CN105527801B - A kind of patterning method of film layer, substrate and preparation method thereof, display device - Google Patents
A kind of patterning method of film layer, substrate and preparation method thereof, display device Download PDFInfo
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- CN105527801B CN105527801B CN201610125151.9A CN201610125151A CN105527801B CN 105527801 B CN105527801 B CN 105527801B CN 201610125151 A CN201610125151 A CN 201610125151A CN 105527801 B CN105527801 B CN 105527801B
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- 239000000758 substrate Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000000059 patterning Methods 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000011161 development Methods 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 19
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 68
- 238000005530 etching Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 138
- 239000011159 matrix material Substances 0.000 description 29
- 230000003111 delayed effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000011165 process development Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Filters (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of patterning method of film layer, substrate and preparation method thereof, display device, the substrate to make high-res in the case where that need not buy new mask plate reduces production cost.The patterning method of film layer includes：Tunic layer is formed on underlay substrate, film layer is exposed；Film layer after exposure is developed, the film layer tentatively patterned is formed；The control development duration in developing process so that the film layer tentatively patterned forms the breach concaved in the side contacted with underlay substrate；Toasted after being carried out to the underlay substrate for completing above-mentioned steps under preset temperature, film layer at breach top position is collapsed so that the film layer formation tentatively patterned includes being located at the film layer of the second thickness at the film layer of the first thickness at collapse position and non-collapsed position；Remove the film layer of first thickness, the film layer patterned.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of patterning method of film layer, substrate and preparation method thereof,
Display device.
Background technology
Liquid crystal display panel includes the array base palte and color membrane substrates being oppositely arranged, and positioned at array base palte and color film base
Pair liquid crystal layer between plate, the array base palte structure such as including grid generally makes to be formed using patterning processes when making grid, i.e.,
The metal level of the grid of deposition forms grid after being patterned；The color membrane substrates structure such as including black matrix, when making black matrix
Generally also make to be formed using patterning processes, i.e., form black matrix after being patterned to the film layer of the black matrix of coating.
Prior art needs to use when patterning the metal level for forming grid and the film layer for forming black matrix etc.
Mask plate, illustrates so that the film layer to forming black matrix is patterned as an example, one layer of shape is coated first on underlay substrate
Into the film layer of black matrix, then the film layer is exposed using mask plate, finally the film layer after exposure developed, in lining
The black matrix 11 patterned on substrate 10, is obtained as shown in figure 1, being measured to the width of the pattern of black matrix 11,
The pattern width of the black matrix 11 obtained after the mask plate exposure for using prior art is 6 μm.
After being patterned using the film layer in the mask plate array substrate and/or color membrane substrates of prior art, make
The resolution of display panel be 400, the display panel to make more high-res then needs to buy new mask plate, adopted
It is exposed with the film layer on new mask plate array substrate and/or color membrane substrates, and the film layer after exposure is developed
The width of the pattern formed afterwards is necessarily less than 6 μm, formed by pattern the smaller mask plate of width price it is higher.
In summary, prior art to make the display panel of more high-res production cost it is higher.
The content of the invention
The embodiments of the invention provide a kind of patterning method of film layer, substrate and preparation method thereof, display device, it is used to
The substrate of high-res is made in the case where new mask plate need not be bought, production cost is reduced.
A kind of patterning method of film layer provided in an embodiment of the present invention, methods described includes：
Tunic layer is formed on underlay substrate, the film layer is exposed；
The film layer after exposure is developed, the film layer tentatively patterned is formed；Development is controlled in developing process
Duration so that the film layer tentatively patterned forms the breach concaved in the side contacted with the underlay substrate；
Toasted after being carried out to the underlay substrate for completing above-mentioned steps under preset temperature, the film at the breach top position
Layer is collapsed so that the film layer formation tentatively patterned includes being located at the film layer of the first thickness at collapse position and non-
The film layer of second thickness at collapse position；
Remove the film layer of first thickness, the film layer patterned.
