 7, and a yellow light and module film layer; the anode and the pixel definition layer PDL are arranged on the substrate, the anode and the pixel definition layer PDL are located between the substrate and the OLED film layer, and film layer openings 5 used for cutting the OLED film layer between adjacent pixels to enable the OLED film layer to be discontinuous are formed in the OLED film layer.

According to the utility model, the OLED film layer between the adjacent pixels is etched by a laser etching method, so that the material of the OLED layer is discontinuous, the transverse current transmission of the organic layer between the two adjacent pixels is blocked, the crosstalk effect is reduced, the preparation is simple and convenient, and the cost is low.

And the OLED film layer 4 is provided with a conductive adhesive layer 6 for connecting different pixel cathodes. The OLED film layers between adjacent pixels are etched by a laser etching method, so that the evaporated OLED film layers are discontinuous, the continuity of the cathode film layers is damaged, and a whole conductive adhesive layer can be prepared on the cathode to connect the cathodes of different pixels.

The film layer openings are strip-shaped openings, and the strip-shaped openings in different directions are mutually and vertically crossed; the thickness of the conductive adhesive layer is 50-500 um.

The conductive adhesive layer is positioned between the OLED film layer and the packaging layer; the outer side of the packaging layer is provided with a yellow light and module film layer; the yellow light and module film layer comprises an OC1 layer 8, a CF layer 9, an OC2 layer 10 and a cover plate which are arranged in sequence from inside to outside.

The preparation method of the display structure comprises the following steps:

preparing a CMOS drive circuit on a silicon wafer substrate to form a CMOS substrate;

preparing an anode on a CMOS substrate;

preparing a pixel definition layer PDL on the anode by a yellow light process;

preparing OLED film layers (hole injection/transmission layers, organic light-emitting layers, electron injection/transmission layers, cathodes and other film layers) by an evaporation process;

etching the OLED film layer between adjacent pixels through laser etching;

preparing a conductive adhesive layer on the cathode, wherein the conductive adhesive layer is used for conducting the cathodes of different pixels by methods such as spin coating, ink-jet printing and the like, and the thickness of the conductive adhesive is 50-500 um;

preparing a packaging layer, wherein the preparation method comprises but is not limited to ALD, PECVD, IJP and the like, and the structure of the film layer is any combination of one or more of Al2O3, TiO2, ATO, SiN, SiON, SiO, acrylic organic matters, epoxy resin organic matters and the like;

completing the subsequent yellow light and module film layer process.

The above-mentioned features are merely for describing preferred embodiments of the present invention and may be arbitrarily combined to form a plurality of embodiments of the present invention.

The utility model is described above with reference to the accompanying drawings, it is obvious that the specific implementation of the utility model is not limited by the above-mentioned manner, and it is within the scope of the utility model to adopt various insubstantial modifications of the inventive concept and solution, or to apply the inventive concept and solution directly to other applications without modification.

Claims

1. The utility model provides an improve structure of Micro OLED cluster light, includes base plate, anode, pixel definition layer PDL, OLED rete and encapsulation layer, anode and pixel definition layer PDL are established on the base plate, and anode and pixel definition layer PDL are located between base plate and the OLED rete, its characterized in that: and the OLED film layer is provided with film layer openings for cutting the OLED film layer between the adjacent pixels to make the OLED film layer discontinuous.

2. The structure for improving Micro OLED crosstalk according to claim 1, wherein: and the OLED film layer is provided with a conductive adhesive layer for connecting cathodes of different pixels.

3. The structure for improving Micro OLED crosstalk according to claim 1, wherein: the film layer openings are strip-shaped openings, and the strip-shaped openings in different directions are mutually perpendicular and crossed.

4. The structure for improving Micro OLED crosstalk according to claim 2, wherein: the conductive adhesive layer is positioned between the OLED film layer and the packaging layer.

5. The structure for improving Micro OLED crosstalk according to claim 2, wherein: the thickness of the conductive adhesive layer is 50-500 um.

6. The structure for improving Micro OLED crosstalk according to claim 4, wherein: the outer side of the packaging layer is provided with a yellow light and a module film layer.