CN114497430A - Method for preparing anode structure of silicon-based OLED - Google Patents

Method for preparing anode structure of silicon-based OLED Download PDF

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Publication number
CN114497430A
CN114497430A CN202210066242.5A CN202210066242A CN114497430A CN 114497430 A CN114497430 A CN 114497430A CN 202210066242 A CN202210066242 A CN 202210066242A CN 114497430 A CN114497430 A CN 114497430A
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layer
anode
silicon
steps
reflecting layer
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程保龙
周文斌
王卫卫
冯峰
李高敏
孙剑
高裕弟
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Kunshan Mengxian Electronic Technology Co ltd
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Kunshan Mengxian Electronic Technology Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a method for preparing an anode structure of a silicon-based OLED (organic light emitting diode), belonging to the technical field of display. The method for preparing the anode structure of the silicon-based OLED comprises the following steps: the method comprises the following steps: generating an anode reflecting layer on the silicon-based back plate, wherein a gap exists between two adjacent first steps of the anode reflecting layer; step two: generating a pixel limiting layer with a first preset thickness on one side of the anode reflecting layer, which is far away from the silicon-based back plate, wherein the pixel limiting layer fills the gap of the anode reflecting layer and has a thickness exceeding the upper surface of the anode reflecting layer; step three: grinding the surface of the pixel limiting layer through a grinding process to enable the surface of one end, away from the anode reflecting layer, of the pixel limiting layer to be horizontal and not to expose the anode reflecting layer, wherein the overall thickness of the pixel limiting layer is larger than that of the anode reflecting layer, and then patterning and penetrating the pixel limiting layer to form PDL holes, wherein the PDL holes correspond to the first steps; step four: and sequentially manufacturing an organic light-emitting layer, a common cathode layer and a packaging layer which are required by the anode reflecting layer. The pixel limiting layer fills the gap, and the influence of the first step on the common cathode layer is eliminated by the process method, so that the common cathode layer is ensured not to be broken.

Description

Method for preparing anode structure of silicon-based OLED
Technical Field
The invention relates to the technical field of display, in particular to a method for preparing an anode structure of a silicon-based OLED.
Background
Organic Light Emitting Diodes (OLEDs) have been widely used in the display field due to their advantages of high brightness, full viewing angle, fast response speed, flexible display, etc. OLEDs typically include an anode and a cathode disposed opposite each other, and a light-emitting layer disposed between the anode and the cathode.
In the actual OLED production, different anode structures are manufactured according to different requirements to meet the product requirements. The general manufacturing method is to manufacture a metal film as a reflecting layer on a silicon-based back plate of an incoming material by using a sputtering technology, and then manufacture a required anode reflecting layer pattern by using a dry etching process.
In order to meet the requirement of impedance, the film-forming thickness of the anode reflecting layer is correspondingly increased, and the problems of large angle and high step height of the anode reflecting layer occur after etching, so that the step coverage is poor when an organic light-emitting layer and a cathode are evaporated, and the metal impedance of the common cathode layer is increased or broken. Meanwhile, the OLED product shows no bright spots or poor brightness uniformity, and the yield of the OLED product is reduced.
Therefore, it is desirable to provide a method for fabricating an anode structure of a silicon-based OLED to solve the above problems.
Disclosure of Invention
The invention aims to provide a method for preparing an anode structure of a silicon-based OLED, which avoids metal short lines of a common cathode layer and improves the yield of the silicon-based OLED.
In order to realize the purpose, the following technical scheme is provided:
a method for preparing an anode structure of a silicon-based OLED comprises the following steps:
the method comprises the following steps: generating an anode reflecting layer on the silicon-based back plate, wherein a gap exists between two adjacent first steps of the anode reflecting layer;
step two: generating a pixel limiting layer with a first preset thickness on one side of the anode reflecting layer, which is far away from the silicon-based back plate, wherein the pixel limiting layer fills the gap of the anode reflecting layer and has a thickness exceeding the upper surface of the anode reflecting layer;
step three: grinding the surface of the pixel limiting layer to enable one end face, away from the anode reflecting layer, of the pixel limiting layer to be flush, wherein the whole thickness of the pixel limiting layer is larger than that of the anode reflecting layer, PDL holes are formed in the pixel limiting layer in a penetrating mode, and the PDL holes correspond to the first steps;
step four: and sequentially manufacturing an organic light emitting layer, a common cathode layer and a packaging layer which are required by the anode reflecting layer.