By the patterning method of film layer provided in an embodiment of the present invention, this method forms the film tentatively patterned after development
Layer, the film layer tentatively patterned forms the breach concaved in the side contacted with underlay substrate, and after rear baking, preliminary figure
The film layer formation of case includes being located at the film of the second thickness at the film layer of the first thickness at collapse position and non-collapsed position
Layer, removes the film layer of first thickness afterwards, the film layer patterned, compared with the patterning method of prior art film layer, energy
It is enough to realize finer pattern, improve resolution；Further, since in the patterning process of film layer provided in an embodiment of the present invention
New mask plate need not be bought, therefore, it is possible to reduce production cost.
It is preferred that the breach is symmetrical on the central axis of the film layer tentatively patterned.
It is preferred that the film layer of the first thickness is symmetrical on the central axis of the film layer tentatively patterned.
The embodiment of the present invention additionally provides a kind of patterning method of film layer, and methods described includes：
Tunic layer is formed on underlay substrate, photoresist is coated in the film layer, the photoresist is exposed；
The photoresist after exposure is developed, the photoresist tentatively patterned is formed；Controlled in developing process
Develop duration so that the photoresist tentatively patterned forms the breach concaved in the side contacted with the film layer；
Toasted after being carried out to the underlay substrate for completing above-mentioned steps under preset temperature, the light at the breach top position
Photoresist is collapsed so that the photoresist formation tentatively patterned includes the photoetching for being located at the first thickness at collapse position
The photoresist of second thickness at glue and non-collapsed position；
Remove the photoresist of first thickness, the photoresist patterned；
The film layer not covered on underlay substrate by the photoresist of the patterning is performed etching, and removed remaining
Photoresist, the film layer patterned.
By the patterning method of film layer provided in an embodiment of the present invention, this method forms the light tentatively patterned after development
Photoresist, the photoresist tentatively patterned forms the breach concaved in the side contacted with film layer, and after rear baking, preliminary figure
The photoresist formation of case includes being located at the second thickness at the photoresist of the first thickness at collapse position and non-collapsed position
Photoresist, remove the photoresist of first thickness afterwards, the photoresist patterned, the finally photoresist to not being patterned
The film layer of covering is performed etching, the film layer patterned, compared with the patterning method of prior art film layer, due to etching it
The area of the overlay area of preceding photoresist reduces, and causes the size of the film layer of the patterning obtained after etching to reduce, i.e., can be real
Now finer pattern, improves resolution；Further, since being not required in the patterning process of film layer provided in an embodiment of the present invention
New mask plate is bought, therefore, it is possible to reduce production cost.
It is preferred that the breach is symmetrical on the central axis of the photoresist tentatively patterned.
It is preferred that the photoresist of the first thickness symmetrically divides on the central axis of the photoresist tentatively patterned
Cloth.
The embodiment of the present invention additionally provides a kind of preparation method of substrate, wherein, at least one layer of film layer on the substrate
Made using the patterning method of above-mentioned film layer.
It is preferred that the substrate is array base palte or color membrane substrates.
The embodiment of the present invention additionally provides a kind of substrate, and the substrate is made using the preparation method of above-mentioned substrate.
The embodiment of the present invention additionally provides a kind of display device, and the display device includes above-mentioned substrate.
Brief description of the drawings
Fig. 1 is the structural representation of the black matrix of patterning formed after film pattern of the prior art to forming black matrix
Figure；
Fig. 2 is a kind of patterning method flow chart of film layer provided in an embodiment of the present invention；
Fig. 3 for it is provided in an embodiment of the present invention to formed black matrix film pattern during the film layer is exposed
When structural representation；
Fig. 4 for it is provided in an embodiment of the present invention to formed black matrix film pattern during the film layer is developed
Structural representation afterwards；
Fig. 5 for it is provided in an embodiment of the present invention to formed black matrix film pattern during the film layer is developed
Scanning electron microscope diagram piece afterwards；
Fig. 6 is baking after being carried out during the film pattern provided in an embodiment of the present invention to forming black matrix to the film layer
Structural representation after roasting；
Fig. 7 is baking after being carried out during the film pattern provided in an embodiment of the present invention to forming black matrix to the film layer
Scanning electron microscope diagram piece after roasting；
Fig. 8 is the black matrix of the patterning obtained after the film pattern provided in an embodiment of the present invention to forming black matrix
Structural representation；
Fig. 9 is the patterning method flow chart of another film layer provided in an embodiment of the present invention；
In the various process that Figure 10-Figure 13 is patterned for the patterning method using the film layer shown in Fig. 9 to film layer
Film layer structural representation.
