CN113299543A - Organic pixel definition layer of silicon-based Micro OLED Micro-display device and preparation method thereof - Google Patents
Organic pixel definition layer of silicon-based Micro OLED Micro-display device and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000011161 development Methods 0.000 claims description 26
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000002159 abnormal effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 3
- 230000009194 climbing Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 16
- 238000000137 annealing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The invention provides a preparation method of an organic pixel definition layer of a silicon-based Micro OLED Micro-display device, which comprises the following steps: 1) coating organic glue on the wafer which is subjected to the anode process to obtain a substrate 1; 2) developing the substrate 1, and removing the organic glue on the anode to obtain a substrate 2; 3) curing the substrate 2. PDL can be filled between anodes and is slightly lower than the height of the anodes, the structure can reduce the section difference between the anodes, so that the subsequent cathode manufacturing process has no climbing requirement between the anode gaps, the phenomenon that the cathodes are not cracked at the anodes is avoided, the abnormal dark spots of products are avoided, and the abnormal trouble of the conventional process is improved; in addition, PDL is arranged between the anodes in the process, so the line width limit can be controlled to be less than 0.5 mu m and lower than the height of the anodes, the effective light-emitting area is not influenced, and the product can meet the requirements of high brightness and high PPI; the process is simple, the required reagent is less, and the production cost is greatly reduced.
Description
Technical Field
The invention belongs to the field of silicon-based Micro OLED Micro display, and particularly relates to an organic pixel defining layer of a silicon-based Micro OLED Micro display device and a preparation method thereof.
Background
At present, in the era of 5G ultra wide band and everything intelligent union, AR and VR are the best terminals which consume flow undoubtedly and widen services. With the continuous layout and investment of the science and technology at home and abroad in the aspect and the guidance of policies, the virtual reality technology reaches the air opening. The key point of the virtual reality technology is the development and progress of the near-eye display technology, and the technical research and development of the Micro OLED Micro display device as the near-eye display screen also becomes the current key point.
In the following, the PDL (pixel definition layer) of the conventional silicon-based Micro OLED device is an inorganic material, and is obtained by a plasma enhanced chemical vapor deposition film forming → photoresist coating → exposure → development → curing → dry etching → wet photoresist removal process, and the PDL structure obtained by the process cannot solve the problems of large anode step difference and overlarge PDL edge angle, and in the subsequent process, a slope fracture phenomenon is easily generated between the anodes of the cathodes, resulting in large yield loss (yield loss > 90%).
Disclosure of Invention
The invention aims to provide an organic pixel definition layer of a silicon-based Micro OLED Micro display device and a preparation method thereof, wherein the pixel definition layer is made of organic materials, PDL can be prepared by organic glue coating, over-development and curing, the preparation process is simple, the line width limit can be controlled to be less than 0.5 mu m, the PDL is slightly lower than the height of an anode, the requirements of high brightness and high PPI of a product can be met, and the production cost is greatly reduced.
The specific technical scheme of the invention is as follows:
a preparation method of an organic pixel definition layer of a silicon-based Micro OLED Micro-display device comprises the following steps:
1) coating organic glue on the wafer which is subjected to the anode process to obtain a substrate 1;
2) developing the substrate 1, and removing the organic glue of the anode to obtain a substrate 2;
3) curing the substrate 2.
In the step 1), the wafer is a wafer with a CMOS circuit and an anode process is finished;
the step 1) is specifically as follows: and (3) carrying out organic glue spin coating on the wafer subjected to the anode process, adopting dynamic glue dripping, controlling the rotating speed to be 2500rpm-3000rpm, and controlling the film thickness of the organic glue on the anode to be 0.4-0.5 μm, wherein the thickness is beneficial to subsequent over-development operation. The glue amount of the 8inch wafer is controlled to be 3cc-5 cc. The invention controls the spin coating speed, is beneficial to leveling the organic glue, can better fill the gap between the organic glue and the anode, and can control the thickness of the film layer. The organic glue can be better leveled above the anode by controlling the parameters; after the organic glue is coated, the surface of the obtained substrate 1 is flat. The thickness of the organic glue above the anode can be controlled, and the subsequent over-development process can be matched, so that the insufficient development and the excessive development abnormity can be avoided.
The organic glue is polyimide organic glue, preferably photosensitive polyimide, so that the requirement of direct development can be met, and the leveling property is excellent; the photosensitive polyimide is selected from Tollipw photosensitive polyimide; on one hand, the organic glue can be kept in the product as a functional layer, and the abnormity of outgas and the like can not be generated. In addition. The organic glue has high resolution and excellent CD uniformity and leveling property; and the organic glue is cured at high temperature, so that the water vapor removal effect is excellent, and the annealing process (the annealing temperature needs high temperature) of the anode section can be completed at the same time, so that the previous annealing process of a prototype can be saved.