As an alternative to the method for preparing the anode structure of the silicon-based OLED, in the first step, a thin film is formed on the silicon-based backplane by using a sputtering technique, and then the first step and the gap of the anode reflective layer are formed by using a yellow light and an etching process.
As an alternative to the method of fabricating the anode structure of the silicon-based OLED, in the second step, a layer of the pixel defining layer is grown on the anode reflective layer using a chemical vapor deposition apparatus.
As an alternative to the method of fabricating the anode structure for a silicon-based OLED, the first predetermined thickness is more than 1.5 times the thickness of the anode reflective layer.
As an alternative to the method of fabricating the anode structure of the silicon-based OLED, in the third step, the upper surface of the pixel defining layer is ground using a chemical mechanical polishing process.
As an alternative to the method of fabricating the anode structure of the silicon-based OLED, in the third step, the PDL hole is fabricated by using a yellow light and etching process.
As an alternative to the method for preparing the anode structure of the silicon-based OLED, the PDL hole is provided in a plurality, and the plurality of PDL holes is provided in one-to-one correspondence with the plurality of first steps.
As an alternative of the method for preparing the anode structure of the silicon-based OLED, the side of the organic light-emitting layer facing the pixel defining layer is provided with a plurality of second steps at intervals, and the second steps are positioned in the PDL holes.
As an alternative of the method for preparing the anode structure of the silicon-based OLED, a plurality of grooves are formed in the side, facing the common cathode layer, of the organic light emitting layer at intervals, a plurality of third steps are formed in the side, facing the organic light emitting layer, of the common cathode layer at intervals, the plurality of third steps are arranged in one-to-one correspondence with the plurality of grooves, and the third steps are located in the grooves.
As an alternative to the method for preparing the anode structure of the silicon-based OLED, in the fourth step, both the organic light emitting layer and the common cathode layer are manufactured by using an evaporation apparatus.
Compared with the prior art, the invention has the beneficial effects that:
according to the method for preparing the anode structure of the silicon-based OLED, the anode reflecting layer is generated on the silicon-based back plate, a plurality of first steps which are mutually spaced are generated after the pattern is added on the anode reflecting layer, and a gap exists between every two adjacent first steps of the anode reflecting layer; generating a pixel limiting layer with a first preset thickness on one side of the anode reflecting layer, which is far away from the silicon-based back plate, wherein the pixel limiting layer fills the gap of the anode reflecting layer and exceeds the upper surface of the anode reflecting layer; grinding the pixel limiting layer to enable one end face, away from the anode reflecting layer, of the pixel limiting layer to be flush, wherein the whole thickness of the pixel limiting layer is larger than that of the anode reflecting layer, PDL holes are formed in the pixel limiting layer in a penetrating mode, and correspond to the first steps; and sequentially manufacturing an organic light emitting layer and a common cathode layer required by the anode reflecting layer. The pixel limiting layer fills the gap and exceeds the upper surface of the anode reflecting layer, so that the influence of the height difference of the first step on the common cathode layer is eliminated, and the common cathode layer is ensured not to be broken; the whole thickness of the pixel limited layer after grinding is greater than the whole thickness of the anode reflecting layer, the pixel limited layer with a certain thickness is reserved to protect the anode reflecting layer, grinding equipment is prevented from corroding the surface of the anode reflecting layer, and the uniformity of the display brightness of the silicon-based OLED is guaranteed.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.
FIG. 1 is a flow chart of a method of fabricating an anode structure for a silicon-based OLED;
FIG. 2 is a schematic view of an assembly of a silicon-based OLED according to an embodiment of the present invention;
FIG. 3 is an exploded view of a silicon-based OLED according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a silicon-based backplane and an anode reflective layer in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram illustrating a pixel defining layer before being polished according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram illustrating a polished pixel defining layer according to an embodiment of the invention.