Embodiment
The embodiments of the invention provide a kind of patterning method of film layer, substrate and preparation method thereof, display device, it is used to
The substrate of high-res is made in the case where new mask plate need not be bought, production cost is reduced.
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing the present invention is made into
One step it is described in detail, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole implementation
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
All other embodiment, belongs to the scope of protection of the invention.
The patterning method of the film layer of specific embodiment of the invention offer is provided below in conjunction with the accompanying drawings.
Each thicknesses of layers and area size, shape do not react the actual proportions of each film layer in accompanying drawing, and purpose is that signal is said
Bright present invention.
As shown in Fig. 2 the specific embodiment of the invention provides a kind of patterning method of film layer, including：
S201, tunic layer is formed on underlay substrate, the film layer is exposed；
S202, the film layer after exposure is developed, form the film layer tentatively patterned；Controlled in developing process
Develop duration so that the film layer tentatively patterned forms the breach concaved in the side contacted with the underlay substrate；
S203, the underlay substrate to completion above-mentioned steps are toasted after being carried out under preset temperature, the breach top position
The film layer at place is collapsed so that the film layer formation tentatively patterned includes being located at the film of the first thickness at collapse position
The film layer of second thickness at layer and non-collapsed position；
S204, the film layer for removing first thickness, the film layer patterned.
Illustrated below so that the film layer to forming black matrix is patterned as an example.
As shown in figure 3, first, the film layer 30 of one layer of formation black matrix is made on underlay substrate 10, film layer 30 can be adopted
It is produced on underlay substrate 10, the specific preparation method of film layer 30 is same as the prior art, is no longer gone to live in the household of one's in-laws on getting married here with the mode of coating
State.Underlay substrate 10 in the specific embodiment of the invention is glass substrate or is flexible base board, here tool not to underlay substrate
Body material is limited.
Then, film layer 30 is exposed using mask plate, the dotted arrow in Fig. 3 represents the light in exposure process
The direction of propagation, the mask plate that the specific embodiment of the invention is used in exposure is identical with the mask plate of prior art, the tool of exposure
Body process is also same as the prior art, repeats no more here.
As shown in figure 4, then developing to the film layer 30 after exposure, the film layer 300 tentatively patterned is formed, in development
During control development duration so that the film layer 300 tentatively patterned contact with underlay substrate 10 side formation concave
Breach 40.
When it is implemented, used in the specific embodiment of the invention in developing process development when a length of conventional development duration with
Delayed filling duration sum, development duration when conventional development duration develops with prior art is equal, delayed filling duration according to
Practical condition is configured, when it is implemented, a length of 30 seconds to 50 seconds during delayed filling in the specific embodiment of the invention.
The specific embodiment of the invention is when the film layer after to exposure is developed, and the specific method of development is same as the prior art, different
Be that on the basis of prior art developing time, developing time has been carried out to appropriate extension.
Preferably, as shown in figure 4, specific embodiment of the invention breach 40 is on the center of the film layer 300 tentatively patterned
Axis 41 is symmetrical, in such manner, it is possible to ensure that the black matrix of the patterning subsequently obtained is evenly distributed on underlay substrate.