In the anode process in the step 1), the prepared anodes are arranged on the wafer at intervals, and preferably, the distance between the anodes is less than 0.5 mu m;
step 1) when the organic glue is coated, the organic glue is filled in the anode gap, and the organic glue is also coated on the surface of the anode, so that the organic glue has a certain thickness of 0.4-0.5 μm on the anode. The anode gap and the glue on the anode are flat because of the good leveling of the organic glue.
The step 2) is specifically as follows: TMAH solution with the mass concentration of 2.5 +/-0.05% is selected for the over-development; the developing time is 75s +/-5 s; the invention controls the concentration and time of developing, mainly the matching method of developing concentration, developing time and film thickness of organic glue; the invention can prepare the structure meeting the requirements only by adopting the over-development. The developing solution with the concentration and the developing time can not damage the anode.
TMAH solution TMAH concentration and developing time need to be matched for use, high concentration is matched with low developing time, low concentration is matched with high developing time, and excessive damage or insufficient development to organic PDL between anodes is avoided; the invention adopts the concentration of 2.5 +/-0.05 percent to be beneficial to over-display operation.
And 2) after the developing treatment, removing the organic glue on the surface of the anode, wherein the thickness of the organic glue in the anode gap and the segment difference of the anode are 0-10nm and slightly lower than the thickness of the anode. Only if the thickness is slightly lower than the height of the anode after the over-development, 100% of the organic glue above the anode can be removed. The conventional development is patterning, the over development of the invention is compared with the conventional development, after the conventional development, the organic glue is overlapped above the anode and is not completely lower than the anode, and the thickness of the organic glue in the gap of the anode after the over development of the invention is slightly lower than that of the anode.
In the step 3), the main curing temperature is selected to be 295 +/-5 ℃, and the main curing time is selected to be 25min +/-5 min. And obtaining the required pattern after the curing is finished.
The organic pixel definition layer of the silicon-based Micro OLED Micro display device is prepared by the method. In the preparation process, the PDL of the pixel definition layer is arranged between the gaps of the anode, and the line width of the pixel definition layer of the structure is the same as the gap width of the anode and can be changed along with the width change of the anode. The line width limit can be less than 0.5 μm, and the segment difference with the anode is 0-10 nm. Since the current PDL process is limited, it cannot be prepared with too small an anode line width, and conventionally can only be prepared with an anode pitch > 0.5 μm. The PDL of the invention can be prepared when the anode is less than 0.5 μm, even less than 0.3 μm.
The invention provides a preparation method of an organic PDL of a silicon-based Micro OLED Micro-display device; PDL is an organic material, so that a film can be formed by adopting a coating mode, and the main process can be optimized to three steps, namely organic glue coating → over development → solidification, so that the preparation of PDL can be completed. The method is used in the PDL process, because the PDL adopts the organic glue, the thickness of the organic glue can be controlled by adopting the over-development, and the PDL thickness is controlled to be lower than that of the anode by adopting the over-development.
In the prior art, PDL is lapped above the anode and is higher than the anode, and the PDL can be filled between the anodes to enable the whole structure to be close to the same horizontal plane, so that the effect of reducing the anode section difference can be achieved. The anode segment difference refers to the distance difference between the anode surface and the bottom of the anode gap, if the segment difference is large, the film layer will be broken due to the large segment difference in the subsequent evaporation process
PDL can be filled between anodes and is slightly lower than the height of the anodes, the structure can reduce the section difference between the anodes, so that the subsequent cathode manufacturing process has no climbing requirement between the anode gaps, the phenomenon that the cathodes are not cracked at the anodes is avoided, the abnormal dark spots of products are avoided, and the abnormal trouble of the conventional process is improved; in addition, PDL is arranged between the anodes in the process, so the line width limit can be controlled to be less than 0.5 mu m and lower than the height of the anodes, the effective light-emitting area is not influenced, and the product can meet the requirements of high brightness and high PPI; the process is simple, the required reagent is less, and the production cost is greatly reduced.
Drawings
FIG. 1 is a schematic structural view of a substrate 1;
FIG. 2 is a schematic structural diagram of a product of the present invention;
FIG. 3 is an SEM photograph (taken at 2 μm) of a product of example 1 of the present invention;
in the figure, 1 is a wafer, 2 is an anode, and 3 is an organic glue.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Test materials, reagents and the like used in the following examples are commercially available unless otherwise specified.
The specific techniques or conditions not specified in the examples can be performed according to the techniques or conditions described in the literature in the field or according to the product specification.