Reference numerals:
1. a silicon-based backplane; 2. an anode reflective layer; 3. a pixel defining layer; 4. an organic light emitting layer; 5. a common cathode layer; 51. a third step;
21. a first step; 22. a gap;
31. PDL hole;
41. a second step; 42. and (4) a groove.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally placed when the products of the present invention are used, and are used only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements to be referred to must have specific orientations, be constructed in specific orientations, and operate, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should also be noted that, unless otherwise explicitly stated or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; either mechanically or electrically. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In order to meet the requirement of impedance, the film-forming thickness of the anode reflecting layer is correspondingly increased, and the problems of large angle and high step height of the anode reflecting layer occur after etching, so that the coverage is poor when an organic light-emitting layer and a cathode are evaporated, and the impedance of the common cathode metal is increased or broken. Meanwhile, the OLED product shows no bright spots or poor brightness uniformity, and the yield of the OLED product is reduced.
In order to avoid the metal short of the common cathode layer and improve the yield of the silicon-based OLED, the present embodiment provides a method for fabricating an anode structure of the silicon-based OLED, and the details of the present embodiment are described in detail below with reference to fig. 1 to 6.
As shown in fig. 1, the method for preparing the anode structure of the silicon-based OLED comprises the following steps:
the method comprises the following steps: generating an anode reflecting layer 2 on the silicon-based back plate 1, wherein a gap 22 exists between two adjacent first steps 21 of the anode reflecting layer 2, as shown in fig. 4;
step two: generating a pixel defining layer 3 with a first preset thickness on a side of the anode reflecting layer 2 away from the silicon-based back plate 1, wherein the pixel defining layer 3 fills the gap 22 of the anode reflecting layer 2 and has a thickness exceeding the upper surface of the anode reflecting layer 2, as shown in fig. 5;
step three: grinding the pixel limiting layer 3 by a grinding process, so that one end face, away from the anode reflecting layer 2, of the pixel limiting layer 3 is flush with the flat surface and horizontal and cannot expose the anode reflecting layer 2, the whole thickness of the pixel limiting layer 3 is larger than that of the anode reflecting layer 2, a PDL hole 31 is formed in the pixel limiting layer 3 in a patterned penetrating mode, and the PDL hole 31 corresponds to the first step 21, as shown in FIG. 6;
step four: the organic light emitting layer 4, the common cathode layer 5 and the encapsulation layer required for the anode reflective layer 2 are sequentially fabricated as shown in fig. 2.
In short, according to the method for preparing the anode structure of the silicon-based OLED provided by the invention, the anode reflecting layer 2 is generated on the silicon-based back plate 1, a plurality of first steps 21 which are mutually spaced are generated after the pattern is added on the anode reflecting layer 2, and a gap 22 exists between every two adjacent first steps 21 of the anode reflecting layer 2; generating a pixel limiting layer 3 with a first preset thickness on one side of the anode reflecting layer 2, which is far away from the silicon-based back plate 1, wherein the pixel limiting layer 3 fills the gap 22 of the anode reflecting layer 2 and exceeds the upper surface of the anode reflecting layer 2; grinding the pixel limiting layer 3 to make one end face of the pixel limiting layer 3, which is far away from the anode reflection layer 2, flush, wherein the whole thickness of the pixel limiting layer 3 is larger than that of the anode reflection layer 2, a PDL (pixel definition layer) hole 31 penetrates through the pixel limiting layer 3, and the PDL hole 31 corresponds to the first step 21; an organic light-emitting layer 4 and a common cathode layer 5 necessary for the anode reflective layer 2 are sequentially formed. The pixel limiting layer 3 fills the gap 22 and exceeds the upper surface of the anode reflecting layer 2, so that the influence of the height difference of the first step 21 on the common cathode layer 5 is eliminated, and the common cathode layer 5 is prevented from being broken; the whole thickness of the pixel limiting layer 3 after grinding is larger than that of the anode reflecting layer 2, the pixel limiting layer 3 with a certain thickness is reserved to protect the anode reflecting layer 2, and the situation that grinding equipment corrodes the surface of the anode reflecting layer 2 and a silicon-based OLED is prevented from generating Mura. Mura refers to a phenomenon in which the brightness of the display is not uniform, causing various marks.