In order to preferably prove the preliminary figure formed after developing in the specific embodiment of the invention to the film layer after exposure
The structure of the film layer of case, SEM (Scanning Electron are have taken to the film layer after development
Microscope, SEM) picture, as shown in figure 5, from the figure, it can be seen that the film layer of preliminary patterning formed after development with
The side of underlay substrate contact forms the breach concaved, and the width of the breach of formation is the preliminary figure formed above 1 μm, breach
The width of the film layer of case is 6 μm.
As shown in fig. 6, being toasted after then being carried out to underlay substrate under preset temperature, the film layer hair at breach top position
Life is collapsed so that the formation of the film layer 300 that tentatively patterns includes being located at the film layer 301 of the first thickness at collapse position and non-collapsed
The film layer 302 of the second thickness fallen at position.When it is implemented, the preset temperature in the specific embodiment of the invention arrives for 220 DEG C
230 DEG C, certainly, in actual production process, preset temperature can also be adjusted according to actual process condition.
Preferably, as shown in fig. 6, the film layer 301 of specific embodiment of the invention first thickness is on the film that tentatively patterns
The central axis 41 of layer is symmetrical, in such manner, it is possible to be further ensured that the black matrix of the patterning subsequently obtained is evenly distributed on
On underlay substrate.
In order to preferably prove to use the film layer tentatively patterned after baking after preset temperature in the specific embodiment of the invention
Structure, SEM pictures have taken to the film layer after the completion of rear baking, as shown in fig. 7, from the figure, it can be seen that rear baking is completed
The thickness value of the film layer of the first thickness formed afterwards is 1 μm, and the thickness value of the film layer of the second thickness of formation is 2 μm.
As shown in figure 8, finally removing the film layer of first thickness, the black matrix 11 patterned, to specific reality of the invention
The pattern for applying the black matrix 11 that example is obtained is measured and obtained, and the width of the pattern of black matrix 11 is 4 μm, is obtained with prior art
The width of pattern of black matrix compare for 6 μm, the specific embodiment of the invention, can in the case of using identical mask plate
Finer pattern is realized, resolution is improved, reduces production cost.
Preferably, the specific embodiment of the invention removes the film layer of first thickness by the method for ashing, by this method
When removing the film layer of first thickness, it can be good at ensureing the thickness value of the black matrix of the patterning subsequently obtained with being actually needed
Black matrix thickness value it is equal.
As shown in figure 9, the specific embodiment of the invention additionally provides a kind of patterning method of film layer, including：
S901, tunic layer is formed on underlay substrate, coat photoresist in the film layer, the photoresist is carried out
Exposure；
S902, the photoresist after exposure is developed, form the photoresist tentatively patterned；In developing process
Control development duration so that the photoresist tentatively patterned is in lacking that the side formation contacted with the film layer concaves
Mouthful；
S903, the underlay substrate to completion above-mentioned steps are toasted after being carried out under preset temperature, the breach top position
The photoresist at place is collapsed so that the photoresist formation tentatively patterned includes being located at the first thickness at collapse position
Photoresist and non-collapsed position at second thickness photoresist；
S904, the photoresist for removing first thickness, the photoresist patterned；
S905, the film layer not covered on underlay substrate by the photoresist of the patterning is performed etching, and removed
Remaining photoresist, the film layer patterned.
Illustrated below so that the film layer to forming pixel electrode is patterned as an example.
As shown in Figure 10, first, layer of transparent conductive layer 101, the specific embodiment of the invention are formed on underlay substrate 10
Transparency conducting layer by taking tin indium oxide (ITO) as an example, forming ITO specific method includes the method such as magnetron sputtering, evaporation coating,
Then photoresist 102 is coated on transparency conducting layer 101, and photoresist 102 is exposed, the specific embodiment of the invention is exposing
The mask plate that light time uses is identical with the mask plate of prior art, and the detailed process of exposure is also same as the prior art, here not
Repeat again.
As shown in figure 11, then the photoresist 102 after exposure is developed, forms the photoresist tentatively patterned
1020；The control development duration in developing process so that the photoresist 1020 tentatively patterned is contacted with transparency conducting layer 101
Side form the breach 110 that concaves.