Example 1
A preparation method of an organic pixel definition layer of a silicon-based Micro OLED Micro-display device comprises the following steps:
1) carrying out organic glue coating operation on wafer 1 with a CMOS circuit and an anode process, wherein anodes 2 are arranged at intervals on the wafer 1, the anode interval is 0.255 mu m, the organic glue is coated by adopting a Dongli PW photosensitive polyimide line spin coating mode, dynamic glue dripping is adopted, the rotating speed is controlled at 2600rpm, the glue amount of 8inch wafer is controlled at 5cc, organic glue 3 is filled in the anode interval, and the film thickness of the organic glue on the anode is 0.50 mu m; the surface of the coated organic glue is flat, so that a substrate 1 is obtained, and the structure is shown in figure 1;
2) carrying out development operation on the substrate 1 which is subjected to the organic glue coating operation, wherein TMAH solution with the mass concentration of 2.5% is selected for development, and the development time is 75 s; removing the organic glue on the surface of the anode, wherein the height of the organic glue between the anodes is slightly lower than that of the anode, and obtaining a substrate 2;
3) and curing the substrate 2 which is subjected to the developing operation, wherein the main curing temperature is 295 ℃, and the main curing time is 25 min. The structure of the obtained product is schematically shown in fig. 2, the anodes 2 are arranged at intervals on the wafer 1, and a pixel definition layer formed by the organic glue 3 with a height slightly lower than that of the anodes 2 is arranged between the intervals of the anodes 2.
The SEM image of the product prepared in example 1 is shown in fig. 3; the thickness of the anode before preparation is 109.7nm, the segment difference between the anodes is 215.3nm, after the process is completed, PDL fills the gap between the anodes, the segment difference with the anode is 6.6nm, the lap joint angles with the anode are all smaller than 60 degrees, the segment difference is reduced, and the subsequent cathode film layer is prevented from being broken due to overlarge segment difference.
The prior art is as follows: PDL structure is formed by inorganic material, and the preparation process is plasma enhanced chemical vapor deposition film forming → photoresist coating → exposure → development → curing → dry etching → wet glue removal; the process can meet the requirement that the line width of PDL is less than 1 mu m, but 7 main process steps need to be completed in a single PDL process, the problem of poor anode interval cannot be solved by the completed PDL, and the defect that the product reject ratio is high due to abnormal cathode breakage cannot be avoided.
The preparation method of the inorganic PLD provided by the invention can obtain the target structure through organic glue coating → over developing → curing, and on one hand, the preparation method can solve the process problems, on the other hand, the preparation method can reduce the process number and save the cost.
Comparative example 1
The method for preparing the organic pixel defining layer of the silicon-based Micro OLED Micro display device is different from the embodiment in that the developing time is 65s, the developing is not clean due to insufficient developing time, and organic glue is remained above an anode.
Comparative example 2
The difference between the preparation method of the organic pixel defining layer of the silicon-based Micro OLED Micro display device and the embodiment is that the developing time is 85s, the developing time is too long, the organic glue is too lower than the anode, and the effect of reducing the step difference cannot be achieved.
Claims (10)
1. A preparation method of an organic pixel definition layer of a silicon-based Micro OLED Micro-display device is characterized by comprising the following steps:
1) coating organic glue on the wafer which is subjected to the anode process to obtain a substrate 1;
2) developing the substrate 1, and removing the organic glue of the anode to obtain a substrate 2;
3) curing the substrate 2.
2. The preparation method according to claim 1, wherein step 1) is specifically: and (3) carrying out organic glue spin coating on the wafer which is subjected to the anode process, adopting dynamic glue dripping, and controlling the rotating speed to be 2500-3000 rpm.
3. The method according to claim 1 or 2, wherein the organic glue in step 1) has a film thickness of 0.4 μm to 0.5 μm on the anode.
4. The method according to claim 1 or 2, wherein the anode spacing in step 1) is set on the wafer, and the anode spacing distance is less than 0.5 μm.
5. The method according to claim 1 or 2, wherein the organic glue in step 1) is a photosensitive polyimide.
6. The method according to claim 1 or 2, wherein the organic glue in step 1) is Tollipsew photosensitive polyimide.
7. The preparation method according to claim 1 or 2, wherein step 2) is specifically: TMAH solution with the mass concentration of 2.5 +/-0.05% is selected for the over-development; the development time was 75 s. + -.5 s.
8. The method according to claim 1 or 2, wherein in step 3), the main curing temperature is selected to be 295 ℃ ± 5 ℃ and the main curing time is selected to be 25min ± 5 min.
9. A silicon-based Micro OLED Micro-display device organic pixel definition layer prepared by the preparation method of any one of claims 1 to 8.
10. A silicon-based Micro OLED Micro-display device organic pixel definition layer according to claim 9, wherein the pixel definition layer is between anodes with line width limit < 0.5 μm and anode step difference < 0-10 nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497430A (en) * | 2022-01-20 | 2022-05-13 | 昆山梦显电子科技有限公司 | Method for preparing anode structure of silicon-based OLED |
| CN115440921A (en) * | 2022-09-28 | 2022-12-06 | 安徽熙泰智能科技有限公司 | Micro OLED Micro-display device pixel definition layer and preparation method thereof |
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