Further, as shown in fig. 1 and 4, in the first step, a thin film is formed on the silicon-based backplane 1 by using a sputtering technique, and then a plurality of first steps 21 are generated by adding a pattern on the anode reflective layer 2 through a yellow light and etching process, and the first steps 21 and the gaps 22 of the anode reflective layer 2 are formed.
Further, as shown in fig. 1 and 5, in step two, a layer of pixel defining layer 3 is formed on the anode reflective layer 2 by using a Chemical Vapor Deposition (CVD) apparatus.
Further, as shown in fig. 5, the first predetermined thickness is 1.5 times or more the thickness of the anode reflective layer 2. Preferably, the thickness of the pixel defining layer 3 before grinding is between 1.5 and 2 times the thickness of the anode reflective layer 2. After the anode reflective layer 2 is prepared, the thickness of the pixel defining layer 3 is 1.5 times to 2 times of the thickness of the anode reflective layer 2, and the gaps 22 between the anode reflective layers 2 are filled by the thickness of the pixel defining layer 3, so that the step difference is reduced.
Further, as shown in fig. 1, 5 and 6, in step three, the upper surface of the pixel defining layer 3 is polished using a Chemical Mechanical Polishing (CMP) process. Chemical mechanical polishing uses a process that combines mechanical abrasion and chemical etching. Chemical etching-polishing solution: firstly, oxidizing agent and catalyst in polishing solution between the surface of a workpiece and a polishing pad are equal to the surface material of the workpiece to carry out chemical reaction, and a layer of chemical reaction film is generated on the surface of the workpiece; mechanical rubbing-polishing pad: then the abrasive particles in the polishing liquid and the polishing pad made of the high polymer material remove the layer of chemical reaction film through mechanical action to expose the surface of the workpiece again, and then the chemical reaction is carried out. The whole process is carried out by alternately carrying out chemical action and mechanical action, and finally the polishing of the surface of the workpiece is finished. The thickness of grinding pixel limiting layer 3 needs to reserve the next process of carrying on of certain thickness, uses some materials can corrode anode reflecting layer 2 mainly in CMP process equipment grinding process, leads to the product to appear Mura, reserves the inorganic film of certain thickness pixel limiting layer 3 and is the protection anode reflecting layer 2 surface, avoids the product Mura to appear.
Further, as shown in fig. 1 and 6, in step three, the PDL hole 31 is made using a yellow light and etching process.
Further, the PDL holes 31 are provided in plural, and the plural PDL holes 31 are provided in one-to-one correspondence with the plural first steps 21.
Further, as shown in fig. 2 and 3, the side of the organic light emitting layer 4 facing the pixel defining layer 3 is provided with a plurality of second steps 41 at intervals, and the second steps 41 are located in the PDL holes 31. The plurality of second steps 41 are additionally arranged on the organic light-emitting layer 4 at intervals, so that the surface of one side surface of the organic light-emitting layer 4 facing the pixel limiting layer 3 is roughened, the attaching area of the organic light-emitting layer 4 and the pixel limiting layer 3 is increased, and the organic light-emitting layer 4 and the pixel limiting layer 3 are firmly connected.
Further, as shown in fig. 2 and 3, a plurality of grooves 42 are disposed at intervals on one side of the organic light emitting layer 4 facing the common cathode layer 5, a plurality of third steps 51 are disposed at intervals on one side of the common cathode layer 5 facing the organic light emitting layer 4, the plurality of third steps 51 are disposed in one-to-one correspondence with the plurality of grooves 42, and the third steps 51 are located in the grooves 42. Through set up a plurality of recesses 42 at the interval on organic luminescent layer 4, set up a plurality of third steps 51 at the interval on common cathode layer 5, make third step 51 insert in recess 42, increased organic luminescent layer 4 and common cathode layer 5's laminating area, guarantee organic luminescent layer 4 and common cathode layer 5 firm in connection.