When it is implemented, used in the specific embodiment of the invention in developing process development when a length of conventional development duration with
Delayed filling duration sum, development duration when conventional development duration develops with prior art is equal, delayed filling duration according to
Practical condition is configured, the specific embodiment of the invention when the photoresist after to exposure develops, development it is specific
Method is same as the prior art, the difference is that on the basis of prior art developing time, developing time has been carried out suitably
Extension.
Preferably, as shown in figure 11, specific embodiment of the invention breach 110 is on the photoresist 1020 that tentatively patterns
Central axis 111 is symmetrical, so ensure that the pixel electrode being subsequently formed is evenly distributed on underlay substrate.
As shown in figure 12, toasted after then being carried out to underlay substrate under preset temperature, the photoetching at breach top position
Glue is collapsed so that the formation of photoresist 1020 tentatively patterned includes being located at the photoresist of the first thickness at collapse position
1021 and non-collapsed position at second thickness photoresist 1022.In actual production process, in the specific embodiment of the invention
Preset temperature when toasting afterwards is configured according to actual process condition.
Preferably, as shown in figure 12, the photoresist 1021 of specific embodiment of the invention first thickness is on preliminary patterning
Photoresist central axis 111 it is symmetrical, in such manner, it is possible to be further ensured that the pixel electrode being subsequently formed is evenly distributed on
On underlay substrate.
As shown in figure 13, the photoresist of first thickness, the photoresist 1023 patterned are then removed；Afterwards to substrate
Substrate is performed etching, and removes the transparency conducting layer for the covering part of photoresist 1023 not being patterned, and removes remaining photoetching
Glue, the pixel electrode 1011 patterned on underlay substrate.The specific embodiment of the invention is and existing in patterning process
Technology is compared, and the area in the region of photoresist covering diminishes, and then can realize finer pattern, improves resolution.
At least one layer of film layer that the specific embodiment of the invention is additionally provided on a kind of preparation method of substrate, the substrate is used
The patterning method of above-mentioned film layer makes.
Specifically, the substrate in the specific embodiment of the invention is array base palte or color membrane substrates, and array base palte can be shape
Into Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-LCD)
Array base palte, or form active matrix organic light emitting diode display (Active Matrix Organic Light
Emitting Diode, AMOLED) array base palte.
The specific embodiment of the invention additionally provides a kind of substrate, and the substrate is made using the preparation method of substrate above.
During due to using draw above case method patterning, in the case where new mask plate need not be bought, it can realize more smart
Thin pattern, therefore, the resolution for making the substrate formed are higher, and can reduce production cost.
The specific embodiment of the invention additionally provides a kind of display device, and the display device includes above-mentioned substrate, the display
Device can be liquid crystal panel, liquid crystal display, LCD TV, Organic Light Emitting Diode (Organic Light Emitting
Diode, OLED) display device such as panel, OLED display, OLED TVs or Electronic Paper.
In summary, the specific embodiment of the invention provides a kind of patterning method of film layer, including：The shape on underlay substrate
Into tunic layer, film layer is exposed；Film layer after exposure is developed, the film layer tentatively patterned is formed；In development
During control development duration so that the film layer tentatively patterned forms what is concaved in the side that is contacted with underlay substrate
Breach；Toasted after being carried out to the underlay substrate for completing above-mentioned steps under preset temperature, the film layer at breach top position occurs
Collapse so that the film layer formation tentatively patterned includes being located at the film layer of the first thickness at collapse position and non-collapsed position
Put the film layer of the second thickness at place；Remove the film layer of first thickness, the film layer patterned.The specific embodiment of the invention is developed
The film layer tentatively patterned is formed afterwards, and the film layer tentatively patterned is in lacking that the side formation contacted with underlay substrate concaves
Mouthful, and after rear baking process, the film layer formation tentatively patterned include being located at the film layer of the first thickness at collapse position and
The film layer of second thickness at non-collapsed position, removes the film layer of first thickness afterwards, the film layer patterned, with existing skill
The patterning method of art film layer is compared, and can be realized finer pattern, be improved resolution；Further, since the present invention is specific
New mask plate need not be bought in the patterning process of the film layer of embodiment, therefore, it is possible to reduce production cost.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (8)
1. a kind of patterning method of film layer, it is characterised in that methods described includes：
Tunic layer is formed on underlay substrate, the film layer is exposed；
The film layer after exposure is developed, the film layer tentatively patterned is formed；The control development duration in developing process,
So that the film layer tentatively patterned forms the breach concaved in the side contacted with the underlay substrate；
Toasted after being carried out to the underlay substrate for completing above-mentioned steps under preset temperature, the film layer hair at the breach top position
Life is collapsed so that the film layer formation tentatively patterned includes being located at the film layer and non-collapsed of the first thickness at collapse position
The film layer of second thickness at position；
Remove the film layer of first thickness, the film layer patterned.