Further, in the fourth step, the organic light emitting layer 4 and the common cathode layer 5 are both manufactured by using an evaporation apparatus.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (10)

1. A method for preparing an anode structure of a silicon-based OLED is characterized by comprising the following steps:
the method comprises the following steps: generating an anode reflecting layer (2) on the silicon-based back plate (1), wherein a gap (22) exists between two adjacent first steps (21) of the anode reflecting layer (2);
step two: generating a pixel defining layer (3) with a first preset thickness on the side of the anode reflecting layer (2) facing away from the silicon-based back plate (1), wherein the pixel defining layer (3) fills the gap (22) of the anode reflecting layer (2) and has a thickness exceeding the upper surface of the anode reflecting layer (2);
step three: grinding the surface of the pixel limiting layer (3) to enable one end face, away from the anode reflecting layer (2), of the pixel limiting layer (3) to be flush, wherein the overall thickness of the pixel limiting layer (3) is larger than that of the anode reflecting layer (2), a PDL (PDL) hole (31) is formed in the pixel limiting layer (3) in a penetrating mode, and the PDL hole (31) corresponds to the first step (21);
step four: and sequentially manufacturing an organic light-emitting layer (4), a common cathode layer (5) and a packaging layer which are required by the anode reflecting layer (2).
2. The method for preparing an anode structure of a silicon-based OLED as claimed in claim 1, wherein in the first step, a thin film is formed on the silicon-based backplate (1) by a sputtering technique, and then the first step (21) and the gap (22) of the anode reflective layer (2) are formed by a yellow light and etching process.
3. The method for preparing an anode structure of a silicon-based OLED according to claim 1, wherein in step two, a layer of the pixel defining layer (3) is grown on the anode reflective layer (2) using a chemical vapor deposition apparatus.
4. The method for fabricating an anode structure for a silicon-based OLED according to claim 3, wherein the first predetermined thickness is more than 1.5 times the thickness of the anode reflective layer (2).
5. The method for fabricating an anode structure of a silicon-based OLED according to claim 1, wherein in the third step, the upper surface of the pixel defining layer (3) is polished by a chemical mechanical polishing process.
6. The method for fabricating an anode structure of a silicon-based OLED as claimed in claim 5, wherein in the third step, the PDL hole (31) is fabricated by using a yellow light and etching process.
7. The method for preparing an anode structure of a silicon-based OLED as claimed in claim 6, wherein the PDL hole (31) is provided in plurality, and a plurality of PDL holes (31) are provided in one-to-one correspondence with a plurality of the first steps (21).
8. The method for preparing an anode structure of a silicon-based OLED according to claim 2, wherein the side of the organic light emitting layer (4) facing the pixel defining layer (3) is provided with a plurality of second steps (41) at intervals, and the second steps (41) are located in the PDL hole (31).
9. The method for preparing the anode structure of the silicon-based OLED according to claim 8, wherein a plurality of grooves (42) are formed at intervals on one side of the organic light emitting layer (4) facing the common cathode layer (5), a plurality of third steps (51) are formed at intervals on one side of the common cathode layer (5) facing the organic light emitting layer (4), the plurality of third steps (51) are arranged in one-to-one correspondence with the plurality of grooves (42), and the third steps (51) are located in the grooves (42).
10. The method for preparing an anode structure of a silicon-based OLED as claimed in claim 2, wherein in the fourth step, the organic light emitting layer (4) and the common cathode layer (5) are both fabricated by using an evaporation apparatus.
CN202210066242.5A 2022-01-20 2022-01-20 Method for preparing anode structure of silicon-based OLED Pending CN114497430A (en)

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CN113299543A (en) * 2021-05-21 2021-08-24 安徽熙泰智能科技有限公司 Organic pixel definition layer of silicon-based Micro OLED Micro-display device and preparation method thereof
CN113540389A (en) * 2021-07-19 2021-10-22 昆山梦显电子科技有限公司 Preparation method of OLED anode
CN113793908A (en) * 2021-09-08 2021-12-14 南京国兆光电科技有限公司 Silicon-based active matrix organic light-emitting display and manufacturing method thereof

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