2. according to the method described in claim 1, it is characterised in that the breach is in the film layer tentatively patterned
Heart axisymmetrical is distributed.
3. method according to claim 2, it is characterised in that the film layer of the first thickness is on the preliminary patterning
Film layer central axis it is symmetrical.
4. a kind of patterning method of film layer, it is characterised in that methods described includes：
Tunic layer is formed on underlay substrate, photoresist is coated in the film layer, the photoresist is exposed；
The photoresist after exposure is developed, the photoresist tentatively patterned is formed；Development is controlled in developing process
Duration so that the photoresist tentatively patterned forms the breach concaved in the side contacted with the film layer；
Toasted after being carried out to the underlay substrate for completing above-mentioned steps under preset temperature, the photoresist at the breach top position
Collapse so that it is described tentatively pattern photoresist formation include be located at collapse position at first thickness photoresist and
The photoresist of second thickness at non-collapsed position；
Remove the photoresist of first thickness, the photoresist patterned；
The film layer not covered on underlay substrate by the photoresist of the patterning is performed etching, and removes remaining photoetching
Glue, the film layer patterned.
5. method according to claim 4, it is characterised in that the breach is on the photoresist tentatively patterned
Central axis is symmetrical.
6. method according to claim 5, it is characterised in that the photoresist of the first thickness is on the preliminary pattern
The central axis of the photoresist of change is symmetrical.
7. a kind of preparation method of substrate, it is characterised in that at least one layer of film layer on the substrate is appointed using claim 1-3
The patterning method of film layer described in one claim makes；Or,
At least one layer of film layer on the substrate uses the patterning method system of the film layer described in any claims of claim 4-6
Make.
8. preparation method according to claim 7, it is characterised in that the substrate is array base palte or color membrane substrates.
Priority Applications (1)
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| CN103941484A (en) * | 2014-04-30 | 2014-07-23 | 京东方科技集团股份有限公司 | Flexible liquid crystal display panel and manufacturing method thereof |
| CN103984202A (en) * | 2014-04-23 | 2014-08-13 | 京东方科技集团股份有限公司 | Masking plate and color film substrate manufacturing method |
| CN105070745A (en) * | 2015-09-17 | 2015-11-18 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method thereof, display device, and mask plate |
| CN105093652A (en) * | 2015-08-21 | 2015-11-25 | 京东方科技集团股份有限公司 | Substrate, manufacturing method of substrate, display panel and display device |
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| CN103984202A (en) * | 2014-04-23 | 2014-08-13 | 京东方科技集团股份有限公司 | Masking plate and color film substrate manufacturing method |
| CN103941484A (en) * | 2014-04-30 | 2014-07-23 | 京东方科技集团股份有限公司 | Flexible liquid crystal display panel and manufacturing method thereof |
| CN105093652A (en) * | 2015-08-21 | 2015-11-25 | 京东方科技集团股份有限公司 | Substrate, manufacturing method of substrate, display panel and display device |
| CN105070745A (en) * | 2015-09-17 | 2015-11-18 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method thereof, display device, and mask plate |
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